JPS63138740A - Formation of pattern - Google Patents

Abstract

PURPOSE:To form a pattern, a working process of which is simplified and which has the high accuracy of finishing, by oppositely mounting a parallel electrode and a pattern electrode, fitting a substrate to the parallel electrode, applying voltage between the electrodes and conducting plasma polymerization in a heterogeneous electric field. CONSTITUTION:A substrate 1 is set up on the anode side of a parallel electrode 3 in an upper section, and the inside of a reaction tank 2 in which plasma polymerization is performed is evacuated. Irregularities 9 are shaped previously in conformity with the pattern shape of a plasma polymerizing film 8 formed on the substrate 1 as the shape of the surface of a pattern electrode 4 on the cathode side oppositely facing the parallel electrode 3 on the film formation side of the substrate 1. One kind or two kinds or more of monomer gases are introduced into the reaction tank 2 from a monomer gas intake 5, and the inside of the reaction tank 2 is balanced. Heterogeneous plasma is generated between the electrodes 3, 4 by using a high-frequency power 6, and the plasma polymerizing film 8 having the pattern shape is formed on the surface of the substrate 1. Accordingly, the pattern, a working process of which is slmplified and which has the high accuracy of finishing, can easily be shaped.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a pattern forming method, and particularly to a pattern forming method using a film forming method by plasma polymerization.

[Prior Art] Conventionally, as a pattern forming method, a pattern forming method using a resist is usually used.

Currently, pattern forming methods using resists include, for example,
This is done by the following method.

(1) Coat the substrate with resist.

(2) The original image for processing is transferred onto the resist film on the substrate using light, electron beam, X-ray, or ion beam.

(3) Develop the formed latent image with oxygen plasma.

(4) The substrate is eroded by halogen gas plasma through a window opened in the resist.

(5) The remaining resist is removed by ashing with oxygen plasma.

Through the above steps, the pattern is transferred onto the substrate surface.

Furthermore, the processing dimensions and processing speed by the above method are determined by the performance of the resist.

Generally, there are two types of resist films: positive and negative.The negative type has good adhesion or poor resolution.
For exposure to radiation such as electron beams, the adhesion is not sufficient, and positive types with good resolution are mainly used.

However, even in the case of a positive resist, if it is applied thicker than 1 μm, the resolution will decrease.

In addition, if the resist film is thin, pinholes will occur in the resist film, making it difficult to control the film thickness.Furthermore, as mentioned above, the adhesion is insufficient, so in wet etching, the etching solution will seep into the resist film, resulting in undercuts. This has the disadvantage that it is difficult to form fine patterns with high precision because of the intensity of the process.

The pattern forming method using resist has a large number of processing steps and is complicated, so the processing speed is slow.
Furthermore, there were problems in controllability and reliability of processing dimensions.

[Problems to be Solved by the Invention] The purpose of the present invention is to solve the above-mentioned drawbacks, and to form a pattern by plasma polymerization that has a simple processing process, easy control of processing dimensions, and high processing precision. The present invention provides a method.

[Means for Solving the Problems] In other words, one aspect of the present invention is to provide parallel electrodes and patterned electrodes whose surfaces are patterned with fine irregularities in a vacuum system, and to attach a substrate to the parallel electrodes. This is a pattern forming method characterized by forming a plasma polymerized film having a pattern shape on a substrate by applying a voltage between the electrodes and performing plasma polymerization in a non-uniform electric field.

Hereinafter, the present invention will be explained based on the drawings.

FIG. 1 is an explanatory diagram showing an example of a plasma polymerization apparatus used in the pattern forming method of the present invention. In the same Figure 1,
In the pattern forming method of the present invention, first, the substrate 1 is mounted on the anode side of the upper parallel electrode 3, and the inside of the reaction tank 2 in which plasma polymerization is to be performed is evacuated to I.times.10-'Torr.

The surface shape of the pattern electrode 4 on the cathode side opposite to the parallel electrode 3 on the film formation side of the substrate 1 is formed with unevenness 9 in accordance with the pattern shape of the plasma polymerization H8 formed on the substrate.

Next, the monomer gas is introduced into the reaction tank 2.

One or more types of plasma are introduced through the intake port 5 and kept in equilibrium. Next, a 13.56 MHz high frequency power source 6 is used between the electrodes 3 and 4 to generate a heterogeneous plasma, which is then deposited on the surface of the substrate l. A patterned plasma polymerized film 8 is formed.

The substrate l used in the present invention has its shape, size,
The material does not matter, but preferably a flat plate with a thickness of 5 cm or less,
Preferably, the surface is smooth.

Materials include glass, metal, and other materials with good plasma resistance.
Plastic etc. are preferable.

8 is a plasma polymerized film formed on a substrate l having a patterned shape according to the present invention.

Plasma-polymerized membranes are F& membranes produced by a polymerization method in which organic polymers are excited by collisions of molecules, ions, and electrons with high velocity energy in a low-temperature plasma state and become polymers. Formed on a substrate in a vacuum system maintained at low pressure.

Note that as the organic monomer for producing the plasma polymerized film used in the present invention, a wide range of organic compounds can be used without particular limitation, but for example,
The following compounds are suitable.

(1) Aliphatic saturated hydrocarbons such as methane, ethane, propane, butane, and heptane.

