JPS63132420A - Manufacture of semiconductor thin film - Google Patents
Manufacture of semiconductor thin filmInfo
- Publication number
- JPS63132420A JPS63132420A JP27820786A JP27820786A JPS63132420A JP S63132420 A JPS63132420 A JP S63132420A JP 27820786 A JP27820786 A JP 27820786A JP 27820786 A JP27820786 A JP 27820786A JP S63132420 A JPS63132420 A JP S63132420A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- annealing
- recrystallized
- semiconductor thin
- hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 11
- 150000004678 hydrides Chemical class 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 150000004820 halides Chemical class 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241001474791 Proboscis Species 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は、絶縁！１−板上の半導体月々をビームアニー
ルにより再結晶化するＳｏｌ技術に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to insulation! 1-Relates to the Sol technology for recrystallizing semiconductor particles on a plate by beam annealing.
Ｓ発明の概要〕
本発明は、絶縁基板上にＳｉ薄膜を堆積してビームアニ
ールにより再結晶化する工程において、５ｉｎＶ１１２
を堆積するだめの原料ガスとして、Ｓｉの水素化物とＳ
ｉのハ【］ゲン化吻とを使用することで、Ｓｉ薄膜中の
水素用を減少させて、容易にビームアニールできるよう
にするものである。Summary of the Invention] The present invention provides a step of depositing a Si thin film on an insulating substrate and recrystallizing it by beam annealing.
Si hydride and S
By using the halogenated proboscis of i, the amount of hydrogen in the Si thin film is reduced and beam annealing can be easily performed.
従来技術の例を第２図（ａ）、 （ｂｌで説明づ−る。 An example of the prior art is explained in FIGS. 2(a) and (bl).
第２図ｆａｌは、絶縁基板１」二にＳｉ薄膜２１を堆積
する工程である。原料ガスはＳｉの水素化物であるＳ
ｉ Ｉｔ ａなどを使用していたため、Ｓｉ￥ｉ膜２１
中に多量の水素が含まれている。第２図ｔｂ＋は、Ｓｉ
薄膜２１を工皐ルギービーム４で走査方向５の方向にア
ニールして、再結晶化する工程である。FIG. 2 fal shows a step of depositing a Si thin film 21 on the insulating substrate 1''. The raw material gas is S, which is a hydride of Si.
Since Si\i film 21 was used, etc.
It contains a large amount of hydrogen. Figure 2 tb+ is Si
This is a step of recrystallizing the thin film 21 by annealing it in the scanning direction 5 using the energy beam 4.
Ｓｉγ・Ｖ膜２１は膜中に多量の水素を含むため、ビー
ムアニール後の再結晶Ｓｉ薄膜３１は、ボイドが発生し
て、表面に大きな凹凸ができてしまう。この例は昭和６
１年春季応用物理学会予稿集３Ｐ−巳−３に示されてい
る。Since the Si γ·V film 21 contains a large amount of hydrogen, voids occur in the recrystallized Si thin film 31 after beam annealing, resulting in large irregularities on the surface. This example is from Showa 6.
It is shown in the 1st year spring proceedings of the Japan Society of Applied Physics, 3P-3.
Ｓ ｉ ｉ’＋ｖ膜２を堆積する際にＳｉの水素化物と
Ｓｉのハロゲン化物とを混合することにより、膜中の水
素を減少させることができる。By mixing Si hydride and Si halide when depositing the Si i'+v film 2, hydrogen in the film can be reduced.
Ｓｉ薄膜２の堆ｆ＋１時に、水素とハロゲンと（よ結合
して、膜中に残留することな（外部へ（ノド出される。When the Si thin film 2 is deposited (f+1), hydrogen and halogen are combined with each other and are ejected to the outside without remaining in the film.
以下図面によって本発明を説明する。第１図（ａ）。 The present invention will be explained below with reference to the drawings. Figure 1(a).
ｌｂｌは、本発明の実施例の工程を説明するための断面
図である。第１図（４）は絶縁基）反１上にＳｉ薄膜２
を堆積する工程である。絶縁基板１の例としては、石英
や無アルカリガラスやアルカリなどの不純物を含んだガ
ラスの表面に絶縁物をコートしてガラスからの不純物の
拡散を防止したものなどがある。lbl is a cross-sectional view for explaining the steps of the embodiment of the present invention. Figure 1 (4) shows the Si thin film 2 on the insulating base) 1.
This is the process of depositing. Examples of the insulating substrate 1 include quartz, alkali-free glass, glass containing impurities such as alkali, and the surface thereof coated with an insulating material to prevent diffusion of impurities from the glass.
Ｓｉ薄膜２は、原料として数多くの物質があり、＋Ｌ積
積法法各種のＣＶＤ法があるが、ここでは、５ｉｌ１４
． ＳｉＦｎ、ｌｌｚをおもな原料としたプラス−／
ＣＶＤ法によりａ−５ｉ＠堆積する方法について説明す
る。There are many materials for the Si thin film 2, including the +L product method and various CVD methods.
．． Plus using SiFn, llz as the main raw material-/
A method of depositing a-5i@ by the CVD method will be explained.
ＩＩＩ 、ｆ前温度は室温から４００℃の間に設定し、
各原ギー１ガスを混合して堆積することにより、５ｉｌ
１４ガス中の水素と５ｉＦｎガ；ζ中のフッ素とが結合
して排出されるため、水素などのガスの含まれないａ−
５ｉが堆積される。また膜厚は０．１μｍから０．５μ
ｍの間に設定ｒる。III, f pre-temperature was set between room temperature and 400°C,
By mixing and depositing 1 gas of each raw material, 5il
Hydrogen in 14 gas and 5iFn gas; fluorine in ζ combine and are discharged, so a-
5i is deposited. Also, the film thickness is from 0.1μm to 0.5μm.
Set between m.
第１図ｌｂｌは、Ｓｉ薄膜２をエネルギービーム４でア
ニールして再結晶Ｓｉ薄膜：３を製作する工程である。FIG. 1 lbl shows a process of annealing the Si thin film 2 with an energy beam 4 to produce a recrystallized Si thin film 3.
アニール方法にはレーザや電子ビームまたはランプやヒ
ータなどを用いた多数の方法があるが、ここではＡｒレ
ーザを使用して行う。Although there are many annealing methods using a laser, an electron beam, a lamp, a heater, etc., an Ar laser is used here.
−瓜にＳ ｉ Ｉｔ 、のみで堆積したａ−５ｉには多
量の水素が含まれているため、再結晶化のアニールの前
に水素ガスを除去するプレアニールが必要である。しか
しごこで、Ｓｉ薄膜２はほとんど膜中にガスが含まれな
いため、１回の再結晶アニールで平坦で結晶性の良い再
結晶Ｓｉ薄膜３ができる。- Since the a-5i deposited on the melon using only S i It contains a large amount of hydrogen, pre-annealing to remove hydrogen gas is required before recrystallization annealing. However, since the Si thin film 2 contains almost no gas, a flat recrystallized Si thin film 3 with good crystallinity can be formed by one recrystallization annealing.
この発明は、前述の実施例で説明したように、ビームア
ニールを行うＳ ｉ Ｆ−Ｖ ＩＫ！中に水素などのガ
スが含まれないため、プレアニールの工程なしに平坦な
再結晶化が可能となる。As explained in the above-mentioned embodiment, the present invention uses S i F-V IK! that performs beam annealing. Since it does not contain gas such as hydrogen, flat recrystallization is possible without a pre-annealing process.
第１図（ａｌ、 ｔｉｌｌは本発明の実施例の工程を説
明するための断面図である。第２図（ｉｉｌ、 ｌｂｌ
は従来の実施例の工程を説明するための断面図である。
１ ・ ・ ・ ・ Ｎ色縁基牟反
２．２１・・・Ｓｉｉ’ｉｌＪ膜
３．３１・・・再結晶Ｓｉ薄膜
４・・・・エネルギービーム
５・・・・走査方向
以」二
出願人 セイコー電子工業株式会社
不免明の震絶例の工程とホす吋面図
第１図
従来のＸ比例ｊのエフ４呈と示↑吋面図第２図Figure 1 (al, till is a sectional view for explaining the process of the embodiment of the present invention. Figure 2 (iil, lbl)
FIG. 2 is a cross-sectional view for explaining the steps of a conventional example. 1 ・ ・ ・ ・ N color edge substrate 2.21...Sii'ilJ film 3.31...Recrystallized Si thin film 4...Energy beam 5...Scanning direction 2 Applicants Seiko Electronics Industries Co., Ltd. Fumenaki's process and hosu front view Figure 1 shows the conventional X proportional j ↑ Back view Figure 2
Claims (2)
ｉのハロゲン化物とをおもな原料としたガスでＳｉ薄膜
を堆積する工程と前記Ｓｉ薄膜をビームアニールして再
結晶Ｓｉ薄膜とする工程とからなる半導体薄膜の製造方
法。(1) Si hydride and S
A method for producing a semiconductor thin film, comprising the steps of depositing a Si thin film using a gas containing a halide of i as a main raw material, and beam annealing the Si thin film to form a recrystallized Si thin film.
６、Ｓｉ＿３Ｈ＿８であり、前記Ｓｉのハロゲン化物が
ＳｉＨ＿４、Ｓｉｃｌ＿４、ＳｉＨｃｌ＿３、ＳｉＨ＿
２ｃｌ＿１、ＳｉＢｒ＿４、Ｓｉｌ＿４である特許請求
の範囲第１項記載の半導体薄膜の製造方法。（３）前記
Ｓｉ薄膜が非晶質Ｓｉ（ａ−Ｓｉ）または多結晶Ｓｉで
ある特許請求の範囲第１項記載の半導体薄膜の製造方法
。(2) The Si hydride is SiH_4, Si_2H_
6, Si_3H_8, and the halides of Si are SiH_4, Sicl_4, SiHcl_3, SiH_
2cl_1, SiBr_4, and Sil_4, the method for manufacturing a semiconductor thin film according to claim 1. (3) The method for manufacturing a semiconductor thin film according to claim 1, wherein the Si thin film is amorphous Si (a-Si) or polycrystalline Si.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61278207A JP2704403B2 (en) | 1986-11-21 | 1986-11-21 | Semiconductor thin film manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61278207A JP2704403B2 (en) | 1986-11-21 | 1986-11-21 | Semiconductor thin film manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63132420A true JPS63132420A (en) | 1988-06-04 |
| JP2704403B2 JP2704403B2 (en) | 1998-01-26 |
Family
ID=17594087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61278207A Expired - Lifetime JP2704403B2 (en) | 1986-11-21 | 1986-11-21 | Semiconductor thin film manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2704403B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0228313A (en) * | 1988-07-18 | 1990-01-30 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming polycrystal silicon film |
| US6706321B2 (en) * | 2000-06-13 | 2004-03-16 | Tokyo Electron Limited | Developing treatment method and developing treatment unit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947630A (en) * | 1972-06-05 | 1974-05-08 | ||
| JPS57138129A (en) * | 1981-02-19 | 1982-08-26 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous thin-film |
-
1986
- 1986-11-21 JP JP61278207A patent/JP2704403B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947630A (en) * | 1972-06-05 | 1974-05-08 | ||
| JPS57138129A (en) * | 1981-02-19 | 1982-08-26 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous thin-film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0228313A (en) * | 1988-07-18 | 1990-01-30 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming polycrystal silicon film |
| US6706321B2 (en) * | 2000-06-13 | 2004-03-16 | Tokyo Electron Limited | Developing treatment method and developing treatment unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2704403B2 (en) | 1998-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |