JPS62298917A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPS62298917A JPS62298917A JP14030186A JP14030186A JPS62298917A JP S62298917 A JPS62298917 A JP S62298917A JP 14030186 A JP14030186 A JP 14030186A JP 14030186 A JP14030186 A JP 14030186A JP S62298917 A JPS62298917 A JP S62298917A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording medium
- magnetic recording
- film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 39
- 239000010410 layer Substances 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000011241 protective layer Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910018557 Si O Inorganic materials 0.000 claims abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 22
- 238000004544 sputter deposition Methods 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 238000007666 vacuum forming Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 208000028659 discharge Diseases 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910020641 Co Zr Inorganic materials 0.000 description 2
- 229910020520 Co—Zr Inorganic materials 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910020676 Co—N Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 229910017315 Mo—Cu Inorganic materials 0.000 description 1
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
S、発明の詳細な説明
〔産業上の利用分野〕
本発明はΦ性薄膜をs性層とする磁気記録媒体、特に本
発明は高湿条件下においても走行耐久性に優れた垂直磁
化記録6体に関する、
〔従来の技術〕
近年、記録媒体の膜面に対して垂直な方向にS化容易軸
を有する磁気記録媒体を用いる垂直S化記録方式が程案
されている。この垂直S化記録方式では、記〃密度が高
まるほど記録媒体中の反S界が減少するため、優れた再
生出力が得られ本質的に高密度記録に適した方式といえ
2ン。Detailed Description of the Invention S. Detailed Description of the Invention [Industrial Application Field] The present invention relates to a magnetic recording medium having a Φ-type thin film as an s-type layer, and in particular, the present invention provides a magnetic recording medium that has running durability even under high humidity conditions. [Prior art] In recent years, a perpendicular S-magnetization recording system using a magnetic recording medium having an S-easy axis in a direction perpendicular to the film surface of the recording medium has been proposed. There is. In this vertical S recording method, the anti-S field in the recording medium decreases as the recording density increases, so excellent reproduction output can be obtained and it is essentially a method suitable for high-density recording.
かかる垂直磁化記録方式の磁気配偶・を行なうには、記
録媒体の膜面に対して垂直な方向に磁化容易軸を有する
金属薄膜型磁気記録媒体を必要とする。このような金属
薄膜型磁気記録媒体としては、高分子材料或いは非磁性
金属等の非礎性材料から成る支持体上に、Co−Cr合
金等を蒸着、スパッタリング法、イオンブレーティング
法等(以下、本発明では真空薄膜形成法と云う)が知ら
れているO
また、垂直s比記録再生時の記録再生効率の改善を図る
ため、前記のCo−Cr合金膜より成る垂直磁気記録層
の下に下地層として軟磁性材料より成る高透磁率層、例
えば、パーマロイ(N i −F e系合金)膜を設け
た、いわゆる二層膜型の垂直磁気記録媒体が知られてい
る。In order to carry out the magnetic coupling of such a perpendicular magnetization recording method, a metal thin film type magnetic recording medium having an axis of easy magnetization in a direction perpendicular to the film surface of the recording medium is required. Such metal thin film magnetic recording media can be produced by vapor deposition, sputtering, ion blating, etc. (hereinafter referred to as In addition, in order to improve the recording and reproducing efficiency during perpendicular S-ratio recording and reproducing, a method for forming a thin film under the perpendicular magnetic recording layer made of the above-mentioned Co-Cr alloy film is used. A so-called two-layer perpendicular magnetic recording medium is known, in which a high magnetic permeability layer made of a soft magnetic material, for example, a permalloy (Ni-Fe alloy) film is provided as an underlayer.
しかしながら、このような金属薄膜型磁気記録媒体にお
いては走行耐久性や耐磨耗性に劣るという問題がある。However, such metal thin film magnetic recording media have a problem of poor running durability and abrasion resistance.
このような欠点を防止する方法として熱可塑性樹脂や熱
硬化性樹脂よりなる保護層を磁性層表面に設けることが
提案されているが、ヘッドと磁性層間のスペーシングロ
スのため保護層の厚さを大きくできないという制約があ
るため充分な効果が得られていない。As a method to prevent such defects, it has been proposed to provide a protective layer made of thermoplastic resin or thermosetting resin on the surface of the magnetic layer, but the thickness of the protective layer is limited due to spacing loss between the head and the magnetic layer. Since there is a restriction that it cannot be made large, sufficient effects cannot be obtained.
磁気記録媒体の保護層として、母性メッキ層の耐摩耗性
を改良するためK、炭素系保護層を蒸着によって設ける
ことが提案されている(特公昭54−33521号公報
)。As a protective layer for a magnetic recording medium, it has been proposed to provide a K or carbon-based protective layer by vapor deposition in order to improve the abrasion resistance of the mother plating layer (Japanese Patent Publication No. 33521/1983).
このような炭素系保護層と前記の如き真空薄膜形成法に
よる金属薄膜型磁気記録媒体に適用したところ、常湿下
での走行耐久性は向上したが、高湿下で保存した場合や
高湿下で走行させた場合の走行耐久性が著しく劣化した
・すなわち、例えば、80%RH程度の高湿下では保護
層の密着性が悪くなり、はがれや膜落ちを生じ、極端な
場合には走行とストップせざるを得なくなった。When such a carbon-based protective layer and the above-mentioned vacuum thin film formation method were applied to a metal thin film type magnetic recording medium, the running durability under normal humidity improved, but when stored under high humidity or high humidity The running durability has deteriorated significantly when running under low conditions. For example, under high humidity conditions of around 80% RH, the adhesion of the protective layer deteriorates, resulting in peeling and film falling, and in extreme cases, running I had no choice but to stop.
本発明者らは、上記の金属薄膜型磁気記録媒体ニ蒸着、
ス・ぞツメ等によって炭素系表面保Fi層と設けた場合
の高湿下における磁性層と保護層との密着性について検
討を重ねた結果、両者の間に、AQ、V、Cr 、Mn
、Si +Nb 、Mo 、Ta 、W及びそ九らの
酸化物から選ばれる少くとも一種からなる中間層をスパ
ッタリング、イオンブレーティン/等の真空薄膜形成法
によって設けることにより、その密着性を著しく改良し
、従って磁気記録媒体の高湿下での走行耐久性と向上さ
せることができることを見出し、本発明を達成した。The present inventors have discovered that the above metal thin film type magnetic recording medium is deposited by vapor deposition,
As a result of repeated studies on the adhesion between the magnetic layer and the protective layer under high humidity when provided with a carbon-based surface Fi-retaining layer, it was found that AQ, V, Cr, Mn.
, Si + Nb , Mo , Ta , W and their oxides by forming an intermediate layer using a vacuum thin film forming method such as sputtering or ion brazing, which significantly improves the adhesion. However, it has been found that the running durability of a magnetic recording medium under high humidity can be improved, and the present invention has been achieved.
すなわち、本発明は非磁性支持体上1ccoを主成分と
する強磁性金属薄膜を有する磁気記録媒体において、該
薄膜上にAl、V、Cr、Mn、5inNb +Mo
、Ta 、W及びそれらの酸化物から選ばれる少くとも
一層を含む中間層、及びM o −S 。That is, the present invention provides a magnetic recording medium having a ferromagnetic metal thin film mainly composed of 1cco on a non-magnetic support.
, an intermediate layer comprising at least one layer selected from Ta, W, and oxides thereof, and Mo-S.
W−8、C、Si −O、Co−Cr −O、及びCo
−Ni−Cr−0から選ばれる保護層がそれぞれ真空薄
膜形成法によって設けられていることを特徴とする磁気
記録媒体である。W-8, C, Si-O, Co-Cr-O, and Co
The present invention is a magnetic recording medium characterized in that protective layers selected from -Ni-Cr-0 are each provided by a vacuum thin film formation method.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明の薄膜型磁化記録媒体は、非磁性支持体とその上
にそれぞれ真空薄膜形成法で設けられた磁性層、中間層
及び保護層からなっている。The thin-film magnetic recording medium of the present invention consists of a non-magnetic support and a magnetic layer, an intermediate layer and a protective layer each provided on the non-magnetic support by a vacuum thin film forming method.
磁性層は、Co−Cr等つCoを主成分とする強磁性金
属薄膜単層からなっていてもよいが、垂直磁化方式には
・ぞ−マロイ合金等からなる軟磁性膜を下層とし、垂直
磁化膜を上底とする重層描成とすることが〒きる、
本発明に使用されるフィルム状支持体として&気ポリエ
チレンテレフタレート(PET)、&リイミド、ポリア
ミド、?リフエニレンサルコアイト°、ポリエーテルサ
ルホン、ポリサルホン等の高分子材料に対して適用でき
るが、これらのうち、耐熱性に特にすぐれるポリイミド
が好ましい。また、下地層を有する支持体に対しても適
用されつる9また・アルミニウム、シリコン、ガラス等
も支持体として用いることができろ。The magnetic layer may be made of a single layer of a thin ferromagnetic metal film mainly composed of Co, such as Co-Cr, but in the perpendicular magnetization method, a soft magnetic film made of a malloy alloy or the like is used as the lower layer, and the perpendicular The film-like support used in the present invention, which can be formed into a multilayer structure with a magnetized film as the top layer, is polyethylene terephthalate (PET), limide, polyamide, ? It can be applied to polymeric materials such as rifhenylene sarcoite, polyether sulfone, and polysulfone, but among these, polyimide, which has particularly excellent heat resistance, is preferred. The present invention can also be applied to a support having an underlayer. Aluminum, silicon, glass, etc. can also be used as the support.
また、支持体はあらかじめ、真空中で保持したり、熱処
理したり、或いはグロー放電処理等の前処理を行ない、
支持体の表面及び内部からの不純物ガスの放出を減少さ
せることが望ましい。In addition, the support is previously held in a vacuum, heat treated, or subjected to pretreatment such as glow discharge treatment,
It is desirable to reduce the emission of impurity gases from the surface and interior of the support.
軟磁性膜の材料としては、N i −Fe 、Ni−F
e−Mo、N1−F@−Mo−Cu等いわゆるノ< −
−q 。Materials for the soft magnetic film include Ni-Fe and Ni-F.
e-Mo, N1-F@-Mo-Cu, etc.
−q.
イ合金や、Fe 、Fe−u−3i 、Fe−Ni−0
゜Fe −T i +Ni−Fe−Cn−Cr −Mn
、 Fe−8i−B 、F e −B−C、Fe −
AJ Co −V−F@、 C。alloy, Fe, Fe-u-3i, Fe-Ni-0
゜Fe −T i +Ni−Fe−Cn−Cr −Mn
, Fe-8i-B, Fe-B-C, Fe-
AJ Co -V-F@, C.
−Ta 、Co−Zr 、co−Nb−Zr 、Co−
Ti 。-Ta, Co-Zr, co-Nb-Zr, Co-
Ti.
Co −N、b−Ta 、Co−Ni−Zr 、Fs−
Ni −P。Co-N, b-Ta, Co-Ni-Zr, Fs-
Ni-P.
Fe−P、Fe−Co−Zr 等の合金が用いられる
。Alloys such as Fe-P and Fe-Co-Zr are used.
膜厚としては、フィルム状支持体からのオリゴマーの析
出や不純物ガス放出を抑止できることが必要であり、0
.03〜5ミクロン程度に選ばれる。The film thickness needs to be able to suppress the precipitation of oligomers and the release of impurity gas from the film support, and is 0.
.. The thickness is selected to be about 0.03 to 5 microns.
良好な垂直磁化記録男性特性を得るためには、01〜1
ミクロン程度が特に望ましい。In order to obtain good perpendicular magnetization recording male characteristics, 01 to 1
Particularly desirable is a diameter of about microns.
磁性層はCo−Cr、Co−Ni 、Co−Ni−Cr
。The magnetic layer is Co-Cr, Co-Ni, Co-Ni-Cr
.
Co−Fe−Cr 、(’o −c r−Ta +Co
−Cr −W+Co −Cr−Ma 、 Co −Cr
−V等のCoを主成分とす一層以上の強凪性薄膜よりな
っている。Co-Fe-Cr, ('o-cr-Ta +Co
-Cr -W+Co -Cr-Ma, Co -Cr
- It consists of one or more layers of strong-temperature thin film mainly composed of Co such as -V.
膜厚としては、0.03〜5ミクロン程度に選ばれるが
、005〜1ミクロン程度が特忙望ましい。The film thickness is selected to be about 0.03 to 5 microns, but preferably about 0.05 to 1 micron.
膜形成手段としては、蒸着、スパッタリング等が用いら
れるが複数個の円筒状キャンの周囲に配置された複数個
の高速スパッタ源を有するいわゆる連続スパッタリング
法又はいわゆるインラインスノにツタリング法が望まし
い。As the film forming means, vapor deposition, sputtering, etc. are used, but it is preferable to use a so-called continuous sputtering method having a plurality of high-speed sputtering sources arranged around a plurality of cylindrical cans or a so-called in-line sputtering method.
ス・ξツタ源としては、各種の高速ス・ぞツタ源が使用
できる。Various high speed ivy sources can be used as the ivy source.
本発明は上記の如く形成された磁性層にA! 、 V。The present invention provides A! in the magnetic layer formed as described above. , V.
Cr 、Mn +S l +Nb +Mo 、Ta +
W及びそれらの酸化物から選ばれる少くとも一種を含む
中間層を設ける。中間層は上記の如きス・ξツタリング
で設けてもよく、また蒸着、イオンプレーライング等で
設けてもよい。中間層の厚さはlOえ〜100X程度で
ある。Cr, Mn + S l + Nb + Mo, Ta +
An intermediate layer containing at least one selected from W and oxides thereof is provided. The intermediate layer may be provided by the above-mentioned slanting method, or may be provided by vapor deposition, ion spraying, or the like. The thickness of the intermediate layer is about 10 to 100X.
中間層を上記金属またはその酸化物で構成する場合には
、例えば前記の如きス・にツタリング装置中でス・ぐツ
タ源として同種の金属を用いればよく、また上記酸化物
で構成する場合には、上記金属膜と形成後、酸素雰囲気
中でグロー放電を印加してもよく、また酸素中でス・ξ
ツタ、蒸着、またはイオンブレーティングを行ってもよ
い7
中間層の形成及び後記する保護層の形成は前記の母性層
の形成と同一装置内で連続的に行ってもよく、またそれ
ぞれ別々な装置によって行ってもよい。When the intermediate layer is composed of the above-mentioned metal or its oxide, the same kind of metal may be used as a spore source in the above-mentioned sintering device, and when it is composed of the above-mentioned oxide, After formation with the above metal film, glow discharge may be applied in an oxygen atmosphere, or
The formation of the intermediate layer and the formation of the protective layer to be described later may be performed continuously in the same apparatus as the formation of the mother layer, or may be performed in separate apparatuses. You can also do this by
本発明の保護層はMo−8、W−8、C、S i −0
またはCo−Cr−0を主成分とする。これらのうちC
を主成分とすることが特に好ましい。The protective layer of the present invention is Mo-8, W-8, C, Si-0
Or the main component is Co-Cr-0. Of these, C
It is particularly preferable to have as a main component.
本発明の保護層は上記中間層上に上記物質を蒸発源又は
スパッタ源として蒸着又げス・ゼッタリングの如き真空
薄膜形成法によって形成する。保護層の厚さは50〜5
00X程度が好ましい。The protective layer of the present invention is formed on the intermediate layer by a vacuum thin film forming method such as vapor deposition or zettering using the above substance as an evaporation source or a sputtering source. The thickness of the protective layer is 50-5
Approximately 00X is preferable.
これらの中間層や保護層における例えばス・ξツメリン
グ装置や条件は前記した母性層を設ける場合に準じて選
択すればよい。For example, the sizing device and conditions for these intermediate layers and protective layers may be selected in accordance with the case where the above-mentioned mother layer is provided.
なお、本発明においては、上記の如き磁性層、中間層及
び保護管を支持体の片面にのみ設けてもまた両面に設け
てもよい。In the present invention, the magnetic layer, intermediate layer and protective tube as described above may be provided on only one side of the support, or may be provided on both sides.
次に、本発明の百面硼性居型の磁気記録媒体を製造する
場合の一態様を添付図面について説明する。Next, one aspect of manufacturing the perpendicular boron type magnetic recording medium of the present invention will be described with reference to the accompanying drawings.
第1図は両面連続スパシター装置の一例を示す略図であ
る、例えばロール状のポリイミドフィルムな送出IIv
11にセットし、スパッタ室2に設置された中間ローラ
及び円筒状キャン3,4を経て巻取@5に巻取られろ。FIG. 1 is a schematic diagram showing an example of a double-sided continuous sputtering device, for example, a roll-shaped polyimide film delivery IIv
11, and is wound up by the winder @5 via an intermediate roller and cylindrical cans 3 and 4 installed in the sputtering chamber 2.
真空槽は送出室6、ス・ぐツタ室2、及ぶ巻取室7の3
つに大別し、各室は隔壁で仕切られ、各基(ではそれぞ
れ排気系8,9゜10及び11で排気する。The vacuum chamber includes the delivery chamber 6, suction chamber 2, and winding chamber 7-3.
Each chamber is divided by a partition wall, and each chamber is evacuated by exhaust systems 8, 9, 10, and 11, respectively.
スパッタ室2にはたとえばCo−Crよりなるターゲッ
ト12、たとえばCrよりなるターゲット13及びたと
えばCよりなるターゲット14を円筒状キャンS、に而
して設置しまたCo−Crターゲット15、Crターゲ
ット16、及びCターゲット17を円筒状キャン4に面
して放置する。In the sputtering chamber 2, a target 12 made of Co--Cr, a target 13 made of Cr, and a target 14 made of C, for example, are installed in a cylindrical can S, and a Co--Cr target 15, a Cr target 16, And the C target 17 is left facing the cylindrical can 4.
スパッタ室をI X 10−” torr以下の圧力に
排気した後ガス導入糸16からArガスを導入し、約3
X 10” torr に維持した0この状態で、
走行するポリイミドフィルムの片面上にターゲット12
をスパッターカソードとしてスパッタリングを行い、ま
ずCo−Cr膜を形成し、次いでターゲット13及びタ
ーゲット14をスパッターカソードとしてCr膜次いで
C膜を形成する。さらに、支持体と反対面に前記と同様
の順にターゲット15116、及び17を用いてC。After the sputtering chamber was evacuated to a pressure of I x 10-'' torr or less, Ar gas was introduced from the gas introduction thread 16 and
X maintained at 10” torr In this state,
Target 12 is placed on one side of the running polyimide film.
Sputtering is performed using the target as a sputter cathode to first form a Co--Cr film, and then a Cr film and then a C film are formed using the targets 13 and 14 as sputter cathodes. Furthermore, targets 15116 and 17 were used in the same order as above on the opposite side of the support.
−Cr膜Cr膜及びC膜をスパッタリングによって設け
た後に、巻取軸5に巻取る。-Cr film After providing the Cr film and the C film by sputtering, the film is wound onto the winding shaft 5.
なお、中間層としてたとえばCr−0を用いる場合には
、母性層上にCrよりなる薄層と設けた後、酸素雰囲気
(0210−1〜1O−3torr )中でグロー放電
を与える。When using Cr-0 as the intermediate layer, for example, a thin layer of Cr is provided on the mother layer and then glow discharge is applied in an oxygen atmosphere (0210-1 to 10-3 torr).
上記の本発明の磁気記録媒体を製造する場合の1例を示
したに過ぎず、種々の変更が可能である。This is merely an example of manufacturing the magnetic recording medium of the present invention, and various modifications are possible.
第1図に示す如き装置を用い下記の構成の3種の磁気記
録媒体をそれぞf″L4本づつ作成した。Using the apparatus shown in FIG. 1, three kinds of magnetic recording media having the following configurations were prepared, each having four pieces f''L.
なお、Cr−Qの中間層は10−2Torrの酸素雰囲
気中でCrのスパッタリングを行って形成した。Note that the Cr-Q intermediate layer was formed by sputtering Cr in an oxygen atmosphere of 10<-2 >Torr.
このようにして作成した各垂直磁化媒体を3.5インチ
のディスクにカットし市販のジャケットに組込みフロッ
ピーディスクとした。Each of the perpendicular magnetization media thus produced was cut into a 3.5-inch disk and assembled into a commercially available jacket to make a floppy disk.
上記フロッピーディスクを50℃、80%RHの雰囲気
下に1週間保存後25°C150cl)RH”C’市販
のFDドライブにより記録し、その後600r、p、m
、で回転させ再生信号をモニターしながら回転走行を絖
け、走行不能となるまでのパス数を測定した。(最大1
000万・ぞスでテストを中止した)。After storing the above floppy disk in an atmosphere of 50°C and 80% RH for one week, recording was performed at 25°C with a commercially available FD drive, and then 600r, p, m
, and while monitoring the playback signal, the robot was rotated, and the number of passes until it became unable to run was measured. (maximum 1
The test was canceled at 0,000,000 zos).
得られた結果を第2図に示した。The results obtained are shown in Figure 2.
第2図の結果から明かなように、中間層を設けずに保護
層を設けた比較サンプル(サンプルC)は1万パスから
1000万パスまで走行耐久性にばらつきがあり、再現
性が悪かった。As is clear from the results in Figure 2, the comparative sample (Sample C) with a protective layer without an intermediate layer had varying running durability from 10,000 passes to 10,000,000 passes, and had poor reproducibility. .
これに対し、本発明による場合は何れも走行・セスが1
000万パスに近く著しく耐久性のすぐれた磁気記録媒
体(サンプルA及びB)を再現性よく製造できることが
わかる・On the other hand, in the case of the present invention, the travel/cess is 1
It can be seen that it is possible to manufacture magnetic recording media (samples A and B) with excellent durability (samples A and B) with good reproducibility, with a durability of close to 0 million passes.
第1図は本発明の磁気記録媒体を製造する装置の一例を
示す概略図、第2図は実施例における走行パステストの
結果を示す図である。
2・・・スパッタX、3.4・・・キャン、12,13
゜14・・・片面スパッタリング用ターゲット、15゜
16.17・・・反対面ス・ξツタリング用ターゲット
代理人 弁理士(st07)佐々木清隆、(ほか2名)
第 1 図
第 2 図FIG. 1 is a schematic diagram showing an example of an apparatus for manufacturing the magnetic recording medium of the present invention, and FIG. 2 is a diagram showing the results of a running path test in the example. 2... Spatter X, 3.4... Can, 12, 13
゜14...Target for sputtering on one side, 15゜16.17...Target for sputtering on the other side Patent attorney (st07) Kiyotaka Sasaki, (and 2 others) Fig. 1 Fig. 2
Claims (1)
膜を有する磁気記録媒体において、該薄膜上に、Al、
V、Cr、Mn、Si、Nb、Mo、Ta、W及びそれ
らの酸化物から選ばれた少くとも一種を含む中間層、及
びMo−S、W−S、C、Si−O、Co−Cr−O、
及びCo−Ni−Cr−Oから選ばれる保護層がそれぞ
れ真空薄膜形成法によって設けられていることを特徴と
する磁気記録媒体。1) In a magnetic recording medium having a ferromagnetic metal thin film mainly composed of Co on a nonmagnetic support, Al,
An intermediate layer containing at least one selected from V, Cr, Mn, Si, Nb, Mo, Ta, W and oxides thereof, and Mo-S, W-S, C, Si-O, Co-Cr -O,
A magnetic recording medium, wherein a protective layer selected from Co-Ni-Cr-O and Co-Ni-Cr-O is provided by a vacuum thin film forming method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14030186A JPS62298917A (en) | 1986-06-18 | 1986-06-18 | Magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14030186A JPS62298917A (en) | 1986-06-18 | 1986-06-18 | Magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62298917A true JPS62298917A (en) | 1987-12-26 |
Family
ID=15265601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14030186A Pending JPS62298917A (en) | 1986-06-18 | 1986-06-18 | Magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62298917A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01124116A (en) * | 1987-11-09 | 1989-05-17 | Nec Corp | Magnetic memory medium and its production |
-
1986
- 1986-06-18 JP JP14030186A patent/JPS62298917A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01124116A (en) * | 1987-11-09 | 1989-05-17 | Nec Corp | Magnetic memory medium and its production |
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