JPS6318349B2 - - Google Patents
Info
- Publication number
- JPS6318349B2 JPS6318349B2 JP54098006A JP9800679A JPS6318349B2 JP S6318349 B2 JPS6318349 B2 JP S6318349B2 JP 54098006 A JP54098006 A JP 54098006A JP 9800679 A JP9800679 A JP 9800679A JP S6318349 B2 JPS6318349 B2 JP S6318349B2
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- electrode
- substrate
- conductive layer
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 本発明は太陽電池に関する。[Detailed description of the invention] The present invention relates to solar cells.
第１図は従来の太陽電池の構造を示し、１はガ
ラス等からなる透光性絶縁基板、２，２………は
該基板上に近接して被着形成された透明な第１電
極で、該電極は酸素を含む材料、例えば酸化イン
ジウム一酸化スズからなり、電子ビーム蒸着法や
スパツタ蒸着法により被着される。３，３………
は第１電極２，２，………の上に被着形成された
光発電層で、例えばグロー放電により堆積形成さ
れ内部にPN接合を有する非晶質シリコンで構成
され得る。４，４，………は光発電層３，３，…
……の上に被着形成され上記第１電極２と対向す
る酸化性第２電極で例えばアルミニウムからな
る。５及び６は夫々第１及び第１電極２，４の延
長部にして、これらは隣り合う第１、第２電極を
直列関係で接続するべく重畳配設されている。 Figure 1 shows the structure of a conventional solar cell, where 1 is a transparent insulating substrate made of glass or the like, and 2, 2... are transparent first electrodes formed close to the substrate. , the electrode is made of an oxygen-containing material, for example indium oxide or tin monoxide, and is deposited by electron beam evaporation or sputter evaporation. 3,3……
is a photovoltaic layer deposited on the first electrodes 2, 2, . 4, 4, ...... are photovoltaic layers 3, 3, ...
An oxidizing second electrode formed on the substrate and facing the first electrode 2, made of, for example, aluminum. 5 and 6 are extensions of the first and first electrodes 2 and 4, respectively, and these are arranged in an overlapping manner to connect the adjacent first and second electrodes in series.
上記装置において、基板１側より光入射がある
と、その光は基板１、第１電極２を順に透過した
後光発電層３に入り、該層内のPN接合附近に電
子−正孔対を発生させて対向する第１、第２電極
２，４間に起電圧を生じせしめる。斯る起電圧は
各発電層３毎に発生するが、上記の如き直列接続
関係により相加され全体として大きな値となる。 In the above device, when light is incident from the substrate 1 side, the light passes through the substrate 1 and the first electrode 2 in order, enters the photovoltaic layer 3, and generates electron-hole pairs near the PN junction in the layer. This generates an electromotive voltage between the opposing first and second electrodes 2 and 4. Although such an electromotive voltage is generated in each power generation layer 3, it is added due to the series connection relationship as described above, and becomes a large value as a whole.
然るに上記装置にあつては、時間経過と共に特
性が劣化する現象が認められ、その原因は上記直
列接続部にあることが判明した。即ち、斯る接続
部にあつては、第１、第２電極の各延長部５，６
が接触しており、その１方には酸素が含まれてお
り、他方は酸化性であるため第１電極延長部５内
の酸素が第２電極側延長部６内に拡散してゆき該
延長部が酸化されこのために、直列接続部の抵抗
値が時間経過と共に増大し、起電力低下等をもた
らすのである。 However, in the above device, a phenomenon was observed in which the characteristics deteriorated over time, and it was found that the cause of this deterioration was the above-mentioned series connection. That is, in the case of such a connection part, each extension part 5, 6 of the first and second electrodes
are in contact with each other, one of them contains oxygen and the other is oxidizing, so the oxygen in the first electrode extension 5 diffuses into the second electrode extension 6 and the extension As a result, the resistance value of the series connection increases over time, resulting in a decrease in electromotive force.
本発明は上記点に鑑みてなされたもので、その
特徴とするところは、第２図の実施例に示す如
く、隣り合う第１、第２電極２，４の接続部、即
ち各延長部５，６間に酸素に対し難反応性の導電
層７、例えば金、銀、白金等からなる層を介在さ
せたことにある。尚、第２図において、その他の
部分は第１図と同様であり同一番号が附されてい
る。 The present invention has been made in view of the above points, and is characterized by the connecting portions of the adjacent first and second electrodes 2 and 4, that is, each extension portion 5, as shown in the embodiment of FIG. , 6 is interposed with a conductive layer 7 that is hardly reactive to oxygen, such as a layer made of gold, silver, platinum, etc. In FIG. 2, other parts are similar to those in FIG. 1 and are given the same numbers.
例えば上記難反応性の導電層７は真空度10-5〜
10-6Torr、基板温度120℃、ビーム電流２ｍＡの
条件による電子ビーム蒸着を約10分間施すことに
よつて得られた膜厚1500Å〜3000Åの金から成
る。 For example, the above-mentioned non-reactive conductive layer 7 has a vacuum degree of 10 -5 ~
It consists of gold having a thickness of 1500 Å to 3000 Å obtained by performing electron beam evaporation for about 10 minutes under the conditions of 10 -6 Torr, substrate temperature of 120° C., and beam current of 2 mA.
次いで、上記膜厚約3000Åの金の導電層７を介
在せしめた本発明装置と、上記金の導電層７を除
いて同一構造の従来装置と、を比較するために90
℃、2000時間に及ぶ高温放置試験を施し光電交換
効率の変化を測定したところ、本発明装置にあつ
ては試験経過後も光電変換効率は初期値のままで
あつたのに対し、従来装置にあつては33％光電変
換効率の低下が確認された。 Next, in order to compare the device of the present invention in which the gold conductive layer 7 with a film thickness of about 3000 Å is interposed, and the conventional device having the same structure except for the gold conductive layer 7,
℃ for 2,000 hours and measured the change in photoelectric conversion efficiency.The photoelectric conversion efficiency of the device of the present invention remained at its initial value even after the test, while that of the conventional device In one case, a 33% decrease in photoelectric conversion efficiency was confirmed.
