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JPS622675A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS622675A
JPS622675A JP60142242A JP14224285A JPS622675A JP S622675 A JPS622675 A JP S622675A JP 60142242 A JP60142242 A JP 60142242A JP 14224285 A JP14224285 A JP 14224285A JP S622675 A JPS622675 A JP S622675A
Authority
JP
Japan
Prior art keywords
light emitting
electrode
emitting diode
chip
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60142242A
Other languages
Japanese (ja)
Inventor
Masatada Kawai
河合 正雅
Seiki Murakami
清貴 村上
Riyuuji Kurogama
龍司 黒釜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP60142242A priority Critical patent/JPS622675A/en
Publication of JPS622675A publication Critical patent/JPS622675A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は発光ダイオードに関し、更に詳しくは、発光効
率を向上させた発光ダイオードに関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a light emitting diode, and more particularly to a light emitting diode with improved luminous efficiency.

(従来の技術) 発光ダイオードはPN接合部に直流電圧を印加して、該
PN接合部から発光せしめる半導体素子である。通常の
ランプ等に比較して、形状が大幅に小さいので各種の情
報表示用光源として、近年多用されている。
(Prior Art) A light emitting diode is a semiconductor element that emits light from the PN junction by applying a DC voltage to the PN junction. Since they are much smaller in size than ordinary lamps, they have been widely used in recent years as light sources for displaying various information.

第6図は従来の発光ダイオードチップ(以下LEDチッ
プという)の構成例を示す図である。図において、1は
各辺がQ、3mm程度の大きさのチップ、2【よアノー
ド電極、3はカソード電極である。カソード電極3は、
通常、チップ1の底面全てが電極として形成きれ、アノ
ード電極2は、通常、発光面10の中央部にワイヤボー
ディングにより取付けられる。このように構成されたL
EDチップの電極2.3間に直流電圧を印加すると、チ
ップ]の全体から発光する。このままでは、商品性がな
いので、チップ1全体を透明なモールドで覆い、アノー
ド、カソードそれぞれのリード線を設けて商品としての
発光ダイオード(LED)となる。
FIG. 6 is a diagram showing an example of the configuration of a conventional light emitting diode chip (hereinafter referred to as an LED chip). In the figure, 1 is a chip with each side Q and a size of about 3 mm, 2 is an anode electrode, and 3 is a cathode electrode. The cathode electrode 3 is
Usually, the entire bottom surface of the chip 1 can be formed as an electrode, and the anode electrode 2 is usually attached to the center of the light emitting surface 10 by wire boarding. L configured like this
When a DC voltage is applied between the electrodes 2 and 3 of the ED chip, light is emitted from the entire chip. As it is, it is not commercially viable, so the entire chip 1 is covered with a transparent mold, and lead wires for the anode and cathode are provided to form a light emitting diode (LED) as a commercial product.

(発明が解決しようとする問題点) 第6図に示すようなチップを用いると、発光面10の中
央部に電極2が形成されているため、チップ1が発光し
ても発光面10がらの発光が電極2により一部遮断され
てしまい、発光効率が悪い。
(Problems to be Solved by the Invention) When a chip as shown in FIG. Part of the light emission is blocked by the electrode 2, resulting in poor light emission efficiency.

この電極2による遮光は照度を減じ、照明むらを発生さ
せてしまう。近年、ライン形イメージセンサにより画像
情報を読取るスキャナが開発されているが、このような
スキャナにおいては、一方向の照明の一様性が問題とな
る。LEDチップを発光素子どして組込んだアレイを発
光手段として用いる場合、従来のLEDアレイでは電極
が発光面の略中夫に形成されているため、一方向に照度
むらが生じる。この照度むらは電極の形状を小さくして
も無くすることはできなかった。
This light shielding by the electrode 2 reduces the illuminance and causes uneven illumination. In recent years, scanners that read image information using line image sensors have been developed, but in such scanners, uniformity of illumination in one direction poses a problem. When an array incorporating LED chips as light emitting elements is used as a light emitting means, in the conventional LED array, the electrode is formed approximately in the middle of the light emitting surface, so that uneven illuminance occurs in one direction. This illuminance unevenness could not be eliminated even if the shape of the electrode was made smaller.

