JPS62183033A - Production of magnetic recording body - Google Patents
Production of magnetic recording bodyInfo
- Publication number
- JPS62183033A JPS62183033A JP2305886A JP2305886A JPS62183033A JP S62183033 A JPS62183033 A JP S62183033A JP 2305886 A JP2305886 A JP 2305886A JP 2305886 A JP2305886 A JP 2305886A JP S62183033 A JPS62183033 A JP S62183033A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- recording body
- protective film
- film
- ferromagnetic metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 21
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 19
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 239000011737 fluorine Substances 0.000 claims abstract description 7
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000006116 polymerization reaction Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 15
- 239000000178 monomer Substances 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 6
- 238000005498 polishing Methods 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、強磁性金属薄膜を磁気記録層とする磁気記録
体の製造方法に係り、特に磁気記録層上に保護膜を形成
する方法に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a method of manufacturing a magnetic recording body using a ferromagnetic metal thin film as a magnetic recording layer, and particularly relates to a method of forming a protective film on the magnetic recording layer. .
強磁性金属薄膜を磁気記録層とする磁気記録体は、金属
ディスク基体あるいはテープ基体上に、強磁性金属材料
を真空蒸着するとか、樹脂マトリックスに強磁性金属材
料を分散させたエマルジョンをスピンコードすることに
より製造される。強磁性金属薄膜は高密度記録にすぐれ
た特性を有するが、ヘッドの接触によって摩耗や損傷を
受けやすく、また空気中で酸化され、特性変化がおこる
等の欠点がある。Magnetic recording materials with a ferromagnetic metal thin film as a magnetic recording layer are produced by vacuum-depositing a ferromagnetic metal material onto a metal disk or tape substrate, or by spin-coding an emulsion in which a ferromagnetic metal material is dispersed in a resin matrix. Manufactured by Although ferromagnetic metal thin films have excellent characteristics for high-density recording, they have drawbacks such as being susceptible to wear and damage due to head contact, and being oxidized in the air, causing changes in characteristics.
このため強磁性金属薄膜上にカーボン等の保護膜を形成
することにより耐久性、耐食性を改善することが提案さ
れているが、カーボン保護膜は若干の通気性があり耐食
性改善に難点があることから、最近、プラズマ重合を利
用して樹脂の保護膜を形成することが検討されている。For this reason, it has been proposed to improve durability and corrosion resistance by forming a protective film such as carbon on a ferromagnetic metal thin film, but the carbon protective film has some air permeability, making it difficult to improve corrosion resistance. Recently, it has been considered to form a resin protective film using plasma polymerization.
従来のプラズマ重合による保護膜の形成では、モノマー
として主に炭化水素系の物質が用いられている。しかし
これによる保護膜は強磁性金属薄膜との付着強度が不充
分であり、CS S (Contact 5tart/
5top)テストなどの評価によれば耐摩耗性がよくな
かった。In the conventional formation of a protective film by plasma polymerization, hydrocarbon-based substances are mainly used as monomers. However, the adhesion strength of this protective film to the ferromagnetic metal thin film is insufficient, and CS S (Contact 5tart/
According to evaluations such as 5top) tests, the wear resistance was poor.
c問題点の解決手段とその作用〕
本発明は、上記のような従来技術の問題点を解決するた
めになされたもので、種々の実験の結果から、フッ素を
含む有機ケイ素化合物のプラズマ重合による保護膜が、
耐久性、均一性にすぐれることを見出し、完成に至った
ものである。c) Means for solving problems and their effects] The present invention has been made to solve the problems of the prior art as described above, and based on the results of various experiments, it has been found that The protective film is
It was discovered that it has excellent durability and uniformity, and was completed.
本発明をtrt気ディスクの製造に適用すると、次のよ
うなプロセスとなる。まず基体となるアルミニウム基板
上に、Ni −Pなどの化学メッキ層を付着させ、研磨
仕上げなどの後処理を施したのち、その表面に物理的ま
たは化学的手法により強磁性金属薄膜を形成する。次に
これを第1図に示すような対極型プラズマ重合装置にセ
ントする。When the present invention is applied to manufacturing a TRT air disk, the process will be as follows. First, a chemical plating layer such as Ni--P is deposited on an aluminum substrate serving as a base, and after a post-treatment such as polishing is performed, a ferromagnetic metal thin film is formed on the surface by a physical or chemical method. Next, this is sent to a counter electrode type plasma polymerization apparatus as shown in FIG.
