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JPS62160726A - Laser trimming apparatus for optical device - Google Patents

Laser trimming apparatus for optical device

Info

Publication number
JPS62160726A
JPS62160726A JP61003224A JP322486A JPS62160726A JP S62160726 A JPS62160726 A JP S62160726A JP 61003224 A JP61003224 A JP 61003224A JP 322486 A JP322486 A JP 322486A JP S62160726 A JPS62160726 A JP S62160726A
Authority
JP
Japan
Prior art keywords
trimming
wavelength
measurement
laser beam
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61003224A
Other languages
Japanese (ja)
Inventor
Yasuo Fujiwara
藤原 康男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61003224A priority Critical patent/JPS62160726A/en
Publication of JPS62160726A publication Critical patent/JPS62160726A/en
Pending legal-status Critical Current

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  • Laser Beam Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To increase working efficiency, by setting the wavelength of a light for measurement in a region wherein the effective quantum efficiency of a photo semiconductor element to be worked is high, and setting the wavelength of a laser beam in the region wherein the effective quantum efficiency of a photo semiconductor element to be worked is very low. CONSTITUTION:The center wavelength of a light for measurement lambda1, is selected at a point where the effective quantum efficiency is high, and the wavelength of a laser beam, lambda2, is selected at a point wherein the effective quantum efficiency is very low. A laser trimming operation is performed by radiating simultaneously the light for measurement from a measuring light source 4 and the laser beam from a laser oscillator 3, and measurement is available at any time. Trimming and measurement can be performed, if necessary, at the same time. The wavelength of a laser beam for trimming is thus selected at a point wherein the effective quantum efficiency of an element to be worked is very low, so that the measurement can be performed at any time independently of the trimming operation. The element-stabilizing time until measurement after trimming is, of course, unnecessitated, and operation efficiency is increased.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は光半導体素子(光デバイス)のレーザトリミ
ング装置の改良に関するものであるり〔従来の技術〕 第1図は従来から用いられている光デバイスのレーザ)
 IJ ミング装置を示す模式構成図で、(1)は被加
工光半導体素子(被加工素子)、(2)は素子搭載台、
(3)は加工用レーザビームを発生するレーザ発振器、
(4)は被加工素子(1)の特性測定のだめの光を供給
する測定用光源、(5)及び(6)はそれぞれレーザビ
ーム及び測定用光を被加工素子(1)K指向させるミラ
ー、(7)は対物レンズである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an improvement of a laser trimming device for an optical semiconductor element (optical device). optical device laser)
A schematic configuration diagram showing an IJ mining device, (1) shows an optical semiconductor element to be processed (processed element), (2) shows an element mounting table,
(3) is a laser oscillator that generates a laser beam for processing;
(4) is a measurement light source that supplies light for measuring the characteristics of the processed element (1); (5) and (6) are mirrors that respectively direct the laser beam and measurement light to the processed element (1) K; (7) is an objective lens.

この装置は光半導体素子(1)の製造に当って素子(1
)を構成する抵抗部または金属リンク部等を部分的にレ
ーザ発振器(3)からのレーザビームによって加熱除去
して、素子(1)の機能を所望状態にするもので、目標
値に正しく到達させるために当該被加工素子(1)に対
する測定を行なわねばならないフ被加工素子(1)が光
デバイスであるので、レーザビームによってトリミング
加工中は特性の測定はできない。第4図は従来のレーザ
) IJ ミング操作のシーケンスを示す図で、トリミ
ングに用いるレーザ発振器(3)からのビーム波長に配
置がなされておらず、被加工素子(1)がこれに感応す
るので、この間は測定用光源(4)による特性の測定は
できない。
This device is used to manufacture an optical semiconductor device (1).
) is partially heated and removed by the laser beam from the laser oscillator (3) to bring the function of the element (1) into the desired state, thereby correctly reaching the target value. Since the processed element (1) is an optical device, its characteristics cannot be measured during the trimming process using a laser beam. Figure 4 is a diagram showing the sequence of a conventional laser IJ trimming operation, in which the beam wavelength from the laser oscillator (3) used for trimming is not aligned and the processed element (1) is sensitive to this. During this period, the characteristics cannot be measured using the measurement light source (4).

従って、測定期間とトリミング期間とは時間的に直列に
していた。
Therefore, the measurement period and the trimming period were temporally serial.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の光デバイスのレーザトリミング装置では上述のよ
うに、トリミングと被加工素子の特性測定とを時間的に
ずらせて行なわねばならず、更に、レーザビームはエネ
ルギーが大きいので、トリミングを停止しても、その直
後は被加工素子はディスターブされており、ある期間の
安定化時間を置いて測定しなければならず作業効率が悪
いという問題点があった。
As mentioned above, in conventional laser trimming equipment for optical devices, trimming and characteristic measurement of the processed element must be performed with a time lag.Furthermore, since the laser beam has high energy, even if trimming is stopped, Immediately after that, the device to be processed is disturbed, and the measurement must be performed after a certain period of stabilization time, resulting in a problem of poor work efficiency.

この発明はこのような問題点を解消するためになされた
もので、光デバイスのレーザトリミングをしながら必要
に応じて特性測定の可能なレーザトリミング装置を提供
することを目的としている。
The present invention has been made to solve these problems, and an object of the present invention is to provide a laser trimming apparatus that can measure characteristics as necessary while laser trimming an optical device.

〔問題点を解決するための手段〕[Means for solving problems]

この発明になる光デバイスのレーザトリミング装置では
トリミング用レーザビームの波長を被加工素子(光デバ
イス)の感度域外の波長にしたものである。
In the laser trimming apparatus for an optical device according to the present invention, the wavelength of the trimming laser beam is set to a wavelength outside the sensitivity range of the processed element (optical device).

〔作用〕[Effect]

この発明では光デバイスのトリミング用レーザビームに
は当該光デバイス動作は影響されないので、レーザトリ
ミングしつつ随時特性測定が可能である。
In this invention, since the operation of the optical device is not affected by the laser beam for trimming the optical device, it is possible to measure the characteristics at any time while performing laser trimming.

〔実施例〕〔Example〕

この発明の一実施例の図示構成自体は第1図に示した従
来から用いているものと同一である。第2図は被加工素
子の実効量子効率とレーザビーム波長及び測定光波長と
の関係を示す線図で、λ1は測定用光の中心波長、λ2
はレーザビームの波長で、測定用光の中心波長λ1は当
然実効量子効率の大きい点に選ぶがレーザビーム波長λ
2は実効量子効率の極めて低い点に選ぶ。例えば被加工
素子がシリコンホトダイオードの場合、測定光波長λ1
はその大助量子効率曲線の中心0.7 )trnに選び
、レーザには1.06メmの波長(λ2)のビームを出
すYAGレーザ装置を用いる。
The illustrated configuration itself of an embodiment of the present invention is the same as the conventional one shown in FIG. Figure 2 is a diagram showing the relationship between the effective quantum efficiency of the processed element, the laser beam wavelength, and the measurement light wavelength, where λ1 is the center wavelength of the measurement light, and λ2
is the wavelength of the laser beam, and the center wavelength λ1 of the measurement light is naturally selected at a point with high effective quantum efficiency, but the laser beam wavelength λ
2 is selected as the point where the effective quantum efficiency is extremely low. For example, if the device to be processed is a silicon photodiode, the measurement light wavelength λ1
is selected to be the center of its large quantum efficiency curve, 0.7 ) trn, and a YAG laser device that emits a beam with a wavelength (λ2) of 1.06 mem is used as the laser.

第3図はこの実施例によるレーザトリミング操作のシー
ケンスを示す図で、測定用光源(4)からの測定光の照
射とレーザ発振器(3)からのレーザビームの照射とを
同時に行なって、随時測定が可能で、必要なればトリミ
ングと測定とを同時だ行なうこともできる。
FIG. 3 is a diagram showing the sequence of laser trimming operations according to this embodiment, in which irradiation of measurement light from the measurement light source (4) and laser beam irradiation from the laser oscillator (3) are performed at the same time to make measurements as needed. It is also possible to perform trimming and measurement at the same time if necessary.

〔発明の効果〕〔Effect of the invention〕

以上説明したようにこの発明ではトリミング用レーザビ
ームの波長を被加工素子の実効量子効率の極めて低い点
に選んだので、トリミング操作と無関係に随時測定が可
能で、勿論従来装置におけるトリミング後の測定までの
素子安定化時間は全く必要なく操作効率が大幅に向上す
る上に操作も簡単になる。
As explained above, in this invention, the wavelength of the laser beam for trimming is selected at a point where the effective quantum efficiency of the processed element is extremely low, so measurements can be performed at any time regardless of the trimming operation, and of course, measurements can be made after trimming using conventional equipment. There is no need for any element stabilization time, which greatly improves operational efficiency and simplifies operation.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明を適用できる従来から存在するレーザ
トリミング装置を示す模式構成図、第2図はこの発明の
一実施例における被加工素子の実効量子効率とレーザビ
ーム波長及び測定光波長との関係を示す線図、第3図は
この実施例によるレザトリミング操作を示すシーケンス
図、第4図はケンス図である。 図において、(1)は被加工素子、(3)はレーザ発振
器、(4)は測定用光源、λ、は測定用光波長、λ2は
レーザビーム波長である。
FIG. 1 is a schematic configuration diagram showing a conventional laser trimming device to which the present invention can be applied, and FIG. 2 is a diagram showing the effective quantum efficiency of a processed element, laser beam wavelength, and measurement light wavelength in an embodiment of the present invention. FIG. 3 is a sequence diagram showing the leather trimming operation according to this embodiment, and FIG. 4 is a can diagram. In the figure, (1) is an element to be processed, (3) is a laser oscillator, (4) is a measurement light source, λ is a measurement light wavelength, and λ2 is a laser beam wavelength.

Claims (1)

【特許請求の範囲】[Claims] (1)被加工光半導体素子をレーザビームによつてトリ
ミング加工するとともに、そのトリミング加工の各所要
段階で測定用光を用いて上記被加工光半導体素子の特性
を測定するものにおいて、上記測定用光の波長は上記被
加工光半導体素子の実効量子効率の高い領域に設定し、 上記レーザビームの波長は上記被加工光半導体素子の実
効量子効率の極めて低い領域に設定したことを特徴とす
る光デバイスのレーザトリミング装置。
(1) In an apparatus that trims an optical semiconductor element to be processed using a laser beam and measures the characteristics of the optical semiconductor element to be processed using measurement light at each required stage of the trimming process, The wavelength of the light is set in a region where the effective quantum efficiency of the optical semiconductor device to be processed is high, and the wavelength of the laser beam is set in a region where the effective quantum efficiency of the optical semiconductor device to be processed is extremely low. Device laser trimming equipment.
JP61003224A 1986-01-09 1986-01-09 Laser trimming apparatus for optical device Pending JPS62160726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61003224A JPS62160726A (en) 1986-01-09 1986-01-09 Laser trimming apparatus for optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61003224A JPS62160726A (en) 1986-01-09 1986-01-09 Laser trimming apparatus for optical device

Publications (1)

Publication Number Publication Date
JPS62160726A true JPS62160726A (en) 1987-07-16

Family

ID=11551474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61003224A Pending JPS62160726A (en) 1986-01-09 1986-01-09 Laser trimming apparatus for optical device

Country Status (1)

Country Link
JP (1) JPS62160726A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218817A (en) * 1991-04-26 1993-06-15 Honda Giken Kogyo Kabushiki Kaisha Method and apparatus of purifying exhaust gas from internal combustion engine
CN1080370C (en) * 1995-05-25 2002-03-06 本田技研工业株式会社 Exhaust emission control device for internal combustion engines
US6534743B2 (en) 2001-02-01 2003-03-18 Electro Scientific Industries, Inc. Resistor trimming with small uniform spot from solid-state UV laser
US6550573B2 (en) 1992-06-02 2003-04-22 Donaldson Company, Inc. Muffler with catalytic converter arrangement, and method
US6951995B2 (en) 2002-03-27 2005-10-04 Gsi Lumonics Corp. Method and system for high-speed, precise micromachining an array of devices
JP2007309710A (en) * 2006-05-17 2007-11-29 Enshu Ltd Method and apparatus for observing fine periodic grooves, processing method and apparatus for processing and processing fine periodic grooves

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218817A (en) * 1991-04-26 1993-06-15 Honda Giken Kogyo Kabushiki Kaisha Method and apparatus of purifying exhaust gas from internal combustion engine
US6550573B2 (en) 1992-06-02 2003-04-22 Donaldson Company, Inc. Muffler with catalytic converter arrangement, and method
US6892854B2 (en) 1992-06-02 2005-05-17 Donaldson Company, Inc. Muffler with catalytic converter arrangement; and method
CN1080370C (en) * 1995-05-25 2002-03-06 本田技研工业株式会社 Exhaust emission control device for internal combustion engines
US6534743B2 (en) 2001-02-01 2003-03-18 Electro Scientific Industries, Inc. Resistor trimming with small uniform spot from solid-state UV laser
US6951995B2 (en) 2002-03-27 2005-10-04 Gsi Lumonics Corp. Method and system for high-speed, precise micromachining an array of devices
US7407861B2 (en) 2002-03-27 2008-08-05 Gsi Group Corporation Method and system for high-speed, precise micromachining an array of devices
JP2007309710A (en) * 2006-05-17 2007-11-29 Enshu Ltd Method and apparatus for observing fine periodic grooves, processing method and apparatus for processing and processing fine periodic grooves

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