JPS6285481A - Resin-sealed light emitting diode and manufacture thereof - Google Patents
Resin-sealed light emitting diode and manufacture thereofInfo
- Publication number
- JPS6285481A JPS6285481A JP60225392A JP22539285A JPS6285481A JP S6285481 A JPS6285481 A JP S6285481A JP 60225392 A JP60225392 A JP 60225392A JP 22539285 A JP22539285 A JP 22539285A JP S6285481 A JPS6285481 A JP S6285481A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- resin
- film
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の属する分野の説明）
この発明は、樹脂封止発光ダイオードの高信頼度化を実
現するためのパッジベージｌン構造に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Description of the Field to which the Invention Pertains) The present invention relates to a pad-base structure for realizing highly reliable resin-sealed light emitting diodes.
（従来の技術）
ングワイヤを外力から保膜し、かつ、固着せしめるため
樹脂で封止されてい之 又、光は上方、ｕｌｊち樹脂を
透過１〜て外部に取り出される？ｌＩＩ造となっている
。従来は作業性及び光学的特性の観点から、エポキシ系
の樹脂や、シリコン系樹脂で封止する構造がとられてい
７’ｊ、Ｌかし７ながら、これらの樹脂は耐湿性が十分
でなく、このため特にＡＬＯａＡｓ発光ダイオードでは
、侵入し九水分との反応により、チップ発光表面に光吸
収性腐食Ｉｌｌが生成されるので、劣化が著Ｌ ＜ 寿
命が短かいという欠点があった。(Prior art) The wire is sealed with a resin to protect it from external forces and to fix it.Also, the light is transmitted upward through the resin and taken out to the outside. It is of lII construction. Conventionally, from the viewpoint of workability and optical properties, sealing structures have been adopted with epoxy resins or silicone resins. For this reason, ALOaAs light emitting diodes in particular have the disadvantage that light-absorbing corrosion Ill is generated on the chip light emitting surface due to the reaction with penetrating nine-moisture content, resulting in significant deterioration and short life.
（発明の目的）
本発明は、樹脂封止発光ダイオード装置のチップ表面腐
食ｉ＠の生成を抑制し、長寿命化ケ図るため１チップ表
面等に空化シリコン（８１，Ｎ、 ）からなる保護膜を
施こ【７たものである。８１．Ｎ４膜形成には電子サイ
クロトロンプラズマ化学気相蒸着（ＥＯＲ−Ｐ−ＯＶＩ
））法を用いることによって、ボンディング後の構造の
発光ダイオード全表面への均一な膜の被覆を低熱ス）
Ｌ／スで素子に劣化を与えることなく達成［７ている。(Objective of the Invention) The present invention provides protection made of empty silicon (81,N, It has been coated with a membrane. 81. Electron cyclotron plasma chemical vapor deposition (EOR-P-OVI) was used to form the N4 film.
)) By using the method, the entire surface of the light emitting diode structure after bonding can be coated with a uniform film at a low temperature.
Achieved with L/S without deteriorating the device [7].
（発明の構成と作用）
第１図は、本発明の８１．Ｎ、保挿膜を施こした断面図
の一例である。図において、ｌは発光ダイオードチップ
、−は／をマウントしたステム電極、３は電極パッド、
グはボンディングワイヤ、ｊはＳｒ、Ｎ、膜、６け封止
用樹脂である。(Structure and operation of the invention) FIG. 1 shows 81. of the present invention. N is an example of a cross-sectional view with a protective membrane applied. In the figure, l is a light emitting diode chip, - is a stem electrode mounted with /, 3 is an electrode pad,
g is a bonding wire, j is Sr, N, film, and six sealing resins.
ｊを除く／〜乙の構成は、第２図に示す従来の発光ダイ
オード装置と同一である。樹脂封止発光ダイオードのチ
ップマウントには耐熱温度の低い導電性ベースｌｆ−使
用している。このため、！の８１、Ｎ、膜は低温での膜
形成が可能なＥＯＩＩ・Ｐ−ＣＩＶＤ方法な用いて形成
し、その後耐熱温度内でアニールを実施１〜である。膜
は、ｌ−弘の構成物表面を１′べて覆っているため、外
気からＡ’ｌｒ透過してくる水分に対して被覆物を保役
し腐食を抑制する作用がある。Except for j, the configuration of parts B to B is the same as the conventional light emitting diode device shown in FIG. A conductive base lf-, which has a low heat resistance, is used for the chip mount of the resin-sealed light emitting diode. For this reason,! The 81,N film was formed using the EOII/P-CIVD method that allows film formation at low temperatures, and then annealed within a heat-resistant temperature range. Since the film covers the entire surface of the A'lr component, it has the effect of preserving the coating against moisture that permeates through the A'lr from the outside air and suppressing corrosion.
又、ＦＩＯＲＰ−ＯＶＤ方法を用いているので、第１図
に示すようにボンディングワイヤーの直下部においても
、８１．Ｎ、がまわり込んで形成されるので、ボンディ
ングワイヤがいわゆる影の部分を作ることがない。Furthermore, since the FIORP-OVD method is used, even in the area directly below the bonding wire, as shown in FIG. Since the bonding wire is formed by wrapping around the bonding wire, the bonding wire does not create a so-called shadow part.
（実施例）
第３図は、８１．Ｎ４膜有りと無ｌ−の樹脂封止発光ダ
イオード装置の耐湿性試験における故障発生分布を示し
たものである。この図からｒｒ”ｃ、ｔｚｓＰＩ（環境
下の発光寿命は、８１．Ｎ、膜の作用により、−倍以上
改善されていることが明らかである。(Example) FIG. 3 shows 81. This figure shows the failure occurrence distribution in the moisture resistance test of resin-sealed light emitting diode devices with and without an N4 film. From this figure, it is clear that the luminescence lifetime under rr''c, tzsPI (81.N) film has been improved by more than a factor of -2.
第参図は、８１．Ｎ、膜有りと無しの樹脂封止発光ダイ
オード装置の光出力分布を示したものである。The reference figure is 81. N, shows the light output distribution of resin-sealed light emitting diode devices with and without a film.
８１、Ｎ、膜による発光効率の低下は僅少である。この
発光効率の減少普は、前述の寿命改善効果による発光効
率の低下抑制普に比べ、実用上無視できる程度の値であ
る。The reduction in luminous efficiency due to the 81, N film is slight. This reduction in luminous efficiency is practically negligible compared to the reduction in luminous efficiency due to the above-mentioned life-improving effect.
（効 果）
ボンディング後のチィップを含む構成物全表面に、８１
．Ｎ、膜を被覆することによって、樹脂封止発光ダイオ
ードの発光効率を低下させることなく、耐湿向合を大き
く改善する効果が得られる。特にＡｊＧａＡｓ系発光ダ
イオードに有効である。(Effect) After bonding, the entire surface of the structure including the chip is covered with 81
．． By coating the film with N, the effect of greatly improving moisture resistance can be obtained without reducing the luminous efficiency of the resin-sealed light emitting diode. This is particularly effective for AjGaAs light emitting diodes.
又、窒化シリコン（ＳＩＩＮ４）のみｔ【らず二酸化シ
リコン（８１０，）膜でも同様の効果が得られた。Further, similar effects were obtained not only with silicon nitride (SIIN4) but also with silicon dioxide (810,) film.
被覆方法として１つ０几・Ｉ）−０Ｖｒｌ用いているの
で、半導体素子の表面だけでなくＪｊ向に無関係な立体
面全面に低温で８Ｉｓ Ｎ４ Ｊ［ｋ被覆でき、更に高
温処理による影響を受けることなく耐湿性を改善できる
利点がある。Since one coating method is 0 几・I)-0Vrl, 8Is N4 J[k can be coated not only on the surface of the semiconductor element but also on the entire three-dimensional surface unrelated to the Jj direction at a low temperature, and is not affected by high temperature treatment. This has the advantage that moisture resistance can be improved without any damage.
＠／図は本発明の樹脂封止発光ダイオード装置の断面図
、第２図は従来の樹脂封止発光ダイオード装置の断面図
、＠３図は寿命に与える８１．Ｎ、膜の効果を示した耐
湿性試験の故障発生分布比較の一例である。第≠図は発
光効率に与える８１．Ｎ、膜の効果を示した発光出力の
正規確率分布である。
／・・・発光ダイオードチップ、λ・・・ステム電極、
３・・・ｔｌｔ＆パッド、ｌ・・・ボンディングワイヤ
、！・・・窒化シリコン（８１，Ｎ、）膜、６・・・封
止用樹脂。Figure @/ is a cross-sectional view of the resin-sealed light emitting diode device of the present invention, Figure 2 is a cross-sectional view of a conventional resin-sealed light-emitting diode device, and Figure @3 is the 81. This is an example of a comparison of failure occurrence distribution in a moisture resistance test showing the effectiveness of N and membranes. Figure ≠ shows the effect of 81 on luminous efficiency. N is a normal probability distribution of light emission output showing the effect of the film. /...Light emitting diode chip, λ...Stem electrode,
3...tlt&pad, l...bonding wire,! . . . Silicon nitride (81,N,) film, 6 . . . Sealing resin.
Claims (2)
け、当該発光ダイオードチップに、上記ステム電極とは
異なる位置に電極パッドを介してボンディングワイヤを
設け、上記ステム電極上の発光ダイオードチップとボン
ディングワイヤを樹脂で封止してなる発光ダイオード装
置において、ステム電極と発光ダイオードチップと電極
パッドとボンディングワイヤの上記樹脂と接する全表面
に窒化シリコン膜が設けられていることを特徴とする樹
脂封止発光ダイオード装置。(1) A light emitting diode chip is provided on the main surface of the stem electrode, a bonding wire is provided on the light emitting diode chip via an electrode pad at a position different from the stem electrode, and the bonding wire is bonded to the light emitting diode chip on the stem electrode. A light emitting diode device in which a wire is sealed with a resin, characterized in that a silicon nitride film is provided on all surfaces of a stem electrode, a light emitting diode chip, an electrode pad, and a bonding wire that are in contact with the resin. Light emitting diode device.
工程と、当該発光ダイオードチップの電極パッドにボン
ディングワイヤを連接せしめる工程と、 電子サイクロトロンプラズマ化学気相蒸着 （ＥＯＲ・Ｐ−ＯＶＤ）法により、窒化シリコン膜を、
ステム電極と発光ダイオードチップと電極パッドとボン
ディングワイヤの全表面に、形成する工程と、 上記窒化膜に接してエポキシ系樹脂に代表 される封止用樹脂を被覆せしめて、上記発行ダイオード
チップ及びボンディングワイヤを樹脂封止する工程 を少なくとも含むことを特徴とする樹脂封止発光ダイオ
ード装置の製造方法。(2) A process of installing a light emitting diode chip on the stem electrode, a process of connecting a bonding wire to the electrode pad of the light emitting diode chip, and a process of nitriding using an electron cyclotron plasma chemical vapor deposition (EOR/P-OVD) method. silicon film,
A step of forming the stem electrode, the light emitting diode chip, the electrode pad, and the bonding wire on the entire surface, and coating the nitride film with a sealing resin such as an epoxy resin, and bonding the light emitting diode chip and the bonding wire. A method for manufacturing a resin-sealed light emitting diode device, the method comprising at least the step of sealing a wire with a resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60225392A JPS6285481A (en) | 1985-10-09 | 1985-10-09 | Resin-sealed light emitting diode and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60225392A JPS6285481A (en) | 1985-10-09 | 1985-10-09 | Resin-sealed light emitting diode and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6285481A true JPS6285481A (en) | 1987-04-18 |
Family
ID=16828639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60225392A Pending JPS6285481A (en) | 1985-10-09 | 1985-10-09 | Resin-sealed light emitting diode and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6285481A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01226181A (en) * | 1988-03-07 | 1989-09-08 | Mitsubishi Monsanto Chem Co | compound semiconductor device |
| JPH01290270A (en) * | 1988-05-18 | 1989-11-22 | Sanyo Electric Co Ltd | Compound semiconductor and treatment thereof |
| US5298768A (en) * | 1992-02-14 | 1994-03-29 | Sharp Kabushiki Kaisha | Leadless chip-type light emitting element |
| JP2015062261A (en) * | 2010-08-25 | 2015-04-02 | 日亜化学工業株式会社 | Light-emitting device |
| US9306127B2 (en) | 2010-08-25 | 2016-04-05 | Nichia Corporation | Light emitting device that includes protective film having uniform thickness |
| JP2016186975A (en) * | 2015-03-27 | 2016-10-27 | 東レエンジニアリング株式会社 | Led module and led module manufacturing method |
| JP2017126743A (en) * | 2016-01-12 | 2017-07-20 | シチズン電子株式会社 | LED package |
-
1985
- 1985-10-09 JP JP60225392A patent/JPS6285481A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01226181A (en) * | 1988-03-07 | 1989-09-08 | Mitsubishi Monsanto Chem Co | compound semiconductor device |
| JPH0685448B2 (en) * | 1988-03-07 | 1994-10-26 | 三菱化成株式会社 | Compound semiconductor device |
| JPH01290270A (en) * | 1988-05-18 | 1989-11-22 | Sanyo Electric Co Ltd | Compound semiconductor and treatment thereof |
| US5298768A (en) * | 1992-02-14 | 1994-03-29 | Sharp Kabushiki Kaisha | Leadless chip-type light emitting element |
| JP2015062261A (en) * | 2010-08-25 | 2015-04-02 | 日亜化学工業株式会社 | Light-emitting device |
| US9306127B2 (en) | 2010-08-25 | 2016-04-05 | Nichia Corporation | Light emitting device that includes protective film having uniform thickness |
| JP2016186975A (en) * | 2015-03-27 | 2016-10-27 | 東レエンジニアリング株式会社 | Led module and led module manufacturing method |
| JP2017126743A (en) * | 2016-01-12 | 2017-07-20 | シチズン電子株式会社 | LED package |
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