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JPS6289321A - Semiconductor pellet - Google Patents

Semiconductor pellet

Info

Publication number
JPS6289321A
JPS6289321A JP60231620A JP23162085A JPS6289321A JP S6289321 A JPS6289321 A JP S6289321A JP 60231620 A JP60231620 A JP 60231620A JP 23162085 A JP23162085 A JP 23162085A JP S6289321 A JPS6289321 A JP S6289321A
Authority
JP
Japan
Prior art keywords
pellet
junction
groove
functional part
element functional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60231620A
Other languages
Japanese (ja)
Inventor
Hisashi Haneda
尚志 羽田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60231620A priority Critical patent/JPS6289321A/en
Publication of JPS6289321A publication Critical patent/JPS6289321A/en
Pending legal-status Critical Current

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  • Dicing (AREA)

Abstract

PURPOSE:To reduce the number of any defective products while preventing the crack 4 or the like due to mechanical stress such as dicing in case of cutting and separating pellets from a wafer from reaching the element functional part by means of providing the peripheral part of a pellet with grooves. CONSTITUTION:An element functional part 2 directly related to the operation of elements such as a junction, mesa groove for protecting P-N junction or improving the dielectric strength, as well as a depletion region expanding in operation and the like is situated in the central part of a semiconductor pellet (substrate) 1 while a groove 3 encircling the functional part 2 is provided in the space between the part 2 and the peripheral parts of pellet 1. AT this time, it is recommended to form the groove 3 around 1.5 times deeper compared with the depth of P-N junction of element functional part 2 by a process such as etching or the like under no effect of mechanical stress.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ペレットに関し、特に半導体ペレットの
外周部の構造に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor pellet, and particularly to the structure of the outer periphery of the semiconductor pellet.

〔従来の技術〕[Conventional technology]

従来、半導体ペレット外周部には、ベベル、メサ等の素
子機能向上のだめの溝を除き、特に機能部保獲用の溝は
設けられることはなかった。
Conventionally, except for grooves such as bevels and mesas for improving device functionality, grooves for retaining functional parts have not been provided on the outer periphery of semiconductor pellets.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した様に従来の半導体ペレットにおいては、ペレッ
ト外周部に特に嘴を設けることがなかったので、ウェハ
ーからペレットへ切断分離する際に、一般的にはダイシ
ング等の機械的切断方法を用いると第2図に示す様にク
ラック4が生じ、時として機能部2捷で達し、不良品と
なる欠点がある。
As mentioned above, conventional semiconductor pellets do not have a beak on the outer periphery of the pellet, so when cutting and separating the wafer into pellets, it is generally difficult to use a mechanical cutting method such as dicing. As shown in Figure 2, cracks 4 occur and sometimes reach the functional part 2, resulting in a defective product.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

本発明の半導体ペレットは、主面上に設けられたPN接
合及び動作時に広がる空乏層を含む素子機能部とペレッ
ト周縁との間の任意の位置にペレットの全周にわたり素
子機能部を囲む溝部をイコしている。
The semiconductor pellet of the present invention has a groove portion that surrounds the device function portion over the entire circumference of the pellet at an arbitrary position between the device function portion including the PN junction provided on the main surface and the depletion layer that expands during operation and the periphery of the pellet. It's cool.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図(a)は本発明の一実施例の縦断面図、第1図(
b)は第1図(a)の平面図である。半導体ペレット1
には、中央部にPN接合や、PN接合保護用又は耐圧向
上用のメサ溝部及び動作時に拡がる空乏層領域等、素子
の動作に直接関係する素子機能部2があり、素子機能部
2を囲んでペレット周縁との間に溝部3が設けられてい
る。この溝部3は工。
FIG. 1(a) is a longitudinal cross-sectional view of one embodiment of the present invention, FIG.
b) is a plan view of FIG. 1(a). Semiconductor pellet 1
There is an element functional part 2 in the center that is directly related to the operation of the element, such as a PN junction, a mesa groove for protecting the PN junction or improving breakdown voltage, and a depletion layer region that expands during operation. A groove 3 is provided between the pellet and the peripheral edge of the pellet. This groove part 3 is machined.

チング等の機械的ストレスの及ばない方法により、素子
機能部のPN接合深さの約15倍以上に形成するのが望
ましい。この溝部3により、半導体ウェハーからペレッ
トへ切断分離する際のダイシング等による機械的ストレ
スによって生じたクラックは、ペレット周縁部から素子
機能部へ拡がることなく停止する。
It is preferable to form the PN junction at least 15 times the depth of the PN junction in the element functional section using a method that does not apply mechanical stress such as chipping. Due to the groove portion 3, cracks caused by mechanical stress caused by dicing or the like when cutting and separating the semiconductor wafer into pellets are stopped without spreading from the peripheral edge of the pellet to the element functional portion.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、ペレット外周部に溝部を
設けることによりウェハーからペレットに切断分離する
際のダイシング等の機械的ストレスで生じたクラック等
が素子機能部まで達するのを防止することができ、不良
品の発生を少くする効果がある。
As explained above, the present invention prevents cracks caused by mechanical stress such as dicing when cutting and separating pellets from a wafer from reaching the device functional parts by providing grooves on the outer periphery of the pellets. This has the effect of reducing the occurrence of defective products.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明の一実施例の半導体ペレットの縦
断面図、第1図(b)は第1図(a)の平面図であり、
第2図(a)は従来の半導体ペレットの縦断面図、第2
図(b)は第2図(a)の平面図である。 1・・・・・・半導体基板、2・・・・・・機能部、3
・・・・・・渦部、4・・・・・・クラック。 代理人 弁理士  内 D〕R・ −パ・冨、−7l ゛ − 早/口霞 第1 図(b) 平2 目(α〕 牟2図(b)
FIG. 1(a) is a longitudinal cross-sectional view of a semiconductor pellet according to an embodiment of the present invention, and FIG. 1(b) is a plan view of FIG. 1(a).
Fig. 2(a) is a vertical cross-sectional view of a conventional semiconductor pellet;
FIG. 2(b) is a plan view of FIG. 2(a). 1... Semiconductor substrate, 2... Functional section, 3
... Vortex, 4... Crack. Agent Patent Attorney Uchi D゛ - Haya / Kuchi Kasumi Figure 1 (b) Figure 2 (α) Figure 2 (b)

Claims (1)

【特許請求の範囲】[Claims] ウェハーから切断分離された半導体ペレットにおいて、
前記ペレットの主面に設けられたPN接合及び動作時に
広がる空乏層を含む素子機能部とペレット周縁との間の
任意の位置に、前記素子機能部を囲む溝部を有すること
を特徴とする半導体ペレット。
In the semiconductor pellets cut and separated from the wafer,
A semiconductor pellet having a groove portion surrounding the element functional portion at an arbitrary position between the pellet peripheral edge and the element functional portion including a PN junction provided on the main surface of the pellet and a depletion layer that expands during operation. .
JP60231620A 1985-10-16 1985-10-16 Semiconductor pellet Pending JPS6289321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60231620A JPS6289321A (en) 1985-10-16 1985-10-16 Semiconductor pellet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60231620A JPS6289321A (en) 1985-10-16 1985-10-16 Semiconductor pellet

Publications (1)

Publication Number Publication Date
JPS6289321A true JPS6289321A (en) 1987-04-23

Family

ID=16926361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60231620A Pending JPS6289321A (en) 1985-10-16 1985-10-16 Semiconductor pellet

Country Status (1)

Country Link
JP (1) JPS6289321A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330357A (en) * 1989-06-27 1991-02-08 Mitsubishi Electric Corp Semiconductor chip and manufacture thereof
US5420455A (en) * 1994-03-31 1995-05-30 International Business Machines Corp. Array fuse damage protection devices and fabrication method
WO2004033211A1 (en) * 2002-10-09 2004-04-22 Sony Corporation Liquid-discharging head, liquid-discharging device, and method of producing the liquid-discharging head

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330357A (en) * 1989-06-27 1991-02-08 Mitsubishi Electric Corp Semiconductor chip and manufacture thereof
US5420455A (en) * 1994-03-31 1995-05-30 International Business Machines Corp. Array fuse damage protection devices and fabrication method
WO2004033211A1 (en) * 2002-10-09 2004-04-22 Sony Corporation Liquid-discharging head, liquid-discharging device, and method of producing the liquid-discharging head
US7125104B2 (en) 2002-10-09 2006-10-24 Sony Corporation Liquid-discharging head, liquid-discharging device, and method of producing the liquid-discharging head

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