JPS62160781U - - Google Patents
Info
- Publication number
- JPS62160781U JPS62160781U JP4909186U JP4909186U JPS62160781U JP S62160781 U JPS62160781 U JP S62160781U JP 4909186 U JP4909186 U JP 4909186U JP 4909186 U JP4909186 U JP 4909186U JP S62160781 U JPS62160781 U JP S62160781U
- Authority
- JP
- Japan
- Prior art keywords
- shaft
- cavity
- tightens
- welds
- inserts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010687 lubricating oil Substances 0.000 claims 1
Landscapes
- Gears, Cams (AREA)
Description
第１図は断面図、第２図は縦断面図、第３図は
永久機関の側面図。
１はシヤフト、２は空洞、３はシヤフト、４は
溶着、５は歯車、６はナツト、７はボルト、８は
歯車、９は割ピン、１０は取りつけ部分、１１は
空気容器、１２はシリンダー、１１′は排油装置
、１３は空気移動管、１４は連係板、１５は内側
レール。
Fig. 1 is a sectional view, Fig. 2 is a longitudinal sectional view, and Fig. 3 is a side view of the perpetual motion machine. 1 is a shaft, 2 is a cavity, 3 is a shaft, 4 is a weld, 5 is a gear, 6 is a nut, 7 is a bolt, 8 is a gear, 9 is a cotter pin, 10 is a mounting part, 11 is an air container, 12 is a cylinder , 11' is an oil draining device, 13 is an air transfer pipe, 14 is a linking plate, and 15 is an inner rail.
Claims (1)
端にシヤフト３を入れてネジをしめシヤフト１と
シヤフト３を溶着をして空洞２の中に潤滑油が入
らないようにした永久機関のシヤフト。 This perpetual motion machine shaft has a cavity 2 in a shaft 1, inserts a shaft 3 into both ends of the shaft 1, tightens a screw, and welds the shaft 1 and shaft 3 to prevent lubricating oil from entering the cavity 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4909186U JPS62160781U (en) | 1986-04-01 | 1986-04-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4909186U JPS62160781U (en) | 1986-04-01 | 1986-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62160781U true JPS62160781U (en) | 1987-10-13 |
Family
ID=30871222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4909186U Pending JPS62160781U (en) | 1986-04-01 | 1986-04-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62160781U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7902052B2 (en) | 2003-02-19 | 2011-03-08 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
| US7906414B2 (en) | 2002-08-19 | 2011-03-15 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
| US8278659B2 (en) | 1996-05-28 | 2012-10-02 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
| US8796159B2 (en) | 2003-09-16 | 2014-08-05 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| US8871022B2 (en) | 2007-11-21 | 2014-10-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
| US8889569B2 (en) | 2009-11-24 | 2014-11-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral soldification |
| US9012309B2 (en) | 2007-09-21 | 2015-04-21 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
| US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
-
1986
- 1986-04-01 JP JP4909186U patent/JPS62160781U/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8278659B2 (en) | 1996-05-28 | 2012-10-02 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
| US8680427B2 (en) | 1996-05-28 | 2014-03-25 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
| US8859436B2 (en) | 1996-05-28 | 2014-10-14 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
| US7906414B2 (en) | 2002-08-19 | 2011-03-15 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
| US8883656B2 (en) | 2002-08-19 | 2014-11-11 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
| US7902052B2 (en) | 2003-02-19 | 2011-03-08 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
| US8796159B2 (en) | 2003-09-16 | 2014-08-05 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| US9466402B2 (en) | 2003-09-16 | 2016-10-11 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| US9012309B2 (en) | 2007-09-21 | 2015-04-21 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
| US8871022B2 (en) | 2007-11-21 | 2014-10-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
| US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
| US8889569B2 (en) | 2009-11-24 | 2014-11-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral soldification |
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