尚、斯る測定には第１電極２としては膜厚約
700Åの酸化インジウム−酸化スズが用いられ、
第２電極４として膜厚約5000Åのアルミニウムが
共通に供せられた。 In addition, for such measurements, the first electrode 2 should have a film thickness of approximately
700Å indium oxide-tin oxide is used,
Aluminum with a thickness of about 5000 Å was commonly provided as the second electrode 4.
従つて本発明によれば導電層７の存在により延
長部６が酸化されるといつたことがなく、上記直
列接続部の接続状態は良好に保たれ、太陽電池の
寿命や信頼性を向上することができる。 Therefore, according to the present invention, the extension part 6 is not oxidized due to the presence of the conductive layer 7, and the connection state of the series connection part is maintained well, improving the life span and reliability of the solar cell. be able to.
第１図Ａは従来例を示す平面図、第１図Ｂは同
Ｂ−B′断面図、第２図Ａは本発明実施例を示す
平面図、第２図Ｂは同Ｂ−B′断面図である。
１……基板、２……第１電極、３……光発電
層、４……第２電極、７……導電層。
Fig. 1A is a plan view showing a conventional example, Fig. 1B is a sectional view taken along the line BB', Fig. 2A is a plan view showing an embodiment of the present invention, and Fig. 2B is a sectional view taken along the line BB'. It is a diagram. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First electrode, 3... Photovoltaic layer, 4... Second electrode, 7... Conductive layer.
Claims (1)
成され、酸素を含む複数の透明な第１電極、該電
極の各々の上に被着形成された光発電層、該層上
に被着形成され上記各透明電極に対向する酸化性
第２電極を備え、隣り合う上記第１及び第２電極
を直列関係で接続してなる太陽電池において、上
記第１及び第２電極を酸素に対し難反応性の導電
層を介して電気的に接続せしめたことを特徴とす
る太陽電池。1. A light-transmitting insulating substrate, a plurality of transparent first electrodes containing oxygen and deposited in close proximity to the substrate, a photovoltaic layer deposited on each of the electrodes, and a photovoltaic layer deposited on each of the electrodes; In a solar cell comprising an oxidizing second electrode formed by adhesion and facing each of the transparent electrodes, and in which adjacent first and second electrodes are connected in series, the first and second electrodes are exposed to oxygen. A solar cell characterized in that it is electrically connected via a conductive layer that is difficult to react to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9800679A JPS5623785A (en) | 1979-07-31 | 1979-07-31 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9800679A JPS5623785A (en) | 1979-07-31 | 1979-07-31 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5623785A JPS5623785A (en) | 1981-03-06 |
| JPS6318349B2 true JPS6318349B2 (en) | 1988-04-18 |
Family
ID=14207626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9800679A Granted JPS5623785A (en) | 1979-07-31 | 1979-07-31 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5623785A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220106432A (en) * | 2021-01-22 | 2022-07-29 | 한화솔루션 주식회사 | Environmental-friendly plasticizer composition, and selant/adhesive compositions comprising the same |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS629749Y2 (en) * | 1981-04-01 | 1987-03-06 | ||
| JPS59198775A (en) * | 1983-04-26 | 1984-11-10 | Fuji Electric Co Ltd | solar cells |
| JPS60113975A (en) * | 1983-11-25 | 1985-06-20 | Matsushita Electric Ind Co Ltd | Thin film photovoltaic device |
| JPH0620153B2 (en) * | 1987-12-25 | 1994-03-16 | 鐘淵化学工業株式会社 | Photovoltaic element |
| KR100416139B1 (en) * | 2001-04-04 | 2004-01-31 | 삼성에스디아이 주식회사 | Solar battery module |
-
1979
- 1979-07-31 JP JP9800679A patent/JPS5623785A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220106432A (en) * | 2021-01-22 | 2022-07-29 | 한화솔루션 주식회사 | Environmental-friendly plasticizer composition, and selant/adhesive compositions comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5623785A (en) | 1981-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5248345A (en) | Integrated photovoltaic device | |
| US4281208A (en) | Photovoltaic device and method of manufacturing thereof | |
| US4593151A (en) | Photoelectric conversion device | |
| US4315097A (en) | Back contacted MIS photovoltaic cell | |
| SU1093265A3 (en) | Photovoltaic cell | |
| JPS6318349B2 (en) | ||
| JPS6161270B2 (en) | ||
| US3982260A (en) | Light sensitive electronic devices | |
| JPS61159771A (en) | photovoltaic device | |
| JP3687236B2 (en) | Thin film photoelectric conversion element | |
| JPS59124175A (en) | Photovoltaic device | |
| JPS60258975A (en) | photovoltaic device | |
| JP2936269B2 (en) | Amorphous solar cell | |
| JPH0125234B2 (en) | ||
| JPH0434832B2 (en) | ||
| JPH0244523Y2 (en) | ||
| JPS5912030B2 (en) | Semiconductor photoelectric conversion device | |
| JPH01206671A (en) | Solar cell | |
| JP2975751B2 (en) | Photovoltaic device | |
| JPS5975679A (en) | Photoelectromotive force generating device | |
| JPS6242465A (en) | Photoelectric conversion device | |
| JPS6095980A (en) | Photoelectric conversion device | |
| JPH03132080A (en) | Photovoltaic device | |
| JPH02148773A (en) | light sensor | |
| JP2819538B2 (en) | Method for manufacturing photovoltaic device |