JPS6255302B2 - - Google Patents
Info
- Publication number
- JPS6255302B2 JPS6255302B2 JP56174302A JP17430281A JPS6255302B2 JP S6255302 B2 JPS6255302 B2 JP S6255302B2 JP 56174302 A JP56174302 A JP 56174302A JP 17430281 A JP17430281 A JP 17430281A JP S6255302 B2 JPS6255302 B2 JP S6255302B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- insulating substrate
- lead frame
- manufacturing
- dip type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
この発明はDIP型ケースの製造方法かかり、特
に多数リードを有するDIP型硝子ケースの製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a DIP type case, and more particularly to a method for manufacturing a DIP type glass case having multiple leads.
従来の硝子ケースの製造方法は絶縁基板上に硝
子材料を介してDIP型リードフレームを固着し
DIP型ケースを製造していた。 The conventional manufacturing method for glass cases is to fix a DIP type lead frame onto an insulating substrate via glass material.
Manufactured DIP type cases.
すなわち、従来のDIP型硝子ケースはリードフ
レームを薄板から打抜き、さらに所定の位置で折
り曲げた状態のDIP型リードフレームを用いて絶
縁基板上の硝子材料を介して固着する方法で製造
していた。しかしながら、リードフレームが24リ
ード以上の多数リードになつた場合DIP型リード
フレーム、特に端部のリードは、金属細線で配線
するリード先端部から折り曲げ部までの距離が長
い為、リード先端部の安定性なくなる。それゆ
え、リードフレームのリード先端のバラツキが大
きくなりさらにリード先端部の位置精度も低下し
絶縁基板上の硝子材料に均一に固着することが出
来なかつた。その為にDIP型硝子ケースを製造し
た後の半導体素子の組立を安定に行なうことが出
来ず、組立工程の自動化を容易に行なうことも出
来なかつた。 In other words, conventional DIP-type glass cases were manufactured by punching a lead frame from a thin plate, then using the DIP-type lead frame bent at a predetermined position and fixing it to an insulating substrate via a glass material. However, when the lead frame has a large number of leads (24 leads or more), the DIP type lead frame, especially the end leads, has a long distance from the lead tip to the bent part where the wire is wired with thin metal wire, so the lead tip becomes unstable. I lose my sex. Therefore, the dispersion of the lead tips of the lead frame becomes large, and the positional accuracy of the lead tips also decreases, making it impossible to uniformly fix the leads to the glass material on the insulating substrate. For this reason, it was not possible to stably assemble the semiconductor elements after manufacturing the DIP type glass case, and it was also not possible to easily automate the assembly process.
本発明の目的は上述したDIP型硝子ケースの製
造方法を改良し組立工程における品質の安定化、
組立工程の自動化を計つたDIP型硝子ケースの製
造方法を提供するものである。 The purpose of the present invention is to improve the manufacturing method of the above-mentioned DIP type glass case, stabilize the quality in the assembly process,
This invention provides a method for manufacturing a DIP type glass case that automates the assembly process.
本発明の特徴は、硝子封止する領域外であつて
かつ折り曲げ部となる位置の近傍に各リード間を
固定する連結部を有するフラツトリードフレーム
を絶縁基板上の硝子材料を介して固着する工程
と、しかる後に前記絶縁基板上に半導体素子を搭
載する前に、各リード間を固定する前記連結部を
切断し、折り曲げ部で前記各リードを折り曲げる
工程とを有するDIP型ケースの製造方法にある。 A feature of the present invention is that a flat lead frame having a connecting part for fixing each lead outside the area to be sealed with glass and near the position where the lead is to be bent is fixed via a glass material on an insulating substrate. and then, before mounting a semiconductor element on the insulating substrate, cutting the connecting portion that fixes each lead and bending each lead at a bending portion. be.
次に本発明の実施例を説明する。第１図に示す
様に絶縁基板１上に硝子材料２を形形成する工程
と、２図に示す様に硝子材料２と接触しない領域
で、しかも所定の位置で折り曲げる部分から離れ
た位置にリードフレームのリード３間を連結する
連結部４を有するフラツトリードフレーム５を用
いて絶縁基板１上の硝子材料２に固着する工程
と、第３図に示す様に連結部４を切断して所定の
位置で折り曲げを行なう工程とを含むDIP型硝子
ケース６の製造方法である。 Next, embodiments of the present invention will be described. The step of forming the glass material 2 on the insulating substrate 1 as shown in FIG. 1, and the step of forming the glass material 2 on the insulating substrate 1 as shown in FIG. A process of fixing to the glass material 2 on the insulating substrate 1 using a flat lead frame 5 having a connecting part 4 connecting between the leads 3 of the frame, and cutting the connecting part 4 into a predetermined shape as shown in FIG. This is a method of manufacturing a DIP type glass case 6, which includes a step of bending at the position.
この様なDIP型硝子ケース製造方法はリードフ
レームのリード先端のバラツキがリード間を固定
する連結部で保持されており、しかも、リードフ
レーム製造時のプレス工程の歪みもフラツト型リ
ードフレムである為極くわずかに押えられ、リー
ドフレームのリード先端位置精度を確保すること
が出来るから、絶縁基板上の硝子材料に均一に固
着すること出来る。しかも絶縁基板上の硝子にフ
ラツトリードフレームを固着したのちにDIP型硝
子ケースを製造するためにリードフレームの折り
曲げ時のリード先端のバラツキは発生しない。 In this DIP type glass case manufacturing method, variations in the lead ends of the lead frame are held by the joints that fix the leads, and distortions in the pressing process during lead frame manufacturing are minimized because the flat lead frame is used. Since the lead frame is slightly pressed down and the positional accuracy of the lead tip of the lead frame can be ensured, it is possible to uniformly adhere to the glass material on the insulating substrate. Moreover, since the DIP type glass case is manufactured after the flat lead frame is fixed to the glass on the insulating substrate, there is no variation in the lead tips when the lead frame is bent.
従つて、24リード以上を有するリードフレーム
の絶縁基板上の硝子材料の固着が安定にしかも均
一に行なう事が出来る。 Therefore, it is possible to stably and uniformly fix the glass material on the insulating substrate of a lead frame having 24 or more leads.
以上説明した様にこの発明によるDIP型硝子ケ
ースの製造方法は多数リードを有するDIP型硝子
ケースを品質よく安定に製造することが出来る。 As explained above, the method for manufacturing a DIP type glass case according to the present invention can stably manufacture a DIP type glass case having a large number of leads with good quality.
第１図、第２図および第３図は本発明のDIP型
硝子ケース製造方法を示す図である。
尚、図において、１……絶縁基板、２……硝子
材料、３……リード、４……連結部、５……フラ
ツトリードフレーム、６……DIP型硝子ケース、
７……折り曲げ部である。
FIGS. 1, 2, and 3 are diagrams showing the DIP type glass case manufacturing method of the present invention. In the figure, 1...Insulating substrate, 2...Glass material, 3...Lead, 4...Connecting part, 5...Flat lead frame, 6...DIP type glass case,
7...This is a bent portion.
Claims (1)
となる位置の近傍に各リード間を固定する第１の
連結部と、前記第１の連結部の外側に前記各リー
ドの端部間を固定する第２の連結部とを有するフ
ラツトリードフレームを絶縁基板上の硝子材料を
介して固着する工程と、しかる後前記絶縁基板上
に半導体素子を搭載する前に、各リード間を固定
する前記第１の連結部を切断し、折り曲げ部で前
記各リードを折り曲げる工程とを有することを特
徴とするDIP型ケースの製造方法。1. A first connecting part that fixes between the leads outside the area to be sealed with glass and near a position that will become a bending part, and a first connecting part that fixes the ends of each lead outside of the first connecting part. a step of fixing a flat lead frame having a second connecting portion on an insulating substrate via a glass material, and then fixing between each lead before mounting a semiconductor element on the insulating substrate. A method for manufacturing a DIP type case, comprising the steps of cutting the first connecting portion and bending each lead at the bending portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17430281A JPS5874061A (en) | 1981-10-29 | 1981-10-29 | Manufacture of dip type case |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17430281A JPS5874061A (en) | 1981-10-29 | 1981-10-29 | Manufacture of dip type case |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5874061A JPS5874061A (en) | 1983-05-04 |
| JPS6255302B2 true JPS6255302B2 (en) | 1987-11-19 |
Family
ID=15976282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17430281A Granted JPS5874061A (en) | 1981-10-29 | 1981-10-29 | Manufacture of dip type case |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5874061A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0622266B2 (en) * | 1986-09-17 | 1994-03-23 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50110772A (en) * | 1974-02-08 | 1975-09-01 | ||
| JPS5159269A (en) * | 1974-11-20 | 1976-05-24 | Nippon Electric Co | Handotaisochino seizohoho |
| JPS5386575A (en) * | 1977-01-10 | 1978-07-31 | Mitsubishi Electric Corp | Production of semiconductor device |
| JPS5390867A (en) * | 1977-01-21 | 1978-08-10 | Hitachi Ltd | Glass hermetic sealing for lead wire |
-
1981
- 1981-10-29 JP JP17430281A patent/JPS5874061A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50110772A (en) * | 1974-02-08 | 1975-09-01 | ||
| JPS5159269A (en) * | 1974-11-20 | 1976-05-24 | Nippon Electric Co | Handotaisochino seizohoho |
| JPS5386575A (en) * | 1977-01-10 | 1978-07-31 | Mitsubishi Electric Corp | Production of semiconductor device |
| JPS5390867A (en) * | 1977-01-21 | 1978-08-10 | Hitachi Ltd | Glass hermetic sealing for lead wire |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5874061A (en) | 1983-05-04 |
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