第1図において、■は基体表面に強磁性金属薄膜を形成
した磁気ディスク本体、2A・2Bは対向する電極、3
はペルジャー、4はテーブル、5はへルジャー3内を真
空にする真空ポンプ、6は絶対真空計、7は電極2A・
2Bに接続された高周波電源、8はモノマーガス源、9
はキャリヤーガス源、lOはペルジャー3内のモノマー
供給ノズルである。In FIG. 1, ■ is a magnetic disk body with a ferromagnetic metal thin film formed on the surface of the base, 2A and 2B are opposing electrodes, and 3
is a Pelger, 4 is a table, 5 is a vacuum pump that vacuums the inside of the Pelger 3, 6 is an absolute vacuum gauge, and 7 is an electrode 2A.
High frequency power supply connected to 2B, 8 monomer gas source, 9
is the carrier gas source and lO is the monomer supply nozzle in the Pelger 3.
このような装置内にフッ素を含む有機ケイ素化合物(七
ツマ−)の蒸気を導入して、プラズマ重合を行い、強磁
性金属薄膜上に保護膜を形成する。Vapor of an organosilicon compound (silicon compound) containing fluorine is introduced into such an apparatus to perform plasma polymerization to form a protective film on the ferromagnetic metal thin film.
このようにして得られる保護膜は、ヘッドの引っ掻きに
対する耐久性にすくれ、強磁性金属薄膜への付着強度も
大きいものである。このような性能が得られるのは、推
論の域をでないが、モノマー分子中のケイ素を含む部分
が先に重合して強磁性金属薄膜と強固に結合し、フッ素
を含む部分があとから重合し膜の表層を形成するからと
考えられる。The protective film thus obtained has poor durability against head scratching and has high adhesion strength to the ferromagnetic metal thin film. The reason such performance is achieved is that the silicon-containing portion of the monomer molecule polymerizes first and forms a strong bond with the ferromagnetic metal thin film, and the fluorine-containing portion polymerizes later. This is thought to be because it forms the surface layer of the membrane.
本発明で用いるフッ素を含む有機ケイ素化合物は、常圧
下で観測される沸点が80〜200 ’Cに分布してお
り、常温常圧下での屈折率が1.35〜1.55の範囲
にある。この化合物は一般に、
S ikCt Ht* CI n○pF、S、N。The fluorine-containing organosilicon compound used in the present invention has a boiling point observed under normal pressure ranging from 80 to 200'C, and a refractive index at normal temperature and pressure ranging from 1.35 to 1.55. . This compound generally has the following formula: SikCt Ht* CI n○pF,S,N.
なる形で記述でき、本発明に用いられる物質は、k=1
〜4.1 = 3〜16、m = 4〜30、n=0〜
5、p=2〜5、q=3〜20、r=O〜5、S=O〜
5、で表される。なお減圧下での沸点は3〜20mmH
gの圧力下で90〜150℃に入る。これらの範囲に入
る具体的な物質としては、
S i C* Ha Cl z F s 、S i
Ca H? Cl t F s 、5iC4HqOi
FiS、 5iCsHqF*O7、S i Cb H
a F q CI x、 S i Cb HI 3 F
302 %S i Cb HIjF y Oz
、S i Cq H? CI z F q 、S i
C、lH+ s F z○s 、 SiC,211
,。F2.81□Ca H+ s F 3 N O、S
i * CIo Hz s F :+ Ot 、5
isC+zHz+FqOz 、 51aC+bHze
F+□04.3iC684F+5C1i、 5iCaF
+3H+ff0z 、S i C+。Ha F It
CI x、S i CIs H+ x F 1q O
3、S i C+ + Hq Cl z F I ?、
SiC+tH+*F+t○2 、などがある。The substance used in the present invention can be described in the form k=1
〜4.1=3〜16, m=4〜30, n=0〜
5, p=2~5, q=3~20, r=O~5, S=O~
5. The boiling point under reduced pressure is 3 to 20 mmH.
Entering 90-150 °C under a pressure of g. Specific substances falling within these ranges include S i C* Ha Cl z F s , S i
Ca H? Cl t F s , 5iC4HqOi
FiS, 5iCsHqF*O7, S i Cb H
a F q CI x, S i Cb HI 3 F
302%S i Cb HIjF y Oz
, S i Cq H? CI z F q , S i
C, lH+ s F z○s , SiC, 211
,. F2.81□Ca H+ s F 3 N O, S
i * CIo Hz s F :+ Ot , 5
isC+zHz+FqOz, 51aC+bHz
F+□04.3iC684F+5C1i, 5iCaF
+3H+ff0z, S i C+. Ha F It
CI x, S i CIs H+ x F 1q O
3. S i C+ + Hq Cl z F I ? ,
SiC+tH+*F+t○2, etc.
これらを単独で、またはエチレン、エタン、ブタン、プ
ロパン、ブチレンなどの有機ガスか、アルゴン、ヘリウ
ム、窒素などの不活性ガスと混合して、ペルジャー内に
真人し、内圧を0.005〜3Torr望ましくは0.
01〜1.5 TorrO間でプラズマ重合を行う。These are placed alone or mixed with an organic gas such as ethylene, ethane, butane, propane, or butylene, or an inert gas such as argon, helium, or nitrogen in a Pel jar, and the internal pressure is desirably 0.005 to 3 Torr. is 0.
Plasma polymerization is performed between 01 and 1.5 TorrO.
高周波によりプラズマ重合させる場合、高周波出力と電
極面積の大きさから、エネルギー密度を0.01−4
W/am2望ましくは0.05〜3 W/cm2の範囲
に入るようにする。高周波電源の出力は30〜500W
、望ましくは50〜250Wの間に保たれ、できるだけ
南出力下で行う方が、硬い保護膜を得るのに都合がよい
。高周波電源は通常、13.56 MHzの発振周波数
をもち、可変容量タイプのマツチングボックスを備えて
いる。When plasma polymerization is performed using high frequency, the energy density is set at 0.01-4 depending on the high frequency output and the size of the electrode area.
W/am2 is preferably within the range of 0.05 to 3 W/cm2. The output of the high frequency power supply is 30~500W
, preferably maintained between 50 and 250 W, and it is more convenient to perform the heating under as low a power as possible in order to obtain a hard protective film. The high frequency power supply usually has an oscillation frequency of 13.56 MHz and is equipped with a variable capacitance type matching box.
プラズマ重合の反応時間は七ツマ−の種類、流量および
電極配置によって左右されるものであるが、通常望まし
くは10秒〜10分、さらに望ましくは30秒〜3分で
所望の膜厚が得られるように装置条件、モノマー条件を
選ぶ。The reaction time of plasma polymerization depends on the type of polymer, flow rate, and electrode arrangement, but usually the desired film thickness can be obtained preferably in 10 seconds to 10 minutes, and more preferably in 30 seconds to 3 minutes. Select equipment conditions and monomer conditions accordingly.
こうして得られる重合膜の厚さは通常10〜1000人
に入る。特に好ましくは80〜600 人に分布するも
のである。膜厚が薄すぎると耐久性、耐食性が得られに
<<、逆に膜が厚すぎるとスペーシングロスが大きくな
り、記録、読出し特性に悪影響をもたらす。The thickness of the polymer film thus obtained is usually between 10 and 1000. Particularly preferably, it is distributed among 80 to 600 people. If the film thickness is too thin, durability and corrosion resistance cannot be obtained. On the other hand, if the film is too thick, spacing loss increases, which adversely affects recording and reading characteristics.
磁気ディスク本体の温度は膜の成長に大きな影ツを及ぼ
す。低い温度の方が膜の成長速度を大きくすることがで
き、強磁性金属薄膜の表面温度は望ましくは50〜10
0 ’Cに保たれる。The temperature of the magnetic disk body has a large effect on film growth. Lower temperatures can increase the growth rate of the film, and the surface temperature of the ferromagnetic metal thin film is preferably 50 to 10
It is kept at 0'C.
モノマーを導入する際は、加熱配管を用いて高沸点モノ
マーを4人することが望ましい。When introducing monomers, it is desirable to introduce four high-boiling point monomers using heating piping.
重合膜の厚さの変動は出来るだけ小さくすることが望ま
しく、そのためにはプラズマ重合中に磁気ディスク本体
を回転させたり、振動させたりすること、あるいは電極
を等速度で移動させること等が有効である。It is desirable to minimize the variation in the thickness of the polymerized film, and to achieve this, it is effective to rotate or vibrate the magnetic disk body during plasma polymerization, or to move the electrodes at a constant speed. be.
プラズマ重合用高周波装置にはインダクタンス型とキャ
パシタンス型とがあるが、いずれの装置によっても保護
膜を形成することができる。High frequency devices for plasma polymerization include inductance type and capacitance type, and a protective film can be formed using either device.
なお本発明は主に磁気ディスクの製造に適するが、その
他の磁気記録体、例えば磁気テープ、フロッピーディス
ク、磁気カードなどの製造にも同様に適用できるもので
ある。Although the present invention is mainly suitable for manufacturing magnetic disks, it is equally applicable to manufacturing other magnetic recording media such as magnetic tapes, floppy disks, magnetic cards, etc.
第1図に示す対極型プラズマ重合装置を用いて直径5!
ンの磁気ディスク本体の表面に、プラズマ重合法により
保護膜を形成した。直径130 mmのステンレス電極
を使用し、電極間の距離を25mmに保った。高周波電
源の周波数は13.56 MHz 、供給電力は100
W (反射電力1.5W)とした。Diameter 5! using the opposite electrode type plasma polymerization apparatus shown in Figure 1!
A protective film was formed on the surface of the main body of the magnetic disk by plasma polymerization. Stainless steel electrodes with a diameter of 130 mm were used, and the distance between the electrodes was kept at 25 mm. The frequency of the high frequency power supply is 13.56 MHz, and the supplied power is 100 MHz.
W (reflected power 1.5 W).
モノマーとして3・3・3−トリフルオロプロピルテト
ラクロロシランを55℃加熱下で60cc/分の割合で
供給すると共に、キャリヤーガスとして純アルゴンを8
0°C加熱下で供給した。ヘルジャー内の圧力は0.1
Torrとした。3,3,3-trifluoropropyltetrachlorosilane was supplied as a monomer at a rate of 60 cc/min under heating at 55°C, and pure argon was supplied as a carrier gas at a rate of 8 cc/min.
It was supplied under heating at 0°C. The pressure inside the Herjar is 0.1
Torr.
反応時間を変えて種々の膜厚のものを得、触針式膜厚測
定装置により膜厚を測定した。いずれの保護膜もピンホ
ールのない均一なものであった。Various film thicknesses were obtained by changing the reaction time, and the film thicknesses were measured using a stylus-type film thickness measuring device. Both protective films were uniform and free of pinholes.
また得られた磁気ディスクにつき、C8S試験機により
C8Sサイクルを測定した。Further, the C8S cycle of the obtained magnetic disk was measured using a C8S tester.
以上の結果を第1表に示す。なお比較例として、エチレ
ンをプラズマ重合して得られる炭化水素系保護膜をかけ
た磁気ディスクと、カーボン保護膜をかけた磁気ディス
クのC8S特性を併記した。The above results are shown in Table 1. As a comparative example, the C8S characteristics of a magnetic disk coated with a hydrocarbon protective film obtained by plasma polymerizing ethylene and a magnetic disk coated with a carbon protective film are also shown.
本発明方法によれば、プラズマ重合による保護膜であり
ながら、カーボン保護膜とほぼ同等のC8S耐久性を得
ることができる。According to the method of the present invention, although the protective film is formed by plasma polymerization, it is possible to obtain C8S durability almost equivalent to that of a carbon protective film.
第1表
〔発明の効果〕
以上説明したように本発明によれば、強磁性金属薄膜上
にプラズマ重合による保護膜を形成するに際し、モノマ
ーとしてフッ素含有有機ケイ素化合物を使用することに
より、耐久性にすぐれた磁気記録体を製造することがで
きる。Table 1 [Effects of the Invention] As explained above, according to the present invention, durability is improved by using a fluorine-containing organosilicon compound as a monomer when forming a protective film on a ferromagnetic metal thin film by plasma polymerization. A magnetic recording medium with excellent properties can be manufactured.
第1図は本発明に使用するプラズマ重合装置の一例を示
す説明図である。
l−磁気ディスク本体、2A・2B〜電極、3〜ペルジ
ヤー、4〜テーブル、5〜真空ポンプ、6〜絶対真空計
、7〜高周波電源、8〜モノマーガス源、9〜キヤリヤ
ーガス源、10〜モノマー供給ノズル。FIG. 1 is an explanatory diagram showing an example of a plasma polymerization apparatus used in the present invention. l-Magnetic disk body, 2A/2B-electrode, 3-perzier, 4-table, 5-vacuum pump, 6-absolute vacuum gauge, 7-high frequency power supply, 8-monomer gas source, 9-carrier gas source, 10-monomer supply nozzle.
Claims (1)
をフッ素含有有機ケイ素化合物のモノマー蒸気中にさら
してプラズマ重合を行い、上記強磁性金属薄膜の表面に
上記化合物のプラズマ重合による保護膜を形成すること
を特徴とする磁気記録体の製造方法。A ferromagnetic metal thin film is formed on a substrate, the ferromagnetic metal thin film is exposed to a monomer vapor of a fluorine-containing organosilicon compound to perform plasma polymerization, and a protective film of the above compound is formed on the surface of the ferromagnetic metal thin film by plasma polymerization. A method of manufacturing a magnetic recording body, the method comprising: forming a magnetic recording body;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2305886A JPS62183033A (en) | 1986-02-06 | 1986-02-06 | Production of magnetic recording body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2305886A JPS62183033A (en) | 1986-02-06 | 1986-02-06 | Production of magnetic recording body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62183033A true JPS62183033A (en) | 1987-08-11 |
Family
ID=12099832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2305886A Pending JPS62183033A (en) | 1986-02-06 | 1986-02-06 | Production of magnetic recording body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62183033A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0224885A (en) * | 1988-07-14 | 1990-01-26 | Tdk Corp | Member for medium |
WO1998041744A1 (en) | 1997-03-17 | 1998-09-24 | Alliedsignal Inc. | Dual poppet wastegate with dual coaxial shafts |
US8336309B2 (en) | 2006-05-31 | 2012-12-25 | Cummins Turbo Technologies Limited | Turbocharger with dual wastegate |
US20200040812A1 (en) * | 2017-02-16 | 2020-02-06 | Ihi Corporation | Turbocharger |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6116028A (en) * | 1984-06-30 | 1986-01-24 | Hitachi Maxell Ltd | Magnetic recording medium and its production |
-
1986
- 1986-02-06 JP JP2305886A patent/JPS62183033A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6116028A (en) * | 1984-06-30 | 1986-01-24 | Hitachi Maxell Ltd | Magnetic recording medium and its production |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0224885A (en) * | 1988-07-14 | 1990-01-26 | Tdk Corp | Member for medium |
WO1998041744A1 (en) | 1997-03-17 | 1998-09-24 | Alliedsignal Inc. | Dual poppet wastegate with dual coaxial shafts |
US5996348A (en) * | 1997-03-17 | 1999-12-07 | Alliedsignal Inc. | Dual poppet wastegate with dual coaxial shafts |
US8336309B2 (en) | 2006-05-31 | 2012-12-25 | Cummins Turbo Technologies Limited | Turbocharger with dual wastegate |
US20200040812A1 (en) * | 2017-02-16 | 2020-02-06 | Ihi Corporation | Turbocharger |
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