(2) Olefins such as ethylene, propylene, butene, butadiene, pentene, methylpentene, isoprene, and dimethylpentene.

(3) Aliphatic alkynes such as acetylene, propyne, butyne, and heptyne.

(4) Aromatic hydrocarbons such as toluene, benzene, xylene, ethylbenzene, and styrene.

(5) Oxygen-containing compounds such as methyl methacrylate, vinyl acetate, methyl vinyl ketone, and ethylene oxide.

(6) Vinyl chloride, vinylidene chloride, vinyl fluoride, vinylidene fluoride, 6-fluorinated propylene, tetrafluoroethylene, chlorotrifluoroethylene, trifluoroisopropyl methacrylate.

Halogenated hydrocarbons such as dichlorotetrafluoroethane and dichlorodifluoromethane (7) Tetramethylsilane, vinyltriethoxysilane, tetramethoxysilane, dimethyldimethoxysilane,
Silicon-based compounds such as hexamethyldisiloxane.

(8) Nitrogen-containing compounds such as methylamine, diallylamine, ethylenediamine, pyridine, pyrimidine, quinoline, 4-vinylpyridine, acetonitrile, and acrylonitrile.

(9) Tetramethyltin, tetramethylgermanium,
Organometallic compounds such as copper phthalocyanine.

Either one or more of these organic gases are introduced from the monomer gas intake port 5 in FIG. 1, or other inorganic gas species such as N2.02°H2, He, A
A plasma polymerized film can be produced by simultaneously introducing at least one type of organic monomer gas such as r.

In the present invention, the pattern with fine irregularities formed on the surface of the patterned electrode has the same shape as the pattern formed on the plasma polymerized film, and the desired shape can be adjusted depending on the purpose of use of the pattern. can be formed into

[Function] The pattern forming method of the present invention includes providing parallel electrodes and patterned electrodes whose surfaces are provided with fine irregularities to form a pattern in a vacuum system, and mounting a substrate on the parallel electrodes. Plasma polymerization is performed in a non-uniform electric field by applying a voltage between the electrodes, so the surface shape of the patterned electrode facing the parallel electrode plate has a fine uneven pattern in a vacuum system maintained at low pressure. Therefore, it is assumed that plasma is generated in an atmosphere with a non-uniform electric field, thereby forming a plasma polymerized film on the substrate with the same fine pattern shape as that formed on the patterned electrode. .

[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples.

Example 1 A glass substrate was attached to the upper parallel electrode on the opposite electrode surface side in a reaction tank of a vacuum device having opposite electrodes, and I
'Torr was exhausted.

Incidentally, an electrode was used in which a pattern of fine irregularities with a triangular base Ig was formed on the surface of the patterned electrode.

Next, tetramethylsilane monomer gas was introduced from the monomer gas intake port to 0.2 Torr, and after equilibration, plasma was generated in a heterogeneous electric field using RF 100 W for 90 minutes to form a plasma polymerized film. Ta.

After the polymerization was completed, the inside of the reaction tank was evacuated to I.times.10-'Torr, and after being left for 5 minutes, the pressure was returned to atmospheric pressure with Ar gas, and the substrate was taken out.

On the taken-out substrate, a plasma polymerized film was obtained that was colorless and transparent, had good adhesion, was free of pinholes, had good precision, and was patterned in the same shape as the pattern formed on the surface of the patterned electrode. .

Example 2 A polycarbonate (PC) substrate was attached to the upper parallel electrode on the side of the opposing electrode in a reaction tank of a vacuum apparatus having opposing electrodes, and the reaction vessel was evacuated to 10-'Torr.

The shape of the electrode on the opposing surface side of the lower patterned electrode was processed into a 40 am line drawing.

Next, add 0.2 methane gas from the monomer gas intake port.
Torr was introduced, the flow rate was set to 20 SCCM to achieve equilibrium, and then plasma was generated in a heterogeneous electric field using RF 70 W for 100 minutes to form a plasma polymerized film.

After the polymerization was completed, the inside of the reactor was evacuated to I.times.10-'' Torr, left for 5 minutes, returned to atmospheric pressure with Ar gas, and the substrate was taken out.

A plasma polymerized film that is colorless and transparent, has good adhesion, is free from pinholes, has good precision, and is patterned in the same shape as the pattern formed on the surface of the patterned electrode is obtained on the taken out substrate. Ta.

[Effects of the Invention] As explained above, the pattern forming method of the present invention uses a plasma polymerization method to easily form a pattern with a simple processing process, easy control of processing dimensions, and high processing accuracy. There are advantages to being able to do so.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing an example of a plasma polymerization apparatus used in the pattern forming method of the present invention. 1-... Substrate 2... Reaction tank 3... Parallel electrode 4... Pattern electrode 5... Monomer gas intake port 6... High frequency power source 7... Exhaust port 8... Plasma polymerized film

Claims (1)

[Claims] In a vacuum system, parallel electrodes and patterned electrodes with fine irregularities formed on the surface are provided facing each other, a substrate is attached to the parallel electrodes, and a voltage is applied between the electrodes to create a non-uniform pattern. A pattern forming method characterized by performing plasma polymerization in an electric field to form a plasma polymerized film having a pattern shape on a substrate.