JPS63175854A - Image producing method - Google Patents
Image producing methodInfo
- Publication number
- JPS63175854A JPS63175854A JP707787A JP707787A JPS63175854A JP S63175854 A JPS63175854 A JP S63175854A JP 707787 A JP707787 A JP 707787A JP 707787 A JP707787 A JP 707787A JP S63175854 A JPS63175854 A JP S63175854A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive
- polyimide precursor
- acid
- group
- anhydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000003999 initiator Substances 0.000 claims abstract description 10
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 125000005375 organosiloxane group Chemical group 0.000 claims abstract description 4
- 239000011342 resin composition Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 15
- 125000001931 aliphatic group Chemical group 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 abstract description 39
- 239000004642 Polyimide Substances 0.000 abstract description 38
- 239000002243 precursor Substances 0.000 abstract description 30
- 150000008064 anhydrides Chemical class 0.000 abstract description 25
- -1 alicyclic tetracarboxylic acid Chemical class 0.000 abstract description 21
- 239000011347 resin Substances 0.000 abstract description 15
- 229920005989 resin Polymers 0.000 abstract description 15
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 abstract description 2
- 150000004985 diamines Chemical class 0.000 abstract description 2
- MIVZUXGHPJSKRI-UHFFFAOYSA-N pentane-1,1,1,2-tetracarboxylic acid Chemical compound CCCC(C(O)=O)C(C(O)=O)(C(O)=O)C(O)=O MIVZUXGHPJSKRI-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007858 starting material Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 17
- 239000003960 organic solvent Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 5
- 239000012965 benzophenone Substances 0.000 description 5
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 5
- 239000002798 polar solvent Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000002411 thermogravimetry Methods 0.000 description 5
- 230000004580 weight loss Effects 0.000 description 5
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229920005601 base polymer Polymers 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- RBGUKBSLNOTVCD-UHFFFAOYSA-N 1-methylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C RBGUKBSLNOTVCD-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- STZIXLPVKZUAMV-UHFFFAOYSA-N cyclopentane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1(C(O)=O)C(O)=O STZIXLPVKZUAMV-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012719 thermal polymerization Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 230000002087 whitening effect Effects 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- VDYWHVQKENANGY-UHFFFAOYSA-N 1,3-Butyleneglycol dimethacrylate Chemical compound CC(=C)C(=O)OC(C)CCOC(=O)C(C)=C VDYWHVQKENANGY-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- KJDRSWPQXHESDQ-UHFFFAOYSA-N 1,4-dichlorobutane Chemical compound ClCCCCCl KJDRSWPQXHESDQ-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- FYBFGAFWCBMEDG-UHFFFAOYSA-N 1-[3,5-di(prop-2-enoyl)-1,3,5-triazinan-1-yl]prop-2-en-1-one Chemical compound C=CC(=O)N1CN(C(=O)C=C)CN(C(=O)C=C)C1 FYBFGAFWCBMEDG-UHFFFAOYSA-N 0.000 description 1
- GGJWFGAKNZHSIB-UHFFFAOYSA-N 1-butylcyclohexa-2,4-dien-1-ol Chemical compound CCCCC1(O)CC=CC=C1 GGJWFGAKNZHSIB-UHFFFAOYSA-N 0.000 description 1
- YAOJJEJGPZRYJF-UHFFFAOYSA-N 1-ethenoxyhexane Chemical compound CCCCCCOC=C YAOJJEJGPZRYJF-UHFFFAOYSA-N 0.000 description 1
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- JRHNUZCXXOTJCA-UHFFFAOYSA-N 1-fluoropropane Chemical compound CCCF JRHNUZCXXOTJCA-UHFFFAOYSA-N 0.000 description 1
- FCBZNZYQLJTCKR-UHFFFAOYSA-N 1-prop-2-enoxyethanol Chemical compound CC(O)OCC=C FCBZNZYQLJTCKR-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- HGOUNPXIJSDIKV-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)butyl 2-methylprop-2-enoate Chemical compound CCC(CO)(CO)COC(=O)C(C)=C HGOUNPXIJSDIKV-UHFFFAOYSA-N 0.000 description 1
- SYENVBKSVVOOPS-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)butyl prop-2-enoate Chemical compound CCC(CO)(CO)COC(=O)C=C SYENVBKSVVOOPS-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- DZZAHLOABNWIFA-UHFFFAOYSA-N 2-butoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCCCC)C(=O)C1=CC=CC=C1 DZZAHLOABNWIFA-UHFFFAOYSA-N 0.000 description 1
- DJKKWVGWYCKUFC-UHFFFAOYSA-N 2-butoxyethyl 2-methylprop-2-enoate Chemical compound CCCCOCCOC(=O)C(C)=C DJKKWVGWYCKUFC-UHFFFAOYSA-N 0.000 description 1
- PTJDGKYFJYEAOK-UHFFFAOYSA-N 2-butoxyethyl prop-2-enoate Chemical compound CCCCOCCOC(=O)C=C PTJDGKYFJYEAOK-UHFFFAOYSA-N 0.000 description 1
- DRHLPIHNSBNMFF-UHFFFAOYSA-N 2-cyclopentylpropanedioic acid Chemical compound OC(=O)C(C(O)=O)C1CCCC1 DRHLPIHNSBNMFF-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SFPNZPQIIAJXGL-UHFFFAOYSA-N 2-ethoxyethyl 2-methylprop-2-enoate Chemical compound CCOCCOC(=O)C(C)=C SFPNZPQIIAJXGL-UHFFFAOYSA-N 0.000 description 1
- FWWXYLGCHHIKNY-UHFFFAOYSA-N 2-ethoxyethyl prop-2-enoate Chemical compound CCOCCOC(=O)C=C FWWXYLGCHHIKNY-UHFFFAOYSA-N 0.000 description 1
- VZMLJEYQUZKERO-UHFFFAOYSA-N 2-hydroxy-1-(2-methylphenyl)-2-phenylethanone Chemical compound CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 VZMLJEYQUZKERO-UHFFFAOYSA-N 0.000 description 1
- IEVADDDOVGMCSI-UHFFFAOYSA-N 2-hydroxybutyl 2-methylprop-2-enoate Chemical compound CCC(O)COC(=O)C(C)=C IEVADDDOVGMCSI-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- YXYJVFYWCLAXHO-UHFFFAOYSA-N 2-methoxyethyl 2-methylprop-2-enoate Chemical compound COCCOC(=O)C(C)=C YXYJVFYWCLAXHO-UHFFFAOYSA-N 0.000 description 1
- HFCUBKYHMMPGBY-UHFFFAOYSA-N 2-methoxyethyl prop-2-enoate Chemical compound COCCOC(=O)C=C HFCUBKYHMMPGBY-UHFFFAOYSA-N 0.000 description 1
- IXPWKHNDQICVPZ-UHFFFAOYSA-N 2-methylhex-1-en-3-yne Chemical compound CCC#CC(C)=C IXPWKHNDQICVPZ-UHFFFAOYSA-N 0.000 description 1
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- IKEHOXWJQXIQAG-UHFFFAOYSA-N 2-tert-butyl-4-methylphenol Chemical compound CC1=CC=C(O)C(C(C)(C)C)=C1 IKEHOXWJQXIQAG-UHFFFAOYSA-N 0.000 description 1
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- BJOWTLCTYPKRRU-UHFFFAOYSA-N 3-ethenoxyoctane Chemical compound CCCCCC(CC)OC=C BJOWTLCTYPKRRU-UHFFFAOYSA-N 0.000 description 1
- XHULUQRDNLRXPF-UHFFFAOYSA-N 3-ethenyl-1,3-oxazolidin-2-id-4-one Chemical compound C(=C)N1[CH-]OCC1=O XHULUQRDNLRXPF-UHFFFAOYSA-N 0.000 description 1
- GNSFRPWPOGYVLO-UHFFFAOYSA-N 3-hydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCO GNSFRPWPOGYVLO-UHFFFAOYSA-N 0.000 description 1
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- 235000011008 sodium phosphates Nutrition 0.000 description 1
- 229940048086 sodium pyrophosphate Drugs 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 235000019794 sodium silicate Nutrition 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 235000019818 tetrasodium diphosphate Nutrition 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、耐熱性に優れ厚膜なll1Ii像の製造法に
関し、詳しくは、PIられる塗膜が耐熱性、電気的及び
機械的性質に優れ、半導体工業における固体素子への絶
縁膜、パンシベーション膜の形成材料。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for producing a thick ll1Ii image with excellent heat resistance. Excellent material for forming insulating films and pansivation films for solid-state devices in the semiconductor industry.
半導体の集積回路、多層プリント配線板等の層間絶縁材
料などとして好適な感光性樹脂組成物を用いた画像の″
#造法に関する。Image production using a photosensitive resin composition suitable as an interlayer insulation material for semiconductor integrated circuits, multilayer printed wiring boards, etc.
#Relating to construction methods.
(従来の技術〉
近年、半導体工業においては、従来の無機材料を用いて
行なわれていた層間絶縁に、有機物が。(Prior Art) In recent years, in the semiconductor industry, organic materials have been used for interlayer insulation, which was previously performed using inorganic materials.
その特性を活かして使用されており、主としてポリイミ
ド樹脂等の耐熱性に優れている材料が用いられている。It is used to take advantage of its characteristics, and materials with excellent heat resistance, such as polyimide resin, are mainly used.
しかしながら、パターン形成上煩雑な工程を必要とする
ことから露光、現像によってパターン形成後もこれをそ
のまま残し絶縁材料として用いることができる耐熱感光
材料の出現が望まれている。However, since pattern formation requires a complicated process, there is a desire for a heat-resistant photosensitive material that can be used as an insulating material by leaving the pattern intact after exposure and development.
これらの材料として2例えは感光性ポリイミド。Two examples of these materials are photosensitive polyimide.
環化ポリフリジエンをペースポリマとした耐熱感光材料
等が提案されておシ2%に感光性ポリイミドはその耐熱
性の優秀さや不純物排除の容易さ等から特に注目されて
いる。Heat-resistant photosensitive materials using cyclized polyfridiene as a pace polymer have been proposed, and 2% photosensitive polyimide is attracting particular attention because of its excellent heat resistance and ease of removing impurities.
感光性ポリイミドとしては、ポリイミド前駆体と重クロ
ム酸塩からなる系が最初に提案されたが(特公昭49−
17374号公報)、この材料は実用的な光感度を有し
、膜形成能が高い等の長所を有する反面、保存安定性に
欠けまたポリイミド中にクロムイオンが残存するなどの
欠点があり。As a photosensitive polyimide, a system consisting of a polyimide precursor and a dichromate was first proposed (Japanese Patent Publication No. 49-1989).
Although this material has advantages such as practical photosensitivity and high film-forming ability, it has disadvantages such as poor storage stability and residual chromium ions in the polyimide.
実用には至らなかった。また他の例として、ポリイミド
前駆体に感光基をエステル結合で導入した感光性ポリイ
ミド前駆体が提案されているが(特公昭55−3020
7号公報)、感光基を導入する際に脱塩酸反応を含むた
めに最終的に塩化物が残り、この除去が問題となってい
る。It was not put into practical use. As another example, a photosensitive polyimide precursor has been proposed in which a photosensitive group is introduced into the polyimide precursor through an ester bond (Japanese Patent Publication No. 55-3020
No. 7), since a dehydrochloric acid reaction is involved when introducing a photosensitive group, chloride remains in the end, and its removal poses a problem.
このような問題を回避するために、ポリイミド前駆体に
感光基を有する化合物を混合する方法(特開昭54−1
09828号公報)やポリイミド前駆体中の官能基と感
光基を有する化合物の官能基とを反応させて感光基を導
入する方法も開発されている(特開昭56−24343
号公報、特開昭60−100143号公報)。In order to avoid such problems, a method of mixing a compound having a photosensitive group with a polyimide precursor (Japanese Patent Laid-Open No. 54-1
09828) and a method of introducing a photosensitive group by reacting a functional group in a polyimide precursor with a functional group of a compound having a photosensitive group has also been developed (Japanese Patent Laid-Open No. 56-24343).
(Japanese Unexamined Patent Publication No. 1988-100143).
しかしながら、これらの感光性ポリイミドは。However, these photosensitive polyimides.
その耐熱性重視の観点から芳香族ポリイミド前駆体がベ
ースポリマとして用いられている。こうした芳香族ポリ
イミド前駆体は、溶解性に本質的な問題があり、さらに
紫外領域での光透過率が低く厚膜を形成するのが困難で
ある。こうして厚膜形成が困難なために絶縁材料として
用いる場合には回路の平坦化や低誘電率化に問題を残し
ており。An aromatic polyimide precursor is used as a base polymer from the viewpoint of its heat resistance. Such aromatic polyimide precursors have an essential problem in solubility and further have low light transmittance in the ultraviolet region, making it difficult to form a thick film. Because it is difficult to form a thick film, problems remain in flattening the circuit and lowering the dielectric constant when used as an insulating material.
その改善が望まれている。例えば感光性ポリイミドとし
て芳香族ポリイミド前駆体と感光基を有する化合物とを
溶解した場合に、この溶液から塗膜を形成する乾燥工程
においては大部分の良溶媒が揮発し、乾燥後の塗膜は、
芳香族ポリイミド前駆体と感光基を有する化合物から構
成されることになる。このような感光基を有する化合物
は、一般に芳香族ポリイミド前駆体に対しては貧溶媒で
あるため、芳香族ポリイミド前駆体は不溶化し白化現象
を塗膜に発生させ、こうした溶解性の問題から、露光工
程に供することが困難となる。Improvement is desired. For example, when an aromatic polyimide precursor and a compound having a photosensitive group are dissolved to form a photosensitive polyimide, most of the good solvent evaporates during the drying process to form a coating film from this solution, and the coating film after drying is ,
It is composed of an aromatic polyimide precursor and a compound having a photosensitive group. Compounds having such photosensitive groups are generally poor solvents for aromatic polyimide precursors, so the aromatic polyimide precursor becomes insolubilized and causes a whitening phenomenon in the coating film. It becomes difficult to subject the film to the exposure process.
また、感光性ポリイミドを含めた大部分の感光性樹脂は
、共存させた光重合開始剤に吸収された光エネルギーが
反応の引きがねとなり9分子内または分子間に化学的又
は構造的変化を生ずることに上り像形成を行なうもので
あり、現行の大部分の光重合開始剤は吸収波長が紫外領
域であるため。In addition, in most photosensitive resins, including photosensitive polyimides, the light energy absorbed by the coexisting photopolymerization initiator triggers the reaction, causing chemical or structural changes within or between molecules. This is because most of the current photopolymerization initiators have absorption wavelengths in the ultraviolet region.
この領域での光透過率の小さい芳香族ポリイミド前駆体
を用いたベースポリマでは厚膜形成が姥しくなる。この
ため、芳香族ポリイミド前駆体をベースポリマに用いた
感光性ポリイミドでは、白化現象及び光透過性の悪さか
ら、膜厚が限定されてしまい厚膜なパターンを形成する
ことは甚だしく困難である。With a base polymer using an aromatic polyimide precursor having low light transmittance in this region, it is difficult to form a thick film. For this reason, with photosensitive polyimide using an aromatic polyimide precursor as a base polymer, the film thickness is limited due to the whitening phenomenon and poor light transmittance, making it extremely difficult to form a thick film pattern.
また、こうした溶解性及び光透過性を改善するため脂肪
族ポリイミド前駆体を用いる方法(特開昭59−154
49号公報、特開昭59−100135号公報)や脂肪
族ポリイミド前駆体く重合性不飽和結合を有するエポキ
シ化合物を付加せしめる方法(特開昭59−13192
7号公報)が提案されているが、これらの方法において
は現像の際に有機浴剤を用いるために、現像時に作業者
が溶剤の蒸気を吸入しfcシ1作業場に臭気がたちこむ
等作業環境を悪くシ、さらに可燃性溶剤の場合には引火
の危険があり、また現像廃液が高濃度の有機物を含む場
合にはその処理装置を必要とする等の問題点がある。In addition, a method using an aliphatic polyimide precursor to improve solubility and light transmittance (Japanese Unexamined Patent Publication No. 59-154
49, JP-A-59-100135) and a method of adding an epoxy compound having a polymerizable unsaturated bond to an aliphatic polyimide precursor (JP-A-59-13192).
However, since these methods use an organic bath agent during development, workers may inhale solvent vapor during development, causing odors to build up in the work area. There are problems in that it is harmful to the environment, there is a risk of ignition if a flammable solvent is used, and a treatment device is required if the developer waste solution contains a high concentration of organic matter.
(発明が解決しようとする問題点)
本発明は、上記に示した従来技術の問題点を解決し、l
1lit熱性に優れ厚膜な画像の製法を提供するもので
ある。(Problems to be Solved by the Invention) The present invention solves the problems of the prior art shown above, and
This provides a method for producing a thick film image with excellent 1 liter heat resistance.
(問題点を解決するための手段)
本発明は、(1) 基材上に2式(1)(式中、 r
ttは4価の脂肪族基または脂環式基であり、几2は2
価の芳香族基、脂肪族基、脂環式基あるいはオルガノシ
ロキサン基である。)で表わされる繰返し単位を有する
ポリイミド前躯体1重合性不飽和化合物、光重合開始剤
および有機溶媒を含有する感光性樹脂組成物より感光層
を形成する工程。(Means for Solving the Problems) The present invention provides (1) two formulas (1) (wherein r
tt is a tetravalent aliphatic group or alicyclic group, and 几2 is 2
These are aromatic groups, aliphatic groups, alicyclic groups, or organosiloxane groups. ) A step of forming a photosensitive layer from a photosensitive resin composition containing a polyimide precursor 1 polymerizable unsaturated compound, a photopolymerization initiator, and an organic solvent.
(2)感光層を活性光でイメージ的に露光する工程
および
(3)アルカリ水溶液で現像する工程を含む画像の製法
に関する。The present invention relates to a method for producing an image, which includes (2) imagewise exposing a photosensitive layer to actinic light and (3) developing with an alkaline aqueous solution.
本発明における上記の式(1)で表わされる繰返し単位
を有するポリイミド前駆体は既に公知の化合物であり、
脂肪族または脂環式テトラカルボン酸又はその無水物と
ジアミン化合物とを出発原料として容易に得られる。The polyimide precursor having a repeating unit represented by the above formula (1) in the present invention is already a known compound,
It can be easily obtained using an aliphatic or alicyclic tetracarboxylic acid or its anhydride and a diamine compound as starting materials.
脂肪族または脂環式テトラカルボン酸又はその無水物と
しては、ブタンテトラカルボン酸、ペンタンテトラカル
ボン酸、ヘキサンテトラカルボン酸、シクロペンタンテ
トラカルボン酸、ビシクロヘキセンテトラカルボン酸、
シクロプロパンテトラカルボン酸、シクロブタンテトラ
カルボン酸。Aliphatic or alicyclic tetracarboxylic acids or anhydrides thereof include butanetetracarboxylic acid, pentanetetracarboxylic acid, hexanetetracarboxylic acid, cyclopentanetetracarboxylic acid, bicyclohexenetetracarboxylic acid,
Cyclopropane tetracarboxylic acid, cyclobutane tetracarboxylic acid.
シクロペンタンテトラカルボン酸、シクロヘキサンテト
ラカルボン酸、メチル−シクロヘキセンテトラカルボン
酸、エチレンテトラカルボン酸等のテトラカルボ/酸又
はその無水物、2,3.5−)’Jカルボキシーシクロ
ペンチル酢酸又はその無水物。Tetracarbo/acids such as cyclopentanetetracarboxylic acid, cyclohexanetetracarboxylic acid, methyl-cyclohexenetetracarboxylic acid, ethylenetetracarboxylic acid or anhydride thereof, 2,3.5-)'J carboxycyclopentyl acetic acid or anhydride thereof.
ビシクロ−(ス2.2)−オクト−7エンー2.35゜
6−テトラカルボン酸又はその無水物、テトラヒドロフ
ラン−2,3,4,5−テトラカルボン酸又はその無水
物、5−(2,5−ジオキソテトラヒドロフリル)−3
−メチル−3−シクロヘキセン−1,2−ジカルボン酸
又はその無水物、3,5.6−ドリカルボキシー2−カ
ルボキシメチルノルボルナン−2:3.5:6又はその
無水物、5.5’−チオビス(ノルポナンー2.3−ジ
カルボン酸)又はその無水物、5.5’−メチレンジチ
オビス(ノルボテ/−43−ジカルボン酸)又はその無
水物、j5′−エチレンジチオビス(ノルボナンー2.
3−ジカルボン酸)又はその無水物、5.5’−プロピ
レンジチオビス(ノルボナンー2.3−ジカルボン酸)
又はその無水物、 s、s’−スルホニルビス(ノルボ
ナンース3−ジカルボン酸)又はその無水物、5.5’
−メチレンジスルホニルビス(ノルポナンー2.3−ジ
カルボン酸)又はその無水物、5.5’−エチレンジス
ルホニルビス(ノルボナンー2.3−ジカルボン酸)又
はその無水物、5.5’−プロピレンジスルホニルビス
(ノルボナンース3−ジカルボン酸)又はその無水物等
が挙げられる。勿論これらのテトラカルボン酸又はその
無水物の骨格がアルキル基等の置換基で置換されてもよ
い。これらのテトラカルボン酸又はその無水物は単独で
も、2種類以上を組み合わせても使用することができる
。Bicyclo-(2.2)-oct-7ene-2.35°6-tetracarboxylic acid or its anhydride, Tetrahydrofuran-2,3,4,5-tetracarboxylic acid or its anhydride, 5-(2, 5-dioxotetrahydrofuryl)-3
-Methyl-3-cyclohexene-1,2-dicarboxylic acid or its anhydride, 3,5,6-dolycarboxy-2-carboxymethylnorbornane-2:3.5:6 or its anhydride, 5.5'- Thiobis(norponane-2,3-dicarboxylic acid) or its anhydride, 5,5'-methylenedithiobis(norbote/-43-dicarboxylic acid) or its anhydride, j5'-ethylenedithiobis(norponane-2.
3-dicarboxylic acid) or its anhydride, 5,5'-propylenedithiobis(norbonane-2,3-dicarboxylic acid)
or its anhydride, s,s'-sulfonylbis(norbonanth-3-dicarboxylic acid) or its anhydride, 5.5'
-methylenedisulfonylbis(norponane-2,3-dicarboxylic acid) or its anhydride, 5,5'-ethylenedisulfonylbis(norponane-2,3-dicarboxylic acid) or its anhydride, 5,5'-propylenedisulfonyl Examples include bis(norbonanth-3-dicarboxylic acid) or anhydride thereof. Of course, the skeleton of these tetracarboxylic acids or their anhydrides may be substituted with a substituent such as an alkyl group. These tetracarboxylic acids or their anhydrides can be used alone or in combination of two or more.
また上記のテトラカルボン酸またはその無水物と反応し
てポリイミド前駆体を与えるジアミン化合物としては1
式(2)
%式%(2)
(式中、114は、2価の芳香族基、脂肪族基、脂環式
基またはオルガノシロキサン基である)で表わされる化
合物が挙げられる。前記式(2)における好ましい馬と
しては1例えば。In addition, the diamine compound which reacts with the above-mentioned tetracarboxylic acid or its anhydride to give a polyimide precursor is 1
Examples include compounds represented by formula (2) % formula % (2) (in the formula, 114 is a divalent aromatic group, aliphatic group, alicyclic group, or organosiloxane group). A preferable horse in formula (2) is 1, for example.
I
(式中Xs、 Xs、 Xs及びX4は、同−又は異な
っていてもよく水素原子、炭化水素化合物筒たはその置
換体の1価の基であり、Yは−CHz −C2H< 。I (wherein Xs, Xs, Xs and X4 may be the same or different and represent a hydrogen atom, a monovalent group of a hydrocarbon compound or a substitute thereof, and Y is -CHz -C2H<).
OCHs CFs
は−CONH−であるl −(CHz)m (mは2
〜5゜賜
の整数) (CHz)3C(CHsン、−9Hs
R4R4
R@ 馬
(式中RsおよびR6は2価の有機基であり、 R4,
Rse島および山は同−又は異なる炭化水素化合物また
はその置換体の1価の基であシ、/、にはO又は1〜2
0の整数である)などがある。OCHs CFs is -CONH- l -(CHz)m (m is 2
~5° integer) (CHz)3C(CHsn, -9Hs R4R4 R@horse (in the formula, Rs and R6 are divalent organic groups, R4,
Rse islands and mountains are monovalent groups of the same or different hydrocarbon compounds or substituents thereof, /, is O or 1 to 2
is an integer of 0).
上記式(2)で表わされるジアミン化合物の具体例トシ
ては、p−フェニレンジアミン、m−フ二二しンジアミ
ン、4.4’−ジアミノジフェニルメタン。Specific examples of the diamine compound represented by the above formula (2) include p-phenylene diamine, m-phenylene diamine, and 4,4'-diaminodiphenylmethane.
4.4′−ジアミノジフェニルエタン、ベンジジン。4.4'-Diaminodiphenylethane, benzidine.
4.4′−ジアミノジフェニルスルフィド、4.4’−
ジアミノジフェニルスルホン、4.4’−ジアミノジフ
ェニルエーテル、3.3’−ジアミノベンゾフェノン。4.4'-diaminodiphenyl sulfide, 4.4'-
Diaminodiphenylsulfone, 4,4'-diaminodiphenyl ether, 3,3'-diaminobenzophenone.
4.4′−ジアミノベンゾフェノ7.1.5−ジアミノ
ナフタレン、3.3’−ジメチル−4,4′−ジアミノ
ビフェニル、3.4’−ジアミノジフェニルエーテル。4.4'-Diaminobenzopheno7.1.5-diaminonaphthalene, 3.3'-dimethyl-4,4'-diaminobiphenyl, 3.4'-diaminodiphenyl ether.
2.2−ジ(p−アミノフェニル)へキ丈フロロプロパ
ン、3.4’−ジアミノベンズアニリド、m−キシリレ
ンジアミン、p−キシリレンジアミン、エチレンジアミ
ン、1.3−プロパンジアミン、テトラメチレンジアミ
ン、ペンタメチレンジアミン。2.2-di(p-aminophenyl)fluoropropane, 3.4'-diaminobenzanilide, m-xylylenediamine, p-xylylenediamine, ethylenediamine, 1.3-propanediamine, tetramethylenediamine , pentamethylene diamine.
ヘキサメチレンジアミン、ヘプタメチレンジアミン、オ
クタメチレンシアξン、ノナメチレンジアミン、4.4
’−ジメチルへブタメチレンジアミン。Hexamethylene diamine, heptamethylene diamine, octamethylene diamine, nonamethylene diamine, 4.4
'-Dimethylhebutamethylenediamine.
1.4−ジアミノシクロヘキサン、テトラヒドロジシク
ロペンタジエニレンジアミン、ヘキサヒドロ−4,7−
メタノイングニレンジメチレンジアミン。1.4-diaminocyclohexane, tetrahydrodicyclopentadienylenediamine, hexahydro-4,7-
Metanoing nylene dimethylene diamine.
トリシクロ(6,2,1,O”〕−ウランデシレンジメ
チルジアミン
R,R
(両式において几はHまたはCH3)
(両式においてR′はH,CHs、C1lたはBr)C
Hs CH3
等を挙けることができる。これらのジアミン化合物は、
1種類単独でも2種類以上を組み合わせても使用するこ
とができる。Tricyclo(6,2,1,O'']-Urandecylenedimethyldiamine R,R (In both formulas, 几 is H or CH3) (In both formulas, R' is H, CHs, C1l or Br)C
Examples include Hs CH3 and the like. These diamine compounds are
One type can be used alone or two or more types can be used in combination.
脂肪族ま九は脂環式テトラカルボン酸又はその無水物と
ジアミン化合物との反応は通常不活性な有機溶媒中で0
通常θ〜100℃、好ましくは5〜60℃の温度で行な
われ、ポリイミド前駆体の有機溶媒溶液として得られる
。脂肪族または脂環式テトラカルボン酸又はその無水物
とジアミン化合物は前者/後者が0.8 / 1〜1.
2/1(モル比)の割合で使用するのが好lしく、特に
均等モルで使用するのが好′よしい。The reaction between an aliphatic or alicyclic tetracarboxylic acid or its anhydride and a diamine compound is usually carried out in an inert organic solvent.
It is usually carried out at a temperature of θ to 100°C, preferably 5 to 60°C, and is obtained as a solution of the polyimide precursor in an organic solvent. The ratio of the aliphatic or alicyclic tetracarboxylic acid or its anhydride and the diamine compound is 0.8/1 to 1.
It is preferable to use them in a ratio of 2/1 (molar ratio), and it is particularly preferable to use them in equimolar amounts.
上記反応に用いる有機溶媒としては生成するポリイミド
前駆体を完全に溶解する極性溶媒が一般に好’JL<、
例えばN−メチル−2−ピロリドン。As the organic solvent used in the above reaction, it is generally preferable to use a polar solvent that completely dissolves the produced polyimide precursor.
For example, N-methyl-2-pyrrolidone.
N、N−ジメチルアセトアミド、N、N−ジメチルホル
ムアミド、ジメチルスルホキシド、テトラメチル尿素、
ヘキサメチルリン酸トリアミド、r−ブチロラクトン等
が挙げられる。その他、この極性溶媒以外に一般的有機
溶媒であるアルコール類。N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, tetramethylurea,
Examples include hexamethylphosphoric acid triamide, r-butyrolactone, and the like. In addition to these polar solvents, alcohols are common organic solvents.
ケトン類、エステル類、ラクトン類、エーテル類。Ketones, esters, lactones, ethers.
ハロゲン化炭化水素、炭化水素類例えばメチルアルコー
ル、エチ、ルアルコール、メチルセロソルブ。Halogenated hydrocarbons, hydrocarbons such as methyl alcohol, ethyl alcohol, methyl cellosolve.
エチルセロソルブ、アセトン、メチルエチルケトン、メ
チルイソブチルケトン、シクロヘキサノン。Ethyl cellosolve, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone.
酢酸メチル、酢酸エチル、酢酸ブチル、シュウ酸ジエチ
ル、マロン酸ジエチル、r−ブチロラクト/、ジエチル
エーテル、エチレングリコールジメチルエーテル、ジエ
チレンクリコールジメチルエーテル、テトラヒドロフラ
ン、ジクロロメタン。Methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, diethyl malonate, r-butyrolact/, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran, dichloromethane.
1.2−ジクロロエタン、1.4−ジクロルブタン。1,2-dichloroethane, 1,4-dichlorobutane.
トリクaルエタン、クロルペンゼア、 O−ジクaル
ベンゼン、ヘキサン、ヘプタン、オクタン、ベンゼン、
トルエン、キシレン等も使用することができる。ポリイ
ミド前駆体を完全に溶解させるためにはこれらの一般的
有機溶媒は前記の極性溶媒と混合して用いることが望ま
しい。この有機溶媒の使用針は感光性樹脂組成物中の1
0〜95重曾チであり、好ましくは30〜80重量%で
ある。Triqual ethane, chlorpenzea, O-dical benzene, hexane, heptane, octane, benzene,
Toluene, xylene, etc. can also be used. In order to completely dissolve the polyimide precursor, it is desirable to use these general organic solvents in combination with the above-mentioned polar solvent. The needle used for this organic solvent is 1 in the photosensitive resin composition.
It is 0 to 95% by weight, preferably 30 to 80% by weight.
本発明において用いられる重合性不飽和化合物としては
各種のものがあるが、アクリル酸系化合物、メタクリル
酸系化合物等が実用的である。具体的なアクリル酸系化
合物としてはアクリル酸。There are various types of polymerizable unsaturated compounds used in the present invention, and acrylic acid compounds, methacrylic acid compounds, and the like are practical. A specific example of an acrylic acid compound is acrylic acid.
メチルアクリレート、エチルアクリレート、n−プロピ
ルアクリレート、インプロビルアクリレート、n−ブチ
ルアクリレート、インブチルアクリレート、シクロへキ
シルアクリレート、ベンジルアクリレート、カルピトー
ルアクリレート、メトキシエチルアクリレート、エトキ
シエチルアクリレート、ブトキシエチルアクリレート、
とドロキシエチルアクリレート、ヒドロキシプロピルア
クリレート、プチレ/グリコールモノアクリレート。Methyl acrylate, ethyl acrylate, n-propyl acrylate, improvil acrylate, n-butyl acrylate, inbutyl acrylate, cyclohexyl acrylate, benzyl acrylate, carpitol acrylate, methoxyethyl acrylate, ethoxyethyl acrylate, butoxyethyl acrylate,
and droxyethyl acrylate, hydroxypropyl acrylate, petite/glycol monoacrylate.
N、N−ジメチルアミノエチルアクリレ−)、N、N−
ジエチルアミノエチルアクリレート、グリシジルアクリ
レート、テトラヒドロフルフリルアクリレート、ペンタ
エリスリトールモノアクリレート。N, N-dimethylaminoethyl acrylate), N, N-
Diethylaminoethyl acrylate, glycidyl acrylate, tetrahydrofurfuryl acrylate, pentaerythritol monoacrylate.
トリメチロールプロパンモノアクリレート、了りルアク
リレート、1.3−プロピレングリコールジアクリレー
ト、1.4−ブチレングリコールジアクリレート、1.
6−ヘキサングリコールジアクリレート、ネオペンチル
グリコールジアクリレート。Trimethylolpropane monoacrylate, Oriru acrylate, 1.3-propylene glycol diacrylate, 1.4-butylene glycol diacrylate, 1.
6-hexane glycol diacrylate, neopentyl glycol diacrylate.
ジグロビレングリコールジアクリレート、ス2−ビス−
(4−アクリロキシジェトキシフェニルンフOハン、ス
2−ビス−(4−アクリロキシプロピルキシフェニル)
プロパン、トリメチロールプロパンジアクリレート、べ
/タエリスリトールジアクリレート、トリメチa−ルプ
ロパントリアクリレート、ペンタエリスリトールトリア
クリレート、トリアクリルホルマール、テトラメチロー
ルメタンテトラアクリレート、トリス(2−ヒドロキシ
エチル)イソシアヌル酸のアクリル酸エステル。Diglobylene glycol diacrylate, 2-bis-
(4-acryloxyjethoxyphenylphenyl, 2-bis-(4-acryloxypropylxphenyl)
Acrylic acid of propane, trimethylolpropane diacrylate, be/taerythritol diacrylate, trimethylalpropane triacrylate, pentaerythritol triacrylate, triacryl formal, tetramethylolmethanetetraacrylate, tris(2-hydroxyethyl)isocyanuric acid ester.
(nは1〜30の整数j
CH3
一÷CH雪CHzO+7i−CCH= CHz(n、m
はn+mが2〜30となる引IC山Br
等を挙げることができ、またメタクリル酸系化合物とし
ては、メタクリル酸、メチルメタクリレート、エチルメ
タクリレート、プロピルメタクリレート、イソプロピル
メタクリレート、ブチルメタクリレート、イソブチルメ
タクリレート、シクロへキシルメタクリレート、ベンジ
ルメタクリレート、オクチルメタクリレート、エチルへ
キシルメタクリレート、メトキシエチルメタクリレート
。(n is an integer from 1 to 30 j
Examples of methacrylic acid compounds include methacrylic acid, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, isobutyl methacrylate, cyclohe Xyl methacrylate, benzyl methacrylate, octyl methacrylate, ethylhexyl methacrylate, methoxyethyl methacrylate.
エトキシエチルメタクリレート、ブトキシエチルメタク
リレート、ヒドロキシエチルメタクリレート、ヒドロキ
シプロピルメタクリレート、ヒドロキシブチルメタクリ
レート、ヒドロキシベンチルメタクリレ−)、N、N−
ジメチルアミノメタクリレート、N、N−ジエチルアミ
ノメタクリレート。ethoxyethyl methacrylate, butoxyethyl methacrylate, hydroxyethyl methacrylate, hydroxypropyl methacrylate, hydroxybutyl methacrylate, hydroxybentyl methacrylate), N, N-
Dimethylamino methacrylate, N,N-diethylamino methacrylate.
グリシジルメタクリレート、テトラヒドロフルフリルメ
タクリレート、メタクリロキシプロピルトリメトキシシ
ラン、アリルメタクリレート、トリメチロールプロパン
モノメタクリレート、ペンタエリスリトールモノメタク
リレート、1.3−ブチレングリコールジメタクリレー
ト、l、6−ヘキサンゲリコールジメタクリレート、ネ
オベンチルグリコールジメタクリレート、2.2−ビス
−(4−メタクリロキシジェトキシフェニル)プロパン
、トリメチロールプロパンジメタクリレート、ペンタエ
リスリトールジメタクリレート、トリメチロールプロパ
ントリアクリレート、ペンタエリスリトールトリメタク
リレート、テトラメチロールメタンテトラメタクリレー
ト、トリス(2−ヒドロキシエチル)インシアヌル酸の
メタクリル酸エステル。Glycidyl methacrylate, tetrahydrofurfuryl methacrylate, methacryloxypropyltrimethoxysilane, allyl methacrylate, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate, 1,3-butylene glycol dimethacrylate, l,6-hexane gelicoldimethacrylate, neobenchi 2,2-bis-(4-methacryloxyjethoxyphenyl)propane, trimethylolpropane dimethacrylate, pentaerythritol dimethacrylate, trimethylolpropane triacrylate, pentaerythritol trimethacrylate, tetramethylolmethanetetramethacrylate, Methacrylic acid ester of tris(2-hydroxyethyl)incyanuric acid.
(nは1〜30の整数ン
→CH*Cl1zO←CC= CH2
CH3
(n、mはn−4−mが1〜30となる整数)HzBr
等を挙げることができる。クロトン酸ブチル、グリセリ
ンモノクロネート、ビニルブチレート、ビニルトリメチ
ルアセテート、ビニルカプロエート。(n is an integer of 1 to 30 → CH*Cl1zO←CC= CH2 CH3 (n, m are integers where n-4-m is 1 to 30) HzBr etc. Butyl crotonate, glycerin monochrome, etc. nate, vinyl butyrate, vinyl trimethyl acetate, vinyl caproate.
ビニルクロルアセテート、ビニルラクテート、安息香酸
ビニル、ジビニルサクシネート、ジビニルフタレート、
メタクリルアミド、N−メチルメタクリルアミド、N−
エチルメタクリルアミド、N−アリールメタクリルアミ
ド、N−ヒドロキシエチル−N−メチルメタクリルアミ
ド、アクリルアミド、N−t−ブチルアクリルアミド、
N−メチロールアクリルアミド、N−インブトキシメチ
ルアクリルアミド、N−ブトキシメチルアクリルアミド
、ダイア七トンアクリルアミド、ヘキシルビニルエーテ
ル、エチルヘキシルビニルエーテル。Vinyl chloroacetate, vinyl lactate, vinyl benzoate, divinyl succinate, divinyl phthalate,
Methacrylamide, N-methylmethacrylamide, N-
Ethyl methacrylamide, N-aryl methacrylamide, N-hydroxyethyl-N-methyl methacrylamide, acrylamide, N-t-butylacrylamide,
N-methylolacrylamide, N-imbutoxymethylacrylamide, N-butoxymethylacrylamide, diaseptone acrylamide, hexyl vinyl ether, ethylhexyl vinyl ether.
ビニルトリルエーテル、多価アルコールのポリビニルエ
ーテル、オルト及びパラ位にアルキル基。Vinyl tolyl ether, polyvinyl ether of polyhydric alcohol, alkyl groups in ortho and para positions.
アルコキシ基、ハロゲン、カルボキシル基、アリル基な
どの置換基を有するスチレン誘導体、ジビニルベンゼン
、アリルオキシエタノール、ジカルボン酸のジアリルエ
ステル、N−ビニルオキサゾリドン、N−ビニルイミダ
ゾール、N−ビニルピロリドン、N−ビニルカルバゾー
ル等の重合性不飽和化合物を用いることもできる。これ
らは単独で−tiは二種以上用いられる。Styrene derivatives with substituents such as alkoxy groups, halogens, carboxyl groups, allyl groups, divinylbenzene, allyloxyethanol, diallyl esters of dicarboxylic acids, N-vinyloxazolidone, N-vinylimidazole, N-vinylpyrrolidone, N-vinyl Polymerizable unsaturated compounds such as carbazole can also be used. These may be used alone or two or more types of -ti may be used.
光重合開始剤としては一般に紫外線硬化型塗料の光重合
開始剤として用いられている各種の化合物を使用できる
。例えば、ミヒラーズヶトン、ベンゾイン、2−メチル
ベンゾイン、ベンゾインメチルエーテル、ベンゾインエ
チルエーテル、ペンソイ/インプロピルエーテル、ベン
ゾインブチルエーテル、2−1−ブチルアントラキノ/
、l、2−ベンゾ−9,10−アントラキノン、アント
ラキノン、メチルアントラキノン、4.4’−ビス(ジ
エチルアミノ)ベンゾフェノン、アセトフェノン。As the photopolymerization initiator, various compounds that are generally used as photopolymerization initiators for ultraviolet curable paints can be used. For example, Michlerskaton, benzoin, 2-methylbenzoin, benzoin methyl ether, benzoin ethyl ether, pensoy/impropyl ether, benzoin butyl ether, 2-1-butyl anthraquino/
, l,2-benzo-9,10-anthraquinone, anthraquinone, methylanthraquinone, 4,4'-bis(diethylamino)benzophenone, acetophenone.
ベンゾフェノン、チオキサ7トン、1.5−ア七ナフテ
ン、2.2−ジメトキシ−2−フェニルアセトフェノン
、1−ヒドロキシンクロへキシル7二二ルケトン、2−
メチル−(4−(メチルチオ)フェニル)−2−モルフ
オIJ/−1−7’ロバノン。Benzophenone, Thioxa 7ton, 1.5-A7naphthene, 2.2-dimethoxy-2-phenylacetophenone, 1-Hydroxynchlorohexyl722ketone, 2-
Methyl-(4-(methylthio)phenyl)-2-morphoIJ/-1-7'lovanone.
ジアセチル、ベンジル、ベンジルジメチルケタール、ベ
ンジルジエチルケタール、ジフェニルジスルフィド、ア
ントラセン等を挙げることができる。Examples include diacetyl, benzyl, benzyl dimethyl ketal, benzyl diethyl ketal, diphenyl disulfide, anthracene, and the like.
これらの光重合開始剤の使用量は、感光性樹脂組成物の
光硬化性および塗膜の耐熱性の点から重合性不飽和化合
物100重量部に対して好ましくは0.01〜30重量
部、より好ましくは0.1〜10重量部の範囲とされる
。これらの光重合開始剤に公知の増感助剤であるアミン
類を少量併用することもできる。また組成物の熱的な安
定性を向上させるために、公知の熱重合禁止剤を共存さ
せることが好ましい。The amount of these photopolymerization initiators to be used is preferably 0.01 to 30 parts by weight per 100 parts by weight of the polymerizable unsaturated compound from the viewpoint of photocurability of the photosensitive resin composition and heat resistance of the coating film. More preferably, it is in the range of 0.1 to 10 parts by weight. A small amount of amines, which are known sensitizing aids, can also be used in combination with these photopolymerization initiators. Further, in order to improve the thermal stability of the composition, it is preferable to coexist a known thermal polymerization inhibitor.
熱重合禁止剤の具体例としては、p−メトキシフェノー
ル、ヒドロキノン、t−ブチルカテコール、ピロガロー
ル、フェノ−チアジン、クロラニールウナフチルアミン
、β−ナフトール、2.6−ジーt−ブチル−p−クレ
ゾール、ピリジン、ニトロベンゼン、 p−)ルイジン
、メチレンブルー。Specific examples of thermal polymerization inhibitors include p-methoxyphenol, hydroquinone, t-butylcatechol, pyrogallol, phenothiazine, chloraniel unaphthylamine, β-naphthol, 2,6-di-t-butyl-p-cresol, Pyridine, nitrobenzene, p-)luidine, methylene blue.
42′−メチレンビス(4−メチル−6−t−ブチルフ
ェノール)、2.2’−メチレンビス(4−エチー6−
1−ブチルフェノール)等が挙げラレ、ソの使用量は重
合性不飽和化合物100重量部に対して通常0.001
〜10重量部とするのが好ましい。42'-methylenebis(4-methyl-6-t-butylphenol), 2,2'-methylenebis(4-ethy6-
(1-butylphenol) etc., and the amount used is usually 0.001 parts by weight per 100 parts by weight of the polymerizable unsaturated compound.
It is preferable to set it as 10 parts by weight.
本発明になる感光性樹脂組成物は有機溶媒を含むが、こ
の有機溶媒は、上記の反応に用いた有機溶媒を用いても
よく、また9反応に用いた有機溶媒を上記に記載された
他の有機溶媒に変えてもよい。The photosensitive resin composition of the present invention contains an organic solvent, but the organic solvent used in the above reaction may be used, or the organic solvent used in the 9 reactions may be used in addition to those described above. You may change it to an organic solvent.
有機溶媒の使用口は感光性樹脂組成物の10〜95重に
%組成物の粘度の点から好ましくは30〜80重f1%
の範囲とされる。The amount of organic solvent to be used is preferably 10 to 95% by weight of the photosensitive resin composition, and preferably 30 to 80% by weight from the viewpoint of the viscosity of the composition.
The range of
本発明になる感光性樹脂組成物は、上記の成分を含むが
、これらの混合順序、混合方法等には特に制限はない。The photosensitive resin composition of the present invention contains the above-mentioned components, but there are no particular restrictions on the order, mixing method, etc. of these components.
本発明においては、金属板、銅張り積層板、シリコンウ
ェハ等の基材上に上記で説明した感光性樹脂組成物より
感光層を形成する工程が必ず含まれる。被覆すべき基材
上に感光層を形成する工程は常法で行なわれる。例えば
感光性樹脂組成物をディップコート法、70−コート法
等で基材上に塗布し、有機溶媒を乾燥して行なわれる。The present invention necessarily includes a step of forming a photosensitive layer from the above-described photosensitive resin composition on a base material such as a metal plate, a copper-clad laminate, or a silicon wafer. The step of forming the photosensitive layer on the substrate to be coated is carried out in a conventional manner. For example, the photosensitive resin composition is applied onto a substrate by a dip coating method, a 70-coating method, etc., and the organic solvent is dried.
感光性樹脂組成物を基板上に直接塗布せずに、これを支
持体フィルム上にナイフコート法、ロールコート法等公
知の方法で塗布乾燥し、支持体フィルム上に感光性樹脂
組成物の鳩を有する感光性エレメントを製造したのち、
該感光性エレメントを基材上に公知の方法で加圧積層し
て、該基材上に感光層を形成することも可能である。The photosensitive resin composition is not directly coated on the substrate, but is coated and dried on the support film by a known method such as knife coating or roll coating, and the photosensitive resin composition is coated on the support film. After manufacturing a photosensitive element having
It is also possible to form a photosensitive layer on the substrate by laminating the photosensitive element on the substrate by a known method under pressure.
本発明においては感光層を活性光でイメージ的に露光す
る工程が必ず含まれる。イメージ的に露光する工程にお
ける光源には、高圧水銀灯、超高圧水銀灯等が用いられ
、この際ネガマスクを通して照射が行なわれる。また微
小断面積に絞ったレーザ光線等を像的にスキャンして行
なうこともできる。The present invention necessarily includes a step of imagewise exposing the photosensitive layer to active light. A high-pressure mercury lamp, an ultra-high-pressure mercury lamp, or the like is used as a light source in the imagewise exposure process, and at this time, irradiation is performed through a negative mask. It is also possible to imagewise scan a laser beam or the like focused on a minute cross-sectional area.
本発明においては、イメージ的に露光を行なった後、ア
ルカリ水溶液で現像する工程が必ず含まれる。The present invention necessarily includes a step of developing with an alkaline aqueous solution after imagewise exposure.
アルカリ水溶液に用いられる適尚な塩基としてはアルカ
リ金属、4級アンモニウムの水酸化物。Suitable bases for use in alkaline aqueous solutions include hydroxides of alkali metals and quaternary ammonium.
炭酸塩2重炭酸塩、ケイ酸塩、リン酸塩、ピクリン酸塩
、酢酸塩、アミン類等が用いられる。これらの具体例と
しては、水酸化リチウム、水酸化ナトリウム、水酸化カ
リウム、水酸化アンモニウム。Carbonates, bicarbonates, silicates, phosphates, picrates, acetates, amines, etc. are used. Specific examples of these include lithium hydroxide, sodium hydroxide, potassium hydroxide, and ammonium hydroxide.
トリメチルペンジルアンモニウムヒドロキシト。Trimethylpendylammonium hydroxide.
テトラメチルアンモニウムヒドロキシド、炭酸ナトリウ
ム、炭酸カリウム、炭酸水素ナトリウム。Tetramethylammonium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate.
ケイ酸ナトリウム、リン酸ナトリウム、ピロリン酸ナト
リウム、酢酸ナトリウム、モノエタノールアミン、ジェ
タノールアミン、トリエタノールアミン等が挙げられる
。その使用量は、水100重量部に対して通常o、oo
oi〜30重量部、好ましくはo、 o o i〜10
重量部である。Examples include sodium silicate, sodium phosphate, sodium pyrophosphate, sodium acetate, monoethanolamine, jetanolamine, triethanolamine, and the like. The amount used is usually o or oo per 100 parts by weight of water.
oi~30 parts by weight, preferably o, o oi~10
Parts by weight.
また、このようなアルカリ水溶液で現像残りを生じる場
合にはアルカリ水溶液に有機溶媒を添加して用いること
もできる。有機溶媒としては上記したポリイミド前駆体
の合成時に使用した極性溶媒が一般に好ましい。その他
、この極性溶媒以外に上記した一般的有機溶媒も使用す
ることができる。有機溶媒の使用量は、アルカリ水溶液
100重量部に対して通常0.1〜100重址部、好ま
しくは5〜50重を部である。Further, if such an alkaline aqueous solution causes residual development, an organic solvent can be added to the alkaline aqueous solution. As the organic solvent, the polar solvent used in the synthesis of the polyimide precursor described above is generally preferred. In addition to this polar solvent, the above-mentioned general organic solvents can also be used. The amount of organic solvent used is usually 0.1 to 100 parts by weight, preferably 5 to 50 parts by weight, per 100 parts by weight of the aqueous alkaline solution.
本発明の感光性樹脂組成物は、現像処理後。After the photosensitive resin composition of the present invention is developed.
80〜400℃の加熱処理および必要に応じさらに活性
光の絽光により、&れた耐熱性を有する眉間絶縁膜材料
等に変換しうるもので、主として前述のような微細加工
の分野において非常に有用である。By heat treatment at 80 to 400°C and, if necessary, irradiation with active light, it can be converted into a glabella insulating film material with excellent heat resistance, and is extremely useful mainly in the field of microfabrication as mentioned above. Useful.
(発明の効果)
本発明によって9作業環境上安全に耐熱性に優れ、厚膜
な画像を得ることができる。(Effects of the Invention) According to the present invention, it is possible to obtain thick images that are safe in the working environment and have excellent heat resistance.
(実施例)
次に1本発明を実施例により説明するが9本発明はこれ
らに限定されるものではない。(Examples) Next, the present invention will be explained by examples, but the present invention is not limited to these examples.
実施例1
温度計、窒素ガス導入口及び攪拌装置を付した500r
rLeの四つロフラスコに5−(2,5−ジオキソテト
ラヒドロフリル)−3−メチル−3−シクロヘキセ/−
1,2−ジカルボン酸無水物(大日本インキ化学工業社
製)5L849(0,2モル)及びN、N−ジメチルア
セトアミド250ゴを加え。Example 1 500r equipped with a thermometer, nitrogen gas inlet and stirring device
5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexe/- in a four-bottle flask of rLe
1,2-dicarboxylic anhydride (manufactured by Dainippon Ink & Chemicals) 5L849 (0.2 mol) and 250 g of N,N-dimethylacetamide were added.
乾燥窒素ガス流通下で室温にて攪拌した。次に4゜4′
−ジアミノジフェニルエーテル(三井東圧化学社製)を
40.059(0,2モル)加えてこの溶液を室温にお
いて8時間攪拌して、粘稠なポリイミド前駆体を得た。The mixture was stirred at room temperature under a stream of dry nitrogen gas. Next 4°4'
40.059 (0.2 mol) of -diaminodiphenyl ether (manufactured by Mitsui Toatsu Chemical Co., Ltd.) was added, and the solution was stirred at room temperature for 8 hours to obtain a viscous polyimide precursor.
この溶液にテトラエチレングリコールジアクリレート(
新中村化学社製)を92.99加え、光遮断下で、ベン
ゾフェノン5.4g及び4.4′−ビス(ジエチルアミ
ノ)ベンゾフェノン0.6gを加え攪拌混合後、フィル
ターでろ過して感光性樹脂組成物を得た。Add tetraethylene glycol diacrylate (
(manufactured by Shin Nakamura Chemical Co., Ltd.) was added, and under light shielding, 5.4 g of benzophenone and 0.6 g of 4,4'-bis(diethylamino)benzophenone were added, stirred and mixed, and filtered through a filter to form a photosensitive resin. I got something.
この組成物を銅張り積層板(日立化成工業株式会社製
MCL−E−61)上にバーコータによって乾燥厚みが
50μmとなるように塗工し、80℃で30分間加熱乾
燥し、ついで上記の塗膜部をパターンマスクし、 30
0 mJ/cm”の紫外線を照射後、2重ffi%の炭
酸す) IJウム水溶液で現像し。This composition was applied to a copper-clad laminate (manufactured by Hitachi Chemical Co., Ltd.).
MCL-E-61) was coated with a bar coater to a dry thickness of 50 μm, heated and dried at 80°C for 30 minutes, and then the above coated film was pattern masked.
After irradiating with ultraviolet rays of 0 mJ/cm'', it was developed with a double FFI% IJ aqueous solution.
水でリンスを行なったところ、鮮明な樹脂・;ターンが
得られた。この樹脂パターンの塗膜は、250℃で1時
間加熱によるボストキュア後、熱重量分析を行なったと
ころ、10%重量重量減変温425℃と良好な耐熱性を
有するものであった。When rinsed with water, a clear resin turn was obtained. When this resin pattern coating film was subjected to thermogravimetric analysis after being post-cured by heating at 250°C for 1 hour, it was found to have good heat resistance with a 10% weight loss in temperature of 425°C.
実施例2
実施例1と同様にフラスコに1.2.3.4−ブタンテ
トラカルボン酸無水物(三井東圧ファイン社製)39.
639(0,2モル)及びN、N−ジメチルアセトアミ
ド250 mlを加え、実施例1と同様にして4.4′
−ジアミノジフェニルエーテル40.059(0,2モ
ル)を加えて、粘稠なポリイミド前駆体を得た。Example 2 Similarly to Example 1, 1.2.3.4-butanetetracarboxylic anhydride (manufactured by Mitsui Toatsu Fine Co., Ltd.) 39.
639 (0.2 mol) and 250 ml of N,N-dimethylacetamide were added, and 4.4'
- Diaminodiphenyl ether 40.059 (0.2 mol) was added to obtain a viscous polyimide precursor.
この溶液にF’A−73LA(日立化成工業製トリス(
2−アクリロイルエチル)イソシアヌレート)を79.
39加え、光遮断下でベンジルジメチルケタール(チバ
・ガイギー社製)を4.2g加えて攪拌混合後、フィル
ターでろ過して感光性樹脂組成物を得た。この組成物を
実施例1と同様にして塗布し、透明な50μ厚の塗膜を
得た。この塗膜に300 mJ /cm”の照射を行な
い、実施例1と同様にして現像、リンスを行なったとこ
ろ、鮮明な樹脂パターンを得た。Add F'A-73LA (Tris manufactured by Hitachi Chemical Co., Ltd.) to this solution.
2-acryloylethyl isocyanurate) at 79.
In addition, 4.2 g of benzyl dimethyl ketal (manufactured by Ciba Geigy) was added under light shielding, and the mixture was stirred and mixed, followed by filtration with a filter to obtain a photosensitive resin composition. This composition was applied in the same manner as in Example 1 to obtain a transparent coating film with a thickness of 50 μm. When this coating film was irradiated with 300 mJ/cm'', developed and rinsed in the same manner as in Example 1, a clear resin pattern was obtained.
この樹脂パターンの塗膜は実施例1記載の評価で熱重量
分析を行なったところ、10%重量重量減変温452℃
と良好な耐熱性を有するものであった。When thermogravimetric analysis was performed on this resin pattern coating film in the evaluation described in Example 1, it was found that the weight loss was 10% at a temperature of 452°C.
It had good heat resistance.
実施例3
実施例1と同様にフラスコに5−(2,5−ジオキンテ
トラヒドロフリル)−3−メチル−3−シクロヘキセン
−1,2−ジカルボン酸無水物52.849(0,2モ
ル)及びN、N−ジメチルアセトアミド250 mlを
加え、実施例1と同様にして4.4’ −ジアミノジフ
ェニルエーテル40.05(0,2g)を用いて粘稠な
ポリイミド前駆体を得た。Example 3 In the same manner as in Example 1, 52.849 (0.2 mol) of 5-(2,5-dioquintetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic acid anhydride and 250 ml of N,N-dimethylacetamide was added, and in the same manner as in Example 1, a viscous polyimide precursor was obtained using 40.05 (0.2 g) of 4,4'-diaminodiphenyl ether.
この溶液にFA−731A ()リス(2−アクリロイ
ルエチル)インシアヌレート192.89加え、光遮断
下でベンゾフェノン5.49及ヒ4.4’−ビス(ジエ
チルアミノ)ベンゾフェノン0.6gを加え攪拌混合後
、フィルターでろ過して感光性樹脂組成物を得た。この
組成物を実施例1と同様にして塗布し、透明な50μ厚
の塗膜を得た。この塗膜に300mJ/am”の照射を
行ない、1重量%トリエタノールアミン水溶液で現像し
、水でリンスしたところ鮮明な樹脂パターンを得た。To this solution, add 192.89 g of FA-731A () lis(2-acryloylethyl)in cyanurate, add 5.49 g of benzophenone and 0.6 g of 4,4'-bis(diethylamino)benzophenone under light shielding, and mix with stirring. Thereafter, it was filtered through a filter to obtain a photosensitive resin composition. This composition was applied in the same manner as in Example 1 to obtain a transparent coating film with a thickness of 50 μm. This coating film was irradiated at 300 mJ/am'', developed with a 1% by weight triethanolamine aqueous solution, and rinsed with water to obtain a clear resin pattern.
この樹脂パターンの塗膜は実施例1記載の評価で熱重量
分析を行なったところ、10チ重量減少温度は430℃
と良好な耐熱性を有するものであった。When this resin pattern coating film was subjected to thermogravimetric analysis according to the evaluation described in Example 1, the 10 inch weight loss temperature was 430°C.
It had good heat resistance.
実施例4
実施例1と同様にフラスコに1.2.3.4−ブタンテ
トラカルボン酸二無水物39.63(0,2モル)9及
びN、N−ジメチルアセトアミド250mA’を加え、
実施例1と同様にして4.4′−ジアミノジフェニルエ
ーテル40.059(0,2モル)を用いて粘稠なポリ
イミド前駆体を得た。Example 4 In the same manner as in Example 1, 39.63 (0.2 mol) of 1.2.3.4-butanetetracarboxylic dianhydride and 250 mA' of N,N-dimethylacetamide were added to the flask.
A viscous polyimide precursor was obtained in the same manner as in Example 1 using 40.059 (0.2 mol) of 4,4'-diaminodiphenyl ether.
この溶液にA−BPE−10(新中村化学社製ス2−ビ
ス(4−アクリロキシペンタエトキシフェニル)プロパ
ン)を79゜6g加え光遮断下でベンゾフェノン5.4
g及び4.4′−ビス(ジエチルアミノ)ベンゾフェノ
ン0.6gを加え攪拌混合後。To this solution, 79°6 g of A-BPE-10 (S2-bis(4-acryloxypentaethoxyphenyl)propane manufactured by Shin-Nakamura Chemical Co., Ltd.) was added, and 5.4 g of benzophenone was added under light shielding.
g and 0.6 g of 4,4'-bis(diethylamino)benzophenone were added and mixed with stirring.
フィルターでろ過して感光性樹脂組成物を得た。A photosensitive resin composition was obtained by filtration with a filter.
この組成物を実施例1と同様にして塗布し、透明な50
μ厚の塗膜を得た。この塗膜に300mJ/Cm’の照
射を行ない、実施例3と同様にして現像。This composition was applied in the same manner as in Example 1, and a transparent 50%
A coating film with a thickness of μ was obtained. This coating film was irradiated with 300 mJ/Cm' and developed in the same manner as in Example 3.
リンスを行なったところ、鮮明な樹脂パターンを得た。After rinsing, a clear resin pattern was obtained.
この樹脂パターンの塗膜は実施例1記載の評価で熱重量
分析を行なったところ、10%重量重量減変温439℃
と良好な耐熱性を有するものであった。When thermogravimetric analysis was performed on this resin pattern coating film in the evaluation described in Example 1, it was found that the weight loss was 10% and the temperature was 439°C.
It had good heat resistance.
実施例5
実施例1と同様にフラスコに5−(2,5−ジオキソテ
トラヒドロフリル)−3−メチル−3−フクロヘキセン
−1,2−ジカルボン酸無水物5289(0,2モル)
及びN、N−ジメチルアセトアミド250 mlを加え
、乾燥窒素ガス流通下で室温で攪拌した。次に下記の構
造式を有するシリコーンジアミン(信越化学工業■製
LP−103)49.69(0,2モル)を加え。Example 5 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-fuclohexene-1,2-dicarboxylic anhydride 5289 (0.2 mol) was placed in a flask in the same manner as in Example 1.
and 250 ml of N,N-dimethylacetamide were added, and the mixture was stirred at room temperature under dry nitrogen gas flow. Next, silicone diamine having the following structural formula (manufactured by Shin-Etsu Chemical Co., Ltd.)
LP-103) 49.69 (0.2 mol) was added.
Cl−l5 C)ム
この溶液を室温で8時間攪拌して、粘稠なポリイミド前
駆体を得た。この溶液にテトラエチレングリコールジア
クリレート(新中村化学社製)を9L99加え、光遮断
下でベンゾフェノン5.49及び4.4′−ビス(ジエ
チルアミノ)ベンゾフェノン0.69を加え、攪拌混合
後フィルターでろ過して感光性樹脂組成物を得た。この
組成物を実施例1と同様にして塗工し、80℃で30分
間加熱乾燥し透明な50μm厚の塗膜を得た。この塗膜
面をパターンマスクし300 mJ/cm2の紫外線照
射を行ない、実施例1と同様にして現像、リンスを行な
ったところ鮮明な樹脂パターンを得た。この樹脂パター
ンを塗膜を実施例IK記載の方法で熱重量分析を行なっ
たところ、10%重量重量減変温423℃と良好な耐熱
を示すものであった。The solution was stirred at room temperature for 8 hours to obtain a viscous polyimide precursor. Add 9L99 of tetraethylene glycol diacrylate (manufactured by Shin Nakamura Chemical Co., Ltd.) to this solution, add 5.49 L of benzophenone and 0.69 L of 4,4'-bis(diethylamino)benzophenone under light shielding, stir and mix, and filter through a filter. A photosensitive resin composition was obtained. This composition was coated in the same manner as in Example 1 and dried by heating at 80° C. for 30 minutes to obtain a transparent coating film with a thickness of 50 μm. This coated film surface was pattern masked and irradiated with ultraviolet rays at 300 mJ/cm 2 , and developed and rinsed in the same manner as in Example 1 to obtain a clear resin pattern. When the coating film of this resin pattern was subjected to thermogravimetric analysis using the method described in Example IK, it was found that the resin pattern showed good heat resistance, with a 10% weight loss in temperature change of 423°C.
Claims (1)
、R_2は2価の芳香族基、脂肪族基、脂環式基あるい
はオルガノシロキサン基である)で表わされる繰返し単
位を有するポリイミド前駆体、重合性不飽和化合物、光
重合開始剤および有機溶媒を含有する感光性樹脂組成物
より感光層を形成する工程 (2)感光層を活性光でイメージ的に露光する工程 および (3)アルカリ水溶液で現像する工程を含むことを特徴
とする画像の製法。[Claims] 1. (1) On the base material, there is a formula (1) ▲ mathematical formula, chemical formula, table, etc. ▼ (1) (in the formula, R_1 is a tetravalent aliphatic group or alicyclic group and R_2 is a divalent aromatic group, aliphatic group, alicyclic group, or organosiloxane group), a polymerizable unsaturated compound, a photopolymerization initiator, and an organic An image forming method comprising: (2) forming a photosensitive layer from a photosensitive resin composition containing a solvent; (2) imagewise exposing the photosensitive layer to actinic light; and (3) developing with an alkaline aqueous solution. Manufacturing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP707787A JPS63175854A (en) | 1987-01-14 | 1987-01-14 | Image producing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP707787A JPS63175854A (en) | 1987-01-14 | 1987-01-14 | Image producing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63175854A true JPS63175854A (en) | 1988-07-20 |
Family
ID=11656019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP707787A Pending JPS63175854A (en) | 1987-01-14 | 1987-01-14 | Image producing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63175854A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03204649A (en) * | 1989-12-28 | 1991-09-06 | Internatl Business Mach Corp <Ibm> | Photosensitive polyimide composite |
EP0453237A2 (en) * | 1990-04-16 | 1991-10-23 | Fujitsu Limited | Photosensitive, heat-resistant resin composition and pattern formation process |
US5429709A (en) * | 1993-04-28 | 1995-07-04 | Fujitsu Limited | Method of manufacturing polyimide multilayer printed wiring boards |
US6013419A (en) * | 1990-04-16 | 2000-01-11 | Fujitsu Limited | Process for using photosensitive, heat-resistant resin composition to form patterns |
-
1987
- 1987-01-14 JP JP707787A patent/JPS63175854A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03204649A (en) * | 1989-12-28 | 1991-09-06 | Internatl Business Mach Corp <Ibm> | Photosensitive polyimide composite |
EP0453237A2 (en) * | 1990-04-16 | 1991-10-23 | Fujitsu Limited | Photosensitive, heat-resistant resin composition and pattern formation process |
US6013419A (en) * | 1990-04-16 | 2000-01-11 | Fujitsu Limited | Process for using photosensitive, heat-resistant resin composition to form patterns |
US6045975A (en) * | 1990-04-16 | 2000-04-04 | Fujitsu Limited | Photosensitive, heat-resistant resin composition for forming patterns |
US5429709A (en) * | 1993-04-28 | 1995-07-04 | Fujitsu Limited | Method of manufacturing polyimide multilayer printed wiring boards |
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