JPS62183191A - Header for semiconductor element - Google Patents
Header for semiconductor elementInfo
- Publication number
- JPS62183191A JPS62183191A JP61025207A JP2520786A JPS62183191A JP S62183191 A JPS62183191 A JP S62183191A JP 61025207 A JP61025207 A JP 61025207A JP 2520786 A JP2520786 A JP 2520786A JP S62183191 A JPS62183191 A JP S62183191A
- Authority
- JP
- Japan
- Prior art keywords
- header
- submount
- pellet
- stem
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000008188 pellet Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 22
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 239000011162 core material Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- CBVWMGCJNPPAAR-HJWRWDBZSA-N (nz)-n-(5-methylheptan-3-ylidene)hydroxylamine Chemical compound CCC(C)C\C(CC)=N/O CBVWMGCJNPPAAR-HJWRWDBZSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体レーザや発光ダイオードと云った発
光性半導体素子の放熱特性を改善し、同時に経済効果を
高めることも可能ならしめる半導体素子用ヘッダに関す
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to a semiconductor device for improving the heat dissipation characteristics of light-emitting semiconductor devices such as semiconductor lasers and light emitting diodes, and at the same time increasing economical effects. Regarding headers.
首記の如き半導体素子における重要な課題の１つに、放
熱効率をいかにして高めるかがある。即ち、発光ダイオ
ード等は、電流駆動による大電力消費素子であるので、
動作中の発熱量が大きく、適切な放熱設計がなされてい
ない場合には、発熱による性能劣化や寿命の短縮、或い
は発光ダイオードペレットの破壊等をも招く恐れがある
。One of the important issues in semiconductor devices such as those mentioned above is how to improve heat dissipation efficiency. In other words, since light emitting diodes and the like are current-driven devices that consume large amounts of power,
The amount of heat generated during operation is large, and if an appropriate heat dissipation design is not made, there is a risk that the heat generated may deteriorate performance, shorten the lifespan, or even destroy the light emitting diode pellet.
ところが、この種の素子は、放熱器の使用が規制される
ことが多く、従って、発光ダイオードを支持するステム
に熱伝導率の高い材料を用いてステムを介しての放熱性
を少しでも良くする必要がある。However, the use of heat sinks for this type of device is often regulated, and therefore it is necessary to improve heat dissipation through the stem by using a material with high thermal conductivity for the stem that supports the light emitting diode. There is a need.
また、ステムと発光ダイオードペレットの熱膨脹係数が
異なると、発熱時の膨張差によって、発光ダイオードペ
レットに、そのペレットの性能劣化を助長し、更には破
壊の原因ともなる無用のストレスが加わる。従って、ス
テム材は、熱膨脹係数が発光ダイオードペレットのそれ
とできるだけ近似したものであることが要求される。Further, if the thermal expansion coefficients of the stem and the light emitting diode pellet are different, the difference in expansion during heat generation adds unnecessary stress to the light emitting diode pellet, which promotes deterioration in the performance of the pellet and may even cause destruction. Therefore, the stem material is required to have a coefficient of thermal expansion as close as possible to that of the light emitting diode pellet.
本出願人は、発光ダイオードペレットがＧａＡｓ。The applicant claims that the light emitting diode pellet is made of GaAs.
ＧａＰ、ＧａＳｂのいずれかから成る場合、上記２つの
要求に応える材料としては、熱伝導性に優れ、かつ、熱
膨脹係数が５．０〜８．５ ×１０−’ ａｓ／ ０１
１℃の範囲にあるＷ、ＭｏもしくはＷ −Ｍ ｏ合金に
Ｃｕを均一に含有させた合金が望ましいことを見い出し
、第５図に示すように、発光ダイオードペレット１を取
付けるためのサブマウント２をステム３上に備えるヘッ
ダにおいて、サブマウント又はサブマウントとステムの
双方を上述の合金で形成することを特願昭５８−１０４
６９３号によって提案した。同図の４はＦｅ−Ｎｉ系の
リード線、５はＡｕ又はｋｌのボンディングワイヤ、６
はガラス等の封止絶縁材である。When made of either GaP or GaSb, a material that meets the above two requirements has excellent thermal conductivity and a coefficient of thermal expansion of 5.0 to 8.5 x 10-' as/01
We found that it is preferable to use W, Mo, or W-Mo alloy containing Cu uniformly in the temperature range of 1°C, and as shown in FIG. In the header provided on the stem 3, the submount or both the submount and the stem are made of the above-mentioned alloy.
It was proposed by No. 693. In the figure, 4 is a Fe-Ni lead wire, 5 is an Au or KL bonding wire, and 6 is a Fe-Ni lead wire.
is a sealing insulating material such as glass.
しかしながら、この構造で素子の良好な放熱性と経済性
を同文させることは困難である。このことは、第５図の
ヘッダにおいて、サブマウント２の材料をＷにＣｕの含
有されたものとし、ステム３にサブマウントと同一材料
を用いた場合〔これを（ａ）とする〕と、Ｆｅ−Ｎｉ系
材料を用いた場合〔これを（ｂ）とする〕のヘッダコス
トとそれに相対させたペレットの温度上昇を比較した第
６図から明らかである。即ち、（ａ）は放熱性に優れる
反面、高価な材料の使用量が増えるためコストが高くつ
き、一方（ｂ）は、（ａ）と正反対でコストは下がるが
放熱性が悪くなる。However, with this structure, it is difficult to achieve good heat dissipation and economic efficiency of the element. This means that in the header shown in FIG. 5, if the material of the submount 2 is W containing Cu, and the same material as the submount is used for the stem 3 [this is referred to as (a)], This is clear from FIG. 6, which compares the header cost in the case of using Fe--Ni material (this is referred to as (b)) and the temperature rise of the pellet relative to the header cost. That is, although (a) has excellent heat dissipation properties, it increases the cost due to the increased amount of expensive materials used, while (b), which is the complete opposite of (a), reduces costs but has poor heat dissipation properties.
この発明は、上記に鑑みてなされたもので、素子用ヘッ
ダの放熱性と経済性を同時に高めることを目的としてい
る。This invention was made in view of the above, and aims to simultaneously improve the heat dissipation performance and economical efficiency of an element header.
上記の目的を達成するため、この発明は、複数本のリー
ド線が一体化されたステム上に上述した如き材料から成
るサブマウントを備え、そのサブマウント上にＧａＡｓ
、ＧａＰ、Ｇａｒｂ、ＩｎＰ のいずれかから成る発光
ダイオードペレットが取付けられる半導体素子用ヘッダ
において、ペレット取付面と相対した上記サブマウント
の他面に、上記複数本のリード線の中の１本の片方の端
面を、直接又は良伝熱性材料を介して接触させている。In order to achieve the above object, the present invention includes a submount made of the above-mentioned material on a stem in which a plurality of lead wires are integrated, and GaAs on the submount.
, GaP, Garb, or InP, in which one of the plurality of lead wires is attached to the other surface of the submount opposite to the pellet mounting surface. The end faces of the two are in contact with each other directly or through a material with good heat conductivity.
この構造によれば、ステムに伝熱性の決してよいとは云
えない安価な材料を用いても、サブマウントとそれに接
したリード線に伝熱性の高い材料を使えば、その両者を
通じてペレットの生じた熱を外部に逃がすことができ、
良好な放熱性の確保、ヘッダコストの引下げを同時に実
現することが可能になる。According to this structure, even if the stem is made of an inexpensive material that does not have good heat conductivity, if the submount and the lead wire in contact with it are made of a material with high heat conductivity, pellets can be formed through both of them. Allows heat to escape to the outside,
It becomes possible to ensure good heat dissipation and reduce header costs at the same time.
第１図のヘッダは、サブマウント２がＷ −Ｃｕ合金か
ら成り、この上に上述したＧａＡｓ、ＧａＰ。In the header shown in FIG. 1, the submount 2 is made of a W--Cu alloy, and the above-mentioned GaAs and GaP are applied thereon.
Ｇａｒｂｌ １ｎＰのいずれかから成るペレット１が取
付けられる。A pellet 1 consisting of either Garbl 1nP is attached.
ペレット１の熱膨脹係数は、５．３〜６．９Ｘ１０’ｃ
Ｉｌ／Ｃ１１℃程度であるので、サブマウントのＷ −
Ｃｕ合金として、熱膨脹係数が先に述べた５、０〜８．
５ＸＩＯＣ１ｌ／Ｑ１℃の範囲にあるものを選択すれば
、熱膨張差によるペレット１への大きなストレスの作用
が回避される。The thermal expansion coefficient of pellet 1 is 5.3~6.9X10'c
Since Il/C is about 11°C, the W − of the submount
As a Cu alloy, the coefficient of thermal expansion is 5, 0 to 8, as described above.
By selecting a material in the range of 5XIOC1l/Q1°C, large stress on the pellet 1 due to the difference in thermal expansion can be avoided.
ステム３は、ヘッダのコスト削減のために、Ｆｅ−Ｎｉ
系の材料で形成しである。このステムのサブマウント直
下には、リード線挿入孔７が貫通して設けられており、
ステムに一体化される複数本（図は２本）のリード線４
の中の１本（図ではこれを４３で示す）は、一部がその
孔７に挿入されて片方の端面が、サブマウント２のペレ
ット取付面と相対した他面に接触せしめられている。Stem 3 is made of Fe-Ni to reduce header cost.
It is made of a similar material. Directly below the submount of this stem, a lead wire insertion hole 7 is provided to pass through.
Multiple lead wires (two in the figure) 4 integrated into the stem
One of the rods (indicated by 43 in the figure) is partially inserted into the hole 7, and one end surface is brought into contact with the other surface of the submount 2 facing the pellet mounting surface.
リード線４ａには、熱伝導率の高い線、例えばＣｕ８０
％、Ｆｅ２Ｏ％のカッパーブライ線を使用する。また、
この線４ａは、第２図に拡大して示すように、ステム３
に対し、銀鑞８で接着したり、プレス加工で機械的に固
定したりして、電気的に導通するように一体化する。こ
の後に、孔７内に残される隙間は、素子の気密封止性を
高めるため、鑞材やガラス等で埋めてもよい。The lead wire 4a is made of a wire with high thermal conductivity, for example, Cu80.
%, Fe2O% copperbli wire is used. Also,
This line 4a is connected to the stem 3 as shown in an enlarged view in FIG.
On the other hand, they are integrated so as to be electrically conductive by adhering them with silver solder 8 or mechanically fixing them by press working. After this, the gap left in the hole 7 may be filled with a solder material, glass, etc. to improve the hermetic sealing of the element.
なお、リード線４ａとサブマウントの接触面間には、銀
鑞８等が薄く介在されていてもよい。Note that a thin layer of silver solder 8 or the like may be interposed between the contact surface of the lead wire 4a and the submount.
封止絶縁材６を介してステム３に一体化されるもう一方
のリード線４ｂは、４ａと同一材料でもよいが、ヘッダ
コストを考えればＦｅ−Ｎｉ系の材料から成るものが望
ましい。The other lead wire 4b, which is integrated with the stem 3 via the sealing insulating material 6, may be made of the same material as the lead wire 4a, but in consideration of the header cost, it is preferably made of a Fe--Ni material.
素子用ヘッダを以上の構成とすると、ペレットの発した
熱を迅速に外部に導くことができる。When the element header has the above configuration, the heat generated by the pellet can be quickly guided to the outside.
即ち、第３図は、半導体素子が自由空間にある場合と、
リード線の先端が無限大ヒートシンク上に接続されてい
る場合の２例について、ペレットの温度上昇を計算し、
比較したグラフであって、この図より、放熱は、空間へ
輻射等を利用して行うよりも、物体を介しての熱伝導に
よって行う方が有利であり、熱伝導による放熱経路の形
成要素であるサブマウント、ステム、リード線等の熱伝
導を高めることの有効性が確認できる。That is, FIG. 3 shows the case where the semiconductor element is in free space, and
Calculate the temperature rise of the pellet for two cases where the tip of the lead wire is connected to an infinite heat sink,
This is a comparison graph, and this figure shows that it is more advantageous to dissipate heat by conduction through an object than by using radiation into space, and that heat conduction is the element that forms the heat dissipation path. The effectiveness of increasing the heat conduction of certain submounts, stems, lead wires, etc. can be confirmed.
この発明では、発熱体であるペレット１の接したサブマ
ウント２が熱伝導率の高い材料から成り、このサブマウ
ントにこれも熱伝導率の高いリード線が接しているので
、ステムの伝熱性が充分でなくても放熱特性が高められ
る。また、そのためにステムに安価な材料を使うことも
可能になる。第４図は、この発明のヘッダのコスト及び
それに相対させたペレットの温度上昇を第６図のデータ
と対比して示したもので、（Ｃ）で示すこの発明のヘッ
ダは、放熱性の面では（ａ）の特徴が、経済面では（ｂ
）の特徴が活かされる。In this invention, the submount 2 in contact with the pellet 1, which is a heating element, is made of a material with high thermal conductivity, and the lead wire, which also has high thermal conductivity, is in contact with this submount, so that the heat conductivity of the stem is improved. Even if it is not sufficient, the heat dissipation characteristics can be improved. This also makes it possible to use cheaper materials for the stem. Figure 4 shows the cost of the header of the present invention and the relative temperature rise of the pellets in comparison with the data in Figure 6. So, the characteristics of (a) are economically (b)
) characteristics are utilized.
以上述べたように、この発明によれば、サブマウントに
リード線の１本を接触させ、発光ダイオードペレットの
発した熱を、共に良伝熱性のサブマウントとそれに接し
たリード線の順に伝えて外部に導くので、ステムに安価
な材料を使って高い放熱効果を得ることができ、また、
サブマウントの熱膨脹係数が発光ダイオードペレットの
それに近似しているため、発光ダイオードペレットを熱
膨張差によるストレスから保護できると云う効果が得ら
れる。As described above, according to the present invention, one of the lead wires is brought into contact with the submount, and the heat generated by the light emitting diode pellet is transmitted to the submount, both of which have good heat conductivity, and to the lead wire in contact with the submount. Since it is led to the outside, it is possible to use inexpensive materials for the stem and obtain a high heat dissipation effect.
Since the coefficient of thermal expansion of the submount is close to that of the light emitting diode pellet, the effect of protecting the light emitting diode pellet from stress due to the difference in thermal expansion can be obtained.
第１図は、この発明の一実施例を示す断面図、第２図は
その鎖線枠部分の拡大断面図、第３図は放熱経路の違い
によるペレットの温度上昇を比較したグラフ、第４図は
この発明のヘッダのコストとそれに相対させたペレット
の温度上昇を従来のヘッダと比較して示すグラフ、第５
図は従来ヘッダの断面図、第６図は、第５図のヘッダの
ステム材料を変えたときのコストとそれに相対させたペ
レットの温度上昇を比較したグラフである。
１・・・発光ダイオードペレット、２・・・サブマウン
ト、３・・・ステム、４ａ・・・サブマウントに接した
リード線、４ｂ・・・４ａとは別のリード線、５・・・
ボンディングワイヤ、６・・・封止絶縁材、７・・・リ
ード線挿入孔、８・・・銀鑞。Fig. 1 is a sectional view showing an embodiment of the present invention, Fig. 2 is an enlarged sectional view of the part framed by chain lines, Fig. 3 is a graph comparing the temperature rise of pellets due to differences in heat radiation paths, and Fig. 4. is a graph showing the cost of the header of the present invention and the temperature rise of the pellet relative to the cost of the header of the present invention compared to the conventional header, No. 5
The figure is a sectional view of a conventional header, and FIG. 6 is a graph comparing the cost and temperature rise of pellets when the stem material of the header of FIG. 5 is changed. DESCRIPTION OF SYMBOLS 1... Light emitting diode pellet, 2... Submount, 3... Stem, 4a... Lead wire in contact with submount, 4b... Lead wire different from 4a, 5...
Bonding wire, 6... Sealing insulating material, 7... Lead wire insertion hole, 8... Silver solder.
Claims (3)
導率が高く、かつ、熱膨脹係数が発光ダイオードペレッ
トのそれに近似したサブマウントを備え、そのサブマウ
ント上にＧａＡｓ、ＧａＰ、ＧａＳｂ、ＩｎＰのいずれ
かから成る発光ダイオードペレットが取付けられる半導
体素子用ヘッダにおいて、ペレット取付面と相対した上
記サブマウントの他面に、上記複数本のリード線の中の
１本の片方の端面を、直接又は良伝熱性材料を介して接
触させたことを特徴とする半導体素子用ヘッダ。(1) A submount with high thermal conductivity and a coefficient of thermal expansion similar to that of a light emitting diode pellet is provided on a stem in which multiple lead wires are integrated, and GaAs, GaP, GaSb, In a header for a semiconductor device to which a light emitting diode pellet made of one of InP is attached, one end surface of one of the plurality of lead wires is directly connected to the other surface of the submount opposite to the pellet mounting surface. Or a header for a semiconductor element, characterized in that the header is brought into contact with a material having good heat conductivity.
れた材料から成り、このサブマウントに接するリード線
は、芯材が鉄のカッパープライ線であることを特徴とす
る特許請求の範囲第（１）項記載の半導体素子用ヘッダ
。(2) The submount is made of a material containing tungsten and copper, and the lead wire in contact with the submount is a copper ply wire with a core material of iron. ) A header for semiconductor devices as described in item 2.
、鉄のそれを２０％とした線である特許請求の範囲第（
２）項記載の半導体素子用ヘッダ。(3) The copper ply wire has a copper cross-sectional area ratio of 80%
, Claim No. (
2) The header for semiconductor elements described in item 2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025207A JPS62183191A (en) | 1986-02-06 | 1986-02-06 | Header for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025207A JPS62183191A (en) | 1986-02-06 | 1986-02-06 | Header for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62183191A true JPS62183191A (en) | 1987-08-11 |
Family
ID=12159507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61025207A Pending JPS62183191A (en) | 1986-02-06 | 1986-02-06 | Header for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62183191A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359403A (en) * | 2001-05-31 | 2002-12-13 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2007013093A (en) * | 2005-07-01 | 2007-01-18 | Epitech Technology Corp | Light emitting diode |
-
1986
- 1986-02-06 JP JP61025207A patent/JPS62183191A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359403A (en) * | 2001-05-31 | 2002-12-13 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2007013093A (en) * | 2005-07-01 | 2007-01-18 | Epitech Technology Corp | Light emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7759144B2 (en) | Package for a semiconductor light emitting device | |
| US5489801A (en) | Quad flat package heat slug composition | |
| US5933327A (en) | Wire bond attachment of a integrated circuit package to a heat sink | |
| TWI395345B (en) | LED lamp with low thermal resistance | |
| EP1169735A4 (en) | Semiconductor radiation emitter package | |
| US20090175035A1 (en) | Light source module and method for manufacturing same | |
| US4320412A (en) | Composite material for mounting electronic devices | |
| CN112399699A (en) | Heat-dissipating substrate and method of making the same | |
| US20100102354A1 (en) | Light emitting diode package | |
| US20220173006A1 (en) | Chip package, semiconductor arrangement, method of forming a chip package, and method of forming a semiconductor arrangement | |
| JP5031136B2 (en) | Semiconductor laser device | |
| JP6642749B1 (en) | Semiconductor laser light source device | |
| JPS62183191A (en) | Header for semiconductor element | |
| KR100716865B1 (en) | Semiconductor Package | |
| JPH0637217A (en) | Semiconductor device | |
| JPH0424879B2 (en) | ||
| JP2005032937A (en) | Semiconductor laser device | |
| JPS63318193A (en) | Sub-mount for optical semiconductor | |
| US20050286592A1 (en) | Semiconductor laser array device | |
| JP7343842B2 (en) | Semiconductor laser light source device | |
| JPS61234588A (en) | Submount for optical semiconductor element | |
| KR970000217B1 (en) | Heat sink integrated semiconductor device | |
| CN100502068C (en) | Packaging structure of light emitting diode | |
| KR101321101B1 (en) | Substrate and semiconductor device package using the same | |
| KR100266699B1 (en) | Heat spreader for semiconductor package |