JPS62242788A - Baking vessel - Google Patents
Baking vesselInfo
- Publication number
- JPS62242788A JPS62242788A JP61084381A JP8438186A JPS62242788A JP S62242788 A JPS62242788 A JP S62242788A JP 61084381 A JP61084381 A JP 61084381A JP 8438186 A JP8438186 A JP 8438186A JP S62242788 A JPS62242788 A JP S62242788A
- Authority
- JP
- Japan
- Prior art keywords
- firing
- firing container
- silicon carbide
- fired
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Containers Having Bodies Formed In One Piece (AREA)
- Furnace Charging Or Discharging (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
、・ のI
この発明はフェライト、コンデンサ、螢光体粉末等の電
子工業部品を焼成する際に使用する焼成容器の改良に関
するものである。DETAILED DESCRIPTION OF THE INVENTION This invention relates to an improvement in a firing container used for firing electronic industrial parts such as ferrite, capacitors, and phosphor powders.
WJL臥炎1
従来、フェライI−、コンデンサ、螢光体粉末等の電子
工業部品を熱処理する場合、一般に焼成容器を用いてい
た。焼成容器の内部に被焼成物を載せて、たとえば12
00〜1400℃の高温で被焼成物を熱処理していた。WJL Flame 1 Conventionally, when electronic industry parts such as Ferrite I-, capacitors, and phosphor powders are heat-treated, a firing vessel has generally been used. Place the object to be fired inside the firing container, for example 12
The object to be fired was heat-treated at a high temperature of 00 to 1400°C.
そのような焼成容器の材料は石英ガラスが一般的であっ
た。The material for such firing containers was generally quartz glass.
′ し と る −
しかしながら、石英ガラスは、たとえば螢光体などを焼
成する時に出るハロゲンガスにより失透する欠点があっ
た。そのため、石英ガラス製の焼成容器は10〜20回
の使用が限度であった。However, quartz glass has the disadvantage that it devitrifies due to the halogen gas released when firing fluorescent materials. Therefore, the firing container made of quartz glass can only be used 10 to 20 times.
このため、Si 3 N4 Bonded 3i
C質の焼成容器や、再結晶質SiC製の焼成容器が使用
されるようになってさた。しかしながら、Si 3 N
4 3onded St C質の焼成容器は、純度的
に問題がある上に、酸化し易く、しかも酸化により生成
したSiO2相や、それ自体に含まれるガラス相が原因
となつて、クリープ変形や割れが発生しがちであった。Therefore, Si 3 N4 Bonded 3i
Firing containers made of carbon and recrystallized SiC have come into use. However, Si 3 N
4 3onded St C firing containers not only have purity problems, but also easily oxidize, and are susceptible to creep deformation and cracking due to the SiO2 phase generated by oxidation and the glass phase contained within itself. tended to occur.
また、純度的に高い再結晶質SiC製の焼成容器は、製
造上、気孔が15〜20%も存在し、その気孔を通して
酸化性ガスが組織内に入り込み、炭化珪素自体の酸化が
進行し、3i 3 N4[3onded si Cと
同様にクリープ変形や割れが発生しがちであった。さら
に、Sl 3 N4 3onded Si Cなどは
熱伝導率が小さく、被焼成物の均一加熱処理に問題が生
じ、焼成時の歩留低下の一大要因であった。In addition, due to the manufacturing process, a firing container made of recrystallized SiC with high purity has 15 to 20% pores, and oxidizing gases enter the structure through the pores, causing oxidation of the silicon carbide itself. Similar to 3i 3 N4 [3onded si C], creep deformation and cracking tended to occur. Furthermore, materials such as Sl 3 N 4 3onded Si C have low thermal conductivity, which causes problems in uniform heat treatment of objects to be fired, and is a major factor in reducing yield during firing.
Uへ月〕i
この発明は前述のような従来技術の欠点を解消して、使
用中のクリープ変形や割れ、および均一加熱に対する対
策を施した焼成容器を提供することを目的としている。The object of the present invention is to eliminate the drawbacks of the prior art as described above, and to provide a firing container that takes measures against creep deformation, cracking, and uniform heating during use.
RJLプJLL
前述の目的を達成するために、この発明はフェライト、
コンデンサ、螢光体粉末等の電子工業部品を焼成する際
に使用する焼成容器において、焼成容器が炭化珪素およ
びアルミ(1! )系またはホウ素(B)系の焼結助剤
による結合組織を有することを特徴とする焼成容器を要
旨としている。RJL PJLL In order to achieve the above-mentioned object, this invention uses ferrite,
In a firing container used for firing electronic industrial parts such as capacitors and phosphor powders, the firing container has a connective tissue made of silicon carbide and an aluminum (1!)-based or boron (B)-based sintering aid. The gist is a firing container that is characterized by:
8 を ゛ るた の−
各種の電子工業部品を焼成する際に使用する焼成容器で
あって、炭化珪素およびアルミ(AQ )系またはホウ
素(B)系の焼結助剤による結合組織を右する゛。好ま
しくは、その焼成容器の通気率は3.7X 100−3
Cm Q/c m23ecCm (水中)以下とする
。ちなみに、従来の再結晶質炭化珪素製の焼成容器は通
気率が7 x 10−3 (、+ ta Q /c m
23cccm程度である。8 - A firing container used when firing various electronic industrial parts, which creates a connective tissue using silicon carbide and aluminum (AQ)-based or boron (B)-based sintering aids.゛. Preferably, the firing vessel has an air permeability of 3.7X 100-3
Cm Q/c m23ecCm (underwater) or less. By the way, a conventional firing container made of recrystallized silicon carbide has an air permeability of 7 x 10-3 (, + ta Q /cm
It is about 23cccm.
さて、炭化珪素および前述の焼結助剤による結合組織に
する理由について説明すると、従来技術の問題点は要す
るに酸化により生成したガラス相またはそれ自体に含ま
れるガラス相5iOzにJ:り変形が発生したり、それ
が原因で割れ現象が生じたりしていたことにある。また
、石英ガラスの場合には、失透の問題が生じていたので
ある。Now, to explain the reason for creating a connective structure using silicon carbide and the sintering aid mentioned above, the problem with the conventional technology is that J: deformation occurs in the glass phase generated by oxidation or the glass phase 5iOz contained in itself. This may have caused cracking phenomena. Furthermore, in the case of quartz glass, there was a problem of devitrification.
そこで、この発明は、炭化珪素に特定の焼結助剤を加え
て緻密な炭化珪素質のもの、いわゆる自焼結炭化珪素体
をつくり、それを各種の電子工業部品に適用し、顕茗な
効果を奏するものである。Therefore, this invention creates a dense silicon carbide substance, a so-called self-sintering silicon carbide body, by adding a specific sintering aid to silicon carbide, and applies it to various electronic industry parts to achieve remarkable results. It is effective.
炭化珪素および前述のごとき特定の焼結助剤による自焼
結体にすることにより、ガラス相の介在しない緻密な結
合組織を得て、それによりクリープ変形を防止するばか
りでなく、割れ現象も防止しようとするのである。By creating a self-sintered body using silicon carbide and the specific sintering aid mentioned above, a dense connective structure without a glass phase is obtained, which not only prevents creep deformation but also cracking phenomena. I'm trying to do that.
尖遣JLL
SiC粉末961昂部と、焼結助剤として84C1重量
部と、カーボン源としてカーボンブラック3重量部とを
混合し、水を分散媒として鋳込み用スリップを作った。A slip for casting was prepared by mixing 961 parts of Chisashi JLL SiC powder, 1 part by weight of 84C as a sintering aid, and 3 parts by weight of carbon black as a carbon source, and using water as a dispersion medium.
また、解膠剤としてNa 2 Si 03を外重量部で
0゜3%添加した。このようなスリップを型に流し込み
、成形してから脱型し、しかる後、不活性雰囲気(たと
えばアルゴンガス)中で2180℃にて焼結し、縦28
0 m+a、横2801、高さ1401の焼成容器を得
た。Further, Na 2 Si 03 was added as a deflocculant in an amount of 0.3% by weight. Such a slip is poured into a mold, shaped, demolded, and then sintered at 2180°C in an inert atmosphere (e.g. argon gas) to form a vertical
A firing container measuring 0 m+a, width 2801, and height 1401 was obtained.
他方、比較実験のために前述の焼成容器と同一形状で同
一寸法の他の材質の焼成容器も作成した。On the other hand, for a comparative experiment, a firing container having the same shape and dimensions as the above-mentioned firing container was also made of another material.
そのような各種の焼成容器の実験結果を表1に示す。Table 1 shows the experimental results of various such firing containers.
表1における実験条件を説明すれば、焼成温度が120
0℃で、連続プッシャー類で15時間/回のサイクルで
行ない、雰囲気は酸化性雰囲気(例えばΔir)にし、
被焼成物はハロリン酸系螢光体粉末であった。表に示し
た耐用回数は5個の焼成容器の平均耐用回数である。To explain the experimental conditions in Table 1, the firing temperature was 120
The process was carried out at 0°C using a continuous pusher in cycles of 15 hours/time, and the atmosphere was an oxidizing atmosphere (for example, ∆ir).
The material to be fired was a halophosphoric acid phosphor powder. The service life shown in the table is the average service life of five firing containers.
欠ffi
実施例1と同様の条件で試作した焼成容器と、他の材質
で作った焼成容器との被焼成物の収率(歩留り)を比較
実験した。その比較実験の結果が表2に示されている。An experiment was conducted to compare the yield of the fired material between a firing container prototyped under the same conditions as in Example 1 and a firing container made of other materials. The results of the comparative experiment are shown in Table 2.
表2における歩留りの数値は1容器当り50回実験した
ときの平均値である。The yield values in Table 2 are the average values obtained from 50 experiments per container.
表2から明らかなように、この発明による焼成容器を用
いると、被焼成物の歩留りが大1】に向上されることが
認められた。As is clear from Table 2, it was found that when the firing container according to the present invention was used, the yield of the fired products was improved by 1].
このように被焼成物の歩留りの向上について検討してみ
るに、従来の焼成容器のように熱伝導率が悪い場合には
、被焼成物の中心部が焼成不足となりがちであり、その
ために歩留りが低下していたと考えられる。これに対し
、本発明においてはアルミ系やホウ素系の焼結助剤を用
いているため、焼成容器の熱伝導率が65W/m″にで
、非常に良好であり、被焼成物が全体的に有効に焼成さ
れやすい。When considering how to improve the yield of the object to be fired in this way, we found that if the thermal conductivity is poor, such as in conventional firing containers, the center of the object tends to be underfired, and as a result, the yield decreases. is thought to have decreased. On the other hand, in the present invention, since an aluminum-based or boron-based sintering aid is used, the thermal conductivity of the firing container is 65 W/m'', which is very good, and the entire object to be fired is It is easy to be fired effectively.
従来のSi 3 N4 Bonded Si C(
D熱伝導率は18W/m’にであり、再結晶質SiCの
ものは30W/Ill″にであり、この発明による焼成
容器は約2〜3倍の熱伝導率を有するのである。このた
め、被焼成物の焼成ムラが回避出来、それが歩留りの大
巾改善となったものである。Conventional Si 3 N 4 Bonded Si C (
The thermal conductivity of D is 18 W/m', and that of recrystallized SiC is 30 W/Ill'', and the firing vessel according to the present invention has a thermal conductivity of about 2 to 3 times. , it was possible to avoid uneven firing of the object to be fired, which resulted in a significant improvement in yield.
表1
品種 耐用回数 備考
Si 3 N4 Bonded Si C103’)’
) −7変形・1ilJtL再結晶質Si C386割
れ
本発明品 1220 割れ
表2Table 1 Type Durability Remarks Si 3 N4 Bonded Si C103')'
) -7 Deformation/1ilJtL Recrystallized Si C386 Cracking Invention Product 1220 Cracking Table 2
Claims (1)
、焼成容器が炭化珪素およびアルミ(Al)系またはホ
ウ素(B)系の焼結助剤による結合組織を有することを
特徴とする焼成容器。[Claims] A firing container used for firing electronic industrial parts such as ferrite, capacitors, and phosphor powder, wherein the firing container is made of silicon carbide and aluminum (Al)-based or boron (B)-based sintered material. A firing container characterized by having a connective tissue formed by an auxiliary agent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61084381A JPS62242788A (en) | 1986-04-14 | 1986-04-14 | Baking vessel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61084381A JPS62242788A (en) | 1986-04-14 | 1986-04-14 | Baking vessel |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62242788A true JPS62242788A (en) | 1987-10-23 |
Family
ID=13828972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61084381A Pending JPS62242788A (en) | 1986-04-14 | 1986-04-14 | Baking vessel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62242788A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105523765A (en) * | 2014-11-27 | 2016-04-27 | 比亚迪股份有限公司 | Porous SiC prefabricated product, its preparation method and ceramic-metal composite material |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5017409A (en) * | 1973-06-15 | 1975-02-24 | ||
JPS5857392A (en) * | 1981-10-02 | 1983-04-05 | Sanraku Inc | Phosphoric acid ester of novel antibiotic substance oa-6129 and its preparation |
JPS6046972A (en) * | 1983-08-23 | 1985-03-14 | 日立化成工業株式会社 | Manufacture of silicon carbide sintered body |
-
1986
- 1986-04-14 JP JP61084381A patent/JPS62242788A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5017409A (en) * | 1973-06-15 | 1975-02-24 | ||
JPS5857392A (en) * | 1981-10-02 | 1983-04-05 | Sanraku Inc | Phosphoric acid ester of novel antibiotic substance oa-6129 and its preparation |
JPS6046972A (en) * | 1983-08-23 | 1985-03-14 | 日立化成工業株式会社 | Manufacture of silicon carbide sintered body |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105523765A (en) * | 2014-11-27 | 2016-04-27 | 比亚迪股份有限公司 | Porous SiC prefabricated product, its preparation method and ceramic-metal composite material |
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