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JPS62184447U - - Google Patents

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Publication number
JPS62184447U
JPS62184447U JP7181286U JP7181286U JPS62184447U JP S62184447 U JPS62184447 U JP S62184447U JP 7181286 U JP7181286 U JP 7181286U JP 7181286 U JP7181286 U JP 7181286U JP S62184447 U JPS62184447 U JP S62184447U
Authority
JP
Japan
Prior art keywords
pressure
diaphragm
case
introduction path
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7181286U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7181286U priority Critical patent/JPS62184447U/ja
Publication of JPS62184447U publication Critical patent/JPS62184447U/ja
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図ないし第5図は本考案の実施例に係り、
第1図は本考案の実施例を示す半導体圧力センサ
ーの断面図であり、第2図は第一の変形例を示す
半導体圧力センサーの断面図であり、第3図は第
二の変形例を示す半導体圧力センサーの断面図で
あり、第4図は本考案の半導体圧力センサーを使
用した電子腕時計の平面図、第5図は第4図にお
けるB―B断面図である。第6図ないし第8図は
従来例に係るものであり、第6図は従来例を示す
半導体圧力センサーの断面図であり、第7図はシ
リコンダイヤフラム等の拡大断面図であり、第8
図はシリコン基板に形成されているホイーストン
ブリツジ回路図である。 5……キヤン、12,15,16……半導体圧
力センサー、13……防水性繊維膜、4b……シ
リコンダイヤフラム。
1 to 5 relate to embodiments of the present invention,
FIG. 1 is a sectional view of a semiconductor pressure sensor showing an embodiment of the present invention, FIG. 2 is a sectional view of a semiconductor pressure sensor showing a first modification, and FIG. 3 is a sectional view of a semiconductor pressure sensor showing a second modification. FIG. 4 is a plan view of an electronic wristwatch using the semiconductor pressure sensor of the present invention, and FIG. 5 is a sectional view taken along line BB in FIG. 4. 6 to 8 are related to conventional examples, FIG. 6 is a cross-sectional view of a semiconductor pressure sensor showing the conventional example, FIG. 7 is an enlarged cross-sectional view of a silicon diaphragm, etc., and FIG.
The figure is a Wheatstone bridge circuit diagram formed on a silicon substrate. 5... Can, 12, 15, 16... Semiconductor pressure sensor, 13... Waterproof fiber membrane, 4b... Silicon diaphragm.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 外部圧力を検出するダイヤフラムと、このダイ
ヤフラムを内部に収納し前記ダイヤフラムへ圧力
を導入する圧力導入路が設けられたケースと、こ
のケースの前記圧力導入路に取り付けられた防水
性繊維膜とを備えてなる圧力センサー。
A diaphragm that detects external pressure, a case that accommodates the diaphragm and is provided with a pressure introduction path that introduces pressure to the diaphragm, and a waterproof fiber membrane attached to the pressure introduction path of the case. pressure sensor.
JP7181286U 1986-05-15 1986-05-15 Pending JPS62184447U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7181286U JPS62184447U (en) 1986-05-15 1986-05-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7181286U JPS62184447U (en) 1986-05-15 1986-05-15

Publications (1)

Publication Number Publication Date
JPS62184447U true JPS62184447U (en) 1987-11-24

Family

ID=30914704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7181286U Pending JPS62184447U (en) 1986-05-15 1986-05-15

Country Status (1)

Country Link
JP (1) JPS62184447U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001165799A (en) * 1999-10-28 2001-06-22 Motorola Inc Component of physical sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001165799A (en) * 1999-10-28 2001-06-22 Motorola Inc Component of physical sensor

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