JPS62206433A - Substrate for inspection - Google Patents
Substrate for inspectionInfo
- Publication number
- JPS62206433A JPS62206433A JP61049691A JP4969186A JPS62206433A JP S62206433 A JPS62206433 A JP S62206433A JP 61049691 A JP61049691 A JP 61049691A JP 4969186 A JP4969186 A JP 4969186A JP S62206433 A JPS62206433 A JP S62206433A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- pattern
- concave
- inspection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 120
- 238000007689 inspection Methods 0.000 title claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052804 chromium Inorganic materials 0.000 abstract description 8
- 239000011651 chromium Substances 0.000 abstract description 8
- 239000005361 soda-lime glass Substances 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 abstract description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003278 mimic effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 238000001514 detection method Methods 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- FZIZEIAMIREUTN-UHFFFAOYSA-N azane;cerium(3+) Chemical compound N.[Ce+3] FZIZEIAMIREUTN-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GOUZWOPDZOFEKT-UHFFFAOYSA-N dichloromethane;nitric acid Chemical compound ClCCl.O[N+]([O-])=O GOUZWOPDZOFEKT-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、検査用基板に係り、特に、フォトマスク用ブ
ランクやシリコンウェハ等の基板上に存在する異物の個
数や大きさ等を検査する基板表面検査装置の検出信号校
正用基板として用いて好適な検査用基板に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to inspection substrates, and in particular, to inspection of the number and size of foreign particles present on substrates such as photomask blanks and silicon wafers. The present invention relates to an inspection substrate suitable for use as a detection signal calibration substrate of a substrate surface inspection device.
半導体素子製造工程で用いられるフォトマスク用ブラン
クやシリコンウェハ等の基板は、その基板表面に塵埃等
の異物及びキズ等の微細欠陥が存在しない高品質のもの
であることが要求される。Substrates such as photomask blanks and silicon wafers used in semiconductor device manufacturing processes are required to be of high quality and free from foreign matter such as dust and minute defects such as scratches on the surface of the substrate.
そこで、基板表面の微細欠陥の個数や大きさ等を検査す
るために、例えばレーザ光を用いる基板表面検査装置が
使用されている。この基板表面検査装置は、第5図に示
すように、レーザ光源1からレーザ光2を被検査基板3
の表面に照射し、その表面に存在する異物4より散乱す
るレーザ散乱光5を受光装置6によって検出する。レー
ザ散乱光5の光量は異物4の大きさに対応し、レーザ散
乱光5を検出した受光装置6から発生する検出信号の大
きさも異物4の大きさに対応する。すなわち、所定の大
きさの異物4(例;直径1μmの球状の塵埃)より散乱
するレーザ散乱光5を検出した受光装置6から発生する
検出信号の犬ぎさも、その異物4の大きさに対応した所
定の値となる。しかし、異なる基板表面検査装置におい
ては、受光装置6の特性の差違等によってこの所定の値
はそれぞれ異なり、また、同一の基板表面検査装置にお
いても使用環境の変化等によってこの所定の値は異なっ
てくる。従って、異なる基板表面検査装置において、所
定の大きさの異物に対応した所定の値をそれぞれ選択決
定すること、あるいは、同一の基板表面検査装置におい
て使用環境の変化等に際して所定の値を選択決定するこ
とが必要となる。Therefore, in order to inspect the number, size, etc. of minute defects on the substrate surface, a substrate surface inspection apparatus using, for example, a laser beam is used. As shown in FIG. 5, this substrate surface inspection apparatus emits a laser beam 2 from a laser light source 1 to a substrate to be inspected.
The light receiving device 6 detects the scattered laser light 5 scattered by the foreign matter 4 present on the surface. The light amount of the laser scattered light 5 corresponds to the size of the foreign object 4, and the magnitude of the detection signal generated from the light receiving device 6 that detected the laser scattered light 5 also corresponds to the size of the foreign object 4. That is, the sharpness of the detection signal generated from the light receiving device 6 that detects the laser scattered light 5 scattered by a foreign object 4 of a predetermined size (e.g., spherical dust with a diameter of 1 μm) also corresponds to the size of the foreign object 4. It becomes a predetermined value. However, in different substrate surface inspection devices, this predetermined value differs due to differences in the characteristics of the light receiving device 6, and even in the same substrate surface inspection device, this predetermined value differs due to changes in the usage environment, etc. come. Therefore, it is necessary to select and determine a predetermined value corresponding to a foreign substance of a predetermined size in different board surface inspection equipment, or to select and decide a predetermined value in the same board surface inspection equipment when the usage environment changes, etc. This is necessary.
この所定の値を選択決定するために、例えば直径1μm
の球状の塵埃に対応する検出信号を発生させる擬似的異
物を形成した検出信号校正用基板が使用されている。そ
して、この検出信号校正用基板を用いて、前述した各場
合における所定の値を選択決定し、基板表面検査装置の
校正(キャリブレーション)を行っている。In order to select and determine this predetermined value, for example, a diameter of 1 μm
A detection signal calibration substrate is used that has a pseudo foreign object formed thereon that generates a detection signal corresponding to spherical dust particles. Then, using this detection signal calibration board, predetermined values in each of the above-mentioned cases are selected and determined, and the board surface inspection apparatus is calibrated.
従来、検出信号校正用基板として、第6図(a)〜(e
)に示すような方法で製作されたものが使用されている
。すなわち、シリコン基板7にポジ型フォトレジス]・
8を塗布しく第6図(a) ) 、次に所望のパターン
を得るべく露光マスク9を通して、ポジ型フォトレジス
ト8の上方から紫外光10を露光する(第6図(b))
。次に、現像液により現像処理して、ポジ型フォトレジ
スト8の露光部分を除去し、未露光部分からなるレジス
トパターン11をシリコン基板7上に形成する(第6図
(C))。Conventionally, as a detection signal calibration board, Figs. 6(a) to (e)
) is used. In other words, a positive photoresist on the silicon substrate 7]
8 is applied (FIG. 6(a)), and then UV light 10 is exposed from above the positive type photoresist 8 through an exposure mask 9 to obtain a desired pattern (FIG. 6(b)).
. Next, the exposed portion of the positive photoresist 8 is removed by developing with a developer, and a resist pattern 11 consisting of the unexposed portion is formed on the silicon substrate 7 (FIG. 6(C)).
次に、シリコン基板7に対応したエツチング液を用いて
、レジストパターン11から露出したシリコン基板7の
部分をエツチングしたシリコン基板7′を形成するく第
6図(d))。次に、レジストパターン11を剥離液に
より剥頗して、シリコン基板7′上に擬似的異物として
のシリコンパターン7aを形成する(第6図(e))。Next, using an etching solution suitable for the silicon substrate 7, the portion of the silicon substrate 7 exposed from the resist pattern 11 is etched to form a silicon substrate 7' (FIG. 6(d)). Next, the resist pattern 11 is peeled off using a stripping solution to form a silicon pattern 7a as a pseudo foreign substance on the silicon substrate 7' (FIG. 6(e)).
以上のようにして、第6図(f)に示すような、シリコ
ン基板7′上にシリコンパターン7aを形成した検出信
号校正用基板12を製作して検査用基板として用いてい
た。As described above, a detection signal calibration substrate 12 having a silicon pattern 7a formed on a silicon substrate 7' as shown in FIG. 6(f) was manufactured and used as a test substrate.
しかし、シリコン基板7′及びシリコンパターン7aか
らなる検出信号校正用基板12はシリコン結晶からなる
為、結晶構造上の性質から非常に脆いという欠点がある
。従って、特に洗浄用ブラシ等を用いて被洗浄物を洗浄
するスクラブ洗浄法によって検出信号校正用基板12を
洗浄する場合、検出信号校正用基板12は容易に破損し
てしまう。However, since the detection signal calibration substrate 12 consisting of the silicon substrate 7' and the silicon pattern 7a is made of silicon crystal, it has the disadvantage that it is extremely fragile due to its crystal structure. Therefore, especially when cleaning the detection signal calibration substrate 12 by a scrub cleaning method in which the object to be cleaned is cleaned using a cleaning brush or the like, the detection signal calibration substrate 12 is easily damaged.
また、シリコン結晶からなる検出信号校正用基板12゛
は酸化されやすい為、擬似的異物として形成されたシリ
コンパターン7aの形状や大きさも酸化によって変化し
てしまいやすい。このようにシリコンパターン7aの形
状や大きさが変化すると、そのシリコンパターン7aよ
り散乱するレーザ散乱光5の光量も変化し、受光装置6
において発生する検出信号も変化してしまう。すなわち
、例えば直径1μmの球状の塵埃に対応する検出信号を
発生させる擬似的異物としてのシリコンパターン7aを
形成した検出信号校正用基板12において、酸化によっ
て形状や大きさが変化したシリコンパターン7aは直径
1μmの球状の塵埃に対応する検出信号を発生させなく
なってしまう。以上のように酸化によって形状や大きさ
が変化したシリコンパターンを有する検出信号校正用基
板を用いては基板表面検査装置の校正を正確に行うこと
はできず、そのような検出信号校正用基板は検査用基板
として使用できない。Further, since the detection signal calibration substrate 12' made of silicon crystal is easily oxidized, the shape and size of the silicon pattern 7a formed as a pseudo foreign object are also likely to change due to oxidation. When the shape and size of the silicon pattern 7a change in this way, the amount of laser scattered light 5 scattered from the silicon pattern 7a also changes, and the light receiving device 6
The detection signal generated in this case also changes. That is, in the detection signal calibration substrate 12 on which a silicon pattern 7a is formed as a pseudo foreign substance that generates a detection signal corresponding to spherical dust particles having a diameter of 1 μm, for example, the silicon pattern 7a whose shape and size have changed due to oxidation has a diameter A detection signal corresponding to spherical dust particles of 1 μm cannot be generated. As described above, it is not possible to accurately calibrate a substrate surface inspection device using a detection signal calibration substrate that has a silicon pattern whose shape and size have changed due to oxidation. Cannot be used as a test board.
5一
本発明は、以上のような事情を鑑みてなされたものであ
り、洗浄時等において破損しにくく、さらに形状や大き
さが変化しない擬似的異物を形成した検査用基板を提供
することを目的とする。51 The present invention has been made in view of the above-mentioned circumstances, and aims to provide an inspection substrate that is not easily damaged during cleaning, etc., and has pseudo foreign matter formed thereon that does not change in shape or size. purpose.
本発明は、上記した目的を達成する為になされたもので
あり、エツチングにより基板の表面に凹状又は凸状に加
工された部分を有する基板と、前記基板のエツチングに
耐性を有し、かつ前記基板の最上面にのみ形成された薄
膜パターンと、前記薄膜パターン上及び前記基板の露出
表面に形成された反射膜とを具備していることを特徴と
する検査用基板である。The present invention has been made to achieve the above-mentioned objects, and provides a substrate having a concave or convex portion formed on the surface thereof by etching, and a substrate that is resistant to etching and that is resistant to etching. The inspection substrate is characterized by comprising a thin film pattern formed only on the uppermost surface of the substrate, and a reflective film formed on the thin film pattern and on the exposed surface of the substrate.
本発明の検査用基板において、基板は薄膜のエツチング
に耐性を有し、薄膜は基板のエツチングに耐性を有する
。In the inspection substrate of the present invention, the substrate has a thin film resistant to etching, and the thin film has a substrate resistant to etching.
第1図は本発明の実施例による検査用基板を示す斜視図
、第2図は同実施例による検査用基板の−〇 −
製造方法の各■稈を示す断面図である。FIG. 1 is a perspective view showing a test board according to an embodiment of the present invention, and FIG. 2 is a sectional view showing each culm of the method for manufacturing the test board according to the same embodiment.
本発明の実施例による検査用基板13は、第1図。A test substrate 13 according to an embodiment of the present invention is shown in FIG.
並びに第2図(f)及び(0)に示したように、エツチ
ングにより基板の表面に凹状に加工された部分14(第
2図(f)参照。)を有する基板15と、基板15の最
上面15aにのみ形成された薄膜パターン16と、簿膜
パターン16上及び基板15の凹状に加工された部分1
4内の露出表面14aに形成された反射膜17とを具備
している。なお、基板15はソーダライムガラスからな
り、薄膜パターン16はクロムからなり、反射膜11は
タンタルからなる。さらに、この検査用基板13は凹状
に加工された部分14に対応する形状を有する凹状パタ
ーン18を備え、この凹状パターン18が、前述した基
板表面検査装置のレーザ光源1から照射されるレーザ光
2を散乱する擬似的異物となる。As shown in FIGS. 2(f) and 2(0), there is a substrate 15 having a concave portion 14 (see FIG. 2(f)) formed on the surface of the substrate by etching, and the outermost portion of the substrate 15. A thin film pattern 16 formed only on the upper surface 15a, and a concave portion 1 on the thin film pattern 16 and on the substrate 15.
4, and a reflective film 17 formed on the exposed surface 14a of the inside. Note that the substrate 15 is made of soda lime glass, the thin film pattern 16 is made of chromium, and the reflective film 11 is made of tantalum. Furthermore, this inspection substrate 13 is provided with a concave pattern 18 having a shape corresponding to the concavely processed portion 14, and this concave pattern 18 is exposed to the laser beam irradiated from the laser light source 1 of the substrate surface inspection apparatus described above. It becomes a pseudo foreign object that scatters.
次に、検査用基板13の製造方法について第2図を用い
て説明する。Next, a method for manufacturing the test substrate 13 will be explained using FIG. 2.
先ず、ソーダライムガラスを所定寸法(例:5x5xO
,09インチ)に加工し、このソーダライムガラスの両
生表面を研磨し、純水及びイソプロピルアルコール等に
より洗浄し、乾燥してソーダライムガラスからなる基板
19を得る。この基板19の一生表面上にスパッタリン
グ法によりクロムからなる薄膜20(膜厚: 1000
人)を被着して形成し、次に、薄膜20上にポジ型フォ
トレジスト21(例;シラプレー社製 Ml” 135
0.膜厚: 5000人)をスピンコード法により塗布
する(第2図(a))。なお、クロムからなる薄膜20
は、後記する基板19のエツチング手段では、エツチン
グされない。すなわち、薄膜20は、基板19のエツチ
ングに耐性を有する。次に、所定のパターンを得るべく
露光マスク22を通して、ポジ型フ第1〜レジスト21
の上方から遠紫外光ないし紫外光23(波長:200〜
450nm )を露光する(第2図(b))。次に、現
像液(例:HP−1350専用デイベロツバ)により所
定時間(例;70秒)現像処理して、ポジ型フォトレジ
スト21の露光部分を除去し、未露光部分からなるレジ
ストパターン24を薄膜20上に形成する(第2図(C
))。First, measure the soda lime glass to the specified dimensions (e.g. 5x5xO
, 09 inches), the amphibatic surfaces of this soda lime glass are polished, washed with pure water, isopropyl alcohol, etc., and dried to obtain a substrate 19 made of soda lime glass. A thin film 20 (thickness: 1000 mm) of chromium is deposited on the surface of this substrate 19 by sputtering.
Next, on the thin film 20, a positive photoresist 21 (for example, Ml" 135 manufactured by Silapray) is formed.
0. A film thickness of 5,000 ml was applied by a spin code method (FIG. 2(a)). Note that the thin film 20 made of chromium
is not etched by the substrate 19 etching means described later. That is, the thin film 20 is resistant to etching of the substrate 19. Next, in order to obtain a predetermined pattern, the positive type resists 1 to 21 are exposed through an exposure mask 22.
Far ultraviolet light or ultraviolet light 23 (wavelength: 200~
450 nm) (Fig. 2(b)). Next, the exposed portion of the positive photoresist 21 is removed by developing with a developing solution (e.g., Developer for HP-1350) for a predetermined period of time (e.g., 70 seconds), and the resist pattern 24 consisting of the unexposed portion is formed into a thin film. 20 (Fig. 2 (C)
)).
次に、薄膜20に対応したエツチング液(例;硝酸第2
セリウムアンモニウムと過塩素酸との混合水溶液)を用
いて、所定時間(例;40秒)エツチングして、薄膜パ
ターン16を形成する(第2図(d))。この際、薄膜
20に対応したエツチング液では、基板19はエツチン
グされない。次に、レジストパターン24を剥離液(例
;熱濃硫酸90℃)により剥離した後、常温の硫酸中に
浸して温度を下げ、水。Next, apply an etching solution suitable for the thin film 20 (e.g. nitric acid dichloromethane).
Etching is performed for a predetermined time (for example, 40 seconds) using a mixed aqueous solution of cerium ammonium and perchloric acid to form a thin film pattern 16 (FIG. 2(d)). At this time, the substrate 19 is not etched with the etching solution suitable for the thin film 20. Next, the resist pattern 24 is peeled off using a stripping solution (e.g. hot concentrated sulfuric acid at 90° C.), then immersed in sulfuric acid at room temperature to lower the temperature, and then soaked in water.
イソプロピルアルコール中で超音波洗浄し、フレオン蒸
気中で乾燥して、薄膜パターン16を基板19上に形成
する(第2図(e))。A thin film pattern 16 is formed on the substrate 19 by ultrasonic cleaning in isopropyl alcohol and drying in Freon vapor (FIG. 2(e)).
次に、基板19に対応した基板用エツチング液(例;フ
ッ化水素酸とフッ化アンモニウム水溶液との混合溶液)
を用い、所定時間(例;3分間)露出した基板19の部
分をエツチングすることにより、基板19の表面に凹状
に加工された部分14を形成して基板15を製作する。Next, a substrate etching liquid (e.g., a mixed solution of hydrofluoric acid and ammonium fluoride aqueous solution) corresponding to the substrate 19 is applied.
By etching the exposed portion of the substrate 19 for a predetermined time (for example, 3 minutes) using an etching method, a concave portion 14 is formed on the surface of the substrate 19, and the substrate 15 is manufactured.
この時、基板15の最上面15aにのみ薄膜パターン1
6が形成されることになる。(第2図(f))。また、
基板19に対応した基板用エツチング液では、薄膜パタ
ーン16はエツチングされない。次に、薄膜パターン1
6上及び基板15の凹状に加工された部分14内の露出
表面14aに、反射性及び遮光性を有するタンタルから
なる反射膜17(膜厚: 1ooo人)をスパッタリン
グ法により被着して形成し、部分14に対応した形状を
右する凹状パターン18を形成して検査用基板13を製
作する(第2図(g))。この凹状パターン18が検査
用基板13の擬似的異物としで作用する。At this time, the thin film pattern 1 is formed only on the uppermost surface 15a of the substrate 15.
6 will be formed. (Figure 2(f)). Also,
The thin film pattern 16 is not etched with a substrate etching solution suitable for the substrate 19. Next, thin film pattern 1
A reflective film 17 (thickness: 100 mm) made of tantalum having reflective and light-shielding properties is deposited on the exposed surface 14a of the concave portion 14 of the substrate 15 by sputtering. , a concave pattern 18 having a shape corresponding to the portion 14 is formed to manufacture the test substrate 13 (FIG. 2(g)). This concave pattern 18 acts as a pseudo foreign object on the inspection substrate 13.
本実施例の検査用基板13によれば、この検査用基板1
3が、ソーダライムガラスからなる基板15と、薄膜パ
ターン16上及び基板15の露出表面14aに形成され
基板15を被覆する反射膜17とを具備してなるので、
検査用基板13の洗浄時等において破損しにくい。さら
に、この検査用基板13は酸化等の化学変化を起こしに
くいので、擬似的異物としての凹状パターン18の形状
や大きさも極めて変化しにくい。従って、この検査用基
板13は、特に前述した基板表面検査装置の検出信号校
正用基板として用いて好適である。なお、この検査用基
板13は、特に検出信号校正用基板として用いて好適で
あるが、その他の用途に用いてもよいことは言うまでも
ない。According to the test board 13 of this embodiment, this test board 1
3 comprises a substrate 15 made of soda lime glass, and a reflective film 17 formed on the thin film pattern 16 and on the exposed surface 14a of the substrate 15 to cover the substrate 15.
The test substrate 13 is not easily damaged during cleaning or the like. Furthermore, since this inspection substrate 13 is not easily susceptible to chemical changes such as oxidation, the shape and size of the concave pattern 18 as a pseudo foreign object is also extremely difficult to change. Therefore, this inspection substrate 13 is particularly suitable for use as a detection signal calibration substrate of the above-mentioned substrate surface inspection apparatus. Note that this test substrate 13 is particularly suitable for use as a detection signal calibration substrate, but it goes without saying that it may be used for other purposes.
本発明は、上記した実施例に限定されるものではない。The present invention is not limited to the embodiments described above.
擬似的異物としては、実施例中に示したような凹状パタ
ーン18以外に、第3図(a)及び(b)に示すように
、凸状パターン25であってもよい。この場合、検査用
基板26はエツチングにより基板の表面に凸状に加工さ
れた部分27を有する基板28と、基板28の最上面2
8aにのみ形成された薄膜パターン29と、簿膜パター
ン29上及び基板28の露出表面28bに形成された反
射膜30とを具備している。そして、凸状に加工された
部分27と基板28の最上面28aにのみ形成された薄
膜パターン29とを被覆する反射膜30の部分が、凸状
パターン25を形成する。The pseudo foreign matter may be a convex pattern 25, as shown in FIGS. 3(a) and 3(b), in addition to the concave pattern 18 shown in the embodiment. In this case, the inspection substrate 26 includes a substrate 28 having a convex portion 27 formed on the surface of the substrate by etching, and a top surface 2 of the substrate 28.
The thin film pattern 29 is formed only on the thin film pattern 8a, and the reflective film 30 is formed on the thin film pattern 29 and on the exposed surface 28b of the substrate 28. Then, a portion of the reflective film 30 that covers the convexly processed portion 27 and the thin film pattern 29 formed only on the uppermost surface 28a of the substrate 28 forms a convex pattern 25.
また、実施例中では、基板19の一主表面上に薄膜20
を被着形成し、薄膜20上にポジ型フォトレジスト21
を塗布したが、先ず、基板19の一主表面上にポジ型フ
ォトレジスト21を直接塗布し、次に、このポジ型フォ
トレジスト21を露光し、現像して、第4図に示すよう
に薄膜状のレジストパターン21aを形成し、次に基板
19をエツチングして表面に凹状に加工された部分14
を有する基板31を製作し、その後、反射膜17を被着
形成して、擬似的異物としての凹状パターン18を備え
た検査用基板32を製作してもよい。Further, in the embodiment, a thin film 20 is provided on one main surface of the substrate 19.
A positive photoresist 21 is formed on the thin film 20.
First, a positive photoresist 21 is directly applied onto one main surface of the substrate 19, and then this positive photoresist 21 is exposed and developed to form a thin film as shown in FIG. A resist pattern 21a having a shape is formed, and then the substrate 19 is etched to form a concave portion 14 on the surface.
The inspection substrate 32 having the concave pattern 18 serving as a pseudo foreign object may be manufactured by manufacturing the substrate 31 having the above-mentioned structure, and then depositing the reflective film 17 thereon.
本実施例では、基板19をソーダライムガラスから製作
したが、アルミノシリケートガラス、石英ガラス、アル
ミニウム等の材料から製作してもよく、その寸法及び形
状も必要に応じて適宜決定してよい。また、薄膜20は
クロムを成膜材料として被着形成したが、基板19のエ
ツチングに耐性を有するものであればよく、チタン、ア
ルミニウム。In this embodiment, the substrate 19 is made of soda lime glass, but it may be made of materials such as aluminosilicate glass, quartz glass, aluminum, etc., and its size and shape may be determined as necessary. Although the thin film 20 is formed using chromium as a film-forming material, it may be made of any material that is resistant to etching of the substrate 19, such as titanium or aluminum.
シリコン、タングステン、タンタル、アルミニウム、モ
リブデン等やこれらの酸化物、窒化物、炭化物、硼化物
等の成膜材料から適宜選択して被着形成してもよい。さ
らに、クロムからなる簿膜20に対応したエツチング液
として、硝酸第2セリウムアンモニウムと過塩素酸との
混合水溶液を用いたが、薄膜20の成膜材料として別の
成膜材料を選択した場合、その成膜材料に対応したエツ
チング液を用いればよい。さらに、基板19の一主表面
上と薄膜20との間に、薄膜20と異なる薄膜を介在さ
せてもよい。なお、反射膜をクロムから被着形成し、所
定の工程を経て検査用基板を製作して、これを検出信号
校正用基板として用いて基板表面検査装置を校正すれば
、特にクロム膜上に存在する異物等について基板表面検
査が適確に行われる。The film may be formed by appropriately selecting a film forming material from silicon, tungsten, tantalum, aluminum, molybdenum, etc., or their oxides, nitrides, carbides, borides, etc. Furthermore, although a mixed aqueous solution of ceric ammonium nitrate and perchloric acid was used as the etching solution for the thin film 20 made of chromium, if another film-forming material was selected as the film-forming material for the thin film 20, An etching solution compatible with the film forming material may be used. Furthermore, a thin film different from thin film 20 may be interposed between one main surface of substrate 19 and thin film 20. In addition, if a reflective film is deposited from chromium, an inspection substrate is manufactured through a prescribed process, and the substrate surface inspection device is calibrated using this as a detection signal calibration substrate, it is possible to eliminate the presence of particles on the chromium film. The board surface can be properly inspected for foreign substances and the like.
また、薄膜20及び反射膜11の被着形成方法としては
、スパッタリング法以外に真空蒸着法やイオンブレーテ
ィング法等の成膜方法であってもよく、また、レジスト
はポジ型フォトレジスト以外にネガ型フォトレジストや
ポジ型あるいはネガ型電子線レジスト等のレジストであ
ってもよく、レジストの塗布方法もロールコート法等の
塗布方法を採用してもよい。また、露光方法としてX線
や電子線等による露光方法を採用してもよい。エツチン
グ法としては、実施例中で採用した湿式エツチング法の
他に、スパッタエツチング法やプラズマエツチング法等
の乾式エツチング法を採用してもよい。In addition, as a method for forming the thin film 20 and the reflective film 11, other than the sputtering method, a vacuum evaporation method or an ion blasting method may be used. The resist may be a type photoresist, a positive type or a negative type electron beam resist, and a coating method such as a roll coating method may be used as the resist coating method. Further, as the exposure method, an exposure method using X-rays, electron beams, etc. may be adopted. As the etching method, in addition to the wet etching method employed in the examples, a dry etching method such as a sputter etching method or a plasma etching method may be employed.
本発明の検査用基板によれば、この検査用基板。 According to the test board of the present invention, this test board.
は破損しにくく、さらに擬似的異物としての凹状又は凸
状パターンの形状や大きさが極めて変化しにくい。従っ
て、この検査用基板は、特に基板表面検査装置の検出信
号校正用基板として使用した場合、基板表面検査装置を
常に高精度に校正することができる。is not easily damaged, and furthermore, the shape and size of the concave or convex pattern as a pseudo foreign object is extremely difficult to change. Therefore, especially when this inspection substrate is used as a detection signal calibration substrate of a substrate surface inspection device, the substrate surface inspection device can always be calibrated with high precision.
