JPS62119942A - Formation of fine wiring and device thereof - Google Patents

Abstract

PURPOSE:To contrive the reduction in the working hours by a method wherein, in case a fine wiring is formed on a substrate by an additive process, the etching and inspection and correction are executed in the same vacuum exhaustion process. CONSTITUTION:A sample 12a having a base metal (thin metal film) 2 provided with an etching mask of a wiring conductor 3 plated selectively in the desired pattern is placed on a bed 13a, a high vacuum chamber 10 is evacuated and the bed is transferred to a position 13b by a control part 13. Ar gas is introduced 9, accelerated 18 by operating an ion gun 17, neutralized 19 at a moderate voltage and projected on the sample 12b as Ar molecules, and the sample is etched for the prescribed hour. The bed is returned to the position 13a, the wiring pattern 3 is collated with the standard information by a scanning type electron microscope and the results are stored 20b. In case there exists a defect, the bed is transferred to a position 13c. The storage 20b is read out and if the defect is a short-circuit, Ar gas is introduced 36, the shorted faulty place is etched away with an Ar molecular beam and if the defect is an open circuit, the an Ar molecular beam and the sputtered metal atoms are deposited on the faulty part through an aperture 37 to correct. Since the faulty parts are corrected in the same exhaustion process, the process is shortened.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an LSI package or an LSI manufacturing method and manufacturing apparatus, and particularly relates to the formation of fine wiring.

[Conventional technology]

In recent years, the thin film method, which is superior in miniaturization, has become mainstream for LSI/# packages and LSI wiring, and among these, the additive method, which has a small amount of undercut due to side etching and is easy to miniaturize, has become popular. It's starting to take over. In this additive method, a photosensitive resist or the like is used on a plating base metal thin film to obtain a plating film in the desired pattern, and then the unnecessary plating base metal thin film is etched. Conventional etching methods include anisotropic dry etching techniques such as ion beam etching and plasma etching.

[Problem that the invention seeks to solve]

In the wiring conductor pattern formation process using the conventional anisotropic dry etching described above, etching is carried out using a special etching device for etching the plated base metal thin film. In order to inspect the wiring conductor pattern, the substrate to be processed must be removed from the high vacuum chamber of this dedicated etching device. Furthermore, if a defect is found during inspection of the wiring conductor pattern, correction methods include cutting out unnecessary patterns using fine beam ion etching, or forming correction patterns in open areas of the pattern by ion beam deposition. This method is suitable for fine patterns, but in order to process these,
The substrate to be processed must be placed into the high vacuum chamber again, and after processing, the substrate must be taken out from the high vacuum chamber again.

Therefore, in this series of processes, high vacuum evacuation is required at least twice, and an electron beam, which can be expected to have higher accuracy than the mechanical stylus method, is also used to inspect wiring conductor patterns. If a conventional inspection method is adopted, one or two high vacuum evacuation processes will be added, which will add up to two to four times in addition to the process of cleaning the processed substrate that must be performed every time the high vacuum chamber is loaded. The drawback is that high vacuum evacuation requires a long time.

The present invention solves the above-mentioned problems by simplifying a series of steps into one.
The present invention provides a method and apparatus for forming fine wiring that can be performed in multiple high vacuum evacuation processes.

[Means for solving problems]

Among a series of steps for forming fine wiring on a substrate using an additive method, the present invention relates to a step of dry etching a plating base metal using a selectively plated wiring conductor in a desired pattern as an etching resist, and a step of dry etching the plating base metal using the selectively plated wiring conductor in a desired pattern as an etching resist. Using an electron beam to remove defects in the wiring conductor and flat turns completed by .

Based on the inspection process and the result of this inspection, the wiring conductor A? Among pattern defects, open defects are corrected by ion beam deposition, and short defects are corrected by removal using ion beam etching, both of which are performed in the same vacuum evacuation process. an etching mechanism for etching the entire surface or most of the area of a substrate to be processed; an inspection mechanism for inspecting a wiring conductor pattern formed on the substrate; Move X-
It has a Y table, an ion beam etching mechanism for correcting an open defect found in the wiring conductor or turn, and an ion deposition mechanism for correcting a short defect found in the mother turn of the wiring conductor. This fine wiring forming apparatus is characterized in that these devices are installed in the same high vacuum chamber.

〔Example〕

I'll explain the cold f--Great profit day 8's kidnapping II +/7s1゜i appendix 1.

FIG. 1 (a%(b)y(e)) is a vertical cross-sectional view showing an embodiment of the manufacturing method according to the present invention.

The substrate to be processed placed into the high vacuum chamber is shown in Figure 1 (a).
), the plating base metal thin film 2 formed on the surface
and a wiring conductor 3 formed into a desired pattern by electrolytic plating. In this embodiment, it is assumed that there is a wiring defect 4 in the wiring conductor due to a defect in the plating resist or electrolytic plating. When this processed substrate 1 is subjected to ion beam etching using argon gas, the plating base metal thin film 2 is removed and each conductor wiring pattern becomes independent as shown in FIG. 1(b). Next, with the argon gas exhausted, using a scanning electron microscope, the wiring conductor pattern 3 formed on the substrate 1 is examined using a standard wiring conductor/? Compare with turn data. In this embodiment, since the pattern that exists in the standard wiring conductor/main turn data is missing in the wiring defect part 4, there is information that an open pattern has occurred at this position on the board 1. is obtained. The position information of this pattern osin is stored in a separately provided storage device. Next, in the same high-vacuum chamber, the ion beam deposition mechanism is used as shown in Figure 1 (c) based on the previously stored pattern open position information.
), a wiring defect correction conductor is formed. Finally, in order to inspect whether the corrected wiring conductor pattern (turn) is normal, the wiring conductor pattern is inspected again using a scanning electron microscope, and then the substrate to be processed is taken out of the high vacuum chamber. Although a wiring defect is illustrated as a pattern open, if the defect is a pattern short, the unnecessary pattern can be etched using a fine beam ion etching mechanism instead of an ion beam deposition mechanism.

In addition, as a pattern inspection method, in addition to the /e-turn comparison method based on G-turn recognition using a scanning electron microscope, electric pulses are injected into the wiring conductor pattern using an electron gun, and the The inspection may be performed by comparing changes in the propagation waveform of the electric pulse with standard propagation waveform data. Further, the workpiece may be a silicon wafer for making an LSI chip in addition to a normal wiring board.

FIG. 2 is a sectional view showing an example of a device for carrying out the above-mentioned wiring method.

In FIG. 2, the high vacuum chamber 10 can be evacuated to high vacuum through the exhaust port 11, or can be brought to atmospheric pressure using a separately provided leak valve. The substrate 12a to be processed is introduced into the high vacuum chamber through a door (not shown) and held in a substrate holder provided on the XY table 13a-1.

The etching of the metal thin film under plating begins in chamber 1.
0 to a high vacuum, the X-Y table control section 139
Position 1 where the X-Y table 13a is indicated by the broken line
Move to 3b. At this time, the substrate to be processed is 12
Come to position b. In this state, the filament 15 of the ion gun 14 serving as an etching mechanism is heated, a voltage is applied between the filament 15 and the anode 16, and the valve 9 is opened to introduce a small amount of argon gas, whereby this gas is ionized. The argon ions are accelerated toward the substrate 12b to be processed by the electric field formed by the acceleration grid 18.

At this time, the argon ion flow is converged into a beam shape by the permanent magnet 17, and the argon ions are neutralized by the filament 19 to which an appropriate voltage is applied, and enter the surface of the substrate 12b to be processed in the state of argon molecules. Performs etching action. Detection of the end point of etching is
Although not shown in this figure, it is possible to perform the etching using a quadrupole mass spectrometer, or a method in which the etching time is determined based on an etching rate measured in advance may also be used. After etching is finished, the introduction of argon gas is stopped and the chamber is again placed in a high vacuum state.

After removing the plating base metal thin film by etching, it is returned to the position of the X-Y table 13a, and the wiring conductor pattern 3 is inspected using a scanning electron microscope. The scanning electron microscope inspection mechanism is an electron gun 20. Electron gun control 82
0a, standard wiring conductor) 4-turn data and inspection are performed in the following procedure. First, using the X-Y table 13a,
Rough positioning of the substrate to be inspected 12a is performed. This is to move the XY table so that the image of the alignment mark provided on the substrate to be inspected by the scanning electron microscope matches the reference alignment mark of the standard wiring conductor data. Then, the image of the wiring conductor pattern of the board to be inspected taken using a scanning electron microscope is compared with the standard wiring conductor data, and the position coordinates of the location where there is a difference and whether the defect mode is open or short are stored in the storage device. Remember.

If there is a defect in the wiring conductor pattern of the board inspected as described above, the X-Y table and the board are set at positions 13c and 12c, respectively, indicated by the dashed lines.

A short circuit in the wiring conductor pattern is corrected as follows.

The ion gun 30m as an ion beam etching mechanism uses an electric field formed between a filament 31 and an anode 320 to ionize argon gas introduced from a valve 36 into a permanent magnet 33 and a beam forming grid 3.
4, the beam is made into a fine beam, neutralized by a filament 35, and a fine beam of argon molecules is emitted, which is irradiated onto the surface of the substrate 12c. An aperture 37 is provided just before the substrate 12c.
However, the scattered beams are prevented from irradiating the substrate 12c, thereby improving processing accuracy.

The inspection result data is retrieved from the storage device, the X-Y table is moved so that the beam is irradiated onto the shorted area, and the shorted area is etched away using this beam.

Open wiring conductor mother turns are corrected as follows.

The ion gun as an ion depolev 3f mechanism moves to the position 30b, and the sputter target 39 (shown by a dotted line) K attached to the sputter target holder 38
By irradiating a beam of minute argon molecules,
Knocks out the metal atoms of the target. The ejected metal atoms form a beam-like trap, pass through the annoyarch 37, and are deposited on the open portions of the wiring conductor pattern on the board, forming a part of the wiring conductor pattern, thereby completing the correction.

Snow'l? The ivy target holder 38 has 2 to
A sputter target 39 of three types of metals is provided, and the metal to be sputtered can be selected by rotating. Furthermore, when the ion gun is located at a distance of 30 m, the structure is such that it does not interfere with the ion beam.

After the correction was completed, the board was moved to a position 12 meters away, and the wiring conductor pattern was inspected again using a scanning electron microscope.
Removed from high vacuum chamber.

〔Effect of the invention〕

As explained above, the present invention enables etching of the plating base metal thin film and wiring conductor in one vacuum evacuation process. By inspecting the turns and correcting the wiring conductor pattern, it is possible to significantly reduce the working time compared to performing each process using separate dedicated equipment.Furthermore, these series of processes can be performed in the same high vacuum state. Since the process is carried out indoors, there is less contamination by dirt and dust, which also has the effect of improving manufacturing quality.

[Brief explanation of drawings]

FIGS. 1(a) to (el are overhead sectional views showing the method of the present invention, and FIG. 2 is a longitudinal sectional view showing the manufacturing apparatus of the present invention. ■...Substrate, 2...Metal thin film , 3... wiring conductor,
4... Wiring defect portion, 5... Wiring defect correction conductor, 9,
36... Gas introduction valve, 10... High vacuum chamber, 11... Exhaust port, 12a*12bt12c
"" Substrate, 13a, 13b, 13c...X-Y table, 14, 30a, 30b = ion gun, 15, 21
, 31-... cathode filament, 16, 32...
・Anode, 17° 33...Permanent magnet, 18, 22,
23, 34... Grid, 19.35... Filament, 20... Electron gun, 24.25... Deflection electrode,
37...Anno(-cha), 38...Sputter target holder, 39...Sputter target.

Claims (2)

[Claims] (1) Among a series of steps for forming fine wiring on a substrate using an additive method, there is a step of dry etching the plating base metal using the selectively plated wiring conductor in the desired pattern as an etching resist, and this dry etching. A process of inspecting defects in the wiring conductor pattern completed by using an electron beam, and based on the results of this inspection, among the defects in the wiring conductor pattern, open defects are corrected by ion beam deposition, and short defects are corrected by ion beam deposition. A method for forming fine wiring, characterized in that a step of correcting a portion by removing it by ion beam etching is performed in the same vacuum evacuation step. (2) An etching mechanism that etches the entire surface or most of the area of the substrate to be processed, an inspection mechanism that inspects the wiring conductor pattern formed on the substrate, and an X-Y table that holds and moves the substrate. and an ion beam etching mechanism for correcting open defects found in the wiring conductor pattern, and an ion deposition mechanism for correcting short-circuit defects found in the wiring conductor pattern. A fine wiring forming device characterized by being installed in a vacuum chamber.