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JPS6262285B2 - - Google Patents

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Publication number
JPS6262285B2
JPS6262285B2 JP16716279A JP16716279A JPS6262285B2 JP S6262285 B2 JPS6262285 B2 JP S6262285B2 JP 16716279 A JP16716279 A JP 16716279A JP 16716279 A JP16716279 A JP 16716279A JP S6262285 B2 JPS6262285 B2 JP S6262285B2
Authority
JP
Japan
Prior art keywords
relative humidity
electrodes
thermoelectromotive force
semiconductor unit
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16716279A
Other languages
Japanese (ja)
Other versions
JPS5689045A (en
Inventor
Mitsuhiro Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP16716279A priority Critical patent/JPS5689045A/en
Publication of JPS5689045A publication Critical patent/JPS5689045A/en
Publication of JPS6262285B2 publication Critical patent/JPS6262285B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Description

【発明の詳細な説明】 この発明は相対湿度センサに関し、特に高相対
湿度あるいは結露状態を検知するための相対湿度
センサに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a relative humidity sensor, and more particularly to a relative humidity sensor for detecting high relative humidity or condensation conditions.

従来より種々の用途に高相対湿度あるいは結露
状態を検出するためのセンサが種々提案されかつ
実現されている。従来の或る種のものでは、1対
の電極間に感湿物質を介在させ、結露時の抵抗値
の急減によつて、結露状態を検出する。また、他
のものでは、たとえばエポキシのような有機高分
子にたとえばカーボン粉末のような導電粒子を混
合し、結露時の有機高分子の膨潤のために導電粒
子相互間の接触が弱まることによる抵抗値の急増
によつて結露状態を検出する。これら従来のもの
は、いずれも、感湿素子ユニツトの抵抗値の変化
に基づいて高相対湿度状態または結露状態を検出
するものである。したがつて、感湿素子ユニツト
に常に或る程度の電流を流し続ける必要がある。
したがつて、感湿素子ユニツトに塵埃等が付着す
ると、それによる影響のために誤まつた検出をす
るなどの問題があつた。
Conventionally, various sensors for detecting high relative humidity or dew condensation conditions have been proposed and realized for various uses. In some conventional devices, a moisture-sensitive substance is interposed between a pair of electrodes, and the state of dew condensation is detected by a sudden decrease in resistance value when condensation occurs. In addition, in other methods, conductive particles such as carbon powder are mixed with organic polymers such as epoxy, and the contact between the conductive particles is weakened due to swelling of the organic polymer during condensation, resulting in resistance. A condensation condition is detected by a sudden increase in value. All of these conventional devices detect a high relative humidity state or a dew condensation state based on a change in the resistance value of a humidity sensing element unit. Therefore, it is necessary to keep a certain amount of current flowing through the humidity sensing element unit.
Therefore, if dust or the like adheres to the moisture sensing element unit, there is a problem that the dust may cause false detection due to its influence.

それゆえに、この発明の主たる目的は、全く新
規な原理に基づいて、安定に高相対湿度状態また
は結露状態を検出し得る相対湿度センサを提供す
ることである。
Therefore, the main object of the present invention is to provide a relative humidity sensor that can stably detect high relative humidity conditions or dew condensation conditions based on a completely new principle.

この発明は、要約すれば、たとえばチタン酸バ
リウム系半導体のような熱起電力効果を有する半
導体のユニツトに、その熱起電力を取出すための
1対の電極を設け、その1対の電極の一方側の近
傍を加熱しておき、電極間に生じる熱起電力の変
化に基づいて、高相対湿度状態または結露状態を
検出するようにしたものである。
In summary, this invention provides a semiconductor unit having a thermoelectromotive force effect, such as a barium titanate-based semiconductor, with a pair of electrodes for extracting the thermoelectromotive force, and one of the pair of electrodes. The vicinity of the side is heated, and a state of high relative humidity or a state of dew condensation is detected based on a change in thermoelectromotive force generated between the electrodes.

この発明の上述の目的およびその他の目的と特
徴は図面を参照して行う以下の詳細な説明から一
層明らかとなろう。
The above objects and other objects and features of the invention will become more apparent from the following detailed description with reference to the drawings.

第1図はこの発明の一実施例を示す図解図であ
る。構成において、たとえばフエライトやチタン
酸バリウム系やチタン酸ストロンチウム系のよう
な半導体材料から成る半導体ユニツト1の両端に
1対の電極2および3を形成する。そして、半導
体ユニツト1の電極2側に、絶縁体4を介してヒ
ータ5を一体的に取付ける。このヒータ5はたと
えばタングステンヒータであり、タングステンペ
ーストを塗布し焼付けてヒータとされた固体ヒー
タとして構成されている。このヒータ5には、ヒ
ータ電源6から比較的小さい電力が与えられる。
また、1対の電極2および3のそれぞれにはリー
ド21および31が接続され、これらリード21
および31はたとえば電圧計のような検出器7に
接続される。
FIG. 1 is an illustrative view showing an embodiment of the present invention. In the structure, a pair of electrodes 2 and 3 are formed at both ends of a semiconductor unit 1 made of a semiconductor material such as ferrite, barium titanate, or strontium titanate. Then, a heater 5 is integrally attached to the electrode 2 side of the semiconductor unit 1 via an insulator 4. This heater 5 is, for example, a tungsten heater, and is configured as a solid heater made by applying and baking tungsten paste. This heater 5 is supplied with relatively small power from a heater power source 6.
Further, leads 21 and 31 are connected to each of the pair of electrodes 2 and 3, and these leads 21 and 31 are connected to each other.
and 31 are connected to a detector 7, for example a voltmeter.

なお、ヒータ5に代えて、加熱手段としてラン
プ8を用いるようにしてもよい。
Note that in place of the heater 5, a lamp 8 may be used as a heating means.

実施例 半導体ユニツト1はチタン酸バリウム系のセラ
ミツクとし、その大きさは長さ20mm×幅10mm×厚
さ0.2mmとした。また、ヒータ5あるいはランプ
8による加熱電力は300mWとした。そして、相
対湿度を零から100%まで変化させ、そのときの
リード21および31からの電圧(熱起電力)を
測定した。その結果を第2図に示す。この第2図
からわかるように、相対湿度が零から90%までは
その発生起電力に大きな変化はない。しかしなが
ら90%を超えるとその発生起電力は急激に小さく
なり、100%では0%のときの約1/10となる。ま た、結露状態ではその熱起電力はほぼ零となつ
た。
Embodiment The semiconductor unit 1 was made of barium titanate ceramic, and its dimensions were 20 mm long x 10 mm wide x 0.2 mm thick. Further, the heating power by the heater 5 or the lamp 8 was 300 mW. Then, the relative humidity was varied from zero to 100%, and the voltage (thermoelectromotive force) from the leads 21 and 31 at that time was measured. The results are shown in FIG. As can be seen from Figure 2, there is no significant change in the generated electromotive force when the relative humidity ranges from zero to 90%. However, when it exceeds 90%, the generated electromotive force decreases rapidly, and at 100% it becomes about 1/10 of that at 0%. Furthermore, in the dew condensation state, the thermoelectromotive force was almost zero.

その後たとえば自然放置によつてまた相対湿度
を小さくし、再び相対湿度を高める方向に変化さ
せた。そのとき第2図に示す特性が再現性よく検
出された。
Thereafter, the relative humidity was lowered again by, for example, being left in the natural environment, and the relative humidity was changed again in the direction of increasing it. At that time, the characteristics shown in FIG. 2 were detected with good reproducibility.

このように、熱起電力が急激に変化するのは、
相対湿度の変化にともなつて水分によりこの半導
体ユニツト1の熱分布が均一化されるためと、電
流リークによるためと考えられる。
This rapid change in thermoelectromotive force is due to
This is thought to be due to the fact that the heat distribution in the semiconductor unit 1 is made uniform due to moisture as the relative humidity changes, and also due to current leakage.

このような相対湿度センサは種々の用途に利用
可能である。たとえば乗用自動車のリヤウインド
の結露センサとして、あるいはビデオテープレコ
ーダの磁気ヘツドの湿度センサなどとして利用可
能である。このような用途に用いるときにも、発
生される熱起電力が比較的大きいので、安定した
検出動作が行える。
Such relative humidity sensors can be used for various purposes. For example, it can be used as a dew condensation sensor for the rear window of a passenger car, or as a humidity sensor for the magnetic head of a video tape recorder. Even when used in such applications, the thermoelectromotive force generated is relatively large, so stable detection operations can be performed.

以上のように、この発明によれば、従来のよう
に抵抗変化に基づいて湿度変化を検出するもので
はないので、感湿素子ユニツトには電流を流す必
要はない。また、ユニツトに流れる電流は極わず
かであるため、それによる特性の変化はほとんど
ない。さらに、加熱手段に消費される電力は非常
に小さくてよく、そのために消費電力の低減が可
能である。それと共に感湿素子ユニツトが半導体
材料であるために、従来のような有機高分子樹脂
等を用いるものに比べて、非常に安定である。さ
らに、従来の抵抗変化によるものとは異なり、発
生される熱起電力に基づいて検出するものである
ので、その検出が確実でかつまた再現性もよい。
その構造が比較的簡単であるので、量産性に優れ
ている。
As described above, according to the present invention, since humidity changes are not detected based on resistance changes as in the prior art, it is not necessary to supply current to the humidity sensing element unit. Furthermore, since the current flowing through the unit is extremely small, there is almost no change in characteristics due to it. Furthermore, the power consumed by the heating means may be very small, thus making it possible to reduce power consumption. In addition, since the moisture-sensitive element unit is made of a semiconductor material, it is extremely stable compared to conventional ones using organic polymer resin or the like. Furthermore, unlike the conventional method based on resistance change, the detection is based on the generated thermoelectromotive force, so the detection is reliable and has good reproducibility.
Since its structure is relatively simple, it is suitable for mass production.

半導体ユニツトとしてセラミツク半導体を用い
れば、非常に安価にかつ安定した検出特性を有す
るセンサが得られる。
If a ceramic semiconductor is used as the semiconductor unit, a sensor having stable detection characteristics can be obtained at a very low cost.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例を示す図解図であ
る。第2図はこの発明の好ましい実施例によつて
達成される検出特性の一例を示すグラフであり、
横軸に相対湿度をとり、縦軸に発生起電力をと
る。 図において、1は半導体ユニツト、2,3は電
極、21,31はリード、4は絶縁体、5はヒー
タ、6はヒータ電源、7は検出器、8はランプを
示す。
FIG. 1 is an illustrative view showing an embodiment of the present invention. FIG. 2 is a graph showing an example of detection characteristics achieved by a preferred embodiment of the present invention;
Relative humidity is plotted on the horizontal axis, and generated electromotive force is plotted on the vertical axis. In the figure, 1 is a semiconductor unit, 2 and 3 are electrodes, 21 and 31 are leads, 4 is an insulator, 5 is a heater, 6 is a heater power source, 7 is a detector, and 8 is a lamp.

Claims (1)

【特許請求の範囲】 1 熱起電力を生じる半導体ユニツト、 前記半導体ユニツトに形成されるかつ前記熱起
電力を取出すための1対の電極、 前記半導体ユニツトの前記1対の電極の一方側
を加熱する加熱手段、および 前記1対の電極から前記熱起電力を取出す手段
を含む、相対湿度センサ。 2 前記加熱手段は前記半導体ユニツトの所定位
置に一体的に取付けられた固体ヒータである、特
許請求の範囲第1項記載の相対湿度センサ。 3 前記加熱手段はランプである、特許請求の範
囲第1項記載の相対湿度センサ。
[Scope of Claims] 1. A semiconductor unit that generates a thermoelectromotive force, a pair of electrodes formed on the semiconductor unit and for extracting the thermoelectromotive force, and heating one side of the pair of electrodes of the semiconductor unit. and a means for extracting the thermoelectromotive force from the pair of electrodes. 2. The relative humidity sensor according to claim 1, wherein the heating means is a solid-state heater integrally attached to a predetermined position of the semiconductor unit. 3. The relative humidity sensor according to claim 1, wherein the heating means is a lamp.
JP16716279A 1979-12-21 1979-12-21 Relative humidity sensor Granted JPS5689045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16716279A JPS5689045A (en) 1979-12-21 1979-12-21 Relative humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16716279A JPS5689045A (en) 1979-12-21 1979-12-21 Relative humidity sensor

Publications (2)

Publication Number Publication Date
JPS5689045A JPS5689045A (en) 1981-07-20
JPS6262285B2 true JPS6262285B2 (en) 1987-12-25

Family

ID=15844560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16716279A Granted JPS5689045A (en) 1979-12-21 1979-12-21 Relative humidity sensor

Country Status (1)

Country Link
JP (1) JPS5689045A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186742A (en) * 1984-03-05 1985-09-24 Yoshio Shimizu Humidity measuring device

Also Published As

Publication number Publication date
JPS5689045A (en) 1981-07-20

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