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JPS62293745A - heat transfer element - Google Patents

heat transfer element

Info

Publication number
JPS62293745A
JPS62293745A JP61138713A JP13871386A JPS62293745A JP S62293745 A JPS62293745 A JP S62293745A JP 61138713 A JP61138713 A JP 61138713A JP 13871386 A JP13871386 A JP 13871386A JP S62293745 A JPS62293745 A JP S62293745A
Authority
JP
Japan
Prior art keywords
heat transfer
transfer element
lsi chip
slits
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61138713A
Other languages
Japanese (ja)
Inventor
Kenichi Kikuchi
賢一 菊地
Koji Noguchi
野口 弘二
Aritaka Tatsumi
辰巳 有孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP61138713A priority Critical patent/JPS62293745A/en
Publication of JPS62293745A publication Critical patent/JPS62293745A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To absorb the dispersion of the height and parallelism of an LSI chip by spirally winding a band made of a thin metal having a large number of slits vertically or obliquely in the longitudinal direction and forming a cylinder. CONSTITUTION:The upper end of a heat transfer element 2 acquired by spirally winding a metallic band 1 made of thin copper, to which slits are shaped vertically in the longitudinal direction, and forming a cylinder is fixed to a cooling plate 6 by solder while an LSI chip 3 is fastened to a base 5 by a solder ball 4. The lower end of the heat transfer element 2 is pushed lightly against and brought into contact with the LSI chip 3 directly or through a heat transfer compound, etc. Consequently, heat generated in the LSI chip 3 is transmitted over the cooling plate 6 through the heat transfer element 2, thus cooling the LSI chip 3. On the other band, a heat transfer element 2 is deformed easily to a barrel shape by the effect of the slits 11 without damaging heat transfer capacity to an LSI chip 3' having large height from the base 5, and the difference of the height of the LSI chip 3' is absorbed.

Description

【発明の詳細な説明】 3、発明の詳細な説明 [産業上の利用分野] 本発明は伝熱素子、特にICやLSIチップの冷却に用
いられる伝熱素子に関するものである。
Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a heat transfer element, particularly a heat transfer element used for cooling an IC or an LSI chip.

[従来の技術] 電子計nIaの高速、大容量化に伴い、ICやLSIパ
ッケージの発熱密度も増大しており、ICやLSIチッ
プの冷却技術tよますま1−重要になってきている。冷
却方式としては各デツプに小さなヒートシンクを取り付
けて空気で冷やす強制空冷方式、チップを直接フロン等
の電気絶縁f1の液体に浸)へして冷却する液冷方式、
あるいはチップと冷却板との間に伝熱素子を介して冷却
する熱伝導方式などがある。これらの冷却方式にはそれ
ぞれ一長一短があり、対象とする電子KI C’、t 
nの古川や各メーカーの方針などにJ:り使い分けてい
るのが現状である。
[Prior Art] With the increase in speed and capacity of electronic meters, the heat generation density of IC and LSI packages is also increasing, and cooling technology for IC and LSI chips is becoming increasingly important. The cooling methods include a forced air cooling method in which a small heat sink is attached to each depth and cooled with air, a liquid cooling method in which the chip is directly immersed in an electrically insulating liquid such as Freon (f1), and cooled.
Alternatively, there is a heat conduction method in which the chip is cooled via a heat transfer element between the chip and the cooling plate. Each of these cooling methods has its advantages and disadvantages, and the target electronic KI C', t
Currently, J: is used depending on Furukawa's policy and each manufacturer's policy.

上記熱伝導方式の一例としてL;t 113 M社の機
種No、 3081に採用されている第6図に示づピス
トン方式が従来からよく知られている。この方式ではL
SIチップ3に発生した熱を該チップ3に接しているビ
ス1〜ン9(スプリング10を介して冷IJ板6に挿設
されている)の球面部に伝え、ピストン9の側面から数
μmの間隙を通して水冷の冷却板6に伝えている。なj
3、前記間隙にtよ熱伝導を良好にするためヘリウムガ
スが充填されている。
As an example of the above-mentioned heat conduction method, the piston method shown in FIG. 6, which is employed in the model No. 3081 of Company L;t113M, has been well known. In this method, L
The heat generated in the SI chip 3 is transferred to the spherical parts of the screws 1 to 9 (inserted into the cold IJ plate 6 via the spring 10) that are in contact with the chip 3, and the heat is transferred several μm from the side of the piston 9. It is transmitted to the water-cooled cooling plate 6 through the gap. Naj
3. The gap is filled with helium gas to improve heat conduction.

この熱伝導方式の最大の課題(,1パツケージ3Aγ)
」二に多数配置されているLSIチップの高さや平行度
のバラツキ、及び熱膨張をどのように吸収するかにある
。かかる課題に対して、前記ピストン方式は図示したよ
うに微小な間隙を設けること、スプリングを利用するこ
と、及びピストン先端を球面にすることにより解決して
おり、現状では最もすぐれた方式の一つとされている。
The biggest problem with this heat conduction method (, 1 package 3Aγ)
The second problem is how to absorb variations in the height and parallelism of the large number of LSI chips arranged, as well as thermal expansion. The above-mentioned piston method solves this problem by providing a small gap as shown in the figure, using a spring, and making the piston tip spherical, and is currently one of the best methods. has been done.

[発明が解決しようとする問題点] しかしながら、この方式には次のような欠点がある。す
なわら、IsIデツプ3とピストン9との接触が平面と
球面によるものであるため両者の接触面積が小さいこと
、及びピストン9と冷却板6との間にヘリウムガスを介
在させていることにより、熱抵抗を現状よりも大幅に減
少させることができない。したがって、L S、 Iの
集積度が−m高くなり発熱量が増加した場合にはこの方
式では十分に冷部することができない。
[Problems to be Solved by the Invention] However, this method has the following drawbacks. In other words, since the contact between the IsI depth 3 and the piston 9 is through a flat and spherical surface, the contact area between the two is small, and because helium gas is interposed between the piston 9 and the cooling plate 6, , it is not possible to significantly reduce thermal resistance from the current level. Therefore, when the degree of integration of L S, I increases by -m and the amount of heat generated increases, this method cannot sufficiently cool the part.

本発明は上記の事情に鑑みてなされたものであって、そ
の目的とするところは前記した従来技術の欠点を解潤し
、熱抵抗を大幅に減少させることがでさる新規な伝熱素
子を提供することにある。
The present invention has been made in view of the above circumstances, and its purpose is to solve the drawbacks of the prior art described above and provide a novel heat transfer element that can significantly reduce thermal resistance. It's about doing.

[問題点を解決するだめの手段] 本発明の要旨は、長さ方向に対して垂直ないしは斜めに
多数のスリットを有する薄い金属製の帯を渦巻き状に巻
回して円筒を形成したことを特徴とする伝熱素子にある
。ここで、上記金属製の帯と帯の問の非スリット部分に
スペーサ゛を挿入づろことが好ましく、また上記金属製
の帯の端面に熱伝導の良好な金属板を伝熱的に一体にな
るように取り付けてもよい。なお、円筒を形成している
渦巻き状の金属帯は連続した1木である必要はなく、複
数本で複数列の渦を形成しでいてもよい。
[Means for solving the problem] The gist of the present invention is that a cylinder is formed by spirally winding a thin metal band having a large number of slits perpendicularly or diagonally to the length direction. The heat transfer element is Here, it is preferable to insert a spacer into the non-slit part between the metal bands, and also to integrate a metal plate with good heat conduction on the end face of the metal band. It may be installed as shown. Note that the spiral metal band forming the cylinder does not need to be one continuous piece, and may be made of a plurality of pieces to form a plurality of rows of vortices.

[作  用コ 薄い金属帯に設けたスリットにより円筒形の伝熱素子に
弾力性をもたせたので、わずがな荷重で樽状にたわみ変
形し、これによりLSIチップの高さや平行度のバラツ
キを吸収することができる。
[How it works: The slits in the thin metal strip give the cylindrical heat transfer element elasticity, so it bends and deforms into a barrel shape under even the slightest load, thereby reducing variations in the height and parallelism of the LSI chip. can be absorbed.

[実施例〕 以下に本発明の実施例を図面と共に説明づる。[Example〕 Embodiments of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例を示し、長さ方向に対して垂
直にスリットを形成した薄い銅製の金属帯1を渦巻き状
に巻回して円筒を形成し伝熱素子2としたものである。
FIG. 1 shows an embodiment of the present invention, in which a thin copper metal strip 1 with slits formed perpendicular to its length is spirally wound to form a cylinder to form a heat transfer element 2. be.

むお、図示してはいないが、渦巻きの外側端末はほどけ
ないようにハンダ等により固定されている。第2図は伝
熱素子2を使用している状態を示し、伝熱素子2の上端
は冷却板6にハンダで固定されている。一方、LSIチ
ップ3はハンダボール4で基盤(セラミック等から成る
)5に固定されている。そして伝熱素子2の下端は直接
ないしは伝熱コンパウンド等を介してLSIチップ3に
軽く押し付けられて接触している。こうして1.SIチ
ップ3に発生した熱は伝熱素子2を経て冷却板6に伝え
られ、それによってLSIデツプ3の冷却が行われる(
第2図(a)参照)。一方、基盤5からの高さが大きい
LSIチップ3′に対しては、伝熱素子2は伝熱能力を
損なうことなくスリット11の効果により容易に樽状に
変形し、LSIチップ3′の高さの差を吸収することが
できる(第2図(b)参照)。
Although not shown, the outer end of the spiral is fixed with solder or the like to prevent it from unraveling. FIG. 2 shows the state in which the heat transfer element 2 is used, and the upper end of the heat transfer element 2 is fixed to the cooling plate 6 with solder. On the other hand, the LSI chip 3 is fixed to a substrate 5 (made of ceramic or the like) with solder balls 4. The lower end of the heat transfer element 2 is lightly pressed into contact with the LSI chip 3 either directly or via a heat transfer compound or the like. Thus 1. The heat generated in the SI chip 3 is transferred to the cooling plate 6 via the heat transfer element 2, thereby cooling the LSI deep 3 (
(See Figure 2(a)). On the other hand, for an LSI chip 3' having a large height from the substrate 5, the heat transfer element 2 is easily deformed into a barrel shape due to the effect of the slit 11 without impairing the heat transfer ability, and the height of the LSI chip 3' is increased. The difference in height can be absorbed (see FIG. 2(b)).

次に第3図及び第4図は本発明の別の実施例を示し、渦
巻状の金属帯1の各層の問の上端及び下端にスペーサを
巻き付けたものである。これにより伝熱素子2が樽状に
変形する際に金属帯1の各層問の干渉が少なくなり、変
形がさらに一層容易になる。なおスペーサ7の素材とし
ては、半径方向の熱伝導を良好にするため銅やアルミ等
の金属を使用することが望ましい。
Next, FIGS. 3 and 4 show another embodiment of the present invention, in which spacers are wound around the upper and lower ends of each layer of the spiral metal strip 1. As a result, when the heat transfer element 2 is deformed into a barrel shape, there is less interference between the layers of the metal band 1, and the deformation becomes even easier. Note that as the material for the spacer 7, it is desirable to use a metal such as copper or aluminum in order to improve heat conduction in the radial direction.

第5図は本発明のさらに別の実施例を示し、円筒状の伝
熱素子2の両端に金属製で円形の伝熱機8をハンダ付は
等により取り付けたものである。
FIG. 5 shows yet another embodiment of the present invention, in which circular metal heat transfer devices 8 are attached to both ends of a cylindrical heat transfer element 2 by soldering or the like.

これによりLSIデツプ3の上面の面積が伝熱素子2の
端面の面積に比べて小さい場合に半径方向に熱を分散さ
せ、伝熱素子2の全体を有効に利用することができる。
Thereby, when the area of the upper surface of the LSI deep 3 is smaller than the area of the end surface of the heat transfer element 2, heat can be dispersed in the radial direction, and the entire heat transfer element 2 can be effectively utilized.

[発明の効果] 以上述べたように本発明による伝熱素子は薄い金属帯に
設けたスリットによりわずかな荷f旦で樽状にたわみ変
形し、これによりLSIチップの高さや平行度のバラツ
キを吸収することができる。
[Effects of the Invention] As described above, the heat transfer element according to the present invention bends and deforms into a barrel shape with a slight load due to the slits provided in the thin metal strip, thereby reducing variations in the height and parallelism of LSI chips. Can be absorbed.

また、伝熱素子とLSIブップとの接触面積が人きく、
しかも熱伝導の良好な金属同士の熱伝導であるため、熱
抵抗を極めて小さくすることができる。
In addition, the contact area between the heat transfer element and the LSI bump is large,
Moreover, since the heat conduction is between metals with good heat conductivity, the thermal resistance can be extremely small.

このように本発明による伝熱素子は小荷重でのばね性と
小さい熱抵抗とを高次元で両立させたものであり、IC
やり、SIチップの冷却用として非常に優れたものであ
る。
In this way, the heat transfer element according to the present invention has a high level of both springiness under small loads and low thermal resistance, and is suitable for ICs.
It is extremely excellent for cooling spears and SI chips.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す斜視図、第2図はその
使用状態を示す説明図、第3図は本発明の別の実施例を
示す平面図、第4図はその縦断面図、第5図は本発明の
さらに別の実施例を示す正面図、第6図は従来例を示す
説明図である。 1:金 屈 帯、 2:伝熱素子、 3.3’:LSIチップ、 4:ハンダボール、 5:基    盤、 6:冷 却 板、 7:スペーサ、 8:伝 熱 板、 9:ピ ス ト ン、 10ニスプリング、 11  : ス  リ   ッ   ト 。
Fig. 1 is a perspective view showing one embodiment of the present invention, Fig. 2 is an explanatory diagram showing its usage state, Fig. 3 is a plan view showing another embodiment of the invention, and Fig. 4 is a longitudinal section thereof. 5 are front views showing still another embodiment of the present invention, and FIG. 6 is an explanatory view showing a conventional example. 1: Metallic band, 2: Heat transfer element, 3.3': LSI chip, 4: Solder ball, 5: Base, 6: Cooling plate, 7: Spacer, 8: Heat transfer plate, 9: Piss ton, 10 springs, 11: slit.

Claims (3)

【特許請求の範囲】[Claims] (1)長さ方向に対して垂直ないしは斜めに多数のスリ
ットを有する薄い金属製の帯を渦巻き状に巻回して円筒
を形成したことを特徴とする伝熱素子。
(1) A heat transfer element characterized by forming a cylinder by spirally winding a thin metal band having a large number of slits perpendicularly or diagonally to the length direction.
(2)渦巻き状に巻回した金属製の帯と帯の問の非スリ
ット部分にスペーサを挿入したことを特徴とする特許請
求の範囲第1項記載の伝熱素子。
(2) The heat transfer element according to claim 1, wherein a spacer is inserted into a non-slit portion between the spirally wound metal bands.
(3)金属製の帯の端面に熱伝導の良好な金属板を伝熱
的に一体になるように取り付けたことを特徴とする特許
請求の範囲第1項又は第2項記載の伝熱素子。
(3) The heat transfer element according to claim 1 or 2, characterized in that a metal plate with good thermal conductivity is attached to the end surface of the metal band so as to be integrated with the end surface of the metal band. .
JP61138713A 1986-06-13 1986-06-13 heat transfer element Pending JPS62293745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61138713A JPS62293745A (en) 1986-06-13 1986-06-13 heat transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61138713A JPS62293745A (en) 1986-06-13 1986-06-13 heat transfer element

Publications (1)

Publication Number Publication Date
JPS62293745A true JPS62293745A (en) 1987-12-21

Family

ID=15228385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61138713A Pending JPS62293745A (en) 1986-06-13 1986-06-13 heat transfer element

Country Status (1)

Country Link
JP (1) JPS62293745A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04225265A (en) * 1990-03-30 1992-08-14 Internatl Business Mach Corp <Ibm> High-conductivity flexible fin cooling module
JP2010177697A (en) * 2005-03-08 2010-08-12 Toshiba Corp Heat conductive part
JP2011096826A (en) * 2009-10-29 2011-05-12 Fujitsu Ltd Semiconductor module
KR101321578B1 (en) * 2013-06-20 2013-10-28 주식회사 이송이엠씨 Elastic product for heat conductivity with excellent heat conductive efficiency
JP2014183256A (en) * 2013-03-21 2014-09-29 Denso Corp Joining body, semiconductor device using the same, and manufacturing method for them

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04225265A (en) * 1990-03-30 1992-08-14 Internatl Business Mach Corp <Ibm> High-conductivity flexible fin cooling module
JP2010177697A (en) * 2005-03-08 2010-08-12 Toshiba Corp Heat conductive part
JP2011096826A (en) * 2009-10-29 2011-05-12 Fujitsu Ltd Semiconductor module
JP2014183256A (en) * 2013-03-21 2014-09-29 Denso Corp Joining body, semiconductor device using the same, and manufacturing method for them
KR101321578B1 (en) * 2013-06-20 2013-10-28 주식회사 이송이엠씨 Elastic product for heat conductivity with excellent heat conductive efficiency

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