JPS62134926A - Heating apparatus - Google Patents

Abstract

PURPOSE:To realize quick heating and cooling of semiconductor wafers, by arranging heating elements covering a body to be heated in a furnace body formed cylindrically, and dividing the body in the radius direction to constitute the structure capable of opening and closing. CONSTITUTION:In the case of heating process, the pre-heating of furnace bodies 2A and 2B is performed by driving heating elements 8. After that, a driving axis 30 is rotated in the direction shown by an arrow (a), and a slider 26 is shifted in the direction of an arrow (e) to open the furnace bodies 2A and 2B. The rotation of the driving axis 30 is stopped at the position giving a specified opening angle, and a reaction tube 38 containing a semiconductor wafer 36 is transferred in the direction of an arrow (f), and the wafer is arranged in an accommodation part 4 in the furnace bodies 2A and 2B. Then the driving axis 30 is rotated in the direction of an arrow (b), and the slider 26 is shifted in the direction of an arrow (g) to close the furnace bodies 2A and 2B. The closed furnace bodies 2A and 2B are rapidly heated, and a prescribed diffusion process is performed maintaining a desired heating temperature. After that, the driving axis 30 is again rotated in the direction of the arrow (g), and the slider 26 is shifted in the direction of the arrow (e) to open the furnace bodies 2A and 2B. The reaction tube 38 is carried out in the direction of an arrow (h), and the semiconductor wafer 36 is cooled.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a heating device used when heat treating an object to be heated, such as a semiconductor wafer, housed in a reaction tube.
In particular, it relates to rapid heating and cooling of objects to be heated, such as semiconductor wafers.

[Conventional technology]

Conventionally, heating devices used in semiconductor processing have a configuration that covers the circumferential surface of a cylindrical reaction tube that houses a semiconductor wafer, and a heating element is arranged to uniformly heat the circumferential surface of the reaction tube. It was established.

The heat treatment of the semiconductor wafer is performed by inserting the reaction tube containing the semiconductor wafer through the end opening of the heating device, and the semiconductor wafer that has undergone the heat treatment is pulled out together with the reaction tube through the end opening of the heating device. We are planning to do so.

[Problem that the invention seeks to solve]

By the way, moving the reaction tube in and out of the heating device in the longitudinal direction requires a space larger than the length of the reaction tube on the end face side of the heating device, and also takes a long time to move the reaction tube in and out. In particular, when the reaction tube is pulled out from the heating device for cooling, residual heat from the heating device acts on the semiconductor wafer inside the reaction tube, putting a limit on the cooling rate.

Regarding cooling of semiconductor wafers, the effect of rapid cooling may directly affect the characteristics of some semiconductor devices, and the demand for rapid cooling is increasing.

Therefore, an object of the present invention is to provide a heating device that realizes rapid heating and cooling of a semiconductor wafer.

Means for Solving Problem c] As shown in FIG.
), and a heating element 8 is disposed to cover the furnace bodies 2A, 2B.
It is divided in the diameter direction and configured to be openable and closable.

[For production]

The heating device of the present invention opens the furnace body, accommodates the object to be heated in the furnace body, closes the furnace body to complete the heating pupil heating process, and then opens the furnace body and takes out the object to be heated and cools it. Rapid heating and cooling of objects to be heated becomes possible.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows an embodiment of the heating device of the present invention.

In this heating device, a cylindrical furnace is vertically divided into two furnace bodies 2A and 2B, and each furnace body 2A and 2B is configured to be openable and closable. A housing section 4 that houses a cylindrical reaction tube containing a semiconductor wafer.
is formed.

A heating element 8 is installed inside each furnace body 2A, 2B with a heat insulating material 6 interposed therebetween, and a support plate 10 is fixed to the end surface side of each furnace body 2A, 2B.

Each furnace body 2A, 2B is rotatably supported by a column 16 of a support stand 14 with a support shaft 12 passing through the corner of each support plate 10 on the joining side.

Then, on each support plate 10, a support shaft 20 of an opening/closing mechanism 18 for opening and closing the furnace bodies 2A, 2B is installed at the upper or lower corner of the support shaft 12, and a link arm 22 is attached. The other end is connected to the support 1 as shown in FIG.
The slider 26 is rotatably attached via a support shaft 28 to a slider 26 which is installed so as to be movable in the horizontal direction on a rail 24 disposed horizontally at 6. Therefore, the furnace bodies 2A, 2
B can be opened and closed by moving the slider 26 in the horizontal direction and rotating it around the support shaft 12.

Therefore, in order to move the slider 26 in the horizontal direction, a drive shaft 3o that is rotated by a rotational drive means such as a motor is attached between the left and right columns 16, and an arm 32 that transmits rotational force is attached to the circumferential surface of the drive shaft 3o. Install this arm 32
is inserted between engagement shafts 34a and 34b that are attached to the wall surface of slider 260:J at a constant interval. Therefore, when the drive shaft 30 is rotated in the directions of arrows a and b, the arm 32 is rotated according to the direction of arrow C1d.
The slider 26 is moved horizontally in order to rotate in the direction of the furnace body 2A.

2B can be opened and closed.

When performing heat treatment using such a heating device, after preheating the furnace bodies 2A and 2B by driving the heating element 8,
When the drive shaft 3o shown in FIG. 2 is rotated in the direction of the arrow a, the slider 26 is rotated by the arrow e as shown in FIG.
The furnace bodies 2A and 2B can be opened by moving the furnace bodies 2A and 2B in the direction of .

When the predetermined opening degree is obtained, the rotation of the drive shaft 3o is stopped, and the reaction tube 38 containing the semiconductor wafer 36 is moved in the direction of the arrow `` and installed in the housing section 4 of the furnace bodies 2A and 2B. After that, the drive shaft 3o is rotated in the direction of arrow A and the slider 26 is moved in the direction of arrow g to close the furnace bodies 2A and 2B as shown in FIG. 3(B). body 2A,
2B heats rapidly, maintains the heating temperature at a desired value, and performs a predetermined diffusion process, then rotates the drive shaft 3o again in the direction of arrow a, and moves the slider 26 in the direction of arrow e. As shown in FIG. 3(A), the furnace bodies 2A, 2
B is opened, the reaction tube 38 is carried out in the direction of the arrow, and the semiconductor wafer 36 is cooled.

Therefore, the heating treatment of the semiconductor wafer 36 and the cooling treatment thereof can be performed instantly by opening and closing the furnace bodies 2A, 2B. In particular, the time required for attaching and detaching the reaction tube 38 is shortened, its operation is easy, and Rapid heating and cooling of the wafer 36 can be performed.

Furthermore, when the furnace bodies 2A and 2B are opened, the side where the heat insulating material 6 is installed is the back side, so even if the control unit is installed on the back side, the thermal influence of the open furnace bodies 2A and 2B will be This does not occur at all, and since the direction in which the reaction tubes 38 are pulled out is on the peripheral surface side of the furnace bodies 2A, 2B, the area for taking the reaction tubes 38 in and out of the furnace bodies 2A, 2B can be reduced.

〔Effect of the invention〕

As explained above, according to the present invention, an object to be heated such as a semiconductor wafer can be rapidly heated and cooled, and by such heating and cooling processing, for example, a semiconductor element having desired characteristics can be produced. In addition, since the space for attaching and detaching the heated object can be reduced, the installation and processing area can be reduced.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing an embodiment of the heating device of the present invention, FIG. 2 is a perspective view showing the opening/closing mechanism of the heating device shown in FIG. 1, and FIG. 3 is a diagram showing opening and closing of the furnace body. . 2 people, 2B... Furnace body, 8... Heating element, 36... Semiconductor wafer as a heated object. Figure 2 (A) Figure 3 (B)

Claims (1)

[Claims] A heating device characterized in that a heating element that covers an object to be heated is disposed inside a cylindrical furnace body, and the furnace body is divided in the diametrical direction so as to be openable and closable.