JPS6239001A - Voltage non-linear resistance element - Google Patents
Voltage non-linear resistance elementInfo
- Publication number
- JPS6239001A JPS6239001A JP60179149A JP17914985A JPS6239001A JP S6239001 A JPS6239001 A JP S6239001A JP 60179149 A JP60179149 A JP 60179149A JP 17914985 A JP17914985 A JP 17914985A JP S6239001 A JPS6239001 A JP S6239001A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance element
- voltage
- voltage non
- zinc oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
本発明は、酸化亜鉛を主体とし、それのみで電圧非直線
抵抗特性を得る磁器である電圧非直線抵抗素子に関する
。The present invention relates to a voltage nonlinear resistance element that is made of porcelain that is mainly made of zinc oxide and that obtains voltage nonlinear resistance characteristics by itself.
酸化亜鉛を主体とする電圧非直線抵抗素子は、ZnOに
Co+ Pr、 K 、Cr等を添加したもの、あるい
はBi+ Sb+ Co、 Cr等を添加したものが知
られており、いずれも通常の窯業技術により円盤状の抵
抗体に成形され、銀ペースト等で電橋を形成した後、リ
ード線をはんだ付けし、樹脂で被覆したものが市場に供
せられている。しかしながらこのような抵抗素子におい
ては、リード線が付けられた後の抵抗体表面において漏
れ電流が生じて低電流領域の非直線特性の劣化を来し、
製造者側においては歩留りの低下が、また使用者側にお
いては装着後の動作不良という問題があった。この対策
として円盤状に形成される抵抗体表面にガラス賞を同時
焼成して表面抵抗を高くする方法あるいは抵抗体表面に
存機被膜を設ける方法などの対策が講じられているが、
いずれもコストが大幅に増加する欠点がある。
別の問題として電圧非直線抵抗体の表面研摩の際、側面
が損耗しやすいので抵抗体の表面硬度がさらに高いこと
が望まれる。Voltage non-linear resistance elements mainly made of zinc oxide are known as ZnO with Co+Pr, K, Cr, etc. added, or Bi+Sb+Co, Cr, etc. added, and both are made using ordinary ceramic technology. The resistor is molded into a disc-shaped resistor using silver paste, an electric bridge is formed using silver paste, etc., the lead wires are soldered, and the resistor is coated with resin, and then sold on the market. However, in such a resistance element, leakage current occurs on the surface of the resistor after the lead wire is attached, resulting in deterioration of the nonlinear characteristics in the low current region.
Manufacturers have had problems with reduced yields, and users have had problems with malfunctions after installation. Countermeasures have been taken to counter this problem, such as increasing the surface resistance by co-firing a glass coating on the surface of the resistor, which is formed in a disc shape, or providing a residual film on the resistor surface.
Both methods have the disadvantage of significantly increasing costs. Another problem is that when polishing the surface of a voltage nonlinear resistor, the side surfaces are likely to be worn away, so it is desired that the surface hardness of the resistor be even higher.
本発明は、上述の問題を解決して、コストを大幅に増加
させることなく抵抗体の表面の絶縁特性を改善し、表面
硬度を高くした電圧非直線抵抗素子を提供することを目
的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a voltage nonlinear resistance element that improves the insulation characteristics of the surface of a resistor and increases the surface hardness without significantly increasing cost.
本発明によれば、電圧非直線抵抗素子が酸化亜鉛を主体
とし、少なくともランタン系稀土類元素(L a +
C’e + P r + N d 1S−1τb、 D
y)の1つと珪素とを含んだ原料を焼成してなる抵抗体
を存し、この抵抗体が表面にランタン系稀土類元素をL
nとして表わしたときに’bnxos ・SiOx、
LntOx H25iftあるいは2Lng03 ・
3 Stoヨの複合珪酸化合物の析出針状晶を存するこ
とにより上記の目的が達成される。According to the present invention, the voltage nonlinear resistance element is mainly made of zinc oxide and contains at least a lanthanum-based rare earth element (L a +
C'e + P r + N d 1S-1τb, D
y) and silicon, and this resistor has a lanthanum-based rare earth element on its surface.
When expressed as n, 'bnxos ・SiOx,
LntOx H25ift or 2Lng03 ・
The above object is achieved by the presence of precipitated acicular crystals of the composite silicate compound of 3.
実施例1:
酸化亜鉛を主原料とし、これに1.5原子%のCr。
065原子%のPr+0.2原子%のに、0.2原子%
のCrを添加し、さらにSiを100原子ppm添加し
、ボールミルで十分混合したのち、スプレードライヤに
よって造粒した粉末を直径15鶴、厚さ3簡に打錠し、
これを1300℃にて1時間焼成した。第1図はこの焼
成体の表面の金属顕微鏡写真で、Siを添加しない従来
の酸化亜鉛電圧非直&I抵抗体の表面の金属U徽鏡写真
である第2因に見られない針状晶の析出が示されている
。この針状晶を走査型電顕およびX&1回折により分析
したところ、Prtys ・S10.で表わされる複
合珪酸化合物であることが判明した。この針状晶析出面
は、Siを添加しないものの表面にくらべ、第1表に示
すように高い表面抵抗と硬度を示すことがわかった。そ
して電圧非直線抵抗特性の低下は認められなかった。
第1表
実施例2:
酸化亜鉛を原料とし、Bib、 5原子%、sbo、s
原子%、Go1.0原子%、Cr0.5原子%を添加し
、さらにPrとSiをそれぞれ100原子ppm添加し
、実施例1と同様にして焼成し、表面観察をしたところ
、第1図に示した実施例1と同様のPr103 ・S
to、の針状化合物の析出が確認され、電圧非直線抵抗
体としてもPr、SLを含まない従来のものと遜色のな
いものが得られた。
実施例1.2共にその焼成温度を高(すれば、表面抵抗
値、li!度がさらに高まることがVIi認されたが、
1350℃を越えると本来の電圧非直線抵抗体としての
性能が著しく低下し、実用に供し得ない。
またStの添加量が80原子PPm以下では針状晶の発
生が少なく、表面改質効果が見られず、一方500原子
pps+を越えると電圧非直線抵抗体としての性能低下
をきたす、なお上記実施例ではランタン系稀土類元素と
してPrを用いたが、他の積土M酸化物の含有の場合も
同様の効果が得られることが確かめられた。
【発明の効果]
本発明は、酸化亜鉛を主体とする電圧非直線抵抗体にお
いて原料自体にランタン系稀土類元素と珪素を添加する
ことにより、電気抵抗および機械的強度の高い表面層を
形成するもので、表面漏れ電流による非直線特性の低下
がなく、表面研摩時の側面の損耗のない信頼性の高い酸
化亜鉛電圧非直線抵抗素子をほとんどコストの増加なし
に市場に提供することができた。Example 1: Zinc oxide is used as the main raw material, and 1.5 at.% of Cr is added to it. 0.065 atomic% Pr+0.2 atomic%, 0.2 atomic%
of Cr and further added 100 at.
This was baked at 1300°C for 1 hour. Figure 1 is a metallurgical micrograph of the surface of this fired body, which shows acicular crystals that are not seen in the second factor, which is a metallographic micrograph of the surface of a conventional zinc oxide voltage non-direct & I resistor without Si added. Precipitation is shown. When this needle crystal was analyzed by scanning electron microscopy and X&1 diffraction, it was found that Prtys S10. It turned out to be a complex silicate compound represented by It was found that the surface on which the acicular crystals were deposited exhibited higher surface resistance and hardness, as shown in Table 1, than the surface without Si added. No decrease in voltage nonlinear resistance characteristics was observed. Table 1 Example 2: Using zinc oxide as raw material, Bib, 5 at%, sbo, s
% of Go, 1.0 atomic% of Go, 0.5 atomic% of Cr, and 100 atomic ppm each of Pr and Si were added, fired in the same manner as in Example 1, and the surface was observed, as shown in Figure 1. Pr103 ・S similar to Example 1 shown
Precipitation of acicular compounds of to was confirmed, and a voltage non-linear resistor comparable to the conventional one which does not contain Pr or SL was obtained. In both Examples 1 and 2, it was recognized that if the firing temperature was increased, the surface resistance value and li! degree would further increase.
If the temperature exceeds 1350°C, the original performance as a voltage non-linear resistor will be significantly degraded and it cannot be put to practical use. Furthermore, if the amount of St added is less than 80 atomic ppm, the generation of needle crystals is small and no surface modification effect is observed, while if it exceeds 500 atomic pps+, the performance as a voltage nonlinear resistor will deteriorate. In the example, Pr was used as the lanthanum-based rare earth element, but it was confirmed that similar effects could be obtained when other earthwork M oxides were included. [Effects of the Invention] The present invention forms a surface layer with high electrical resistance and mechanical strength by adding a lanthanum-based rare earth element and silicon to the raw material itself in a voltage nonlinear resistor mainly made of zinc oxide. As a result, we were able to provide the market with a highly reliable zinc oxide voltage nonlinear resistance element that does not suffer from deterioration of nonlinear characteristics due to surface leakage current and does not suffer from wear on the sides during surface polishing, with almost no increase in cost. .
第1図は本発明の一実施例の抵抗体の表面顕微鏡写真、
第2図は従来の抵抗体の表面顕微鏡写真である。
第11刀
手続補正黴ヵ埒
昭和60年12月26日
特許庁 長 官 −宇」t1コ証−殿】、事件の表
示 榊昭ω−/7.pQ’、gp3、補正をする者
事件との関係 出願人
使 所 川崎市川崎区田辺新田1番1号名
称 +5231富士電機株式会社(ほか 名)
4、代 理 人
住 所 川崎市川崎区田辺新田1番1号明細書第6
頁第4行目及び第5行目に「抵抗体の表面顕微鏡写真」
とあるのを「抵抗体の金属組織を示す顕微鏡写真」と補
正する。FIG. 1 is a surface micrograph of a resistor according to an embodiment of the present invention.
FIG. 2 is a surface micrograph of a conventional resistor. 11th Sword Proceedings Amendment Case December 26, 1985 Director-General of the Patent Office t1 Co., Ltd.], Incident Display Sakaki Sho ω-/7. pQ', gp3, relationship with the case of the person making the amendment Applicant's Embassy Name: 1-1 Tanabe Shinden, Kawasaki-ku, Kawasaki City
Name: +5231 Fuji Electric Co., Ltd. (other names) 4. Agent Address: 1-1 Tanabe Shinden, Kawasaki-ku, Kawasaki City Specification No. 6
"Surface micrograph of resistor" on the 4th and 5th lines of the page
The text has been corrected to read, ``Microphotograph showing the metal structure of a resistor.''
Claims (1)
元素の一つと珪素とを含んだ原料を焼成してなる抵抗体
を有することを特徴とする電圧非直線抵抗素子。 2)特許請求の範囲第1項記載の素子において、珪素の
原料への添加量が80原子ppm以上、500原子PP
m以下であることを特徴とする電圧非直線抵抗素子。[Scope of Claims] 1) A voltage nonlinear resistance element characterized by having a resistor formed by firing a raw material mainly composed of zinc oxide and containing at least one lanthanum-based rare earth element and silicon. 2) In the device according to claim 1, the amount of silicon added to the raw material is 80 atomic ppm or more and 500 atomic ppm.
A voltage nonlinear resistance element characterized in that the voltage is less than or equal to m.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60179149A JPS6239001A (en) | 1985-08-14 | 1985-08-14 | Voltage non-linear resistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60179149A JPS6239001A (en) | 1985-08-14 | 1985-08-14 | Voltage non-linear resistance element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6239001A true JPS6239001A (en) | 1987-02-20 |
JPH0422323B2 JPH0422323B2 (en) | 1992-04-16 |
Family
ID=16060819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60179149A Granted JPS6239001A (en) | 1985-08-14 | 1985-08-14 | Voltage non-linear resistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6239001A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002043105A (en) * | 2000-07-31 | 2002-02-08 | Matsushita Electric Ind Co Ltd | Zinc oxide varistor and method of manufacturing the same |
JP2005195178A (en) * | 2004-01-06 | 2005-07-21 | Eaton Corp | Liquid-gas type hydraulic accumulator |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56140602A (en) * | 1980-04-04 | 1981-11-04 | Tdk Electronics Co Ltd | Semiconductor composition |
-
1985
- 1985-08-14 JP JP60179149A patent/JPS6239001A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56140602A (en) * | 1980-04-04 | 1981-11-04 | Tdk Electronics Co Ltd | Semiconductor composition |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002043105A (en) * | 2000-07-31 | 2002-02-08 | Matsushita Electric Ind Co Ltd | Zinc oxide varistor and method of manufacturing the same |
JP2005195178A (en) * | 2004-01-06 | 2005-07-21 | Eaton Corp | Liquid-gas type hydraulic accumulator |
Also Published As
Publication number | Publication date |
---|---|
JPH0422323B2 (en) | 1992-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW416175B (en) | Subminiature surface mounted circuit protector | |
JPS6239001A (en) | Voltage non-linear resistance element | |
US4338223A (en) | Method of manufacturing a voltage-nonlinear resistor | |
JPS59117202A (en) | Voltage and current nonlinear resistor | |
JPS59189604A (en) | Method of producing nonlinear resistor | |
JP2985527B2 (en) | Method of manufacturing voltage non-linear resistor | |
JPS59189605A (en) | Nonlinear resistor | |
JPS62134903A (en) | Voltage-dependant nonlinear resistance porcelain compound | |
JPS63122101A (en) | Voltage nonlinear resistor | |
JP2819483B2 (en) | Nonlinear two-terminal element | |
JPS6150302A (en) | Voltage nonlinear resistor | |
JPS60142503A (en) | Varistor | |
JPS5918601A (en) | Voltage nonlinear resistor and method of producing same | |
JPS60144903A (en) | Varistor | |
JPS6296667A (en) | Thin film production method | |
JPS643325B2 (en) | ||
JP2649545B2 (en) | Electrode formation method of zinc oxide type varistor | |
JPS5914602A (en) | Voltage nonlinear resistor and method of producing same | |
JPS6015901A (en) | Nonlinear resistor | |
JPS5917207A (en) | Voltage nonlinear resistor and method of producing same | |
JPS60136213A (en) | Method of producing composite function element | |
JPH01226116A (en) | Voltage-dependent non-linear resistor element | |
JPS60206003A (en) | Nonlinear resistor | |
JPS59175704A (en) | Voltage nonlinear resistance porcelain | |
JPS59104104A (en) | Method of producing voltage nonlinear resistance element |