JPS63158444A - Semiconductor sensor - Google Patents
Semiconductor sensorInfo
- Publication number
- JPS63158444A JPS63158444A JP30518786A JP30518786A JPS63158444A JP S63158444 A JPS63158444 A JP S63158444A JP 30518786 A JP30518786 A JP 30518786A JP 30518786 A JP30518786 A JP 30518786A JP S63158444 A JPS63158444 A JP S63158444A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cover body
- fet
- semiconductor sensor
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000005669 field effect Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 238000013022 venting Methods 0.000 abstract 1
- 239000012298 atmosphere Substances 0.000 description 6
- 239000003973 paint Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、例えば湿度あるいはガスなどの雰囲気を検出
する半導体検出素子を組込んでなる半導体センサ装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor sensor device incorporating a semiconductor detection element for detecting an atmosphere such as humidity or gas.
（従来の技術）
湿度あるいはガスなどの雰囲気検出素子としてＦＥＴ（
電界効果形トランジスタ）を応用したＦＥＴセンサが近
年開発されてきている。(Prior art) FET (
FET sensors using field effect transistors have been developed in recent years.
これらのＦＥＴセンサの構造は概略、ゲート絶縁膜上に
被検出物を検知するための検出体を設け。These FET sensors generally have a structure in which a detection body for detecting an object is provided on a gate insulating film.
さらにこの検出体上にゲート電極を具えた構造となって
おり、検出方式としては、被検出物と検出体が物理的、
或いは化学的反応を行い、この結果検出体のインピーダ
ンスが変化してＦＢＴ素子のゲート電位が変わることを
利用したものである。Furthermore, it has a structure in which a gate electrode is provided on the detection object, and the detection method is such that the detection object and the detection object are connected physically.
Alternatively, it utilizes the fact that a chemical reaction is performed, and as a result, the impedance of the detection object changes, which changes the gate potential of the FBT element.
ＦＥＴセンサ素子では小型化、複合化が容易になるため
、開発が盛んに行なわれているが、ＦＥＴセンサ素子を
収納するセンサ構造では、ｍ々問題が生じている。Although FET sensor elements are being actively developed because they can be easily miniaturized and integrated, a number of problems have arisen in sensor structures that accommodate FET sensor elements.
欠点の１つとして、ＦＥＴセンサ素子に設けられた検出
体は、特性的に高インピーダンスなものが要求されるが
、この結果ＦＥＴセンサ素子を電気的シールドなしに使
った場合、ノイズが発生して検出感度が悪くなることで
あった。この欠点を解消する方法としてＦＥＴ型湿度セ
ンサを通称ＴＯ５と呼ばれるカンに実装したものがある
。このＦＥＴ型湿度センサの断面図を第３図に示す。One of the drawbacks is that the detection object provided in the FET sensor element is required to have a characteristically high impedance, which results in the generation of noise when the FET sensor element is used without electrical shielding. This resulted in poor detection sensitivity. As a method to overcome this drawback, there is a method of mounting an FET type humidity sensor in a can, commonly called TO5. A cross-sectional view of this FET type humidity sensor is shown in FIG.
このセンサ装置は、センサ素子２０が金属性のキャン２
１に収納固定され、このキャン２１には絶縁体２２を介
してリード端子２３が設けられ、それぞれのリード端子
２３にはリード線２４でセンサ素子２０と接続している
。In this sensor device, the sensor element 20 is a metallic can 2.
This can 21 is provided with lead terminals 23 via an insulator 22, and each lead terminal 23 is connected to the sensor element 20 by a lead wire 24.
また、キャン２１の開口部には通気性のある金網２５が
覆設しである。この構造では、雰囲気センサとしては全
く不充分である。雰囲気がＦＢＴ素子面に平行に流れて
いる場合１％にガス検出においては、その濃度まで検出
しようとすると、検出出力に誤差が往々にして生じる欠
点があり、また汎用の雰囲気の有無を検出するセンサと
して用いる場合においても応答速度が遅くなる欠点があ
った。Further, the opening of the can 21 is covered with a wire mesh 25 having air permeability. This structure is completely inadequate as an atmosphere sensor. When the atmosphere is flowing parallel to the FBT element surface, gas detection has the disadvantage that errors often occur in the detection output when trying to detect up to 1% concentration, and general-purpose detection of the presence or absence of an atmosphere is difficult. Even when used as a sensor, the response speed is slow.
（発明が解決しようとする問題点）
本発明では以上の従来の問題点に鑑み為されたもので、
検出すべき雰囲気を遅れなく検知し、かつ検出精度が素
子構造による濃度分布、或いは大気中の電磁波によって
害されることなく正確に行なえる半導体センサ装置を提
供することを目的とする。(Problems to be solved by the invention) The present invention has been made in view of the above-mentioned conventional problems.
It is an object of the present invention to provide a semiconductor sensor device that can detect an atmosphere to be detected without delay and can accurately perform detection without being affected by concentration distribution due to element structure or electromagnetic waves in the atmosphere.
Ｃ問題点を解決するための手段）
ゲート電極とゲート絶縁膜の間に検出体を設けた構成よ
り成るＦＥＴ形半導体センサ素子を熱絶縁性の基板の一
方の面上に保持し、かつ該素子を保持した側に全体に亘
って通気孔を備えた覆体を設けかつ基板及び覆体が電気
的にＦＥＴのソース電極とそのリード端子に接続されて
いる構造の半導体センサ装置である。Means for Solving Problem C) An FET-type semiconductor sensor element having a configuration in which a detection body is provided between a gate electrode and a gate insulating film is held on one surface of a thermally insulating substrate, and the element is This semiconductor sensor device has a structure in which a cover is provided with a ventilation hole over the entire side on which the FET is held, and the substrate and the cover are electrically connected to the source electrode of the FET and its lead terminal.
（作用）
本発明に係わる半導体センサ装置は、ＦＥＴセンサ素子
が熱絶縁性基板上に添着配置され、その素子の周囲を覆
うように通気性のある導電性の覆体を設けているので、
高分子膜を有するセンサ素子の熱的弱点を考慮すること
なく、この装置を製造することができることと、センサ
素子が覆体によって電磁的に遮蔽されているために強い
外部雑音に対しても安定して動作する。(Function) In the semiconductor sensor device according to the present invention, the FET sensor element is attached and arranged on a thermally insulating substrate, and a conductive cover with air permeability is provided to cover the periphery of the element.
This device can be manufactured without considering the thermal weakness of the sensor element with a polymer film, and because the sensor element is electromagnetically shielded by the covering, it is stable even against strong external noise. and it works.
（実施例） 以下、本発明の実施例について詳細に説明する。(Example) Examples of the present invention will be described in detail below.
第１図は本発明による半導体センサ装置の全体の断面を
示す図である。ＦＥＴセンサ素子１は１０ｍφの樹脂よ
りなる円板状の絶縁基板２の表面に接着剤で固定されて
いる。基板２には必要数のリード端子３ａ、３ｂ、・・
・が植設されている。FIG. 1 is a diagram showing an entire cross section of a semiconductor sensor device according to the present invention. The FET sensor element 1 is fixed with adhesive to the surface of a disk-shaped insulating substrate 2 made of resin and having a diameter of 10 m. The board 2 has the required number of lead terminals 3a, 3b,...
・Has been planted.
また、基板２の裏面には電気導電性の膜体４が設けられ
ている。この導電性膜体４の形成には、この基板の裏面
に導伝性塗料を塗布し次いで乾燥させて固めた。この時
導伝性塗料は、ドレイン用ピン３ａ及びゲート用ピン３
ｂには接続しないように塗布し、ソース用ピン３Ｃには
接続してアースと接続できるようにしたつまた樹脂基板
２の側面部にも導伝性塗料を塗布して、覆体５と電気的
接続が容易に行えるようになっている。この接続は環状
の締付は具６で行なわれる。基板２上に固着したＦＥＴ
センサ素子１は第２図に示すようにＦＥＴ素子７上に高
抵抗の湿度検出体８を設けさらにその上に蒸着によりゲ
ート電極９を金で作成した。この後にソース１０．
ドレイン１１．及びゲート電極部１２と各々に対応する
リード端子３ａ、３ｂ、３Ｃとをリード線１３ａ、１３
ｂ。Furthermore, an electrically conductive film body 4 is provided on the back surface of the substrate 2. To form the conductive film 4, a conductive paint was applied to the back surface of the substrate, and then dried and solidified. At this time, the conductive paint is applied to the drain pin 3a and the gate pin 3.
A conductive paint is applied to the side surface of the resin substrate 2 so that it is not connected to the source pin 3C, and is connected to the source pin 3C so that it can be connected to the ground. connection can be easily made. This connection is made with an annular tightening tool 6. FET fixed on board 2
As shown in FIG. 2, the sensor element 1 includes a high-resistance humidity detector 8 provided on an FET element 7, and a gate electrode 9 made of gold by vapor deposition thereon. After this, source 10.
Drain 11. And the gate electrode portion 12 and the corresponding lead terminals 3a, 3b, 3C are connected to the lead wires 13a, 13.
b.
１３Ｃで接続した。次に１００メツシユのステンレスか
ら成るネットを絞って円筒状したものを覆体５として用
いた。この覆体５をアルミのバンド６で基板２にかしめ
て装着した。この時覆体５はかしめにより基板２の側面
と電気的に接続できリード端子３ａが接地されれば素子
１は電気的シールドが達つせられる。Connected with 13C. Next, a cylindrical net made of 100 mesh stainless steel was used as the cover 5. This cover 5 was attached to the substrate 2 by caulking it with an aluminum band 6. At this time, the cover 5 can be electrically connected to the side surface of the substrate 2 by caulking, and if the lead terminal 3a is grounded, the element 1 can be electrically shielded.
本発明によって得られる半導体センサ装置は、製造が容
易でしかも電磁的にシールドして使用できるので空間の
電磁ノイズに起因したノイズが高抵抗の感湿体には生じ
ず、検出精度が従来のものより格段に向上する。また感
湿体の面上に通気が容易な覆体を装着していることで、
被検出体を遅滞なく、正確な濃度を検出できる。The semiconductor sensor device obtained by the present invention is easy to manufacture and can be used with electromagnetic shielding, so noise caused by electromagnetic noise in the space does not occur in the high-resistance moisture sensitive element, and the detection accuracy is higher than that of conventional ones. Much improved. In addition, by installing a cover that allows easy ventilation on the surface of the moisture-sensitive element,
Accurate concentration of the target substance can be detected without delay.
第１図は本発明に係わる半導体センサ装置の構造の断面
図、第２図はその要部を示す断面図、第３図は従来装置
を示す断面図である。
１・・・半導体センサ素子、２・・・基板、３ａ、３ｂ
。
３Ｃ・・・リード端子、４・・・導電膜体、５・・・覆
体。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
第２図
第３図FIG. 1 is a sectional view of the structure of a semiconductor sensor device according to the present invention, FIG. 2 is a sectional view showing the main parts thereof, and FIG. 3 is a sectional view of a conventional device. DESCRIPTION OF SYMBOLS 1... Semiconductor sensor element, 2... Substrate, 3a, 3b
. 3C... Lead terminal, 4... Conductive film body, 5... Cover body. Agent Patent Attorney Noriyuki Chika Yudo Kikuo Takehana Figure 2 Figure 3
Claims (1)
縁基板と、この絶縁基板の表面の少なくとも半分以上の
面積を有して形成しかつ前記複数のリード端子の内の少
なくとも一つに電気的に接続してなる導伝性膜体と、こ
の導伝性膜体とは絶縁されて前記絶縁基板に設けてなり
かつソース電極、ドレイン電極およびゲート電極とを備
えてなる電界効果形トランジスタ構造を有し前記ゲート
電極に近接して設けた被検出物を検知するための高分子
検出体とで構成する半導体センサと、この半導体センサ
のソース電極と前記導電性膜体とを電気的に接続する接
続部と、この接続部と電気的に接続されかつ前記半導体
センサの外周囲を覆うように設けた通気性のある導電性
の覆い体とで構成したことを特徴とする半導体センサ装
置。A thermally insulating insulating substrate having a plurality of lead terminals embedded therein; and at least one of the plurality of lead terminals, the insulating substrate having an area of at least half or more of the surface of the insulating substrate. A field effect type device comprising: a conductive film body electrically connected to the conductive film body; and a source electrode, a drain electrode, and a gate electrode, the conductive film body being insulated from the conductive film body and provided on the insulating substrate. A semiconductor sensor has a transistor structure and includes a polymer detector for detecting an object provided close to the gate electrode, and the source electrode of this semiconductor sensor and the conductive film body are electrically connected. A semiconductor sensor device comprising: a connection portion connected to the semiconductor sensor; and an air-permeable conductive cover electrically connected to the connection portion and provided to cover the outer periphery of the semiconductor sensor. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30518786A JPS63158444A (en) | 1986-12-23 | 1986-12-23 | Semiconductor sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30518786A JPS63158444A (en) | 1986-12-23 | 1986-12-23 | Semiconductor sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63158444A true JPS63158444A (en) | 1988-07-01 |
Family
ID=17942100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30518786A Pending JPS63158444A (en) | 1986-12-23 | 1986-12-23 | Semiconductor sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63158444A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012517600A (en) * | 2009-02-12 | 2012-08-02 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Sensor element of gas sensor and method of operating the same |
-
1986
- 1986-12-23 JP JP30518786A patent/JPS63158444A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012517600A (en) * | 2009-02-12 | 2012-08-02 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Sensor element of gas sensor and method of operating the same |
| US8833141B2 (en) | 2009-02-12 | 2014-09-16 | Robert Bosch Gmbh | Sensor element of a gas sensor and method for operating the same |
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