JPS62260817A - Epoxy resin composition and sealed semiconductor device - Google Patents
Epoxy resin composition and sealed semiconductor deviceInfo
- Publication number
- JPS62260817A JPS62260817A JP61103812A JP10381286A JPS62260817A JP S62260817 A JPS62260817 A JP S62260817A JP 61103812 A JP61103812 A JP 61103812A JP 10381286 A JP10381286 A JP 10381286A JP S62260817 A JPS62260817 A JP S62260817A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- silicone oil
- resin composition
- modified epoxy
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 32
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000000203 mixture Substances 0.000 title claims abstract description 8
- 229920002545 silicone oil Polymers 0.000 claims abstract description 17
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 14
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 22
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 11
- 125000003277 amino group Chemical group 0.000 claims description 7
- 239000003054 catalyst Substances 0.000 claims description 6
- 229920003986 novolac Polymers 0.000 abstract description 9
- 238000007789 sealing Methods 0.000 abstract description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000003795 chemical substances by application Substances 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 4
- 239000003086 colorant Substances 0.000 abstract description 3
- 239000003063 flame retardant Substances 0.000 abstract description 3
- -1 mold release Substances 0.000 abstract description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000000945 filler Substances 0.000 abstract description 2
- SWMBQMGPRYJSCI-UHFFFAOYSA-N octylphosphane Chemical compound CCCCCCCCP SWMBQMGPRYJSCI-UHFFFAOYSA-N 0.000 abstract description 2
- 125000003282 alkyl amino group Chemical group 0.000 abstract 2
- 125000006309 butyl amino group Chemical group 0.000 abstract 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 abstract 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 abstract 1
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 abstract 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 abstract 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- AZTSDLGKGCQZQJ-UHFFFAOYSA-N antimony;hydrate Chemical compound O.[Sb] AZTSDLGKGCQZQJ-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- DLIJPAHLBJIQHE-UHFFFAOYSA-N butylphosphane Chemical group CCCCP DLIJPAHLBJIQHE-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical group C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000012803 melt mixture Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical group CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は成形性にすぐれかつ熱衝撃を受けた場合の耐ク
ラツク性に優れた特長を持つ低応力エポキシ樹脂組成物
および半導体封止装置に関するものでちる。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a low-stress epoxy resin composition having excellent moldability and excellent cracking resistance when subjected to thermal shock, and a semiconductor encapsulation device. It's a thing.
コ／デ／サー・ダイオード、トランジスターなどの個別
半導体またはＩＣ，ＬＳＩなどの集積回路においては半
導体素子を機械的・電気的な外的環境から保護するだめ
の封止技術としては、気密封止、セラミック封止、プラ
スチック封止などが行われているが、安価で量産性にす
ぐれ経済的に有利なプラスチック封止（中でもエビキシ
樹ｆ３￥１）が主流である。しかし、エポキシ樹脂は耐
湿性、応力等に問題があり、信頼性において劣っている
。さらにシリコーンチップとの膨張係数の差が太きいた
め、硬化後、内部応力が発生する温度サイクル試験、半
田耐熱試験において内部応力の増大により半導体素子配
線や半導体素子保Ｈｆｐｍにずれやキレンが生じたシ、
半導体素子のボンディング線の切断されるという問題点
を有している。一方、近来、半導体素子の大型化に伴な
い、半導体素子に対する封止用樹脂の内部応力を小さく
することが望まれる。内部応力を低下させるには一般シ
て線膨長係数を下げるか、曲げ弾性率下げるか、ガラス
転移温度上げるかのいずれかによって達成できる。For individual semiconductors such as co/de/circuit diodes and transistors, or integrated circuits such as ICs and LSIs, the sealing technology that protects the semiconductor elements from the external mechanical and electrical environment is hermetic sealing, Ceramic sealing, plastic sealing, etc. have been used, but plastic sealing (Ebikishiki F3 ¥1) is the mainstream because it is inexpensive, mass-producible, and economically advantageous. However, epoxy resins have problems with moisture resistance, stress, etc., and are inferior in reliability. Furthermore, due to the large difference in expansion coefficient from the silicone chip, after curing, during temperature cycle tests and solder heat resistance tests that generate internal stress, the increase in internal stress caused misalignment and cracks in semiconductor element wiring and semiconductor element holding Hfpm. C,
There is a problem in that the bonding wires of the semiconductor elements are cut. On the other hand, in recent years, as semiconductor devices have become larger, it has been desired to reduce the internal stress of a sealing resin to the semiconductor device. In general, internal stress can be reduced by lowering the coefficient of linear expansion, lowering the flexural modulus, or increasing the glass transition temperature.
線膨長係数を小さくするためには無機光てん材を添加す
ることが行われるが多量に添加して線膨長係数を小さく
すると逆に曲げ弾性率が大きくなる。In order to reduce the coefficient of linear expansion, an inorganic optical fiber is added. However, if a large amount is added to reduce the coefficient of linear expansion, the flexural modulus of elasticity increases.
曲げ弾性率を小さくするためには可塑性付与剤（例えば
シリコーンオイル）を添加することが行われる。しかし
大証に添加すると成形時に流出する。In order to reduce the flexural modulus, a plasticizer (for example, silicone oil) is added. However, if added to OSE, it will flow out during molding.
また架橋密度の低い樹脂を用い曲げ弾性率を下げると、
ガラス転移温度の低下や線膨長係数の増加が起こる。ガ
ラス転移温度を上げすぎると曲げ弾性率が大きくなると
いう問題を生じる。したがって低応力化を達成するため
にはこれらの諸問題を解決しなけれ―ならない。In addition, if a resin with a low crosslink density is used to lower the flexural modulus,
A decrease in the glass transition temperature and an increase in the linear expansion coefficient occur. If the glass transition temperature is raised too much, a problem arises in that the flexural modulus increases. Therefore, in order to achieve low stress, these problems must be solved.
本発明は従来成形性に問題があシ、市場レベルでの適用
ができなかったシリコーンオイルによる低応力化ニブキ
シ樹脂組成物を抜本的に改良し、産業工業レベルでの適
用即ち実用的製品の開発を目的として研究した結果、有
機ホスフィンをシリコーンオイル変性する時の必須の触
媒とすることによシ成形性に優れた低応力エポキシ樹脂
組成物が得られることを見出したものである。The present invention has fundamentally improved the stress-lowering niboxy resin composition using silicone oil, which conventionally had problems with moldability and could not be applied at the market level, and has been applied at the industrial level, that is, the development of practical products. As a result of research aimed at this purpose, it was discovered that a low stress epoxy resin composition with excellent moldability could be obtained by using organic phosphine as an essential catalyst when modifying silicone oil.
本発明は有機ホスフィンを触媒とし、末端にアミノ基を
有する二メキシ樹脂とシリコーンオイルとを反応して得
られるシリコーンオイル変性エポキシ樹脂を配合するこ
とを特徴とするエフキシ樹脂組成物およびこれによって
封止された半導体装置である。The present invention relates to an efoxy resin composition containing a silicone oil-modified epoxy resin obtained by reacting a dimexy resin having an amino group at the terminal with silicone oil using an organic phosphine as a catalyst, and sealing using the same. This is a semiconductor device manufactured by
ここでいう有機ホスフィンは第１、第２、第３ホスフイ
ン、オクチルホスフィン、ジフェニルホスフィン、ブチ
ルホスフィン、等でｓｂ、−ｍ又は二種以上を使用する
。ここで有機ホスフィンを触媒として使用するのはエゼ
キシ基を開環させその後のアミノ基の窒素の攻撃を受け
やすくしアミノ基とおきかわる役目をする。The organic phosphine mentioned here includes primary, secondary, and tertiary phosphine, octylphosphine, diphenylphosphine, butylphosphine, etc., and sb, -m, or two or more thereof are used. The use of organic phosphine as a catalyst here serves to open the ring of the ethexy group, thereby making the amino group more susceptible to attack by nitrogen, thereby replacing the amino group.
末端アミノ基を有するシリコーンオイルとはである。What is silicone oil with terminal amino groups?
変性されるエフ１！キシ樹脂とはフェノール又はクレゾ
ールノボラック型エポキシ樹脂である。F1 being denatured! The xy resin is a phenol or cresol novolac type epoxy resin.
ニブキシ樹脂組成物とは、前記シリコーンオイル変性エ
ポキシ樹脂を必須要件とし、更に他のエポキシ樹脂及び
硬化剤、硬化促進剤、充てん基材、離型剤、着色剤、難
燃剤である。The niboxy resin composition has the silicone oil-modified epoxy resin as an essential requirement, and further includes other epoxy resins, a curing agent, a curing accelerator, a filling base material, a mold release agent, a coloring agent, and a flame retardant.
他のエポキシ樹脂はフェノールノボラック型エポキシ樹
脂、クレゾールノボラック型エゴキシ樹脂である。Other epoxy resins are phenol novolak type epoxy resins and cresol novolak type epoxy resins.
硬化剤はフェノールノボラック、芳香族アミノ、酸無水
物である。Hardeners are phenolic novolaks, aromatic amino acids, and acid anhydrides.
硬化促進剤は第３級アミノ類である。Curing accelerators are tertiary aminos.
充てん基材はシリカ粉、アルミナ粉、ガラス繊維である
。The filling base materials are silica powder, alumina powder, and glass fiber.
離型材はステアリン酸、天然ワックス、合成ワックスで
ある。The mold release agent is stearic acid, natural wax, or synthetic wax.
着色材はカーボンブラック、金属酸化物、有機染料であ
る。Colorants are carbon black, metal oxides, and organic dyes.
難燃材はＢｒ含有エポキシ、三酸化アンチモン、水利ア
ルミナである。The flame retardants are Br-containing epoxy, antimony trioxide, and water-containing alumina.
本発明に使用するシリコーンオイル変性エイキシ樹脂は
有機ホスフィンを触媒として末端にアミノ基を有するシ
リコーンオイル単独もしくは重合度の異なったものを２
種以上をエポキシ樹脂と反応させ得ることができる。The silicone oil-modified Eixy resin used in the present invention is a silicone oil having an amino group at the end or two silicone oils having different degrees of polymerization using an organic phosphine as a catalyst.
More than one species can be reacted with the epoxy resin.
反応は加熱等を行うことによシ促進でき例えば、加熱条
件としては１００〜２００℃、２〜４時間をあげること
ができる。The reaction can be accelerated by heating, for example, heating conditions may be 100 to 200° C. for 2 to 4 hours.
ここで変性するシリコーンオイルは重合度が５０〜３０
０のものが望ましい５０未満になると耐温性の低下や硬
化挙動の制御がむずかしい。３００を越えるようになる
と成形品表面にむらが発生しやすく、シリコーンオイル
がＫじみ出てくる。シリコーンオイル変性エポキシ樹脂
の使用量としては組成物全量に対して５重量％以下を使
用するのが好ましい。５を量チ以上を越えると成形性（
硬化性）が問題となる。The silicone oil modified here has a degree of polymerization of 50 to 30.
When it is less than 50, which is preferably 0, temperature resistance decreases and hardening behavior becomes difficult to control. When it exceeds 300, unevenness tends to occur on the surface of the molded product, and silicone oil oozes out. The amount of silicone oil-modified epoxy resin used is preferably 5% by weight or less based on the total amount of the composition. If 5 exceeds the weight, the moldability (
hardenability) is a problem.
このように本発明はシリコーン変性をしたエポキシ樹脂
を使用することによシ成形性にすぐれたシリコーンオイ
ルの発水性よシ耐湿性にすぐれ変性によシリコーンオイ
ルが均一に分散されるため低応力にすぐれたニーキシ樹
脂組成物である。In this way, the present invention uses a silicone-modified epoxy resin, which makes the silicone oil excellent in moldability, water repellency, and moisture resistance. It is an excellent Nixie resin composition.
シリコーンオイルとエポキシ樹脂とは有機ホスフィンを
介在させることによシ化学結合で一体化しているシリコ
ーン−エポキシ樹脂なる結合が形成されるのでシリコー
ンオイルが流出することがない０
〔実施例〕
以下、半導体封止用成形材料での検討例で説明する。Silicone oil and epoxy resin are integrated by a chemical bond by interposing an organic phosphine, and a silicone-epoxy resin bond is formed, so the silicone oil does not leak out. This will be explained using an example of a study using a molding material for sealing.
本発明による実施例は従来の技術にくらべて成形性・耐
湿性・耐クラツク性の点で優れておシ工業的に利用でき
る高付加価値を有している。The embodiments of the present invention are superior in moldability, moisture resistance, and crack resistance compared to conventional techniques, and have high added value that can be used industrially.
実施例で用いた原料は次の通シである。又、配合におけ
る部は全て重量部である。The raw materials used in the examples are as follows. Also, all parts in the formulation are parts by weight.
フェノールノボラック型
エポキシ樹脂 旭チパ■ ＥＣＮ
−１２７３硬化剤 住人ベークライト■
フＩ／−Ｌ／Ｊ、’ラック硬化促進剤
住人化学工業■ ヌミキュアーＤ臭化エゴキシ樹脂
日本北条■ ＢＲＥＮ三酸化アンチモン
住人金属鉱山■充てん材 部課■
ＲＤ−８表面処理材 日本ユ
ニカー■ Ａ−１８６離型材 野田
ワックス■有機ホスフィン ケーアイ化成■
ＰＰ−３６０Ｍシリコーンジアミノ 信越化学工業＠
Ｘ２２−１６１シリコーンオイル変性エポキシの合成品
フェノールノボラック型エイキシ樹脂８部と末端ジアミ
ノシリコーンオイル（シリコーンジアミノの重合度の異
なる）ｂ部と有機ホスフィンＯ２部を表１の様に１６０
℃、４時間（樹脂溶融後の正味時間）溶融混合冷却後粉
砕し３ａのシリコーンオイル変性エポキシ樹脂を得た。Phenol novolac type epoxy resin Asahi Chipa■ ECN
-1273 Hardener Resident Bakelite ■
F I/-L/J, 'Lack curing accelerator
Susumu Chemical Industry ■ Numicure D Brominated Egoxy Resin
Japan Hojo ■ BREN Antimony Trioxide Resident Metal Mine ■ Filling Materials Department ■
RD-8 surface treatment material Nippon Unicar■ A-186 mold release material Noda wax ■Organic phosphine KII Kasei■
PP-360M silicone diamino Shin-Etsu Chemical @
X22-161 Synthetic product of silicone oil-modified epoxy 8 parts of phenol novolak type epoxy resin, part b of terminal diamino silicone oil (with different degree of polymerization of silicone diamino) and 2 parts of organic phosphine O are added to 160 parts as shown in Table 1.
℃ for 4 hours (net time after resin melting), melted, mixed, cooled, and pulverized to obtain silicone oil-modified epoxy resin 3a.
表 １
実施例
フェノールノボラック型エフｆ？キシ樹脂と硬化剤、硬
化促進剤、充°〔ん材、三酸化アンチモン、臭累化エデ
キシ樹脂、表面処理材、顔料、に型剤、フェノールノボ
ラック型エポキシ樹脂と末端ジアミノシリコーンオイル
の溶融混合品１、ＩＩ、ＩＩＩを表２のように配合しヘ
ンシェルミキサーにて混合した後、１００℃の加熱ロー
ルで３分間混練し、数種の低圧封入成形材料を得た。こ
れらの材料の成形性、信頼性を好個した結果、表２に示
すように本発明によると末端シリコーンジアミノの単純
添加品に比べ成形性、耐クラツク性等が極めて優れてい
ることが判明した。Table 1 Examples of phenol novolak type F? Melt mixture of epoxy resin, curing agent, curing accelerator, filler, antimony trioxide, odorized edexy resin, surface treatment material, pigment, molding agent, phenol novolac type epoxy resin and terminal diamino silicone oil. 1, II, and III were blended as shown in Table 2, mixed in a Henschel mixer, and then kneaded for 3 minutes with heated rolls at 100°C to obtain several types of low-pressure encapsulated molding materials. As a result of evaluating the moldability and reliability of these materials, as shown in Table 2, the present invention was found to be extremely superior in moldability, crack resistance, etc., compared to products simply added with terminal silicone diamino. .
＊１１６ｐｉｎ ＤＩＰを成形した時のり−ドピン上の
パリ発生程度で判定タイバ一部までの距離のｈ以下の時
Ａ１１〜局の時Ｂ、Ｖ２〜Ｖ４の時Ｃ１乞以上（タイバ
ーを超えた）Ｄ
＊２ ＴＣＴ、 ４ｗＸ ９ｔｍａの大きさの模擬素
子を封止した１６ｐｉｎ ＤＩＰに一６５℃（３０分）
二室温（５分）２１５０℃（３０分）なる熱衝撃を３０
０サイクル与えクラック発生数／総数で判定。* When molding 116-pin DIP - Judgment based on the degree of occurrence of paris on the pin D When the distance to a part of the tie bar is less than h, A11 - B, when V2 to V4, C1 or more (exceeds the tie bar) D *2 TCT, 16-pin DIP sealed with a simulated element of 4w x 9tma at -65℃ (30 minutes)
Thermal shock at two room temperatures (5 minutes) and 2150℃ (30 minutes) for 30 minutes.
Judging by the number of cracks generated after 0 cycles/total number.
＊３ＴＳＴ、４鰭Ｘ６ｍの大きさの模擬素子を封止した
一１６ｐｉｎ ＤＩＰに一１９５℃（２分）、１５０℃
（２分）なる熱衝撃を３００サイクル与えクラック発生
数／総数で判定。*3TST, 195℃ (2 minutes), 150℃ to a 16-pin DIP sealed with a simulated element of 4 fins x 6m.
A thermal shock of (2 minutes) was applied for 300 cycles and judged by the number of cracks generated/total number.
＊４耐湿性、アルミ模擬素子を封止した１６ｐｉｎＤＩ
Ｐを１３５℃、１００％の条件で１５００ｈｒ保管しア
ルミ腐蝕による不良率／ａ数で判定。*4 Moisture-resistant, 16-pin DI with sealed aluminum simulated element
P was stored at 135°C and 100% for 1500 hours and determined by the percentage defective due to aluminum corrosion/number of a.
Claims (1)
オイルとを有機ホスフィンを触媒として反応させてなる
シリコーンオイル変性エポキシ樹脂を配合することを特
徴とするエポキシ樹脂組成物。 ２）エポキシ樹脂と末端にアミノ基を有するシリコーン
オイルとを有機ホスフィンを触媒として反応させてなる
シリコーンオイル変性エポキシ樹脂を配合してなるエポ
キシ樹脂組成物によって封止されたことを特徴とする半
導体封止装置。[Scope of Claims] 1) An epoxy resin composition comprising a silicone oil-modified epoxy resin obtained by reacting an epoxy resin with a silicone oil having an amino group at the terminal using an organic phosphine as a catalyst. 2) A semiconductor package sealed with an epoxy resin composition containing a silicone oil-modified epoxy resin obtained by reacting an epoxy resin with a silicone oil having an amino group at the end using an organic phosphine as a catalyst. Stop device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61103812A JPS62260817A (en) | 1986-05-08 | 1986-05-08 | Epoxy resin composition and sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61103812A JPS62260817A (en) | 1986-05-08 | 1986-05-08 | Epoxy resin composition and sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62260817A true JPS62260817A (en) | 1987-11-13 |
| JPH0588847B2 JPH0588847B2 (en) | 1993-12-24 |
Family
ID=14363813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61103812A Granted JPS62260817A (en) | 1986-05-08 | 1986-05-08 | Epoxy resin composition and sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62260817A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6317928A (en) * | 1986-07-10 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPS6317927A (en) * | 1986-07-09 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPS63164451A (en) * | 1986-12-26 | 1988-07-07 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPH01268721A (en) * | 1988-07-09 | 1989-10-26 | Sunstar Eng Inc | Modified polysiloxane |
| EP0430254A2 (en) * | 1989-11-30 | 1991-06-05 | Dow Corning Toray Silicone Company, Limited | Curable epoxy resin compositions |
| US5189082A (en) * | 1991-09-26 | 1993-02-23 | Cheil Industries, Inc. | Imide epoxy resins for sealing semiconductor elements |
| US5254605A (en) * | 1991-11-30 | 1993-10-19 | Cheil Industries, Inc. | Imide epoxy resin composition for sealing semiconductor elements |
| US5266612A (en) * | 1992-01-18 | 1993-11-30 | Cheil Industries, Inc. | Imide epoxy resin composition for sealing semiconductor elements |
| JPH0885718A (en) * | 1995-03-16 | 1996-04-02 | Nitto Denko Corp | Semiconductor device |
-
1986
- 1986-05-08 JP JP61103812A patent/JPS62260817A/en active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6317927A (en) * | 1986-07-09 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPS6317928A (en) * | 1986-07-10 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPS63164451A (en) * | 1986-12-26 | 1988-07-07 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPH01268721A (en) * | 1988-07-09 | 1989-10-26 | Sunstar Eng Inc | Modified polysiloxane |
| EP0430254A2 (en) * | 1989-11-30 | 1991-06-05 | Dow Corning Toray Silicone Company, Limited | Curable epoxy resin compositions |
| EP0430254A3 (en) * | 1989-11-30 | 1992-07-08 | Dow Corning Toray Silicone Company, Limited | Curable epoxy resin compositions |
| US5189082A (en) * | 1991-09-26 | 1993-02-23 | Cheil Industries, Inc. | Imide epoxy resins for sealing semiconductor elements |
| US5254605A (en) * | 1991-11-30 | 1993-10-19 | Cheil Industries, Inc. | Imide epoxy resin composition for sealing semiconductor elements |
| US5266612A (en) * | 1992-01-18 | 1993-11-30 | Cheil Industries, Inc. | Imide epoxy resin composition for sealing semiconductor elements |
| JPH0885718A (en) * | 1995-03-16 | 1996-04-02 | Nitto Denko Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588847B2 (en) | 1993-12-24 |
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