本発明はこのような点に鑑みてなされたものであって、
その目的は、少なくとも成る方向には発光面の照度むら
が生じないような発光ダイオードを実現することにある
The present invention has been made in view of these points, and
The purpose is to realize a light emitting diode that does not cause unevenness in illuminance on the light emitting surface at least in the direction of the light emitting diode.

(問題点を解決するための手段) 前記した問題点を解決する本発明は、発光面に゛  取
付ける電極をチップの゛中心からずらせて設けるように
構成したことを特徴とするものである。
(Means for Solving the Problems) The present invention, which solves the above problems, is characterized in that the electrodes attached to the light emitting surface are provided offset from the center of the chip.

(実施例) 以下、図面を参照して本発明の実施例を詳細に説明する
(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

第1図は本発明の一実施例を示す構成図である。FIG. 1 is a block diagram showing an embodiment of the present invention.

図に示す実施例は発光面のみを示しており、その他の形
状は第6図に示す従来例と同様である。
The embodiment shown in the figure shows only the light emitting surface, and the other shapes are the same as the conventional example shown in FIG.

(イ)はアノード電ti<以下単に電極という)を1個
設けた例、(口〉は電極を2個設けた例をそれぞれ示し
ている。尚、図中斜線で示す領域が電極を示す。(イ)
に示す実施例の場合、電極11が発光面10の1つの隅
に形成されており、(ロ)に示す実施例の場合、電極1
2.13は発光面10の対向する2隅にそれぞれ形成さ
れている。
(a) shows an example in which one anode electrode ti (hereinafter simply referred to as an electrode) is provided, and (a) shows an example in which two electrodes are provided. Note that the shaded areas in the figure indicate the electrodes. (stomach)
In the case of the embodiment shown in (B), the electrode 11 is formed at one corner of the light emitting surface 10, and in the case of the embodiment shown in (B), the electrode 11 is formed at one corner of the light emitting surface 10.
2.13 are formed at two opposing corners of the light emitting surface 10, respectively.

このように、電極を発光面10の中心からずらせて設け
ると、発光面の中央部が電極のために遮光されることが
ない。しかも、図の対角線方向(A−A′方向)には遮
光されない。従って、この対角線の方向にLEDを配列
するか或いはLEDチップを配列すると、少なくともこ
の対角線方向には均一な明かるさの照明光を得ることが
でき、且つ均一照明の長さも自由に設定することができ
る。尚、LEDチップを1列に配してLEDアレイを構
成する場合、カソード電極部は全LEDチップを共通の
ベース電極上に配置し、アノード電極のみ各LEDに独
立に取付ければよい。従って、本発明によれば、ライン
形イメージセンサの照明用として用いて好適な光源が得
られる。
When the electrodes are provided offset from the center of the light emitting surface 10 in this way, the central portion of the light emitting surface is not blocked by the electrodes. Furthermore, light is not blocked in the diagonal direction (A-A' direction) in the figure. Therefore, by arranging LEDs or LED chips in the diagonal direction, it is possible to obtain illumination light with uniform brightness at least in this diagonal direction, and the length of the uniform illumination can also be freely set. Can be done. Note that when an LED array is configured by arranging LED chips in one row, all the LED chips may be arranged on a common base electrode as the cathode electrode portion, and only the anode electrode may be attached to each LED independently. Therefore, according to the present invention, a light source suitable for use in illuminating a line-type image sensor can be obtained.

第2図は本発明に係る発光ダイオードの製造法を示す図
である。図の矩形で囲まれた部分L1〜L12がそれぞ
れしEDチップを構成している。
FIG. 2 is a diagram showing a method for manufacturing a light emitting diode according to the present invention. Portions L1 to L12 surrounded by rectangles in the figure each constitute an ED chip.

図の斜線領域が電橋部である。各LEDチップの境界部
に図に示すような矩形の電極部を形成せしめておき、4
分割して切出すと、各々のLEDチップの形状は第1図
(イ)に示すようなものとなる。このような製造法によ
れば、取付ける電極数は、従来の1/4で済み、且つ電
陽の面積が大きくできるのでLEDチップの製造が容易
になり、製造工数を大幅に短縮することができる。
The shaded area in the figure is the electric bridge section. A rectangular electrode portion as shown in the figure is formed at the boundary of each LED chip, and
When divided and cut out, each LED chip has a shape as shown in FIG. 1(A). According to this manufacturing method, the number of electrodes to be attached can be reduced to 1/4 of the conventional one, and the area of the electrodes can be increased, making it easier to manufacture LED chips and significantly reducing the number of manufacturing steps. .

尚、上述の説明においては、電極部の形状として矩形を
用いたが、これに限る必要はなく、2軸対称形の形状で
あればどのような形であってもよい。但し、遮光面積は
考慮する必要がある。第3図は電極部の種々の形状を示
す図である。(イ)は円、(ロ)は多角形、(ハ)は四
角形である。
In the above description, the shape of the electrode portion is rectangular, but it is not limited to this, and may be any shape as long as it is biaxially symmetrical. However, it is necessary to consider the shade area. FIG. 3 is a diagram showing various shapes of the electrode portion. (A) is a circle, (B) is a polygon, and (C) is a quadrilateral.

このような2軸対称形のものであれば、どのようなもの
であってもよい。
Any type of biaxially symmetrical type may be used.

上述の製造法の説明では、LEDチップの1隅に電極を
配置する場合を例にとつが、それぞれ対角線上の対向す
る2隅に電極を有する第1図(ロ)に示すようなLED
チップの製造も可能である。
In the above description of the manufacturing method, an example is taken in which an electrode is placed at one corner of the LED chip, but an LED as shown in FIG. 1 (b) having electrodes at two diagonally opposite corners,
It is also possible to manufacture chips.

この場合、電極数は第4図に示すように、第2図の製造
法の場合に比較して2倍になる。従って、従来の場合の
1/2に電極数が減少することになる。又、上述の説明
では、電極をUEDチップの4隅の何れかに設けた場合
を例にとったが本発明はこれに限る必要はなく、発光面
の中心からずらせて形成されたものであれば、どの位置
であってもよい。例えば第5図に示すような形状のL 
E Dチップであってもよい。図の斜線部が電極である
In this case, as shown in FIG. 4, the number of electrodes is doubled compared to the manufacturing method shown in FIG. Therefore, the number of electrodes is reduced to 1/2 of the conventional case. Further, in the above explanation, the case where the electrodes are provided at any of the four corners of the UED chip is taken as an example, but the present invention is not limited to this, and the electrodes may be formed offset from the center of the light emitting surface. For example, it can be in any position. For example, L with a shape as shown in Figure 5.
It may be an ED chip. The shaded area in the figure is the electrode.

何れの場合も、2つの対角線方向に遮光されることがな
いので、LEDアレイを製造する場合に設計の自由度が
増えるので製造上有利となる。
In either case, since light is not blocked in two diagonal directions, the degree of freedom in design increases when manufacturing an LED array, which is advantageous in manufacturing.

(発明の効果) 以上詳細に説明したように、本発明によれば、発光面の
中心からずらせて電極を設けること(二より、発光面の
中央部が遮光されることがなくなるので、均一な照度を
有する発光ダイオードを実現することができる。本発明
によれば、少なくとも1つの対角線方向にR1′iを設
けないようにしてLEDチップを1列に配列することに
より、列方向に照度の均一な照明用光源を実現すること
ができ、ライン形イメージセンサに用いて好適である。
(Effects of the Invention) As explained in detail above, according to the present invention, the electrode is provided at a position shifted from the center of the light emitting surface (secondly, since the central part of the light emitting surface is not blocked from light, a uniform According to the present invention, by arranging the LED chips in one row without providing R1'i in at least one diagonal direction, it is possible to realize a light emitting diode with uniform illuminance in the row direction. It is possible to realize a light source for illumination, and it is suitable for use in a line-type image sensor.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す構成図、第2図は本発
明に係る発光ダイオードの製造法を示ブ図、第3図は電
極部の種々の形状を示す図、第4図は本発明に係る発光
ダイオードの他の製造法を示す図、第5図は電極の種々
の形状を示す図、第6図はLEDチップの従来構成例を
示す図である。 1・・・チップ     2・・・アノード電極3・・
・カソード電極  10・・・発光面11〜13・・・
電極 L1〜l−+?・・・しEDチップ 特許出願人 小西六写奥工業株式会社 代  理  人  弁理士  井  島  藤  治外
1名 第1゛図 洒零2図 勇萼5四口 第6図 10;炎洗面
FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a diagram showing a method for manufacturing a light emitting diode according to the present invention, FIG. 3 is a diagram showing various shapes of electrode parts, and FIG. 5 is a diagram showing another method of manufacturing a light emitting diode according to the present invention, FIG. 5 is a diagram showing various shapes of electrodes, and FIG. 6 is a diagram showing an example of a conventional structure of an LED chip. 1... Chip 2... Anode electrode 3...
・Cathode electrode 10... Light emitting surface 11-13...
Electrode L1~l-+? ...ED chip patent applicant Konishi Rokushaoku Kogyo Co., Ltd. Agent Patent attorney Fuji Ijima 1 person 1st figure

Claims (2)

【特許請求の範囲】[Claims] (1)発光面に取付ける電極をチップの中心からずらせ
て設けるように構成したことを特徴とする発光ダイオー
ド。
(1) A light emitting diode characterized in that the electrodes attached to the light emitting surface are arranged offset from the center of the chip.
(2)前記チップの少なくとも1つの対角線方向には電
極を設けないようにしたことを特徴とする特許請求の範
囲第1項記載の発光ダイオード。
(2) The light emitting diode according to claim 1, wherein no electrode is provided in at least one diagonal direction of the chip.
JP60142242A 1985-06-28 1985-06-28 Light emitting diode Pending JPS622675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60142242A JPS622675A (en) 1985-06-28 1985-06-28 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60142242A JPS622675A (en) 1985-06-28 1985-06-28 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS622675A true JPS622675A (en) 1987-01-08

Family

ID=15310742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60142242A Pending JPS622675A (en) 1985-06-28 1985-06-28 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS622675A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03233978A (en) * 1990-02-08 1991-10-17 Matsushita Electric Ind Co Ltd Light emitting device
JPH0494380U (en) * 1991-01-11 1992-08-17
JPH04135557U (en) * 1991-06-12 1992-12-16 日立電線株式会社 Automatic transport system for long wire reel
JPH0526962U (en) * 1991-09-17 1993-04-06 村田機械株式会社 Package inspection device
JPH06338632A (en) * 1993-05-31 1994-12-06 Nichia Chem Ind Ltd Gallium nitride compound semiconductor light-emitting element
JP3027676U (en) * 1996-02-06 1996-08-13 日亜化学工業株式会社 Gallium nitride semiconductor light emitting device
JPH10275935A (en) * 1997-03-28 1998-10-13 Rohm Co Ltd Semiconductor light emitting device
JP2002374004A (en) * 2001-06-14 2002-12-26 Nitto Kogaku Kk Led array panel and lighting device
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
WO2020167401A1 (en) * 2019-02-12 2020-08-20 Corning Incorporated Uniformizing an array of leds having asymmetric optical characteristics

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03233978A (en) * 1990-02-08 1991-10-17 Matsushita Electric Ind Co Ltd Light emitting device
JPH0494380U (en) * 1991-01-11 1992-08-17
JPH04135557U (en) * 1991-06-12 1992-12-16 日立電線株式会社 Automatic transport system for long wire reel
JPH0526962U (en) * 1991-09-17 1993-04-06 村田機械株式会社 Package inspection device
US6610995B2 (en) 1993-04-28 2003-08-26 Nichia Corporation Gallium nitride-based III-V group compound semiconductor
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US6998690B2 (en) 1993-04-28 2006-02-14 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US7205220B2 (en) 1993-04-28 2007-04-17 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US7375383B2 (en) 1993-04-28 2008-05-20 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
JPH06338632A (en) * 1993-05-31 1994-12-06 Nichia Chem Ind Ltd Gallium nitride compound semiconductor light-emitting element
JP3027676U (en) * 1996-02-06 1996-08-13 日亜化学工業株式会社 Gallium nitride semiconductor light emitting device
JPH10275935A (en) * 1997-03-28 1998-10-13 Rohm Co Ltd Semiconductor light emitting device
JP2002374004A (en) * 2001-06-14 2002-12-26 Nitto Kogaku Kk Led array panel and lighting device
WO2020167401A1 (en) * 2019-02-12 2020-08-20 Corning Incorporated Uniformizing an array of leds having asymmetric optical characteristics
US11114420B2 (en) 2019-02-12 2021-09-07 Corning Incorporated Uniforming an array of LEDs having asymmetric optical characteristics

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