JPS62136709A - Manufacture of conductive pattern - Google Patents
Manufacture of conductive patternInfo
- Publication number
- JPS62136709A JPS62136709A JP27505585A JP27505585A JPS62136709A JP S62136709 A JPS62136709 A JP S62136709A JP 27505585 A JP27505585 A JP 27505585A JP 27505585 A JP27505585 A JP 27505585A JP S62136709 A JPS62136709 A JP S62136709A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- oxidizing agent
- membered heterocyclic
- conductive pattern
- heterocyclic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 17
- 239000007800 oxidant agent Substances 0.000 claims description 17
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 150000000565 5-membered heterocyclic compounds Chemical class 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- KEQGZUUPPQEDPF-UHFFFAOYSA-N 1,3-dichloro-5,5-dimethylimidazolidine-2,4-dione Chemical compound CC1(C)N(Cl)C(=O)N(Cl)C1=O KEQGZUUPPQEDPF-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- MMCOUVMKNAHQOY-UHFFFAOYSA-N carbonoperoxoic acid Chemical compound OOC(O)=O MMCOUVMKNAHQOY-UHFFFAOYSA-N 0.000 description 1
- XTHPWXDJESJLNJ-UHFFFAOYSA-N chlorosulfonic acid Substances OS(Cl)(=O)=O XTHPWXDJESJLNJ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000004687 hexahydrates Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- -1 inorganic acid salts Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- MABNMNVCOAICNO-UHFFFAOYSA-N selenophene Chemical compound C=1C=C[se]C=1 MABNMNVCOAICNO-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Electric Cables (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は基材の表面に導電化されたパターンを形成する
方法に関する。さらに詳しくは基材表面にパターン状に
複素５員環式化合物重合体を生成させて、導電性パター
ンを形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of forming a conductive pattern on the surface of a substrate. More specifically, the present invention relates to a method of forming a conductive pattern by forming a five-membered heterocyclic compound polymer in a pattern on the surface of a substrate.
複素５員環式化合物の重合体は比較的安定な導電性高分
子であって、電池材料、センサー材料、オプトエレクト
ロニクス材料、エレクトロニクスデバイスなどの種々の
機能素子などに利用できる有機導電性材料として最近注
目されている。これらの機能素子に利用する場合、これ
らの複素５員環式化合物重合体がデバイスパターン状に
形成されれば、非常に応用範囲が広くなる。このような
方法として電気化学的な方法で、絶縁高分子フィルム中
にポリピロールをパターン状に形成する方法が提案され
ている。（ｆｌｉｋｉｔａ ｅｔ ａｌ、、Ｊａｐａｎ
Ｊ。Polymers of five-membered heterocyclic compounds are relatively stable conductive polymers, and have recently been developed as organic conductive materials that can be used for various functional devices such as battery materials, sensor materials, optoelectronic materials, and electronic devices. Attention has been paid. When used in these functional devices, if these five-membered heterocyclic compound polymers are formed into a device pattern, the range of applications will be extremely wide. As such a method, a method has been proposed in which polypyrrole is formed in a pattern in an insulating polymer film using an electrochemical method. (flikita et al, Japan
J.
Ａｐｐｌ、 Ｐｈｙｓ、 Ｌｅｔｔ、 ２４ Ｌ７９
（１９８５） ］ 、しかしながら、この方法では、特
殊な電極を必要とし、可溶性の高分子膜上にしか形成で
きず、しかも膜厚が数ミクロンのものしか得られない。Appl, Phys, Lett, 24 L79
(1985)], however, this method requires a special electrode, can only be formed on a soluble polymer film, and can only obtain a film thickness of several microns.
本発明の目的は、叙上の観点にたって、簡便に基材の上
に導電性パターンを形成する方法を提供することにある
。In view of the above, an object of the present invention is to provide a method for easily forming a conductive pattern on a base material.
本発明者らは上記問題点を解決するため鋭息検討し、本
発明を完成した。In order to solve the above problems, the present inventors conducted intensive studies and completed the present invention.
すなわち本発明は
表面にパターン状にみぞが加工形成された基材を用い、
そのみぞ中に液状または溶剤に溶解した酸化剤を流延し
た後、複素５員環式化合物と接触させて基材表面にパタ
ーン状に複素５員環式化合物重合体を生成させることを
特徴とする導電性パターンの形成方法である。That is, the present invention uses a base material whose surface has grooves formed in a pattern,
The method is characterized by casting an oxidizing agent in liquid form or dissolved in a solvent into the grooves, and then contacting the oxidizing agent with the five-membered heterocyclic compound to form a polymer of the five-membered heterocyclic compound in a pattern on the surface of the substrate. This is a method for forming a conductive pattern.
本発明の方法において使用される基材の材質としては特
に制限はなく、半導体から絶縁体まで、はとんどの材料
が使用でき、またその形状としては薄膜、厚膜をはじめ
任意の形状の成形体を用いることができる。There are no particular restrictions on the material of the base material used in the method of the present invention, and almost any material can be used, from semiconductors to insulators, and it can be formed into any shape, including thin films and thick films. You can use your body.
本発明の方法においてはこれらの基材の表面にあらかじ
めパターン状にみぞを加工形成しておくことが必要であ
るが、みぞを形成する方法は、通常の加工技術を用いて
行なえば良（、その方法については特に制限はない。In the method of the present invention, it is necessary to process and form grooves in a pattern on the surface of these base materials in advance, but the grooves can be formed using ordinary processing techniques ( There are no particular restrictions on the method.
本発明の方法において酸化剤としては無機酸、金属の化
合物、あるいは無機や有機の酸化物、過酸化物などが用
いられる。具体的には例えば塩酸、硫酸、硝酸、クロル
スルホン酸などの無機酸類、チタン、ジルコニウム、ク
ロム、モリブデン、タングステン、マンガン、鉄、ルテ
ニウム、パラジウム、白金、を同、アルミニウム、スズ
などの金属のハロゲン化物、あるいはそれらの金属の無
機酸塩類が挙げられ、殊にこれらの金属の化合物でもル
イス酸として知られている化合物が好適な酸化剤として
挙げられ、さらにはそれらの金属のアセチルアセトナー
トなどの配位化合物も挙げられる。In the method of the present invention, an inorganic acid, a metal compound, an inorganic or organic oxide, a peroxide, etc. are used as the oxidizing agent. Specifically, for example, inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, and chlorosulfonic acid, titanium, zirconium, chromium, molybdenum, tungsten, manganese, iron, ruthenium, palladium, platinum, and metal halogens such as aluminum and tin. Suitable oxidizing agents include compounds of these metals, or inorganic acid salts of these metals, and in particular compounds of these metals known as Lewis acids, as well as acetylacetonates of these metals. Coordination compounds may also be mentioned.
さらにはまたベルオキソニ硫酸や過炭酸などの過酸の塩
類や、ベンゾキノンや有機過酸化物も挙げられる。これ
らの酸化剤は単独でも、また２種以上の混合としても用
いることができる。Further examples include salts of peracids such as beroxonisulfuric acid and percarbonic acid, benzoquinone and organic peroxides. These oxidizing agents can be used alone or in combination of two or more.
また本発明の方法において酸化剤は液状で使用すること
が必要であって、液体の酸化剤を使用するか、あるいは
酸化剤を溶剤に溶解して使用する。Further, in the method of the present invention, it is necessary to use the oxidizing agent in a liquid state, and the oxidizing agent is used either in liquid form or dissolved in a solvent.
使用する溶剤としては酸化剤を熔解するものであれば特
に制限はなく、例えばアルコール類、ハロゲン化炭化水
素類、芳香族炭化水素類、ニトロ化炭化水素類、エーテ
ル類、ニトリル類、水などが挙げられる。またこの時に
溶剤中に種々のポリマーやオリゴマーをバインダーとし
て加えておくこともできる。The solvent to be used is not particularly limited as long as it dissolves the oxidizing agent, and examples include alcohols, halogenated hydrocarbons, aromatic hydrocarbons, nitrated hydrocarbons, ethers, nitriles, and water. Can be mentioned. Further, at this time, various polymers and oligomers can be added to the solvent as binders.
本発明の方法で使用される複素５員環式化合物とは４（
ＩＭの炭素原子と１ （［ｌｉｌのへテロ原子を有する
不飽和５員環を基本骨格とする化合物であって、たとえ
ばビロール、チオフェン、フラン、セレノフェン、テル
ロフェンおよびそれらの誘導体である。これらの化合物
は単独でも、また２種以上を用いることもできる。The 5-membered heterocyclic compound used in the method of the present invention is 4(
Compounds whose basic skeleton is an unsaturated 5-membered ring having a carbon atom of IM and a heteroatom of 1 can be used alone or in combination of two or more.
本発明における重合方法はまずパターン状に形成された
みぞに液状または溶剤に溶解した酸化剤を流延する。流
延方法には特別な制限はなく、一般の方法が用いられる
。例えば基材の表面に液状の酸化剤を全面に流延したの
ち、余分の酸化剤をぬぐいさるなどの方法が用いられる
。In the polymerization method of the present invention, first, an oxidizing agent in liquid form or dissolved in a solvent is cast into grooves formed in a pattern. There are no special restrictions on the casting method, and a general method can be used. For example, a method is used in which a liquid oxidizing agent is spread over the entire surface of the base material, and then the excess oxidizing agent is wiped off.
ついで複素５員環式化合物と接触させる。この接触方法
としては基材及び酸化剤を溶解しない溶媒中に複素５員
環式化合物を溶解し、その中に上記基材を浸す方法や、
あるいは複素５員環式化合物の蒸気中に上記基材をさら
す方法などが用いられ、特に基材と複素５員環式化合物
の英気を接触させる方法が好適である。It is then brought into contact with a 5-membered heterocyclic compound. This contact method includes a method in which the five-membered heterocyclic compound is dissolved in a solvent that does not dissolve the base material and the oxidizing agent, and the base material is immersed therein;
Alternatively, a method of exposing the base material to the vapor of the five-membered heterocyclic compound may be used, and a method of bringing the base material into contact with the vapor of the five-membered heterocyclic compound is particularly preferred.
かくして基材表面にパターン状に複素５員環式化合物を
生成させることができ、導電性パターンを形成すること
ができる。In this way, a five-membered heterocyclic compound can be formed in a pattern on the surface of the base material, and a conductive pattern can be formed.
以下実施例により本発明をさらに詳細に説明する。 The present invention will be explained in more detail with reference to Examples below.
実施例−１
ポリメチルメタクリル酸の板（２ｃｍＸ５ｃｍ、厚さ２
１■）の表面に巾５０ミクロン、長さ３墓膳、深さ３０
ミクロンのみぞを１００ミクロン間隔で刻み、かつ連結
した第１図に示したパターンを形成した。Example-1 Polymethyl methacrylic acid plate (2 cm x 5 cm, thickness 2
1■) Width 50 microns, length 3 graves, depth 30 on the surface
The pattern shown in FIG. 1 was formed by cutting micron grooves at intervals of 100 microns and connecting them.
なお図中Ａ、Ｂは蒸着した金を示し、Ｃは導電性パター
ンを形成後取り除いた部分を示す。塩化鉄（ＩＩＩ）
・６水和物１ｇをメタノール５０ｍｆｆに溶解した溶
液を酸化剤として用い、上記板上に流延したのち余分の
酸化剤をふき取った。この板をデシケータ中に入れ、ピ
ロールで飽和した窒素ガスを流通させたところ第１図に
示したパターンに従ってポリピロールがパターン状に重
合しており、Ａ。In the figure, A and B indicate the deposited gold, and C indicates the portion removed after the conductive pattern was formed. iron(III) chloride
- A solution of 1 g of hexahydrate dissolved in 50 mff of methanol was used as an oxidizing agent, and after casting on the plate, excess oxidizing agent was wiped off. When this plate was placed in a desiccator and nitrogen gas saturated with pyrrole was passed through it, polypyrrole was polymerized in a pattern according to the pattern shown in FIG.
Ｂ間の抵抗値は］９にΩであり、図の０部を取り除いた
時の抵抗値は２０ＭΩ以上であった。The resistance value between B was ]9Ω, and when the 0 part in the figure was removed, the resistance value was 20MΩ or more.
実施例−２
ガラス板（２ｃｍ Ｘ ５ ＣＪＩ＋、厚さ０．５ｍｍ
）表面に中５０ミクロン、深さ２０ミクロンのみぞで第
１図に示したパターンをエツチングした。酸化剤溶液と
して無水塩化鉄（ＩＩ［）を飽和したニトロメタン溶液
を使用して上記ガラス板上に流延したのち、余分の酸化
剤をふき取った。このガラス板をデシケータ中に入れ、
チオフェンで飽和した窒素ガスを流通させたところポリ
チオフェンがパターン状に重合しており、Ａ、 Ｉ３間
の抵抗値は４にΩであり、０部を取り除いたあとの抵抗
値は２０ＭΩ以上であった。Example-2 Glass plate (2cm x 5 CJI+, thickness 0.5mm
) The pattern shown in Figure 1 was etched into the surface with grooves of 50 microns in diameter and 20 microns in depth. A nitromethane solution saturated with anhydrous iron chloride (II[) was used as the oxidizing agent solution and was cast onto the glass plate, and then the excess oxidizing agent was wiped off. Place this glass plate in a desiccator,
When nitrogen gas saturated with thiophene was passed through, polythiophene was polymerized in a pattern, and the resistance between A and I3 was 4Ω, and after removing part 0, the resistance was more than 20MΩ. .
実施例−３，４
実施例−２において、チオフェンの代りにフラン及びセ
レノフェンを用いた以外は実施例−２と同様に行なった
ところそれぞれポリフラン、ポリセレノフェンがパター
ン状に重合した。Ａ、Ｂ間の抵抗値はそれぞれ１５ＭΩ
、 ８５０ ＫΩであり、Ｃを取り除いたあとの抵抗は
どちらも２０ＭΩ以上であった。Examples 3 and 4 Example 2 was carried out in the same manner as in Example 2, except that furan and selenophene were used instead of thiophene. Polyfuran and polyselenophene were polymerized in a pattern, respectively. The resistance value between A and B is 15MΩ each.
, 850 KΩ, and the resistances after removing C were both 20 MΩ or more.
本発明の方法によれば種々の材質の基材の表面に容易に
かつ工業的に有利に導電性パターンを形成することがで
きる。According to the method of the present invention, conductive patterns can be easily and industrially advantageously formed on the surfaces of substrates made of various materials.
第１図は本発明の導電性パターンの一例を示す。 FIG. 1 shows an example of the conductive pattern of the present invention.
Claims (1)
、そのみぞ中に液状または溶剤に溶解した酸化剤を流延
した後、複素５員環式化合物と接触させて基材表面にパ
ターン状に複素５員環式化合物重合体を生成させること
を特徴とする導電性パターンの形成方法。Using a base material with patterned grooves formed on its surface, a liquid or solvent-dissolved oxidizing agent is cast into the grooves, and then brought into contact with a five-membered heterocyclic compound to create a patterned pattern on the surface of the substrate. 1. A method for forming a conductive pattern, which comprises producing a five-membered heterocyclic compound polymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27505585A JPS62136709A (en) | 1985-12-09 | 1985-12-09 | Manufacture of conductive pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27505585A JPS62136709A (en) | 1985-12-09 | 1985-12-09 | Manufacture of conductive pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62136709A true JPS62136709A (en) | 1987-06-19 |
| JPH0351248B2 JPH0351248B2 (en) | 1991-08-06 |
Family
ID=17550213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27505585A Granted JPS62136709A (en) | 1985-12-09 | 1985-12-09 | Manufacture of conductive pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62136709A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2657423B2 (en) * | 1988-03-03 | 1997-09-24 | ブラスベルク・オーベルフレヒェンテヒニーク・ゲー・エム・ベー・ハー | Novel through-hole plated printed circuit board and manufacturing method thereof |
| JP2002340306A (en) * | 2001-05-17 | 2002-11-27 | Babcock Hitachi Kk | Burner for burning solid fuel and combustion device equipped therewith |
-
1985
- 1985-12-09 JP JP27505585A patent/JPS62136709A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2657423B2 (en) * | 1988-03-03 | 1997-09-24 | ブラスベルク・オーベルフレヒェンテヒニーク・ゲー・エム・ベー・ハー | Novel through-hole plated printed circuit board and manufacturing method thereof |
| JP2002340306A (en) * | 2001-05-17 | 2002-11-27 | Babcock Hitachi Kk | Burner for burning solid fuel and combustion device equipped therewith |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351248B2 (en) | 1991-08-06 |
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