JPS63168052U - - Google Patents
Info
- Publication number
- JPS63168052U JPS63168052U JP6026787U JP6026787U JPS63168052U JP S63168052 U JPS63168052 U JP S63168052U JP 6026787 U JP6026787 U JP 6026787U JP 6026787 U JP6026787 U JP 6026787U JP S63168052 U JPS63168052 U JP S63168052U
- Authority
- JP
- Japan
- Prior art keywords
- probe structure
- probe
- hole
- pipe
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Nozzles (AREA)
Description
第1図は本考案の一実施例を示す機械的構成断
面図、第2図は粉末溶射装置の従来構成を示す図
、第3図は第2図の改良例を示す図、第4図は従
来の誘導プラズマ発生装置の詳細構成を示す図、
第5図は粉末注入用プローブ構造の従来例を示す
図である。
20……プローブ、20a……穴、20b……
水入口、20c……水出口、21……パイプ、2
2……継手、23……ストツパ。
Fig. 1 is a sectional view of the mechanical structure of an embodiment of the present invention, Fig. 2 is a view showing the conventional structure of a powder spraying device, Fig. 3 is a view showing an improved example of Fig. 2, and Fig. 4 is a sectional view of the mechanical structure of an embodiment of the present invention. A diagram showing the detailed configuration of a conventional induced plasma generator,
FIG. 5 is a diagram showing a conventional example of a probe structure for powder injection. 20...probe, 20a...hole, 20b...
Water inlet, 20c...Water outlet, 21...Pipe, 2
2...Joint, 23...Stopper.
Claims (1)
あけ、該穴の中に粉末とキヤリヤガスを通すため
の、プローブの全長より若干短いパイプを挿入し
、該パイプはプローブ構造上部に配置したストツ
パで保持するように構成したことを特徴とする粉
末注入用プローブ構造。 A hole is drilled through the center of the water-cooled probe structure, and a pipe slightly shorter than the total length of the probe is inserted into the hole to pass the powder and carrier gas, and the pipe is held by a stopper placed on the top of the probe structure. A probe structure for powder injection, characterized in that it is configured to.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6026787U JPS63168052U (en) | 1987-04-20 | 1987-04-20 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6026787U JPS63168052U (en) | 1987-04-20 | 1987-04-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63168052U true JPS63168052U (en) | 1988-11-01 |
Family
ID=30892531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6026787U Pending JPS63168052U (en) | 1987-04-20 | 1987-04-20 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63168052U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7355202B2 (en) | 1990-05-29 | 2008-04-08 | Semiconductor Energy Co., Ltd. | Thin-film transistor |
US7507991B2 (en) | 1991-06-19 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and thin film transistor and method for forming the same |
US7642584B2 (en) | 1991-09-25 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
-
1987
- 1987-04-20 JP JP6026787U patent/JPS63168052U/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7355202B2 (en) | 1990-05-29 | 2008-04-08 | Semiconductor Energy Co., Ltd. | Thin-film transistor |
US7507991B2 (en) | 1991-06-19 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and thin film transistor and method for forming the same |
US7642584B2 (en) | 1991-09-25 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |