JPS6216218A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS6216218A JPS6216218A JP15398685A JP15398685A JPS6216218A JP S6216218 A JPS6216218 A JP S6216218A JP 15398685 A JP15398685 A JP 15398685A JP 15398685 A JP15398685 A JP 15398685A JP S6216218 A JPS6216218 A JP S6216218A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- thin film
- magnetic head
- film magnetic
- mgo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、薄膜磁気ヘッドに係り、特に偏摩耗防止に好
適な保護膜を形成した薄膜磁気ヘッドに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thin film magnetic head, and more particularly to a thin film magnetic head on which a protective film suitable for preventing uneven wear is formed.
薄膜磁気ヘッドは、耐衝撃、耐湿、耐環境、耐摩耗、等
のための保護膜が形成される。このような保護膜の材料
として非磁性セラミックス5i02あるいはAL201
を用いるのが特開昭56−179925号公報、特開昭
58−26508号公報、特開昭58−161122号
公報などに示されている。A protective film is formed on the thin film magnetic head to provide impact resistance, moisture resistance, environment resistance, wear resistance, and the like. Non-magnetic ceramics 5i02 or AL201 can be used as a material for such a protective film.
The use of this method is shown in Japanese Patent Application Laid-open Nos. 56-179925, 58-26508, and 1987-161122.
しかし、90系アモルファス又はセンダストコア材を用
いた薄膜磁気ヘッドに対し、電子ビーム蒸着等で形成す
るMIoと5i02の混合物が適度な硬さと熱膨張係数
を有し、かつ厚い膜形成ができることは知られていなか
った。However, it is known that a mixture of MIo and 5i02 formed by electron beam evaporation has an appropriate hardness and coefficient of thermal expansion, and can form a thick film for thin-film magnetic heads using 90 series amorphous or Sendust core materials. It wasn't.
本発明の目的は、薄膜磁気ヘッドの偏摩耗の発生を効果
的に抑制できる保護膜を形成した薄膜磁気ヘッドを提供
するにある。An object of the present invention is to provide a thin film magnetic head on which a protective film is formed that can effectively suppress the occurrence of uneven wear of the thin film magnetic head.
この目的を達成するために、本発明は、薄膜磁気ヘッド
の保護膜をMgOと8i02を適当な割合いで混ぜた混
合物(化合部)で形成した点に特徴がある。In order to achieve this object, the present invention is characterized in that the protective film of the thin film magnetic head is formed of a mixture (compound portion) of MgO and 8i02 in an appropriate ratio.
以下、本発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第1図(α) 、 (b)は薄膜磁気ヘッドの構造説明
図で、(α)は断面図で示す1例、(,6)は斜視図で
示す他側である。FIGS. 1(α) and 1(b) are structural explanatory diagrams of a thin film magnetic head, where (α) is one example shown in a cross-sectional view, and (, 6) is the other side shown in a perspective view.
図面(α)において、1は基板、4はギャップ材、5は
保護膜、21 、22は磁気コア、51は信号コイルで
あり、同図(1))において、1は基板、2は磁・気コ
ア、5は信号コイル、4はギャップ材、は保護膜、52
は巻線穴である。In the drawing (α), 1 is a substrate, 4 is a gap material, 5 is a protective film, 21 and 22 are magnetic cores, and 51 is a signal coil. air core, 5 is a signal coil, 4 is a gap material, is a protective film, 52
is the winding hole.
これらの薄膜磁気ヘッドは、いずれも鏡面研摩された基
板1に磁気コア2 、21 、22のコア材や、非磁性
絶縁材、信号コイル51となる導体(同図(α)の場合
)等を順次成膜およびエツチングを繰返して所定の形状
にパタニングする。そし℃最後に保護膜5を形成して薄
膜磁気ヘッドは完成する。なお、同図(b)の場合は信
号コイル5の布設が行なわれる。In each of these thin film magnetic heads, the core materials of the magnetic cores 2, 21, 22, non-magnetic insulating material, a conductor that becomes the signal coil 51 (in the case of (α) in the figure), etc. are mounted on a mirror-polished substrate 1. Film formation and etching are sequentially repeated to pattern into a predetermined shape. Finally, a protective film 5 is formed to complete the thin film magnetic head. In addition, in the case of FIG. 6(b), the signal coil 5 is installed.
