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JPS62141788A - Light-emitting diode display device - Google Patents

Light-emitting diode display device

Info

Publication number
JPS62141788A
JPS62141788A JP60282449A JP28244985A JPS62141788A JP S62141788 A JPS62141788 A JP S62141788A JP 60282449 A JP60282449 A JP 60282449A JP 28244985 A JP28244985 A JP 28244985A JP S62141788 A JPS62141788 A JP S62141788A
Authority
JP
Japan
Prior art keywords
emitting diode
light emitting
light
diode element
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60282449A
Other languages
Japanese (ja)
Inventor
Mitsuru Rokunohe
六戸　満
Shoji Usuda
臼田　昭司
Kenjiro Ishihara
石原　健治郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Cable Industries Ltd
Original Assignee
Mitsubishi Cable Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Industries Ltd filed Critical Mitsubishi Cable Industries Ltd
Priority to JP60282449A priority Critical patent/JPS62141788A/en
Publication of JPS62141788A publication Critical patent/JPS62141788A/en
Pending legal-status Critical Current

Links

Classifications

    • H10W72/50—
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F13/00—Illuminated signs; Luminous advertising
    • G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
    • G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5449—
    • H10W72/5522—
    • H10W90/00—

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)

Abstract

PURPOSE:To obtain a uniform and high-luminance light emission as well as to uphold the manufacturing efficiency of a large-size display device by a method wherein the structure of the electrode is optimized in response to an increase in the size of the light-emitting diode element by mounting the light- emitting diode element having a specific large area. CONSTITUTION:The area of the surface of an element 10 is 20mm<2> or layer and also, a surface electrode 11a having a pattern width of 20-200mum is uniform ly formed on the surface of the element 10, and at the same time, the light- emitting diode element 10 having a large area which is a 10-15% of the area of the surface of an area occupation factor element 10 of the surface electrode 11a is mounted. For example, the light-emitting diode element 10 having the element surface set at a 20mm square and formed concentrically with the square-type surface electrode 11a is die-bonded on a stem electrode 21 and the upper end surfaces of a plurality of lead terminals 22 and the surface elec trode 21a are wire-bonded with gold wires 23. The light-emitting diode element 10 wire-bonded in such a way is sealed with a light-transmitting epoxy resin filled in a frame body 24.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は発光ダイオード表示装置に係り、特に、大面積
発光表示に適した発光ダイオード表示装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a light emitting diode display device, and particularly to a light emitting diode display device suitable for large area light emitting display.

（従来の技術） 大面積発光表示用に用いられる従来の発光ダイオード表
示装置の構成例を第８図〜第１１図に基づいて説明する
。(Prior Art) A configuration example of a conventional light emitting diode display device used for a large area light emitting display will be explained based on FIGS. 8 to 11.

第８図は基板への発光ダイオード素子の取り付は状態を
示す部分斜視図、第９図は従来の発光ダイオード表示装
置に搭載される発光ダイオード素子の外観斜視図、第１
０図は従来の発光ダイオード表示装置の断面構造を略示
した断面図、第１１図は従来の発光ダイオード表示装置
の等価回路図である。FIG. 8 is a partial perspective view showing how the light emitting diode element is attached to the substrate, FIG. 9 is an external perspective view of the light emitting diode element mounted on a conventional light emitting diode display device, and FIG.
FIG. 0 is a cross-sectional view schematically showing the cross-sectional structure of a conventional light emitting diode display device, and FIG. 11 is an equivalent circuit diagram of the conventional light emitting diode display device.

第８図に示す従来の発光ダイオード表示装置において、
例えば、プリント配線基板ｌの表面にカソード配線２と
アノード配線３とが形成されている０発光中心部分にあ
るカソード配線２の上には、複数のＧａＰ系の発光ダイ
オード素子４がグイボンディングされている。グイボン
ディングされた各発光ダイオード素子４の表面電極とア
ノード配線３の先端部分との間は、極細の金′＋３５で
ワイヤボンディングされている。なお、Ａｊ！ＧａＡｓ
系の発光ダイオード素子の場合はアノード配線３の上に
グイボンディングされる。In the conventional light emitting diode display device shown in FIG.
For example, a plurality of GaP-based light emitting diode elements 4 are bonded onto the cathode wiring 2 located at the center of light emission where a cathode wiring 2 and an anode wiring 3 are formed on the surface of the printed wiring board l. There is. The surface electrode of each light-emitting diode element 4 that has been wire-bonded is wire-bonded with the tip of the anode wiring 3 using a very fine gold wire 35. In addition, Aj! GaAs
In the case of a light-emitting diode element, it is bonded onto the anode wiring 3.

発光ダイオード素子４は、例えば０．４ｍｍ角程度の比
較的に小さい素子であり、第９図に示すように、素子表
面の略中心位置に、例えば金薄膜よりなる円形状の表面
電極（ボンディングパー／　トともいう）６が形成され
ている。The light emitting diode element 4 is a relatively small element of, for example, about 0.4 mm square, and as shown in FIG. 6 is formed.

そして、第１０図に示すように、発光ダイオード素子４
が組み込まれた基板１の上から、枠体７が取り付けられ
る。枠体７の開口内部には、透過性のエポキシ樹脂８が
充填されている。Then, as shown in FIG. 10, the light emitting diode element 4
The frame body 7 is attached from above the board 1 in which the is installed. The inside of the opening of the frame 7 is filled with a transparent epoxy resin 8.

このようにして形成される発光ダイオード表示装置を駆
動するあたっては、第１１図に示すように、各発光ダイ
オード素子４に電流制限用の抵抗Ｒが接続され、この抵
抗Ｒを介して所定の表示用電圧Ｅが与えられる。To drive the light emitting diode display device formed in this way, a current limiting resistor R is connected to each light emitting diode element 4 as shown in FIG. A display voltage E is applied.

（発明が解決しようとする問題点） しかしながら、上述したように、この種の発光ダイオー
ド表示装置は、多数の発光ダイオード素子をグイボンデ
ィングするため、作業能率が悪いという問題点がある。(Problems to be Solved by the Invention) However, as described above, this type of light emitting diode display device has a problem in that work efficiency is low because a large number of light emitting diode elements are bonded together.

また、各発光ダイオード素子の順方向電圧あるいは発光
輝度に差があると、これを補正するために第１１図に示
した電流制限用の抵抗を可変しなければならないという
煩わしさがある。Furthermore, if there is a difference in the forward voltage or luminance of each light emitting diode element, there is the inconvenience that the current limiting resistor shown in FIG. 11 must be varied in order to correct this difference.

一方、大型表示用の発光ダイオード素子として、第９図
に示した構造の素子をそのまま大型化することも考えら
れる。しかし、このような構造の大型素子は、表面電極
が小さ過ぎると、電流分布が不均一になって発光ムラを
生じる。逆に、表面電極が大き過ぎると、電極による光
の遮断により充分な発光輝度を得ることができなくなる
という不都合を生じる。On the other hand, it is also conceivable that the element having the structure shown in FIG. 9 be made larger as it is as a light emitting diode element for large-sized displays. However, in a large element with such a structure, if the surface electrode is too small, the current distribution becomes non-uniform and uneven light emission occurs. On the other hand, if the surface electrode is too large, a problem arises in that sufficient light emission brightness cannot be obtained due to the blocking of light by the electrode.

本発明は、このような事情に鑑みてなされたものであっ
て、発光ダイオード素子の大型化に伴い電極構造を最適
化して、均一かつ高輝度な発光を得ることができる発光
ダイオード表示装置を提供することを目的としている。The present invention has been made in view of the above circumstances, and provides a light emitting diode display device that can obtain uniform and high brightness light emission by optimizing the electrode structure as light emitting diode elements become larger. It is intended to.

また、本発明の他の目的は、大型の発光ダイオード表示
装置の製造効率の向上にある。Another object of the present invention is to improve the manufacturing efficiency of large-sized light emitting diode display devices.

（問題点を解決するための手段） 本発明は、このような目的を達成するために、次のよう
な構成をとる。(Means for Solving the Problems) In order to achieve the above object, the present invention has the following configuration.

即ち、本発明に係る発光ダイオード表示装置は素子表面
が少なくとも２０ｍｍ”であり、かつ、２０〜２００μ
ｍのパターン幅を有する表面電極が素子表面に均一に形
成されているとともに、前記表面電極の面積占有率が、
素子表面の面積に対して１０〜１５％になる大面積発光
ダイオード素子を搭載してなることを特徴としている。That is, the light emitting diode display device according to the present invention has an element surface of at least 20 mm" and a thickness of 20 to 200 μm.
A surface electrode having a pattern width of m is uniformly formed on the element surface, and the area occupation rate of the surface electrode is
It is characterized by being equipped with a large-area light emitting diode element that is 10 to 15% of the area of the element surface.

（実施例） 以下、本発明を図面に示す実施例に基づいて詳細に説明
する。(Example) Hereinafter, the present invention will be described in detail based on an example shown in the drawings.

第１図は本実施例に係る発光ダイオード表示装置に搭載
される発光ダイオード素子の電極構造の説明図、第２図
は第１図に示した発光ダイオード素子を搭載した発光ダ
イオード表示装置の一実施例の一部破断斜視図である。FIG. 1 is an explanatory diagram of the electrode structure of a light emitting diode element mounted on a light emitting diode display device according to this embodiment, and FIG. 2 is an implementation of a light emitting diode display device equipped with the light emitting diode element shown in FIG. 1. FIG. 2 is a partially cutaway perspective view of an example.

第１図に示す発光ダイオード素子１０は、ｎ　−ＧａＡ
ｓ基板上にＰ型およびＮ型のＡ１ＧａＡｓエピタキシャ
ル成長層を形成した構造を備えている。発光ダイオード
素子１０は、素子表面の面積が少なくとも２０ｍｍ２で
あって、例えば、２０ｍｍ角（表面積４００ｍｍ”）に
設定されている。The light emitting diode element 10 shown in FIG.
It has a structure in which P-type and N-type A1GaAs epitaxial growth layers are formed on an s-substrate. The light emitting diode element 10 has a surface area of at least 20 mm2, for example, 20 mm square (surface area 400 mm'').

発光ダイオード１０の素子表面には、１口」の字形状の
表面電極１１ａが同心状に形成されている。On the element surface of the light-emitting diode 10, surface electrodes 11a each having a shape of "1" are formed concentrically.

表面電極１１ａのパターン幅は２０〜２００μｍに、ま
た、素子表面の面積に対する表面電極１１ａの面積占有
率は１０〜１５％に、それぞれ設定されている。このよ
うな表面電極１１ａは、電流、集中をさけるために、素
子表面に均一に形成される。The pattern width of the surface electrode 11a is set to 20 to 200 μm, and the area occupation rate of the surface electrode 11a to the area of the element surface is set to 10 to 15%. Such surface electrodes 11a are formed uniformly on the element surface in order to avoid current concentration.

このような発光ダイオード素子１０は、例えば、第２図
に示すように、金属性のステム電ｊ５Ａ２１の上にグイ
ボンディングされる。そして、ステム電極２１とは絶縁
分離されている複数のリード端子２２の上端面と、表面
電極１１ａとの間は、金線２３によってワイヤボンディ
ングされている。このとき表面電極１１ａ側のワイヤボ
ンディングは、Ｔ！ｌ流集中を避けるために、それぞれ
分離された表面電極における対向した二ヵ所に行われて
いる。Such a light emitting diode element 10 is, for example, as shown in FIG. 2, bonded onto a metal stem wire j5A21. The upper end surfaces of the plurality of lead terminals 22, which are insulated and separated from the stem electrode 21, and the surface electrode 11a are wire-bonded using a gold wire 23. At this time, the wire bonding on the surface electrode 11a side is T! In order to avoid concentration of current, this is carried out at two opposing locations on separate surface electrodes.

このようにワイヤボンディングされた発光ダイオード素
子１０は、枠体２４内に充填された図示しない透過性の
エポキシ樹脂で封止される。The light emitting diode element 10 wire-bonded in this manner is sealed with a transparent epoxy resin (not shown) filled in the frame 24.

上述したように、素子表面の面積が少なくとも２０ｍｍ
”の発光ダイオード素子に、表面電極の面積占有率が、
素子表面の面積に対して１０〜１５％になる表面電極を
均一に形成すると、素子を流れる電流の分布が均一にな
るとともに、この素子の活性層部分で発生した光が、表
面電極で遮蔽されることも少なくなる。したがって、こ
のような表面電極構造をとる大面積発光ダイオード素子
は均一発光をするから、その発光輝度はその他の電極構
造をとる大面積発光ダイオード素子よりも高い値になる
。As mentioned above, the area of the element surface is at least 20 mm.
In the light emitting diode element of ``, the area occupation rate of the surface electrode is
By uniformly forming surface electrodes that account for 10 to 15% of the surface area of the device, the distribution of current flowing through the device becomes uniform, and light generated in the active layer of the device is blocked by the surface electrodes. There will be fewer things happening. Therefore, since a large area light emitting diode element having such a surface electrode structure emits light uniformly, its luminance is higher than that of a large area light emitting diode element having other electrode structures.

なお、本発明は第１図に示したような表面電極構造を採
る発光ダイオード素子を搭載するものに限られない０例
えば、第３図に示したような渦巻形状の表面電極構造１
１ｂ、第４図に示したような網目状の表面電極構造１１
ｃ、第５図に示したような放射状の表面電極構造ｌｉｄ
を採る発光ダイオード素子を搭載するのであってもよい
、ただし、何れの電極構造を採るにしても、表面電極は
素子表面に均一に形成され、パターン幅が２０〜２００
μｍで、表面電極の面積占有率は１０〜１５％であるこ
とが必要とされる。Note that the present invention is not limited to mounting a light emitting diode element having a surface electrode structure as shown in FIG. 1. For example, a spiral surface electrode structure 1 as shown in FIG.
1b, a mesh-like surface electrode structure 11 as shown in FIG.
c. Radial surface electrode structure lid as shown in Figure 5.
However, no matter which electrode structure is adopted, the surface electrode must be uniformly formed on the element surface and have a pattern width of 20 to 200 mm.
In μm, the area occupation rate of the surface electrode is required to be 10-15%.

また、前記実施例では、四角形状の発光ダイオード素子
を例に採って説明したが、本発明はこれに限られるもの
ではく、素子形状は任意に決定される。第６図は、本発
明のその他の実施例を示している。Further, in the above embodiments, a rectangular light emitting diode element was used as an example, but the present invention is not limited to this, and the element shape can be arbitrarily determined. FIG. 6 shows another embodiment of the invention.

第６図において、発光ダイオード素子３１は、例えば、
反応性イオンエツチング法によって、一枚のウェハから
「大」の字形状に切り抜かれた素子を示している。この
素子の表面には、上述したようにパターン幅が２０〜２
００Ｉ！ｍで、表面電極の面積占有率が１０〜１５％に
なる表面電極３２が均一に形成さている０発光ダイオー
ド素子３１は、プリント基板３３上のカソード配線領域
３４にグイボンディングされている。また、前記カソー
ド配線領域３４を取り囲むようにアノード配ｖＡ３５が
形成されている。このアノード配線３５と、発光ダイオ
ード素子の表面電極３２との間は、複数の金線でワイヤ
ポンディングされている。そして、カソード配線領域３
４はリード端子３６ａに、アノード配線３５はリード端
子３６ｂに、それぞれ接続されている。In FIG. 6, the light emitting diode element 31 is, for example,
It shows an element cut out in the shape of a large letter from a single wafer using the reactive ion etching method. As mentioned above, the surface of this element has a pattern width of 20 to 2
00I! A light emitting diode element 31 having a uniformly formed surface electrode 32 having an area occupation rate of 10 to 15% is bonded to a cathode wiring area 34 on a printed circuit board 33. Further, an anode wiring region 35 is formed to surround the cathode wiring region 34. A plurality of gold wires are wire bonded between the anode wiring 35 and the surface electrode 32 of the light emitting diode element. And cathode wiring area 3
4 is connected to the lead terminal 36a, and the anode wiring 35 is connected to the lead terminal 36b.

このように発光ダイオード素子３１が組み込まれた基板
３３に、「大Ｊの字の開口を有した枠体３７が嵌め付け
られ、その開口内に透過性のエポキシ樹脂が充填される
。このように形成すれば、−個の素子で大型の「大」の
字表示を行うことができる。A frame 37 having a large J-shaped opening is fitted onto the substrate 33 in which the light emitting diode element 31 is incorporated in this manner, and the opening is filled with transparent epoxy resin. If formed, a large ``large'' character display can be performed using - number of elements.

なお、第６図に示した実施例では、−個の素子で「大ｊ
の字を形成するようにしたが、第１図、第２図〜第５図
においてガ、したような四角形状の大型素子を、第７図
に示すようにｒ大」の字状に配列して形成してもよい。In addition, in the embodiment shown in FIG.
However, large rectangular elements as shown in Figs. It may be formed by

（発明の効果） 上述したように、本発明に係る発光ダイオード表示装置
は、パターン幅および電極占有面積を最適に設定した表
面電極を素子表面に均一に形成した発光ダイオード素子
を搭載している。(Effects of the Invention) As described above, the light emitting diode display device according to the present invention is equipped with a light emitting diode element in which a surface electrode with an optimal pattern width and electrode occupation area is uniformly formed on the element surface.

従って、本発明によれば、均一かつ高輝度な発光を得る
ことができる発光ダイオード表示装置を実現することが
できる。Therefore, according to the present invention, it is possible to realize a light emitting diode display device that can obtain uniform and high-intensity light emission.

また、本発明によれば、大型の発光ダイオード表示装置
を製造するにあたって、グイボンディングすべき素子の
数を少なくできるので、装置の製造効率を向上させるこ
とができる。Further, according to the present invention, when manufacturing a large-sized light emitting diode display device, the number of elements to be bonded can be reduced, so that the manufacturing efficiency of the device can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本実施例に係る発光ダイオード表示装置に搭載
される発光ダイオード素子の電極構造の説明図、第２図
は第１図に示した発光ダイオード素子を搭載た発光ダイ
オード表示装置の一実施例の一部破断斜視図、第３図〜
第５図は発光ダイオード素子のその他の実施例の説明図
、第６図および第７図は本発明のその他の実施例の説明
図、第８図は従来の発光ダイオード表示装置における基
板への発光ダイオード素子の取り付は状態を示す部分斜
視図、第９図は従来の発光ダイオード表示装置に搭載さ
れる発光ダイオード素子の外観斜視図、第１０図は従来
の発光ダイオード表示装置の構造を略示した断面図、第
１１図は従来の発光ダイオード表示装置の等価回路図で
ある。 １０・・・発光ダイオード素子、ｌｌａ〜ｌｉｄ・・・
表面電極。FIG. 1 is an explanatory diagram of the electrode structure of a light emitting diode element mounted on a light emitting diode display device according to this embodiment, and FIG. 2 is an implementation of a light emitting diode display device equipped with the light emitting diode element shown in FIG. 1. Partially cutaway perspective view of the example, Figure 3~
FIG. 5 is an explanatory diagram of another embodiment of the light emitting diode element, FIGS. 6 and 7 are explanatory diagrams of other embodiments of the present invention, and FIG. 8 is an explanatory diagram of another embodiment of the light emitting diode device. FIG. 9 is a partial perspective view showing the mounting state of a diode element, FIG. 9 is an external perspective view of a light emitting diode element mounted on a conventional light emitting diode display device, and FIG. 10 is a schematic diagram showing the structure of a conventional light emitting diode display device. FIG. 11 is an equivalent circuit diagram of a conventional light emitting diode display device. 10...Light emitting diode element, lla~lid...
surface electrode.

Claims (1)

【特許請求の範囲】[Claims] （１）素子表面の面積が少なくとも２０ｍｍ＾２であり
、かつ、２０〜２００μｍのパターン幅を有する表面電
極が前記素子表面に均一に形成されているとともに、前
記表面電極の面積占有率が、素子表面の面積に対して１
０〜１５％になる大面積発光ダイオード素子を搭載して
なることを特徴とする発光ダイオード表示装置。(1) The surface area of the element surface is at least 20 mm^2, and a surface electrode having a pattern width of 20 to 200 μm is uniformly formed on the element surface, and the area occupation rate of the surface electrode is 1 for the area of the surface
1. A light emitting diode display device characterized by being equipped with a large area light emitting diode element of 0 to 15%.
JP60282449A 1985-12-16 1985-12-16 Light-emitting diode display device Pending JPS62141788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60282449A JPS62141788A (en) 1985-12-16 1985-12-16 Light-emitting diode display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60282449A JPS62141788A (en) 1985-12-16 1985-12-16 Light-emitting diode display device

Publications (1)

Publication Number Publication Date
JPS62141788A true JPS62141788A (en) 1987-06-25

Family

ID=17652567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60282449A Pending JPS62141788A (en) 1985-12-16 1985-12-16 Light-emitting diode display device

Country Status (1)

Country Link
JP (1) JPS62141788A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555565U (en) * 1991-12-26 1993-07-23 関西日本電気株式会社 Light emitting diode
US5966170A (en) * 1992-01-27 1999-10-12 Mitsubishi Denki Kabushiki Color video camera for generating a Luminance signal with unattenuated harmonics
KR100365307B1 (en) * 2000-08-28 2002-12-18 박영구 Indoor/outdoor advertising device and method of manufacturing the same
JP2004363572A (en) * 2003-05-12 2004-12-24 Showa Denko Kk Semiconductor light emitting device and light emitting diode
KR100786361B1 (en) * 2007-04-13 2007-12-14 (주)회동미디어 Manufacturing method of light diffusion epoxy LED surface emitting channel
JP2011187981A (en) * 2003-04-15 2011-09-22 Luminus Devices Inc Light-emitting element
JP2013535759A (en) * 2010-07-05 2013-09-12 ケンブリッジ ディスプレイ テクノロジー リミテッド Lighting element
US9324914B2 (en) 2009-08-31 2016-04-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and process for production thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555565U (en) * 1991-12-26 1993-07-23 関西日本電気株式会社 Light emitting diode
US5966170A (en) * 1992-01-27 1999-10-12 Mitsubishi Denki Kabushiki Color video camera for generating a Luminance signal with unattenuated harmonics
KR100365307B1 (en) * 2000-08-28 2002-12-18 박영구 Indoor/outdoor advertising device and method of manufacturing the same
JP2011187981A (en) * 2003-04-15 2011-09-22 Luminus Devices Inc Light-emitting element
JP2004363572A (en) * 2003-05-12 2004-12-24 Showa Denko Kk Semiconductor light emitting device and light emitting diode
KR100786361B1 (en) * 2007-04-13 2007-12-14 (주)회동미디어 Manufacturing method of light diffusion epoxy LED surface emitting channel
US9324914B2 (en) 2009-08-31 2016-04-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and process for production thereof
JP2013535759A (en) * 2010-07-05 2013-09-12 ケンブリッジ ディスプレイ テクノロジー リミテッド Lighting element

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