JPS62126535A - Control system for ion implanter - Google Patents

Abstract

PURPOSE:To limit the number of group-controlling transmitting parts to only one, by constituting a control system to connect a group-control computer to plural ion implanter controller with a single looplike transmitting passage, give control conditions to them and receive monitoring data. CONSTITUTION:A control system is constituted of ion implanter controllers 51-53 inclusive of system controlling controllers 61-63 performing control on the basis of given control conditions and taking in monitoring data and outputting them, and transmitting parts 65-67, and a group-control computer 54. An interval between the computer 54 and each of these controllers 51-53 is connected with a transmitting passage 104 of an optical fiber or the like in a single loop form. And, monitoring data and other reports are received by the computer 54, displaying them on a cathode-ray tube 101, while they are transmitted to a host computer. Therefore, a group of ion implanters are made monitorable at one spot alone and, what is more, transmitting time is reducible.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to an ion implanter control system used to control a plurality of ion implanters.

BACKGROUND OF THE INVENTION FIG. 3 is a block diagram showing the configuration of a conventional large current ion implanter and an ion implanter control device that controls the large current ion implanter. A large current type ion implantation device has an ion current of approximately several mA to 10mA.

A large current type ion implanter can be roughly divided into an ion source 1 that generates ions, and a mass spectrometer 3 that selects the necessary ion species from the ion beam 2 extracted from the ion source 1.
, an acceleration tube 4 that accelerates the ion beam 2 emitted from the mass spectrometer 3, and an end station 6 that implants ions by applying the ion beam 2 emitted from the acceleration tube 4 to a wafer 5. There is a vacuum inside. The ion source 1 includes a gas box 7 for supplying gas, various voltages, and
An ion source power supply 8 for supplying the F4 flow and an extraction power tAC+ for extracting the ion beam 2 are attached, and the mass spectrometer 3 is equipped with an analysis magnet power supply 10 for supplying power to a mass analysis magnet (not shown). An accelerating power source 11 is attached to the accelerating tube 4.

The ion source l is, for example, a hot cathode PIG attached to a solid state oven.
The mold includes a filament (not shown) and an arc bridge (
(not shown) and a source magnet (not shown),
Ion source power supply (filament power supply, arc power supply, source magnet N source.

(oven power supply, etc.) 8 to filament (not shown).

The gas box 7 is powered by an arc electrode (not shown), a source magnet (not shown), etc.
ionizes the gas supplied to the arc chamber from

Specifically, plasma is created by performing arc discharge using thermionic emission from the filament as a trigger. Then, 30KV to 40KV is supplied from the drawer power source 9.
This ion source 1 extracts an ion beam 2 from a slit-shaped ion extractor Ola using a voltage of 1. The ion source 1 uses not only gas but also solid (As) as the ion source material.

p, sb, etc.), and when using a solid, the solid ion source material is evaporated in a solid oven and introduced into the arc chamber (at the same time, a carrier gas (Ar, etc.) is introduced from the gas box 7. into an arc chamber to ionize the solid ionic material.

The gas box 7 is connected to the above-mentioned ion source 1, and is, for example, a 41 Im gas bottle (for example, Ar.

S i F 4 , B CI 3 , P CI, etc.), and any f!
ion gases are selectively supplied to the ions R1.

The mass spectrometer 3 is powered by an analysis magnet power supply 10 to a mass analysis magnet deflected at 90 degrees, selects the necessary ion species from the ion beam 2 extracted from the ion source 1, and performs magnetic focusing of the mass analysis magnet. The reason why this mass spectrometer 3, which utilizes the action to focus the ion beam 2 into the analysis slit 3a and guide it to the acceleration tube 4, is necessary is as follows. The ions extracted from the ion source often contain unnecessary ions.For example, when extracting boron ions, BF3 gas is used, but in this case, in addition to the necessary boron ions, F'',
This is because unnecessary ions such as BF" and BF2+ are generated, and if these unnecessary ions are implanted into the wafer 5, it will cause problems.

In the mass spectrometer 3, by adjusting the current supplied to the mass analysis magnet 7), the necessary boron ions are deflected by exactly 90 degrees in the vacuum chamber, guided to the analysis magnet 3a, and then sent to the acceleration tube 4. I will be entering. On the other hand, since unnecessary ions have a different mass from boron ions, they hit the side wall of the vacuum chamber of the mass spectrometer 3 and are absorbed there, and do not reach the analysis slit 3a.

The acceleration tube 4 has a structure in which, for example, insulators and metal electrodes are bonded in multiple stages, and each electric bridge has an acceleration tube. ! A constant acceleration voltage is applied from the fill through a resistor (not shown), and the ion beam 2 enters the end station 6 after being accelerated by a voltage that is the sum of the above-mentioned extraction voltage and this acceleration voltage. This acceleration voltage is set according to the implantation energy.

The end station 6 is of a mechanical scan type that moves the disk 12 while keeping the ion beam 2 stationary. The wafer 5 is loaded on the circumference of the disk 12,
In order to uniformly irradiate the entire surface of the wafer 5 with the ion beam 2, the disk 12 is rotated and translated in the beam area by an induction motor 13 and a stamping motor 14. In this case, the rotational speed of the disk 12 is constant, but the translational movement is caused by the fact that the movement speed of the disk 12 differs between the outer and inner peripheries of the disk 12, and regardless of variations in the beam current, the implantation amount is 5. Since it is necessary to make the translation speed uniform over the entire surface, it is necessary to control the translation speed in accordance with the above-mentioned changes, rather than keeping it constant.

Furthermore, the end station 6 loads the wafer 5 onto the disk 12 before ion implantation, and takes out the wafer 5 from the disk 12 after the implantation. This is done via an aero vine (not shown), and the end station 6
And the vacuum state in the previous stage is maintained.

In addition, in FIG. 3, for convenience of explanation, the disk 12 is shown as 2ti.
ll, but in reality there is only one in the end station 6.

Next, an ion implanter control device that controls the above-described large current type ion implanter will be described. End stage controller 15 in this ion implanter control device. Utility controller 16, man-machine controller 17. Interface unit 18. The injection controller 191t+speed controller 220 and mass controller 21 each include a CPU (central processing unit!2).

The man-machine controller 17 includes a CPU (central processing bag W).
t), a keyboard, a CRT, a floppy disk, etc., which allow data (
(acceleration energy, beam amount, dose amount, ion species, wafer size, etc.), and each controller 15.
16, 19, 20. The monitoring data from 21 is read through the interface unit 18 and the status is displayed.

The utility controller 16 controls the vacuum system and monitors the status of the device, and includes a vacuum gauge 22. Pulp 23. Vacuum pumps for extraction systems and beam lines24. Other limit switches and the like are connected, and the vacuum pump 24 and valve 23 are controlled according to commands from the man-machine controller 17.
In addition to performing sequence control, data on the degree of vacuum and the status of various other services are monitored, and each monitored data is sent to the interface unit 18.

The ion source controller 24 is a controller for plasma generation in the ion source 1, and controls parameters (
Filament voltage, arc voltage.

The source magnet current, etc.) is changed based on instructions from the man-machine controller 17, and the ion beam 2 is generated while the operator interacts with the man-machine controller 17.

The gas selection controller 26 selects a gas sample for plasma generation in the ion source 1 based on instructions from the man-machine controller 17.

The mass controller 21 adjusts the analysis magnet current given to the mass analyzer 3 so that the ion beam 2 having the mass value set by the man-machine controller 17 can be obtained.

Specifically, the analysis magnet current given to the mass spectrometer 3 is set according to the mass value, and the extraction voltage controller 2
The mass value calculated from the extraction voltage set in step 5 and the analyzed magnet current is displayed on the extraction voltage controller 25, and the man-machine controller 17
send to At this time, the mass controller 21 controls the analysis magnet current so that the beam current becomes the maximum so that necessary ions always reach the analysis slit 3a.

The acceleration controller 20 is a man-machine controller 17
The acceleration voltage is set according to the acceleration energy given by.

The injection controller 19 is a man-machine controller 17
Ions are implanted uniformly over the entire surface of the wafer 5 by controlling the translational movement of the disk 12 via the stepping motor driver 26 based on control condition data such as the dose amount and wafer size given through the interface unit 18. Then input the digitally converted beam current at the converter 27, integrate the beam current, and stop ion implantation when this integrated value reaches a value determined by the size and dose amount. let

The end stage gin controller 15 controls wafer handling, and includes, for example, a vacuum gauge 28 that measures the degree of vacuum in the airlock. Based on the signal from the optical sensor 28', the vacuum pump 29. Controls the valve 30, etc. Note that the end station controller 15, the utility controller 16, and the injection controller 19 are interlocked with each other.

The telemeter 31 transmits and receives data between the ground side and the high voltage section 32, and the ground side unit and the high voltage section side unit are connected by an optical fiber or the like.

FIG. 4 is a block diagram showing the configuration of a conventional medium current type ion implantation device and an ion implantation device control device that controls the medium current type ion implantation device.

The medium current type ion implantation device has an ion current of about 1 mA, and focuses the ion beam 2 with a Q lens 34 and scans the ion beam 2 with a scanning electrode 35 to inject ions onto the entire surface of a wafer 37 in an implantation chamber 36. Beam 2 is scanned and irradiated. In this case, ion implantation into the wafer 37 is performed while the wafer 37 is fixed, and is performed one by one one by one. End station 3 therefore differs in structure from that of FIG.

The Q lens 34 is provided with a Q lens power source 39, and the scan electrode 35 is provided with a scan 1ti1140.

The other configurations are similar to the large current type ion implanter.

On the other hand, in the control device for the ion implantation device, a focusing/scanning controller 41 and a mode Faraday 42 are added, the implantation controller 19 and the interface unit 18 are eliminated, and a part of the function is incorporated into the man-machine controller 17. Other than that, it is the same as the one for large current.

Mort Faraday 42 is a man-machine controller 17
The injection mode is selected according to instructions from the scanner, and the scan beam mode or spot beam mode is selected. The scan beam mode is a normal implantation mode, and the spot mode is a mode for adjusting the ion beam 2.

In the spot mode, the focusing/scanning controller 41 changes the focusing voltage and the scanning voltage to adjust the size of the beam spot and the beam scanning width.

As described above, the ion implanter control device includes one man-machine controller that has a keyboard and CRT as input/output devices, and multiple controllers that have measuring instruments, controlled devices, etc. installed in the ion implanter as input/output devices. It consists of system control controllers (utility controllers, end station controllers, etc.).

Then, the man-machine controller takes in the control condition data set by the keyboard and sends it to multiple system control controllers.
In the lm controller, multiple system controllers locally distribute and control multiple systems for ion implantation based on control condition data sent from the man-machine controller. sends the monitoring data of each system to the man-machine controller, and the man-machine controller displays this monitoring data on a CRT.

Therefore, the operator can centrally monitor the status of the ion implantation apparatus and set control conditions using the keyboard and CRT of the man-machine controller.

In manufacturing equipment for semiconductors, etc., ion implantation equipment is generally used in one
It is rare that only one ion implanter is operated, and in most cases, multiple ion implanters are operated in parallel.

In such a case, it is necessary to provide an ion implanter control device as described above for each ion implanter.

However, with such a configuration, an operator must go to the installation location and individually set control conditions for each ion implanter control device, making management difficult.

In order to solve these problems, an ion implanter control system including a group management computer has been proposed.

As shown in FIG. 5, this ion implanter control system includes a group of ion implanter controllers 51 to 53 and a group management computer 54 that performs group management of these ion implanter controllers 51 to 53. , an upper layer transmission path 55 that connects the ion implanter control devices 51 to 53 and the group management computer 54, and an uppermost layer transmission path 56 that connects the group management computer 54 and the host computer.

The ion implanter control device 51 controls multiple systems for ion implantation (beam system, end station run system, utility system) locally and distributedly based on given control conditions. A plurality of system control controllers 61 to 63 that each take in and output system monitoring data, and a plurality of system control controllers 61.
63 are set and given to the plurality of system control controllers 61 to 63, and the control conditions input from the upper layer are set to the plurality of system control controllers 61 to 6.
3, a man-machine controller 64 that captures and displays the monitoring data output from the plurality of system control controllers 61 to 63 and outputs it to the upper layer, and a plurality of system control controllers 61 to 63 and the man-machine controller 64 A plurality of system control transmission units 65 to 6 and a plurality of system control transmission units 65 to 68 respectively connected to
a lower layer transmission path 69 that connects the
It consists of 0.

The man-machine controller 64 includes a keyboard 71 and a CRT 72 in addition to the CPU.

The system control controller (beam system) 61 is connected to the ion source power supply 8. in FIG. Gas box 7° drawer power supply 91 analysis magnet 1! Source 10. Acceleration power source 11. Controls the beam system such as the stepping motor 14.

The system control controller (utility system) 62 is connected to the valve 23 in FIG. Controls the vacuum system such as the vacuum pump 24 and other utilities.

System control controller (end station system) 6
3 controls the wafer handling of the end station run in FIG.

Other ion implanter control devices 52.53 have the same configuration as above, 73-75, 85-87 are system control controllers, 76.88 are man-machine controllers, 77-80, 89-92 are system control controllers. control transmission section, 82.
94 is the transmission unit for the injection device, 83.95 is the keyboard, 8
4.96 is a CRT, and 81.93 is a lower layer transmission line.

On the other hand, the group management computer 54 sets control conditions for a plurality of system control controllers 61 to 63, 73 to 75, 85 to 87 of each ion implanter width control device 51 to 53, and controls each ion implanter. A group that receives control conditions sent from the host computer and provides them to the man-machine controllers 64, 76.88 of the respective ion implantation device control devices 51-53. A management controller 97 and a plurality of group management transmission sections 98A and 98B connected to the group management controller 97.

98C, and a transmission section 99 connected to the host computer via the uppermost layer transmission path 56.

In addition to the CPU, the group management controller 97 includes a keyboard 100. It has CRTIOl etc.

Further, the group management transmission units 98A, 98B, and 98G are connected to each ion implanter control device 51 to 5 through the upper layer transmission path 55.
It is connected to the injection device transmission section 70, 82° 94 of No. 3 in a one-to-l ratio.

This control system for ion implanters uses control conditions (ion species) sent from the host combinator.

Energy, dose amount, beam amount, wafer size.

The group management computer 54 receives the number of the ion implanter to be operated, and sends the received control conditions to the respective ion implanter control devices 51 to 53. Then, each ion implanter control device 51 to 53 controls each ion implanter based on the received control conditions.

Each of the ion implanter control devices 51 to 53 sends a report on the loft status, such as a completion report, to the group management computer 54. The 0 group management computer 54 receives and receives the report, and
It is displayed on the OI and sent to the host computer.

This will be explained in more detail below. Group management controller 97
is the top layer transmission line 56. Control conditions sent through the transmission section 99 or set by the operator using the keyboard 100 while looking at the CRT10I are sent to the group management transmission section 98A.
, 98B, 98C, upper layer transmission line 55. The man-machine controller 64 through the transmission section 70, 82, 94 for the injection device.
, 76.88, and the man-machine controller 6
The loft status report sent from 4.76° 88 via the above route is received and sent to the host computer through the transmission section 99 and the top layer transmission line 56, and displayed on the CRTIOI.

For example, when the control conditions sent from the group IFF1 controller 97 are for its own machine, the man-machine controller 64 transmits the sent control conditions to each system through the system control transmission sections 65 to 68 and the lower layer transmission path 69. It is sent to the control controllers 61 to 63. Each system control controller 61 to 63 controls each system according to the sent control conditions, and transmits the monitoring data to system control transmission units 65 to 68.
Then, the loft state is sent to the man-machine controller 64 through the lower layer transmission section 69, and the loft state is also sent to the man-machine controller 64 through the same route. The man-machine controller 64 displays the monitoring data sent from each of the system control controllers 61 to 63 on the CRT 72, and also sends the loft status to the group management controller 97.

The man-machine controller 64 receives not only the control conditions sent from the i-management controller 97 but also the control conditions sent from the i-management controller 97.
Control conditions set using the keyboard 71 while viewing the RT 72 can also be sent to the controllers 61 to 63 for controlling each system.

Other ion implanter controllers operate in a similar manner.

Problems to be Solved by the Invention However, the control system for the ion implanter shown in FIG.
- Because the information was simply sent to the man-machine controllers 64, 76, 88, it is difficult to check the status of each ion implanter in detail during automatic operation using the man-machine controller normally installed in the 'J-7/L/- room. Machine controller 64, 76.8
The operator had to go out to point 8,
It is difficult to check the status (also, there is a lot of operator work inside the clean room, which poses a problem when operating unmanned.

In addition, when manually launching the beam, for example, a man-machine controller 64°76.8 in the screen room is required.
8, and unmanned operation is not possible in this case.

Further, since the group management computer 97 and the ion implanter control devices 51 to 53 are star-connected through the upper layer transmission path 55, the group management transmission section 98A is formed.

Requires a lot of 98B and 98C.

Additionally, since there is an upper layer transmission path 55 and a lower layer transmission path 69°81.93 between the group management controller 97 and the system control controllers 61 to 63.73 to 75.85 to 87, there is a problem that the transmission time is long. There is.

An object of the present invention is to provide a control system for an ion implanter that can monitor and control a group of ion implanters at one location, reduce the number of transmission units for group management, and reduce transmission time. The goal is to provide the following.

Means for Solving the Problems The ion implanter control system of the present invention is an ion implanter control system that controls a group of ion implanters, and includes multiple systems for ion implantation in each ion implanter. A plurality of system control controllers that locally perform control in a distributed manner based on given control conditions and each captures and outputs monitoring data from multiple systems, and a system that is connected to each of these multiple system control controllers. a group of ion implanter control devices each having a plurality of system control transmission units; and a group of ion implanter control devices each having a plurality of system control transmission units; and a control condition for each of the ion implanter control devices set for the plurality of system control controllers, a group management man-machine controller that provides the plurality of system control controllers of the control device and captures and displays monitoring data output from the plurality of system control controllers of each of the ion implantation device control devices; a group management computer having a group management transmission section connected to a management man-machine controller; the plurality of system control transmission sections of each of the ion implanter control devices and the group management transmission section of the group management computer; and a transmission line connecting the parts in a single loop.

According to the configuration of the present invention, since the group management man-machine controller of the group management computer and the plurality of system control controllers of each ion implanter control device are connected through a single loop-shaped transmission path, the group management The human-machine controller can provide control conditions to all system controllers, and can also receive and display monitoring data sent from all system controllers, allowing you to control a group of ions in one place. The injection device can be monitored and controlled. Furthermore, since the group management man-machine controller and the system control controller are connected through a loop-shaped transmission path, the number of group management transmission units may be IIB, which can be smaller than in the proposed example. Furthermore, since the group management man-machine controller and the system control controller are connected through a single transmission path, transmission time can be shortened.

Example A first embodiment of this invention will be described based on FIG.

As shown in FIG. 1, this ion implanter control system is an ion implanter control system that controls a group of ion implanters, and controls multiple systems for ion implantation in each ion implanter. A plurality of system control controllers 61 to 63; and 73 to 75° 85 which perform locally distributed control based on given control conditions and each captures and outputs monitoring data from a plurality of systems;
~87 and the controller for controlling these multiple systems -561~
A plurality of system control transmission units 65-67° 77-79.89- connected to 63.73-75.85-87, respectively
a group of ion implanter control devices 51 to 53 each having a ion implanter control device 91;
~53 said plurality of system control controllers 61 to 63
The controller for controlling the plurality of systems of each of the ion implanter control devices 51 to 53 sets control conditions for 61 to 63 degrees 73 to 75 degrees.
A group for capturing and displaying monitoring data outputted from the plurality of system control controllers 61 to 63, 73 to 75, and 85 to 87 of each of the ion implanter control devices 51 to 53; A group management computer 54 having a management man-machine controller 102 and a group management transmission section 103 connected to the group management man-machine controller 102; System control transmission section 65-67.77-79.89-9
1 and the group management transmission unit 103 of the group management computer 54 in a single loop.

In this case, each of the ion implanter control devices 51 to 53 includes man-machine controllers 64, 76.
88 and system control transmission sections 68, 80 .
92, and system control transmission sections 68, 80, and 92 are interposed in the transmission path 104.

For example, the Everman machine controller 64 has a keyboard 71 . It has a CRT 72, etc., sets control conditions for the plurality of system control controllers 61 to 63, provides them to the plurality of system control controllers 61 to 63, and monitors output from the plurality of system control controllers 61 to 63. It is designed to capture and display data.

The system control controller (beam system) 61 controls the ion leakage #8 in FIG. Gas box 7゜drawer power supply 91 analysis magnet power supply 10. Acceleration electric ax 1. Controls the beam system such as the stepping motor 14.

The system control controller (utility system) 62 is connected to the valve 23 in FIG. It controls the vacuum system such as the X main pump 24 and other utilities.

System control controller (end station system) 6
3 controls the wafer handling of the end station run in FIG.

The other ion implanter control devices 52.53 have the same configuration as above, 83.95 is a keyboard, 84.9 is a keyboard, and 84.9 is a keyboard.
6 is a CRT.

The group management computer 54 also has the above-mentioned configuration +71
(&, Man-machine controller for group management'p 102
The transmission unit 99 is connected to the host computer via the transmission line 56.

Group management man-machine controller 102 Lt, CPU
In addition to the keyboard 100. Each ion implanter control device 51-53c5 man-machine controller 64.76.88 and a plurality of system control controllers 61-63.73-75.85- You can now send it to 87.

This control system for the ion implanter uses control conditions (ion species) sent from the host controller.

Energy, dose amount, beam amount, wafer size.

number of the ion implanter to be activated) or keyboard 1
The group management man-machine controller 102 receives similar control conditions given from 00, and the group management man-machine controller 102 sends the received control conditions to the respective ion implanter control devices 51 to 53. Become. Then, each ion implanter control device 51 to 53 controls each ion implanter based on the received control conditions.

Each of the ion implanter control devices 51 to 53 sends loft status reports such as monitoring data and completion reports to the group management computer 54. The 0 group management computer 54 receives the reports, displays them on the CRTIOI, and displays them on the host computer. Send only a report on Heorot's condition.

The 0 group management man-machine controller 102, which will be explained in more detail below, is the transmission line 56. Control conditions sent through the transmission section 99 or set by the operator using the keyboard 100 while looking at the CRTIOI are sent to the group management transmission section 103. Transmission path 104, system control transmission sections 65 to 68.
11-80° 89-92 through the man-machine controller 64° 76.88 and the system control controller 61
~63.73~75.85~87, and also sent from the man-machine controllers 64, 76.88 and system control controllers 61~63.73~75°85~87 through the above routes. Receives data and loft status reports and displays them on CRTI 01, and transmits only lot status reports to transmission unit 99 and transmission line 5.
6 to the host computer.

Controller for each system control 61-63.73-75.8
5 to 87 control each system according to the sent control conditions, and transmit monitoring data and loft status to system control transmission units 65 to 68, 77 to 80, 79 to 92. Transmission line 104
It is sent to the man-machine controller 64, 76, 88 and the man-machine controller 102 for group management through the first group management transmission section 103. Man-machine controller 64, 76
．． 88 is a controller for controlling each system 61 to 63.73
~75.Monitoring data sent from 85~87 to CRT7
Displayed at 2,84.96. Also, the keyboard of the man-machine controller 64.76.88? When control conditions are set in 1.83.95, monitoring data and lot status are sent in the same way as above.

