JPS62229722A - Thin film insulator structure - Google Patents
Thin film insulator structureInfo
- Publication number
- JPS62229722A JPS62229722A JP7390486A JP7390486A JPS62229722A JP S62229722 A JPS62229722 A JP S62229722A JP 7390486 A JP7390486 A JP 7390486A JP 7390486 A JP7390486 A JP 7390486A JP S62229722 A JPS62229722 A JP S62229722A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- aromatic
- conductive member
- polyimide
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 87
- 239000012212 insulator Substances 0.000 title claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 34
- 229920001721 polyimide Polymers 0.000 claims description 31
- 239000004642 Polyimide Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 11
- 229920005575 poly(amic acid) Polymers 0.000 claims description 6
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 241001062872 Cleyera japonica Species 0.000 description 1
- BLAKAEFIFWAFGH-UHFFFAOYSA-N acetyl acetate;pyridine Chemical compound C1=CC=NC=C1.CC(=O)OC(C)=O BLAKAEFIFWAFGH-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- -1 dimethylhexadecyl Chemical group 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- NHLUVTZJQOJKCC-UHFFFAOYSA-N n,n-dimethylhexadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCN(C)C NHLUVTZJQOJKCC-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
- Insulating Of Coils (AREA)
- Formation Of Insulating Films (AREA)
- Organic Insulating Materials (AREA)
- Insulating Bodies (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は集積回路、抵抗、コンデンサ、コイル若しくは
各種電子部品等の導電性部材の絶縁処理技術の改良に関
し、例えば、ラングミュア・ブロジェット法（以下単に
「ＬＢ法」という）によって形成された芳香族＃膜を導
電性部材上に被着して絶縁処理を行なう薄膜絶縁体の構
造の技術に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to improvements in insulation processing technology for conductive members such as integrated circuits, resistors, capacitors, coils, and various electronic components, such as the Langmuir-Blodgett method (hereinafter simply referred to as This invention relates to a technology for the structure of a thin film insulator in which an aromatic film formed by the "LB method" is deposited on a conductive member to perform insulation treatment.
従来の技術
従来の絶縁処理の技術としては、例えば、特公昭５４−
２４１０５号に開示された混成集積回路基板の技術があ
る。Conventional technology Conventional insulation treatment technology includes, for example,
There is a hybrid integrated circuit board technology disclosed in Japanese Patent No. 24105.
この技術は混成集積回路基板の放熱等の改良に関する技
術であるが、導電性部材である金属基板の絶縁処理は次
のように行なわれていた。This technique is related to improving the heat dissipation of hybrid integrated circuit boards, and the insulation treatment of the metal substrate, which is a conductive member, was performed as follows.
すなわち、金属基板にはアルミニウム（Ａｔ）基板を用
い、絶縁薄層には前記アルミニウム基板表面を陽極酸化
することによって形成されたアルミナ（Ａｚ２０３）膜
を用いることによって金属基板の絶縁処理を行なってい
た。That is, the metal substrate is insulated by using an aluminum (At) substrate as the metal substrate, and using an alumina (Az203) film formed by anodizing the surface of the aluminum substrate as the insulating thin layer. .
又、他の絶縁処理技術としては酸化ケイ素（ｓｉｏ２）
のような無機絶縁物質や他の有機絶縁物質を用いて、ス
パッタリング等の蒸着技術により導電性部材に絶縁薄層
を形成するものがあった。In addition, as another insulation treatment technology, silicon oxide (SIO2)
There have been some methods in which an insulating thin layer is formed on a conductive member using an inorganic insulating material such as or another organic insulating material by a vapor deposition technique such as sputtering.
その他藩膜によらない絶縁処理技術としては、印刷技術
を用いた絶縁材の塗布や、絶縁シートの貼着によるもの
等があった。Other insulation processing techniques that did not involve membranes included applying insulation materials using printing technology and pasting insulation sheets.
本発明が解決しようとする問題点
上記のごとき従来の技術が現在知られている絶縁処理に
関する技術であるが、今後予想される集積回路等の高密
度集積化にとって前記した従来の技術では障害となり、
又多くの克服すべき問題点を有していた。この問題点の
いくつかを次に列挙する。Problems to be Solved by the Present Invention Although the above-mentioned conventional techniques are currently known techniques related to insulation processing, the conventional techniques described above pose an obstacle to the high-density integration of integrated circuits, etc., which is expected in the future. ,
It also had many problems that needed to be overcome. Some of these problems are listed below.
（ａｌ 絶縁層表面に凹凸が生じ、絶、縁層上への回
路形成等に際し品質の不安定さを惹起し易い。(Al) Unevenness occurs on the surface of the insulating layer, which tends to cause instability in quality when forming circuits on the insulating layer.
この問題は、高密度集積化の時回路を微細構造にすれば
するほど顕著な影響を受ける。前記した特公昭５４−２
４１０５号に開示した技術によれば、アルミナ膜表面の
凹凸は樹脂を薄く塗布して絶縁薄層表面を平担にする旨
説明されているが、微細構造において樹脂を薄く塗布す
る技術は極めて困難である。そして、樹脂を薄く塗布す
る構造を考えた場合、絶縁層の厚さが増し、更には複雑
な工程を加える必要性が懸念され、非実用的なものとな
る。This problem becomes more pronounced as the circuit becomes finer in structure during high-density integration. The above-mentioned special public service No. 54-2
According to the technology disclosed in No. 4105, it is explained that unevenness on the surface of the alumina film is made flat by applying a thin layer of resin to the surface of the insulating thin layer, but the technique of applying a thin layer of resin due to the fine structure is extremely difficult. It is. If a structure in which a resin is applied thinly is considered, the thickness of the insulating layer will increase, and furthermore, there is a concern that it will be necessary to add a complicated process, making it impractical.
（ｂ） 又、絶縁層はそれを形成する材質若しくは物
性的構造等に起因した絶縁耐圧を有しており、例えば、
アルミナ（Ａｚ、Ｏｓ）では絶縁耐圧Ｅは２°×１０’
（Ｖ／ｅ＋ａ）前後、酸化’ｙイ素（Ｓｉｎ、）では
絶縁耐圧Ｅは８ｘ１０’（Ｖ／ｃｍ）前後であることが
知られている。すなわち、絶縁層の厚さはこの絶縁耐圧
に応じた厚さ以下に薄くすることができないことは自明
のことであり、絶縁層の一部分でもこの許容される厚さ
以下に薄い部分があると、この部分からアバランシェ（
Ａｖａｌａｎｃｈθ）効果等により急激なキャリアの流
れを誘発して絶縁破壊に至らしめることとなる。(b) In addition, the insulating layer has a dielectric strength voltage due to the material forming it or the physical structure, etc., for example,
For alumina (Az, Os), the dielectric strength E is 2°×10'
(V/e+a), and it is known that the dielectric strength E of 'y oxide (Sin) is around 8x10' (V/cm). In other words, it is obvious that the thickness of the insulating layer cannot be made thinner than the thickness corresponding to this dielectric strength voltage, and if even a part of the insulating layer is thinner than this allowable thickness, From this part, avalanche (
Avalanche θ) effect or the like induces a rapid flow of carriers, leading to dielectric breakdown.
したがって、絶縁層の厚さは絶縁層表面の凹部基漁に設
定する必要があり、製造ばらつきを加味した余裕をもっ
た厚さにする必要があった。このことは、前記同様微細
構造にとって不利なことである。Therefore, it is necessary to set the thickness of the insulating layer based on the concave portion on the surface of the insulating layer, and it is necessary to set the thickness to a thickness that takes into account manufacturing variations. This is disadvantageous for the fine structure as described above.
ちなみに、集積回路等に使われ、従来絶縁用として最も
すぐれた材料の１つとされていた酸化ケイ素（ｓｉｏ、
）の場合でも、少くとも数千〔へ〇〕以上の厚さを確保
する必要があった。By the way, silicon oxide (SIO,
), it was necessary to ensure a thickness of at least several thousand [to 〇] or more.
問題点を解決するための手段
本発明は上記した諸問題を解消するもので、次に述べる
技術を提供するものである。Means for Solving the Problems The present invention solves the above-mentioned problems and provides the following technology.
すなわち、本発明は導電性部材上に形成された芳香族薄
膜を被着してなる薄膜絶縁体の構造を提供し、前記芳香
族薄膜は例えば単分子膜からなり、前記芳香族薄膜は、
各分子の疎水性端部が一方の面をなし、親水性端部が他
方の面をなす配列構造を形成した１分子鎖分の厚みを有
する薄膜であり、該芳香族薄膜を導電性部材上に少くと
も一層被着する構成をなした薄膜絶縁体の構造を提供す
るものである。That is, the present invention provides a structure of a thin film insulator formed by depositing an aromatic thin film formed on a conductive member, the aromatic thin film being made of, for example, a monomolecular film, and the aromatic thin film comprising:
It is a thin film with a thickness of one molecule chain that forms an array structure in which the hydrophobic end of each molecule forms one side and the hydrophilic end forms the other side, and the aromatic thin film is placed on a conductive member. The present invention provides a thin film insulator structure configured to deposit at least one layer on the substrate.
