JPS62292828A - Composition for sealing semiconductor device - Google Patents
Composition for sealing semiconductor deviceInfo
- Publication number
- JPS62292828A JPS62292828A JP13504786A JP13504786A JPS62292828A JP S62292828 A JPS62292828 A JP S62292828A JP 13504786 A JP13504786 A JP 13504786A JP 13504786 A JP13504786 A JP 13504786A JP S62292828 A JPS62292828 A JP S62292828A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- composition
- present
- semiconductor device
- epoxy resins
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000007789 sealing Methods 0.000 title description 6
- 239000003822 epoxy resin Substances 0.000 claims description 19
- 229920000647 polyepoxide Polymers 0.000 claims description 19
- 229920003986 novolac Polymers 0.000 claims description 9
- 239000005011 phenolic resin Substances 0.000 claims description 8
- BUZRAOJSFRKWPD-UHFFFAOYSA-N isocyanatosilane Chemical compound [SiH3]N=C=O BUZRAOJSFRKWPD-UHFFFAOYSA-N 0.000 claims description 7
- 229920001568 phenolic resin Polymers 0.000 claims description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 11
- 239000007822 coupling agent Substances 0.000 description 8
- -1 glycidyl ester Chemical class 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- FUCCZFISQTYRNK-UHFFFAOYSA-N isocyanato(dimethyl)silane Chemical compound C[SiH](C)N=C=O FUCCZFISQTYRNK-UHFFFAOYSA-N 0.000 description 2
- AIXYPMUYMUOTOM-UHFFFAOYSA-N isocyanato(methyl)silane Chemical compound C[SiH2]N=C=O AIXYPMUYMUOTOM-UHFFFAOYSA-N 0.000 description 2
- NIZHERJWXFHGGU-UHFFFAOYSA-N isocyanato(trimethyl)silane Chemical compound C[Si](C)(C)N=C=O NIZHERJWXFHGGU-UHFFFAOYSA-N 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- AXFVIWBTKYFOCY-UHFFFAOYSA-N 1-n,1-n,3-n,3-n-tetramethylbutane-1,3-diamine Chemical compound CN(C)C(C)CCN(C)C AXFVIWBTKYFOCY-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- MPNXSZJPSVBLHP-UHFFFAOYSA-N 2-chloro-n-phenylpyridine-3-carboxamide Chemical compound ClC1=NC=CC=C1C(=O)NC1=CC=CC=C1 MPNXSZJPSVBLHP-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- RIAHASMJDOMQER-UHFFFAOYSA-N 5-ethyl-2-methyl-1h-imidazole Chemical compound CCC1=CN=C(C)N1 RIAHASMJDOMQER-UHFFFAOYSA-N 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔概 要〕
半導体装置やその他の電子回路部品を封止するためのエ
ポキシ樹脂組成物が開示される。本発明の樹脂組成物は
、多官能エポキシ樹脂と、ノボラ７り型フェノール樹脂
と、ケイ素官能型シリルイソシアネートとを少なくとも
含むことを特徴とする。本発明によれば、高温多湿状態
に長時間放置後も信頬性の高い電子部品を提供すること
ができる。゛
〔産業上の利用分野〕
本発明は半導体装置用封止組成物に関する。本発明は、
さらに詳しく述べると、主成分としてのエポキシ樹脂に
加えて、硬化剤、カップリング剤などを含んでなる半導
体装置用封止組成物に関する。本発明の封止組成物は、
高密度化、高信頼度化の要求が強い半導体装置や電子回
路部品の分野において封止用樹脂として有利に使用する
ことができる。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Summary] An epoxy resin composition for sealing semiconductor devices and other electronic circuit components is disclosed. The resin composition of the present invention is characterized in that it contains at least a polyfunctional epoxy resin, a novola 7-type phenolic resin, and a silicon-functional silyl isocyanate. According to the present invention, it is possible to provide an electronic component with high reliability even after being left in a hot and humid state for a long time. [Field of Industrial Application] The present invention relates to a encapsulating composition for semiconductor devices. The present invention
More specifically, the present invention relates to a encapsulating composition for semiconductor devices that contains a curing agent, a coupling agent, etc. in addition to an epoxy resin as a main component. The encapsulating composition of the present invention includes:
It can be advantageously used as a sealing resin in the field of semiconductor devices and electronic circuit components, where there are strong demands for higher density and higher reliability.
従来、例えば、ＩＣ，ＬＳＩなどの半導体装置やその他
の電子回路部品を封止するため、エポキシ樹脂が広く封
止用樹脂として用いられている。Conventionally, epoxy resins have been widely used as sealing resins for sealing semiconductor devices such as ICs and LSIs and other electronic circuit components.
それというのも、エポキシ樹脂は、−］’Ｒに、アミン
類、酸無水物、フェノール樹脂などの硬化剤を用いて硬
化させると、電気的、機械的、そして熱的にすぐれた性
質を奏するようになるからである。This is because epoxy resin exhibits excellent electrical, mechanical, and thermal properties when cured using curing agents such as amines, acid anhydrides, and phenolic resins. This is because it becomes like this.
ところで、樹脂封止されてなる電子部品が高温多湿状態
に長時間放置されると、樹脂バルク中や、樹脂とリード
線、素子との隙間を通じて、外部の水がパッケージ内部
に浸入し、素子上のアルミニウム配線、ポンディングパ
ッド部のアルミニウムを腐食し、断線をひきおこす問題
がある。このような問題の対策として、例えば、素子表
面のカップリング剤処理がある。カップリング剤として
は、エポキシシラン、メチルトリメトキシシラン、３−
グリシドキシプロピルトリメトキシシランなどが用いら
れている。あるいは、このカップリング剤処理に代えて
、素材の高純度化、樹脂の低応力化などが図られている
。By the way, if electronic components sealed with resin are left in high temperature and high humidity conditions for a long time, water from the outside can enter the package through the resin bulk or the gaps between the resin, lead wires, and elements, causing damage to the elements. There is a problem in that the aluminum wiring and the aluminum in the bonding pad part corrode, causing wire breakage. As a countermeasure for such a problem, for example, there is a coupling agent treatment on the surface of the element. Coupling agents include epoxysilane, methyltrimethoxysilane, 3-
Glycidoxypropyltrimethoxysilane and the like are used. Alternatively, instead of this coupling agent treatment, efforts are being made to improve the purity of the raw material and reduce the stress of the resin.
〔発明が解決しようとする問題点］
上記した対策は、しかし、高温多湿状態に長時間放置後
も信頼性の高い電子部品を提供するうえで完全とは認め
がたい。なかんずく、樹脂バルク中のｉ３ ？Ｗ水、吸
湿水に対する抑制は十分とは言えない。この対策は、し
たがって、樹脂封止型半導体装置の耐湿信頼性向上を図
るうえで、非常に重要な課題となってきている。[Problems to be Solved by the Invention] However, the above-mentioned measures cannot be recognized as perfect in providing electronic components that are highly reliable even after being left in high temperature and high humidity conditions for a long time. Above all, i3 in the resin bulk? The suppression of W water and hygroscopic water cannot be said to be sufficient. Therefore, countermeasures against this problem have become a very important issue in order to improve the moisture resistance reliability of resin-sealed semiconductor devices.
〔問題点を解決するための手段〕
上記した問題点は、本発明によれば、多官能エポキシ樹
脂、ノボラック型フェノール樹脂、そしてケイ素官能型
シリルイソシアネートを少なくとも含むことを特徴とす
る半導体装置用封止組成物によって解決することができ
る。[Means for Solving the Problems] According to the present invention, the above-mentioned problems can be solved by providing an encapsulation for a semiconductor device characterized by containing at least a polyfunctional epoxy resin, a novolac type phenol resin, and a silicon-functional silyl isocyanate. This problem can be solved by using antiseptic compositions.
本発明の封止組成物において、ノボラック型フェノール
樹脂は硬化剤として、ケイ素官能型シリルイソシアネー
トはカップリング剤として、それぞれ用いられる。本発
明の組成物は、この分野で普通に用いられている添加剤
、例えば硬化促進剤（触媒）、充填剤、離型剤、難燃剤
、その他を、その用途、その使用目的に応じて、任意に
含有することができる。In the sealing composition of the present invention, the novolak phenolic resin is used as a curing agent, and the silicon-functional silyl isocyanate is used as a coupling agent. The composition of the present invention contains additives commonly used in this field, such as curing accelerators (catalysts), fillers, mold release agents, flame retardants, and others, depending on the use and purpose of use. It can be contained arbitrarily.
本発明において用いられるエポキシ樹脂は通常知られて
いるものであり、特に限定されない。有利に使用ししる
エポキシ樹脂の一例として、ビスフェノールＡ型エポキ
シ樹脂、フェノール−ノボラック型エポキシ樹脂、タレ
ゾール−ノボラック型エポキシ樹脂などのグリシジルエ
ーテル型エポキシ樹脂、グリシジルエステル型エポキシ
樹脂、グリシジルアミン型エポキシ樹脂、環状脂肪族型
エポキシ樹脂、ハロゲン化エポキシ樹脂など、分子中に
エポキシ基を２個以上有するエポキシ樹脂を挙げること
ができる。これらのエポキシ樹脂は、単独で使用しても
、あるいは２種以上の混合系で使用してもよい。The epoxy resin used in the present invention is commonly known and is not particularly limited. Examples of epoxy resins which may be advantageously used include glycidyl ether type epoxy resins, glycidyl ester type epoxy resins, glycidyl amine type epoxy resins, such as bisphenol A type epoxy resins, phenol-novolak type epoxy resins, Talesol-novolac type epoxy resins. Examples include epoxy resins having two or more epoxy groups in the molecule, such as cycloaliphatic epoxy resins and halogenated epoxy resins. These epoxy resins may be used alone or in combination of two or more.
また、硬化剤として用いられるフェノール樹脂は、例え
ばタレゾールノボラック、フェノールノボラックなどの
ノボラック型フェノール樹脂を包含する。Further, the phenolic resin used as a curing agent includes, for example, novolak-type phenolic resins such as Talesol novolak and phenol novolak.
さらに加えて、本発明の効果を得、かつそれを向上せし
めるために、カップリング剤としてのケイ素官能型シリ
ルイソシアネートの添加は欠かせない。有用なケイ素官
能型シリルイソシアネートとしては、例えば、トリメチ
ルシリルイソシアネート、ジメチルシリルイソシアネー
ト、メチルシリルイソシアネートなどのアルキルシリル
イソシアネート、アルコキシシランイソシアネート、テ
トライソシアネート、その他を挙げることができる。Furthermore, in order to obtain and improve the effects of the present invention, it is essential to add silicon-functional silyl isocyanate as a coupling agent. Useful silicon-functional silyl isocyanates include, for example, alkylsilyl isocyanates such as trimethylsilyl isocyanate, dimethylsilyl isocyanate, methylsilyl isocyanate, alkoxysilane isocyanates, tetraisocyanates, and the like.
さらに、本発明においては、その用途、使用目的に応じ
て、例えば炭酸カルシウム、シリカ、アルミナ、チタニ
ア、ケイ酸アルミニウム、ケイ酸ジルコニウム、ガラス
、マイカ、カーボンなどの粉末や短繊維充填剤、脂肪酸
及びワックス等の離型剤、エポキシシラン、アミノシラ
ン、アルキルチタネート系化合物等のカップリング剤、
そしてさらに、アンチモンやリンの化合物、及びハロゲ
ン含有化合物のような難燃剤を加えることができる。Furthermore, in the present invention, powders and short fiber fillers such as calcium carbonate, silica, alumina, titania, aluminum silicate, zirconium silicate, glass, mica, carbon, fatty acids and Mold release agents such as wax, coupling agents such as epoxysilane, aminosilane, alkyl titanate compounds,
Additionally, flame retardants such as antimony and phosphorus compounds and halogen-containing compounds can be added.
また、上記した樹脂分の硬化反応を促進する目的で、各
種の触媒を用いることができる。このような触媒、すな
わち、硬化促進剤としては、例えば、次のような化合物
が有用であるニトリエタノールアミン、テトラメチルブ
タンジアミン、テトラメチルペンクンジアミン等の三級
アミン、セチルトリメチルアンモニウムブロマイド、セ
チルトリメチルアンモニウムクロライド、ドデシルトリ
メチルアンモニウムクロライド、トリメチルドデジルア
ンモニウムクロライド等の第四級アンモニウム塩、更に
は２−メチルイミダゾール、２−ウンデシルイミダゾー
ル、２−エチルイミダゾール、２−メチル−４−エチル
イミダゾール、１−アジン−２−メチルイミダゾール、
１−アジン−２−ウンデシルイミダゾール等のイミダゾ
ール化合物、あるいは又、トリフェニルホスフィン、メ
チルジフェニルホスフィン等のホスフィン系化合物、又
は、トリフェニルホスフィンテトラフェニルボレート、
トリエチルアミンテトラフェニルボレート等のテトラフ
ェニルボロン塩、その他。これらの触媒は、単独で使用
することも、２種以上を併用することもできる。これら
の触媒は、多官能エポキシ樹脂１００重量部に対して、
重量比で０．０１〜１０の範囲の量で用いるのが有利で
ある。Moreover, various catalysts can be used for the purpose of promoting the curing reaction of the resin component described above. As such catalysts, i.e., curing accelerators, for example, the following compounds are useful: tertiary amines such as nitriethanolamine, tetramethylbutanediamine, tetramethylpencunediamine, cetyltrimethylammonium bromide, cetyl Quaternary ammonium salts such as trimethylammonium chloride, dodecyltrimethylammonium chloride, trimethyldodedylammonium chloride, and further 2-methylimidazole, 2-undecylimidazole, 2-ethylimidazole, 2-methyl-4-ethylimidazole, 1 -Azine-2-methylimidazole,
Imidazole compounds such as 1-azine-2-undecylimidazole, or phosphine compounds such as triphenylphosphine and methyldiphenylphosphine, or triphenylphosphine tetraphenylborate,
Tetraphenylboron salts such as triethylamine tetraphenylborate, and others. These catalysts can be used alone or in combination of two or more. These catalysts are based on 100 parts by weight of the polyfunctional epoxy resin.
Advantageously, amounts in the range from 0.01 to 10 by weight are used.
本発明の半導体封止用樹脂組成物は、上記した成分を、
ロール、ニーグー、コニーダ等の常用の手段を用いて、
約６０〜８０℃の温度で加熱混練することによって調製
することができる。このようにして得られる組成物は、
約１６０〜１９０℃の温度で短時間に硬化することがで
きる。The resin composition for semiconductor encapsulation of the present invention contains the above-mentioned components,
Using common means such as roll, nigu, konida, etc.
It can be prepared by heating and kneading at a temperature of about 60 to 80°C. The composition thus obtained is
It can be cured in a short time at a temperature of about 160-190°C.
本発明の効果を確認するため、下記の第１表に記載の４
種の例を実施した。In order to confirm the effects of the present invention, the following four
Examples of species were carried out.
０−タレゾールノボラック型エポキシ樹脂（エポキシ当
量２００） 、硬化剤としてのノボラック型フェノール
樹脂（水酸基当量１０３） 、充填剤としてのシリカ粉
末、硬化促進剤としてのトリフェニルホスフィン、難燃
剤としての赤リン、着色剤としてのカーボンブランク、
離型剤としてのエステルワックス、ヘキストワノクスＥ
（商品名）、そしてカップリング剤としてのケイ素官能
型シリルイソシアネート（トリメチルシリルイソシアネ
ート、ジメチルシリルイソシアネート又はメチルシリル
イソシアネート）又はエポキシシランをそれぞれ次の第
１表に記載の所定量で配合し、４種類の配合物を得た。0-talesol novolac type epoxy resin (epoxy equivalent: 200), novolac type phenol resin as a curing agent (hydroxyl group equivalent: 103), silica powder as a filler, triphenylphosphine as a curing accelerator, red phosphorus as a flame retardant. , carbon blank as a colorant,
Ester wax as mold release agent, Hextowanox E
(trade name) and a silicon-functional silyl isocyanate (trimethylsilyl isocyanate, dimethylsilyl isocyanate, or methylsilyl isocyanate) or epoxy silane as a coupling agent in the prescribed amounts shown in Table 1 below. A formulation was obtained.
次いで、上記の配合物を７０〜８０℃の２本ロールで７
〜８分間にわたって加熱混練を行った後、冷却し粗粉砕
して目的の半導体封止用樹脂組成物を得た。上記のそれ
ぞれの樹脂組成物を用いて、２５６ビツトダイナミツク
・ＲＡＭメモリ用ＬＳＩ（１６ピン）をトランスファ成
形機で封止した。成形条件は、１７５℃、２．５分間、
７０ ｋｇ ／ ｃ＋ｊであった。Then, the above formulation was heated in two rolls at 70-80°C for 7 hours.
After heating and kneading for ~8 minutes, the mixture was cooled and coarsely pulverized to obtain the desired resin composition for semiconductor encapsulation. Using each of the above resin compositions, a 256-bit dynamic RAM memory LSI (16 pins) was sealed using a transfer molding machine. The molding conditions were: 175°C, 2.5 minutes;
It was 70 kg/c+j.
次いで、得られたＬＳＩ封止品をプッシャークツカーテ
スト（以下、ＰＣＴ試験と記す）に供した。Next, the obtained LSI sealed product was subjected to a pusher-cut test (hereinafter referred to as a PCT test).
ＰＣＴ試験は、ＬＳＩ封止品を１２１ ”Ｃ１２気圧、
９５％ＲＨ（相対湿度）下のＰＣＴ釜に投入し、所定の
放置時間後に取り出し、ＬＳＩの電気的導通チェックを
行い、素子上のアルミニウム配線の腐食断線の有無をｌ
＋１！認した。次の第２表に記載のような結果が得られ
た。なお、本試験の場合、それぞれの封止品について１
００個の試験片を作成した。PCT tests test LSI sealed products at 121" C12 atm.
The LSI is placed in a PCT pot under 95% RH (relative humidity), taken out after a predetermined standing time, and the electrical continuity of the LSI is checked to determine whether there is corrosion or disconnection of the aluminum wiring on the device.
+1! Approved. The results shown in Table 2 below were obtained. In addition, in the case of this test, 1 for each sealed product.
00 test pieces were created.
表中の数値は、記載の放置時間後のアルミニウム配線の
腐食断線個数を指している。The numerical values in the table indicate the number of corrosion breaks in the aluminum wiring after the stated standing time.
遍−」Ｌ−表
上記第２表の結果は、本発明による半導体対土用樹脂組
成物は借れて高い耐湿信頼性を有していることを立証し
ている。The results in Table 2 above demonstrate that the resin composition for semiconductors and soil according to the present invention has high moisture resistance reliability.
本発明によれば、高温多湿状態に長時間放置後も信頼性
の高い電子部品が得られる。According to the present invention, highly reliable electronic components can be obtained even after being left in high temperature and high humidity conditions for a long time.
Claims (1)
、そしてケイ素官能型シリルイソシアネートを少なくと
も含むことを特徴とする半導体装置用封止組成物。1. A encapsulating composition for a semiconductor device, comprising at least a polyfunctional epoxy resin, a novolak phenolic resin, and a silicon-functional silyl isocyanate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13504786A JPS62292828A (en) | 1986-06-12 | 1986-06-12 | Composition for sealing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13504786A JPS62292828A (en) | 1986-06-12 | 1986-06-12 | Composition for sealing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62292828A true JPS62292828A (en) | 1987-12-19 |
Family
ID=15142690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13504786A Pending JPS62292828A (en) | 1986-06-12 | 1986-06-12 | Composition for sealing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62292828A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2871182A1 (en) * | 2012-07-06 | 2015-05-13 | Korea Institute of Industrial Technology | Novolac-based epoxy compound, production method for same, composition and cured article comprising same, and use for same |
| US9534075B2 (en) | 2011-11-01 | 2017-01-03 | Korea Institute Of Industrial Technology | Isocyanurate epoxy compound having alkoxysilyl group, method of preparing same, composition including same, cured product of the composition, and use of the composition |
| US9896535B2 (en) | 2011-08-25 | 2018-02-20 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and uses thereof |
| US10689482B2 (en) | 2012-04-02 | 2020-06-23 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, composition and hardened material comprising same, use for same, and production method for epoxy compound having alkoxysilyl group |
| US11840601B2 (en) | 2019-11-15 | 2023-12-12 | Korea Institute Of Industrial Technology | Composition of alkoxysilyl-functionalized epoxy resin and composite thereof |
-
1986
- 1986-06-12 JP JP13504786A patent/JPS62292828A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9896535B2 (en) | 2011-08-25 | 2018-02-20 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and uses thereof |
| US9534075B2 (en) | 2011-11-01 | 2017-01-03 | Korea Institute Of Industrial Technology | Isocyanurate epoxy compound having alkoxysilyl group, method of preparing same, composition including same, cured product of the composition, and use of the composition |
| US10689482B2 (en) | 2012-04-02 | 2020-06-23 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, composition and hardened material comprising same, use for same, and production method for epoxy compound having alkoxysilyl group |
| EP2871182A1 (en) * | 2012-07-06 | 2015-05-13 | Korea Institute of Industrial Technology | Novolac-based epoxy compound, production method for same, composition and cured article comprising same, and use for same |
| EP2871182A4 (en) * | 2012-07-06 | 2016-03-16 | Korea Ind Tech Inst | NOVOLAC-BASED EPOXY COMPOUND, MANUFACTURING METHOD THEREOF, COMPOSITION AND CURED ARTICLE COMPRISING THE SAME AND USE THEREOF |
| US9670309B2 (en) | 2012-07-06 | 2017-06-06 | Korea Institute Of Industrial Technology | Novolac-based epoxy compound, production method for same, composition and cured article comprising same, and use for same |
| US11840601B2 (en) | 2019-11-15 | 2023-12-12 | Korea Institute Of Industrial Technology | Composition of alkoxysilyl-functionalized epoxy resin and composite thereof |
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