JPS62294166A - Vapor deposition device for thin film - Google Patents

Abstract

PURPOSE:To enable many and diversified kinds of vapor depositions such as diagonal vapor deposition and large area vapor deposition by constituting a fixing base of an ion source consisting of a vapor generator for vapor deposition, vapor ionizing means and cluster accelerating means for metallic vapor for vapor deposition of a vapor deposition for thin films in such a manner that said fixing base can be moved. CONSTITUTION:Thermoelectrons 13 which are generated from a filament 9 by energizing a bombardment filament 6 to heat a metal 5 such as Cu or Al in a graphite crucible 4 to 2,000-2,300 deg.C to melt and evaporate the same are brought into collision against the surface of a substrate 18 in a vacuum vessel 1 and are ionized. The ionized clusters 16 of the metallic vapor of Cu, Al, etc., are accelerated by an acceleration electrode 14 to a high velocity and are brought into collision against the substrate 18 so that the metal such as Cu is deposited by evaporation on the substrate. An inclined shaft 20a is provided to the side face of the fixing base 20 of the above-mentioned vapor generator 25 and the fixing base 20 is pivotally provided to an auxiliary plate 26. Said fixing base is tiltably constructed by a balance member having an inclination adjusting acrew 32 elastically provided to the bottom end of the fixing base and the bottom end of the auxiliary plate. A circular shaft 33 is inserted to a supporting base 27 fixed to the auxiliary plate and is bridged like a rail near the bottom in the vacuum vessel 1, by which the fixing base is movably constructed.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a film deposition apparatus (used for forming semiconductor thin films and optical thin films in vacuum), and particularly relates to an ion source fixing device. This relates to improvements to the stand.

[Conventional technology]

FIG. 8 is a schematic configuration diagram schematically showing a conventional thin film deposition apparatus disclosed in, for example, Japanese Patent Publication No. 54-9592. In the figure, 1 is a vacuum chamber maintained at a predetermined degree of vacuum;
Reference numeral 2 denotes an exhaust passage for evacuating the inside of the vacuum chamber 1, and is connected to a vacuum exhaust device (not shown). 4 is a closed crucible provided with a nozzle 4a having a diameter of 1 to 2 NN, and is made of carbon or the like.

This crucible 4 contains a deposition material 5 to be deposited on the substrate,
For example, granular metals such as ff1 (cu) and aluminum (A1) are accommodated. 6 is a bombardment filament that irradiates the crucible 4 with thermoelectrons to heat it;
7 is a heat shield plate made of molybdenum (Mo), tantalum (T a ), etc., which blocks radiant heat from the filament 6; The bombardment filament 6 and the heat shield plate 7 form a steam generation source 8 that spouts the steam to be deposited onto the substrate into the vacuum chamber 1 to generate clusters. Note that 19 is an insulating support member that supports the heat shield plate 7, and 20 is a fixing table that fixes the ion source. Reference numeral 9 denotes an ionizing filament that is heated to 2000"C or more and emits thermionic electrons 13 for ionization; 10 an electron extracting electrode that accelerates thermionic electrons 13 emitted from the ionizing filament 9; 11 an ionizing filament; C filament 9; The ionization means 12 for ionizing the clusters from the steam generation source 8 is formed by the above-mentioned ionized filament 9, the electron extraction electrode 10, and the heat shield 11. 23 is an insulating support member that supports the temporary heat shield 11. 14 is an acceleration electrode that accelerates the ionized cluster 16 and causes it to collide with the substrate 18 to deposit a thin film. , a voltage of up to 10 KV can be applied between the electrode 10 and the electron extraction electrode 10. Reference numeral 24 is an insulating support member that supports the acceleration electrode 14, 22 is a substrate holder that supports the substrate 18, and 21 is a support for the substrate holder 22. The insulating support member 17 is a cluster beam consisting of cluster ions 16 and neutral clusters 15.

Next, the operation will be explained.

First, the crucible 4 is filled with the metal 5 to be vapor deposited, and the air in the vacuum chamber 1 is evacuated using a vacuum evacuation device (not shown) to bring the vacuum chamber 1 to a degree of vacuum of about 10-htorr.

Next, the bombardment filament 6 is energized to 200
The metal 5 in the crucible 4 is heated by generating heat from 0° C. to 2200° C. by radiant heat from the bombardment filament 6 or by electron bombardment, that is, by colliding thermoelectrons emitted from the filament 6 with the crucible 4. Let it evaporate. And the metal vapor pressure inside the crucible 4 is 0.1
When the temperature is raised to about 10 torr, nozzle 4
The metal vapor ejected from a is adiabatically expanded due to the pressure difference between the crucible 4 and the vacuum chamber 1, and becomes a lumpy atomic group called a cluster, in which a large number of atoms are loosely bonded. This cluster-shaped cluster beam 17 collides with electrons 13 extracted from the ionization filament 9 by the electron extraction electrode 10, and therefore some of the clusters of the cluster beam 17 have - atoms ionized. This becomes cluster ion 16. The cluster ions 16 are accelerated appropriately by the electric field formed between the accelerating electrode 14 and the electron extraction electrode 10 and collide with the substrate 18, whereby a thin film is deposited on the cough substrate 18.

At this time, the unionized neutral clusters 15 collide with the substrate 18 with the kinetic energy ejected from the crucible 4, and are deposited on the substrate 18 together with the cluster ions 16.

The above operations are performed with the ion source 25 fixed on the fixed table 20.

[Problem that the invention seeks to solve]

Conventional thin film deposition equipment is configured as shown below, so one thin film deposition equipment can be used to form thin films for all purposes such as large area deposition, diagonal thin deposition, and compound DJ7Jl film deposition. When performing this, operations such as moving and tilting the ion source are required, but since it is in a vacuum and at a high temperature, there are problems such as the generation of impurities and thermal strain at high temperatures, and the moving and tilting mechanism is could not be adopted.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a thin film deposition apparatus in which an ion source can be moved and tilted in a vacuum and at high temperatures.

[Means for solving problems]

The thin film deposition apparatus according to the present invention includes a balance having an inclined axis provided on the side surface of the fixed table, the fixed table pivoted to the auxiliary plate, and tilt adjustment screws elastically installed at the lower end of the fixed table and the lower end of the auxiliary plate. It is made tiltable by a member, and a circular shaft is inserted into a support base fixed to an auxiliary plate, and this circular shaft is installed as a rail-shaped bridge near the bottom of the vacuum chamber, making the fixed base movable. be.

[Effect]

In the thin film deposition apparatus of the present invention, the fixed table is provided with a tilting bearing and a tilting shaft for making it tiltable, and the moving bearing and circular shaft for making the fixed table movable are installed in a vacuum chamber. Since it is provided at the bottom, there are no problems such as generation of impurities or thermal distortion even in vacuum and high temperature conditions, and a tilting and moving mechanism can be realized. Therefore, the position and angle relationship between the ion source and the substrate holder can be easily adjusted, regardless of the size of the substrate to be deposited or the characteristics of the deposited thin film.
Cluster ion beam deposition can be performed stably.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic configuration diagram schematically showing a thin film deposition apparatus according to an embodiment of the present invention, and in the figure, the same reference numerals as in FIG. 8 indicate the same or corresponding parts.

20a is an inclined shaft made of a material with a small coefficient of thermal expansion fixed to the fixed base 20, 20b is an oil-free bearing,
This is mounted pivotably on an auxiliary plate 26 having a groove, and is further fixed with a fixing fitting 26a (see FIG. 3). 27
is a support base having an oil-free bearing 27a that supports the auxiliary plate 26. 28 is a support member that supports the balance member, and this includes a square washer 29, 30 and a spring 3.
1 is attached (the 4th one).
(see figure). 32 is an inclination adjustment screw for adjusting the inclination angle of the fixed base 20, and 33 is an oil-free bearing 27a of the support base 27.
It is a circular shaft made of a material with a small coefficient of thermal expansion that is inserted into the vacuum chamber and installed as a rail-shaped bridge near the bottom of the vacuum chamber (No. 6).
(see figure), and is fixed to the footrest 34.

Next, the operation will be explained.

As an example, we will consider a case where a multi-N film is formed by diagonal vapor deposition using one ion source 25 and changing the incident angle of vapor deposition particles onto the substrate 18 . As shown in FIG. 2, the ion source 25 is moved on a circular shaft 33 bridged in the form of a rail via an oil-free bearing 27a, and is installed with the central axis of the substrate 18 removed. As shown, the ion source 25 is installed on the auxiliary plate 26 using the tilt adjustment screw 3 so that the center of the substrate 18 is on the extension of the central axis of the ion source 25.
2 to tilt it. After adjusting the positional and angular relationships of the substrate 18 with respect to the ion source 25, vapor deposition is performed in a high vacuum and at high temperatures as in the conventional example, and the substrate 18 remains fixed horizontally. A beam having a certain incident angle in a diagonal direction with respect to the substrate 8 contributes to the formation of a thin film, and oblique vapor deposition is performed. Next, the position and inclination angle of the ion source 25 are adjusted again as described above, and oblique evaporation is performed at a different incident angle in a high vacuum and under high temperature conditions as in the above case.

In this way, in this example, it is possible to perform oblique evaporation and large area deposition with one thin film deposition apparatus, without causing impurities in a vacuum, and without causing thermal strain in the moving mechanism under high temperature conditions. Various types of vapor deposition such as vapor deposition and compound thin film formation can be performed, and the center of the ion source and the substrate can be positioned with high precision and in a short time.

In the above embodiment, an oil-free bearing was provided on the support base 27 of the auxiliary plate 26, and a circular shaft was inserted into this so that the ion source was moved.
As shown in the figure, a wheel-shaped bearing may be provided on the support base 27 and mounted on the square shaft 33-, so that the Lee ion source can be moved while rolling.

Further, in the above embodiment, the case where one ion source is installed has been described, but the present invention can also be applied to cases where multiple ion sources are installed to perform large area deposition, compound thin film deposition, etc. , it can also be applied to regular vacuum deposition and ion blating.

〔Effect of the invention〕

As described above, according to the thin film deposition apparatus according to the present invention, the ion source is slidably mounted on the shaft bridged in the shape of a rail, and the ion source is tilted together with the fixed stand, so that it can be used in vacuum and at high temperatures. The ion source can be moved and tilted under certain conditions, allowing the deposition of a wide variety of thin films.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram showing a thin film deposition apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view showing the movement of the above embodiment, and FIG. 3 is a tilting axis of the fixed table of the above embodiment, A partial cross-sectional view showing the mounting with the auxiliary plate, Figure 4 is a cross-sectional view showing the state of the tilt adjustment screw and balance member when the fixed base is tilted, and Figure 5 is a cross-sectional view showing the state of the tilt adjustment screw and balance member when the fixed base is tilted. 6 is a cross-sectional view centered on the tilt axis, FIG. 7 is a cross-sectional view showing another embodiment of the present invention, and FIG. 8 is a schematic configuration diagram showing a conventional thin film deposition apparatus. DESCRIPTION OF SYMBOLS 1... Vacuum layer, 2... Exhaust passage, 3... Vacuum valve, 4... Crucible, 5... Vapor deposition substance, 6... Filament for bombardment, 7... Heat shield, 8 ...
Steam generation source, 9... Ionization filament, 10...
・Electron extraction electrode, 11...temporary heat shield, 12・
... Ionization means, 18 ... Substrate, 20 ... Fixing base, 20a ... Inclined shaft, 20b ... Bearing, 25 ...
Ion source, 26... Auxiliary plate, 27... Support stand, 27
a...Oil-free bearing, 28...Supporting member, 31
...Spring, 32...Inclination adjustment screw, 33...
・Circular shaft, 34... Square shaft, 35...
Bearing (cam follower). Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (5)

[Claims] (1) A steam generation source that spews the vapor of a substance to be deposited onto a substrate provided in a vacuum chamber at a predetermined degree of vacuum into the vacuum chamber, and generates clusters in which many atoms are loosely bonded in the vapor. a filament that emits thermoelectrons for ionizing the cluster; an electron extraction electrode that emits the thermoelectrons toward the cluster ejected from the steam generation source; A fixing table movable mechanism for tilting or moving a fixing table for fixing the ion source in a thin film deposition apparatus equipped with an ion source comprising an accelerating electrode that deposits a thin film by colliding with a substrate together with unionized neutral clusters. A thin film deposition apparatus characterized by being provided with. (2) The fixed table movable mechanism is characterized in that a tilting means is provided, which includes a rotatable means for making the fixed table rotatable, and an inclination adjustment means for rotating the fixed table. A thin film deposition apparatus according to claim 1. (3) The thin film deposition apparatus according to claim 2, characterized in that, as the inclination adjustment means, a balance member having a spring and an adjustment screw is fixed to the lower end of the fixed table and the lower end of the auxiliary plate. (4) The thin film deposition apparatus according to claim 2, wherein the rotatable means has an inclined shaft provided on a side surface of the fixing table and pivoting the fixing table to the auxiliary plate. (5) A circular shaft is disposed near the bottom of the vacuum chamber, and an ion source is installed on this shaft via a bearing. Thin film deposition equipment.