JPS63162861A - Thin film deposition device - Google Patents

Abstract

PURPOSE:To prevent exfoliation of a thin film stuck to a sample surface and to prevent generation of defects in the thin film, by forming the exposed surface in a device for sputtering a target which is one of electrodes and depositing the thin film on the substrate surface to a rough surface having adequate surface roughness. CONSTITUTION:The electrodes 22, 23 are disposed to confront each other in a vacuum vessel 21. The metallic target 24 is mounted onto one electrode 22 and a wafer 25 is imposed on a sample base of the other electrode 23. Gaseous Ar is introduced into the vessel 21 and the inside of the vessel is evacuated to about 0.3Torr pressure. About 500V voltage is impressed between the electrodes 22 and 23 by a power supply 26. Plasma is thereby formed and the Ar ions therein sputter the above-mentioned target 24, thus depositing the thin film on the surface of the wafer 25. A deposition preventive plate 27 made of Al is fixed onto the exposed surface of the above-mentioned vessel 21 and the surfaces thereof is formed to >=12.58 surface roughness. The exfoliation of the thin film stuck to the plate 27 surface is thereby obviated and the contamination in the vessel 21 is prevented.

Description

[Detailed description of the invention]

[Object of the Invention] (Industrial Field of Application) The present invention relates to the growth of m-pole materials for semi-organisms and rhinoceros, and particularly to the structure inside the 1tlfk formation chamber. (Conventional wave technology) In recent years, semiconductor T* integrated circuits have been steadily increasing in size.

[Structure of the invention]

(Means for solving the gap) In order to achieve the above object, the present invention roughens the surface of the inner wall of the device. (Function) With this configuration, the stress on the membrane can be alleviated and the hood can be prevented from becoming bent. (Actual control column) FIG. 2 shows a cross section of the sputtering fabrication of this embodiment. I! in the vacuum container 21 made by Ste/Less! ! 22 and 23 are provided, and a target 24 made of gold or silicide, for example, molybdenum silicide, is attached to one side. Both of these become Yingi. On the other hand, a sample (wafer) 25 is placed on a sample stage 23 which is an opposing anode. $
A gas such as HAr is introduced into 5, and the vf is pumped by a vacuum pump.
C pressure is applied. The sample stage 23 and container 21 are grounded, and the IL
A voltage of 5 oov was applied to the pole 22 by a source 26 . The pressure inside the container is Q, 3 Torr. Ions in the generated plasma are sputtered onto the target 24t and deposited on the sample. A removable adhesion prevention plate 27 made of aluminum is attached to the inner wall of the container and the electric ovens 22 and 23 with screws. FIG. 1 is a partially enlarged view of the adhesion prevention plate 27. The long side of the anti-adhesion plate is 12.5S~4008. For example, the surface roughness was set to 25S. S is a unit that indicates the depth of the surface according to the JIS standard, and 25S means that the difference between the high and low points of the roughened surface is 12
．． It shows that it is 5 μm. FIG. 3 shows a comparison between the present actual column (a) and the conventional column (b)' when molybdenum silicide is deposited. For ISO products in terms of surface roughness, as the number of sputtering increases and the thickness of the applied layer increases, 4 or more films will peel off. This becomes dust in the ttffl formation chamber and adheres to the substrate, causing defects. However, in the surface roughness unit of 25 Maekama, the number of dust particles of 0.3 μm or more did not change despite the increase in the number of sputtering operations. In addition to aluminum, stainless steel may be used for the adhesion prevention plate. As a result of investigation, a surface roughness of 12.5 S or more was found to be good for preventing /A galling. In this example, the surface of the anti-adhesion plate was roughened;
Even if there is no such thing, it is effective to roughen the inside of the container. In addition, molybdenum silicide ponds, high melting point metals such as molybdenum, tungsten, tungsten silicide, etc., or silicides thereof can be used as the adhering material. [Effects of the Invention] According to the present invention, peeling off of the adhered thin film 4 is prevented by providing irregularities on the surface of the adhesion prevention plate, etc., provided outside the predetermined portion of the electrode forming chamber. Therefore, the inside of the mastication forming chamber can be kept clean, and the olfaction with fewer defects can be formed.

[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining the present invention in detail, FIG. 42 is a diagram of a sputtering/guage A system, and FIG. 3 is a diagram for explaining the present invention in detail. Agent Patent Attorney Noriyuki Ken Yudo Takehana Kikuo 1st figure, Matsu 7 times 3rd, Ar ↓ 2nd figure

Claims (1)

[Claims] In a thin film deposition apparatus that applies a voltage to a counter electrode to sputter a metal target, which is one electrode, and deposits a metal film on the surface of a sample placed on a sample stage, which is the other electrode, the exposed surface inside the apparatus is 12. A thin film deposition apparatus characterized by having a rough surface of 5S or more.