【図面の簡単な説明】
第1図は本発明の実施例による検査用基板を示す斜視図
、第2図は同実施例による検査用基板の製造方法の各■
稈を示す断面図、第3図は実施例の変形例による検査用
基板を示す図で、同図(a)は検査用基板を示す斜視図
、同図(b)は同図(a)中のX−X線断面図、第4図
は実施例の変形例による検査用基板を示す断面図、第5
図は基板表面検査装置を用いて被検査基板の表面検査を
行う状態を示す図、第6図(a)〜(e)は従来の検査
用基板としての検出信号校正用基板の製造方法の各工程
を示す断面図、及び第6図(f)は従来の検査用基板を
示づ一斜視図である。
13.26.32・・・検査用基板、14・・・凹状に
加工された部分、14a、 28b −−−露出表面、
15゜31・・・凹状に加工された部分を有する基板、
15a 、 28a 、 31a・・・基板の最上面、
16.29・・・薄膜パターン、17.30・・・反射
膜、18・・・凹状パターン、21a・・・薄膜状のレ
ジストパターン、25・・・凸状パターン、27・・・
凸状に加工された部分、28・・・凸状に加工された部
分を有する基板[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a perspective view showing a test board according to an embodiment of the present invention, and FIG. 2 is a perspective view of a test board manufacturing method according to the same embodiment.
FIG. 3 is a cross-sectional view showing the culm, and FIG. 3 is a diagram showing a test board according to a modification of the embodiment. FIG. 3A is a perspective view showing the test board, and FIG. FIG. 4 is a cross-sectional view showing an inspection board according to a modified example of the embodiment, and FIG.
The figure shows a state in which the surface of a substrate to be inspected is inspected using a substrate surface inspection device, and FIGS. 6(a) to 6(e) show various methods of manufacturing a detection signal calibration substrate as a conventional inspection substrate. A sectional view showing the process and FIG. 6(f) are a perspective view showing a conventional test board. 13.26.32... Inspection substrate, 14... Concavely processed portion, 14a, 28b --- Exposed surface,
15゜31...Substrate having a concave portion,
15a, 28a, 31a...the top surface of the substrate,
16.29... Thin film pattern, 17.30... Reflective film, 18... Concave pattern, 21a... Thin film resist pattern, 25... Convex pattern, 27...
Convexly processed portion, 28...Substrate having a convexly processed portion
Claims (1)
工された部分を有する基板と、前記基板のエッチングに
耐性を有し、かつ前記基板の最上面にのみ形成された薄
膜パターンと、前記薄膜パターン上及び前記基板の露出
表面に形成された反射膜とを具備していることを特徴と
する検査用基板。(1) A substrate having a concave or convex portion on the surface of the substrate by etching, a thin film pattern that is resistant to etching of the substrate and formed only on the uppermost surface of the substrate, and the thin film. An inspection substrate comprising a reflective film formed on the pattern and on the exposed surface of the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61049691A JPS62206433A (en) | 1986-03-07 | 1986-03-07 | Substrate for inspection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61049691A JPS62206433A (en) | 1986-03-07 | 1986-03-07 | Substrate for inspection |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62206433A true JPS62206433A (en) | 1987-09-10 |
JPH0471457B2 JPH0471457B2 (en) | 1992-11-13 |
Family
ID=12838206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61049691A Granted JPS62206433A (en) | 1986-03-07 | 1986-03-07 | Substrate for inspection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62206433A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0259651A (en) * | 1988-08-25 | 1990-02-28 | Hoya Corp | Inspection substrate and its manufacture |
KR100694597B1 (en) | 2005-07-28 | 2007-03-13 | 삼성전자주식회사 | Pattern defect detection method in semiconductor device |
JP2009156574A (en) * | 2007-12-25 | 2009-07-16 | Hitachi High-Technologies Corp | Inspection apparatus and inspection method |
-
1986
- 1986-03-07 JP JP61049691A patent/JPS62206433A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0259651A (en) * | 1988-08-25 | 1990-02-28 | Hoya Corp | Inspection substrate and its manufacture |
KR100694597B1 (en) | 2005-07-28 | 2007-03-13 | 삼성전자주식회사 | Pattern defect detection method in semiconductor device |
JP2009156574A (en) * | 2007-12-25 | 2009-07-16 | Hitachi High-Technologies Corp | Inspection apparatus and inspection method |
Also Published As
Publication number | Publication date |
---|---|
JPH0471457B2 (en) | 1992-11-13 |
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