! これらの処理は、IC等の製造において用い
られているフォトエツチングプロセスにより行なわれる
ので、高精度に、かつ一枚の基板から多数のへラドチッ
プを得ることができ、性能の゛バラツキが少なく、量産
化に優れている。! These treatments are performed using the photo-etching process used in the manufacture of ICs, etc., so a large number of Herad chips can be obtained from a single substrate with high precision, and there is little variation in performance, making it possible to mass-produce. Excellent for compatibility.
ところで、保護膜5は、■外部衝撃からの保護、■耐湿
、耐環境、■耐摩耗性、等の目的で設けられるものであ
るが、この保護膜5はギャップ材4の近傍(すなわちギ
ャップ近傍)に位置するので、テープタッチの良否を左
右する重・要なヘッド構成材となる。保護膜5の厚みは
、・テープ摺動性、耐偏摩耗の点から20〜40μm程
度を必要とする。この位の厚みKなると、一般的には累
積された膜応力により膜が剥離するか、膜に亀裂が生じ
る等の問題が起き、薄膜磁気へ。By the way, the protective film 5 is provided for the purposes of (1) protection from external impact, (2) moisture resistance, environmental resistance, (4) abrasion resistance, etc., and this protective film 5 is provided in the vicinity of the gap material 4 (i.e., in the vicinity of the gap). ), it is an important component of the head that determines the quality of the tape touch. The thickness of the protective film 5 is required to be approximately 20 to 40 μm in terms of tape sliding properties and uneven wear resistance. When the thickness K reaches this level, problems such as film peeling or film cracking generally occur due to accumulated film stress, leading to thin film magnetism.
ラドに適用できる成膜が困難であった。この問題を解決
するには膜の内部応力を極力小さくする必要があり、ヘ
ッド構成材料の熱膨張係数を合せる事が有効な手段であ
る。しかしながら、金属のコア材CCO系アモルファス
、センダスト。It was difficult to form a film that could be applied to RAD. To solve this problem, it is necessary to reduce the internal stress of the film as much as possible, and an effective means is to match the thermal expansion coefficients of the materials forming the head. However, the metal core material CCO-based amorphous, Sendust.
N1Fa系金属、等)の熱膨張係数は100XIQ−’
1/℃以上であるのに対し、一般のセラミックスは熱膨
張係数が小さく、100 X 10−’ 1/υ 以下
である。従って、コア材と保護膜との熱膨張係数を一致
させるのは困難である。また、ZrO2゜At20 g
はセラミックスの中で比較的熱膨張係数の大きい材料で
あるが、コア材に対して硬度が高いため偏摩耗を起す、
ZrO,Kついては、更に融点が高く成膜しにくいと
い)欠点もある。The thermal expansion coefficient of N1Fa metal, etc.) is 100XIQ-'
1/[deg.]C or more, whereas general ceramics have a small thermal expansion coefficient of 100 x 10-' 1/υ or less. Therefore, it is difficult to match the thermal expansion coefficients of the core material and the protective film. Also, ZrO2゜At20 g
is a material with a relatively large coefficient of thermal expansion among ceramics, but its hardness relative to the core material causes uneven wear.
ZrO and K also have the disadvantage that they have higher melting points and are difficult to form into films.
これに対し、MρはZrO2と同様に融点が約・280
0でと高いが、SiO2との混合物(化合物)では融点
がさがると共に適度な硬さくHV=450〜850)と
熱膨張係数を持つことがわかった。On the other hand, like ZrO2, Mρ has a melting point of approximately ・280
However, it was found that a mixture (compound) with SiO2 lowers the melting point and has moderate hardness (HV=450 to 850) and thermal expansion coefficient.
第2図は保護膜材であるMgOと5in2の組成比によ
る熱膨張係数の変化をCo−Nb系アモルファス及びセ
ンダスト膜をそれぞれコア材とした場合について示した
図である。同図に示したヱうに、同一の組成比であって
も、成膜条件等により熱膨張係数はやや変化することが
わかる。FIG. 2 is a diagram showing the change in thermal expansion coefficient depending on the composition ratio of MgO and 5in2, which are protective film materials, when Co--Nb amorphous and sendust films are used as core materials, respectively. As shown in the figure, it can be seen that even if the composition ratio is the same, the coefficient of thermal expansion slightly changes depending on the film forming conditions and the like.
また、Co −Nb系アモルファス及びセンダスト膜上
に電子ビーム蒸着装置で約50μmの保護膜を形成した
場合の亀裂と剥離の発生なみ【、その良否を○Δ×の順
で同図に示した。同図において、0を良、×を否とし、
Δまでを有効と考えると、Co −Nb系アモルファス
では5iftの混合比が10へ70%、センダストでは
10〜60チで底膜できることがわかる。The figure also shows the occurrence of cracks and peeling when a protective film of about 50 μm was formed on Co--Nb-based amorphous and sendust films using an electron beam evaporation device. In the same figure, 0 is good, × is bad,
Considering that up to Δ is effective, it can be seen that a bottom film can be formed at a mixing ratio of 5ift of 10 to 70% for Co--Nb-based amorphous, and 10 to 60% for sendust.
この結果から、コア材と保護膜の材料(保護・膜材)の
熱膨張係数の差が凡そ40〜50x+0−’1A以上あ
ると保護膜は亀裂又は剥離を生じるとみることができる
。From this result, it can be concluded that if the difference in thermal expansion coefficient between the core material and the protective film material (protection/film material) is approximately 40 to 50x+0-'1 A or more, the protective film will crack or peel.
第2図に示されたOの組成で成膜した保護膜の内部応力
は凡そI X 10’ ely九/−前後で、SiOよ
単体に比べて略々1桁以上小さい事がわかった。It was found that the internal stress of the protective film formed with the O composition shown in FIG. 2 was approximately I x 10' ely9/-, which was approximately one order of magnitude smaller than that of SiO alone.
上記MgOと8z02の混合物(化合物)の保護膜形成
により、従来みられた偏摩耗がなくなり、ヘッドの信頼
性が大幅に向上した。By forming a protective film of the above-mentioned mixture (compound) of MgO and 8z02, the uneven wear seen in the past was eliminated, and the reliability of the head was significantly improved.
上記本発明による保護膜の特性は、電子ビーム蒸着装置
で形成した膜の検討結果であるが、スパッタ装置で形成
したMl、Oと5z02の混合物(化合物)の保護膜で
も同様の結果が得られた。The above characteristics of the protective film according to the present invention are the results of examination of a film formed using an electron beam evaporation device, but similar results were obtained with a protective film formed using a mixture (compound) of Ml, O, and 5Z02 using a sputtering device. Ta.
第5図は磁気コアのコア材としてCo −Nb系アモル
ファスを用い、保護膜として本発明によるMgOと5i
n2の混合物(化合物)を用いて成膜・した薄膜磁気ヘ
ッドの摩耗特性の一例を示した図であって、磁気コアと
保護膜の両者は略々同程度の摩耗特性を示しており、偏
摩耗の発生はみられない、
また1、 MgOと8i0.以外の第5物質を小量添加
、することによって、本発明の効果が損なわれることは
ない。更に、MgOと5ho2の混合物(化合物)を形
成する前に、Cr 、 Ti等の密着層を形成してもよ
い。Figure 5 shows that Co-Nb amorphous is used as the core material of the magnetic core, and MgO and 5i according to the present invention are used as the protective film.
FIG. 2 is a diagram showing an example of the wear characteristics of a thin film magnetic head formed using a mixture (compound) of No wear was observed. 1. MgO and 8i0. The effect of the present invention is not impaired by adding a small amount of the fifth substance other than the above. Furthermore, an adhesion layer of Cr, Ti, etc. may be formed before forming the mixture (compound) of MgO and 5ho2.
なお、MgOとSiO2の組成比につい【は、一部。In addition, regarding the composition ratio of MgO and SiO2, [ is a part.
酸素が欠乏状態であってもさしつかえない。Even if there is a lack of oxygen, there is no problem.
更に、本発明によるMgOとS io2の混合物((l
。Furthermore, the mixture of MgO and S io2 according to the invention ((l
.
合物)の膜はテープ摺動性がよ(、コア材との相性がよ
いので、保護膜材に限らず、コア材近−傍の構成材とし
て充分有効に使えるものである。The membrane of the compound) has good tape sliding properties and is compatible with the core material, so it can be used effectively not only as a protective film material but also as a constituent material near the core material.
以上説明l−だように、本発明によれば、熱膨張係数が
コア材に近く、硬度も適当で、20μm以上の保護膜が
得られ、偏摩耗もなく、かつテープ摺動性の良好な薄膜
磁気ヘッドを得ることができ、上記従来技術の欠点を除
いて優れた機能の薄膜磁気ヘッドを提供することができ
る。As explained above, according to the present invention, the thermal expansion coefficient is close to that of the core material, the hardness is appropriate, a protective film of 20 μm or more can be obtained, there is no uneven wear, and the tape has good sliding properties. A thin film magnetic head can be obtained, and a thin film magnetic head with excellent functions can be provided by eliminating the drawbacks of the above-mentioned prior art.
第1図(α1 、 (b)は薄膜磁気ヘッドの構造を説
明−する構造説明図、第2図は保護膜材の組成比による
熱膨張係数の変化を示す図、第5図は本発明により保護
膜を用いた薄膜磁気ヘッドの摩耗特性の一例を示す図で
ある。
1・・・基板、2 、21 、22・・・磁気コア、5
.51・・・信号コイル、4・・・ギャップ材、5・・
・保護膜。
代理人弁理士 小 川 勝 男′
菓1 図
第2図
第 3 図Fig. 1 (α1, (b) is a structural explanatory diagram explaining the structure of a thin film magnetic head, Fig. 2 is a diagram showing changes in the thermal expansion coefficient depending on the composition ratio of the protective film material, and Fig. 5 is a diagram illustrating the structure of the thin film magnetic head. It is a diagram showing an example of wear characteristics of a thin film magnetic head using a protective film. 1... Substrate, 2, 21, 22... Magnetic core, 5
.. 51...Signal coil, 4...Gap material, 5...
·Protective film. Representative Patent Attorney Katsoo Ogawa Figure 1 Figure 2 Figure 3
Claims (2)
を成膜およびエッチングにより所定形状に形成してなる
薄膜磁気ヘッドにおいて、前記保護膜の組成がMgOと
SiO_2から成ることを特徴とする薄膜磁気ヘッド。(1) A thin film magnetic head comprising at least a magnetic core, a gap material, and a protective film formed in a predetermined shape on a substrate by film formation and etching, characterized in that the composition of the protective film is composed of MgO and SiO_2. Thin film magnetic head.
おいて、前記MgOとSiO_2の組成比をSiO_2
を濃度にして10〜70%としたことを特徴とする薄膜
磁気ヘッド。(2) In the thin film magnetic head according to claim (1), the composition ratio of MgO and SiO_2 is set to SiO_2.
A thin film magnetic head characterized in that the concentration is 10 to 70%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60153986A JPH0664710B2 (en) | 1985-07-15 | 1985-07-15 | Thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60153986A JPH0664710B2 (en) | 1985-07-15 | 1985-07-15 | Thin film magnetic head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6216218A true JPS6216218A (en) | 1987-01-24 |
JPH0664710B2 JPH0664710B2 (en) | 1994-08-22 |
Family
ID=15574409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60153986A Expired - Fee Related JPH0664710B2 (en) | 1985-07-15 | 1985-07-15 | Thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0664710B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061576A (en) * | 1988-12-27 | 1991-10-29 | Fuji Photo Film Co., Ltd. | Thin film magnetic head |
EP0752700A2 (en) * | 1995-07-05 | 1997-01-08 | Sony Corporation | Complex type thin film magnetic head and production method thereof |
US6356419B1 (en) | 1999-07-23 | 2002-03-12 | International Business Machines Corporation | Antiparallel pinned read sensor with improved magnetresistance |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6124007A (en) * | 1984-07-11 | 1986-02-01 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
-
1985
- 1985-07-15 JP JP60153986A patent/JPH0664710B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6124007A (en) * | 1984-07-11 | 1986-02-01 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061576A (en) * | 1988-12-27 | 1991-10-29 | Fuji Photo Film Co., Ltd. | Thin film magnetic head |
EP0752700A2 (en) * | 1995-07-05 | 1997-01-08 | Sony Corporation | Complex type thin film magnetic head and production method thereof |
EP0752700A3 (en) * | 1995-07-05 | 1998-01-14 | Sony Corporation | Complex type thin film magnetic head and production method thereof |
US6356419B1 (en) | 1999-07-23 | 2002-03-12 | International Business Machines Corporation | Antiparallel pinned read sensor with improved magnetresistance |
Also Published As
Publication number | Publication date |
---|---|
JPH0664710B2 (en) | 1994-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |