JPS6221762A - Silicon carbide refractories - Google Patents
Silicon carbide refractoriesInfo
- Publication number
- JPS6221762A JPS6221762A JP60162751A JP16275185A JPS6221762A JP S6221762 A JPS6221762 A JP S6221762A JP 60162751 A JP60162751 A JP 60162751A JP 16275185 A JP16275185 A JP 16275185A JP S6221762 A JPS6221762 A JP S6221762A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- weight
- parts
- connective tissue
- carbide particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 27
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 26
- 239000011819 refractory material Substances 0.000 title description 4
- 239000002245 particle Substances 0.000 claims description 26
- 210000002808 connective tissue Anatomy 0.000 claims description 17
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010304 firing Methods 0.000 description 6
- 229910052500 inorganic mineral Inorganic materials 0.000 description 6
- 239000011707 mineral Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は組成を改良して高温特性を向上させた炭化珪素
耐火物に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a silicon carbide refractory whose composition has been improved to improve its high-temperature properties.
[従来技術とその問題点]
炭化珪素耐火物は優れた耐火性、耐熱性から工業上重要
な地位を占めており、例えば陶11器焼成用の棚板、そ
の他の焼成冶具及びサヤ等に多用されている。従来の炭
化珪素耐火物は、炭化珪素粒子に10%近い粘土を混合
して混線・焼成し、粘土中の珪酸塩により炭化珪素粒子
を互いに結合したものが一般的である。[Prior art and its problems] Silicon carbide refractories occupy an important position in industry due to their excellent fire resistance and heat resistance, and are widely used, for example, in shelf boards for firing pottery, other firing jigs, and sheaths. has been done. Conventional silicon carbide refractories are generally made by mixing nearly 10% clay with silicon carbide particles, cross-wired and fired, and bonding the silicon carbide particles to each other by silicate in the clay.
しかしながら、従来の炭化珪素耐火物は、結合組織を構
成する珪酸塩の耐火度および機械的強度が低いため、高
温での軟化変形や酸化が生じ易いという問題があった。However, conventional silicon carbide refractories have a problem in that they are susceptible to softening and deformation and oxidation at high temperatures due to the low fire resistance and mechanical strength of silicate constituting the connective tissue.
[問題点を解決するための手段とその作用]本発明は、
上記問題点を解決するためになされたもので、82〜9
4重渚%(以下、全て%は重岱%をいう)の炭化珪素粒
子及び18〜6%の結合組織から成り、炭化珪素粒子は
、500μ以上が30〜55%、500μ〜100μが
5〜30%、100μ〜10μが15〜45%、10μ
以下が2〜15%の粒度分布を有し、且つ結合組織は、
5i02100重量部に対し、M2O3(Mは金属元素
、以下同じ)が4.0〜12.0重量部、MOが0.2
〜2.0重量部、MzOIfio。[Means for solving the problems and their effects] The present invention has the following features:
This was done to solve the above problems, 82-9
It consists of silicon carbide particles of 4% by weight (hereinafter all % refers to weight%) and 18 to 6% connective tissue, and the silicon carbide particles are 30 to 55% of 500μ or more and 5 to 500μ of 500μ to 100μ. 30%, 100μ~10μ 15~45%, 10μ
The following has a particle size distribution of 2-15%, and the connective tissue is
For 100 parts by weight of 5i02, 4.0 to 12.0 parts by weight of M2O3 (M is a metal element, the same applies hereinafter) and 0.2 parts by weight of MO.
~2.0 parts by weight, MzOIfio.
1〜1.0重量部及びバナジウム酸化物が0.5〜10
.0重聞部の組成としたところに特徴を有するものであ
る。1 to 1.0 parts by weight and 0.5 to 10 parts of vanadium oxide
.. It is characterized by the composition of the zero double part.
斯かる構成は、焼成に伴う炭化珪素粒子の酸化にともな
う細粒化を考慮して上記粒度よりも幾分大なる粒度分布
に調整した炭化珪素粒子を、適切な結合組織形成成分と
共に必要ならば有機バインダー・水を添加して混練し、
これを成形・乾燥後、適当な雰囲気下で焼成することに
より得られる。Such a configuration consists of silicon carbide particles whose particle size distribution is adjusted to be somewhat larger than the above particle size in consideration of grain refinement due to oxidation of silicon carbide particles during firing, together with appropriate connective tissue forming components if necessary. Add organic binder and water and knead.
It is obtained by molding and drying this, and then firing it in an appropriate atmosphere.
炭化珪素粒子に添加する結合組織形成成分としては、0
.3〜0.5重量部の鉱物原料、0.2〜0.5重量部
のアルカリ土類酸化物即ちMO及びバナジウム酸化物(
V2OS >が最も好ましい。As the connective tissue forming component added to silicon carbide particles, 0
.. 3 to 0.5 parts by weight of mineral raw materials, 0.2 to 0.5 parts by weight of alkaline earth oxides, namely MO and vanadium oxide (
V2OS> is most preferred.
上記した結合組織の必要組成のうち、一部の二酸化珪素
及びM2O3 、M2O 、 M Oは鉱物原料から得
られるが、バナジウム酸化物は鉱物原料からはほとんど
1ワられないため、鉱物原料とは別に添加することが必
要である。また、MOは、鉱物原料から得られる量のみ
では不足する場合は、やはり別に添加することが必要で
ある。結合組織中の二酸化珪素は、一部は鉱物原料から
得られるが、適当な炭化珪素粒子の粒度および焼成条件
を選択することにより、大部分を炭化珪素粒子の部分酸
化により得ることができる。この焼成条件は、例えば酸
化性雰囲気と中性ないし弱酸化性雰囲気とを組合わせる
ことにより任意に選択実施できる。Of the above-mentioned necessary compositions of connective tissue, some silicon dioxide, M2O3, M2O, and MO can be obtained from mineral raw materials, but vanadium oxide is hardly obtained from mineral raw materials, so it must be prepared separately from mineral raw materials. It is necessary to add Further, if the amount obtained from the mineral raw material alone is insufficient, it is necessary to separately add MO. Although some of the silicon dioxide in the connective tissue is obtained from mineral raw materials, most of it can be obtained by partial oxidation of silicon carbide particles by selecting appropriate silicon carbide particle size and firing conditions. The firing conditions can be arbitrarily selected by, for example, combining an oxidizing atmosphere and a neutral to weakly oxidizing atmosphere.
上記組成の結合組織とすれば、後述する実施例から明ら
かなように、優れた高温特性を発揮し、高温における耐
軟化変形性、耐酸化性、機械的強度及び熱Wi撃強度が
著しく向上する。特に、バナジウム酸化物の適ωの存在
は耐酸化性を大きく向上させることが確認されている。If the connective tissue has the above composition, it will exhibit excellent high-temperature properties and will significantly improve softening deformation resistance, oxidation resistance, mechanical strength, and heat-width impact strength at high temperatures, as is clear from the examples described below. . In particular, it has been confirmed that the presence of vanadium oxide in an appropriate amount greatly improves oxidation resistance.
尚、結合組織の必要組成のうちM2O3は、主としてF
e2Q3及びAl2O3から成り、その比が1:0.5
〜1:1.5であることが最も好ましく、MOは例えば
CaOであることが最も好ましい。In addition, among the necessary components of connective tissue, M2O3 is mainly F
Consists of e2Q3 and Al2O3, the ratio of which is 1:0.5
Most preferably, the ratio is ˜1:1.5, and the MO is, for example, CaO.
炭化珪素粒子の粒度分布を上記の通りに定めた理由は、
主として、炭化珪素粒子の耐火物組織中の充填性の向、
F及び焼結性の促進助長を図って機械的強度を高めると
ともに、適量の二酸化珪素の生成を得るためである。ま
た、炭化珪素粒子と結合組織との重量比を上記の通りに
定めた理由は、特に高温における耐酸化性及び耐軟化変
形性を高めるためである。The reason why the particle size distribution of silicon carbide particles was determined as above is as follows.
Mainly, the filling properties of silicon carbide particles in the refractory structure,
This is to increase mechanical strength by promoting F and sinterability, and to generate an appropriate amount of silicon dioxide. Further, the reason why the weight ratio of silicon carbide particles and connective tissue is determined as described above is to improve oxidation resistance and softening deformation resistance particularly at high temperatures.
[実施例] 次に本発明をいくつかの実施例により例証する。[Example] The invention will now be illustrated by some examples.
実施例1乃至実施例9では、炭化珪素(SiC)の粒度
分布及び結合組織の組成は、第1表及び第2表に示す通
り、特許請求の範囲に記載した数値の範囲内である。一
方、比較例1乃至比較例3は、これらの数値とは炭化珪
素粒子と結合組織との重量比や炭化珪素粒子の粒度分布
が異なり、特に各比較例では共通して、二酸化珪素10
0重量部に対してMOが0.2〜2.0重足部の範囲外
にあり、且つバナジウム酸化物を含有していない。In Examples 1 to 9, the particle size distribution of silicon carbide (SiC) and the composition of the connective tissue are within the range of numerical values described in the claims, as shown in Tables 1 and 2. On the other hand, Comparative Examples 1 to 3 differ from these values in the weight ratio of silicon carbide particles to connective tissue and the particle size distribution of silicon carbide particles.
The MO content is outside the range of 0.2 to 2.0 parts by weight relative to 0 parts by weight, and it does not contain vanadium oxide.
各人から明らかなように、各実施例では各比較例に比べ
、カサ比重が大になり見掛気孔率が大きく減少している
。これはち密な結合組織が形成されたことを意味する。As is clear from each person, in each Example, the bulk specific gravity is larger and the apparent porosity is significantly reduced compared to each Comparative Example. This means that dense connective tissue has been formed.
これに伴い、室温における曲げ強度が50%程度向上し
、また、高温時(1400℃)における曲げ強度も80
%以上も向上している。しかも、高温特性を示す高温油
り変形は桁違いに低下し、酸化増加率も顕著な低下傾向
を示している。これは、高温における優れた耐軟化変形
性及び耐酸化性を有することを意味する。Along with this, the bending strength at room temperature has improved by about 50%, and the bending strength at high temperatures (1400°C) has also increased by 80%.
It has improved by more than %. Moreover, the high-temperature oil deformation, which indicates high-temperature properties, is reduced by an order of magnitude, and the oxidation increase rate also shows a remarkable decreasing trend. This means that it has excellent softening deformation resistance and oxidation resistance at high temperatures.
尚、高温面り変形は、テストピース寸法が400X50
X10mmF、スパン300mm、荷重15K(7,I
/ff1400℃、保持1110D[(7)条件下で測
定したものである。また、酸化増加率は、温度1150
℃、90℃飽和水蒸気中に、酸素を100cc/m i
n供給し、暴露2O0時間の条件下で測定したもので
ある。In addition, for high-temperature surface deformation, the test piece size is 400 x 50.
X10mmF, span 300mm, load 15K (7, I
/ff1400°C, holding 1110D [measured under the conditions (7). In addition, the oxidation increase rate is
℃, 100cc/m i of oxygen in 90℃ saturated steam
It was measured under conditions of 200 hours of exposure.
[発明の効果]
本発明は以上述べたように、所定粒度の炭化珪素粒子を
、二酸化珪素、M2O3 、M2O、MO及びバナジウ
ム酸化物から成る所定組成の結合組織により結合する構
成としたところに特徴を有し、この結果、ち密で高強度
の結合組織が形成されるので、常温における機械的強度
は勿論のこと高温における耐軟化変形性及び耐酸化性等
の高温特性を大幅に向上させた炭化珪素耐火物を提供す
ることができるという優れた効果を奏するものである。[Effects of the Invention] As described above, the present invention is characterized in that silicon carbide particles of a predetermined particle size are bonded by a connective tissue of a predetermined composition consisting of silicon dioxide, M2O3, M2O, MO, and vanadium oxide. As a result, a dense and high-strength connective tissue is formed, resulting in carbonization that significantly improves not only mechanical strength at room temperature but also high-temperature properties such as softening and deformation resistance and oxidation resistance at high temperatures. This has the excellent effect of providing a silicon refractory.
Claims (1)
%の結合組織から成り、炭化珪素粒子は、500μ以上
が30〜55重量%、500μ〜100μが5〜30重
量%、100μ〜10μが15〜45重量%、10μ以
下が2〜15重量%の粒度分布を有し、且つ結合組織は
、SiO_2100重量部に対し、M_2O_3(Mは
金属元素)が4.0〜12.0重量部、MOが0.2〜
2.0重量部、M_2Oが0.1〜1.0重量部及びバ
ナジウム酸化物が0.5〜10.0重量部の組成である
ことを特徴とする炭化珪素耐火物。 2、M_2O_3がFe_2O_3とAl_2O_3と
から成り、それらの重量比が1:0.5〜1:1.5で
ある特許請求の範囲第1項に記載の炭化珪素耐火物。 3、MOが主としてCaOから成る特許請求の範囲第1
項又は第2項に記載の炭化珪素耐火物。[Claims] 1. Consisting of 82 to 94% by weight of silicon carbide particles and 18 to 6% by weight of connective tissue, the silicon carbide particles include 30 to 55% by weight of 500μ or more, and 5 to 30% of silicon carbide particles of 500μ to 100μ. It has a particle size distribution of 100μ to 10μ by 15 to 45% by weight, and 10μ or less to 2 to 15% by weight, and the connective tissue is 4.0% by weight of M_2O_3 (M is a metal element) with respect to 100 parts by weight of SiO_2. ~12.0 parts by weight, MO is ~0.2
A silicon carbide refractory having a composition of 2.0 parts by weight, 0.1 to 1.0 parts by weight of M_2O, and 0.5 to 10.0 parts by weight of vanadium oxide. 2. The silicon carbide refractory according to claim 1, wherein M_2O_3 is composed of Fe_2O_3 and Al_2O_3, and the weight ratio thereof is 1:0.5 to 1:1.5. 3. Claim 1 in which MO mainly consists of CaO
The silicon carbide refractory according to item 1 or 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60162751A JPS6221762A (en) | 1985-07-22 | 1985-07-22 | Silicon carbide refractories |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60162751A JPS6221762A (en) | 1985-07-22 | 1985-07-22 | Silicon carbide refractories |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6221762A true JPS6221762A (en) | 1987-01-30 |
JPH0481543B2 JPH0481543B2 (en) | 1992-12-24 |
Family
ID=15760561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60162751A Granted JPS6221762A (en) | 1985-07-22 | 1985-07-22 | Silicon carbide refractories |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6221762A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63166762A (en) * | 1986-12-26 | 1988-07-09 | 東芝セラミツクス株式会社 | Sic refractories and manufacture |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107427753A (en) * | 2015-03-16 | 2017-12-01 | 三井金属矿业株式会社 | Porous plastid, Porous conjugant, molten metal filter, burn till manufacture method with assembly fixture and porous plastid |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50115211A (en) * | 1974-02-27 | 1975-09-09 | ||
JPS5176311A (en) * | 1974-12-27 | 1976-07-01 | Toshiba Ceramics Co |
-
1985
- 1985-07-22 JP JP60162751A patent/JPS6221762A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50115211A (en) * | 1974-02-27 | 1975-09-09 | ||
JPS5176311A (en) * | 1974-12-27 | 1976-07-01 | Toshiba Ceramics Co |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63166762A (en) * | 1986-12-26 | 1988-07-09 | 東芝セラミツクス株式会社 | Sic refractories and manufacture |
JP2515527B2 (en) * | 1986-12-26 | 1996-07-10 | 東芝セラミツクス株式会社 | Method for manufacturing SiC refractory |
Also Published As
Publication number | Publication date |
---|---|
JPH0481543B2 (en) | 1992-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |