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JPS62208714A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS62208714A
JPS62208714A JP61050401A JP5040186A JPS62208714A JP S62208714 A JPS62208714 A JP S62208714A JP 61050401 A JP61050401 A JP 61050401A JP 5040186 A JP5040186 A JP 5040186A JP S62208714 A JPS62208714 A JP S62208714A
Authority
JP
Japan
Prior art keywords
signal
package
semiconductor device
delay time
packages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61050401A
Other languages
Japanese (ja)
Inventor
Kunio Yoshihara
吉原 邦夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61050401A priority Critical patent/JPS62208714A/en
Publication of JPS62208714A publication Critical patent/JPS62208714A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Logic Circuits (AREA)

Abstract

PURPOSE:To reduce the waveform distortion of a high speed digital signal and the propagation delay time by outputting a signal inputted to a package as it is through a distribution line having a constant characteristic impedance in the package in a semiconductor device comprising plural digital ICs requiring the high speed operation. CONSTITUTION:Two systems are used by using forward/return paths of I/O pins, wirings in the package and bonding wires or the like from a branch point existing as an open stub in connecting high speed ECL elements on a board without fail conventionally. For example, an input signal is subject to feed- through in the packages 12a, 12b while keeping the characteristic impedance Zo constant and the signal is outputted as it is. The outputted signal is inputted again to a next multi-chip package. The signal propagation delay time between the packages connected in cascade is not so much different from a general mounting form where no signal is transmitted in the packages. However, the waveform distortion is less by the length of the open stub decreased extremely and the delay time of the signal is decreased after all.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体装置、特に高速動作を要求される複数
のディジタルICから構成される半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device, and particularly to a semiconductor device composed of a plurality of digital ICs that are required to operate at high speed.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

E CL (Emitter Coupled Log
ic)デバイスなどの高速論理素子を実装し、立上がり
時間の短いパルス信号を歪なく伝送する回路基板を構築
するには、普通の論理ICとは違い特殊な布線方法を使
って込る。第3図はその例であり、回路基板上の配線0
1)はマイクロストリップ線路、及びストリップ線路な
どの定インピーダンス配線であシ、これによシ各素子(
321)、(32b)間を接続している。終端抵抗穐は
、配線の終端における反射波を小さくするために配置し
ておシ、配線の特性インピーダンスZOと同一の値のと
き反射波は生じない。ところがこの特性インピーダンス
は線路の構造上30〜100Ωの値になってしまうため
、この終端抵抗は1118か2個しか置けない。つまり
、BCLICのドライブ能力(負荷駆動能力)は関Ωの
負荷であれば高々2個を駆動する電流供給能力しか持っ
ていないのが普通である。
E CL (Emitter Coupled Log
ic) To build a circuit board that can mount high-speed logic elements such as devices and transmit pulse signals with short rise times without distortion, a special wiring method is used, unlike ordinary logic ICs. Figure 3 is an example of this, with wiring 0 on the circuit board.
1) can be done with constant impedance wiring such as microstrip lines and strip lines, and each element (
321) and (32b) are connected. The terminating resistor is arranged to reduce the reflected wave at the end of the wiring, and no reflected wave occurs when the value is the same as the characteristic impedance ZO of the wiring. However, because this characteristic impedance has a value of 30 to 100 ohms due to the structure of the line, only 1118 or two terminating resistors can be installed. In other words, the drive capability (load drive capability) of a BCLIC normally has a current supply capability that can drive at most two loads of Ω.

