JPS6292345A - Resin seal type semiconductor device - Google Patents
Resin seal type semiconductor deviceInfo
- Publication number
- JPS6292345A JPS6292345A JP23268385A JP23268385A JPS6292345A JP S6292345 A JPS6292345 A JP S6292345A JP 23268385 A JP23268385 A JP 23268385A JP 23268385 A JP23268385 A JP 23268385A JP S6292345 A JPS6292345 A JP S6292345A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- frame
- semiconductor device
- insulating substrate
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電気絶縁基板に半導体ペレットを取付け、熱
硬化性樹脂をボッティングする構造の半導体装置におけ
る封止部の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a structure of a sealing part in a semiconductor device having a structure in which a semiconductor pellet is attached to an electrically insulating substrate and a thermosetting resin is potted.
従来、電気絶縁基板を用いた樹脂封止型半導体装置にお
ける樹脂封止は、熱硬化性樹脂をボッティングして行な
われることが多い。その際、封止用樹脂の流れどめに樹
脂枠が多く用いられていた。Conventionally, resin sealing in a resin-sealed semiconductor device using an electrically insulating substrate is often performed by potting a thermosetting resin. At that time, resin frames were often used to stop the flow of sealing resin.
樹脂枠は、封止用樹脂の流れ出しをとめることを要求さ
れていたので、材料には、安価で加工性の良い樹脂、例
えば打ち抜き加工用樹脂積層板や、塩化ビニール等熱可
塑性樹脂が一般に用いられてきた。The resin frame was required to stop the flow of the sealing resin, so cheap and easily processable resins such as resin laminates for punching and thermoplastic resins such as vinyl chloride were generally used as materials. I've been exposed to it.
一般に安価で加工性の良い樹脂は、封止用樹脂に比べ、
耐湿性、耐熱性等が劣るものが多い。そのため信頼性の
向上を要求されつつある今日に於いて、樹脂枠は、前記
樹脂封止型半導体装置において信頼性についてほとんど
貢献をしていないのが現状である。In general, resins that are inexpensive and have good processability are compared to sealing resins.
Many have poor moisture resistance, heat resistance, etc. Therefore, in today's world where there is a growing demand for improved reliability, the resin frame currently makes little contribution to the reliability of the resin-sealed semiconductor device.
電気絶縁基板を用いた樹脂封止型半導体装置の信頼性、
特に耐湿性を改善するためには封止用樹脂の耐湿性を改
善することは勿論、樹脂枠の耐湿性も改善する必要があ
る。一般に湿気による半導体装置の劣化は、半導体ペレ
ットと封止樹脂との間にできた隙間に水のフィルムが生
成されて、その水が半導体ペレット上の配線や素子を構
成する金属を侵食するからであるといわれている。Reliability of resin-encapsulated semiconductor devices using electrically insulating substrates,
In particular, in order to improve the moisture resistance, it is necessary to improve not only the moisture resistance of the sealing resin but also the moisture resistance of the resin frame. In general, semiconductor devices deteriorate due to moisture because a film of water is formed in the gap between the semiconductor pellet and the sealing resin, and this water corrodes the wiring on the semiconductor pellet and the metals that make up the elements. It is said that there is.
封止用樹脂と半導体ペレットとの界面にそれらの材料間
の熱膨張係数の相違から隙間ができたとしても、浸入し
た水分の量が少なければ半導体装置として問題はない。Even if a gap is formed at the interface between the sealing resin and the semiconductor pellet due to the difference in coefficient of thermal expansion between these materials, there is no problem with the semiconductor device as long as the amount of moisture that has entered is small.
浸入する水分の量を減らすために封止用樹脂や樹脂枠の
耐湿性が重要になる。Moisture resistance of the sealing resin and resin frame is important to reduce the amount of moisture that enters.
樹脂枠の耐湿性を向上させるには、耐湿性のよい材料を
用いることが考えられる。しかし、高加工性の打ち抜き
加工用樹脂積層板は、基材が紙である為に耐湿性が悪く
、耐湿性を向上させるため基材をガラス布に変えると打
ち抜き加工性が悪くなり良好な形状の樹脂枠を得ること
が難しくなる。In order to improve the moisture resistance of the resin frame, it is possible to use a material with good moisture resistance. However, resin laminates for punching with high workability have poor moisture resistance because the base material is paper, and when the base material is changed to glass cloth to improve moisture resistance, the punching workability deteriorates and the shape is not good. It becomes difficult to obtain a resin frame.
また、インジェクシｌン成形、トランスファー成形等で
樹脂枠を作る場合も同様で、耐湿性の良い成形樹脂材料
は、比較的粘度が高いため高精度の加工が難しく、樹脂
枠の製造歩留まりが悪くなり大変高価なものになってし
まう。本発明は、上述の欠点を除去し、より耐湿性の良
い半導体装置を提供するものである。The same is true when making resin frames using injection molding, transfer molding, etc. Molding resin materials with good moisture resistance have a relatively high viscosity, making it difficult to process with high precision, resulting in poor manufacturing yields for resin frames. It ends up being very expensive. The present invention eliminates the above-mentioned drawbacks and provides a semiconductor device with better moisture resistance.
〔問題点を解決するための手段〕
本発明の構成は、電気絶縁基板に半導体ペレットを取付
け、熱硬化性樹脂をボッティングする構造の半導体装置
において、熱硬化性樹脂の流れとめに非透水性の材料か
らなる枠を用いることにある。[Means for Solving the Problems] The configuration of the present invention is that in a semiconductor device having a structure in which a semiconductor pellet is attached to an electrically insulating substrate and a thermosetting resin is potted, a non-water permeable material is used to stop the flow of the thermosetting resin. The purpose is to use a frame made of the same material.
この非透水性の枠はかならずしも電気的に絶縁体である
必要はなく、電気的に導体であってもよい。This water-impermeable frame does not necessarily have to be an electrical insulator, but may be an electrical conductor.
以下に本発明の一実施例について詳細に説明する。図は
、本発明に係る一実施例を示す縦断面図である。An embodiment of the present invention will be described in detail below. The figure is a longitudinal cross-sectional view showing one embodiment of the present invention.
電気絶縁基板１には、ガラス繊維を含有したエポキシ樹
脂基板をもちいる。エポキシ樹脂以外の樹脂、例えばフ
ェノール樹脂、ポリイミド樹脂等であってもよいのは勿
論、ガラス繊維は電気絶縁性の繊維状のものであればよ
い。この電気絶縁基板１のキャビティに設けた金属層３
の上にマウント用熱硬化性樹脂４を塗布し半導体ペレッ
ト５を搭載し加熱する。マウント用熱硬化性樹脂４０代
わりに金属ロウ材を用いてマウントしてもよい。As the electrically insulating substrate 1, an epoxy resin substrate containing glass fiber is used. Of course, resins other than epoxy resins such as phenol resins and polyimide resins may be used, and the glass fibers may be in the form of electrically insulating fibers. Metal layer 3 provided in the cavity of this electrically insulating substrate 1
A thermosetting resin 4 for mounting is applied on top of the semiconductor pellet 5, and a semiconductor pellet 5 is mounted and heated. Instead of the thermosetting resin 40 for mounting, a metal brazing material may be used for mounting.
次に半導体ペレット５のパッドと電気絶縁基板１のＡｕ
メッキされた配線パターン６とをワイヤーボンディング
する。ボンディングワイヤー８としては、人ｕ、ＡＩの
いずれでもよく、通常のボンディング法が利用できる。Next, the pad of the semiconductor pellet 5 and the Au of the electrically insulating substrate 1
Wire bonding is performed with the plated wiring pattern 6. The bonding wire 8 may be either human u or AI, and a normal bonding method can be used.
次に、封止用樹脂流れどめの非透水性枠１０（以下、枠
と略記する。）を枠付は用樹脂１１を用いて接着し、そ
の内側にできたキャビティに封止用樹脂９を充填せしめ
る。枠１０はアルミナセラミ、クス製を用いた。また枠
１０は、非透水性の材料で、かつ枠付は用樹脂１１０間
に熱膨張係数の相違から隙間ができることのない材料で
あれば、例えば金属の表面を樹脂コーティングしたもの
や、ホーローびきしたものでもよい。さらに、樹脂枠の
表面を金属化処理したものや、金属製のものでもよい。Next, a water-impermeable frame 10 (hereinafter abbreviated as frame) for preventing the sealing resin from flowing is glued using the frame resin 11, and the sealing resin 9 is placed in the cavity created inside the frame. Let it fill up. The frame 10 was made of alumina ceramic or oak. The frame 10 can be made of a non-water-permeable material, and the frame can be made of a material that does not create gaps between the resins 110 due to differences in thermal expansion coefficients, such as metal surfaces coated with resin or enamel. It may be something you have done. Furthermore, the resin frame may have a metallized surface or may be made of metal.
これは、枠付は用樹脂１１によって絶縁ができるからで
ある。この場合、水と反応して水和物を作るものが望ま
しい。This is because insulation can be achieved by the frame resin 11. In this case, it is desirable to use a substance that reacts with water to form a hydrate.
この枠１０は充填した封止用樹脂９が流れ出るのを防止
すると同時に樹脂封止の封止距離を確保し、水分の浸入
を防ぐ機能を有する。したがって、枠１０と電気絶縁基
板１との接着は、十分枠付は用樹脂１１を充填して行な
う必要がある。枠を接着する方法には電気絶縁基板１側
へ枠付は用樹脂１１をソルダーレジスト７を介して所望
の場所に塗布しておく方法があるが、枠付は用樹脂の流
れすぎに注意する必要があるなど使用しにくい。従って
枠１０にあらかじめ枠付は用樹脂を付着させておく方法
が簡便である。付着させる樹脂は、枠付は用樹脂そのま
までも、半硬化させたものでもよい。This frame 10 has the function of preventing the filled sealing resin 9 from flowing out, ensuring a sealing distance for resin sealing, and preventing moisture from entering. Therefore, it is necessary to bond the frame 10 and the electrically insulating substrate 1 by filling the resin 11 sufficiently with the frame. There is a method of adhering the frame by applying the frame resin 11 to the desired location on the electrically insulating board 1 side through the solder resist 7, but when attaching the frame, be careful not to let the resin flow too much. Difficult to use as required. Therefore, it is convenient to apply a frame-forming resin to the frame 10 in advance. The resin to be attached may be the resin used for the frame as it is, or it may be semi-cured.
このようにした枠は、取り扱いが容易で工数の削減に効
果がある。封止用樹脂９を加熱硬化させた後、その上に
エポキシ系熱硬化樹脂であるキャップ付は用樹脂１２を
ボッティングし、金属製のキャップ１３を被せ、加熱硬
化させである。キャップ１３は、枠１０同様、非透水性
の材料で、かつキャップ付は用樹脂１２との間に熱膨張
係数の相違から隙間ができることのない材料であれば、
例えば樹脂キャップの表面を金属化処理したものや、６
一
アルミナセラミ、クス製のものでもよい。金属製のキャ
ップを用いる場合は、その表面を防錆処理を施しておく
ことが望ましい。Such a frame is easy to handle and is effective in reducing man-hours. After the sealing resin 9 is heated and cured, a capping resin 12 made of an epoxy thermosetting resin is potted thereon, a metal cap 13 is placed thereon, and the sealing resin 9 is heated and cured. Like the frame 10, the cap 13 is made of a non-water-permeable material, and if it is made of a material that does not create a gap between the cap and the resin 12 due to the difference in coefficient of thermal expansion,
For example, resin caps with metallized surfaces, 6
It may also be made of alumina ceramic or camphorax. When using a metal cap, it is desirable to apply anti-rust treatment to its surface.
以上、電気絶縁基板として樹脂基板を用いた場合につい
て説明したが樹脂基板に限らずアルミナ等のセラミック
ス基板であってもよいのは勿論である。The case where a resin substrate is used as the electrically insulating substrate has been described above, but it goes without saying that the invention is not limited to the resin substrate, and may be a ceramic substrate such as alumina.
以上説明したように、本発明は封止用樹脂流れどめ枠と
して金属、セラミ、クス等の非透水性材料を用いている
ため、水分が電気絶縁基板のキャビティ部へ侵入するの
を阻止でき、半導体装置の耐湿性を向上させることがで
きる。As explained above, since the present invention uses a water-impermeable material such as metal, ceramic, or wood as the sealing resin flow prevention frame, it is possible to prevent moisture from entering the cavity of the electrically insulating substrate. , the moisture resistance of the semiconductor device can be improved.
図は、本発明の一実施例を示す縦断面図である。
１・・・・・・電気絶縁基板、３・・・・・・金属層、
４・・・・・・マウント用樹脂、５・・・・・・半導体
ペレット、６・・・・・・配線パターン、７・・・・・
・ソルダーレジスト、８・・・・・・ボンディングワイ
ヤー、９・・・・・・封止用樹脂、１０・・・キャップ
付は用樹脂、１３・・・・・・キャップ。The figure is a longitudinal sectional view showing one embodiment of the present invention. 1... electrical insulating substrate, 3... metal layer,
4...Mounting resin, 5...Semiconductor pellet, 6...Wiring pattern, 7...
・Solder resist, 8... Bonding wire, 9... Sealing resin, 10... Resin for those with cap, 13... Cap.
Claims (1)
熱硬化性樹脂で被覆する構造の半導体装置において、熱
硬化性樹脂で被覆する部分の周囲に非透水性材料からな
る枠を設けたことを特徴とする樹脂封止型半導体装置。A semiconductor device having a structure in which a semiconductor pellet is attached to an electrically insulating substrate and the pellet is coated with a thermosetting resin, characterized in that a frame made of a non-water permeable material is provided around the part to be covered with the thermosetting resin. resin-sealed semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23268385A JPS6292345A (en) | 1985-10-17 | 1985-10-17 | Resin seal type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23268385A JPS6292345A (en) | 1985-10-17 | 1985-10-17 | Resin seal type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6292345A true JPS6292345A (en) | 1987-04-27 |
Family
ID=16943154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23268385A Pending JPS6292345A (en) | 1985-10-17 | 1985-10-17 | Resin seal type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6292345A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679976A (en) * | 1993-06-14 | 1997-10-21 | Polyplastics Co., Ltd. | Molded electric parts and method of manufacturing the same |
| US6246124B1 (en) * | 1998-09-16 | 2001-06-12 | International Business Machines Corporation | Encapsulated chip module and method of making same |
-
1985
- 1985-10-17 JP JP23268385A patent/JPS6292345A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679976A (en) * | 1993-06-14 | 1997-10-21 | Polyplastics Co., Ltd. | Molded electric parts and method of manufacturing the same |
| US6246124B1 (en) * | 1998-09-16 | 2001-06-12 | International Business Machines Corporation | Encapsulated chip module and method of making same |
| US6558981B2 (en) | 1998-09-16 | 2003-05-06 | International Business Machines Corporation | Method for making an encapsulated semiconductor chip module |
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