JPS6319858A - Bioelectric element circuit - Google Patents

Abstract

PURPOSE:To obtain the bioelectric element circuit in which superfine bioelectric elements are used by a method wherein a metal wiring pattern is formed on a bioelectric element layer using a mask which is formed by exposure of an energy beam. CONSTITUTION:An electrode 2 is formed into a desired pattern using a mask exposure-formed by an energy beam, an electrode 5 is formed on a flavodoxin film 3 in the same manner as above, the cytochrome c film, which is the second electron transferring protein having different redox potential, is deposited on the flavodoxin film 3, they are adhered to the electrode 5. The flavodoxin film 6, which is the third film, is laminated on and adhered to the cytochrome c film 4, and a parallel electrode 7 is formed on the flavodoxin film 6 in the same manner as above. A rectifying element is constituted by adhering the two molecules of the cytochrome c and the flavodoxin, and a transistor element of the three molecules the flavodoxin, cytochrome c and flavodoxin.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a bioelectric element circuit constructed using biomaterials, and particularly to metal wiring thereof.

[Conventional technology]

Conventionally, electric elements such as rectifier elements used in integrated circuits have had an MO3 structure as shown in FIG. In the figure, 11 is a p-type silicon substrate, 12 is an n-shade region, 13 is a p-shade region, 14 is an n-shade region, and 15 is an S 10
2y, 16.17 are electrodes, and these two electrodes i16
．． A pn junction (p shadow region 13-n shadow region 14 junction) is formed between the transistors 17 and 17, thereby realizing rectification characteristics.

[Problem that the invention seeks to solve]

Since the conventional MO3 structure rectifier is configured as described above, it can be microfabricated, and currently LSIs using rectifiers with the above structure or transistor elements with a similar structure are used in 256-bit LSIs. has been put into practical use.

Incidentally, in order to increase the memory capacity and operation speed of integrated circuits, it is essential to miniaturize the elements themselves, but St.
In devices using ultra-fine patterns of about 0.2 μm, the mean free path of electrons and the device size are almost equal,
This has the limitation that the independence of the elements cannot be maintained. In this way, silicon technology, which continues to develop day by day, is expected to eventually hit a wall in terms of miniaturization, and an electric concave path element based on a new principle has been developed to break the 0.2 μm barrier. There is a need for people who can do this.

In this situation, the inventors of the present invention used electron transfer proteins that exist in living organisms and transfer electrons through redox reactions, and took advantage of the difference in redox potential between different types of electron transfer fluorescent proteins. p using p and n type semiconductors
We have developed a rectifier element that exhibits rectifying characteristics similar to those of a -n junction transistor, and a transistor element that exhibits transistor characteristics similar to a pnp junction transistor. This allows the device size to be ultra-fine at the level of biomolecules, making it possible to increase the density and speed of circuits.

The inventors further developed resistors, capacitors, and other elements that are compatible with these elements in order to construct bioelectric element circuits using such elements, but the next question is how to perform wiring. became a problem.

The present invention has been made in view of the above situation, and an object of the present invention is to obtain a bioelectrical element circuit constructed by using various bioelectrical elements and wiring them.

[Means for solving problems]

A bioelectrical element circuit according to the first invention of the present application is configured to form a metal wiring pattern on a bioelectrical element layer using a mask formed by exposure with an energy beam.

Further, the bioelectrical element circuit according to the second invention of the present application is one in which wiring is formed by directly drawing metal on the bioelectrical element layer by a CVD method using a molecular beam, an ion beam, or a laser. It is.

[Effect]

In the first invention of the present application, a bioelectrical element circuit using ultrafine bioelectrical elements is obtained by forming a metal wiring pattern on a bioelectrical element layer using a mask formed by exposure with an energy beam. be able to.

Moreover, in the second invention of the present application, a molecular beam.

A bioelectric device circuit using ultrafine bioelectric devices can be obtained by directly drawing metal on the bioelectric device layer to form wiring using a CVD method using an ion beam or a laser.

〔Example〕

Next, an embodiment of the present invention will be described with reference to the drawings.

First, before explaining the bioelectric element circuit of the present invention, the rectifying element, switch element, resistance element, and capacitor element as the above-mentioned bioelectric elements will be explained.

That is, the rectifying element developed by the present inventors is shown in Fig. 4(a).
As shown in Figure 2, it is constructed by adhesively bonding two types of electron transport proteins having different redox (oxidation/reduction) potentials, ie, for example, cytochrome C molecule 1 and flavotoxin molecule 2. In this device, the redox potentials of cytochrome C1 and flavotoxin 2 are different as shown in Figure 4~), so electrons move from the negative level of the redox potential shown by the solid arrow in the figure to the positive level ( It exhibits a rectifying characteristic in which it flows easily in the forward direction (hereinafter referred to as the forward direction), but is difficult to flow in the reverse direction (in the direction of the dashed arrow in the figure). A rectifying element exhibiting rectifying characteristics similar to those of a junction diode can be obtained.

In the figure, reference numerals 4a and 4b are electrodes for applying a voltage ■ to the device when the device operates as a rectifying device.

Furthermore, as shown in FIG. 5, the switch element developed by the present inventors is a transistor made of a p-n-p junction semiconductor using two or more types of three electron transfer proteins 2a, 1, and 2b having different redox potentials. A transistor element exhibiting characteristics similar to those of the element is constructed. Furthermore, the fifth
In the figure, 4a.

4b and 4c are electrodes.

In addition, the resistance element developed by the present inventors may include, for example, a single electron transfer complex formed by adhesively bonding two types of electron transfer proteins used in the rectifying element, or a single electron transfer complex in which the electron transfer paths thereof are parallel to each other. There is a capacitor element in which a plurality of electron transfer complexes are arranged in parallel between a pair of electrodes, and for example, the above electron transfer complex is placed between a pair of electrodes and the electron transfer path is connected to the electrode. However, there are structures in which the electrodes are arranged in parallel, or in which a protein molecule without an electron transport function is arranged between a pair of electrodes.

Further, the actual configuration of the rectifying element is as shown in FIG.

That is, in FIG. 6, 76 is a substrate with insulating properties;
7 is a metal electrode such as Ag, Au, At, etc., and a plurality of strips are formed in parallel on the substrate 76.

78 is a LB (Langmuir-Bl) on the substrate 76.
79 is a second electron transfer protein membrane made of flavotoxin prepared by the same <LB method, etc.; 78 are cumulatively adhesively bonded. A plurality of parallel electrodes 801 and a plurality of parallel electrodes 1577 are formed in a direction perpendicular to each other, and are formed on the second electron transfer protein membrane 79 .

Further, the actual configuration of the switch element is as shown in FIG.

That is, in FIG. 7, 86 is a substrate with insulating properties;
7 is a metal electrode such as Ag, Au, A1, etc., and a plurality of strips are formed in parallel on the substrate 86.

On the 8th, a first electron transfer protein film made of flavotoxin is formed on the substrate 86 by the LB method or the like, and is formed on the plurality of electrodes 87. Reference numeral 90 denotes several parallel electrodes 90 formed perpendicularly to the plurality of parallel electrodes 87, which are formed on the first electron transfer protein membrane 88. 89 is a second electron transfer protein film made of cytochrome C prepared by the same <LB method, etc., which is cumulatively adhesively bonded to the first electron transfer protein film 88 and bonded to the electron F590. 91 is a third electron transfer protein membrane made of flavotoxin prepared by the same <LB method etc.;
It is cumulatively adhesively bonded to the electron transport protein membrane 89.

A plurality of parallel electrodes 92 are formed perpendicularly to the plurality of parallel electrodes 90, and are formed on the third electron transfer protein membrane 91.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows a bioelectric device circuit according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view thereof. In both figures, 1
2 is a substrate with insulating properties, and 2 is Ag.

The electrodes are made of metal such as Au or AI, and a plurality of strips are formed in parallel on the substrate 1. In the first invention of the present application, this electrode 2 is formed into a desired pattern using a mask formed by exposure with an energy beam, and in the second invention of the present application, this electrode 2 is formed using a molecular beam, an ion beam, or a laser. A desired wiring pattern is formed by directly drawing metal using the CVD method. 3 uses the LB method (Langmu) using flavotoxin, which is the first electron transfer protein.
The flavotoxin film 5 is a first film prepared by the ir-Blodgett method, and is a plurality of parallel electrodes formed perpendicularly to the plurality of parallel electrodes 2, which are formed on the flavotoxin film 3. The electrode 2 is formed in the same manner as the electrode 2 described above. Reference numeral 4 denotes a cytochrome C membrane prepared in the same manner as the flavotoxin membrane 3 using cytochrome C, which is a second electron transfer protein having a redox potential different from that of the flavotoxin; are cumulatively adhesively bonded to the electrode 5.
is joined to. A flavotoxin film 6 is a third film similarly prepared using flavotoxin, and is cumulatively adhesively bonded to the cytochrome C film 4. 7
is a plurality of parallel electrodes formed perpendicular to the plurality of parallel electrodes 5, and the electrodes 2. and 2. are formed on the flavotoxin film 6.
It is formed in the same manner as No. 5.

In the circuit shown in Figure 1 above, the one in which two molecules of cytochrome C and flavotoxin are glued together constitutes a rectifier, and the one in which three molecules of flavotoxin, cytochrome C, and flavotoxin are glued together is a transistor. The protein of each element contains one of the electrons i2,
5.7, and the anode and cathode of the rectifying element and the source, drain, and gate terminals of the transistor element are taken out.

As described above, in this embodiment, the metal wiring pattern is formed using the same method as in semiconductor integrated circuits, that is, using a mask exposed to energy beams, or directly drawing metal by CVD using molecular beams, ion beams, or lasers. By forming a metal wiring pattern and constructing a bioelectric device circuit using this method, it is possible to obtain an ultra-high-density, ultra-high-speed circuit whose size approaches the ultra-fine size at the molecular level.

In the above embodiment, each electrode is a plurality of parallel linear electrodes, but it goes without saying that the electrodes can have any shape.

Furthermore, in the above embodiments, an electron transfer protein is used as the material constituting the bioelectric device, but this may be an electron transfer substance made of a pseudo-biological material.

〔Effect of the invention〕

As described above, according to the present invention, a metal wiring pattern is formed on a bioelectrical device layer made of an electron transfer protein using a mask formed by exposure with an energy beam, or a metal wiring pattern is formed using a molecular beam, an ion beam, or a laser. Since the wiring is formed by directly drawing metal using the CVD method, it is possible to construct a circuit using bioelectrical elements and obtain an ultrafine circuit at the molecular level.

[Brief explanation of drawings]

1 and 2 are a sectional view and an exploded perspective view showing a bioelectric device circuit according to an embodiment of the present invention, and FIG. 3 is a conventional M
FIG. 4(a) is a diagram showing an example of a rectifying element with O3 configuration, and FIG. 4(b) is a schematic diagram showing a rectifying element developed by the present inventors.
1 is a redox potential state diagram, FIG. 5 is a schematic diagram showing a switching element developed by the present inventors, and FIG. 6 is a schematic cross-sectional configuration showing a device incorporating a rectifying element developed by the present inventors. 7 are schematic cross-sectional configuration diagrams showing a device incorporating a switch element developed by the present inventors. In the figure, 1 is the substrate, 2, 5.7 is a metal electrode, 3.6
is a flavotoxin membrane, and 4 is a cytochrome C membrane. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (2)

[Claims] (1) A circuit consisting of a bioelectrical element constructed using a biological material or a pseudo-biological material capable of electron transfer, in which a mask formed by exposure with an energy beam is formed on the bioelectrical element layer to achieve desired results. A bioelectrical element circuit characterized in that it is formed by forming a metal wiring pattern. (2) A circuit consisting of a bioelectrical element constructed using a biomaterial or a pseudo-biological material capable of electron transfer, which is formed using a CVD method using a molecular beam, an ion beam, or a laser on the bioelectrical element layer. A bioelectrical element circuit characterized in that a desired wiring pattern is formed by directly drawing metal.