JPS62245205A - Thin film optical waveguide and its production - Google Patents
Thin film optical waveguide and its productionInfo
- Publication number
- JPS62245205A JPS62245205A JP8932086A JP8932086A JPS62245205A JP S62245205 A JPS62245205 A JP S62245205A JP 8932086 A JP8932086 A JP 8932086A JP 8932086 A JP8932086 A JP 8932086A JP S62245205 A JPS62245205 A JP S62245205A
- Authority
- JP
- Japan
- Prior art keywords
- film
- optical waveguide
- single crystal
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 75
- 229910052596 spinel Inorganic materials 0.000 claims description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- -1 magnesium aluminate Chemical class 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 208000019901 Anxiety disease Diseases 0.000 abstract 1
- 230000036506 anxiety Effects 0.000 abstract 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 9
- 239000000395 magnesium oxide Substances 0.000 description 5
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体層と、絶縁層からなり、半導体基板上に
形成することを可能にする薄膜光導波路及びその作製方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a thin film optical waveguide that is made up of a semiconductor layer and an insulating layer and can be formed on a semiconductor substrate, and a method for manufacturing the same.
（従来の技術）
電気的集積回路をより高密度化、高速度化する為に光集
積回路の研究が進められている。光集積回路を構成する
には導波路、及び導波光制御素子を必要とする。（Ｐｔ
）ｔ−ｘ Ｌａ、）（ＺｒｙＴｉＺ）１−Ｘ／４０３（
以下ＰＬＺＴと称す）に代表される一般構造式ＡＢＯ３
型のペロプスカイト酸化物は優れた電気光学効果を有し
、従来のＬｉＮｂＯ３に代わる導波路材料と期待されて
いる。ＰＬＺＴ薄膜を用いた導波光制御素子はたとえば
ナショナルテクニカルレボ−） （ＮａｔｉｏｎａｌＴ
ｅｃｈｎｉｃａｌ Ｒｅｐｏｒｔ）第２９巻６号９０頁
〜９９頁に報告されている。(Prior Art) Research into optical integrated circuits is being advanced in order to make electrical integrated circuits more dense and faster. To configure an optical integrated circuit, a waveguide and a waveguide light control element are required. (Pt
)t-x La,)(ZryTiZ)1-X/403(
General structural formula ABO3 represented by (hereinafter referred to as PLZT)
Perovskite oxides have excellent electro-optic effects and are expected to be a waveguide material that can replace traditional LiNbO3. A waveguide light control device using a PLZT thin film is available from, for example, National Technical Review.
29, No. 6, pp. 90-99.
（発明が解決しようとする問題点）
この場合、ＰＬＺＴ薄膜はサファイヤ基板上に形成され
ている。ＰＬＺＴ系のペロプスカイト酸化物薄膜の結晶
性は基板材料に大きく依存し、サファイヤ、マグネシア
、チタン酸ストロンチウム等の単結晶基板上にエピタキ
シャル成長することが知られている。しかしこれらの酸
化物単結晶基板は高価であり、大口径の単結晶基板を安
価に製造することは極めて困難である。また上記のＰＬ
ＺＴ導波光制御素子は、ＰＬＺＴ薄膜をサファイヤ基板
上にエピタキシャル成長した後、ＰＬＺＴ膜をプラズマ
エツチングしてリッチ型の導波路を作製しているが、プ
ラズマエツチングにおいては加工精度、ガスの混入、エ
ツチング時間等に問題が多い。さらに上記導波光制御素
子はＹＡＧレーザー光に対する伝播損失が５ｄＢ／ａｍ
と従来のＬｉＮｂＯ３結晶の０．２ｄＢ／ａｍに比べ１
０倍以上の値を示す。これはＰＬＺＴ膜の結晶性の問題
とともに、リッヂ型導波路の側壁部の形状の荒さによる
ものと考えられる。(Problems to be Solved by the Invention) In this case, the PLZT thin film is formed on a sapphire substrate. The crystallinity of a PLZT-based peropskite oxide thin film largely depends on the substrate material, and it is known that it is epitaxially grown on a single crystal substrate of sapphire, magnesia, strontium titanate, or the like. However, these oxide single crystal substrates are expensive, and it is extremely difficult to manufacture large diameter single crystal substrates at low cost. Also, the above PL
In the ZT waveguide optical control device, a rich type waveguide is fabricated by epitaxially growing a PLZT thin film on a sapphire substrate and then plasma etching the PLZT film. There are many problems with this. Furthermore, the waveguide light control element has a propagation loss of 5 dB/am for YAG laser light.
1 compared to 0.2 dB/am of conventional LiNbO3 crystal.
Indicates a value of 0 times or more. This is considered to be due to the problem of the crystallinity of the PLZT film as well as the rough shape of the side wall portion of the ridge-type waveguide.
本発明はこれらの問題を解決するための薄膜光導波路及
びその作製方法を提供するものである。The present invention provides a thin film optical waveguide and a method for manufacturing the same to solve these problems.
（問題点を解決するための手段）
シリコン単結晶基板上に絶縁体膜が形成され、該絶縁体
膜上にペロプスカイト型酸化物のエピタキシャル結晶膜
からなる光導波路領域と非晶質膜からなる領域とが形成
されていることを特徴とする薄膜光導波路。(Means for solving the problem) An insulating film is formed on a silicon single crystal substrate, and an optical waveguide region made of an epitaxial crystal film of perovskite type oxide and an amorphous film are formed on the insulating film. A thin film optical waveguide characterized in that a region is formed.
その作製方法として、シリコン単結晶基板上に絶縁体膜
を形成し、該絶縁体膜上に熱処理することによってペロ
プスカイト型酸化物とすべき非晶質膜を形成した後、該
非晶質膜の先導波路とすべき部分のみをレーザー光を用
いて局部的に加熱してエピタキシャル結晶膜とすること
を特徴とする薄膜光導波路の作製方法。As a manufacturing method, an insulating film is formed on a silicon single crystal substrate, an amorphous film to be made into a perovskite oxide is formed by heat treatment on the insulating film, and then the amorphous film is A method for manufacturing a thin film optical waveguide, characterized in that only a portion to be a leading waveguide is locally heated using a laser beam to form an epitaxial crystal film.
（作用）
本出願人はペロプスカイト型酸化物のエピタキシャル膜
を絶縁体エピタキシャル膜を介してシリコン単結晶上に
形成する方法を特開昭５９−１７３５８号公報において
提案しており、本発明はそれを先導波路およびその作製
法として更に発展応用したものである。即ち絶縁体エピ
タキシャル膜とシリコン単結晶からなる基板上に熱処理
することによってペロブスカイト型酸化物とすべき非晶
質膜を形成し非晶質膜にレーザー光を照射する。照射さ
れた部分は光を吸収して加熱されて結晶化し、しがも、
基板の絶縁体膜の結晶性を反映したエピタキシャル膜と
なる。また、結晶質部分と非晶質部分は屈折率が異なる
ので先導波路を作製できる。本発明の利点はレーザー光
により結晶化を行うので、導波路の形状精度がレーザー
光のビーム径を制御することによって高められ、しかも
照射時間は極めて短時間でもよく、前述のプラズマエツ
チングよりも導波路形成の精度、及びプロセスの簡略さ
において優れていることにある。また形状加工を必要と
しないので不純物の混入がなく構造的にも埋込み型導波
路となり、リッヂ型の場合に見られるような側壁荒れに
よる光伝播の損失を避けることができるという利点を有
する。またシリコン単結晶基板は大口径かつ安価であり
、サファイヤ基板を用いるよりもコストを大幅に下げる
ことができる。(Function) The present applicant has proposed a method of forming an epitaxial film of a perovskite type oxide on a silicon single crystal via an insulating epitaxial film in Japanese Patent Application Laid-open No. 17358/1983, and the present invention is directed to that method. This method has been further developed and applied as a leading waveguide and its manufacturing method. That is, an amorphous film to be made into a perovskite-type oxide is formed by heat-treating a substrate made of an insulator epitaxial film and a silicon single crystal, and a laser beam is irradiated onto the amorphous film. The irradiated area absorbs the light, heats up, and crystallizes.
This results in an epitaxial film that reflects the crystallinity of the insulator film on the substrate. Furthermore, since the crystalline portion and the amorphous portion have different refractive indexes, a guiding waveguide can be created. The advantage of the present invention is that since crystallization is performed using laser light, the shape accuracy of the waveguide can be improved by controlling the beam diameter of the laser light, and the irradiation time can be extremely short. It is superior in the accuracy of wave path formation and the simplicity of the process. In addition, since no shape processing is required, there is no contamination of impurities and the structure becomes a buried type waveguide, which has the advantage of avoiding optical propagation loss due to sidewall roughness as seen in the case of a ridge type. Furthermore, a silicon single crystal substrate has a large diameter and is inexpensive, and the cost can be significantly reduced compared to using a sapphire substrate.
以下実施例によって説明する。This will be explained below using examples.
（実施例１）
面方位が（１００）のＳｉ単結晶基板上にマグネシウム
アルミネートスピネルをエピタキシャル成長し、その上
にスパッタ法により（Ｐｂｌ−ｘＬａｘ）（ＺｒｙＴｌ
ｚ）ｉ −Ｘ／４ｏ３いわゆるＰＬＺＴの非晶質膜を形
成した。次にレーブー光を基板と垂直方向に、ＰＬＺＴ
非晶質膜側から照射し、非晶質膜を一部結晶化して先導
波路を形成した。第１図（ａ）、（ｂ）、（ｃ）は本実
施例の説明図で１は（１００）Ｓｉ単結晶基板、２は気
相成長法で成長したＭｇＡｌ２Ｏ４エピタキシャル膜、
３はスパッタ法で作製したＰＬＺＴの非晶質膜、４はレ
ーザーアニールによって形成したＰＬＺＴ単結晶膜であ
る。ＭｇＡｌ２Ｏ４の気相成長は本出願人がすでに提案
（特願昭５７−１３６０５１） Ｌ、ている方法で成長
した。すなわち反応ガスとしてＭｇＣｌ２．ＡＩにＭＣ
Ｉガスを反応させて生成したＡｌＣｌ３．ＣＯ２，Ｎ２
ガスを用い、キャリアガスとしてＮ２ガスを用いた。Ｍ
ｇＡｌ２Ｏ４の生成反応はＭｇＣｌ２＋２ＡＩＣ１３＋
４ＣＯ２＋ ４Ｈ２−ＭｇＡ１２０４ ＋ ４ＣＯ＋
８ＨＣ１で表わされる。成長温度９５０°Ｃで膜厚２
０００人成長し、Ｘ線回折及び電子線回折で（１００）
方位のＭｇＡｌ２Ｏ４がエピタキシャル成長しているこ
とを確認した。ＰＬＺＴ非晶質膜は高周波マグネトロン
スパッタリング法で作製した。ターゲットには（Ｐｂｘ
−ｘ Ｌａｘ）（Ｚｒｙ ’Ｔｈｚｈ −Ｘ／４０３
の組成（ｘ／ｙ／ｚ）が（９／６５／３５）のＰＬＺＴ
セラミックスを用い、Ａｒ −０２混合ガス中セ、基板
温度１５０°Ｃで行なった。膜厚は３０００Ａである。(Example 1) Magnesium aluminate spinel was epitaxially grown on a Si single crystal substrate with a plane orientation of (100), and (Pbl-xLax) (ZryTl) was grown on it by sputtering.
z) i -X/4o3 An amorphous film of so-called PLZT was formed. Next, the PLZT light is directed perpendicularly to the substrate.
Irradiation was performed from the amorphous film side to partially crystallize the amorphous film to form a leading waveguide. FIGS. 1(a), (b), and (c) are explanatory diagrams of this example, where 1 is a (100) Si single crystal substrate, 2 is an MgAl2O4 epitaxial film grown by vapor phase epitaxy,
3 is a PLZT amorphous film produced by sputtering, and 4 is a PLZT single crystal film formed by laser annealing. MgAl2O4 was grown in a vapor phase using a method already proposed by the applicant (Japanese Patent Application No. 136051/1982). That is, MgCl2. MC to AI
AlCl3. produced by reacting I gas. CO2, N2
N2 gas was used as the carrier gas. M
The production reaction of gAl2O4 is MgCl2+2AIC13+
4CO2+ 4H2-MgA1204 + 4CO+
It is represented by 8HC1. Film thickness 2 at growth temperature 950°C
000 people grew, and by X-ray diffraction and electron diffraction (100)
It was confirmed that MgAl2O4 was grown epitaxially in the same direction. The PLZT amorphous film was produced by high frequency magnetron sputtering method. The target is (Pbx
-x Lax) (Zry 'Thzh -X/403
PLZT whose composition (x/y/z) is (9/65/35)
The test was carried out using ceramics in an Ar-02 mixed gas at a substrate temperature of 150°C. The film thickness is 3000A.
Ｘ線回折によりこのＰＬＺＴ膜が非晶質膜であることを
確認した。次に非晶質膜側からレーザー光を照射し、上
記非晶質膜の一部を結晶化した。レーザー光としては波
長１．０６１１ｍのＹＡＧレーザーを用い、出力５Ｗ、
ビーム径２０ｐｍ走査速度２０ｍｍ／ｓｅｅの条件で行
った。It was confirmed by X-ray diffraction that this PLZT film was an amorphous film. Next, a laser beam was irradiated from the amorphous film side to crystallize a part of the amorphous film. A YAG laser with a wavelength of 1.0611 m was used as the laser beam, and the output was 5 W.
The experiment was carried out under the conditions of a beam diameter of 20 pm and a scanning speed of 20 mm/see.
ＹＡＧレーザー光を用いたのは、波長１．０６１１ｍの
光はＰＬＺＴ非晶質膜および絶縁体膜は透過し、Ｓｉ基
板のみに１吸収されるためである。すなわち、基板側が
加熱されてＰＬＺＴ非晶質膜の結晶化がＰＬＺＴ非晶質
膜と絶縁体エピタキシャル膜の界面から生じ、結晶化部
分がエピタキシャル成長する。電子線回折により、レー
ザー光により結晶化した部分がエピタキシャル成長して
いることを確認した。The reason why YAG laser light was used is that light with a wavelength of 1.0611 m is transmitted through the PLZT amorphous film and the insulating film, but is absorbed only by the Si substrate. That is, the substrate side is heated, crystallization of the PLZT amorphous film occurs from the interface between the PLZT amorphous film and the insulator epitaxial film, and the crystallized portion grows epitaxially. Electron beam diffraction confirmed that the portion crystallized by laser light was epitaxially grown.
このようにして形成した光導波路のＹＡＧレーザー光に
対する光の伝播損失を測定し、０．７ｄＢ／ａｍが得ら
れた。The propagation loss of the YAG laser beam of the optical waveguide thus formed was measured and was found to be 0.7 dB/am.
（実施例２）
（１００）Ｓｉ単結晶基板上にエピタキシャル成長した
ＭｇＡｌ２Ｏ４膜上に、更にＭｇＯエピタキシャル膜を
形成した基板を用いて実施例１と同じ工程で、ＰＬＺＴ
導波路を作製した。第２図（ａ）〜（ｄ）は本実施例に
よってなる導波路の製造プロセスを示す。Ｓｉ単結晶基
板１上にＭｇＡｌ２Ｏ４エピタキシャル膜２を形成しく
第２図（ａ））。さらにＭｇＯエピタキシャル膜５を形
成する（第２図（ｂ））。この上にＰＬＺＴ非晶質膜３
を形成しく第２図（Ｃ））、所定部分にレーザー光を照
射しＰＬＺＴエピタキシャル膜４を形成する（第２図（
ｄ））。このときのＹＡＧ光に対する光伝播損失は０．
５ｄＢ／ａｍであった。(Example 2) Using a substrate in which an MgO epitaxial film was further formed on a MgAl2O4 film epitaxially grown on a (100) Si single crystal substrate, PLZT
A waveguide was fabricated. FIGS. 2(a) to 2(d) show the manufacturing process of the waveguide according to this embodiment. A MgAl2O4 epitaxial film 2 is formed on a Si single crystal substrate 1 (FIG. 2(a)). Furthermore, an MgO epitaxial film 5 is formed (FIG. 2(b)). On top of this is a PLZT amorphous film 3.
2 (C)) and irradiates a predetermined portion with laser light to form a PLZT epitaxial film 4 (Fig. 2 (C)).
d)). At this time, the optical propagation loss for YAG light is 0.
It was 5 dB/am.
ＭｇＡ１□０４膜上に形成されたＭｇＯエピタキシャル
膜の単結晶性はＭｇＡｌ２Ｏ４膜の単結晶性より優れ、
ＭｇＯ膜のＸ線ロッキングカーブ半値幅はＭｇＡｌ２Ｏ
４膜の半値幅より１０％小さい値であった。The single crystallinity of the MgO epitaxial film formed on the MgA1□04 film is superior to that of the MgAl2O4 film,
The half-value width of the X-ray rocking curve of MgO film is MgAl2O
The value was 10% smaller than the half width of the 4 films.
（実施例３）
（１００）Ｓｉ単結晶基板上にエピタキシャル成長した
ＭｇＡｌ２Ｏ４膜を通しテＳｉ基板を熱酸化し、ＭｇＡ
ｌ２Ｏ４膜とＳｉ基板の間に５ｉ０２を形成した基板を
用いて実施例１と同じ工程でＰＬＺＴ導波路を作製した
。第３図（ａ）〜（ｄ）は本実施例からなる導波路の製
造プロセスを示す。Ｓｉ単結晶基板１上にＭｇＡｌ２Ｏ
４エピタキシャル膜２を形成しく第３図（ａ））、さら
に５ｉ０２熱酸化膜６を形成する（第３図（ｂ））。こ
の上にＰＬＺＴ非晶質膜３を形成しく第３図（Ｃ））、
所定部分にレーザー光を照射し、ＰＬＺＴエピタキシャ
ル膜４を形成する（第２図（ｄ））。このときのＹＡＧ
光に対する先伝播損失は０．３ｄＢ／ｃｍであった。上
記熱酸化の条件は１１００℃での水蒸気酸化である。熱
酸化によってＭｇＡｌ２Ｏ４の単結晶性は改善され、Ｘ
線ロッキングカーブの半値幅は３０％減少した。(Example 3) (100) The MgAl2O4 film epitaxially grown on the Si single crystal substrate was thermally oxidized, and the MgA
A PLZT waveguide was fabricated in the same process as in Example 1 using a substrate in which 5i02 was formed between the l2O4 film and the Si substrate. FIGS. 3(a) to 3(d) show the manufacturing process of the waveguide according to this embodiment. MgAl2O on Si single crystal substrate 1
A 4-epitaxial film 2 is formed (FIG. 3(a)), and a 5i02 thermal oxide film 6 is further formed (FIG. 3(b)). On top of this, a PLZT amorphous film 3 is formed (FIG. 3(C)).
A predetermined portion is irradiated with laser light to form a PLZT epitaxial film 4 (FIG. 2(d)). YAG at this time
The forward propagation loss for light was 0.3 dB/cm. The above thermal oxidation conditions are steam oxidation at 1100°C. The single crystallinity of MgAl2O4 is improved by thermal oxidation, and X
The half-width of the line rocking curve decreased by 30%.
（実施例４）
ＰＬＺＴの代わりにＰｂ（ＺｒＯ，５５ＴｉＯ，３５）
０３．ＰｂＴｉＯ３゜ＢａＴｉＯ３，Ｋ（Ｔａｇ、６５
Ｎｂ□、３５）０３を用いて実施例１と同じ工程でＭｇ
Ａ１２ｏ４エピタキシヤル膜が形成されたＳｉ基板上に
薄膜光導波路を作製した。第１表に示す如（、各材料を
用いた薄膜光導波路のＹＡＧレーザー光に対する伝播損
失はそれぞれ１．０ｄＢ／ｃｍ以下であり、第１表
（発明の効果）
このように本発明により作製した薄膜光導波路は、ＰＬ
ＺＴ導波路を例にとれば、ＹＡＧレーザー光に対する光
伝播損失は従来の方法による導波路よりも１折返（改善
されていることがわかる。さらに本発明においてはレー
ザー光による結晶化によって導波路を作製するものであ
り、従来のようにプラズマエツチングのように形状加工
をする必要がなく、不純物の混入の心配がなく、作業時
間を大幅に短縮できる。また、基板として大口径、かつ
高品質が得られるＳｉ半導体を用いることができるため
に、製造コストが低く、現在のＳｉ半導体プロセスに入
れることができ、電気光学素子として動作させるために
必要な駆動回路も同一基板上に形成することが可能で実
用的価値は極めて大きい。(Example 4) Pb(ZrO, 55TiO, 35) instead of PLZT
03. PbTiO3゜BaTiO3,K (Tag, 65
Mg in the same process as in Example 1 using Nb□, 35)
A thin film optical waveguide was fabricated on a Si substrate on which an A12o4 epitaxial film was formed. As shown in Table 1, the propagation loss for YAG laser light of the thin film optical waveguide using each material is 1.0 dB/cm or less. Thin film optical waveguide is PL
Taking the ZT waveguide as an example, it can be seen that the optical propagation loss for YAG laser light is improved by one fold (1 turn) compared to the waveguide made by the conventional method.Furthermore, in the present invention, the waveguide is There is no need for shape processing such as conventional plasma etching, there is no need to worry about contamination with impurities, and the work time can be significantly shortened.In addition, the substrate can be made with a large diameter and high quality. Since the obtained Si semiconductor can be used, the manufacturing cost is low, it can be incorporated into the current Si semiconductor process, and the drive circuit necessary to operate as an electro-optical element can also be formed on the same substrate. The practical value is extremely large.
第１〜３図は本発明による導波路の製造プロセスを示す
図。
図において、
１・・・Ｓｉ単結晶基板 ２・・・ＭｇＡｌ２Ｏ４エピ
タキシャル膜３・・・ＰＬＺＴ非晶質膜４・・−ＰＬＺ
Ｔエピタキシャル膜レーザし死
亭 ２ 面1 to 3 are diagrams showing the manufacturing process of a waveguide according to the present invention. In the figure, 1...Si single crystal substrate 2...MgAl2O4 epitaxial film 3...PLZT amorphous film 4...-PLZ
T epitaxial film laser 2nd side
Claims (6)
絶縁体膜上にペロブスカイト型酸化物の結晶膜からなる
光導波路と非晶質膜からなる領域が形成されていること
を特徴とする薄膜光導波路。(1) An insulating film is formed on a silicon single crystal substrate, and an optical waveguide made of a perovskite oxide crystal film and a region made of an amorphous film are formed on the insulating film. Thin film optical waveguide.
がＡＢＯ＿３の一般式で表わされ、ＡとしてＰｂ、Ｂａ
、Ｋ及び希土類元素の群から選ばれる一種以上の元素、
ＢとしてＴｉ、Ｚｒ、Ｔａ及びＮｂの群から選ばれる一
種以上の元素からなることを特徴とする特許請求の範囲
第１項記載の薄膜光導波路。(2) The perovskite oxide formed on the insulator film is represented by the general formula ABO_3, where A is Pb, Ba
, K and one or more elements selected from the group of rare earth elements,
2. The thin film optical waveguide according to claim 1, wherein B comprises one or more elements selected from the group of Ti, Zr, Ta, and Nb.
グネシウムアルミネートスピネル（ＭｇＡｌ＿２Ｏ＿４
）膜であることを特徴とする特許請求の範囲第１項また
は第２項記載の薄膜光導波路。(3) The insulator film formed on the silicon single crystal substrate is magnesium aluminate spinel (MgAl_2O_4
) The thin film optical waveguide according to claim 1 or 2, wherein the thin film optical waveguide is a film.
グネシウムアルミネートスピネル（ＭｇＡｌ＿２Ｏ＿４
）膜と、さらにその上に形成されるマグネシア（ＭｇＯ
）膜であることを特徴とする特許請求の範囲第１項また
は第２項記載の薄膜光導波路。(4) The insulator film formed on the silicon single crystal substrate is magnesium aluminate spinel (MgAl_2O_4
) film and the magnesia (MgO) film formed on it.
) The thin film optical waveguide according to claim 1 or 2, wherein the thin film optical waveguide is a film.
シリコン基板表面に形成される二酸化シリコン（ＳｉＯ
＿２）層と、この上に形成される絶縁体膜とからなるこ
とを特徴とする特許請求の範囲第１項または第２項記載
の薄膜光導波路。(5) The insulator film formed on the silicon single crystal substrate is
_2) The thin film optical waveguide according to claim 1 or 2, comprising a layer and an insulating film formed thereon.
縁体膜上に非晶質膜を形成した後、該非晶質膜の所定の
部分のみにレーザー光を照射し、エピタキシャル結晶膜
とすることを特徴とする薄膜光導波路の作製方法。(6) After forming an insulating film on a silicon single crystal substrate and forming an amorphous film on the insulating film, only a predetermined portion of the amorphous film is irradiated with a laser beam to form an epitaxial crystal film. A method for manufacturing a thin film optical waveguide, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8932086A JPS62245205A (en) | 1986-04-17 | 1986-04-17 | Thin film optical waveguide and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8932086A JPS62245205A (en) | 1986-04-17 | 1986-04-17 | Thin film optical waveguide and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62245205A true JPS62245205A (en) | 1987-10-26 |
Family
ID=13967374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8932086A Pending JPS62245205A (en) | 1986-04-17 | 1986-04-17 | Thin film optical waveguide and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62245205A (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002073254A1 (en) * | 2001-03-09 | 2002-09-19 | Corning Incorporated | Laser-induced crystallization of transparent glass-ceramics |
| WO2002009148A3 (en) * | 2000-07-24 | 2003-07-31 | Motorola Inc | Integrated radiation emitting system and process for fabricating same |
| WO2002027362A3 (en) * | 2000-09-26 | 2003-07-31 | Motorola Inc | Electro-optic structure and process for fabricating same |
| US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| WO2024172075A1 (en) * | 2023-02-14 | 2024-08-22 | 国立大学法人九州大学 | Structure, waveguide, light modulator, and structure production method |
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|---|---|---|---|---|
| JPS5944004A (en) * | 1982-09-06 | 1984-03-12 | Matsushita Electric Ind Co Ltd | Substrate for thin-film optical circuit |
| JPS60161635A (en) * | 1984-02-02 | 1985-08-23 | Nec Corp | Substrate for electronic device |
| JPS60191207A (en) * | 1984-03-12 | 1985-09-28 | Matsushita Electric Ind Co Ltd | Optical waveguide element |
-
1986
- 1986-04-17 JP JP8932086A patent/JPS62245205A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944004A (en) * | 1982-09-06 | 1984-03-12 | Matsushita Electric Ind Co Ltd | Substrate for thin-film optical circuit |
| JPS60161635A (en) * | 1984-02-02 | 1985-08-23 | Nec Corp | Substrate for electronic device |
| JPS60191207A (en) * | 1984-03-12 | 1985-09-28 | Matsushita Electric Ind Co Ltd | Optical waveguide element |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| WO2002009148A3 (en) * | 2000-07-24 | 2003-07-31 | Motorola Inc | Integrated radiation emitting system and process for fabricating same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| WO2002027362A3 (en) * | 2000-09-26 | 2003-07-31 | Motorola Inc | Electro-optic structure and process for fabricating same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| WO2002073254A1 (en) * | 2001-03-09 | 2002-09-19 | Corning Incorporated | Laser-induced crystallization of transparent glass-ceramics |
| US6928224B2 (en) * | 2001-03-09 | 2005-08-09 | Corning Incorporated | Laser-induced crystallization of transparent glass-ceramics |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| WO2024172075A1 (en) * | 2023-02-14 | 2024-08-22 | 国立大学法人九州大学 | Structure, waveguide, light modulator, and structure production method |
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