Other ion implanter control devices operate in the same manner.

In this way, in this embodiment, the group management man-machine controller 102 of the group management computer 54 and the plurality of system control controllers 61-63, 73-75, 85-87 of the respective ion implanter control devices 51-53 Since these are connected by a single loop-shaped transmission line 104, control conditions can be given to all system control controllers 61-63, 73-75, 85-87. , can receive and display monitoring data sent from all system control controllers 61-63, 73-75, 85-87,
A group of ion implanters can be monitored and controlled at +lI location, making it easy to realize unmanned cream room.

In addition, the group management man-machine controller 102 and the system control controller 61-63, 73-75°85-87
Since these are connected by a loop-shaped transmission path 104, the number of group management transmission sections 103 can be reduced to one, which is smaller than in the proposed example. Further, since the group management man-machine controller 102 and the system control controllers 61-63, 73-75, 85-87 are connected through a single transmission path 104, transmission time can be shortened.

A second embodiment of the invention will be described based on FIG.

In this ion implanter control system, the transmission unit 99 in FIG.
In this configuration, signals are sent and received to and from 53 using a separate transmission system. That is, each ion implanter control device 5
Transmission units 106 to 108 are connected to the man-machine controllers 64, 76.88 of 1 to 53, and transmission units 109 to 111 are also provided to the host computer 105.
06 to 111 are connected by a one-to-one transmission path 112, and each man-machine controller 64°76.88 receives control conditions from the host computer 105 and connects the system control controllers 61 to 63°73 to 75.85 to 87. The loft report is also sent to the host computer 105.

Other details are the same as those in FIG.

Effects of the Invention According to the ion implanter control system of the present invention, the group management man-machine controller of the group management computer and the plurality of system control controllers of each ion implanter control device can be transmitted in a single loop. Because the system is connected via a network, the group management man-machine controller can provide control conditions to all system control controllers.
Monitoring data sent from all system controllers can be received and displayed, and a group of ion implanters can be monitored and controlled from one location.

In addition, since the group management man-machine controller and the system control controller are connected via a loop-shaped transmission line, the number of group management transmission units is only one, which is smaller than the proposed example (possible).
Furthermore, since the group management man-machine controller and the system control controller are connected through a single transmission path, transmission time can be shortened.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing a first embodiment of this invention, FIG. 2 is a block diagram showing a second embodiment of this invention, and FIG. 3 is a block diagram showing a second embodiment of this invention.
Figure 4 shows the configuration of a conventional large current ion implanter and its control device, Figure 4 shows the configuration of a conventional medium current ion implanter and its control device, and Figure 5 shows the configuration of the ion implanter control system. FIG. 2 is a block diagram showing a proposed example. 61~63.73~75.85~87...System control controller, 65N67.77~79.89~91・
...Transmission unit for system control, 51-53...Control device for ion implantation apparatus, 102...Man-machine controller for group management, 103...Transmission unit for group management, 54...Group management computer, 104...Transmission line procedure amendment (viewed March 10, 1986)

Claims (1)

[Scope of Claim] A control system for an ion implanter that controls a group of ion implanters, the system controlling a plurality of systems for ion implantation in each ion implanter locally based on given control conditions. A group of system control controllers each having a plurality of system control controllers that perform the monitoring data distributed over multiple systems and respectively take in and output monitoring data of a plurality of systems, and a plurality of system control transmission sections each connected to the plurality of system control controllers. an ion implanter control device; and setting control conditions for the plurality of system control controllers of each of the ion implantation device control devices and applying the control conditions to the plurality of system control controllers of each of the ion implantation device control devices; a group management man-machine controller that captures and displays monitoring data output from the plurality of system control controllers of each of the ion implanter control devices; and a group management transmission connected to the group management man-machine controller. a transmission line connecting the plurality of system control transmission units of each of the ion implanter control devices and the group management transmission unit of the group management computer into a single loop; A control system for ion implantation equipment.