JPS63124006A - Embedded light guide and its manufacture - Google Patents
Embedded light guide and its manufactureInfo
- Publication number
- JPS63124006A JPS63124006A JP26973986A JP26973986A JPS63124006A JP S63124006 A JPS63124006 A JP S63124006A JP 26973986 A JP26973986 A JP 26973986A JP 26973986 A JP26973986 A JP 26973986A JP S63124006 A JPS63124006 A JP S63124006A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- core layer
- buried
- softening temperature
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 102
- 239000012792 core layer Substances 0.000 claims abstract description 57
- 239000000872 buffer Substances 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005253 cladding Methods 0.000 claims description 46
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims 7
- 238000000034 method Methods 0.000 abstract description 13
- 239000010408 film Substances 0.000 abstract description 10
- 239000002994 raw material Substances 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 4
- 238000013146 percutaneous coronary intervention Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000567 combustion gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002655 kraft paper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910006113 GeCl4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の産業上の利用分野〕
本発明は埋込み光導波路およびその製造方法、光通信や
光情報処理の分野で用いられる光集積回路の基本技術で
ある光導波路とその製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field of the Invention] The present invention relates to a buried optical waveguide and its manufacturing method, and an optical waveguide and its manufacturing method, which is a basic technology of optical integrated circuits used in the fields of optical communication and optical information processing. This relates to a manufacturing method.
従来、文献（昭和６０年度電子通信学会半導体材料部門
全国大会論文集４３８ Ｐｉ −２５３’）に示す如く
、火炎直接堆積法によって極低損失の埋込み光導波路が
形成されている。Conventionally, as shown in the literature (1985 IEICE Semiconductor Materials Division National Conference Proceedings 438 Pi-253'), a buried optical waveguide with extremely low loss has been formed by a flame direct deposition method.
第１図は、その製造方法および構造の概略を示したもの
である。第１図（ａ）は火炎直接堆積法によって製作し
た二次元先導波膜の断面図であり、１はＳｉ基板、２は
バッファ層、３はコア層である。FIG. 1 shows an outline of its manufacturing method and structure. FIG. 1(a) is a cross-sectional view of a two-dimensional leading wave film manufactured by a flame direct deposition method, in which 1 is a Si substrate, 2 is a buffer layer, and 3 is a core layer.
コア層３はあらかじめ定めた値だけバッファ層２に比べ
屈折率が高くなるように、原料中のドーピングガスＴｉ
Ｃ１ａやＧｅＣ１ａの濃度を高めである。Doping gas Ti in the raw material is used in the core layer 3 so that the refractive index is higher than that of the buffer layer 2 by a predetermined value.
The concentration of C1a and GeC1a is high.
次に第１図（ｂ ）はフロロカーボン系ガスを反応ガス
とした反応性イオンエツチング法によってコア層３の不
要部分を除去して製作した三次元コア層３”を持つリッ
ジ状光導波路の断面を示した。Next, Fig. 1(b) shows a cross section of a ridge-shaped optical waveguide with a three-dimensional core layer 3'' manufactured by removing unnecessary portions of the core layer 3 using a reactive ion etching method using fluorocarbon gas as a reactive gas. Indicated.
第１図（Ｃ）はこの第１図（ｂ ）に示す先導波路上に
さらに埋込みクラフト層４を形成した埋込み光導波路の
断面図である。FIG. 1(C) is a sectional view of a buried optical waveguide in which a buried craft layer 4 is further formed on the leading waveguide shown in FIG. 1(b).
火炎直接堆積法で形成されるのはガラス微粒子であるた
め、光を導波する透明ガラスを得るためには、このガラ
ス微粒子を加熱し、焼結する必要がある。したがって、
前記第１図（Ｃ）のように埋込みクラッド層４で全体を
覆う場合、このクラフト層４も透明ガラス化する必要が
ある。しかしながら、製作したコア層３等の変形を抑え
るためには埋込みクランド層４は、前記バッファ層２お
よびコア層３に比べ、より低軟化温度のガラスとする必
要を生じる。Since glass particles are formed by the flame direct deposition method, it is necessary to heat and sinter the glass particles in order to obtain transparent glass that guides light. therefore,
When the entire structure is covered with the buried cladding layer 4 as shown in FIG. 1(C), this kraft layer 4 also needs to be made into transparent glass. However, in order to suppress deformation of the manufactured core layer 3 and the like, the buried ground layer 4 needs to be made of glass having a lower softening temperature than the buffer layer 2 and the core layer 3.
一方、光導波路設計の観点から、通常埋込みクランド層
４はバッファ層２との屈折率を等しく、具体的には比屈
折率差を０．０１％以下に抑える必要がある。したがっ
て、前記埋込みクラッドｒｆｉ４はコア層３ないしバッ
ファ層２より低い軟化温度を有し、かつバッファ層２と
同一ないし近似した屈折率を有することが要求されるこ
とになる。On the other hand, from the viewpoint of optical waveguide design, it is usually necessary for the buried ground layer 4 to have the same refractive index as that of the buffer layer 2, and specifically to suppress the relative refractive index difference to 0.01% or less. Therefore, the buried cladding RFI 4 is required to have a softening temperature lower than that of the core layer 3 or the buffer layer 2, and a refractive index that is the same as or similar to that of the buffer layer 2.
このようにバッファ層２と埋込みクラフト層４との軟化
温度を変え、かつ屈折率を等しくするため、原料ガス中
のドーピングガスであり、共に軟化温度を下げる効果を
持ち、屈折率を上げる効果を持つＰＣＩ ３と屈折率を
下げる効果を持つＢＣＩ ３との濃度を精密にコントロ
ールする必要があり、十分な再現性が得られない問題が
あった。In this way, it is a doping gas in the raw material gas that changes the softening temperature of the buffer layer 2 and the buried kraft layer 4 and makes the refractive index the same, and both have the effect of lowering the softening temperature and increasing the refractive index. It is necessary to precisely control the concentrations of PCI 3, which has the effect of lowering the refractive index, and BCI 3, which has the effect of lowering the refractive index, and there has been a problem that sufficient reproducibility cannot be obtained.
また、良質なガラス膜を得るためのドーピングガスの量
については限度があり、ある程度のコア層の変形や屈折
率差の変動は避けられないのが現状であった。Furthermore, there is a limit to the amount of doping gas required to obtain a glass film of good quality, and the current situation is that deformation of the core layer and fluctuation of the refractive index difference to some extent are unavoidable.
本発明は、このコア層の変形を抑え、バッファ層とクラ
ッド層を同一組成のガラスとする埋込み先導波路を提供
するものである。The present invention provides a buried guiding waveguide in which deformation of the core layer is suppressed and the buffer layer and the cladding layer are made of glass having the same composition.
本発明は、火炎直接堆積法による埋込み光導波路製作に
おいて、三次元コア層形成後、埋込み工程にはいる前に
、高い軟化温度の薄膜クラッド層を設けることを最も主
要な特徴とする。The main feature of the present invention is to provide a thin film cladding layer with a high softening temperature after forming a three-dimensional core layer and before entering the embedding process in manufacturing a buried optical waveguide by a flame direct deposition method.
従来の技術では、この薄膜クラッド層を形成していなか
った。In conventional technology, this thin film cladding layer was not formed.
第２図は本発明の構成を示す一具体例であって、第２図
（ａ ）は第１図（ｂ ）に示した三次元コア層を持つ
リッジ状先導波路上に薄膜クラッド層を形成した断面図
であり、５は薄膜クラッド層である。第２図（ｂｌは本
発明による埋込み先導波路の一具体例の断面図を示す。FIG. 2 shows a specific example of the structure of the present invention, and FIG. 2(a) shows a thin film cladding layer formed on a ridge-shaped leading waveguide having a three-dimensional core layer shown in FIG. 1(b). 5 is a cross-sectional view showing a thin film cladding layer. FIG. 2 (bl) shows a cross-sectional view of one embodiment of a buried guide waveguide according to the present invention.
この図より明らかなように、本発明による埋込み光導波
路は、基板１上にバッファ層２が設けられ、さらにこの
バッファ層２上に、バッファ層２より屈折率が高い三次
元コア層３゛が形成されている。そして、上記三次元コ
ア層３゛には、この３次元コア層３゛より軟化温度の高
い薄膜クラッド層５が積層され、次いで、従来のように
埋込みクラッド層４が設けられた構造になっている。As is clear from this figure, in the buried optical waveguide according to the present invention, a buffer layer 2 is provided on a substrate 1, and a three-dimensional core layer 3' having a refractive index higher than that of the buffer layer 2 is further provided on this buffer layer 2. It is formed. Then, a thin film cladding layer 5 having a higher softening temperature than the three-dimensional core layer 3' is laminated on the three-dimensional core layer 3', and then a buried cladding layer 4 is provided as in the conventional structure. There is.
前記薄膜クランド層５は、この構成例においてはバッフ
ァ層２の上面も覆っているが、前記三次元コア層３゛を
保護するためのものであるから、前記三次元コア層３゛
を覆っていれば足りることは明らかである。前述のよう
に、薄膜クラッド層５はコア層３′を熱的に保護するも
のであるため、埋込みクランド層６を形成するときに、
充分な厚さを有し、かつ光損失を増加させないためには
なるべく薄い方が望ましい。三次元コア層３′の断面積
をＳとしたとき、前記三次元コア層３′を覆う薄膜クラ
ツＦ １５ （７）断面Ｍｓ’ ハ、Ｓ’＝ＩＳ／６〜
２Ｓ（７）［ｉｌであるのが好ましい、Ｓ”がＩＳ／６
より小さいと、前記薄膜クラッド層５がコア層３′を保
護できない虞があり、一方２Ｓより大きい”と光損失が
大きくなる虞を生じるからである。The thin film ground layer 5 also covers the upper surface of the buffer layer 2 in this configuration example, but since it is for protecting the three-dimensional core layer 3', it does not cover the three-dimensional core layer 3'. It is clear that this is sufficient. As mentioned above, since the thin film cladding layer 5 thermally protects the core layer 3', when forming the buried cladding layer 6,
In order to have sufficient thickness and not increase optical loss, it is desirable that it be as thin as possible. When the cross-sectional area of the three-dimensional core layer 3' is S, the thin film covering the three-dimensional core layer 3' is F15 (7) Cross section Ms', S'=IS/6~
2S(7)[il, preferably S” is IS/6
If it is smaller, there is a risk that the thin film cladding layer 5 will not be able to protect the core layer 3', while if it is larger than 2S, there is a risk that optical loss will increase.
この薄膜クラッド層５は前述のように、三次元コア層３
゛を保護するものであるため、前記コア層３゛より高軟
化温度のものが使用されるが、バッファ層２の保護の面
などを考慮すれば、バッファ層２および埋込みクラッド
層４よりも高軟化温度であるのが好ましいのは明らかで
ある。This thin film cladding layer 5 is formed by the three-dimensional core layer 3 as described above.
A material with a softening temperature higher than that of the core layer 3 is used because it protects the core layer 3. Obviously, the softening temperature is preferred.
このような埋込み先導波路を製造する場合、まず、基板
１上にバッファ層２を形成し、これに前記バッファ層２
より屈折率の高いコア層３を形成する（第１図参照）。When manufacturing such a buried guided waveguide, first, a buffer layer 2 is formed on a substrate 1, and then the buffer layer 2 is
A core layer 3 having a higher refractive index is formed (see FIG. 1).
その後、反応性イオンエツチング、ウェットエツチング
などのエツチング法等の技術を使用して、前記コア層３
を三次元コア層３゛とを形成する。Thereafter, the core layer 3 is etched using an etching technique such as reactive ion etching or wet etching.
A three-dimensional core layer 3 is formed.
前述のバッファ層２あるいはコア層３を形成する方法は
、本発明において基本的に限定されるものではなく、周
知の種々の方法を使用することができる。例えば５ｉＣ
１４、ＴｉＣ１ａ 、ＧｅＣｌ４ 、ＰＣＩ ｓ、ＢＣ
Ｉ ｓ等を原料ガスとし、Ｈ！および０黛を燃焼ガスと
し、ガラス微粒子を形成後、加熱によって透明ガラス膜
を形成する火炎直接堆積法によって形成することが可能
である。また、スパッタ法あるいはＣＶＤ法なども使用
できる。The method of forming the buffer layer 2 or the core layer 3 described above is not fundamentally limited in the present invention, and various well-known methods can be used. For example, 5iC
14, TiC1a, GeCl4, PCIs, BC
Is etc. are used as raw material gas, H! It is possible to form the transparent glass film by a flame direct deposition method in which a transparent glass film is formed by heating after forming glass fine particles using 0 and 0 carbon as a combustion gas. Furthermore, a sputtering method or a CVD method can also be used.
次ぎに、前記三次元コア層３゛に薄膜クラッド層５を形
成する。Next, a thin film cladding layer 5 is formed on the three-dimensional core layer 3'.
この薄膜クラッド層５は前述のように、三次元コア層３
°を覆うように形成すればよいが、第２回申）のように
バッファ層２まで覆うようにするのが好ましい。バッフ
ァ層２の保護にもなるからである。This thin film cladding layer 5 is formed by the three-dimensional core layer 3 as described above.
It may be formed so as to cover the buffer layer 2, but it is preferable to cover it up to the buffer layer 2 as described in the second article). This is because it also protects the buffer layer 2.
この薄膜クラッド層５の形成方法としては、前記三次元
クラッド層３゛が熱的に破壊、変形されるないような温
度で行う必要がある。このため、前記三次元クラッド層
３゛の軟化温度よりも低い温度で形成される方法を選択
する必要がある。このような方法は、本発明において基
本的に限定されるものではない。たとえば、スパッタ法
、ＣＶＤ法などを使用して薄膜クラフト層５を形成する
。The method for forming the thin film cladding layer 5 must be carried out at a temperature that will not thermally destroy or deform the three-dimensional cladding layer 3'. Therefore, it is necessary to select a method in which the three-dimensional cladding layer 3' is formed at a temperature lower than the softening temperature. Such a method is not fundamentally limited in the present invention. For example, the thin film craft layer 5 is formed using a sputtering method, a CVD method, or the like.
この薄膜クラッド層５は、前述のように三次元コア層３
゛より軟化温度の高い石英系ガラス組成の薄膜である。This thin film cladding layer 5 is a three-dimensional core layer 3 as described above.
゛It is a thin film made of quartz glass with a higher softening temperature.
このように、薄膜クラッド層５を形成した後、火炎直接
堆積法によって埋込みクラッド層４を形成する。After forming the thin film cladding layer 5 in this manner, the buried cladding layer 4 is formed by a flame direct deposition method.
実施例
５ｉＣＩａ 、ＴｉＣＩｔ ％ ＧｅＣ１ａ 、ＰＣＩ
ｓ 、ＢＣＩ ａ等を原料ガスとし、Ｈ２および０２
を燃焼ガスとし、ガラス微粒子を形成後、加熱によって
透明ガラス膜を形成する火炎直接堆積法によって前記基
板１上にバッファ層２、コア層３を形成した。その後、
反応性イオンエツチング法またはウェットエツチング法
よって、コア層３の不要部分を除去し、三次元コア層３
”とした。Example 5 iCIa, TiCIt% GeCla, PCI
s, BCI a, etc. as raw material gas, H2 and 02
A buffer layer 2 and a core layer 3 were formed on the substrate 1 by a flame direct deposition method in which a transparent glass film was formed by heating after forming glass particles using the following as a combustion gas. after that,
Unnecessary portions of the core layer 3 are removed by reactive ion etching or wet etching to form a three-dimensional core layer 3.
”.
この実施例においては、バッファ層２の厚みは２０μ鋼
、コア層３゛の厚さ、幅は８μ清とし、またバッファ層
２の屈折率は純粋の石英と同一、コア層３′の比屈折率
差は０．３％とした。In this example, the thickness of the buffer layer 2 is 20μ steel, the thickness and width of the core layer 3′ are 8μ, and the refractive index of the buffer layer 2 is the same as that of pure quartz, and the relative refraction of the core layer 3′ is 8μ. The rate difference was set at 0.3%.
薄膜クラッド層５は、石英板をターゲットとしＡｒと０
２ガスを用いたＲＦスパッタ法またはＣＶＤ法によって
形成した。厚みは２μ隅とした。このようにして形成し
た薄膜クラッド層５は、屈折率は石英と同一でまた軟化
温度は極めて高くなる。−方、火炎直接堆積法で形成し
たバッファ層２、コア層３は良質のガラス膜を得るため
Ｐ、Ｂをドーピングしてあり、軟化温度は石英に比べ低
くなっている。The thin film cladding layer 5 is made of Ar and 0 with a quartz plate as a target.
It was formed by RF sputtering or CVD using two gases. The thickness was 2μ at the corner. The thin film cladding layer 5 formed in this manner has the same refractive index as quartz and has an extremely high softening temperature. - On the other hand, the buffer layer 2 and core layer 3 formed by the flame direct deposition method are doped with P and B in order to obtain a high quality glass film, and their softening temperature is lower than that of quartz.
第２回申）は第１図（０）に示したのと同様の工程で、
第２図（ａｌに示す先導波路に埋込みクラッド層を形成
したものであり、６は埋込みクラッド層である。The second stage) is the same process as shown in Figure 1 (0),
A buried cladding layer is formed in the leading waveguide shown in FIG. 2 (al), and 6 is a buried cladding layer.
第１図に示す従来技術とは異なり、本実施例では、埋込
みクラッド層を形成する際の原料ガス組成はバッファ層
を形成するときのと同一とした。この埋込みクラッド層
６は火炎直接堆積法によって形成し、透明ガラス化した
ものである。この埋込みクラッド層６を加熱して透明化
するとき、従来においては、その温度ではバッファ層２
、コア層３が軟化してしまう。しかし本発明においては
、より高軟化温度の薄膜クラッド層５で保護されている
ので形状変化を起こさなかった。Unlike the prior art shown in FIG. 1, in this example, the raw material gas composition when forming the buried cladding layer was the same as when forming the buffer layer. This buried cladding layer 6 is formed by a flame direct deposition method and is made into transparent glass. When heating this buried cladding layer 6 to make it transparent, conventionally, at that temperature, the buffer layer 2
, the core layer 3 becomes soft. However, in the present invention, the shape did not change because it was protected by the thin film cladding layer 5 having a higher softening temperature.
また、バッファ層２、埋込みクラッド層６はまったく同
一の組成でよく、膜の屈折率や厚みの制御性、再現性は
向上した。さらに、コア原料として比較的多量のＴ、１
ｃ１４あるいはＧｅＣ１ａを添加して形成された光導波
膜の比屈折率差を０．５〜２％と大きく設定する場合に
、コア層３の軟化温度が著しく低下するので、コアの形
状変形を引き起こさず埋込みクラッド層４を形成するに
は、従来技術では埋込みクラフト層４に多量のＰＣＩ
３、ＢＣＩ ３を加える必要があり、良質のガラス膜が
得られないことや、耐候性が劣化する問題があったが、
本発明のようにコア層３を一旦薄膜クラッド層５で保護
し、その後バッファ層２と同一成分の埋込みクラッド層
６で埋込んだ場合には、コアｌ１ｉ３の変形はまったく
なかった。Further, the buffer layer 2 and the buried cladding layer 6 may have exactly the same composition, and the controllability and reproducibility of the refractive index and thickness of the film are improved. Furthermore, a relatively large amount of T,1 as a core raw material
When the relative refractive index difference of the optical waveguide film formed by adding C14 or GeC1a is set to a large value of 0.5 to 2%, the softening temperature of the core layer 3 is significantly lowered, so that deformation of the core shape is not caused. In order to form the buried cladding layer 4, in the conventional technology, a large amount of PCI is added to the buried cladding layer 4.
3. It was necessary to add BCI 3, which caused problems such as not being able to obtain a high-quality glass film and deteriorating weather resistance.
When the core layer 3 was once protected with the thin film cladding layer 5 and then buried with the buried cladding layer 6 having the same composition as the buffer layer 2 as in the present invention, the core l1i3 was not deformed at all.
以上説明したように、火炎直接堆積法を用いて埋込み先
導波を形成する場合、本発明ではコア層やバッファ層に
比べ十分軟化温度の高い薄膜クラッド層を形成した後、
埋込みクラッド層を形成するので、たとえコア層やバッ
ファ層の軟化温度が埋込みクラッド層に等しいか低くて
も、コア層の変形を抑えることができ、また場合によっ
てはバッファ層とクラッド層の組成を同一にできるので
、寸法や屈折率差などの設計精度や再現性が向上する。As explained above, when forming a buried leading wave using the flame direct deposition method, in the present invention, after forming a thin film cladding layer whose softening temperature is sufficiently higher than that of the core layer and buffer layer,
Since a buried cladding layer is formed, deformation of the core layer can be suppressed even if the softening temperature of the core layer and buffer layer is equal to or lower than that of the buried cladding layer, and in some cases, the composition of the buffer layer and cladding layer can be changed. Since they can be made the same, design accuracy and reproducibility of dimensions, refractive index differences, etc. are improved.
