JPS63131150U - - Google Patents
Info
- Publication number
- JPS63131150U JPS63131150U JP2300787U JP2300787U JPS63131150U JP S63131150 U JPS63131150 U JP S63131150U JP 2300787 U JP2300787 U JP 2300787U JP 2300787 U JP2300787 U JP 2300787U JP S63131150 U JPS63131150 U JP S63131150U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- emitter
- carrier injection
- injection blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図及び第２図は夫々本考案を説明するため
の断面図及び平面図、第３図及び第４図は夫々従
来例を説明するための断面図及び平面図である。
２１はＰ型半導体基板、２５は島領域、２６は
エミツタ領域、２７はコレクタ領域、２８はベー
スコンタクト領域、３１はエミツタ電極、３４は
キヤリア注入阻止領域である。
1 and 2 are a sectional view and a plan view, respectively, for explaining the present invention, and FIGS. 3 and 4 are a sectional view and a plan view, respectively, for explaining a conventional example. 21 is a P-type semiconductor substrate, 25 is an island region, 26 is an emitter region, 27 is a collector region, 28 is a base contact region, 31 is an emitter electrode, and 34 is a carrier injection blocking region.
Claims (1)
のエミツタ領域と、このエミツタ領域の表面に形
成した逆導電型のキヤリア注入阻止領域と、前記
エミツタ領域を囲むように前記島領域表面に形成
した一導電型のコレクタ領域と、前記島領域表面
を覆う絶縁膜と、該絶縁膜を開孔したコンタクト
ホールを介して前記エミツタ領域と前記キヤリア
注入阻止領域の両者にオーミツクコンタクトする
エミツタ電極と、前記コレクタ領域にオーミツク
コンタクトするコレクタ電極とを具備することを
特徴とするラテラルトランジスタ。 an emitter region of one conductivity type formed on the surface of the island region serving as a base; a carrier injection blocking region of the opposite conductivity type formed on the surface of the emitter region; and a carrier injection blocking region of the opposite conductivity type formed on the surface of the island region so as to surround the emitter region. a collector region of one conductivity type, an insulating film covering the surface of the island region, and an emitter electrode in ohmic contact with both the emitter region and the carrier injection blocking region through a contact hole formed in the insulating film; A lateral transistor comprising a collector electrode in ohmic contact with the collector region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2300787U JPS63131150U (en) | 1987-02-19 | 1987-02-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2300787U JPS63131150U (en) | 1987-02-19 | 1987-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63131150U true JPS63131150U (en) | 1988-08-26 |
Family
ID=30820929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2300787U Pending JPS63131150U (en) | 1987-02-19 | 1987-02-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63131150U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6116569A (en) * | 1984-07-03 | 1986-01-24 | Matsushita Electronics Corp | Semiconductor integrated circuit device |
-
1987
- 1987-02-19 JP JP2300787U patent/JPS63131150U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6116569A (en) * | 1984-07-03 | 1986-01-24 | Matsushita Electronics Corp | Semiconductor integrated circuit device |
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