JPS63144521A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To increase the energy saving, etching rate and filming speed by a method wherein a refrigeration cycle is made by connecting evaporators cooling a heat dissipation part of an etching device using gas as refrigerant or a filming device to a condenser heating a gas source while using a flon based refrigerant. CONSTITUTION:High electrolytic dissociation plasma is produced in an ion source chamber 16 containing etchant gas fed from a pipe 14 by microwave 12 from a waveguide 11 and a hollow core coil 13 to etch a specimen 19 into a specified pattern by accelerated ion 20 hitting the specimen 19. The ion source chamber 16 heated in operation and the hollow core coil 13 are provided with evaporators 22 while the pipe 14 flowing the etchant gas is provided with a condenser 23. A compressor 24, the condenser 23, a throttle valve 25 and the evaporators 22 are connected by a piping 26 to make a steam compression type refrigeration cycle using a flon based refrigerant. Through these procedures, the condenser 23 can heat the etchant gas with the calory of exhaust heat collected by the evaporators 22 plus the input of compressor 24 to save energy and resources making use of the exhaust heat. Through these procedures, the reaction speed can be accelerated to increase the etching rate.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to improvements in etching or film forming equipment used in semiconductor manufacturing.

Prior Art The prior art will be explained by taking the etching apparatus shown in FIG. 2 as an example. Highly ionized plasma is generated in the ion source chamber 4 where the etching gas flowing in the direction of the arrow 3 exists by the microwave introduced in the direction of the arrow 1 and the air core coil 2, and the sample held in the sample holder 6 of the etching chamber 6 is heated. Accelerated ions shown by arrow 8 collide with sample 7, etching the sample 7.

In such an apparatus, in order to radiate heat from the ion source chamber 4 and the air-core coil, a piping 1o for cooling water flowing in the direction of arrow 9 is provided, and the cooling water cools the heat radiating section.

Problems to be Solved by the Invention As mentioned above, in the past, since water was used as the cooling medium, there was a risk of electrical leakage if the pipe 1o was damaged, and the heated cooling water was not used in any way. It had been abandoned.

The present invention aims to solve these conventional drawbacks, eliminate the risk of electrical leakage, and effectively utilize waste heat.

Means for Solving the Problems The semiconductor manufacturing apparatus of the present invention connects an evaporator that cools the heat dissipation section of an etching or film forming apparatus using gas as a source and a condenser that heats the gas source, and uses a fluorocarbon-based refrigerant. This is a vapor compression refrigeration cycle using

Effect With such a configuration, taking an etching device as an example, a refrigerant pipe is provided in a heat dissipating part such as an ion source chamber or an air core coil to function as an evaporator, and the fluorocarbon refrigerant absorbs heat and evaporates, and this refrigerant gas is The compressor turns it into high-pressure, high-temperature gas, and the condenser heats the etching gas to liquefy it. therefore,
The exhaust heat inside the device is used to heat the gas source, accelerating the reaction rate of the etching gas and increasing the etching rate. Furthermore, since fluorocarbon refrigerants have high insulating properties, there is no risk of electrical leakage even if the piping is damaged.

Example An etching apparatus according to an embodiment of the present invention is shown in FIG.

Highly ionized plasma is generated in the ion source chamber 16 where the etching gas flowing in the direction of the arrow 15 from the tube 14 is present by the microwave introduced by the waveguide 11 in the direction of the arrow 12 and the air core coil 13.

The accelerated ions shown by the arrow 2o collide with the sample 19 held in the sample holder 18 of the etching chamber 17, etching the sample 19 into a set pattern. Evacuation is performed in the direction of arrow 21 by a vacuum pump (not shown).

Ion source chamber that generates heat during operation16. The air core coil 13 is provided with an evaporator 22, and a tube 1 through which etching gas flows.
4 is provided with a condenser 23.

And compressor 24. Condenser 23. A throttle valve 26° and an evaporator 22 are connected in an annular manner by a pipe 26 to constitute a vapor compression type refrigeration cycle using a fluorocarbon-based refrigerant.

In addition, 27 and 28 are switching valves, 29 is an air-cooled condenser,
30 is a fan operating device for the air-cooled condenser. ′! Fins 31 are provided on the outer periphery of the etching pipe 14 of the condenser 23.

Next, the functions and effects of such a configuration will be explained.

The fluorocarbon-based refrigerant that has absorbed the calorific value of the ion source chamber 16 and the air-core coil 13 in the evaporator 22 evaporates into gas, is converted into a high-pressure, high-temperature superheated gas in the compressor 24, and flows into the condenser 23. Here, the fluorocarbon-based refrigerant heats the etching gas, liquefies it, reduces its pressure with the throttle valve 25, and flows into the evaporator 22.

Due to this action, the etching gas can be heated in the condenser 23 using the amount of heat that is the sum of the exhaust heat from the equipment recovered by the evaporator 22 and the input from the compressor 24, making it possible to effectively utilize the exhaust heat and save energy. .

Resource saving is realized. By heating the etching gas, the reaction rate can be increased and the etching rate can be improved.

If it is desired to reduce the heating amount of the etching gas, the switching valve 27 may be closed and the switching valve 28 may be opened to bypass the fluorocarbon refrigerant to the air-cooled condenser 29 side.

Next, since the fluorocarbon-based refrigerant has high insulating properties, there is no risk of electrical leakage even if the refrigerant pipe 26 is damaged.

In the above explanation, an etching apparatus was used as an example, but even a film forming apparatus using gas as a source (e.g. CVN) has equipment waste heat, and heating the source gas can increase the film forming speed. It goes without saying that the device is effective.

Effects of the Invention The present invention connects an evaporator that cools the heat dissipation section of an etching or film forming apparatus using gas as a source and a condenser that heats the source gas, thereby configuring a compression type refrigeration cycle using a fluorocarbon-based refrigerant. Since it is a semiconductor manufacturing equipment, it is possible to effectively use the equipment's waste heat, saving energy and resources, and also improving the etching rate.

This can be achieved by increasing the film formation rate. Furthermore, effects such as eliminating the risk of electrical leakage when pipes are damaged can be obtained.

14... Etching gas piping, 16...
...Ion source room, 17...Etching room, 22
...Evaporator, 23 ...Condenser, 24.
...Compressor.

Name of agent: Patent attorney Toshio Nakao and 1 other person l4
- 112 points) Master 1 16 - Ikata 1 canter 17 - Etching 22 - Point-up winding figure 2

Claims (1)

[Claims] A semiconductor manufacturing device comprising a vapor compression refrigeration cycle using a fluorocarbon-based refrigerant by connecting an evaporator that cools the heat dissipation section of an etching or film forming apparatus using gas as a source and a condenser that heats the source gas.