JPS6261139B2 - - Google Patents
Info
- Publication number
- JPS6261139B2 JPS6261139B2 JP54066781A JP6678179A JPS6261139B2 JP S6261139 B2 JPS6261139 B2 JP S6261139B2 JP 54066781 A JP54066781 A JP 54066781A JP 6678179 A JP6678179 A JP 6678179A JP S6261139 B2 JPS6261139 B2 JP S6261139B2
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- weight
- concentration
- support side
- photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052714 tellurium Inorganic materials 0.000 claims description 21
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 21
- 239000010410 layer Substances 0.000 claims description 14
- 239000002344 surface layer Substances 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 5
- 229910001215 Te alloy Inorganic materials 0.000 claims description 4
- 108091008695 photoreceptors Proteins 0.000 description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- -1 iodine, halogens Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】 本発明は電子写真用感光体に関する。[Detailed description of the invention] The present invention relates to an electrophotographic photoreceptor.
電子写真用セレン感光体の感度を増大せしめる
方法として、テルルを添加することは知られてい
る。しかしながら、その添加量や添加の仕方によ
つて、セレン本来の特性を著しく減じるか、増感
が十分ないなどの欠点があり、実用に供し難いも
のであつた。 Adding tellurium is known as a method of increasing the sensitivity of selenium photoreceptors for electrophotography. However, depending on the amount and method of addition, the inherent properties of selenium may be significantly reduced or sensitization may not be sufficient, making it difficult to put it to practical use.
この点を改善するために、セレン・テルル合金
にハロゲンを添加した感光層を設け、該感光層中
のテルルの分布を層面に平行方向には同一濃度で
あるが、層面に垂直方向には表面に向つて濃度が
漸増するようにするとともに、テルルの濃度を表
面において５〜20重量％、支持体側において５重
量％以下とする電子写真感光板が提案されてい
る。（特開昭50−142036号公報参照）
ところが、テルルの濃度が例えば、支持体側で
５重量％、表層で13重量％の場合のように、濃度
差が大きくなると耐刷性が低下する。すなわち実
機により３万枚のランニングテストを実施した結
果、コピー枚数が増加するにつれて感度が20％程
度低下し、そのため同一絞りでは地肌が汚れると
いう欠点が生じ、また、ブレードクリーニングを
用いた複写機においてはコピー画像に黒スジが発
生した。 In order to improve this point, we provided a photosensitive layer in which halogen was added to a selenium-tellurium alloy, and the distribution of tellurium in the photosensitive layer was adjusted so that the concentration of tellurium in the photosensitive layer was the same in the direction parallel to the layer plane, but on the surface in the direction perpendicular to the layer plane. An electrophotographic photosensitive plate has been proposed in which the concentration of tellurium is gradually increased toward , and the concentration of tellurium is 5 to 20% by weight on the surface and 5% by weight or less on the support side. (Refer to JP-A-50-142036.) However, if the concentration difference becomes large, as in the case where the tellurium concentration is, for example, 5% by weight on the support side and 13% by weight on the surface layer, the printing durability decreases. In other words, as a result of a running test of 30,000 sheets using an actual machine, the sensitivity decreased by about 20% as the number of copies increased, and as a result, there was a drawback that the background became dirty with the same aperture. black lines appeared on the copied image.
また、支持体側のテルルの濃度が５重量％以下
の場合、一般に使用されているアルミニウム支持
体を考えると、バンドギヤツプがセレンに近づく
ために、支持体からのホールの注入が増加し、実
機内での繰り返し使用により残留電位が増加す
る。しかし、テルル濃度が大きくなるにつれて、
バンドギヤツプが低下し、支持体からのホールの
注入が抑制されて、残留電位の増加も抑制でき
る。 In addition, when the concentration of tellurium on the support side is 5% by weight or less, considering the generally used aluminum support, the band gap approaches selenium, increasing the number of holes injected from the support. The residual potential increases with repeated use. However, as the tellurium concentration increases,
The band gap is reduced, hole injection from the support is suppressed, and an increase in residual potential can also be suppressed.
さらに、テルル濃度分布が大きいと感光体の特
性上のバラツキが大きくなり製造上の歩留りが悪
くなる。 Furthermore, if the tellurium concentration distribution is large, variations in the characteristics of the photoreceptor become large, resulting in poor manufacturing yield.
本発明は、以上の点を考慮してなされたもの
で、導電性支持体上に、セレン・テルル合金にハ
ロゲンを添加した感光層を設け、該感光層中のテ
ルルの濃度は支持体側から表層に向つて増加して
おり、支持体側の濃度が６〜18重量％、表層の濃
度が７〜20重量％であり、かつ支持体側と表層と
の濃度差が３重量％以内であることを特徴とする
電子写真用感光体である。 The present invention has been made in consideration of the above points, and includes a photosensitive layer in which halogen is added to a selenium-tellurium alloy on a conductive support, and the concentration of tellurium in the photosensitive layer varies from the support side to the surface layer. The concentration on the support side is 6 to 18% by weight, the concentration on the surface layer is 7 to 20% by weight, and the difference in concentration between the support side and the surface layer is within 3% by weight. This is a photoreceptor for electrophotography.
本発明はかかる構成により、感光体の耐久性を
向上させ、実機内での繰り返し使用による残留電
位の増加を押え、また製品品質のバラツキをなく
すものである。 With this configuration, the present invention improves the durability of the photoreceptor, suppresses the increase in residual potential due to repeated use in an actual machine, and eliminates variations in product quality.
すなわち、テルル濃度は残留電位を抑制する意
味から、最低を６重量％とし、また、感光体とし
ての特性を維持する上から最高を20重量％とし
た。 That is, the tellurium concentration was set at a minimum of 6% by weight in order to suppress the residual potential, and at a maximum of 20% by weight in order to maintain the characteristics as a photoreceptor.
また、テルルの支持体側と表層との濃度差を３
重量％以内に押えた理由は、感光体の表面が摩耗
によつて不均一となり、テルルの濃度が著しく異
なるところが同一表面に出てきて、感度にバラツ
キが出ることを防ぐためである。 In addition, the concentration difference between the tellurium support side and the surface layer was
The reason for keeping the amount within % by weight is to prevent the surface of the photoreceptor from becoming uneven due to wear, and areas with significantly different concentrations of tellurium appearing on the same surface, resulting in variations in sensitivity.
なお、テルルの濃度８〜12重量％の範囲で本発
明の如き濃度分布をもつものが最適の結果を示し
た。 In addition, the best results were obtained with a tellurium concentration distribution in the range of 8 to 12% by weight as in the present invention.
以上の点に関する試験例を示すと、第１図のよ
うにテルルの濃度勾配について３種類の異なる試
料Ａ，Ｂ，Ｃを用意し、その残留電位VR100を測
定した。試料Ａは本発明のテルル濃度の規定に一
致するものであり、試料Ｂ，Ｃは先行技術の例で
ある。結果は第２図に示すとおりで、本発明のテ
ルル濃度分布をもつ試料Ａが、最も残留電位の増
加を抑制できる。 To illustrate a test example regarding the above points, three types of samples A, B, and C with different concentration gradients of tellurium were prepared as shown in FIG. 1, and their residual potentials VR100 were measured. Sample A conforms to the tellurium concentration specifications of the present invention, and Samples B and C are examples of the prior art. The results are shown in FIG. 2, and Sample A, which has the tellurium concentration distribution of the present invention, can suppress the increase in residual potential the most.
ハロゲンは沃素のほか塩素、フツ素、臭素が用
いられ、感光体の増感効果を高め、残留電位を低
くして、感光特性、電気特性共に優れた感光体と
するものである。例えば前記試料Ａにハロゲンと
して沃素を250ppm添加したものは、残留電位飽
和値が140V程度から50V程度と約1/3に低下す
る。 In addition to iodine, halogens such as chlorine, fluorine, and bromine are used to enhance the sensitizing effect of the photoreceptor, lower the residual potential, and make the photoreceptor excellent in both photosensitivity and electrical properties. For example, when 250 ppm of iodine is added as a halogen to the sample A, the residual potential saturation value decreases by about 1/3 from about 140V to about 50V.
ハロゲンの添加量は５〜500ppmが適当で、
5ppm以下では添加効果がなく500ppmを越える
と帯電々位特性が低下し、実使用に耐えなくな
る。 The appropriate amount of halogen added is 5 to 500 ppm.
If it is less than 5 ppm, there is no effect of addition, and if it exceeds 500 ppm, the charging potential characteristics will deteriorate and it will not be suitable for practical use.
つぎに、実施例並びに比較例を示す。 Next, Examples and Comparative Examples will be shown.
実施例
沃素を300ppm添加したたセレン−10重量％テ
ルル合金を抵抗加熱方式の蒸発源に入れ、310℃
において、70℃のアルミニウム支持体上に30分間
蒸着し、60μの厚さの感光層を形成した。層中の
テルルの濃度分布は支持体側８重量％、中間部８
重量％、表層11重量％であつた。Example: A selenium-10% tellurium alloy containing 300 ppm of iodine was placed in a resistance heating evaporation source and heated to 310°C.
The photosensitive layer was deposited on an aluminum support at 70° C. for 30 minutes to form a photosensitive layer with a thickness of 60 μm. The concentration distribution of tellurium in the layer is 8% by weight on the support side and 8% by weight in the middle part.
% by weight, and the surface layer was 11% by weight.
得られた感光体を実機内で100回繰り返し試験
したたところ残留電位は13Vであつた。また３万
枚のランニングテストの結果、画像に黒スジの発
生は認められなかつた。 When the resulting photoreceptor was tested 100 times in an actual machine, the residual potential was 13V. In addition, as a result of a running test of 30,000 images, no black streaks were observed in the images.
比較例
実施例と同じ材料を用い、蒸着温度を280℃と
した以外は同一の方法によつて感光層を形成し
た。層中のテルルの濃度分布は、支持体側５重量
％、中間部８重量％、表層13重量％であつた。Comparative Example A photosensitive layer was formed using the same materials as in the example and by the same method except that the deposition temperature was 280°C. The concentration distribution of tellurium in the layer was 5% by weight on the support side, 8% by weight in the middle part, and 13% by weight in the surface layer.
得られた感光体を実機内で100回繰り返し試験
をしたところ、残留電位は52Vであつた。また３
万枚のランニングテストの結果、画像に黒スジの
発生が認められた。 When the resulting photoreceptor was tested 100 times in an actual machine, the residual potential was 52V. Also 3
As a result of a running test of 10,000 images, black streaks were observed in the images.
第１図は試験試料のテルル濃度分布を示す図、
第２図は残留電位の試験結果を示す。
Figure 1 is a diagram showing the tellurium concentration distribution of the test sample;
Figure 2 shows the residual potential test results.
Claims (1)
ロゲンを添加した感光層を設け、該感光層中のテ
ルルの濃度は支持体側から表層に向つて増加して
おり、支持体側の濃度が６〜18重量％、表層の濃
度が７〜20重量％であり、かつ支持体側と表層と
の濃度差が３重量％以内であることを特徴とする
電子写真用感光体。1 A photosensitive layer in which halogen is added to a selenium-tellurium alloy is provided on a conductive support, and the concentration of tellurium in the photosensitive layer increases from the support side toward the surface layer, and the concentration on the support side is 6 to 6. 18% by weight, the density of the surface layer is 7 to 20% by weight, and the difference in density between the support side and the surface layer is within 3% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6678179A JPS55159446A (en) | 1979-05-31 | 1979-05-31 | Electrophotographic receptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6678179A JPS55159446A (en) | 1979-05-31 | 1979-05-31 | Electrophotographic receptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55159446A JPS55159446A (en) | 1980-12-11 |
| JPS6261139B2 true JPS6261139B2 (en) | 1987-12-19 |
Family
ID=13325746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6678179A Granted JPS55159446A (en) | 1979-05-31 | 1979-05-31 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55159446A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5748737A (en) * | 1980-09-08 | 1982-03-20 | Ricoh Co Ltd | Electrophotographic receptor |
| JPS5937862A (en) * | 1982-08-27 | 1984-03-01 | Alps Electric Co Ltd | Mounting method for pulley of small-sized motor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50142036A (en) * | 1974-05-01 | 1975-11-15 |
-
1979
- 1979-05-31 JP JP6678179A patent/JPS55159446A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50142036A (en) * | 1974-05-01 | 1975-11-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55159446A (en) | 1980-12-11 |
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