JPS63126215A - Semiconductor vapor growth device - Google Patents

Abstract

PURPOSE:To obtain the device having excellent workability by a method wherein a semiconductor vapor growth device is composed of a high frequency generating part, the main body of a vapor growth device and a control part. CONSTITUTION:A semiconductor vapor growth device is composed of a high frequency generating part 11, the main body 12 having a reaction furnace R1, the main body 13 provided with a reaction furnace R2, and a control part 14. The control part 14 controls the flow rate of gas to be introduced into reaction furnaces R1 and R2, the temperature and the like of the reaction furnaces R1 and R2, including the control over the controlling panel 14A of the control part 14, the key input part for operation, and a display unit and the like. The gas, the quantity of which is set by a machine driving part 16, flows into the reaction furnaces R1 and R2 provided on the main bodies 12 and 13. As a result, the device having excellent workability can be obtained.

Description

[Detailed description of the invention]

(Industrial Application Field) The present invention relates to a semiconductor vapor phase growth apparatus. A process in which a plurality of sequence processes are performed to perform vapor phase growth once every j. The present invention relates to a versatile and automatically controllable semiconductor vapor phase growth apparatus that is configured to form a program as a unit and allow an operator to execute the process program while modifying it interactively. [Prior Art] Today, as a method for manufacturing semiconductor chips, vapor phase growth apparatuses that perform vapor phase growth on semiconductor wafers are frequently used, and automation of the operation of this type of apparatus is required. ”: It became a sea urchin. Currently used vapor phase growth equipment generally uses a sequence program (hereinafter referred to as a wrestling program) that specifies the 11 lines of the process in the reactor, and uses pinboard switches to specify the progress of the sequence. has been done. In this case, the flow rate of the JJ to be used and the temperature inside the furnace are set by the operator by adjusting several variable resistors installed in the control device, and the control requires a lot of skill and experience. There is an element of judgment that involves. For example, FIG. 1 shows a system configured to control the progress of a process within a reactor using conventional pinboard switch technology. In FIG. 1, pins are inserted on the setting panel A of the pinboard switch in the order in which they are executed for each process program PP1 (i-1 to 17), and the sequence of process programs in each designated order is inserted. time is hour,
It can be set in minutes and seconds. In addition, the relay ladder circuit B has professional wrestling programs PP2. PP3゜PP1. PP4. PP6. P
P5. A command is given to effectively write the contents to the PP7 class, and a control signal is given to the valve head cap corresponding to the process of each command. However, with this pinboard switch control, it is only possible to set the interval for each process sequence, and the gas flow rate and furnace temperature used in that process must be set using another control object (variable resistor). Must be. In addition to the pinboard switch method shown in Figure 1, control methods using general-purpose sequence controllers have also been implemented, but these control methods also specify the flow rate and temperature using directly programmed data. Rather, it is equipped with a setting device such as a variable resistor. From this point of view, in order to minimize the amount of f'L in the operation, the gas flow 11'! ,, A control system has been proposed in which temperature T (1 and time) are measured using a DDC method using a knee computer. The process from raw material to finished chip requires many more steps than in other industries, and the vapor phase growth process is only one part of it.The various processes are organically combined in the relationship leading to the finished chip. However, it is not possible to significantly increase the number of equipment that is responsible for one single process part.
This is difficult in terms of manufacturing process and line balance. In addition, due to today's ever-increasing demands for increasing the degree of integration of semiconductor chips and demanding improvements in accuracy, in the technological development of semiconductor manufacturing equipment, for example, elucidation of physical and chemical phenomena in CVD reactors, new measurements, etc. The development of methods is progressing with complex influences. In particular, in the case of a vapor phase growth apparatus, work such as correction and correction of data concerning film thickness and the like is required while the apparatus is in operation. A specific example is as follows. ■ Changes in the liquid volume in the bubbler tank change the growth rate of the film thickness, so operators must perform periodic inspections and respond to changes in the source gas flow rate or sequence time by making corrections. ■ If a uniform temperature distribution cannot be guaranteed over the entire surface of the susceptor for wafer MYi, the film thickness distribution and resistivity distribution will deteriorate, but this may be due to variations during susceptor manufacturing, and it may be necessary to adjust the pitch of the induction heating coil, etc. The temperature must be adjusted accordingly. In particular, when replacing a new susceptor and increasing the temperature of the susceptor using an existing process program, it is necessary to remove gas and adjust the humidity. distribution is obtained. In addition, even if the uniform heat distribution is good, it does not necessarily mean that a good product can be obtained. If the specifications for film thickness and resistivity for the wafer are changed in the vapor phase growth chamber, the monitor wafer is placed in a vacuum chamber. Two or three sheets are placed on the top and the test process is executed to meet the standards.Process 1 is to determine this while making various changes.Evaluation work by the technician and data correction work by the operator. ■ Generating a vapor phase grown film on the wafer also generates a grown film on the susceptor, and this generated film has a negative effect on the wafer (autodoping). It is necessary to remove the layer.In this case, the operator monitors the removal status of the film on the susceptor in the reactor, and if the removal is not progressing properly, the operator temporarily stops the control (sequence hold) and removes the film. It is necessary to continue the work.The life of the susceptor is significantly affected by the back drying time and the number of recycles, so the susceptor must be replaced periodically.In this case, the new 41g septa It is necessary to gradually increase the output while measuring T'A in front of the reactor to reduce humidity nailing, and for this reason, the operator has to modify the predetermined parameters during the back-heating process on-site. However, with conventional control systems that use the bin board switch system or sequence controller, as mentioned above, when manufacturing chips of a certain quality, the operation of the semiconductor vapor phase growth equipment requires gas flow suspension and Since it is necessary to change many condition settings regarding temperature conditions, even if the order of the process program and its sequence time can be set programmably, the gas flow rate and furnace temperature must be set using a separate setting device ( The operator can directly operate the reactor using a variable resistor (variable resistor, etc.).From the operator's perspective, this has the advantage of being able to operate the reactor with peace of mind; Since it is impossible to record when a In a control system that uses the DDC method using a computer and sets time `` and q as process parameters, it is necessary to modify the contents of the process program in order to change the settings of item 1'' as described above. The system program must be constructed to include a program for modification as part of the sequence program. However, in this type of control system, once execution of a preset process program is started, the contents of the process program cannot be modified until the operation is stopped midway or one processing operation is completed. For this reason, it is not possible to easily change the setting of the column ff as described above, which has the disadvantage of not only lowering the yield of products but also lowering the operating rate of the apparatus. Therefore, an object of the present invention is to determine the process parameters such as time, gas, and temperature that are required for each sequence process in a plurality of sequence processes for performing one-time vapor phase growth. Information is stored as a process program, and this process program is used as a unit by an operator to call up its contents and display it on a display means, making it possible to modify each process parameter and to execute the contents in real time. An object of the present invention is to provide a semiconductor vapor phase growth apparatus that can easily implement various required operations using a series of process programs. [Means for Solving the Problems] A semiconductor vapor phase growth apparatus according to the present invention includes a reactor for performing vapor phase growth on a substrate such as silicon, a means for heating the substrate, and a vapor phase growth apparatus for vapor phase growth. a network of pipes connecting various gas sources necessary for the reaction to the reactor; and a network of pipes provided on the network so as to guide desired amounts of the various gases to the reactor. In a semiconductor vapor phase growth apparatus, the semiconductor vapor phase growth apparatus includes a valve device for controlling the ON/OFF state of the valve device and a control device for providing a signal for controlling the ON/OFF 4L or its opening degree and a signal for controlling the heating means, the control device comprising: The required sequence time corresponding to each actual sequence process related to one-time vapor phase growth in the furnace, the type and flow rate of one or more gases to be supplied within the sequence time, and the A process program is formed that can store information regarding the bulging temperature in the furnace within the sequence time using the parameter data corresponding to each of the sequence processes, and this process program is used as a unit to program this process. a first memory means for storing one or a plurality of process program groups corresponding to the one vapor phase growth; a key input means; a display means for displaying a display; a decoding processing program for sequentially decoding each process program in the process program group to form each control signal to the valve device and the heating means; and a decoding processing program displayed on the display means. a second memory means for storing a modification processing program for modifying the contents of the process program; and a second memory means for storing a modification processing program for modifying the contents of the process program; Each pipe is installed in a pipe that communicates with the various gas sources that control the flow rate.

[The gas supply valve and the mass flow valve installed in the pipe communicating with the reactor, etc.,
A temperature setting device connected to a power source for controlling energization of an induction heating coil that controls the temperature to be achieved in the reactor based on the data of each process program in the process program group sequentially decoded by the memory means. A semiconductor device according to the present invention, characterized in that the semiconductor device according to the present invention is characterized in that it is equipped with a switch for inputting a process program group and a process program group input device that receives a process program group stored in an external storage medium such as a magnetic tape or a magnetic card. According to the vapor phase growth apparatus, when performing heating and gas supply in the reactor, the gas supply is controlled by turning on or off or the opening degree of a valve device provided in the pipe network, and the heating means is controlled. It is configured to be controlled by a predetermined signal, and in this case, the sequence time required for each actual sequence process related to one vapor phase growth, the type of gas supplied within this sequence time, and its flow rate. The information on PA and the temperature La that should be achieved in the furnace is stored as parameter data to form a process program, and a process program group is constructed by this. Each process program can be called arbitrarily and interacted with it. Modify the format and earn this right away! The system is configured to avoid execution in the process in II, and in J, it is possible to smoothly perform operations corresponding to changes in each sequence process in actual physical and chemical processes. In particular, in the apparatus of the present invention, when supplying gas, supply valves are provided in the pipes communicating with various gas sources, mass flow valves are provided in the pipes communicating with the reactor, and induction heating is provided in the reactor. A coil is provided, and the energization is controlled by a temperature setting switch, and an input device for a process program group stored in an external storage medium is provided to increase versatility as a control device. This makes it possible to achieve extremely stable and appropriate automation control. (Example) Next, an example of the semiconductor vapor phase growth apparatus according to the present invention will be described with reference to the accompanying drawings starting from FIG. FIG. 2 is an external view, not showing an embodiment, of the semiconductor vapor phase growth apparatus of the present invention. In FIG. 2, reference numeral 11 is the main body of a vapor phase growth apparatus equipped with a high frequency generator and 12.13LL reactors R1 and R2. Reference numeral 14 is a control unit that controls the gas flow rate into each reactor, the temperature inside each reactor, etc.
Further, 14A is an operation panel of the control section 14, which includes an operation key manual section, a display unit, and the like. The details are shown in FIG. Reference numerals 12A and 13A are operation panels for performing operations such as opening and closing of the reactors R1 and R2. FIG. 3 is a conceptual block diagram illustrating the operations performed in the vapor phase growth apparatus shown in FIG.
MT) or an internal memory provided in the control unit 14 (
17) The process program stored in advance is
In this case, in response to the input process program, it controls the opening/closing of valve devices, etc. provided in the equipment drive unit 16, and the control of their opening degrees. 4f is set so that the operation for this purpose is performed. In addition, the contents of the processing of the processing section 14-1 and the processing section 14-1
The input information can be displayed on the display 1/IA-2. In the apparatus main body 12, 13 corresponding to FIG. 2, gas set by the equipment drive unit 6 is allowed to flow into the reactors R1 and R2. It should be noted that the above-mentioned equipment drive unit 16 and necessary conduits, in ascending order, are arranged at the bottom of the back side of each device 12, 13, similar to that shown in FIG. In addition, the details of the pipeline network showing the layout of the pipelines and ascending order are shown in the seventh section.
As shown in the figure. FIG. 4 is a detailed block diagram of the control system of the apparatus according to the embodiment of the present invention. In the same figure, reference numeral 21 is the central processing unit 1 to CPU for main calculation, and this CPU 2
1 is connected to a disk bus 22 and an i10 bus 23. The data bus 22 includes a storage unit 2/l, which stores in advance a series of process programs to be executed in each reactor R1 or R2, and a γ display K r CRT 2.
Temporarily store and cover the contents displayed in 9C RT
A RAM 25, a temporary storage section 26, and a storage section 27 that stores each processing program for operating this system are connected to each of them. The above-mentioned temporary storage unit 26 stores data used during the operation of this system, such as input data from the keyboard 31, ON/OFF information of various switches, or processes provided from an external storage medium such as a cassette tape. It is used to store a group of programs. Furthermore, a CRT interface 28 is connected to the i10 bus 23, and the content to be displayed on the CRT 29 is transferred to the CRT interface 28.
Give to T29. Furthermore, 30 and 32 are input modules, which receive input data signals from the keyboard 31 and the pressure switch PS and limit switch LS's, respectively.
It acts to take in the signal from the switch into the temporary storage section 26. Furthermore, the i10 bus 23 has an output module 34. ．． 3
6.38 are connected, respectively lamp, LED,
Output commands are given to output parts 35 such as valves, gas valves 37, and three relay drive parts. Reference numeral 40 denotes a motor and a valve driven by the relay drive unit 39, which are respectively a motor for rotating the cylinders in the reactors R1 and R2 and a valve for driving the cylinder for opening and closing the lid of the reactor. Furthermore, the i10 bus 23 includes a D/A conversion module (
DAM) 41 and A/D conversion module (ADM) 43 are connected, and DAM41 is the flow control valve MFCTiC.
. A control voltage that specifies the flow rate of gas flowing through VCl is given as an analog quantity. Further, the ADM 43 receives an analog signal from a detection unit that detects the flow rate flowing to each control valve as a feedback signal, and converts this into a digital signal.
It is a kind of moxibustion. Reference numeral 46 is a sub-central processing unit, which transfers a group of process programs stored in cassette 1 to magnetic tape (CMT) 51 to a 1-inch storage unit (AM in 1) 53 via four ink faces for storage. Alternatively, it also operates on the CMT 51 to write the process programs stored in the RAM 53 therein. This CPU 46 operates according to the processing program stored in the storage section ROM 52. 48
54 is a data bus that connects the ROM 52, RAM 53, and CPtJ 46, and 54 is an i10 bus that connects the CPU 46 with the interface 49 and high-speed memory data transfer unit (HMT) 50. On the other hand, another high-speed memory data transfer unit (HMT) 45 is arranged on the i10 bus 23 mentioned above, and this HMT
The MT45 and HMT50 are connected by a data highway 47, so the contents of the RAM 53 are stored in the RAM.
26 or vice versa, transfer the contents of RAM 26 to RAM 53.
It works to transfer data at high speed. By writing this, CIVI T51 (or magnetic card etc.)
It is possible to avoid the problem that the time required to read out the process 10 grams from the CMT 51 and to load the same data into the CMT 51 limits the speed of the arithmetic processing of the CPtJ 21. Of course, instead of elements 46-55, these should be
Data may be exchanged via an input/output module connected to 3. Also, ROM27
The type of processing program indicated by is such that a group of process programs (hereinafter referred to as PPG) stored in the RAM 26 are sequentially read out and the CPU 21 decodes them into sequence instructions corresponding to each process program (hereinafter referred to as PP). The following processing program is used. ■ A processing program for controlling the CPU 21, that is, a process program [1 gram (PROCESS)]
S-C) ■ A correction processing program (H
(ODirY), ■ A process program generation processing program (PROCESS) for inputting necessary data using the keyboard 31 and generating a new PPG, ■ A RUN processing program for displaying the currently ongoing process on the CRT 29, ■ Any P in PPG
A processing program (STEP) for converting P(i) into an open bale of P P (j); ■ A processing program for transferring PPG stored in the RAM 26 to an external storage medium (for example, CMT 51) via the RAM 53; (5TOPE), ■ A processing program (SORT) that performs the opposite action to the 5tore function, ■ TKr authentication to confirm the PPG stored in the RAM 26 before applying it to the processing program PROCESS-C. Processing program (VrRiFY), ■ Processing program that performs self-diagnosis of this system during operation (DiAGNO3iS), [Inc.] Process for servicing the elapsed time of one PPG during operation, calculating the elapsed time 70 crumbs (USED TiHE), ■ A processing program (TEST) for performing various test functions is stored in the ROM 27 as a processing program, and by specifying one of these, CPIJ 2
1 performs necessary arithmetic functions according to each processing program. The details of the operation of each processing program in the ROM 27 in FIG. 4 can be explained in flowcharts 1 to 1 below. FIG. 5 is a front view of the panel operation panel of the control device shown in FIG. 2. In the same figure, reference numeral 61 is a display device 1, and 62 is a cassette 1 for holding a cullet magnetic tape.
- Tape mounting section, 63 is a key manual device, 64 is a temperature control section, 64-1 is a furnace temperature, and 64-2 is a humidity setting switch. In addition, 65 is a process program group P
This is a display section that displays the type of PG. Area 66 includes an alarm buzzer 66-1 and alarm reset buttons 1 to 6.
6-2 is provided. Data input 1 rear 67 has
Program star 1 - push button 67-1, gas selection switch 67-2, reactor selection pattern thumbwheel switch 67-3, PPGm selection designation thumbwheel switch 6
There is a 7-4. Switch 67-3 is O→R1 only, 1→
Only R2 is like 3→R1+R2. Reference numeral 67-5 is a push button, and when it is pressed both with push button 67-1, it becomes valid. In area 68, 68-1 indicates a star 1 switch, and 68-2 indicates a star 1 switch, and 68-2 indicates a star 1 switch.
It is used as a command to start the sequence process of two PPGs. Furthermore, 68-3 is an induction heating furnace,
The six LEDs are arranged in the upper row to turn on LEDs corresponding to the type of process in which the reaction is progressing. Each PPG consists of an appropriate combination of 1 to 17 sequence processes. At the lower stage, each LED for alarm display is provided. FIG. 6 is a detailed cross-sectional view of reactor R1 or R2. In the same figure, a lower center 2 of the bottom plate 71 is provided for introducing gas to be used for vapor phase growth in the furnace. It is designed to be discharged from the exhaust (blow) air hole 73 of. Furthermore, a rotating member 76 that supports the susceptor 75 at its upper part and the rotating member 76 at its top is arranged on the outer circumference of the above-mentioned conduit 74, and the rotating member 76 is rotated by a motor 77 with a reduction gear. It has become. An induction heating coil 79 is arranged below the receptor 75 with a cover 78 in between. Further, 80 is an insulating plate that also serves as a support for the coil 79, and is fixed above the bottom plate 71 with bolts 81. Furthermore, 82.83 is mW heating coil 7
There are two external connection joints. Inside the coil, in order to prevent heat caused by high frequency current from damaging the coil itself,
It is designed to allow water to flow inside. The ceiling i90 facing the bottom plate 71 consists of three layers, each consisting of a quartz layer 84, a first stainless steel layer 85, and a second stainless steel layer 86 from the inside. There are gaps between each layer 84, 85, 86. Further, reference numeral 88 denotes a clamp member which presses the flange 87 of the ceiling W90 downward when excited by an air cylinder device R9. An observation window 92 for observing the susceptor 75 and the wafer 91 on the susceptor 75 is attached to the ceiling cover 90. In addition, wafer 91 and susceptor 75 are placed on Amatsuki Waka 90.
The temperature detection window 93 is detected by the light entering through the quartz layer 84.
A bracket 94 is integrally constructed with the sky and moon rose 90, and is connected to a screw 1 of a cylinder (not shown) so that it can move up and down. For example, the wafer 91 on the susceptor 75
When replacing the ceiling cover 90, the ceiling cover 90 is moved upward. FIG. 7 is a gas piping system diagram connected to reactors R1 and R2. In the figure, the gases supplied to the reactors R1 and R2 are N and R from the left in the lower part of the figure.
2, DN. Dp and HCl gas chambers 1o1゜102.1
03,104.105. Further, 106 is a bubbling chamber, which contains a liquid of silicon tetrachloride 5iC14 or Si 1c13. A pressure switch PS1. A normally open valve PVI (hereinafter, normally open valves are marked with a minus sign) is provided and communicates with the valve PV7. Similarly, a conduit extending upwardly from chamber 102 includes pressure switch PS2. A valve PV2 is provided and communicates with the valve PV8. The outlet bows 1~ of the valves PV7 and PV8 merge and are connected to PLl and PL2 via the mass flow valves MFCI and MFC2, respectively. Pipe line PLl Above, there is a gas merging valve P V 19, a P V 201fi reactor R1 and (
7) [A valve PV19. Mixing is possible by exciting PV20. Similarly, gas merging valve PV21. PV22 is provided between the reactor R2 and the gases supplied by the pipes PLIΔ, PL2A are passed through the valves PV21. Mixing is possible by exciting PV22. Two pipes Pl-3A and PL313 are extended from the chamber 106 to J3 and a valve VC1.
It is connected to the. Cast 12 enters port ~1-PO of opposite valve VC1, exits the same H% port-1・R2, and enters pipe P.
L3△, pass through valve PV3A to Pablingji↑・Mba 10
6 and is discharged into liquid 5iC14 to perform bubbling. Therefore, in the space within the chamber 106,
A gas mixture of vaporized S i CR4 and R2 is produced, which passes through valve PV3B on pipe PL3B, passes through input port P3 of valve VC1, output port P1, and is connected to pipe PL6A. Mass flow valves MFC4, MFC5, and MFC6 are connected to a conduit extending upward from the dopant N gas chamber 103 via a valve PV5. The input side of the facing valve MFC4-6 is the hydrogen gas H2 pipe line PL.
5 via valve PV9, and the mixed gas is supplied from the output side to pipe line PL1A! connected to fE. A similar piping system is Dopan t-p gasti [! lever 10
4. A retail is formed by cutting the duct into a conduit extending upward from 4. Each layer r PV 23 , PV 24 . From the drawing, it is clear that MFC8, MFC9, and MFCIO correspond to each of the layers mentioned above! Let's be @. Gas HCj! On the pipe extending from the chamber 105,
A valve PV6△ and a mass flow valve MFC7 are provided, and merging valves PV20 and PV22 are respectively input to the mixing boat. On the upstream side of the mass flow valve MFC7, there is a valve PV.
Pipe line PL5 is joined via 6B. FIG. 8 shows how a command value voltage is given to the mass flow 42 from the control device including the MASTER CPU 21 of FIG. 3, and the command value "voltage" is given via each D/A converter 123. The output from the flow rate detection section attached to each mass flow is sequentially taken out by the analog multiplexer 122 (thereby, the A/D converter 3 &
21, it is incorporated into the above-mentioned control device as a re-digital signal. In Fig. 9, ノE蓚1, 1 to 17, Hanaeiro correspond to each process program, and the duration of that sequence is shown numerically in minutes and seconds in the TiME column on the right side. There is. Also, on the right side of T i MEIII, the gas flow rate used in that sequence is written.
A FLOW column is provided. GAS FLOW
On the right side of the column, there is provided a humidity setting column for specifying the temperature θ° C. inside the reactor. Now, a case will be described in which the operation formula shown in FIG. 9 is applied to the pipe line shown in FIG. 7. In FIG. 9, the content of the process program P P (1) is N Purque, which supplies N2 for 3 minutes at a flow rate of FNlj)/min. From chamber 101 in FIG. 7, gas N2 is supplied to valves PVI, PV7. It passes through the MFCI, passes through PV19° and PV20, enters the reactor R1, reaches the exhaust port A, and undergoes purging. In addition, the flow rate ♀FN1ff/min is MFC
It is given as a voltage command value to 1. The process block "]gram PP (2) is N2Purc+e, and a flow m of FH2f!/min is set for 3 minutes. The gas H2 is P
V2. PV8. MFCl enters reactor R1 through PV19°PV20 and is discharged as in the case of N2Puroe. Next process program PP (3) (hereinafter P P (i
) is HE AT ON (1), the amount of gas H2 supplied to the reactor R1 is FH21/min, and the joint venture status remains unchanged. Then, the induction heating furnace is set to the first stage level and heated for 3 minutes to reach the first set temperature θ1. Next, in P P (4), the gas H2 is set to the second stage level so that the set temperature θ2 is maintained at the same flow rate.
Heat for a minute. Next, P P (5) is HCj! V
F2N-r. The settings are 3 minutes, N2 is F H21, /min, 1-
I C1 is the flow n1 of F HCl-j2 /'. Gas HCN c, valve PV 6 A, MF C7
';c Pass through > 1・Flow to the mouth. I-I Cf! F
I-I CL N ,' min (J, the following flow rate is set by the command voltage to MFC7. Next, P P (6) is t1 (1! ETCH, and fj is continued for 3 minutes. Therefore, P P (5) is combined with N2 at the merge valve PV20 and supplied to the reactor R1.Next, P P (7) is operated again for 3 minutes)-12 Purge
It is said that P P (8) changes the temperature inside the furnace from 02°C to 03°C with 1-IEAT DOWN. After completing the 3-minute P P (8) process, preparations for vapor phase growth are almost complete, and then P
Move on to P (9). P P (9) is EPi V
ENT(1), 3 minutes, t' is FHρ/min,
Dopant gas DP to FDP/'min, S i Cj
! 4 to FS19. , 'min C. Gas 1” 2 is P2 → VC1 → PV
3 → The mixture of gaseous SiCl2 and 1''2 is transferred from the chitonba 106 to P V
3-? It reaches C1 and is supplied to pipe line PL6Δ. Chitomba 104 to PV23. MFC8, MFC9゜Bepan l-gas DP is supplied through MFCIO, so this gas DP and I reaching pipe PL6A
I2+5i (merging with 14, Ben) - V E N T
is discharged. Then, when P P (10), this becomes EPi
DEPO, and for each gas flow, PV19 is turned on similarly to P P (9). This continues for 3 minutes. Therefore, the aforementioned gas (D + H + S I C14) in the pipe line PL1A joins at PV19, and further enters the reactor R1 through the main bow 1~ of PV20 to grow a P-type semiconductor on the wafer on the susceptor in a vapor phase. . The growth reaction in this case is carried out by an aqueous five-factor reversible reaction as shown in the following formula. S i CI2 + 2H2; Go S i
+ 4 l-I CI2 Thus 3i is accumulated on the wafer. Phosphine (Pt+osphine) PH3 is usually used as Toppan 1 to Gas DP. 4j Also, 82H6 (Diborane) is usually used as the bepan 1 gas D for forming an N-type semiconductor. When 3 minutes pass at P P (10), the vapor phase growth is completed, and then P P (11), )-
12P LJ r Q e (D for Gust 12 FH2
f! Supply for 3 minutes at a flow rate of /minute. Then PP(12), PP(13), PP(14
) is not used, so when P P (15) is reached, HEAT OFF is activated and the power supply to the induction heating coil is cut off. The reason why the time in this case is set to 3 minutes is to allow for the time required for the temperature inside the furnace to decrease. The other day, R2 is FH24! Supply at a flow rate of /min. P P (1G) lasts for 12 minutes and 3 minutes. Next, move to P P (17) and N
In PIJ r ge, N2 gas "N17j/min is maintained for 3 minutes. In FIG. 9, if dopant gas DN is used to form a layer of N-type semiconductor, PV5° from chamber 103 in FIG. PV9.MFC4, MFC5 are invalid
It is easy to understand that the effect is 4T. In addition, in FIG. 7, when reactor R2 is used instead of R1, PV21°PV22 becomes PV19. PV
It is easily understood that it can be operated instead of 20. FIG. 10 is an explanatory diagram when reactors R1 and R2 are operated in parallel. Here, the parallel operation referred to in this application is one way to effectively utilize electric power in the method of induction heating inside the reactor shown in Figure 6. Passing through each 21 coils of R1 and R2
Although not energized at the same time, the coils are energized as effectively as possible, that is, in parallel operation, each coil is energized in one direction or the other. In Fig. 10, the inner humidity θ of the reactor R1 is shown on the upper stage.
A graph showing the relationship between °C and the transition of each process program PP(i) is shown, and on the upper side, the IW transition of each process program PP1) related to the reactor R2t is shown. In the figure, when the start switch $1 for the reactor R1 is turned on at time 10, the process program group PPG(1) starts, and as shown in the figure, the process program PP(1). When P P (2) is completed, move on to P P (3),
The induction coil is turned on, and the reactor R1 continues to be heated until P P (15). The power supply to the induction coil on the R2 side of the reactor is turned ON immediately when P P (15) on the R1 side is completed. For this purpose, it is assumed that the start switch 82 Gi S 1 switch for the furnace R2 is turned on when a time T4 has elapsed since it was turned on. Now, from the S2 switch ON, the process program group PP
G (2) first process program P P (1)
If the time at L is I3 (R2), and the time between IR'+ from P P (1) to the start of P P (3) is T2 (R2), then in parallel operation , T1 (R1)=-r/'I(R2)+H3(R2)+
The result is to maintain the relationship H2(R2). Since the time at which the S2 switch is pressed is arbitrary (generally, the S2 switch is turned on when the preparation work for placing a wafer to be subjected to a vapor phase growth reaction in class R2 is completed. In the illustrated example, the time is set to t1. ), it is difficult to predetermine the actual start time t5 of PPG (2). As a method for solving this problem, in order to actually perform parallel operation as shown in FIG. 10, it can be performed as shown in FIG. 11. In FIG. 10, the time intervals T1 (R1) and T2 (R2) are known and pre-programmed time data. In FIG. 11, the register 131 stores the difference between T1 and T2 (11), while the counter 132 stores the difference between T1 and T2.
generates 21 pulses every second (1 pulse per second) from 81 switch ON to 82 switch ON. 133
(There is another counter, and the S2 switch is turned on.
At the point in time, the difference (T3) between the value of the register 131 (TI-T2) and the value of the counter 132 (T4) is set, and after the 82 switch is turned on, this is subtracted by J: from the second counting pulse, and the count is out. When this happens, PPG (2) is actually started. In addition, as another method, although not shown, the counter is set to 1.
If you set T1 and perform subtraction counting using the second counting pulse after the S1 switch is turned on, and then subtracting T2 when the S2 switch is turned on, this counter is also subtracted using the second counting pulse. When the number reaches zero, the actual start 1 instruction of P PG (2) may be given. In FIG. 12, the data structure of the Glores Program PP to be processed by the processing program of the fourth tree station and the process program group PPG consisting of a series of the same process programs is shown as 1 in the figure. The diagram shows the contents of one process program, and the sequence number i of the process is stored in the first main area. The next memory area shows the data size of S1, which is the sum of the following memory areas. The data indicate the duration of this process sequence in minutes and seconds. Furthermore, an 8-bit data bit code is stored in the next memory area. Specific examples are not shown below. In the next memory area, the furnace temperature among the output data is set. Furthermore, the flow foot of gas H2 is set in the next memory area. Now, when temperature and gas H2 are given as output data, the data bit code is the leftmost bit and the two bits to the right -1. Figure 12 (a) is
This is an example of one P Gas flow 1 to be sequentially output to the area
is now stored. 12) includes process program groups PPG(1) and PPG(2) corresponding to parallel operation shown in FIG.
) data structure is shown. That is, P PG (1) is stored in the first memory area corresponding to the left reactor R1. Hereinafter, a parallel operation time T1 and a parallel initial time T2 are set. This parallel initial time T2 is the 10th
In the figure, P P G (1) has P P (1) and P P (2
) is the sum of sequence times. Parallel initial time T2
From the next, PP(1), PP(2),...PP, (
Each process program data up to 17) is stored, and then ENDOF PROG
It becomes RAM. FIG. 13 is a flowchart showing the processing process of the system program of this system (contents of ROM 24).
In the first step (hereinafter referred to as STI) after the start of the program step in FIG. 5, an input is made from the setting button of the switch 67-4 in FIG. Keys such as $RUN, $FETCH... flags corresponding to processing programs (some of which are shown with symbols in the storage unit 27 in FIG. 4) manually specified are set in RA.
Set in the flag memory in M27. Then,
In ST2, the flag bit of the process control flag ($PROCESS, C, is input) is checked. If YES in ST2, the process is controlled in ST3. If NO in ST2, the process moves to ST4. Next, in the 8th section 4, it is checked whether each operation part of the reactor R1, R, 2 (for example, the opening/closing pushbutton of the reactor, the rotation of the motor, etc.) is ON or not, and if it is ON, the S
At T5, a command is given to execute the corresponding switch contents. If NO in ST4, the process moves to ST6. ST
Each Stella 7 G, t, Fig. 4 (7
) in the ROM 27 (7) MOD i It corresponds to each processing program from FY to T[ST. ST6~5T2
5 is normally one (preselected and made valid. FIG. 14 is a flowchart showing details of process control corresponding to subroutine ST3 in FIG. 13. ST
ST3 is attached to each processing step to indicate the specific content of Step 3. In the same figure, if the star 1 switch of reactor R1 is pressed at 5T3-1, 5T3
-2, here it is checked whether the sequence remaining time of the currently operating process program PP(i) in the process program group PPG(1) related to R1 is -0. The remaining time of this sequence is not shown in FIG. 22, but is shown in flowchart 1 of the second processing program;
The sequence set of I'P(i) is reduced c), and the result of this reduction is the sequence remaining ', 'T. Now, when the remaining sequence time becomes -0 in 5T3-2, 5T3-/l In the following process program P
P(i) is specified and its data is imported. Then 5
At T3-5, the newly specified sequence time of P P (i) is set. And before this)
The second processing program starts running. Then 5T3-
6 outputs data regarding the instructed gas flow 1 and furnace temperature, which are output data;
gives ON/OFF commands to various valves. Next, in 5T3-8, the sequence is incremented from 1 to i + 1 in preparation for the next sequence set. Note that when the start switch of R1 is OFF at 5T3-1, the process moves to 5T3-3, where it is checked whether the start switch of reactor R2 is ON or OFF. If YES at 5T13, proceed to 5T3-9 and R2
It is checked whether the sequence remaining time of the currently right-moving process program among the eight process programs related to PPG (2) is 0. Hereinafter, the contents of each processing step from 5T3-10 to 5T3-1/l correspond to steps from 5T3-4 to 5T3-8. If NO at 5T3-2, the process moves to 5T3-3 via confluence point (3). In addition, in the case of No in 5T3-3.8T3-9, it reaches the 6th contact END, and this blue-
Finish the processing of Chin ST3. FIG. 15 is a flowchart 1 showing details of the subroutine ST7 in FIG. 13. In the modification operation, when the $MODiFY key is pressed manually, the message MODiFY BEIL-JΔR- is output from the system 11 side. Reactor R1, R2 from R1 to L
, input R2→R and cover it. Here 1° is LEFT, RI
It's the taste of cLRi GHT. Subsequently, as additional information, the process name (PPG(i), [Pi, etc.), creation date, creation date, etc. that will be formed after modification are registered. Next, input the process pattern to modify the process program group PPG of the type. Next, the following message is issued from the system side, and necessary information is input and registered to modify one process program PP. A message corresponding to a certain PP and its modified state are shown below. S E Q U E N CE = P P (3)
N2=50 45 TiME=300 230 This example shows that the gas N2 was modified from 50β/min to 45β7/'min, and the time was modified from 3 minutes OO seconds to 2 minutes 30 seconds. FIG. 15 shows details of MOD:FY processing f1]-. In the figure, the process program PP(i) to be modified is input at 5T7-1. 5
Moving to T7-2, it is checked whether the input P P (i) belongs to the corresponding PPG. 5T7
If NO in -2, it is checked in 5T7-3 whether the modification operation is finished, and if YES, subroutine ST
7 becomes END. Further, if NO in 5T7-3, an alarm command is given to the operator in 5T7-4. If YES in 5T7-2, the process moves to 5T7-5, where time data (sequence time) is extracted from the output data of PP(i) and displayed. Then 5T7-6
If you want to modify the time data, go to 5T7-
7. Correct the time as above. As a result, the parallel operation history must be changed, so 5T7-
In step 8, the total i5 is performed, and the data is stored in the memory area between the parallel operation sections of the PPG. Next, move on to 5T7-9.8T7-10 and if you want to correct the temperature data! , corrections are made in LST7-11. Furthermore, if it is desired to modify the gas flow rate at 5T7-12.8T7-13, the modification is performed at 5T7-14. Thereafter, necessary process programs P P (i) in the PPG can be designated one after another to be modified. Note that to notify the system side of the end of the MOD i FY operation, enter ■. Next, subroutine ST9 in FIG. 13 will be explained. PROCESS is a processing function that generates a group of process programs to be executed. When $PROCESS is entered, the system will issue the following message: PROCESS BFLL-JAR=Next, input the reactors R1 and R2 you want to use (input L or R or L + R). At the end of the input, it is fine if the system accepts it, but if you input incorrectly, the system will issue a J error message, the above message will be displayed again, and you will be asked not to re-enter the input correctly in an interactive format. I try to do that. Next, as additional information, process name, creation date, creator, etc. are registered as a directory. Next, enter the process pattern to execute the type of process. If N type vapor phase growth is to be performed, the following display will be input. PROCESS PATTERN = EPi N
(1) The underlined part is the input part. When various information is input in this way, a process program PP to be executed next is generated. Next, the system sends the next message, in response to which the necessary information is input, and the process for configuring the EPiN is sequentially generated and completed. 5EQUENCE-PP(1) (2)N2・5
0 (+E) T i M E = 300 (4) (2) is the sequence name, (3) and (4) are the necessary information accompanying the sequence, and in the case of (3), the gas used is Using N2 gas, the flow rate is 50 <1/min).
The value is entered as a numerical value. Continuation (4) is inputting the execution time required for the sequence. FIG. 16 shows $RUN. When you press $RUN, the currently running process (
The latest information on each state change (corresponding to one process program) is displayed. If a process is being executed in reactor R1 or R2, the following will be displayed, for example. * R[IN BELL-J to R=RISFQI
I[NC['= r:I'i 1 DEPO3ET
Tit(E=1234 x x CUrlRrNT DATATE) IP=
1200 H2= 55 ON= 10 SiCr4=22 TiHE= 59 (Subtraction) (STOP TiHE ==xxxx (Increase))X
RUN BIELL-JAR=lt2SEQI
IENCE= N2 PURGESET Ti
HE = 300 x x CURRENT DAT8N = 5
5 Display $$$. Each of the display contents described above is performed by each processing step of the procedure shown in the flowchart of FIG. 16, which will be explained below. Each processing step in FIG. 16 will be explained below. First, in 5T11-1, it is checked whether a process is being executed. It is being executed (if it is J, it moves to 5T11-2 and displays the end of professional wrestling ($$$). 5T11-1
If the process is being executed in ST11-3, the process “f[[1gram PP (i
) name is displayed. Next, the process moves to 5T11-4, and the sequence time (S
ET TiHE). Next, it is checked at 5T11-5 whether or not the sequence has stopped. If YES, the process moves to 5T11-7, and the cumulative stop time of the sequence P P (i) being executed is displayed. This sequence stop occurs when an operator issues a command to stop the sequence due to some abnormality during automatic operation, and normally sequence stop does not occur during normal automatic operation. Now, 5T11-
If No in step 5, the process moves to STI 1-6 and displays the elapsed time TiME of the sequence being executed. Next, the process moves to 5TII-8 and the execution sequence P P (
i) Check whether temperature is controlled or not. 5T
If YES in II-8, the process moves to 5TII-9 and displays the current measured temperature inside the furnace. 5T11-8 smell”U
If NO, go to 5T11-10 and check whether the running sequence p p m is managing the gas flow a1. If YES in 5T11-10, 5T
11-11 displays the current actual flow rate. 5T11-10
If the answer is NO, return to the confluence ■. Next, the processing program 5TEP shown in FIG. 4 will be explained. This processing block diagram 5TEP includes each process program P P in a certain process program group P P G (i).
Provided to change the order of (i), $5T
When you enter EP and key manually, 5TEP BELL JAR=Ryu is displayed. The underlined part indicates the reactor R1, which is manually operated by the operator. Next, necessary items are registered as additional information such as the name of the process program group, creation date, and creation fM'IF as a directory. Next, the system side asks whether the system wishes to change the order of PPGs of type PPG as a process pattern. Please accept this display below. PROCESS PATERN=EPi N The underlined part is the input part of the operation lake, indicating N-type vapor phase growth. Next, from the system side, as shown below, EPiN (
Each process program P P (i) in one process program group) is sequentially shown as 5 EQUENCEs as shown below, so the necessary information is entered on the right side of the equal sign. S E Q U E N CE = P P (1) S
E Q U E N CE = P P (2) S
E Q U E N CE = P P (9) S E
Q U [N CE = P P (4) S E Q
U E N CE = PP' (17) To finish STEP, manually input $. Fig. 17 shows the details of (Nublubun 5T13 (Fig. 13). In the same figure, when $5TEP is input, S
At T13-1, secure a memory area for 5TEP. Next, the process moves to 5T13-2 and sequence number 81 is input. Next, the process moves to ST13-3, where it is checked whether the sequence number is 1 or not. If YES in 5T13-3, the data of PP(i) is transferred to the reserved memory area. STI
If No in 3-3, move to ST13-5 and 5TE
Check whether P is finished. If YES, 5TEP ends (END), if NO, move on to 5T13-6,
υ to the operator as there is a sequence number that does not exist
In the old style, this 5TEP' process is ended. Next, 5 TOPE in the ROM 27 shown in FIG. 4 will be explained. Processing program 5TOR
E is for generation (PROCESS) or modification (MOD).
i FY) process program group PPG is stored in the external memory of this system. The transfer action is performed on a medium such as a preset tape, a mini-floppy disk, or a bubble memory. FIG. 18 shows details of subroutine 5T15 in FIG.
It shows a flow chart ↑--. In the figure, in 5T15-1, the first process program (PP(i), i = 1) of the process program group PPG(k) that is about to be stored in the external storage medium is
), and then in ST15-2, the external storage medium (CMT51) used is initialized, and it is determined whether or not the device can be used. Next, the process moves to ST15-3, which is a determination step. In this step, it is checked whether all P P (i) from the RAM 26 are transferred to the RAM 53 or not. If YES, from RAM26) also △M
Data to 53 (for one P P G (k))
The transfer of data from the RAM 53 to the CMT 51 is completed, and the process moves on to STI 5-4.
This is done by the OM52 program. When the transfer to the CMT 51 is completed, the completion is notified to the operator at 5T15-5. On the other hand, if No in 5T15-3, the process moves to ST15-6 and the data of P P (i) is
Transfer to AM53. Next, the process moves to 5T15-7, and the presence or absence of an abnormality is checked, and if YES, the occurrence of the abnormality is notified to the operator at STI 5-9. If NO in 5T15-7, S
Moving to T15-8, the next sequence PP(i+1)
Increment i to i+1 to specify . When 5T15-8 ends, the process returns to STI 5-3 and is repeated thereafter. As can be seen from the system block diagram shown in Figure 4, the 5TORE processor is RAM
PPG (10, i1
0 bus 23, high-speed memory data transfer unit (HM block) 7I5
, Data Highway 47, HMT50. data bus 48
The data is stored in the RAM 53 through -. And R
At AM53!・The attached P P G (k) is SU
B-MASTER/CPLJ46/ROM52 connects external storage medium 1 via cassette 1 to MTrF.
The data is stored on a cassette magnetic tape-51 (CMT). Next, the processing program 5ORT shown in FIG. 4 will be explained. This 5ORT has the opposite effect to the above-mentioned 5TORE, and as explained in FIG. 4, it acts to transfer PPG (k) stored in the CMT 51 to the RAM 26 via the RAM 53. It is something. FIG. 19 shows a detailed flowchart 1 of subroutine 5T17 in FIG. 13 corresponding to 5ORT. In the same figure, 5T17-1 will have 5ORTL and 1
The external storage medium in which the process program group P PG (k) is stored is specified. Then 5T17
Moving to -2, it is checked whether PPQ(k) is actually stored in the external storage medium CMT51 specified in 5T17-1. If PPG (k) is not stored in ST17-2, the process moves to STI 7-3 and the operator is informed that it is not stored. If YES in 5T17-2, move to 5T17-4 and transfer one PPG from C to IT51 to RAM53.
Transfer data related to (k) (ROM52, C
by PU46). Next, move to ST17-5 and read from CMT51 to RAM53.
Check whether the transfer to is completed. If no, return to STI 7-4. If YES, move to 5T17-6, where each P P (
Transfer the data in i) to the RAM 26, which is the main memory. Next, at 5T17-7, l? , check the usual things, and if there is any abnormality, tell the operator in ST17-8. If there is an abnormality, the process moves to STI 7-9 and sets PP(i+1) as the next sequence. J, increment 1. Next (゛, move to 5T17-10 R△
~・Check whether the transfer from 153 to the computer 26 has been completed. If YES, it means that the 5ORH process is finished and $$$ is displayed. Also 5T17-1
If No at 0, the process returns to ST17-6 and this loop is repeated. Next, the VERi FY processing program shown in FIG. 4 will be explained. This processing program is used to display the process program group once stored in the RAM 26 on the CRT 29 for the operator to confirm. When $VERiFY is input, the message VERiFY NAME=:==:: is displayed, and by inputting the process name in the underlined part, the contents of the corresponding process program group PP G (k) are output. ,, An example of the display output is as follows. PROCESS NAME=N N2 PURGE TiME=1231 F 10 W N 2 = 55 H2P IJ RG E N2 PURGE FLOW N2=55 In this way, services (displays) are performed one after another, and the contents of N2 PURGE at the end of the sequence are output and the process ends. FIG. 20 shows a detailed flowchart 1F of subroutine 5T19 of FIG. 13. In the same figure, in 5T19-1, the target P
The first process program P P (k) of P G (k)
Set i). Next, the process moves to 5T19-2 and the set ppm is set to cell 1. Next, the process moves to 5T19-2 and checks the set sequence number i of P P (i). If it is i, move to ST19-3,
VFRi FYB1] Check the end of the program. If it is not completed, the program moves to G, i', 5T19-4, and if a non-existent sequence number appears, a warning is displayed to the operator. If YES in 5T19-2, the process moves to 5T19-5 and takes in the time data (sequence time) in the data of PP(i) into the CRT RAM 25. Then 5T19
Moving to -6, the time data is displayed on two CRTs. Next, in 5T19-7, the presence or absence of temperature data in the P P (i) data is checked, and if there is, 5T19-8
Then, the temperature data is displayed on the CRT 29. Next, in 5T19-9, the presence or absence of the flow rate data of the used gas is checked among the data of P P (i), and if there is, the flow rate data is displayed on the CRT 29 in 5T19-10. Next, the process moves to 5T19-11, and the next sequence PP (
For i+1), i is incremented from 1 to 1, and the process returns to the confluence point ①, and then goes to ST 1-2 described above and repeats 5T19-11 to 1Y. Next, the processing program D i AGNO3i S shown in FIG. 4 will be explained. $ When DiAGNO3iS and key personnel are used, the contents of the current process abnormality are serviced (
For example, as follows. Here, AO indicates whether it is a flow rate controller, A1 is the set flow rate, and A2 is the actual flow rate in the event of an abnormality. 14 is a flowchart showing details of subroutine 5T21 in FIG. 13. In (1) of the same figure, 5T21-1 checks whether there is an error registration. This error Ωtl is
) RAM26.
This is done by checking the error code registration area No. 55 ((3) in the same figure). If an error is registered in 5T21-1, the process moves to 5T21-2 and takes out the number of error registrations (K in (3) in the same figure), then each error code is taken in ST 21-3, and then taken out in 5T21-4. The detected error code is converted into a corresponding fault message and displayed on the CRT. Next, the process moves to 5T21-5 and the number of error registrations is decreased by one. Then, in 5T21-6, it is checked whether the number of registered errors (number of undisplayed errors) is zero, and if it is not zero, 5T2
Return to 1-3. Moreover, if it is zero, this processing program will be terminated. FIG. 21 (2) shows a self-diagnosis [fit! The presence or absence of an abnormal state is checked in 5T21-10. Items to be checked include temperature, flow rate,
This includes the supply voltage to various valve devices. 5T21-1
If there is an abnormality at 0, the process moves to 5T21-11 and a command necessary to release the abnormal state in the reactors R1, R2 or the equipment in their surrounding areas is issued. For example, this may be done by temporarily stopping the progression of the sequence itself. Then, at 5T21-21, an alarm is displayed to notify the operator. Then, at 5T21-13, the error code is registered in the corresponding memory area of the RAM 26. Next, the processing program of LISED TiME shown in FIG. 4 will be explained. (SED TiME is a service that provides the usage time of each reactor R1 and R2f up to the present time. If you enter $ LJSED TiME and key manually, it will be: Day Hour Minute Second RiGIIT US [TiHE = Lolo Lolo Lolo Lo It looks like this will be displayed on the CRT 29. Here, for example, I-E F T is R1, RrG+-r
r is R2. Fig. 22 shows the flowchart of the "second processing program" provided in the system program stored in the ROM 27'I, and the service content of USEDTiME in (previous) E is shown. is given as a summary of the execution of blue routines ST2 and ST4 in the same figure. In FIG. 22, when execution of the seconds processing program is instructed, in step 5TIS (the last S is
When the start switch of reactor R1 is turned on, the program moves to 5T2S and reduces the programmed sequence time for which the reaction process is to be executed in R1.
The shoulder line for subtraction is not shown). If the answer is NO in 5T1S or the processing in 5T2S is completed, then the process moves to 5T3S, and it is checked whether the start switch of R2 is ON or not. When turned on, the subtraction of the sequence time of R2 is performed in the same way as 5T2S.8 This seconds processing program is interrupted every second in the main system program in the ROM 24. There is. Next, the TESTffi program shown in FIG. 4 will be explained. The TEST function is a function used for maintenance in the control device according to the embodiment of the present invention. The 7687 functions are classified into 6 items, and each function can be called up and executed in an interactive manner. Each function will be explained below. ■ Operate the valve for EV function process control N A M E - ■■0 OPEN (Y, :) - N) =, ■
When O is input, the valve enters 0PEN operation. That is, with No-valve number O, the specified valve is 0PEN7i. The end of the 0PEN operation is ■O. At this time, the operated valve remains as it is. Subsequently, NAME= is output. CLO8EL, if there is a valve you want, NAME=■■0 OPEN (Y,:l:N)-■@ or Q end is NO=■O NAME= In CLO3E, the valve with the specified number remains closed. . Next, a practical example is shown. (example,) $ ■■O NAME=■■0 01] EN (Y, CN) -■ () or ONAME=■■○ 0PEN (Y, shout: N) -■O NAME= Call other functions ■MFv3 This is to operate the mass flow paper riser controller for functional process control. NAME=[Yes]■0 INPUT (Y, *N)= Asks whether you want to perform an input operation or an output operation. For input operation, input ■O. DATA=xx xx: Data early NO= Data at the time of input is serviced for only one minute by specifying sequential numbers. For output operation, input ■O or O. DATA = Flow rate 0 NO = Flow rate can be set by specifying sequential numbers. The end is ■O. (examp I e) $ TEST NAME=[Yes][F]0 NO=■0 DATA-■■O 15ρ specification (MFC5) NO=■0 DATA=■■■0 300CC specification (MFC8) NO=■O N A M E = [Yes] ■0 INPUT (Y, 5IGN) = ■O N○ = ■ 0 DATA = xx 1 minute service (MFC5) NO = ■0 DATA = × × 1 minute service (MFC8) NO = ■O NAME= ■CRT function All the characters of the character generator are serviced on the CRT display unit, and one page (80 characters x
Line 25> When the output is finished, CLEAR the page and exit J8゜NAME=◎■O is I] == [Sword N A M E = (l!! I function call ■LAMP function operation panel (R1, R2) Light up the second lamp, LED, and [31JZZE1 statement on the ill-paralysis control device panel] in sequence, and when all output is finished, perform CLEAR,
After repeating this procedure five times, this function is terminated. NAME=○■O Output service NAME= Call other functions 0801 Function switching SW1 Damper, R1 clamp, R1 lock, R1
Seal 4, R1 exhaust, R2 clamp, R20 hook, R2
0N10FF the solenoid valve used for seal and R2 exhaust. NAME=■■O ON (Y, *N)= Ask if you want to turn the valve ON or OFF. For ON operation, input ■O. The old OFF operation is ■ Enter O or O. Next, the ON/OFF operation of the specified valve is executed. ■ΔTC function When the ATC function is called, the system automatically enters the local level. This function is used for two-temperature tests, soaking tests, etc. NAME=■■0 BELL-JAR= Ask which bell jar to use (R1, R2>). If any characters other than ■■ are entered, it is determined that the R2 side will be used. Next, the gas system will be , the bell jar is switched to the N2 purge line, and the bell jar enters the operation of being sealed. When it is sealed, the exhaust valve is heard. At this time, emptying is not performed because it is an N2 purge. ?1 In other words, the system is It becomes possible to execute professional wrestling with the selected Verge Il. However, if the interlock upper I!? normal state is discovered, △TC [Noh is Ganzel]. This is a detailed flowchart for calculating the remaining time in the parallel operation shown in FIG. 4, and is one program in the system program stored in the ROM 24 in FIG. Check whether Star 1~Switch for furnace R1 is ON.If NO, turn 5T.
