JPS6292219A - Magneto-resistance effect type thin film magnetic head - Google Patents
Magneto-resistance effect type thin film magnetic headInfo
- Publication number
- JPS6292219A JPS6292219A JP23238985A JP23238985A JPS6292219A JP S6292219 A JPS6292219 A JP S6292219A JP 23238985 A JP23238985 A JP 23238985A JP 23238985 A JP23238985 A JP 23238985A JP S6292219 A JPS6292219 A JP S6292219A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- gap
- yoke
- plane
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 161
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 230000000694 effects Effects 0.000 title description 7
- 239000010408 film Substances 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 230000004907 flux Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 31
- 238000009413 insulation Methods 0.000 abstract 4
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000615 nonconductor Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 241000219198 Brassica Species 0.000 description 1
- 235000003351 Brassica cretica Nutrition 0.000 description 1
- 235000003343 Brassica rupestris Nutrition 0.000 description 1
- 101100202589 Drosophila melanogaster scrib gene Proteins 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QKSKPIVNLNLAAV-UHFFFAOYSA-N bis(2-chloroethyl) sulfide Chemical compound ClCCSCCCl QKSKPIVNLNLAAV-UHFFFAOYSA-N 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 235000010460 mustard Nutrition 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
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- 238000007781 pre-processing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は強磁性薄膜からなる磁気抵抗素子を用いた磁気
ヘッドに係り、特に磁気ヨークによって信号磁束を磁気
抵抗効果素子に導く磁気ヨーク型の磁気抵抗効果素子f
lu [6気ヘツドに関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a magnetic head using a magnetoresistive element made of a ferromagnetic thin film, and in particular to a magnetic yoke-type head that uses a magnetic yoke to guide signal magnetic flux to a magnetoresistive element. magnetoresistive element f
lu [Relating to 6 air heads.
(従来の技術)
従来、強vArt薄膜からなる磁気抵抗効果素子(以下
、MR素子と称す)を+11用した限気低抗効果型薄膜
磁気ヘッド(以下、MR薄膜ヘッドと称1)は、コイル
を利用した電ra誘樽型薄膜磁気ヘッドと比較すると、
磁気テープ低速走行哨における再生感度は高く、しかも
、狭トラツク化が容易なことから高密度磁気記録におけ
るマルチ1〜ラツク磁気ヘツドとして利用されている。(Prior Art) Conventionally, a thin film magnetic head (hereinafter referred to as an MR thin film head) using a magnetoresistive effect element (hereinafter referred to as an MR element) made of a strong vArt thin film (hereinafter referred to as an MR thin film head) uses a coil Compared to an electric RA induction barrel type thin film magnetic head that uses
It has high playback sensitivity when running a magnetic tape at low speed, and it is easy to narrow the track, so it is used as a multi-track magnetic head for high-density magnetic recording.
この種のMRIif+膜ヘッドとしては、従来、MR素
子を磁気テープ層仙面に直接露出させた、いわゆるシー
ルドを及びノン・シールド型と称されるものと、磁気ヨ
ークを用いて磁束を内部のMR素子に導く、いわゆるヨ
ーク型がある。Conventionally, this type of MRIif+ film head uses a so-called shield type in which the MR element is directly exposed on the sacral surface of the magnetic tape layer, a so-called non-shield type, and a magnetic yoke that uses a magnetic yoke to transfer the magnetic flux to the internal MR head. There is a so-called yoke type that leads to the element.
第6図は従来のヨーク型によるMRid膜ヘッドの断面
図を示す。同図において、1は従来のM fl薄摸ヘッ
ドであり、2はMn−Znフェライトあるいは、Ni−
Znフェライト等からなる磁性基板で、磁気テープl!
!?初面である壁面2aとこの壁面2aに対して略垂直
な平面2bとを有している。FIG. 6 shows a cross-sectional view of a conventional yoke-type MRID film head. In the figure, 1 is a conventional M fl thin-print head, and 2 is a Mn-Zn ferrite or Ni-
A magnetic substrate made of Zn ferrite etc. makes magnetic tape l!
! ? It has a wall surface 2a that is the initial surface and a plane 2b that is substantially perpendicular to the wall surface 2a.
3は、例えば、5i02等の磁気的及び電気的絶縁膜か
らなる磁気ギャップで、既知の薄膜形成手段によって磁
性基板2の平面2bの上に設けられろ。3 is a magnetic gap made of a magnetically and electrically insulating film such as 5i02, which is provided on the plane 2b of the magnetic substrate 2 by known thin film forming means.
4は後記1ろMR素子にバイアス磁界を与える/jめの
導(本で、△l 、A l−Cu、MO’8の金属から
なる。4 is a conductor 4 which applies a bias magnetic field to the MR element in 1 below (in this book, it is made of metal Δl, Al-Cu, MO'8).
5は導体4を覆う如く設けたAl2O3あるいはSiO
2からなる電気絶縁膜である。5 is Al2O3 or SiO provided to cover the conductor 4.
This is an electrical insulating film consisting of 2.
6はN 1−Fe、 N i −Co等の薄膜カラ13
ルtt/IR素子で、電気絶縁膜5を介して導体4上
に設けられる。6 is a thin film color 13 such as N1-Fe, Ni-Co, etc.
The IR element is provided on the conductor 4 with an electrical insulating film 5 interposed therebetween.
7はIvlR素子6を絶縁するためのAl2O3あるい
はSiO2からなる電気絶縁膜である。Reference numeral 7 denotes an electrical insulating film made of Al2O3 or SiO2 for insulating the IvlR element 6.
8は電気絶縁膜3,5.7を介して導体4上に設けられ
る前方磁気ヨークであり、その一端部8aは磁気ギャッ
プ3aを介して磁性基板2と対峙しており、壁面2aと
共にテープ摺動面の一部8bを形成するとともに、紙面
に対してほぼ垂直方向に図示しない記録トラック幅相当
のコア幅を有している。8 is a front magnetic yoke provided on the conductor 4 through the electrical insulating films 3, 5.7, one end 8a of which faces the magnetic substrate 2 through the magnetic gap 3a, and is connected to the tape slider along with the wall surface 2a. It forms part 8b of the moving surface, and has a core width equivalent to the width of a recording track (not shown) in a direction substantially perpendicular to the plane of the paper.
9は前方磁気ヨーク8同様、電気絶縁13,5゜7を介
して導体4上に設置Jられる後方磁気ヨークであり、そ
の一端部9aは114方磁気ヨーク8の他端部8Cど共
にMR木子6に磁束を供給するためのレンサーギトツブ
SGを構成するとともに、他端部9bは磁性基板2の平
面2b上に接続されている。上記の構成から、前方磁気
ヨーク8.センリーギトツブSG、後方磁気ヨーク9.
磁性基板1及び磁気ギャップ3aからなる1つの磁気閉
回路88名えることが出来、導体4とMR素子6はこの
磁気閉回路Sの中に配設されている。Similar to the front magnetic yoke 8, 9 is a rear magnetic yoke that is installed on the conductor 4 via electrical insulation 13, 5°7, and its one end 9a is 114 and the other end 8C of the magnetic yoke 8 is MR wood. The other end 9b is connected to the flat surface 2b of the magnetic substrate 2. From the above configuration, the front magnetic yoke 8. Senry Gitotsubu SG, rear magnetic yoke 9.
One 88 magnetic closed circuit consisting of the magnetic substrate 1 and the magnetic gap 3a can be constructed, and the conductor 4 and the MR element 6 are arranged in this magnetic closed circuit S.
上jボの如く、前方磁気ヨーク8と後方磁気ヨークっは
段差を石する絶縁膜14.16の上に設けられるため、
これらの磁気ヨーク8.9には急勾配を右づ°る段差(
j+、d2等が生じている。As shown in the upper part, the front magnetic yoke 8 and the rear magnetic yoke are provided on the insulating film 14 and 16 that forms the step.
These magnetic yokes 8.9 have steps (
j+, d2, etc. are occurring.
上記の構成において、テープ層勅面2a、3b十を走行
する図示しない磁気テープからの信号磁束は壁面2aと
前方磁気ヨーク8のテープ摺動面の一部8bとをそれぞ
れ始端あるいは終端とする…気門回路S内を流れるが、
このとさ、センリーギャップSGを通る1妊束の一部が
漏洩磁束となってMR素子中を流れるから、磁束の変化
によるMR累了の抵抗値の変化は既知の電気回路を経て
出力電圧の変化、すなわち再生出力として外部に取り出
される。In the above configuration, the signal magnetic flux from the magnetic tape (not shown) running on the tape layer planes 2a and 3b starts or ends at the wall surface 2a and a portion 8b of the tape sliding surface of the front magnetic yoke 8, respectively. It flows through the spiracle circuit S,
At this time, a part of the single fertile flux passing through the Senry Gap SG becomes leakage magnetic flux and flows through the MR element, so the change in the resistance value of the MR completion due to the change in magnetic flux is caused by the output voltage through a known electric circuit. This change is taken out to the outside as a playback output.
この時、導体4には、MR素子6の抵抗変化率が最も大
きくなるようなバイアス電界を与える電流が与えられる
。At this time, a current is applied to the conductor 4 to provide a bias electric field that maximizes the rate of change in resistance of the MR element 6.
上述した従来のヨーク型MR薄膜ヘッドの問題点どして
は、
(1) 前方及び後方磁気ヨーク8.9のパターンを
フ第1−1ツヂングによって絶縁膜7上に形成する際、
絶縁膜7は導体1の上に設りられているため凹凸部を有
してJ3す、この上に設けられる前方及び後方磁気ヨー
ク8.9のパターンはこれにより段差d、、d2を生じ
る結果、上記パターンを粘度よく形成づることが出来な
い。The problems of the conventional yoke type MR thin film head mentioned above are as follows: (1) When forming the pattern of the front and rear magnetic yokes 8.9 on the insulating film 7 by F1-1 tweezing,
Since the insulating film 7 is provided on the conductor 1, it has an uneven portion J3, and the patterns of the front and rear magnetic yokes 8.9 provided thereon result in step differences d, d2. , the above pattern cannot be formed with good viscosity.
(2) 前号及び後方磁気ヨーク8.9の段差d1゜
d2等の部分は磁気特性、特に透la率μが劣化する傾
向があり、その結果、磁気ヘッドとしての再生効率の低
下をもたらす。(2) The magnetic properties, particularly the LA permeability μ, tend to deteriorate in the steps d1 and d2 of the rear magnetic yoke 8.9, resulting in a reduction in the reproduction efficiency of the magnetic head.
(3) 図示しない平坦な保護基板を前方及び後方磁
気ヨーク8.9の表面上に接着剤を介して設り、耐摩耗
性に富んだ磁気ヘッドを構成する場合、段差d1のため
に生じた接着層はテープの走行によって摩耗しやすく、
また摩耗によって生じた凹みにはゴミが付きやすくなる
結果、スペーシングロスを引き起し、再生出力を低下さ
せる等の問題点があった。(3) When a flat protective substrate (not shown) is provided on the surfaces of the front and rear magnetic yokes 8.9 with adhesive to form a highly wear-resistant magnetic head, the difference caused by the step d1. The adhesive layer is easily worn out by the running of the tape.
In addition, dirt tends to adhere to the dents caused by wear, resulting in spacing loss and a reduction in reproduction output.
(問題点を解決するための手段)
本発明は上記問題点を解決するためになされたものであ
り、第1の発明として磁気アープ層勅面となる壁面と、
この壁面に対してほぼ垂直に形成した平面とを有する磁
性基板を設け、上記壁面を含む平面上に平111部を有
する切欠部を形成し、バイアス磁界を与えるための導体
と、磁気抵抗効果素子に磁束を与えるためのセン督ナー
ギャップを有する磁気]−りとを、それぞれ電気絶縁膜
と磁気ギャップとなるべき電気絶縁膜を介して、上記磁
性基板の平面と同一高さとなる如く、かつ、上記センサ
ーギャップがこの平面上に露出する如く構成して設けて
なり、上記…気低抗効!11!素子を上記センサーギャ
ップの露出面の近傍に配設したことを特徴とする磁気戚
抗効果型薄膜磁気ヘッドを、第2の発明として遇気アー
プ!2!動面となる壁面と、この壁面に対して1よぼ垂
直に形成した平面とを有する磁性基板を設け、上記壁面
を含む平面上に平坦部を有する切欠部を形成し、バイア
ス磁界を与えるための導体と、磁気抵抗効果素子に磁束
を与えるための第1のセン1ナーギヤツプを有する第1
の磁気ヨークとを、それぞれ電気絶縁膜と磁気ギャップ
となるべき電気絶縁膜を介して、上記磁性基板の平面と
同一高さとなる如く、かつ、上記センサーギャップがこ
の平面上に露出する如く構成して設置ノ、更に第2のセ
ン1ナーギヤツプをイ1する第2の磁気ヨークを上記第
1のセンサーギャップを覆う如く設(′J、上記磁気抵
抗効果素子を上記第2のセンサーギャップの近傍に設け
たことを特徴とする磁気抵抗効果型薄膜磁気ヘッドを提
供しようとするものである。(Means for Solving the Problems) The present invention has been made to solve the above problems, and as a first invention, a wall surface serving as a magnetic Arp layer surface,
A magnetic substrate having a flat surface substantially perpendicular to the wall surface is provided, a cutout portion having a flat 111 portion is formed on the plane including the wall surface, a conductor for applying a bias magnetic field, and a magnetoresistive element. a magnetic field having a magnetic gap for giving magnetic flux to the magnetic substrate, respectively, through an electrically insulating film and an electrically insulating film that is to serve as a magnetic gap, so as to be at the same height as the plane of the magnetic substrate, and The above-mentioned sensor gap is configured and provided so as to be exposed on this plane, and the above-mentioned…low-temperature resistance effect! 11! A second invention of the present invention provides a thin film magnetic head of the magnetoresistive effect type, characterized in that an element is disposed near the exposed surface of the sensor gap. 2! A magnetic substrate having a wall surface serving as a moving surface and a plane approximately perpendicular to the wall surface is provided, and a notch portion having a flat portion is formed on the plane including the wall surface to apply a bias magnetic field. a first sensor having a conductor and a first sensor gap for applying magnetic flux to the magnetoresistive element;
and a magnetic yoke, respectively, through an electrical insulating film and an electrical insulating film to form a magnetic gap, so that they are at the same height as the plane of the magnetic substrate, and the sensor gap is exposed on this plane. Furthermore, a second magnetic yoke is installed to cover the first sensor gap, and the magnetoresistive element is placed near the second sensor gap. It is an object of the present invention to provide a magnetoresistive thin film magnetic head characterized by the following.
(実 施 例)
第1図は本発明になるヨーク型MRi’tD膜ヘッドの
第1実施例を示す一部欠戚斜視図であり、MR漣模膜ヘ
ッド?I数個設けた場合を示す。第2図は第1図のI−
I線に沿う要部断面図である。(Embodiment) FIG. 1 is a partially cutaway perspective view showing a first embodiment of the yoke type MR i'tD film head according to the present invention. The case where several Is are provided is shown. Figure 2 is I- of Figure 1.
FIG. 3 is a cross-sectional view of main parts taken along line I.
以下、第1図、第2図を用いて説明する。This will be explained below using FIGS. 1 and 2.
図中、10は本発明になるMRR膜ヘッドである。In the figure, numeral 10 is an MRR membrane head according to the present invention.
11は、例えばMn−Znフェライトからなる磁性基板
であり、磁気アープの1習動面12となる壁面11aと
この壁面11aに対してほぼ垂直方向に形成した平面1
1bとを有している。1
13は壁面11aを含む平面11bに設けられたり欠品
であり、壁面11aに対してほぼ垂直な長方形状の平I
n面13aを有している。Reference numeral 11 denotes a magnetic substrate made of, for example, Mn-Zn ferrite, which includes a wall surface 11a serving as one movement surface 12 of the magnetic arp and a flat surface 1 formed substantially perpendicular to this wall surface 11a.
1b. 1 13 is provided on the plane 11b including the wall surface 11a or is missing, and is a rectangular flat surface I that is almost perpendicular to the wall surface 11a.
It has an n-plane 13a.
14は、例えばS!02等からなる絶縁膜で、切欠部1
3の内壁上に設けられ、後記する導体17と切欠部13
の内壁との電気的絶縁の役割を果すものである。For example, 14 is S! The notch 1 is an insulating film made of 02 etc.
A conductor 17 and a notch 13, which will be described later, are provided on the inner wall of 3.
It plays the role of electrical insulation from the inner wall of the wall.
15は、例えば、ゼンダスト等の軟磁性膜からなる前方
磁気ヨークであり、上記壁面Haと共に形成されるテー
プ1習動面15aと磁性基板11の平面11bと同一高
さを有する重力平面部15bを有している。Reference numeral 15 denotes a front magnetic yoke made of a soft magnetic film such as Zendust, which has a gravity plane portion 15b having the same height as the tape 1 movement surface 15a formed together with the wall surface Ha and the plane 11b of the magnetic substrate 11. have.
16は後方磁気ヨークであり、前方磁気ヨーク15と同
じ材IIで、しかもこれと対向する如く切欠部13の内
部に設Ltられており、前方磁気ヨーク15と同様、平
面11bと同一高さの後方平面部IGaを右している。Reference numeral 16 denotes a rear magnetic yoke, which is made of the same material II as the front magnetic yoke 15, and is installed inside the notch 13 so as to face it, and, like the front magnetic yoke 15, is made of the same material II and is located at the same height as the plane 11b. The rear plane part IGa is on the right.
前方及び後方磁気ヨーク15.1Gは切欠部13の内部
に電気絶縁膜14a〜14c等を介して必要な磁気ヘッ
ドの数だけ設けられる。The front and rear magnetic yokes 15.1G are provided inside the notch 13 with the electrical insulating films 14a to 14c interposed therebetween in the number of required magnetic heads.
なお、電気絶縁膜14aは磁気ギャップの(本能を有づ
るものである。Note that the electrical insulating film 14a has a magnetic gap (instinct).
17はM R素子18にバイアス磁界を与えるための導
体で、例えばAIなどの金属からなり、前方及び後方磁
気ヨーク15. IGとは絶縁膜14介して電気的及び
磁気的に絶縁されて切欠部13の内部に設けられており
、その上面17aは磁気コーク15.1(iと同様、磁
性基板11の平面1 l bと同一高さを右している。17 is a conductor for applying a bias magnetic field to the MR element 18, and is made of metal such as AI, and is connected to the front and rear magnetic yokes 15. The IG is electrically and magnetically insulated via the insulating film 14 and is provided inside the notch 13, and its upper surface 17a is connected to the magnetic caulk 15.1 (similar to i, the flat surface 1 l b of the magnetic substrate 11 and the same height as the right.
19は1111方磁気]−り15の平面部15bと後方
磁気ヨーク16の平面部1’Gaとがギヤツブ艮W1を
隔ててス・1向づ−ることにより形成されるセンサーギ
ャップであり、ヒンリーギトツブ19の間には絶縁膜1
4c、14d及び導iA+7が介右している。19 is a sensor gap formed by the plane part 15b of the 1111 direction magnetic beam 15 and the plane part 1'Ga of the rear magnetic yoke 16 facing each other across the gear knob W1; Insulating film 1 between 19
4c, 14d and conductor iA+7 are intervening.
第2図に示1第1図のI−I線に沿う要部断面図にa3
いて、センサーギャップ19を示すが、同図から明らか
な如く、セン4ノーギヤツプ19は上方より下方が広く
なっている。20は平面11bと同一高さの平面を右づ
る磁気ヨーク15.16及び導体17上に設(Jられた
、例えばS i 02等からなる絶縁膜である。MRR
子18は、例えばNi−Feの薄膜からなり、幅Pを有
する磁束検出部18aと、この…束検出部18aに延在
して設けられる接続部18b。Figure 2 shows a3
As is clear from the figure, the sensor gap 19 is wider at the bottom than at the top. Reference numeral 20 denotes an insulating film made of, for example, S i 02, which is provided on the magnetic yoke 15, 16 and the conductor 17 with a plane at the same height as the plane 11b.
The element 18 is made of a Ni--Fe thin film, for example, and includes a magnetic flux detecting section 18a having a width P, and a connecting section 18b extending from the flux detecting section 18a.
18Cどからなり、これら接続部18b、18cにはそ
れぞれリード19a、 19bが設けられている。幅P
をイjする磁束検出部18aはフラットな平面を有する
絶縁膜20を介して幅W1を右づるセン4ノーギヤツプ
1つ上に設けられる。These connecting portions 18b and 18c are provided with leads 19a and 19b, respectively. Width P
The magnetic flux detecting section 18a that detects the magnetic flux is provided one gap above the sensor 4 with the width W1 on the right side, with an insulating film 20 having a flat plane interposed therebetween.
本実施例ではW + =−3−4μm、P=2〜3μm
程度の値を用いているが、これらの具体的数値は仕様に
」;って異なってくることは占うまでもない。In this example, W + =-3-4 μm, P = 2-3 μm
It goes without saying that these specific values will vary depending on the specifications.
上)ボの如く、本発明の構成において、従来の構成と最
も胃なる点は、重力磁気ヨーク15と侵乃磁気ヨーク1
6のフラン1へな平面15b、 16aによって作られ
るセンサーギャップ19上にMR木辛子18配設した点
である。言いかえるならば、磁気ヨーク15、16ど磁
性基板14笠により作られる磁気閉回路21の外部にI
VI R素子18を設けた点である。As shown above, the structure of the present invention is most different from the conventional structure in that the gravitational magnetic yoke 15 and the intrusive magnetic yoke 1
This is the point where the MR mustard 18 is disposed on the sensor gap 19 formed by the planes 15b and 16a of the flange 1 of 6. In other words, the I
This is because the VI R element 18 is provided.
上記の構成における作用は前記の従来例と同様のため説
明は省略する。The operation of the above configuration is similar to that of the prior art example, so a description thereof will be omitted.
第3図(a)〜(f)は本発明になる第1図に示す第1
の実施例の製)前工程説明図であり、第1図のI−I線
に沿う断面図に基づいて説明するものである。FIGS. 3(a) to 3(f) show the first structure shown in FIG. 1 which constitutes the present invention.
FIG. 2 is an explanatory view of the pre-processing process of the embodiment, and is explained based on a sectional view taken along the line II in FIG. 1.
以下、同図に従って、製造工程を説明する。The manufacturing process will be described below with reference to the same figure.
第3図(a)にJ3いて、31【ま上面にフラットな平
面31aを右づる磁性基板である。In FIG. 3(a), J3 is a magnetic substrate with a flat plane 31a on the upper surface.
32は平面31に形成した溝部であり、溝部32の底部
32aは平面31aとほぼ平行で滑らかな平面を有して
いる。上記溝部32を形成する方法としては、フ41へ
・リソグラフィに依って基板面のレジス1〜部を溝部3
2だ()除去したのち、リン酸等の液を用いてエツチン
グする方法がある。32 is a groove formed in the plane 31, and the bottom 32a of the groove 32 is substantially parallel to the plane 31a and has a smooth plane. As a method for forming the groove 32, the resist 1 to portions on the substrate surface are formed into the groove 32 by lithography.
There is a method of etching using a solution such as phosphoric acid after removing (2).
上記溝部32の底部32aには、後記する如く、磁気ギ
ャップを設けるため滑らかである必要があるが、エツヂ
ング方法どしてアルゴン等の不活性ガスを用いたイオン
・ミーリング法を用いるとエツ′f−ング面を滑らかに
することが出来る。As will be described later, the bottom 32a of the groove 32 needs to be smooth in order to provide a magnetic gap, but if an ion milling method using an inert gas such as argon is used as the etching method, the etching will be smooth. - It is possible to make the cutting surface smooth.
次に第3図(b)に示すように△l 203゜s r
O2:qの電気絶縁体33をスパック、蒸首等の手段に
よってL配溝部32を有する磁性基板31上に11[積
ざUる。Next, as shown in Figure 3(b), △l 203°s r
The electrical insulator 33 of O2:q is stacked 11 times on the magnetic substrate 31 having the L groove 32 by spucking, vaporization, or other means.
続いて、Δl、Mo等の非磁性金属部35を電気絶縁体
33上に堆積させた後、フォト・リソグラフィによって
形成したセンサーギャップパターン34をマスクとして
、J14a性金属体35をエツチングする。Subsequently, after depositing a non-magnetic metal portion 35 such as Δl or Mo on the electrical insulator 33, the J14a metal body 35 is etched using the sensor gap pattern 34 formed by photolithography as a mask.
このff″1、湿式下ツヂング法を用いると電気絶縁体
33をエツチングのス1へツバ−とすることが出来、点
線で示す非磁性金属部からなる導体35aを19る。By using this wet undercutting method, the electric insulator 33 can be etched to form a rib, and the conductor 35a made of a non-magnetic metal portion shown by the dotted line can be etched.
その1す、センサーギャップパターンをマスクとしてエ
ツチングによって得られた非磁性金属部35aをマスク
どして電気絶縁体33を除去するが、この電気絶縁体3
3が、例えば、SiO2によって設けられている時は、
CF4によるプラズマエツチングが利用出来、磁性基板
31をエツチングのス1〜ツバ−とすることが出来る。First, the electrical insulator 33 is removed by using the sensor gap pattern as a mask to remove the non-magnetic metal portion 35a obtained by etching.
When 3 is provided, for example, by SiO2,
Plasma etching using CF4 can be used, and the magnetic substrate 31 can be used as the etching step.
上記の如く、電気的絶縁体33を介して磁性基板31の
溝部32の中に設けられた非磁性金属部35aから)A
l〜lツレ1−からなるセンサーギャップパターン34
を剥離したのち、第3図(C)で示す如く、前記磁気ギ
ャップ14aとなるべき電気絶縁膜36を堆積したのら
、磁気ヨーク15.16となるべき、例えば、センダス
ト等の軟磁性膜37を電気絶縁膜3C上に堆積させる。As described above, from the non-magnetic metal part 35a provided in the groove part 32 of the magnetic substrate 31 via the electrical insulator 33)
Sensor gap pattern 34 consisting of l to l deviation 1-
After peeling off, as shown in FIG. 3(C), an electrical insulating film 36, which is to become the magnetic gap 14a, is deposited, and then a soft magnetic film 37, such as Sendust, which is to become the magnetic yoke 15, 16 is deposited. is deposited on the electrical insulating film 3C.
その後、堆積させた軟磁性膜37と電気絶縁膜36の大
部分(破線38まで)を研磨によって除去することによ
り、第3図(d)に示す研磨面39を有する基板40が
得られる。37a、 37bはそれぞれ前1ノ及び後方
磁気ヨークであり、35aはバイアス電流を与える導体
である。Thereafter, most of the deposited soft magnetic film 37 and electrical insulating film 36 (up to broken line 38) are removed by polishing, thereby obtaining a substrate 40 having a polished surface 39 as shown in FIG. 3(d). 37a and 37b are front and rear magnetic yokes, respectively, and 35a is a conductor for applying a bias current.
次に、第3図(e)に示J如く、基1fi40の研磨面
39には5i02等からなる電気絶縁膜41を堆積し、
更にその上に例えばNi−FeからなるMR素子42を
スパッタ手段等を用いて形成する。その後、破線43に
沿って基板40の端部44を切断すると磁気ギャップ3
Gaが現われ、第1図及び第2図に示すヨーク型のMR
薄膜ヘッド10と同等なMl膜ヘッド50が得られる。Next, as shown in FIG. 3(e), an electrical insulating film 41 made of 5i02 or the like is deposited on the polished surface 39 of the base 1fi40.
Furthermore, an MR element 42 made of, for example, Ni--Fe is formed thereon using sputtering means or the like. Thereafter, when the end portion 44 of the substrate 40 is cut along the broken line 43, the magnetic gap 3
Ga appears and the yoke type MR shown in Figs. 1 and 2
An Ml film head 50 equivalent to the thin film head 10 is obtained.
第3図(f)は第3図(e)におけるMR素子42を有
する平面上に5102等からなる保護WA45と接着層
46を介して保護基板47を設けたfVtRVtへッド
の例を示ずものであるが、接着層4Gには段差が生じな
いことが分る。FIG. 3(f) does not show an example of the fVtRVt head in which a protective substrate 47 is provided on the plane having the MR element 42 in FIG. 3(e) via a protective WA 45 made of 5102 etc. and an adhesive layer 46. However, it can be seen that no level difference occurs in the adhesive layer 4G.
上述の如く、本発明によれば磁気コークのパターンを形
成する際、段差が少ないためこのパターンをv1度よく
構成することが出来、また、軟磁性膜を1「積したのち
、研磨によって得られる磁気ヨークにも段差が生じない
ため、磁気特性の劣化は生じない。保護基板を磁気ヨー
ク面に接着して耐摩耗性に富んだ磁気ヘッドを構成した
場合にも段差がないため接着層を薄くすることが出来、
接着層の摩耗の影響を受けないMR薄膜ヘッドの製造を
可能とするものである。As described above, according to the present invention, when forming a pattern of magnetic coke, the pattern can be formed with good v1 degree because there are few steps. Since there are no steps on the magnetic yoke, there is no deterioration of magnetic properties. Even when a highly wear-resistant magnetic head is constructed by bonding a protective substrate to the magnetic yoke surface, there are no steps, so the adhesive layer can be made thinner. be able to,
This makes it possible to manufacture an MR thin film head that is not affected by wear of the adhesive layer.
第4図及び第5図はそれぞれ本発明になる第2及び第3
の実施例の断面図であり、センサーギャップを精度よ<
MR素子の近くに形成することを目的としている。FIG. 4 and FIG. 5 show the second and third embodiments of the present invention, respectively.
This is a cross-sectional view of an example of
The purpose is to form it near the MR element.
第4図において、GOは第2の実施例であるMRNPa
ヘッドである。61はセンダスト等の磁性薄膜からなる
第2の磁気ヨークであり、第1図に示すMR薄膜ヘッド
10において、電気絶縁1!20の一部を除去した前方
磁気ヨーク15および後方磁気ヨーク16を磁気的に結
合する如く両ヨーク15.16上に設けると共に、Si
O2等からなる電気絶縁膜62を介してMR素子18a
上に設ける。In FIG. 4, GO is the second embodiment MRNPa
It is the head. Reference numeral 61 denotes a second magnetic yoke made of a magnetic thin film such as Sendust, and in the MR thin film head 10 shown in FIG. The Si
MR element 18a via an electrical insulating film 62 made of O2 etc.
Place it on top.
63は第2の磁気ヨーク61に設けられた第2のセンサ
ーギャップであるが、上記のパターン方法を用いること
により、ギャップ長W2を有する第2のセンサーギャッ
プを精度よ<MR素子18a上に形成することが可能と
なる。63 is a second sensor gap provided on the second magnetic yoke 61, and by using the above patterning method, the second sensor gap having a gap length W2 can be formed on the MR element 18a with accuracy. It becomes possible to do so.
第5図において、70は第3の実施例であるMR薄膜ヘ
ッドである。71はセンダメ1−等の磁性薄膜からなる
第2の磁気ヨークであり、第3図(d)に示ず基板40
の研磨面39の導体35a上にギャップ長W3を有する
センサーギャップ72を形成する如く設けられる。In FIG. 5, 70 is an MR thin film head of the third embodiment. Reference numeral 71 denotes a second magnetic yoke made of a magnetic thin film such as Sendamer 1-, which is not shown in FIG.
A sensor gap 72 having a gap length W3 is formed on the conductor 35a of the polished surface 39 of the sensor.
73は第2の磁気ヨーク11上に設けられる5i02等
からなる電気絶縁膜であり、14は電気絶縁Il!73
を介してセンサーギャップ72上に設けられるMR素子
である。73 is an electrical insulating film made of 5i02 or the like provided on the second magnetic yoke 11, and 14 is an electrical insulating film Il! 73
This is an MR element provided on the sensor gap 72 via the sensor gap 72.
この構成にお、いては、センサーギャップ長W3を精度
よく形成出来ると共に第2の磁気ヨーク71は第4図の
第2の磁気ヨーク61に比較して表面の凹凸を少なく出
来るため、磁気ヨーク61を構成する軟磁性膜の磁気特
性が表面の凹凸に極めて敏感な場合には有利となる効果
を有している。In this configuration, the sensor gap length W3 can be formed with high precision, and the surface unevenness of the second magnetic yoke 71 can be reduced compared to the second magnetic yoke 61 shown in FIG. This has an advantageous effect when the magnetic properties of the soft magnetic film constituting the magnetic film are extremely sensitive to surface irregularities.
(発明の効果)
以上の知(、本発明になる磁気抵抗効果型薄膜磁気ヘッ
ドは、平面部を有する磁性基板の平面上に溝部を設け、
この溝部の内部に、センサーギャップを有し強磁性薄膜
からなる磁気ヨークと、センサーギャップにバイアス磁
束を与える導体とを埋設すると共に、これらの高さが磁
性基板の平面部と同一高さを有する如く研磨による同一
平面を構成し、この同一平面上に露出したセンサーギャ
ップの近傍にMR素子を設けたことにより、(1)
磁気ユークは段差による磁気特性の劣化を受けず、再生
効率の優れたMR薄膜ヘッドの製造を可能とする。(Effects of the Invention) As described above, the magnetoresistive thin film magnetic head according to the present invention has a groove section provided on a flat surface of a magnetic substrate having a flat section,
A magnetic yoke that has a sensor gap and is made of a ferromagnetic thin film and a conductor that provides a bias magnetic flux to the sensor gap are buried inside this groove, and the heights of these are the same as the flat part of the magnetic substrate. (1) By constructing the same plane by polishing, and providing the MR element near the sensor gap exposed on this same plane, (1)
Magnetic Yuke does not suffer from deterioration of magnetic properties due to differences in level, making it possible to manufacture an MR thin-film head with excellent reproduction efficiency.
■ 保護基板を磁気ヨーク面はMR素子を除いて構成す
る際、磁気ヨーク面はMR素子を除いて、同一平面とな
っているため、テープ旧動部の接着層を薄くすることが
出来るから、テープ走行による摩耗の影響を受けないM
R薄膜ヘッドのlJ造を可能とする。■ When configuring the protective substrate with the magnetic yoke surface excluding the MR element, since the magnetic yoke surface is on the same plane except for the MR element, the adhesive layer on the tape old moving part can be made thinner. M not affected by wear due to tape running
Enables LJ construction of R thin film head.
また、前記同一平面上に第2のセンサーギャップを有す
る第2の磁気ヨーク面金属部この第2のセンサーギャッ
プの近傍にMR素子を構成することにより、
■ 精度の高いセンサーギャップとMR素子との構成を
可能とし、製造上バラツキの少ないMR薄膜ヘッドの製
造を可能とする等の効果をイ1するものである。In addition, by configuring the MR element in the vicinity of the second magnetic yoke surface metal part having the second sensor gap on the same plane, (1) a highly accurate connection between the sensor gap and the MR element; The present invention has the following effects, such as enabling the configuration and manufacturing of MR thin film heads with less variation in manufacturing.
第1図は本発明になるヨーク型MR薄膜ヘッドの第1実
施例を示ず一部欠截斜祝図、第2図は第1図の14線に
沿う要部断面図、第3図(a)〜(e)は本発明になる
ヨーク型MRii’膜ヘッドの実施例の製造工程説明図
、第3図(「)は、第3図(e)において、MR素子4
2を有する平面上に保護膜等を介して保護基板を設けて
構成したMR11ヘッドの断面図、第4図及び第5図は
それぞれ本発明になる第2及び第3の実施例を示す断面
図、第6図は従来のヨーク型による磁気抵抗効果型薄膜
磁気ヘッドの断面図である。
11・・・磁性基板、11a・・・壁面、11b・・・
平面、12・・・磁気アープ摺動部、13・・−切欠部
、14、20・・・電気絶縁膜、15.378・・・前
方磁気ヨーク、IG、 3’7b・・・後方磁気ヨーク
、17・・・導体、18、42.74・・・磁気抵抗効
果素子(MR素子)、19・・・センサーギャップ、
61、71・・・第2の磁気〕−り、
G3.73・・・第2のセンサーギャップ。
才 イ 万2l
−t2厨
2′3 回FIG. 1 is a partially cutaway perspective view of the first embodiment of the yoke-type MR thin film head according to the present invention, FIG. 2 is a sectional view of the main part along line 14 in FIG. a) to (e) are explanatory views of the manufacturing process of the embodiment of the yoke type MRii' film head according to the present invention, and FIG.
4 and 5 are cross-sectional views showing the second and third embodiments of the present invention, respectively. , FIG. 6 is a sectional view of a conventional yoke type magnetoresistive thin film magnetic head. 11...Magnetic substrate, 11a...Wall surface, 11b...
Plane, 12...Magnetic arc sliding part, 13...-Notch, 14, 20...Electric insulating film, 15.378...Front magnetic yoke, IG, 3'7b...Backward magnetic yoke , 17... Conductor, 18, 42.74... Magnetoresistive element (MR element), 19... Sensor gap, 61, 71... Second magnetism]-ri, G3.73... -Second sensor gap. Sai I 10,000 2l - t2 2'3 times
Claims (2)
てほぼ垂直に形成した平面とを有する磁性基板を設け、
上記壁面を含む平面上に平坦部を有する切欠部を形成し
、バイアス磁界を与えるための導体と、磁気抵抗効果素
子に磁束を与えるためのセンサーギャップを有する磁気
ヨークとを、それぞれ電気絶縁膜と磁気ギャップとなる
べき電気絶縁膜を介して、上記磁性基板の平面と同一高
さとなる如く、かつ、上記センサーギャップがこの平面
上に露出する如く構成して設けてなり、上記磁気抵抗効
果素子を上記センサーギャップの露出面の近傍に配設し
たことを特徴とする磁気抵抗効果型薄膜磁気ヘッド。(1) Providing a magnetic substrate having a wall surface serving as a sliding surface for the magnetic tape and a plane formed almost perpendicular to this wall surface,
A notch having a flat part is formed on a plane including the wall surface, and a conductor for applying a bias magnetic field and a magnetic yoke having a sensor gap for applying magnetic flux to the magnetoresistive element are respectively connected to an electrical insulating film. The magnetoresistive element is arranged so that it is at the same height as the plane of the magnetic substrate, and the sensor gap is exposed on this plane, with an electrical insulating film serving as a magnetic gap interposed therebetween. A magnetoresistive thin film magnetic head, characterized in that it is disposed near the exposed surface of the sensor gap.
てほぼ垂直に形成した平面とを有する磁性基板を設け、
上記壁面を含む平面上に平坦部を有する切欠部を形成し
、バイアス磁界を与えるための導体と、磁気抵抗効果素
子に磁束を与えるための第1のセンサーギャップを有す
る第1の磁気ヨークとを、それぞれ電気絶縁膜と磁気ギ
ャップとなるべき電気絶縁膜を介して、上記磁性基板の
平面と同一高さとなる如く、かつ、上記センサーギャッ
プがこの平面上に露出する如く構成して設け、更に第2
のセンサーギャップを有する第2の磁気ヨークを上記第
1のセンサーギャップを覆う如く設け、上記磁気抵抗効
果素子を上記第2のセンサーギャップの近傍に設けたこ
とを特徴とする磁気抵抗効果型薄膜磁気ヘッド。(2) Providing a magnetic substrate having a wall surface serving as a sliding surface for the magnetic tape and a plane formed almost perpendicular to the wall surface,
A cutout portion having a flat portion is formed on a plane including the wall surface, and a conductor for applying a bias magnetic field and a first magnetic yoke having a first sensor gap for applying magnetic flux to the magnetoresistive element are provided. , are arranged so as to be at the same height as the plane of the magnetic substrate, and so that the sensor gap is exposed on this plane, via an electrical insulating film and an electrical insulating film to be a magnetic gap, respectively, 2
A magnetoresistive thin film magnet, characterized in that a second magnetic yoke having a sensor gap of is provided to cover the first sensor gap, and the magnetoresistive element is provided near the second sensor gap. head.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23238985A JPS6292219A (en) | 1985-10-18 | 1985-10-18 | Magneto-resistance effect type thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23238985A JPS6292219A (en) | 1985-10-18 | 1985-10-18 | Magneto-resistance effect type thin film magnetic head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6292219A true JPS6292219A (en) | 1987-04-27 |
JPH0346884B2 JPH0346884B2 (en) | 1991-07-17 |
Family
ID=16938469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23238985A Granted JPS6292219A (en) | 1985-10-18 | 1985-10-18 | Magneto-resistance effect type thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6292219A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0617410A2 (en) * | 1993-03-22 | 1994-09-28 | N.V. Philips' Gloeilampenfabrieken | Method of manufacturing a thin-film magnetic head, and magnetic head obtainable by means of said method |
EP0617409A2 (en) * | 1993-03-22 | 1994-09-28 | Koninklijke Philips Electronics N.V. | Method of manufacturing a thin-film magnetic head, and magnetic head obtainable by means of said method |
BE1006925A3 (en) * | 1993-03-22 | 1995-01-24 | Koninkl Philips Electronics Nv | Method for constructing a thin film magnetic head and magnetic headconstructed according to the method |
EP0658881A1 (en) * | 1993-12-17 | 1995-06-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing a thin-film magnetic head, and magnetic head manufactured by means of said method |
US5483735A (en) * | 1993-03-22 | 1996-01-16 | U.S. Philips Corporation | Method of manufacturing a thin-film magnetic head |
-
1985
- 1985-10-18 JP JP23238985A patent/JPS6292219A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0617410A2 (en) * | 1993-03-22 | 1994-09-28 | N.V. Philips' Gloeilampenfabrieken | Method of manufacturing a thin-film magnetic head, and magnetic head obtainable by means of said method |
EP0617409A2 (en) * | 1993-03-22 | 1994-09-28 | Koninklijke Philips Electronics N.V. | Method of manufacturing a thin-film magnetic head, and magnetic head obtainable by means of said method |
BE1006925A3 (en) * | 1993-03-22 | 1995-01-24 | Koninkl Philips Electronics Nv | Method for constructing a thin film magnetic head and magnetic headconstructed according to the method |
US5483735A (en) * | 1993-03-22 | 1996-01-16 | U.S. Philips Corporation | Method of manufacturing a thin-film magnetic head |
US5531016A (en) * | 1993-03-22 | 1996-07-02 | U.S. Philips Corporation | Method of manufacturing a thin-film magnetic head |
EP0617410A3 (en) * | 1993-03-22 | 1996-12-11 | Koninkl Philips Electronics Nv | Method of manufacturing a thin-film magnetic head, and magnetic head obtainable by means of said method. |
EP0617409A3 (en) * | 1993-03-22 | 1996-12-27 | Koninkl Philips Electronics Nv | Method of manufacturing a thin-film magnetic head, and magnetic head obtainable by means of said method. |
EP0658881A1 (en) * | 1993-12-17 | 1995-06-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing a thin-film magnetic head, and magnetic head manufactured by means of said method |
BE1007992A3 (en) * | 1993-12-17 | 1995-12-05 | Philips Electronics Nv | Method for manufacturing a dunnefilmmagneetkop solenoid and manufactured by the method. |
Also Published As
Publication number | Publication date |
---|---|
JPH0346884B2 (en) | 1991-07-17 |
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