又、本発明は前記芳香族薄膜が、ポリアミド酸をイミド
化することによって形成されたポリイミド薄膜からなる
薄膜絶縁体の構造を提供するものであり、又前記導電性
部材が少くとも芳香族薄膜が被着される面に酸化膜層を
形成したものである薄膜絶縁体の構造を提供するもので
ある。Further, the present invention provides a structure of a thin film insulator in which the aromatic thin film is made of a polyimide thin film formed by imidizing polyamic acid, and the conductive member is made of at least an aromatic thin film. It provides a thin film insulator structure with an oxide layer formed on the surface to be deposited.
又、本発明は前記導電性部材及び芳香族薄膜が互いに重
合構造をなした薄膜絶縁体の構造を提供し、前記芳香族
薄膜はＬＢ法によって形成された薄膜である薄膜絶縁体
の構造を提供するものである。Further, the present invention provides a thin film insulator structure in which the conductive member and the aromatic thin film have a mutually overlapping structure, and the aromatic thin film is a thin film formed by an LB method. It is something to do.
作 用 上記した手段による本発明の詳細な説明する。For production The present invention will be explained in detail using the above-mentioned means.
本発明の薄膜絶縁体の構造は、前記したごとく導電性部
材上に、例えばＬＢ法によって形成された単分子膜等の
芳香族薄膜を被着したものであるが、前記芳香族薄膜は
配列構造をなした１分子鎖分の厚みを有する薄膜である
ため、凹凸のない極めて均一な面を構成し、且つ極めて
薄い絶縁層を形成する。As described above, the structure of the thin film insulator of the present invention is such that an aromatic thin film such as a monomolecular film formed by the LB method is deposited on a conductive member, and the aromatic thin film has an array structure. Since it is a thin film having a thickness equivalent to one molecular chain, it forms an extremely uniform surface with no irregularities, and also forms an extremely thin insulating layer.
又、前記芳香族薄膜がポリイミド薄膜である場合、ポリ
イミド樹脂としての基本的な性質を受は継いでおり、そ
のため耐熱性及び機械的強度に優れ、かつ化学的に安定
している。Further, when the aromatic thin film is a polyimide thin film, it inherits the basic properties of a polyimide resin, and therefore has excellent heat resistance and mechanical strength, and is chemically stable.
尚、前記ポリイミド薄膜について実験を試みた結果、次
のことが確認されている。As a result of experiments conducted on the polyimide thin film, the following was confirmed.
すなわち、試料片としてスライドガラス上にアルミニウ
ム電極を蒸着し、その上にＬＢ法によって形成されたポ
リイミド薄膜を付着し、更にその上にアルミニウム電極
を蒸着したものを作成した。That is, a sample piece was prepared in which an aluminum electrode was deposited on a slide glass, a polyimide thin film formed by the LB method was adhered thereon, and an aluminum electrode was further deposited thereon.
このようにして漁備された試料片の各アルミニウム電極
に外部配線を接続し、印加電圧を徐々に上昇し絶縁耐圧
Ｅを測定したところ約１ｏ８（Ｖ／ａｍ）というデータ
が得られた。この値は、従来の絶縁材料が最大約１０’
（Ｖ／ｅｌｆ）程度であったことに比較し、格別の効
果が発揮できた。External wiring was connected to each aluminum electrode of the sample piece prepared in this way, and the applied voltage was gradually increased to measure the dielectric strength E, and data of about 108 (V/am) was obtained. This value is up to about 10' for conventional insulating materials.
(V/elf), an exceptional effect was achieved.
この格別の絶縁耐圧が得られた原因として、ポリイミド
薄膜の厚さ及び均一性に起因するものと考えられる。The reason why this exceptional dielectric strength voltage was obtained is considered to be due to the thickness and uniformity of the polyimide thin film.
すなわち、ポリイミド薄膜の単分子膜の厚さは測定の結
果、約４〔１３前後であることが確認されており、又そ
の厚さはポリイミドの芳香環の構造に関係しており凹凸
のない極めて均一な表面を有した超薄膜が形成されてい
る。又、ポリイミド薄膜を構成する各分子が配列構造を
形成しているため、隣同志で強力に結合しあっており強
度が強いうえ分子の欠陥が発生し難く、したがってピン
ホールも存在し難いことが確認されている。In other words, the thickness of the monomolecular film of the polyimide thin film has been confirmed to be around 4 [13] as a result of measurement, and the thickness is related to the structure of the aromatic ring of polyimide, and is extremely smooth with no irregularities. An ultra-thin film with a uniform surface is formed. In addition, since the molecules that make up the polyimide thin film form an array structure, they are strongly bonded to each other and are strong, and molecular defects are less likely to occur, so pinholes are also less likely to occur. Confirmed.
又、一般的に絶縁破壊は前記したごとくアバランシェ効
果すなわち強電界を受けたキャリアが玉突き現象をおこ
し、雪なだれのごとく次々とキャリアの流れを増加して
ゆき大きな電流の流れに生長して絶縁破壊を起こすこと
がいわれている。In addition, as mentioned above, dielectric breakdown is generally caused by the avalanche effect, that is, carriers subjected to a strong electric field cause a smearing phenomenon, and the flow of carriers increases one after another like a snow avalanche, growing into a large current flow and causing dielectric breakdown. It is said to cause
第１２図は、このアバランシェ効果によるキャリアのな
だれ現象をモデル化した図であり、−ｅは電子、＋ａは
玉突き現象によって電子が離脱された結果生じた正孔と
なった原子を示す。FIG. 12 is a diagram modeling the avalanche phenomenon of carriers due to this avalanche effect, where -e represents an electron and +a represents an atom that becomes a hole resulting from the removal of an electron due to the avalanche effect.
すなわち、前記電子なだれは厚さｔ（Ｘ）の間で電子が
次々と玉突き現象をおこして大きな電流へと生長してゆ
き、絶縁破壊に至ることとなる。That is, in the electron avalanche, electrons successively collide within the thickness t(X) and grow into a large current, leading to dielectric breakdown.
しかし、本発明における前記ポリイミド薄膜の厚さは約
４〔Ｘ１前後であることが確認されており、この厚さに
おいてはトンネル効果等によるごくわずかのキャリアの
移動があっても電子なだれを起すに至らないものと考え
られる。However, it has been confirmed that the thickness of the polyimide thin film in the present invention is around 4 [X1], and at this thickness, even a small amount of carrier movement due to tunneling effect etc. does not cause an electron avalanche. It is considered that this is not possible.
すなわち、前記した絶縁耐圧Ｅが約１０ ’ （７７ｃ
ｍ ）という格別な値が得られたのは、ポリイミド薄膜
が均一性を有しているためピンホールがなく且つ強力で
あり、更に薄膜の厚さが極めて薄くできることによりな
し得たものと考えられる。That is, the dielectric strength E mentioned above is about 10' (77c
The exceptional value of m ) was obtained because the polyimide thin film has uniformity, has no pinholes, is strong, and is thought to be possible because the thin film can be made extremely thin. .
以下、本発明による実施例を添付図面を用いて詳述する
。Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
第１実施例
第１図は、本発明による好適な第１実施例の一部断面図
を示したものである。First Embodiment FIG. 1 shows a partial sectional view of a first preferred embodiment of the present invention.
１は、導電性部材であり、例えばアルミニウムやクロー
ム等の金属製の基板やフィルムである。Reference numeral 1 denotes a conductive member, such as a substrate or film made of metal such as aluminum or chrome.
２は芳香族薄膜であり、ＬＢ法によって形成された例え
ばポリイミド薄膜を前記導電性部材１の表面に被着した
ものである。Reference numeral 2 denotes an aromatic thin film, which is a thin film made of, for example, polyimide formed by the LB method and adhered to the surface of the conductive member 1.
ここで、前記したＬＢ法によるポリイミド薄膜の形成方
法及びポリイミド薄膜の導電性部材１への被着工程につ
いて第２図ないし第６図を用いて説明する。Here, a method for forming a polyimide thin film using the LB method and a process for attaching the polyimide thin film to the conductive member 1 will be explained with reference to FIGS. 2 to 6.
先ず第２図に示す段階で合成されたポリアミド酸を、第
５図に示す段階によって比率が各々同率であるＤＭＡｃ
−ベンゼンにより希釈した溶液と同溶媒による同濃度の
ジメチルヘキサデシルに示すごとく導電性部材１の長さ
方向を下にして液３の中に浸漬してゆき、ポリアミド酸
長鎖その後無水酢酸−ピリジン−ベンゼンを各々１ ：
１ ：３の比率で混合した溶媒に約１２時間浸漬して第
５図に示すポリイミド薄膜を導電性部材１の表面に形成
する。First, the polyamic acid synthesized in the steps shown in FIG. 2 is converted to DMAc in the same ratio in the steps shown in FIG.
- Dimethylhexadecyl solution diluted with benzene and the same concentration of dimethylhexadecyl in the same solvent.Immerse the conductive member 1 lengthwise down in the solution 3, followed by a long chain of polyamic acid, followed by acetic anhydride-pyridine. - 1 each of benzene:
The polyimide thin film shown in FIG. 5 is formed on the surface of the conductive member 1 by immersing it in a solvent mixed at a ratio of 1:3 for about 12 hours.
に面した下面は親水性を示す関係に位置し各分子の向き
が同一方向に規則的に整列した配列構造を形成しており
、第１図に示すポリイミド薄膜からなる単分子膜も規則
的な配列構造をなしており、ポリイミド薄膜の芳香環の
構造により決定される一様な厚さの単分子膜となって導
電性部材１の表面に被着されることになる。The lower surface facing is located in a hydrophilic relationship, forming an array structure in which the orientation of each molecule is regularly aligned in the same direction. The polyimide thin film has an array structure, and is deposited on the surface of the conductive member 1 as a monomolecular film with a uniform thickness determined by the structure of the aromatic ring of the polyimide thin film.
又、前記導電性部材１の表面は予めわずかな酸化膜層が
形成されており、分子薄膜２はこの酸化膜層に被着され
ている。Further, a slight oxide film layer is previously formed on the surface of the conductive member 1, and the molecular thin film 2 is adhered to this oxide film layer.
第２実施例
第７図は、本発明による好適な第２実施例の一部断面図
を示したものである。第７図にお０て、前記第１図に示
した番号と同一の番号で示した構成は同一のものを示し
、同一の方法によって形成されたものであり説明を省略
するが、説明の便宜上番号１で示す構成を当該第２実施
例においては一方の導電性部材と呼ぶ。Second Embodiment FIG. 7 shows a partial sectional view of a second preferred embodiment of the present invention. In FIG. 7, structures indicated by the same numbers as those shown in FIG. The structure indicated by number 1 is referred to as one conductive member in the second embodiment.
さて、第７図において４は他方の導電性部材であり、該
他方の導電性部材４は前記したＬＢ法による工程を経て
一方の導電性部材１の表面に被着されたポリイミド薄膜
からなる芳香族薄膜２の上に形成されたものであり、ア
ルミニウム等の金属をスパッタリング又は真空蒸着等の
蒸着工程、賀金工程若しくは金属ペーストの印刷による
工程等の工程を用いて形成されたものである。Now, in FIG. 7, 4 is the other conductive member, and the other conductive member 4 is an aromatic film made of a polyimide thin film adhered to the surface of one of the conductive members 1 through the above-mentioned LB process. It is formed on a metal such as aluminum using a process such as sputtering or a vapor deposition process such as vacuum evaporation, a gold metal process, or a process by printing a metal paste.
付言すれば、第７図に示す構造は分子薄膜２が一方の導
電性部材１及び他方の導電性部材４によって挾着された
構成をなし、重合構造を形成していることが分る。In addition, it can be seen that the structure shown in FIG. 7 has a configuration in which the molecular thin film 2 is held between the conductive member 1 on one side and the conductive member 4 on the other side, forming a polymerized structure.
そして、図示しないが尚該第２実施例に用いた工程によ
り、ＬＢ法による工程を経てポリイミド薄膜を被着する
工程とそれに続く蒸着工程や鍍金工程等の他の工程を交
互に、若しくは適宜工程を組合わせることにより各種の
重合構造を形成することができる。Although not shown, in accordance with the process used in the second embodiment, the process of depositing a polyimide thin film through the LB process and other processes such as the subsequent vapor deposition process and plating process are performed alternately, or as appropriate. By combining these, various polymer structures can be formed.
又、芳香族薄膜２を挾着する一方の導電性部材１若しく
は他方の導電性部材４の一方又は両方を写真技術等を用
いて部分的に蝕刻除去すれば回路が形成される。Further, a circuit is formed by partially etching away one or both of the conductive member 1 and the other conductive member 4, which clamp the aromatic thin film 2, using a photographic technique or the like.
又芳香族薄膜２を部分的に除去する場合もビーム照射や
蝕刻除去すればよい。Also, when partially removing the aromatic thin film 2, beam irradiation or etching may be used.
第３実施例
第８図は、本発明による好適な第６実施例の芳香族薄膜
被着の工程を示したものである。基本的には、第６図に
示す被着方法とほぼ向い４ρ′のであるが、相違点とし
ては、導電性部材１の柱部材１の片面に被着し、ポリイ
ミド薄膜を片面に形成する点が相違する。Third Embodiment FIG. 8 shows the process of depositing an aromatic thin film according to a sixth preferred embodiment of the present invention. Basically, the deposition method is approximately 4ρ' as shown in FIG. 6, but the difference is that the conductive member 1 is deposited on one side of the pillar member 1, and a polyimide thin film is formed on one side. are different.
この場合、導電性部材１の液３の中への浸漬は、先ず導
電性部材１の一方の端を板厚の中程位浸漬し、しかる後
もう一方の端をゆっくり浸漬するようにして気泡の排出
を配慮することが好ましい。In this case, the conductive member 1 is dipped into the liquid 3 by first dipping one end of the conductive member 1 to about the middle of the plate thickness, and then slowly dipping the other end to prevent air bubbles. It is preferable to consider the emission of
第４実施例
第９図、第１０図及び第１１図は、本発明による好適な
第４実施例の芳香族薄膜被着工程を示したものである。Fourth Embodiment FIGS. 9, 10 and 11 show the process of depositing an aromatic thin film according to a fourth preferred embodiment of the present invention.
当該第４実施例も基本的には第６図に示す・・被着方法
とほぼ同じものであるが、相違点としては導電性部材１
の液３への浸漬と取り出しを繰りｄを多層形成する点が
相違している。この様な工程を経ることによりポリイミ
ド薄膜の厚さを厚くすることも可能である。The fourth embodiment is basically the same as the deposition method shown in FIG. 6, but the difference is that the conductive member 1
The difference is that d is formed in multiple layers by repeatedly immersing it in liquid 3 and taking it out. Through such a process, it is also possible to increase the thickness of the polyimide thin film.
この場合、ポリイミド薄膜の厚さは、前記浸漬と取り出
しの繰り返えし回数に比例しており、ポリイミド薄膜の
厚さは前記回数によって所望の厚さに自由に設定ができ
、又ポリイミド薄膜の均一性には同等影響を及ぼさない
。In this case, the thickness of the polyimide thin film is proportional to the number of times the immersion and removal are repeated, and the thickness of the polyimide thin film can be freely set to a desired thickness depending on the number of times. Uniformity is not equally affected.
尚、以上説明した第１実施例ないし第４実施例において
は導電性部材１の単体に芳香族薄膜２を被着する場合を
引用して説明したが、例えばゼラミツク等の絶縁基板上
に導電性部材１を形成し、その後芳香原簿ｊ−２を形成
してもよく、又半導体のチップ上に形成してもよく、又
ガラス板上に形成された透明導体等の上に芳香族薄膜２
を形成してもよい。In the first to fourth embodiments described above, the aromatic thin film 2 is applied to a single conductive member 1. The member 1 may be formed and then the aromatic register j-2 may be formed, or it may be formed on a semiconductor chip, or the aromatic thin film 2 may be formed on a transparent conductor etc. formed on a glass plate.
may be formed.
又、導電性部材１は金属以外の半導体や導電性樹脂等で
あってもよい。又、芳香族薄膜もポリイミド薄膜に類似
する物性的特性を有したものであればよい。Further, the conductive member 1 may be made of a semiconductor other than metal, a conductive resin, or the like. Further, the aromatic thin film may be any material as long as it has physical properties similar to those of the polyimide thin film.
要は、本発明は前記した実施例に限定されるものではな
く、各種実施態様を包含したものである。In short, the present invention is not limited to the embodiments described above, but includes various embodiments.
発明の効果
以上、詳細に説明したように本発明はアルミニウムやク
ローム等の導電性部材上にラングミュア・ブロジェット
法等によって形成されたポリイミド薄膜等の芳香族薄膜
を被着することにより、薄膜絶縁体の構造を構成するこ
とに特徴がある。その為、次に列挙する効果を奏する。Effects of the Invention As explained in detail above, the present invention provides thin film insulation by depositing an aromatic thin film such as a polyimide thin film formed by the Langmuir-Blodgett method on a conductive member such as aluminum or chrome. It is characterized by the structure of the body. Therefore, the following effects are achieved.
（ａ３ 絶縁層を形成する芳香族薄膜は、配列構造を
なした１分子鎖分の厚みを有する薄膜であるため、凹凸
のない極めて均一な面を構成する。(a3 Since the aromatic thin film forming the insulating layer is a thin film having an array structure and a thickness of one molecular chain, it forms an extremely uniform surface with no unevenness.
（ｂ） 又、ポリイミド薄膜等の芳香族薄膜は、絶縁
耐圧Ｅが約１０’（Ｖ／ｃｍ）前後の値を有しており、
絶縁層の厚さを従来の技術による厚さの例えば１７１０
０倍に薄くできる。(b) Furthermore, aromatic thin films such as polyimide thin films have a dielectric strength E of about 10' (V/cm),
For example, the thickness of the insulating layer is 1710 mm according to the conventional technology.
Can be made 0 times thinner.
（ｃ）又、芳香族薄膜をポリイミド薄膜で構成した場合
、ポリイミド樹脂としての基本的な性質を受は継いでお
り、そのため耐熱性及び機械的！Ｉｉ度に侵れ、かつ化
学的に安定した絶縁層を形成できる。(c) Furthermore, when the aromatic thin film is composed of a polyimide thin film, it inherits the basic properties of polyimide resin, so it has excellent heat resistance and mechanical properties! It is possible to form an insulating layer that is erodible to Ii degrees and is chemically stable.
（（１１又、ポリイミド薄膜を構成する各分子によって
配列榊造を形成しており、隣同志で分子が強力に結合し
あっているため分子の欠陥が発生し難く、シたがってピ
ンホールも存在し難い。((11) Also, each molecule that makes up the polyimide thin film forms an array Sakaki structure, and the neighboring molecules are strongly bonded to each other, making it difficult for molecular defects to occur, and therefore pinholes also exist. It's difficult.
（ｅｌ 本発明は上述のごとく多くの優れた効果を有
し、そのため従来の金属基板回路、集積回路及び各種素
子等はもちろんの事、今後開発が進むであろう３次元集
積回路等の高密度集積回路の絶縁処理に好適なものであ
る。(el) The present invention has many excellent effects as mentioned above, and is therefore useful not only for conventional metal substrate circuits, integrated circuits, and various elements, but also for high-density three-dimensional integrated circuits, etc., which will be developed in the future. It is suitable for insulation treatment of integrated circuits.
第１図は、本発明による好適な第１実施例の一部断面図
である。
第２図は、ポリアミド酸を合成する段階を示す説明図で
ある。
第３図は第２図に示す段階により合成されたポリアミド
酸をジメチルヘキサデシルアミン溶液と混合する段階を
示す説明図である。
第５図は、第２図ないし第４図に示す段階を経て形成さ
れたポリイミドを示す説明図である。
第６図は、導電性部材の表面に芳香族薄膜を被着する工
程を示した説明図である。
第７図は本発明による好適な第２実施例の一部断面図で
ある。
第８図は、本発明による好適な第３実施例の芳香族薄膜
被着工程を示す説明図である。
第９図ないし第１１図は、本発明による好適な第４実施
例の芳香族薄膜被着工程を示す説明図であり、第９図は
始めの浸漬工程、第１０図は始めの取り出し工程、第１
１図は次の浸漬工程を示したものである。
第１２図は、アバランシェ効果によるなだれ現象をモデ
ル化した説明図である。
１．４・・・・・・導電性部材、２・・・・・・芳香族
薄膜。
３・・・・・・液。
以上
第１図
第６図 第７ＦＩ！Ｊ
１１８［ｆｆｌ
ｍ−３
第９図 第１０図 第１１図
１＊１２Ｆ！！
ｅFIG. 1 is a partial cross-sectional view of a first preferred embodiment of the present invention. FIG. 2 is an explanatory diagram showing the steps of synthesizing polyamic acid. FIG. 3 is an explanatory diagram showing the step of mixing the polyamic acid synthesized by the steps shown in FIG. 2 with a dimethylhexadecylamine solution. FIG. 5 is an explanatory diagram showing polyimide formed through the steps shown in FIGS. 2 to 4. FIG. 6 is an explanatory view showing the process of depositing an aromatic thin film on the surface of a conductive member. FIG. 7 is a partial sectional view of a second preferred embodiment of the present invention. FIG. 8 is an explanatory diagram showing the process of depositing an aromatic thin film according to a third preferred embodiment of the present invention. 9 to 11 are explanatory diagrams showing the aromatic thin film deposition process of a fourth preferred embodiment of the present invention, in which FIG. 9 is an initial dipping step, FIG. 10 is an initial removal step, 1st
Figure 1 shows the next dipping step. FIG. 12 is an explanatory diagram modeling the avalanche phenomenon due to the avalanche effect. 1.4... Conductive member, 2... Aromatic thin film. 3...Liquid. Above is Figure 1 Figure 6 Figure 7 FI! J 118 [ffl m-3 Figure 9 Figure 10 Figure 11 1*12F! ! e
Claims (7)
なることを特徴とする薄膜絶縁体の構造。(1) A thin film insulator structure comprising an aromatic thin film formed on a conductive member.
あることを特徴とする特許請求の範囲第１項記載の薄膜
絶縁体の構造。(2) The thin film insulator structure according to claim 1, wherein the aromatic thin film is a film formed in a monomolecular array structure.
面をなし、親水性端部が他方の面をなす配列構造を形成
した１分子鎖分の厚みを有する薄膜であり、該芳香族薄
膜を導電性部材上に少くとも一層被着する構成としたこ
とを特徴とする特許請求の範囲第１項又は第２項記載の
薄膜絶縁体の構造。(3) The aromatic thin film is a thin film having a thickness of one molecule chain and forming an array structure in which the hydrophobic end of each molecule forms one side and the hydrophilic end forms the other side, 3. The structure of a thin film insulator according to claim 1 or 2, characterized in that the aromatic thin film is deposited on at least one layer of a conductive member.
ことによつて形成されたポリイミド薄膜からなることを
特徴とする特許請求の範囲第１項、第２項又は第３項記
載の薄膜絶縁体の構造。(4) The thin film insulation according to claim 1, 2 or 3, wherein the aromatic thin film is a polyimide thin film formed by imidizing polyamic acid. body structure.
れる面に酸化膜層を形成することを特徴とする特許請求
の範囲第１項、第２項、第３項又は第４項記載の薄膜絶
縁体の構造。(5) The conductive member is characterized in that an oxide film layer is formed on at least the surface on which the aromatic thin film is applied. Structure of the thin film insulator described in Section.
をなすことを特徴とする特許請求の範囲第１項、第２項
、第３項、第４項又は第５項記載の薄膜絶縁体の構造。(6) The thin film insulator according to claim 1, 2, 3, 4, or 5, wherein the conductive member and the aromatic thin film form a mutually overlapping structure. structure.
法によつて形成された薄膜であることを特徴とする特許
請求の範囲第１項、第２項、第３項、第４項、第５項又
は第６項記載の薄膜絶縁体の構造。(7) The aromatic thin film is a thin film formed by the Langmuir-Prodgett method.Claims 1, 2, 3, 4, and 5 Structure of the thin film insulator according to item 6 or item 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7390486A JPS62229722A (en) | 1986-03-31 | 1986-03-31 | Thin film insulator structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7390486A JPS62229722A (en) | 1986-03-31 | 1986-03-31 | Thin film insulator structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62229722A true JPS62229722A (en) | 1987-10-08 |
Family
ID=13531642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7390486A Pending JPS62229722A (en) | 1986-03-31 | 1986-03-31 | Thin film insulator structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62229722A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186503A (en) * | 1988-01-13 | 1989-07-26 | Kanegafuchi Chem Ind Co Ltd | Insulating ultrathin membrane |
| JPH03190107A (en) * | 1989-12-19 | 1991-08-20 | Matsushita Electric Works Ltd | Coil block |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58177344A (en) * | 1982-04-12 | 1983-10-18 | 帝人株式会社 | Manufacture of aromatic polyamide tape insulating composite body |
| JPS6163009A (en) * | 1984-09-04 | 1986-04-01 | セイコーインスツルメンツ株式会社 | Condenser |
-
1986
- 1986-03-31 JP JP7390486A patent/JPS62229722A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58177344A (en) * | 1982-04-12 | 1983-10-18 | 帝人株式会社 | Manufacture of aromatic polyamide tape insulating composite body |
| JPS6163009A (en) * | 1984-09-04 | 1986-04-01 | セイコーインスツルメンツ株式会社 | Condenser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186503A (en) * | 1988-01-13 | 1989-07-26 | Kanegafuchi Chem Ind Co Ltd | Insulating ultrathin membrane |
| JPH03190107A (en) * | 1989-12-19 | 1991-08-20 | Matsushita Electric Works Ltd | Coil block |
| JPH0787135B2 (en) * | 1989-12-19 | 1995-09-20 | 松下電工株式会社 | Coil block |
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