[go: up one dir, main page]

JPS63131515A - Aligner - Google Patents

Aligner

Info

Publication number
JPS63131515A
JPS63131515A JP61278065A JP27806586A JPS63131515A JP S63131515 A JPS63131515 A JP S63131515A JP 61278065 A JP61278065 A JP 61278065A JP 27806586 A JP27806586 A JP 27806586A JP S63131515 A JPS63131515 A JP S63131515A
Authority
JP
Japan
Prior art keywords
photomask
sample
lens group
source
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61278065A
Other languages
Japanese (ja)
Inventor
Taiji Hiraga
平賀 泰司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61278065A priority Critical patent/JPS63131515A/en
Publication of JPS63131515A publication Critical patent/JPS63131515A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To largely improve the accuracy of a pattern to be transferred to the surface of a sample by moving an illumination source and a lens group to expose the sample of large type of rectangular shape with the lens group of small size having excellent distortion rate, etc. CONSTITUTION:After the position of a photomask 3 and a sample 1 are matched in a microscope, etc., an ultraviolet ray (a) is irradiated from an irradiation source 4, and a lens group 2 and the source 4 are moved by a driving mechanism 5 from one end of the photomask 3 to the other end in a direction (b). In this case, the irradiated ultraviolet ray (a) is passed through the photomask 3, an optical path is corrected by the group 2, the pattern of the photomask 3 is focused on the sample 1 and transferred. An exposure amount is controlled by the moving velocity of the group 2 and the source 4. Accordingly, when a photoresist is thick, the moving velocity is decelerated, while when, on the contrary, thin, the velocity is accelerated to obtain an optimum exposure amount.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電子部品のフォトリソグラフィの工程で用いら
れている露光装置、特にフォトマスクと試料とを離して
配置し、そのフォトマスクと試料との間にレンズ郡を設
けた露光装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an exposure apparatus used in a photolithography process for electronic components, and in particular, to an exposure apparatus in which a photomask and a sample are placed apart from each other. The present invention relates to an exposure apparatus in which a group of lenses is provided between the lenses.

〔従来の技術〕[Conventional technology]

従来、この種の露光装置は第3図に示すようにフォトレ
ジストが塗布された試料1.該試料1に転写すべきパタ
ーンが描かれたフォトマスク3゜紫外線の照射源4.フ
ォトマスク上のパターンを試料表面に結像させるレンズ
群2の全てを固定して、試料1の全域を一度に露光して
おり、大型の試料を露光する場合には当然のことながら
使用するレンズも大型なものになっていた。
Conventionally, this type of exposure apparatus has been used to scan a sample 1. coated with photoresist as shown in FIG. 3. A photomask on which a pattern to be transferred to the sample 1 is drawn; 4. A source of ultraviolet rays; Lens group 2, which images the pattern on the photomask onto the sample surface, is all fixed and the entire area of sample 1 is exposed at once, and this lens is naturally used when exposing a large sample. It was also large.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した露光装置は大口径のレンズを用いていたために
レンズの歪率が大きくなり、その結果試料表面に転写さ
れるパターンの精度が著しく低下するという欠点がある
Since the above-mentioned exposure apparatus uses a large-diameter lens, the distortion rate of the lens becomes large, and as a result, the accuracy of the pattern transferred to the sample surface is significantly reduced, which is a drawback.

本発明の目的は試料表面に転写されるパターンの精度を
向上する露光装置を提供することにある。
An object of the present invention is to provide an exposure apparatus that improves the accuracy of a pattern transferred onto a sample surface.

〔発明の従来技術に対する相違点〕[Differences between the invention and the prior art]

上述した従来の大型のレンズを用いた一括露光方法を用
いた露光装置に対し、本発明は容易に製作できる性能の
良い小型のレンズを用いたレンズ群と紫外線の照射源と
を移動させて試料の全域を露光するという独創的内容を
有する。
In contrast to the above-mentioned conventional exposure apparatus that uses a batch exposure method using large lenses, the present invention uses small, easily manufactured lenses with good performance, and moves a lens group and an ultraviolet irradiation source to expose the sample. It has an original content of exposing the entire area.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は数μm〜十数μmの厚さのフォトレジストを表
面に形成した矩形状の試料と、透明な硝子板又はプラス
チックフィルムの一面に該試料に転写すべきパターンを
形成したフォトマスクと、該試料と該フォトマスクとの
間に位置し、該フォトマスクのパターンを該試料表面に
結像させるレンズ群と、水銀灯、キセノンランプ等の光
源と、該光源からの光を平行にするレンズとを内部に備
え、その光を該フォトマスク、該レンズ郡を通して試料
に照射する照射源と、該照射源と該レンズ群とをフォト
マスク表面に平行に移動させる駆動機構とを備えたこと
を特徴とする露光装置である。
The present invention includes a rectangular sample on which a photoresist with a thickness of several μm to more than 10 μm is formed, a photomask with a pattern to be transferred to the sample formed on one side of a transparent glass plate or plastic film, a lens group located between the sample and the photomask and for forming an image of the pattern of the photomask on the sample surface; a light source such as a mercury lamp or a xenon lamp; and a lens for collimating the light from the light source. , an irradiation source that irradiates the sample with the light through the photomask and the lens group, and a drive mechanism that moves the irradiation source and the lens group parallel to the surface of the photomask. This is an exposure device with

〔実施例〕〔Example〕

次に、本発明の一実施例について図面を参照して説明す
る。
Next, an embodiment of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例の外観図であり、第2図は本
発明の特徴である試料、レンズ群、フォトマスク、照射
源の位置を示す図である。
FIG. 1 is an external view of one embodiment of the present invention, and FIG. 2 is a diagram showing the positions of a sample, a lens group, a photomask, and an irradiation source, which are features of the present invention.

表面に数p〜士数μの厚さのフォトレジストが塗布され
た試料1の上方には該試料1に転写すべきパターンが形
成されたフォトマスク3があり、該試料1と該フォトマ
スク3との間には、該フォトマスク3のパターンを試料
1表面で結像する位置にレンズ群2が取付けられている
。又、フォトマスク3の上方には、内部に水銀灯、キセ
ノンランプ等の光源及び該光源からの光を平行にするレ
ンズとを備えた紫外線の照射源4が有り、この照射源4
は前述のレンズ群2と固定されている。
A photomask 3 on which a pattern to be transferred to the sample 1 is formed is located above the sample 1 whose surface is coated with a photoresist with a thickness of several micrometers to several micrometers. A lens group 2 is attached between the photomask 3 and the photomask 3 at a position where the pattern of the photomask 3 is imaged on the surface of the sample 1. Further, above the photomask 3, there is an ultraviolet irradiation source 4 equipped with a light source such as a mercury lamp or a xenon lamp, and a lens that parallelizes the light from the light source.
is fixed to the lens group 2 mentioned above.

このレンズ群2と照射源4は下部に設けられた駆動機構
5によってフォトマスク3の面に平行に移動する構造に
なっている。
The lens group 2 and the irradiation source 4 are configured to be moved parallel to the surface of the photomask 3 by a drive mechanism 5 provided at the bottom.

実施例において、照射源4をフォトマスク3の端面より
外側に移動させておいてから、フォトマスク3と試料1
との位置を顕微鏡等で合せた後。
In the embodiment, after moving the irradiation source 4 to the outside of the end face of the photomask 3, the photomask 3 and the sample 1 are
After aligning the position with a microscope etc.

照射源4から紫外線aを照射すると共に駆動機構5によ
ってレンズ群2と照射源4とをフォトマスク3の一端か
ら他端に向けてb方向に移動させる。
Ultraviolet rays a are irradiated from the irradiation source 4, and the lens group 2 and the irradiation source 4 are moved by the drive mechanism 5 in the direction b from one end of the photomask 3 to the other end.

この際、照射された紫外線aはフォトマスク3を通過し
、レンズ群2で光路を修正された後、試料1の表面でフ
ォトマスク3のパターンを結像して該パターンを転写し
て行く。
At this time, the irradiated ultraviolet rays a pass through the photomask 3, and after the optical path is corrected by the lens group 2, the pattern of the photomask 3 is imaged on the surface of the sample 1 and the pattern is transferred.

又露光量の制御はレンズ群2と照射源4の移動速度で行
う。従って、フォトレジストが厚い場合には移動速度を
遅くし、逆に薄い場合には移動速度を速くすることで最
適な露光量を得ることができる。
Further, the exposure amount is controlled by the moving speed of the lens group 2 and the irradiation source 4. Therefore, when the photoresist is thick, the moving speed is slowed down, and when the photoresist is thin, the moving speed is increased to obtain the optimum exposure amount.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は照射源とレンズ郡を移動さ
せることにより、歪率等の優れた小型のレンズ群で、矩
形状の大型の試料を露光でき、結果としてレンズ群の性
能に起因する解像度を著しく向上できる効果を有するも
のである。
As explained above, in the present invention, by moving the irradiation source and the lens group, a large rectangular sample can be exposed with a small lens group with excellent distortion rate, etc., and as a result, the performance of the lens group is improved. This has the effect of significantly improving resolution.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の露光装置の外観図、第2図は第1図の
試料、レンズ群、フォトマスク、照射源の位置関係を示
す図、第3図は従来の露光装置の外観図である。 1・・・試料        2・・・レンズ群3・・
・フォトマスク    4・・・照射源5・・・駆動機
Fig. 1 is an external view of the exposure apparatus of the present invention, Fig. 2 is a view showing the positional relationship of the sample, lens group, photomask, and irradiation source in Fig. 1, and Fig. 3 is an external view of the conventional exposure apparatus. be. 1... Sample 2... Lens group 3...
・Photomask 4...Irradiation source 5...Drive mechanism

Claims (1)

【特許請求の範囲】[Claims] (1)数μm〜十数μmの厚さのフォトレジストを表面
に形成した矩形状の試料と、透明な硝子板又はプラスチ
ックフィルムの一面に該試料に転写すべきパターンを形
成したフォトマスクと、該試料と該フォトマスクとの間
に位置し、該フォトマスクのパターンを該試料表面に結
像させるレンズ群と、水銀灯、キセノンランプ等の光源
と、該光源からの光を平行にするレンズとを内部に備え
、その光を該フォトマスク、該レンズ郡を通して試料に
照射する照射源と、該照射源と該レンズ群とをフォトマ
スク表面に平行に移動させる駆動機構とを備えたことを
特徴とする露光装置。
(1) A rectangular sample with a photoresist with a thickness of several μm to more than 10 μm formed on its surface, and a photomask with a pattern to be transferred to the sample formed on one side of a transparent glass plate or plastic film; a lens group located between the sample and the photomask and for forming an image of the pattern of the photomask on the sample surface; a light source such as a mercury lamp or a xenon lamp; and a lens for collimating the light from the light source. , an irradiation source that irradiates the sample with the light through the photomask and the lens group, and a drive mechanism that moves the irradiation source and the lens group parallel to the surface of the photomask. Exposure equipment.
JP61278065A 1986-11-21 1986-11-21 Aligner Pending JPS63131515A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61278065A JPS63131515A (en) 1986-11-21 1986-11-21 Aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61278065A JPS63131515A (en) 1986-11-21 1986-11-21 Aligner

Publications (1)

Publication Number Publication Date
JPS63131515A true JPS63131515A (en) 1988-06-03

Family

ID=17592162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61278065A Pending JPS63131515A (en) 1986-11-21 1986-11-21 Aligner

Country Status (1)

Country Link
JP (1) JPS63131515A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008283196A (en) * 2007-05-14 2008-11-20 Erich Thallner Device for transferring structure provided in mask onto substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008283196A (en) * 2007-05-14 2008-11-20 Erich Thallner Device for transferring structure provided in mask onto substrate
JP2013219381A (en) * 2007-05-14 2013-10-24 Erich Thallner Device for transferring structure provided in mask onto substrate

Similar Documents

Publication Publication Date Title
JP5224341B2 (en) Exposure apparatus and photomask
JPH0429212B2 (en)
GB1412995A (en) Apparatus for and method of correcting a defective photomask
TW201333638A (en) Substrate processing device, device manufacturing system and device manufacturing method
TW201027268A (en) Exposure apparatus and photomask
JP2001297975A (en) Aligner and method of exposure
JP4146673B2 (en) Exposure method and apparatus
WO2019169733A1 (en) Maskless photoetching system and exposure method thereof
JPH0917718A (en) Aligner and device, and manufacturing method using it
US3794421A (en) Projected image viewing device
JPS63131515A (en) Aligner
US6195155B1 (en) Scanning type exposure method
JP2002072497A (en) Exposure method
JP2656204B2 (en) Mask changing equipment
JP2008139761A (en) Exposure method and exposure device
JPS6083019A (en) Pattern reflection projection exposure method
JPH0154854B2 (en)
JPH0142129B2 (en)
JPH0527413A (en) Photomask for exposing device
JPH0272365A (en) photo processing equipment
JPH02192710A (en) Lithography device
JPH027046B2 (en)
JPH04104255A (en) Reduction stepper
JPH09180991A (en) Aligner
SU574413A1 (en) Method of manufacturing large-size articles from light-sensitive glass