JPS6242244U - - Google Patents
Info
- Publication number
- JPS6242244U JPS6242244U JP13474385U JP13474385U JPS6242244U JP S6242244 U JPS6242244 U JP S6242244U JP 13474385 U JP13474385 U JP 13474385U JP 13474385 U JP13474385 U JP 13474385U JP S6242244 U JPS6242244 U JP S6242244U
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- contact hole
- multilayer wiring
- wiring device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図はこの考案の第一の実施例を示す平面図
、第２図はその断面図、第３図はこの考案の第二
の実施例を示す平面図、第４図はこの考案の第三
の実施例を示す平面図、第５図はこの考案の第四
の実施例を示す平面図、第６図はこの考案の第五
の実施例を示す平面図、第７図は従来例を示す平
面図、第８図はその断面図である。
１……基板、２……下部電極、３……層間絶縁
膜、５……上部電極、６……コンタクトホール、
７……凹凸状部、９〜１２……凹凸状部。
Fig. 1 is a plan view showing the first embodiment of this invention, Fig. 2 is a sectional view thereof, Fig. 3 is a plan view showing the second embodiment of this invention, and Fig. 4 is a plan view showing the second embodiment of this invention. FIG. 5 is a plan view showing the fourth embodiment of this invention, FIG. 6 is a plan view showing the fifth embodiment of this invention, and FIG. 7 is a plan view showing the conventional example. The plan view shown in FIG. 8 is a sectional view thereof. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Lower electrode, 3... Interlayer insulating film, 5... Upper electrode, 6... Contact hole,
7... Uneven portion, 9-12... Uneven portion.
Claims (1)
部電極とを有し、前記層間絶縁膜に形成したコン
タクトホールを介して下部電極と上部電極とを接
続する多層配線デバイスにおいて、前記コンタク
トホールを少なくともその一辺又は一部に凹凸状
部を含む形状に形成したことを特徴とする多層配
線デバイス。 In a multilayer wiring device that has at least a lower electrode, an interlayer insulating film, and an upper electrode on a substrate, and connects the lower electrode and the upper electrode via a contact hole formed in the interlayer insulating film, the contact hole is connected to at least one of the contact holes. A multilayer wiring device characterized in that it is formed in a shape that includes an uneven portion on one side or a part thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985134743U JPH0546274Y2 (en) | 1985-09-03 | 1985-09-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985134743U JPH0546274Y2 (en) | 1985-09-03 | 1985-09-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6242244U true JPS6242244U (en) | 1987-03-13 |
| JPH0546274Y2 JPH0546274Y2 (en) | 1993-12-03 |
Family
ID=31036269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985134743U Expired - Lifetime JPH0546274Y2 (en) | 1985-09-03 | 1985-09-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0546274Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016171150A (en) * | 2015-03-11 | 2016-09-23 | 株式会社東芝 | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6079748A (en) * | 1983-10-06 | 1985-05-07 | Sanyo Electric Co Ltd | Multilayer interconnection structure for semiconductor integrated circuit |
-
1985
- 1985-09-03 JP JP1985134743U patent/JPH0546274Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6079748A (en) * | 1983-10-06 | 1985-05-07 | Sanyo Electric Co Ltd | Multilayer interconnection structure for semiconductor integrated circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016171150A (en) * | 2015-03-11 | 2016-09-23 | 株式会社東芝 | Semiconductor device |
| US9947574B2 (en) | 2015-03-11 | 2018-04-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546274Y2 (en) | 1993-12-03 |