さらに、埋込み導波路の上に、また別の先導波路を形成
する多層光導波路の実現において、各層のクラッド層、
コア層、バッファ層の組成を同一にでき、製作プロセス
の簡単化が図れる利点がある。Furthermore, in realizing a multilayer optical waveguide that forms another guiding waveguide on top of the buried waveguide, the cladding layer of each layer,
This has the advantage that the core layer and buffer layer can have the same composition, which simplifies the manufacturing process.
第１図は従来の埋込み先導波路の構造および製作方法を
示した図、第２図は本発明の実施例を示す図である。
１ ・・・ｓｉＭ板、２・・・パフフグ層、３・・・コ
ア層、３゛・・・三次元コア層、４・・・埋込みクラッ
ド層、５・・・薄膜クラッド層、６・・・埋込みクラッ
ド層FIG. 1 is a diagram showing the structure and manufacturing method of a conventional buried guiding waveguide, and FIG. 2 is a diagram showing an embodiment of the present invention. 1...SiM board, 2...Puff puffer layer, 3...Core layer, 3゛...Three-dimensional core layer, 4...Embedded cladding layer, 5...Thin film cladding layer, 6...・Embedded cladding layer
Claims (2)
該バッファ層に比べ、屈折率の高い石英系ガラス組成よ
りなる三次元コア層を備え、該コア層を覆うように、該
コア層より高い軟化温度を有する石英系ガラス組成より
なる薄膜クラッド層を設け、さらに石英系ガラス組成よ
り成る埋込みクラッド層で覆い埋め込んだことを特徴と
する埋込み光導波路。(1) A buffer layer made of a silica-based glass composition and a three-dimensional core layer made of a silica-based glass composition having a higher refractive index than the buffer layer are provided on the substrate, and A buried optical waveguide characterized in that a thin film cladding layer made of a silica-based glass composition having a high softening temperature is provided, and the buried optical waveguide is further covered and embedded with a buried cladding layer made of a silica-based glass composition.
よび三次元コア層を形成し、該コア層を覆うように、前
記コア層よりも軟化温度の高い石英系ガラス組成の薄膜
クラッド層を該コア層の軟化温度より低い温度で形成し
、次いで火炎直接堆積法によって、石英系ガラス組成の
埋込みクラッド層を形成することを特徴とする埋込み光
導波路の製造方法。(2) A buffer layer and a three-dimensional core layer made of a silica-based glass composition are formed on the substrate, and a thin film cladding layer made of a silica-based glass composition whose softening temperature is higher than that of the core layer is formed to cover the core layer. 1. A method of manufacturing a buried optical waveguide, comprising forming the buried optical waveguide at a temperature lower than the softening temperature of the core layer, and then forming a buried cladding layer having a silica-based glass composition by a flame direct deposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61269739A JP2532071B2 (en) | 1986-11-14 | 1986-11-14 | Embedded optical waveguide and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61269739A JP2532071B2 (en) | 1986-11-14 | 1986-11-14 | Embedded optical waveguide and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63124006A true JPS63124006A (en) | 1988-05-27 |
| JP2532071B2 JP2532071B2 (en) | 1996-09-11 |
Family
ID=17476485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61269739A Expired - Lifetime JP2532071B2 (en) | 1986-11-14 | 1986-11-14 | Embedded optical waveguide and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2532071B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6915055B2 (en) | 2003-03-28 | 2005-07-05 | Fujitsu Limited | Optical waveguide, fabrication method therefor and optical waveguide device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS552263A (en) * | 1978-06-20 | 1980-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of optical guide circuits |
| JPS578506A (en) * | 1980-06-18 | 1982-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Formation of optical guide |
-
1986
- 1986-11-14 JP JP61269739A patent/JP2532071B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS552263A (en) * | 1978-06-20 | 1980-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of optical guide circuits |
| JPS578506A (en) * | 1980-06-18 | 1982-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Formation of optical guide |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6915055B2 (en) | 2003-03-28 | 2005-07-05 | Fujitsu Limited | Optical waveguide, fabrication method therefor and optical waveguide device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2532071B2 (en) | 1996-09-11 |
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