このため、1個のBCLドライバーICが多数個のIC
を駆動する必要のある場合には、第4図のようにボード
上の一本の伝送線路(41)の途中に各入力端子(43
a) 、(43b)、 (43c)、(43d)、 (
43e)が配置されるように配線する。しかし、その伝
送線路から本当のICの入力部分までの距離(パッケー
ジ内の配線など)が長いときには、この部分がオープン
スタブ lとして働き、ドライバーICから見たときには容置性
負荷が各部分にlftかれたのと等価となり、伝送波形
の歪、伝搬遅延時間の増加へとつながっていた。この傾
向は大型のパッケージに実装された場合、つまり、デュ
アルインラインパッケージや大型セラミックパッケージ
などの場合に顕著となる。
Therefore, one BCL driver IC can be connected to many ICs.
If it is necessary to drive the input terminals (43) in the middle of one transmission line (41) on the board as shown in
a) , (43b), (43c), (43d), (
43e). However, when the distance from the transmission line to the input part of the real IC is long (such as wiring inside the package), this part acts as an open stub l, and when viewed from the driver IC, a capacitive load is applied to each part. This results in distortion of the transmitted waveform and an increase in propagation delay time. This tendency becomes noticeable when mounted in a large package, such as a dual in-line package or a large ceramic package.

また、より高速動作システムなどでは、大型のセラミッ
ク基板などに複数個の高速デバイスを実装する。マルチ
チップパッケージが使用されるが、このような場合でも
同様の障害が起きる。ただしこの場合(マイクロストリ
ップ線路61))のオープンスタブ(ト)は、主に第5
図のようなボンディングワイヤなどの半導体チップ(s
4a)、(ssb)と基板との接続部分の長さが原因で
ある。これは前述のボード上の配線の場合のように長く
はないが、動作周波数が高いときKは、このようなボン
ディングワイヤ程度のオープンスタブでも波形歪などに
よりシステム性能に大きな影響を与える。
Additionally, for higher-speed operating systems, multiple high-speed devices are mounted on a large ceramic substrate or the like. Multi-chip packages are used, but similar failures occur in such cases. However, in this case (microstrip line 61)), the open stub (g) is mainly the fifth
Semiconductor chips (s) such as bonding wires as shown in the figure
This is caused by the length of the connecting portion between 4a) and (ssb) and the board. Although this is not as long as the wiring on the board described above, when the operating frequency is high, even an open stub as large as a bonding wire has a large effect on system performance due to waveform distortion.

〔発明の目的〕[Purpose of the invention]

この発明は上述した従来装置の欠点を改良したもので、
高速ディジタル信号のシステム内の伝送において波形歪
が少なく、伝搬遅延時間を小さくした半導体装置を提供
することを目的とする。
This invention improves the drawbacks of the conventional device mentioned above.
It is an object of the present invention to provide a semiconductor device with less waveform distortion and reduced propagation delay time in the transmission of high-speed digital signals within a system.

〔発明の概要〕[Summary of the invention]

本発明では、波形歪や伝搬遅延時間増加の原因であった
オープンスタブの部分をなくすために、パッケージ内又
はICチップ内で信号のフィードスルー構造をとること
を特徴とする。
The present invention is characterized in that a signal feed-through structure is provided within the package or IC chip in order to eliminate the open stub portion that causes waveform distortion and increased propagation delay time.

すなわち、従来ボード上の高速ECL素子の間全接続す
る場合に必ずオープンスタブとして存在していた。分岐
点からI10ピン、パッケージ内の配線、ボンディング
ワイヤ等の部分を行きと帰シとして二系統で構成し、こ
のオープンスタブを実質的になぐすものである。これを
実現する上で重要なことは、ボード上の配線の特性イン
ピーダンスZoとパッケージ内部での配線の特性インピ
ーダンスが一致することであり、特にI10ビン、ボン
ディングワイヤー付近では、インピーダンスが上がシ易
い。そこで本発明ではパッケージのI10ピン、及びポ
ンディングパッドでは、基準となる電圧(例えば接地線
)と必ず隣シ合わせに配置することを2番目の特徴とし
ている。
That is, conventionally, when all high-speed ECL elements on a board are connected, an open stub always exists. The system is constructed with two systems, one connecting and the other connecting the I10 pin, wiring inside the package, bonding wires, etc. from the branch point to the terminal, and substantially eliminates this open stub. What is important in achieving this is that the characteristic impedance Zo of the wiring on the board matches the characteristic impedance of the wiring inside the package.Especially near the I10 bin and the bonding wire, the impedance tends to rise. . Therefore, the second feature of the present invention is that the I10 pin of the package and the bonding pad are always placed adjacent to a reference voltage (for example, a ground line).

〔発明の効果〕〔Effect of the invention〕

本発明によって、高速ディジタルシステムにおける信号
伝送の波形歪を最小に押さえ、伝搬遅延時間を小さくす
ることができた。例えばI10ピン(リード)、パッケ
ージ内の配線などで1(Ml!のオープンスタブがあっ
た場合には、3〜4 GHzぐらいの周波数(立上が9
時間で200〜3001)S)から影響が現れていたの
が、本発明により約2倍の周波数、(半分の立ち上がシ
時間)まで使用可能になった。
According to the present invention, waveform distortion of signal transmission in a high-speed digital system can be minimized and propagation delay time can be reduced. For example, if there is an open stub of 1 (Ml!) on the I10 pin (lead) or the wiring inside the package, the frequency will be around 3 to 4 GHz (with a rise of 9
Although the influence had appeared from 200 to 3001 S) in terms of time, the present invention has made it possible to use up to about twice the frequency (half the start-up time).

〔発明の実施例〕[Embodiments of the invention]

次に本発明の実施例を図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.

マルチチップパッケージを多数個配置したような半導体
装置では、パッケージのI10ビンから内部のICチッ
プまでの距離が、他の単一素子を実装するチップキャリ
アなどよりも比較的長く、この部分を極力短くできるよ
うに設計するか又は、終端抵抗RLをパッケージ内にi
if < Lかなかった。そこで本発明では第1図に示
すように、特性インピーダンスZoを一定に保った11
パツケージ(12a)。
In a semiconductor device that has many multi-chip packages arranged, the distance from the package's I10 bin to the internal IC chip is relatively longer than other chip carriers that mount a single element, so this part should be kept as short as possible. Or, the termination resistor RL can be installed inside the package.
if < L. Therefore, in the present invention, as shown in FIG.
Package (12a).

(12b)内を通過(フィードスルー)させ、入力され
た信号はまたそのまま出てくる。この出て来た信号ハ次
のマルチチップパッケージへ再び入力される。このよう
に縦続接続されたパッケージ間の信号伝搬遅延時間は、
パッケージ内を信号が通過しない−搬の実装形態の場合
とあまり変らないが、オーブンスタブの長さが極端に小
さくなっている分だけ波形歪が小さく、結局信号の遅延
時間も小さくなる。尚、第1図において、16はI10
ビンである。
(12b) (feed through), and the input signal comes out as is. This output signal is input again to the next multi-chip package. The signal propagation delay time between packages connected in series in this way is
This is not much different from the case of a carrier-type implementation in which the signal does not pass through the package, but the length of the oven stub is extremely short, so the waveform distortion is small and the signal delay time is also small. In addition, in FIG. 1, 16 is I10
It's a bottle.

第2図は、さらに一つのマルチチップパッケージ上の複
数のICに信号を分配する場合の実施例について示して
いる。入力される信号はボンディング部でのインピーダ
ンスを低く保つために基準電圧線(接地線など)とペア
で接続される。半導体チップ(24a)、(24b)上
の配線も、特性インピーダンスZoをコントロールする
tために、マイクロストリップ線路、又はユプラナー線
路として配線し、そのままポンディング部を通過し、半
導体チップの外部へ取シ出される。この出力信号は各部
の特性インピーダンスが十分に良くマツチングされてい
る限シ、入力信号と同一の信号が出力される。
FIG. 2 further shows an embodiment in which signals are distributed to a plurality of ICs on one multi-chip package. The input signal is connected in pairs with a reference voltage line (such as a ground line) to keep impedance low at the bonding section. The wiring on the semiconductor chips (24a) and (24b) is also wired as a microstrip line or a up-planar line in order to control the characteristic impedance Zo, passes through the bonding part as it is, and is connected to the outside of the semiconductor chip. Served. This output signal is the same as the input signal as long as the characteristic impedances of each part are matched well enough.

すなわち、多数個を縦続接続させた場合でも信号の歪は
小さくなる。
That is, even when a large number of them are connected in cascade, the signal distortion is reduced.

当然の事ながら、第1図と第2図を同時に実現すること
も考えられる。
Naturally, it is also conceivable to realize both FIG. 1 and FIG. 2 at the same time.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を説明するだめの図、第2図
は本発明の他の実施例を説明するための図、第3図〜第
5図は従来例を説明するための図である。 12a、12k)・・・マルチパッケージ124a、2
4b・・・半導体チップ。 代理人 弁理士  則 近 憲 佑 同     竹 花 喜久男 第1図 第2図 第3図 第4図
FIG. 1 is a diagram for explaining one embodiment of the present invention, FIG. 2 is a diagram for explaining another embodiment of the present invention, and FIGS. 3 to 5 are diagrams for explaining a conventional example. It is a diagram. 12a, 12k)...Multi package 124a, 2
4b...Semiconductor chip. Agent Patent Attorney Noriyuki Chika Yudo Kikuo Takehana Figure 1 Figure 2 Figure 3 Figure 4

Claims (4)

【特許請求の範囲】[Claims] (1)1個又は複数個の半導体素子を内蔵したパッケー
ジと、そのパッケージを実装するボードとから成る半導
体装置において、前記パッケージに入力される信号が、
パッケージ内で一定の特性インピーダンスの配線路によ
ってそのまま出力される端子を持つことを特徴とする半
導体装置。
(1) In a semiconductor device consisting of a package containing one or more semiconductor elements and a board on which the package is mounted, a signal input to the package is
A semiconductor device characterized by having a terminal that is output as is through a wiring path with a constant characteristic impedance within a package.
(2)パッケージは複数個の半導体素子を実装するマル
チチップパッケージであって、前記半導体チップの少な
くとも1個において、パッケージ上の配線から入力され
た信号が半導体チップ上で一定の特性インピーダンスの
配線路によってそのまま出力される端子を持つことを特
徴とする特許請求の範囲第1項記載の半導体装置。
(2) The package is a multi-chip package that mounts a plurality of semiconductor elements, and in at least one of the semiconductor chips, a signal input from the wiring on the package is transmitted through a wiring path with a constant characteristic impedance on the semiconductor chip. The semiconductor device according to claim 1, characterized in that the semiconductor device has a terminal that outputs the output as it is.
(3)入出力の端子のとなりが基準電圧端子であること
を特徴とする特許請求の範囲第1項及び第2項記載の半
導体装置。
(3) The semiconductor device according to claims 1 and 2, wherein a reference voltage terminal is located next to the input/output terminal.
(4)半導体素子又はチップがGaAs、GaAlAs
ディジタルICであることを特徴とする特許請求の範囲
第1項及び第2項記載の半導体装置。
(4) Semiconductor element or chip is made of GaAs or GaAlAs
3. The semiconductor device according to claim 1, wherein the semiconductor device is a digital IC.
JP61050401A 1986-03-10 1986-03-10 Semiconductor device Pending JPS62208714A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61050401A JPS62208714A (en) 1986-03-10 1986-03-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61050401A JPS62208714A (en) 1986-03-10 1986-03-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS62208714A true JPS62208714A (en) 1987-09-14

Family

ID=12857845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61050401A Pending JPS62208714A (en) 1986-03-10 1986-03-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS62208714A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169355A (en) * 1980-05-29 1981-12-26 Mitsubishi Electric Corp Semiconductor device
JPS5832656B2 (en) * 1976-10-20 1983-07-14 三菱電機株式会社 Ultrasonic probe device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832656B2 (en) * 1976-10-20 1983-07-14 三菱電機株式会社 Ultrasonic probe device
JPS56169355A (en) * 1980-05-29 1981-12-26 Mitsubishi Electric Corp Semiconductor device

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