JPS62188156U

JPS62188156U -

Info

Publication number: JPS62188156U
Application number: JP7668586U
Authority: JP
Priority date: 1986-05-21
Filing date: 1986-05-21
Publication date: 1987-11-30

Description

[Brief explanation of drawings]

第１図は本考案による半導体装置の断面図、第
２図および第３図は、従来のトランジスタおよび
本考案によるトランジスタの、それぞれ不純物プ
ロフアイルおよびエネルギバンド構造を示す図、
第４図は本考案の他の一つの実施の態様による半
導体装置の断面図、第５図は従来の半導体装置の
断面図である。１……ｐ⁻型半導体基板、２……ｎ^＋型埋込み
層、３……第１のｎ⁻型エピタキシヤル成長層、
４……ｐ^＋型エミツタ拡散層、５……ｐ^＋型コレ
クタ拡散層、６……ｎ^＋型ベースコンタクト拡散
層、７……第２のｎ⁻型エピタキシヤル成長層、
８……ベース抵抗低下用高濃度突出部、９……ポ
テンシヤルバリヤ用高濃度突出部、Ｅ……エミツ
タ電極、Ｃ……コレクタ電極、Ｂ……ベース電極
。 FIG. 1 is a cross-sectional view of a semiconductor device according to the present invention, and FIGS. 2 and 3 are diagrams showing impurity profiles and energy band structures of a conventional transistor and a transistor according to the present invention, respectively.
FIG. 4 is a sectional view of a semiconductor device according to another embodiment of the present invention, and FIG. 5 is a sectional view of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1...p ^- type semiconductor substrate, 2...n ⁺ -type buried layer, 3...1st n ^- type epitaxial growth layer,
4... p ⁺ type emitter diffusion layer, 5... p ⁺ type collector diffusion layer, 6... n ⁺ type base contact diffusion layer, 7... second n ^- type epitaxial growth layer,
8...High concentration protrusion for lowering base resistance, 9...High concentration protrusion for potential barrier, E...Emitter electrode, C...Collector electrode, B...Base electrode.

Claims

[Claims for Utility Model Registration] (a) an emitter diffusion layer of a first conductivity type; (b) a collector diffusion layer of a first conductivity type located laterally apart from the emitter diffusion layer; (c) the emitter diffusion layer. surrounding the first layer;
a base region of a second conductivity type opposite to the conductivity type; (d) a base contact diffusion layer of a second conductivity type located laterally apart from the emitter diffusion layer; (e) the emitter diffusion layer and the collector diffusion layer; (f) a heavily doped buried layer of a second conductivity type buried below the layer and the base contact diffusion layer; and (f) a portion of the heavily doped buried layer that faces the emitter diffusion layer and the base contact diffusion layer. A semiconductor device comprising a high-concentration protrusion protruding from the substrate toward the diffusion layer thereof.