JPS63127209A - Optical axis aligning device - Google Patents

Abstract

PURPOSE:To easily and quickly align the optical axis of a semiconductor PN junction element to that of an optical waveguide without damaging by moving the semiconductor PN junction element by probe opening/closing mechanisms to align the optical axis. CONSTITUTION:Movement of a PN junction element 1 is controlled through a heat sink 23 by probe opening/closing mechanisms 42 and 42' consisting of conductive materials and is controlled by a probe opening/closing mechanism 43 which is orthogonal to mechanisms 42 and 42' and consists of a conductive material. Optical axes of the element 1 and optical waveguide 16 and 16' are aligned if laser beam from optical waveguides 16 and 16' of an optical module are made incident and the element 1 is positioned so that the indicated value of a selecting level meter 15 between probes 41 and 40 connected to mechanisms 43 and 42 is maximum, and in this state, the optical module which fixes the heat sink 23 and a waveguide 18 is generated. By this optional axis alignment free from thermal and mechanical stress, the optical axis of the semiconductor PN junction element is easily and quickly aligned to that of the optical waveguide without damage.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for disposing a semiconductor PN junction element on a mount, and disposing an active layer of the semiconductor PN junction element on the upper side of the mount, facing the semiconductor PN junction element. This invention relates to an optical axis alignment device for aligning and fixing the optical axis of a semiconductor PN junction element and an optical waveguide in a small hybrid optical module in which one or a pair of optical waveguides or lens systems are arranged and optically coupled to the semiconductor PN junction element and the optical waveguide. It is something.

[Prior art] Optical axis alignment of conventional optical modules was conducted in accordance with Japanese Patent Publication No. 60-2611.
There is a description in Publication No. 86. This will be explained using the diagram in FIG. 5 and the partially enlarged sectional view of the optical module in FIG. 6.

1 is a semiconductor PN junction element, which is placed at the center of the optical module.

Further, 13 and 14 indicate laser diodes (LD) 7° and 7'' as light sources at frequencies f1 and f, respectively.
This is a driver for modulating with l.

Reference numeral 15 denotes a selection level meter that detects RF power in tune with f and fl, and measures the human power level by tuning independently with signals of frequencies f and fl from drivers 13 and 14. It has become.

16 and 16' are cores forming optical waveguides for the optical fibers 4 and 4° predecessor output, respectively.

Further, 17 indicates a lead wire connected to this semiconductor PN junction element 1, and 18 indicates a conductive layer for a terminal made of an Au plating layer or the like. And the optical waveguide 16.1
6' is cut out to the conductive layer 18, as shown in FIG.

The operation of optical axis alignment using the above-described configuration will be described below.

A semiconductor PN junction element 1 is previously installed on the heat sink 23, and both end surfaces of the semiconductor PN junction element 1 are opposed to the optical waveguide (core) 16, 16'.

Next, the crat layer 22 of the optical fiber 4 is used as an upper electrode,
The lead wire 17 is connected here, and the conductive layer 18 which is in a conductive state by the brazing agent 24 is used as the lower electrode, and the voltage between the upper and lower electrodes is measured by the level meter 15.
and measure the voltage levels at frequencies f+ and fl. For this purpose, the selection level meter 15 is tuned to the frequencies f and fl by the signals from the drivers 13 and 14, and in that state, the lights -fi7° and 7'' are modulated at the frequencies f and fl, respectively. Optical signals modulated at different frequencies f1 and fl are injected from the optical waveguides 16, 16' into the active layer of the semiconductor PN junction element 1.

Here, since the selection level meter 15 can be tuned independently to fl and fl, the optical axes can be aligned separately on the incident side and the output side.

Therefore, the semiconductor PN junction element 1 is set at an optimal position with the soldering agent 23 melted, and the soldering agent 24 is cooled at that position to fix the heat sink 23 and the semiconductor PN junction element 1, thereby forming an optical module. .

[Problems to be Solved by the Invention] As described above, in the conventional optical axis alignment, the terminal voltage change of the +Tif semiconductor PN junction element 1 caused by the optical signals modulated at the frequencies f1 and fl is From the cladding layer 22 as a pole, from the REET wire 17 part,
Further, from the conductive path 18 serving as the lower electrode, detection is made from the portion of the brazing agent 24 in a molten state.

However, such conventional methods have the following drawbacks.

1) For the above optical axis alignment, the lead wire 17 is connected to the crut layer 2.
2 and the single conductor PN bonding element 1, and stress is applied to the lead wire 17, which impairs the reliability of the bonding of the lead wire 17. Furthermore, when handling the heat sink 23 during assembly, this sorting wire 17 prevents the handling from being performed freely. Furthermore, the heat sink 23 of the semiconductor PN junction element 1 is fixed with the brazing agent 24. 1) With η, the LEET wire! 7 or 1 When in the stretched state as described above, the surface of the active layer of this t-conductor PN junction element l or another object, such as the core 16.16° of an optical waveguide.
However, this is difficult and there is a great risk of damage to the recreational conductor PN junction element f1.

2) Next, the brazing agent 24 that fixes between the conductive layer 18 and the heat sink 23 must be in a molten state when the optical axis of the semiconductor PN junction element 1 is aligned. In other words, the temperature of the soldering agent 24 is higher than the melting point temperature of the soldering agent 24, and the melting point temperature of the soldering agent 24 is higher than that of the heat sink 24, which has good thermal conductivity.
3 and is transmitted to the semiconductor PN junction element l. This has the problem of deteriorating the performance of the semiconductor PN junction element 1.

At the same time, heat is also conducted to the conductive layer 18 and the optical waveguide 16, 16' portion, so that these four layers and the optical waveguide 16, 16' have a linear expansion coefficient and a heating temperature of each material 71. temporarily deformed.

Therefore, after the brazing agent 24 is cooled, there is a problem in that the optical axis is misaligned between the optical waveguide 16.16° and the semiconductor PN junction element 1.

This problem can be solved by aligning the optical axes in a short time, but according to the conventional method, it takes several minutes to align the optical axes, which is not easy to solve and has poor work efficiency. Ta.

[Object of the Invention] The present invention has been made to solve these drawbacks, and provides a method for easily and quickly aligning the optical axis of a semiconductor PN junction element with an optical waveguide while preventing damage due to heat or scratches. The aim is to improve the work efficiency of creating optical modules.

[Means for solving the problems] In order to achieve the above-mentioned object, the optical axis alignment device of the present invention has the following features:
A semiconductor PN junction element (1) disposed on a substrate, and one or a pair of optical waveguides (16, 16') optically connected to the active layer of the semiconductor PN junction element (1) on the substrate. In the optical axis alignment device of the optical module to be coupled, the semiconductor P
An optical waveguide (16, 16') is provided in the active layer of the N-junction element (1).
); ii; (a pair of probes (40, 41) for detecting the voltage generated between the terminals of the conductor PN junction element (1); The pair of probes (40, 41) are connected to the semiconductor PN junction element r
- (1) and the semiconductor PN junction element (
1) Probe opening/closing mechanism (42, 42',
43) and: A probe moving mechanism for aligning the optical axis by moving the semiconductor PN junction element (1) held between the probe opening/closing mechanisms (42, 42', 43).

[Function] To explain the function of the above-mentioned configuration, the lower heat sink 23 of the conductor PN junction element 1 is held at both ends thereof by the prong opening/closing mechanism 42, 42°. The probe opening/closing mechanism 42, 42' is connected to the probe 40 on the side (①).

Further, the semiconductor PN junction element 1 has the other probe 41
are brought into contact by the opening/closing mechanism 43.

These probe opening/closing mechanisms 42, 42', and 43 are movable in the x, y, and z directions as well as in the α and θ directions by the probe moving mechanism, and this movement causes the semiconductor PN junction element l and the optical waveguide 16, 16' to One bite is possible.

After that, the heat sink 23 is bonded to the conductive layer 1 using the brazing agent 24.
8, an optical module can be formed.

Therefore, optical axis alignment can be performed easily and quickly, and the work of fixing the semiconductor PN junction element 1 with the brazing agent 23 and stretching the lead wire 17 can be done in a short time in the next process, which improves the performance of the optical module. (6) Reliability and work efficiency for creating optical modules can be improved.

[Example] Hereinafter, one embodiment of the present invention will be described based on the drawings.

FIG. 1 is a schematic view showing the optical axis alignment device of the present invention, and FIG. 2 is a partially enlarged sectional view of the optical module.

FIG. 3 is a perspective view of the device, and FIG. 4 is a sectional view of the device.

In these parts 1, the same names and numerals are given to the same structures and parts as in the conventional optical axis alignment, and the explanation thereof will be omitted.

In addition, probe opening/closing mechanisms 42 and 42' that can freely hold the heat sink 23 are provided at both ends of the conductive layer 18, and a probe that can directly contact the semiconductor PN junction element 1 is provided above the semiconductor PN junction element 1. An opening/closing mechanism 43 is provided with an electrically insulating layer 46 interposed therebetween.

At least one side of the probe opening/closing mechanism 42 , 42 ′ is made of a conductive material, serves as one of the probes 40 , and is electrically connected to the selection level meter 15 .

Further, the probe opening/closing mechanism 43 is also made of a conductive material,
It also functions as the other probe 41 and is electrically connected to the selection level meter 15.

FIG. 3 is a perspective view showing an actual assembled view of the optical axis alignment device.The tip of the probe opening/closing mechanism 42.degree. 42.degree. has a small diameter about the size of the heat sink 23, and is movable in the direction of the heat sink 23.

Further, the probe opening/closing mechanism 43 is movable in the upward F direction shown by the dotted line in FIG.

And these probe opening/closing machines G42.42'.

and 43 are provided on a probe moving mechanism (not shown).

The probe moving mechanism is X and Y shown in FIG.

It is said to be movable in each of the Z, α, and θ directions.

The operation of the above configuration will be described below.

The semiconductor PN junction element 1 is fixed in advance to the heat sink 23 with a brazing agent.

Next, the probe opening/closing mechanism 42, 42°
The N-junction element 1 is moved out of the room and the lower heat sink 23 is held therebetween.

Subsequently, the probe opening/closing mechanism 43 moves downward, and the semiconductor P
N junction element! contact above. Thereby, the semiconductor PN junction element 1 is electrically connected to the selection level meter 15 via the probes 40° and 40'.

Then, the light source laser diodes 7, 7' are modulated by f, f2, respectively, by the driver 13, 14. The light from the light source laser diodes 7 and 7' is transmitted through optical fibers 4 and 4', respectively.
The light is transmitted through the optical waveguide 16, 16' shown in FIG. 5 and is supplied to the semiconductor PN junction element 1. Therefore, the semiconductor PN junction element 1 detects the RF power and selects the level meter 1.
5, the detected value is output.

At this time, the probe moving mechanism is X, Y, Z.

Move in the α and θ directions to find the position where the RF power is maximum.

In this way, the optical axis of the semiconductor PN junction element 1 is aligned, and then the heat sink 23 and the conductive layer 18 under the semiconductor PN junction element 1 are fixed with a brazing agent 24 to form an optical module.

In the above embodiment, the optical axis alignment of two opposing optical waveguides in one semiconductor PN junction element 1 was explained, but it may also be used for, for example, an LD light emitting element, and in this case, the optical axis alignment with one optical waveguide is explained. It can also be used for axis alignment.

Further, in the above embodiment, optical axis alignment was performed using the semiconductor PN junction element 1 as a light receiving element, but on the contrary, the probe 40.
It is also possible to align the optical axis of the semiconductor PN junction element 1 by passing a forward pulse current through the semiconductor PN junction element 1 from the 40° 41 side to cause it to emit light, and by connecting a photodetector to the optical fiber 4.4'. . Alternatively, the moving mechanism may be divided such that the probe mechanism moves the package in the X, Y, and Z directions, and the package moves in the α and θ directions.

[Effects of the Invention] As explained above, according to the optical axis alignment device of the present invention, when aligning the optical axis of a semiconductor PN junction element to an optical waveguide of an optical module, this operation can be performed efficiently and quickly. This can be done without applying heat or trauma to the bonding elements.

Furthermore, since the process can be divided into the process of aligning the optical axis of the semiconductor PN junction element and the process of fixing it, it is possible to improve work efficiency and the reliability of the optical module.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an optical axis alignment device of the present invention, FIG. 2 is a partially enlarged sectional view of an optical module, FIG. 3 is a perspective view showing an example of the same device, and FIG. 4 is a schematic diagram showing an example of the same device. Side view of the device, No. 5
The figure shows conventional optical axis alignment, and FIG. 6 is a partially enlarged sectional view of conventional optical axis alignment. l...Semiconductor PN junction element, 4.4'--Optical fiber, 7,7°--Laser diode for light source, 13.14
--Driver, 15 - Selection level meter, 16.16
'-Optical waveguide (core), 17・-Lead wire, 18・
- conductive layer, 40.41 - probe, 42, 42', 4
3-... Probe opening/closing mechanism, 46... Insulating layer. 1X Tsubojin 7E Buried West Number of lights Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] A semiconductor PN junction device (1) disposed on a substrate, and one or a pair of optical waveguides (16, 16) in the active layer of the semiconductor PN junction device (1) on the substrate. ') in an optical axis alignment device for an optical module that optically couples semiconductor P
Optical waveguides (16, 16') in the active layer of the N-junction element (1)
a pair of probes (40, 41) for detecting a voltage generated between the terminals of the semiconductor PN junction element (1) by incident light from the semiconductor PN junction element (1); A probe opening/closing mechanism (42, 42',
43); and a probe moving mechanism that aligns the optical axis by moving the semiconductor PN junction element (1) held between the probe opening/closing mechanisms (42, 42', 43). Alignment device.