JPS62230043A - Semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Industrial application field] 2F-induced EiA is a dynamic R
Regarding the induced gm configuration of an AM gain cell.

[Gist of invention]

The present invention relates to a semiconductor device, and is characterized in that in a dynamic RAM gain cell, a dielectric pattern containing titanium oxide is formed on at least the gate electrode of a sense transistor.

[Conventional technology]

Conventionally, dynamic RAM gain and
It was a general rule to use a silicon oxide film as an 11 body film on the gate separation of the sense transistor in the cell.

[Problem that the invention seeks to solve]

However, according to the above-mentioned prior art, when a dielectric silicon film is used as a diluent film, the dielectric constant is as small as S9. There was a problem with I'C1ff that dielectric breakdown was likely to occur.

Does the present invention address such problems in the prior art? It is an object of the present invention to provide a material structure in which a large capacity can be obtained by thickening the dielectric film on the gate edge of a sense transistor in a dynamic RAM gain cell.

[Means for solving the 7d point for 1] In order to solve the above problem 4e, the 4th invention provides an IA in a semiconductor device and a dynamic RAM gain cell.
Measures are taken to form a dielectric film containing modified titanium at least on the gate electrode of the sense transistor.

[Effect]

The dielectric constant of titanium oxide film is 100 to 400, which is about two orders of magnitude higher than the dielectric constant of 459, which is the dielectric constant of oxidized noricon film.
In response to the same question, it is possible to increase the thickness of the dielectric film, which in turn makes it difficult for absolute failure to occur.

[Real leprosy row]

Hereinafter, the present invention will be explained in detail with reference to examples.

Figure 1 shows a dynamic RAM that shows the MA array of the present invention.
The cross-sectional view of the gain cell, FIG. 42, is the electrically equivalent circuit of FIG. That is, a sense transistor consisting of a field oxide film 2, a gate oxide film (1) 3, etc. is formed on the surface of S11, and a gate oxide film is formed on the 7 silicon film, which also forms the top 1 of the gate of the sense transistor. Membrane (2
) 5, 5OI (80, 1conon In5clator) consisting of gate polarization which becomes the write word line 8
)) A transistor 4 is formed, and a titanium silicide film, etc. is formed on the gate 11 of the nG sensing transistor, and titanium oxide 6 is formed on top of it in a multilayer structure with silicon oxide. An electrode for the protruding word line 9 is formed thereon, and an electrode for the protruding focus edge 10 is formed via the interlayer insulating film 7.

〔Effect of the invention〕

Q mentioned above, regarding semiconductor devices, dynamic RA
In the M gain cell, by forming a dielectric layer 14 containing titanium oxide on at least the gate electrode of the sense transistor, it is possible to obtain a capacitor with high resistance to voltage.

[Brief explanation of drawings]

υノ@1 v,,ia An embodiment of the present invention? 1 is a cross-sectional view of a dynamic RAM gain cell shown in FIG. Z field oxide film gate oxide film (1) 4.8OI) transistor & gate oxide film (2) & titanium monoxide 7, 7-intermediate rim film a -1 incoming word line 9, 4 outgoing word line 10 , 4 write bit line 11, gate '11 pole 12, read bit line 15 sense transistor 14, '4 source O Applicant: Seiko Epson Corporation Figure 1 (phantom Figure 1 (b)

Claims (1)

[Claims] A semiconductor device in a dynamic RAM gain cell, characterized in that a dielectric film containing titanium oxide is formed at least on the gate electrode of a sense transistor.