JPS62247553A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce a production cost in applying laser irradiation to a semiconductor device which is produced in small quantity but many kinds by removing burrs by irradiation of laser. CONSTITUTION:Laser beams 5a, 5b are applied to a semiconductor device which is finished a resin seal. Then, the burr 4b on the surfaces of a lead 2 and a tie bar 3 and the circumference of the burr 4a along the lead 2, the tie bar 3 and the semiconductor device (primary object) 1 are removed and the remnant 4c of the burr 4a is sprayed with high pressure water 6. Since the positions of irradiation of the laser beams 5a, 5b can be set arbitrarily, a production cost is not increased even if applied to the manufacture of the semiconductor device which is produced in small quantity in the variety of many kinds.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a resin-sealed semiconductor device, and particularly to a method for removing burrs after resin-sealing.

[Conventional technology]

FIG. 2 is a partial perspective cross-sectional view of a resin-sealed semiconductor device, and [1] shows the main body of the resin-sealed semiconductor device in which a portion of the semiconductor tip and lead frame are hardened with resin.

(2) is the lead, (3) is a tie bar that temporarily connects the leads (2) and is removed when completed, (4) is the lead [2]
(4a) is the burr that protrudes from the resin between the lead (2) and the tie bar (3), and the main body +1).
(4b) is the portion of lead (2) that occurs on the surface of lead (2).

The conventional method is to remove the burr between the lead (2) shown in Figure 2, the lead (2), the tie bar (3), and the main body (
1) The method used is to prepare a male mold that fits perfectly in the space surrounded by and a corresponding female mold, push the male mold in, and remove the bar IJ (4a). Ta.

[Problem that the invention seeks to solve]

In the conventional method of manufacturing a semiconductor device as described above.

To remove the IJ (4a) between the leads (2), a mold is custom made for each semiconductor device model, and this is used to remove the IJ (4a) between the leads (2).
Since this method was used to push the parts in between, there was a problem in that the cost would be high when applied to a group of products that were produced in a wide variety of small quantities.

The present invention was made to solve the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing semiconductor devices that can be manufactured at low cost in the case of high-mix, low-volume production.

Another object of the present invention is to provide a method for manufacturing a semiconductor device that more effectively achieves the above object.

[Means for Solving the Problems] A method for manufacturing a semiconductor device according to the present invention seals a lead frame with a resin, and removes burrs between the leads 3 of the resin-sealed lead frame and on their surfaces. 7-This is a method of removing by irradiation with laser.

Further, in a method for manufacturing a semiconductor device according to another aspect of the present invention, a lead frame is sealed with a resin, and a portion of burrs between the leads of the resin-sealed lead frame and on the surfaces thereof are removed by laser irradiation. In this method, the remaining particles are removed by spraying high-pressure fluid.

[Effect]

In this invention, high IJ is removed by laser irradiation.

Further, in another aspect of the present invention, a part of the burr is removed by laser irradiation, and the remaining part is removed by high-pressure fluid spraying.

〔Example〕

Figure 1 fal, [b), (cl is a series of sectional views showing one embodiment of the present invention, (1) to (4),
(4a) and (4b) are the same or corresponding parts to the conventional ones with the same symbol, (5a) and (5b)
are both laser beams, and the former is the lead (2)
, tie bar (3), which is irradiated along the main body (1) from one side to the other until it pierces the bar IJ (m), the latter on the lead (2) or on the tie bar (3). I.J.
(4b), which is irradiated from both sides to remove (4b);
c) is the remaining part of the bar IJ (4b) removed by the laser beam (5a), and (6) is the high-pressure fluid that is removed by spraying the remaining part (4C). It is pressure water.

In the method of this embodiment, the semiconductor device which has been resin-sealed is
Laser beams (5a) and (sb) are irradiated as shown in figure (at). Next, burrs (5b) on the surfaces of the lead (2), tie bar (3), The area around the burr (4a) along (1) is removed, and the remaining part (4C) of the remaining burr IJ (4a) is sprayed with high pressure water (6) as shown in Figure 3 (bl). (c)
The structure is obtained.

Now, regarding the above problem, the laser beam (5a)
It is clear that the irradiation position in (5b) can be set at any arbitrary number.It is clear that the problem can be solved without causing a cost increase even when applied to the manufacture of semiconductor devices of high variety and low volume production.

In addition, in the above example, 2 high pressure water was used.

Other liquids such as high-pressure air, high-pressure fluids such as gases, etc. may also be used.

By the way, in the above embodiment, it was mentioned that the spraying of high-pressure fluid is also used.1 For example, if the width of the laser beam (5a) in FIG. 1(a) is made sufficiently large, it can be removed by laser irradiation alone. It is also possible.

〔Effect of the invention〕

In addition to the three points described above, this invention removes burrs by laser irradiation, so it can be applied to semiconductor devices produced in a wide variety of small quantities and has the effect of reducing production costs.

Another aspect of the present invention has the effect of further reducing production costs by removing burrs by laser irradiation and spraying of high-pressure fluid.

[Brief explanation of drawings]

gi (al, (b)), fcl are a series of sectional views showing one embodiment of the present invention, Fig. 2 is a partial perspective sectional view for explaining the conventional method of manufacturing a semiconductor device, and !g3 is a series of sectional views showing one embodiment of the present invention. It is a sectional view showing a modification of the invention. In the figure, C1) is the main body, (2) is the lead, (3) is the tie bar, (4) is the burr, (5a), and (sb) are all lasers. The beam (6) is a high pressure fluid. In each figure, the same reference numerals indicate the same or corresponding parts.

Claims (5)

[Claims] (1) A method for manufacturing a semiconductor device, comprising the steps of: sealing a lead frame with a resin; and removing burrs between and on the surfaces of the leads of the resin-sealed lead frame by laser irradiation. (2) The method for manufacturing a semiconductor device according to claim 1, characterized in that burrs on both the upper and lower surfaces of the lead are removed by separately irradiating laser beams. (3) A method for manufacturing a semiconductor device according to claim 1, characterized in that the burr between the leads is irradiated with a laser until it penetrates from one side to the other, and the burr is hollowed out and removed. (4) Step of sealing the lead frame with resin, and removing some of the burrs between the leads of the resin-sealed lead frame and on their surfaces by laser irradiation, and removing the remaining part by spraying high-pressure fluid. A method for manufacturing a semiconductor device, comprising the steps of: (5) Part of the burr between the leads and on their surface is removed by laser irradiation from one side, and the remaining part is removed by high-pressure spraying from the same direction. A method for manufacturing a semiconductor device according to section 1.