Move on to 7S. If YES, the process moves to 5T2S, where it is checked whether the other reactor R2 is already in process. If it is already being executed, move to subroutine 5TS3 and hold IF of R1! Calculate 1 interval. On the other hand, No.1j in 5T2S:t) If the start switch of ChiR2 is not turned on yet, 5T4S
Move to , check again whether R1 is running the process,
If it is already running, move to 5T7S. ST7! If NO in IS, the process moves to 5T5S and a process control flag is set to execute the R1 process. Next, in 5T63, P P (i), that is, the process program group P P to be executed in R1 from now on
The sequence time of the first process program P P (i) of G is set to zero. Next, move on to 5T7S. Steps 5T7S to 5T12S are 5T1S-8T7S by replacing R2 and R1. 5T2S-8T8S, 5T3S-+5T9S. 5T4S-+ST10S1ST5S-8T11S, 5T
As in 6S-8T128, the processing contents correspond to each other. Up to now, we have explained Figs. 1 to 23, but in the above explanation, the reactor R1 or R2 is explained as having an induction heating coil installed, and the effect of the heating coil power supply in parallel operation is explained. An example of how to use it was explained therein. However, when applying the control system tL according to the present invention, it is not limited to the reading heating method, but can also be applied to, for example, a lamp heating method (Fig. 24). Figure 21!I shows a schematic configuration of a lamp heating type reactor. In the figure, 201 is a supply section for various gases introduced into the reactor 207, 202 and into the reactor 207 as shown by the arrow.In the reactor 207, a No. 209, which is formed so that its diameter increases downward, is rotatable from above. A semiconductor substrate 208 on which vapor phase growth is to be performed is placed on the outer circumferential surface of the semiconductor substrate 208.A signal from the temperature sensor 210 is supplied to a temperature controller 204 via a line 203. There is.Con 1~
The roller 204 gives a control signal to the power converter 205, and the power converter 205 supplies power to the lamps 20G arranged around the outer wall of the furnace 207, so that the light emitted by the lamp 206 is transmitted to the quartz, etc. The semiconductor substrate 208 is reached by passing through the outer wall made of. This lamp heating method heats the semiconductor substrate 208 directly from the lamp through the outer wall, and is also characterized in that it consumes less power than the induction coil method. By connecting multiple reactors using the lamp heating method to various gas sources, each reactor can perform processes independently without depending on the process status of the other reactors. It is possible to accomplish this. [Effects of the Invention] As is clear from the embodiments described above, according to the present invention,
Process parameters in the sequence process, such as sequence time, gas type and flow rate, and dryness, are set as units of the process program, and these process programs are combined appropriately to create a process program that corresponds to one vapor phase growth. [] Since it achieves a 1'1 Gram n process and enables automatic operation of the τ equipment, the gas flow rate and It is possible to significantly reduce the operator's manual work and judgment factors regarding the determination of the temperature condition f[, and to provide an apparatus with excellent workability. Furthermore, in the apparatus of the present invention, the process program can be called up unit by unit according to the operator's request and displayed on the display means, making it possible to modify each process parameter and executing the contents in real time. It is possible to respond to the various operations required by the system as a sequence process adapted to actual physical and chemical conditions, and the contents can be grasped immediately. Therefore, according to the apparatus of the present invention, it is possible to programmably and quickly change the process parameters and meter condition settings in the preparation stage of the optimal manufacturing process, which only improves the yield of products with stable quality. In addition, the operating rate of the apparatus is increased, all the problems of the conventional DDC control system using a computer can be overcome, and a semiconductor vapor phase growth apparatus with extremely excellent control performance can be provided. In particular, in the apparatus of the present invention, gas supply valves are provided in the pipes communicating with various gas sources, and mass flow valves are provided in the pipes communicating with the reaction channels, as means for controlling the type of gas and its flow rate. Accordingly, gas supply control can be smoothly achieved. In addition, the temperature inside the reactor can be effectively controlled by installing an induction heating coil, which is energized by a temperature setting switch. Receives 1 gram group of blocks stored in the storage medium
By providing an input device for inputting process programs 8 yen, the versatility of the automatic control system 1 will be increased and the performance of the control system 2 will be improved. ] The vine effect is cedar! Please, people.

[Brief explanation of the drawing]

FIG. 1 is a diagram explaining the operation of a conventional vapor phase growth tIl apparatus, FIG. 2 is a schematic configuration diagram of an embodiment of the apparatus of the present invention, and FIG.
The figure is a block diagram explaining the flow of control information in the control system of Figure 2, Figure 4 is a block diagram (14 diagram) of the vapor phase growth control system according to the present invention, and Figure 5 is a panel diagram of the control device of Figure 2. Detailed front view, Figure 6 is a section view of the reactor type with built-in induction coil, and Figure 7 is a system diagram of the pipe network connecting the reactor shown in Figure 6 and various gas supply sources. , Fig. 8 is a system diagram showing the relationship between the mass flow meter installed between the flow rate controller and the control device to detect the gas flow G and its surroundings, and Fig. 9 shows the flow υ in the pipe network. Fig. 10 is a time chart when reactors R1 and R2 are operated in parallel, Fig. 11 is a block diagram of the time acting section during parallel operation, and Figs. ) is a format diagram explaining the data structure of a process program and a group of process programs, FIG. 13 is a flowchart showing the processing process of the system program of this system,
Figure 14 is a detailed flowchart of subroutine ST3 in Figure 13, and Figure 15 is a detailed flowchart of subroutine ST7 in Figure 13.
16 is a detailed flowchart of subroutine 5T10 in FIG. 13, FIG. 17 is a detailed flowchart of subroutine 5T13 in FIG. Detailed flowchart 1-1 FIG. 19 is a detailed flowchart of subroutine 5T17 in FIG. 13, FIG. 20 is a detailed flowchart of subroutine 5T19 in FIG. Detailed flowchart 1., Figure 22 is the subroutine 5T2 of Figure 13.
Flowchart of second processing program related to 3, 2nd
FIG. 3 is a flowchart for calculating the waiting time, and FIG. 24 is a diagram showing the configuration of the main parts of a lamp heating type reactor. 11... High frequency generation section 12.13... Reactor 1
4...Control unit 1G...Twist drive unit 21.
・・CPU 22・・Data bus 23・
... i10 bus 24 ... storage section 25 ... CR
T RAM 26...temporary storage section 27...RO
M 28, 49...Interface 29...CRT 30.32...Input module 31...Keyboard 34.36...Output L joule 35...Output section 37...Gas valves 39.
...Relay drive section 40...Motor and valve 41.
...D/A conversion module 43...A/D conversion module 46...CPU 47...Data highway 48...Data bus 45.50...High speed memory data transfer unit 51...Magnetic Tape 52...ROM53...RAM
54...i10 bus 61...Display device 62...Cassette tape mounting section 63...Key manual device 64...Temperature control section 67
...Data input canister 71...Bottom plate 72...Gas introduction lower 3
...Exhaust hole 74...Pipe line 75...+'
jt? Pig 76... Rotating member 77... Motor 78... Cover 79... Induction heating coil 80... Insulating plate 81... Bolt 82.8
3... Connection joint part 84... Quartz layer 85... First
Stainless steel layer 86...Second stainless steel layer 87...Brim 88...Clamp member 90...Ceiling cover 91...
- Wafer 92... Observation window 93... Temperature detection window 101, 102.103.104.105... Gas chamber 106... Bubbling chamber 121... AID converter 122... Analog multiplexer 123. ...D/A conversion 7! :1131...Register 132.133...Counter \, -1no/Figure 9 O I40 C force D ''-Figure 12 (A) (B) (1 (R2), + 161 Q /+Figure 17 O Old figure 19 Ribud 20 r2; t-22 figure, t24 figure

Claims (1)

[Claims] (1) A reactor that performs vapor phase growth on a substrate such as silicon, means for heating the substrate, and a pipe network that connects various gas sources necessary for vapor phase growth and the reactor. , a valve device provided on the pipe network to form the pipe network so as to guide desired amounts of the various gases to the reactor; and a valve device for controlling on/off or the degree of opening of the valve device. A semiconductor vapor phase growth apparatus comprising a signal and a control device that provides a signal to control the heating means, wherein the control device is necessary for each actual sequence process related to one vapor phase growth in the furnace. information regarding the sequence time to be supplied, the type and flow rate of one or more gases to be supplied during the sequence time, and the temperature to be achieved in the furnace during the sequence time, corresponding to each of the sequence processes. a first memory means for forming a process program that can be stored as parameter data, and storing one or more process program groups corresponding to the one vapor phase growth, each of which is made up of a plurality of process programs; , a key input means, a display means for displaying the contents of the process program in response to the key input means, and a display means for sequentially decoding each process program in the process program group and transmitting each of the process programs to the valve device and the heating means. a second storing a decoding processing program for forming a control signal and a modification processing program for modifying the contents of the process program displayed on the display means;
a memory means, and a gas supply provided in each of the conduits communicating with various gas sources for controlling the type of gas and its flow rate based on the data of the process program in the process program group sequentially decoded by the second memory means. A temperature to be achieved in the reactor is controlled based on data of each process program in the process program group sequentially decoded by a valve and a mass flow valve installed in a pipe communicating with the reactor and the second memory means. A temperature setting switch connected to a power source to control the energization of the induction heating coil, and a process program group input device that accepts a process program group stored in an external storage medium such as a magnetic tape or a magnetic card. A semiconductor vapor phase growth apparatus comprising: