JPS62117330A - Washing method for semiconductor wafer - Google Patents
Washing method for semiconductor waferInfo
- Publication number
- JPS62117330A JPS62117330A JP25806485A JP25806485A JPS62117330A JP S62117330 A JPS62117330 A JP S62117330A JP 25806485 A JP25806485 A JP 25806485A JP 25806485 A JP25806485 A JP 25806485A JP S62117330 A JPS62117330 A JP S62117330A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- washing
- ozone
- tank
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 14
- 238000005406 washing Methods 0.000 title abstract 8
- 239000007788 liquid Substances 0.000 claims abstract description 18
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 15
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 56
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 abstract description 11
- 239000001301 oxygen Substances 0.000 abstract description 9
- -1 oxygen ions Chemical class 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 239000004809 Teflon Substances 0.000 abstract description 2
- 229920006362 Teflon® Polymers 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007865 diluting Methods 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 102100030704 Interleukin-21 Human genes 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 108010074108 interleukin-21 Proteins 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は半導体ウェハの洗浄方法、特に洗浄中に酸素を
供給する半導体ウェハの洗浄方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for cleaning semiconductor wafers, and more particularly to a method for cleaning semiconductor wafers in which oxygen is supplied during cleaning.
（ロ） 従来の技術
従来、半導体ウェハの洗浄方法としては第２図に示す如
く、洗浄槽重）内に硫酸（Ｈ２ＳＯ，）、アンモニア水
（Ｎ）（４０Ｈ）、塩酸（ＨＣＩ、弗酸（ＨＦ）等の１
０％以下の希釈液を洗浄液０３）として入れ、この洗浄
液（１３１をヒーター（１２＋で約８０℃程度に加熱し
、この液（１３内に半導体つΣ］・を浸漬して洗浄を行
っている。洗浄の活性化を行うために半導体ウェハの投
入直前に過酸化水素（Ｈ２Ｏ，）を洗浄液（１３１に滴
下して酸素を発生させて洗浄の均一化を図っている。(b) Conventional technology Conventionally, as shown in Figure 2, a semiconductor wafer cleaning method uses sulfuric acid (H2SO,), aqueous ammonia (N) (40H), hydrochloric acid (HCI, hydrofluoric acid) in a cleaning tank. 1 of HF) etc.
A diluted solution of 0% or less is put in as cleaning solution 03), this cleaning solution (131 is heated to about 80°C with a heater (12+), and this solution (semiconductor Σ) is immersed in 13 for cleaning. In order to activate the cleaning, hydrogen peroxide (H2O,) is dropped into the cleaning liquid (131) immediately before loading the semiconductor wafer to generate oxygen and to make the cleaning uniform.
斯る方法は例えば特開昭５９−４６０３２号公報（ＨＯ
ＩＬ２１／３０４）等で公知である。Such a method is described, for example, in Japanese Unexamined Patent Publication No. 59-46032 (HO
IL21/304) and the like are known.
ヒ→ 発明が解決しようとする問題点
しかしながら斯上の方法では種々の欠点が生じた。第１
に過酸化水素を用いるため熱分解されて水が発生し、洗
浄液Ｑ３ｉが更に希釈され洗浄にむらが生じて半導体ウ
ェハの表面均一性が悪い欠点があった。このため熱酸化
による酸化膜の欠陥密度が高くなったり、ポリシリコン
の洗浄では表面状態にむらが生じる。H → Problems to be solved by the invention However, various drawbacks arose in the above method. 1st
Since hydrogen peroxide is used in this method, it is thermally decomposed and water is generated, and the cleaning liquid Q3i is further diluted, resulting in uneven cleaning, resulting in poor surface uniformity of the semiconductor wafer. For this reason, the defect density of the oxide film due to thermal oxidation becomes high, and the surface condition becomes uneven when cleaning polysilicon.
第２に過酸化水素を用いるためその液内に含まれるゴミ
で洗浄液（１３）が汚れ、クリーンな洗浄を行なえない
欠点があった。Second, since hydrogen peroxide is used, the cleaning liquid (13) is contaminated with dirt contained in the liquid, making it impossible to perform clean cleaning.
第３に洗浄液αＪの温度を上昇して洗浄効率を上げよう
と１−ると過酸化水素の熱分解が速められてかえって洗
浄効果が落ちる欠点かあった。Third, in an attempt to increase the cleaning efficiency by increasing the temperature of the cleaning liquid αJ, the thermal decomposition of hydrogen peroxide is accelerated, which may actually reduce the cleaning effect.
（−４問題点を解決イーるための手段
本発明は斯上した欠点に鑑みてなされ、洗浄液中和オゾ
ンを供給することりこより従来の欠点を大巾に改善した
半導体ウェハの洗浄方法を提供するものである。(-4 Means for Solving the Problems) The present invention has been made in view of the above-mentioned drawbacks, and provides a semiconductor wafer cleaning method that greatly improves the conventional drawbacks by supplying a cleaning solution with neutralized ozone. It is something to do.
（ホ） 作用
本発明に依れば、洗浄時間中洗浄液（４１中にオゾンガ
スな注入しているので、酸素な一定量供給でき洗浄液（
４）の希釈化も防止できる。(e) Function According to the present invention, since ozone gas is injected into the cleaning liquid (41) during the cleaning time, a constant amount of oxygen can be supplied.
4) dilution can also be prevented.
（へ）実施例
本発明に依る半導体ウェハの洗浄方法を第１図を参照し
て詳述する。(f) Example A method for cleaning semiconductor wafers according to the present invention will be described in detail with reference to FIG.
洗浄槽（１１内に９０〜９６％の濃硫酸原液（Ｈ２Ｓ０
４）、アンモニア水（ＮＨ，ＯＨ） 、塩酸（ＨＣｌ）
。Cleaning tank (11 contains 90-96% concentrated sulfuric acid stock solution (H2S0)
4), ammonia water (NH,OH), hydrochloric acid (HCl)
.
硝酸（ＨＮＯ３）、弗酸（ＨＦ）等の１０％以下の希釈
液を洗浄液（４）として入れ、この洗浄槽（１）下に多
孔を有する石英又はテフロンより成るパイプ（２）を設
けてオゾン（０３）が下から吹き出す様になっている。A diluted solution of 10% or less such as nitric acid (HNO3) or hydrofluoric acid (HF) is put in as a cleaning solution (4), and a pipe (2) made of porous quartz or Teflon is installed below this cleaning tank (1) to remove ozone. (03) appears to be blowing out from below.
洗浄槽（１）の下にはヒーター（３）を設け、洗浄液（
４）を加熱する。硫酸の場合は１００〜１４０℃に加熱
し、アンモニア水の場合は８０〜１００℃に加熱してい
る。A heater (3) is provided below the cleaning tank (1), and the cleaning liquid (
4) Heat. In the case of sulfuric acid, it is heated to 100 to 140°C, and in the case of aqueous ammonia, it is heated to 80 to 100°C.
斯る洗浄槽（１）内に治具に収納した半導体ウェハを浸
漬し、パイプ（２）よりオゾンを注入して酸素イオンを
洗浄液（４）内に供給しながら半導体ウェハの洗浄を行
う。A semiconductor wafer housed in a jig is immersed in the cleaning tank (1), and ozone is injected through the pipe (2) to supply oxygen ions into the cleaning liquid (4) while cleaning the semiconductor wafer.
斯る方法に依れば、オゾンが気体であるので洗浄液（４
）の希釈化を伴なわずに酸素滲イオンを供給し続ける。According to this method, since ozone is a gas, the cleaning liquid (4
) continues to supply oxygen ions without dilution.
これにより洗浄表面の酸化を促進して親水処理を行なえ
るので極めてクリーンな洗浄を安定して行なうことがで
きる。As a result, oxidation of the cleaning surface can be promoted and hydrophilic treatment can be performed, so that extremely clean cleaning can be stably performed.
第３図に本発明と従来の洗浄方法の洗浄効果を説明する
特性図を示す。従来ＲＣＡ洗浄法と呼ばれているＮＨ，
ＯＨ＋Ｈ２０ｔと本発明のＮＨ，ＯＨ＋０３とを比較す
ると、従来では加熱温度がＨ，Ｏ，の熱分解より８０〜
９０℃に限られ、 ＨｔＯ７→Ｈ，Ｏ＋Ｏ↑の熱分解に
より発生する水により液希釈が生じて矢印の様に洗浄効
果が劣化しているのに対し、本発明ではオゾンを用いる
ため１００℃以上に加熱でき洗浄効果を大巾に向上でき
る。また従来のＨ，Ｓｏ、 十Ｈ，０２と本発明のＨｔ
Ｓ ０４ 十〇ｓ についても同様の効果が得られ
る。FIG. 3 shows a characteristic diagram illustrating the cleaning effects of the present invention and the conventional cleaning method. NH, which is conventionally called RCA cleaning method,
Comparing OH+H20t and NH,OH+03 of the present invention, the conventional heating temperature is 80 to 80% lower than the thermal decomposition of H, O,
The cleaning effect is limited to 90℃, and the water generated by the thermal decomposition of HtO7→H, O+O↑ causes liquid dilution and deteriorates the cleaning effect as shown by the arrow.However, in the present invention, ozone is used, so the cleaning effect is deteriorated at 100℃ or higher. The cleaning effect can be greatly improved. In addition, the conventional H, So, 10H, 02 and the present invention's Ht
A similar effect can be obtained for S 04 10s.
（ト）発明の効果
本発明に依れば、第１にオゾンを酸素イオン発生源とし
て用いるので洗浄液（４）が希釈化されず、酸素イオン
で洗浄が活性化され半導体ウエノ１の表面を均一に且つ
安定して洗浄できる利点を有する。(G) Effects of the Invention According to the present invention, firstly, since ozone is used as an oxygen ion generation source, the cleaning liquid (4) is not diluted, and the cleaning is activated by oxygen ions, so that the surface of the semiconductor wafer 1 is uniformly cleaned. It has the advantage of being able to be cleaned easily and stably.
第２にオゾンは気体であるので注入しても洗浄液（４）
がゴミ等で汚染されるおそれがなくなり、クリーンな洗
浄ができる利点を有する。Second, since ozone is a gas, even if it is injected into the cleaning solution (4)
This has the advantage that there is no risk of contamination with dirt, etc., and clean cleaning can be performed.
゛ 第３にオゾンを用いるので洗浄液（４）の温度なＨ
７Ｏ２の熱分解に無関係に上げても酸素イオンを一定量
供給でき、洗浄効果を従来の２倍以上に向上できる利点
を有する。゛ Thirdly, since ozone is used, the temperature of the cleaning solution (4)
It has the advantage that a constant amount of oxygen ions can be supplied even if the temperature is increased regardless of the thermal decomposition of 7O2, and the cleaning effect can be more than doubled compared to the conventional method.
第４にオゾンを用いるのでＩＩ 、 Ｏ’、を用いる場
合に比べてＨ２Ｏ２の液の管理が不要となり安全上の管
理が容易となる利点を有する。Fourthly, since ozone is used, there is an advantage that there is no need to manage the H2O2 liquid and safety management is easier compared to the case where II, O' is used.
第１図は本発明に依る半導体ウエノ・の洗浄方法を説明
する断面図、第２図は従来の半導体ウエノ・の洗浄方法
を説明する断面図、第３図は本発明と従来の洗浄効果を
説明する曲線図である。
（１）は洗浄槽、（２）はパイプ、（３）はヒーター％
（４）は洗浄液である。Fig. 1 is a sectional view illustrating a method for cleaning semiconductor wafers according to the present invention, Fig. 2 is a sectional view illustrating a conventional method for cleaning semiconductor wafers, and Fig. 3 shows the cleaning effects of the present invention and the conventional method. It is a curve diagram for explaining. (1) is the cleaning tank, (2) is the pipe, (3) is the heater%
(4) is a cleaning liquid.
Claims (1)
導体ウェハを浸漬した後、前記洗浄液中にオゾンを供給
することを特徴とする半導体ウェハの洗浄方法。(1) A method for cleaning a semiconductor wafer, which comprises immersing the semiconductor wafer in a cleaning liquid made of ammonia, sulfuric acid, hydrochloric acid, etc., and then supplying ozone into the cleaning liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25806485A JPS62117330A (en) | 1985-11-18 | 1985-11-18 | Washing method for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25806485A JPS62117330A (en) | 1985-11-18 | 1985-11-18 | Washing method for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62117330A true JPS62117330A (en) | 1987-05-28 |
Family
ID=17315025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25806485A Pending JPS62117330A (en) | 1985-11-18 | 1985-11-18 | Washing method for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62117330A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0199221A (en) * | 1987-10-12 | 1989-04-18 | Nec Corp | Cleaning method for semiconductor substrate |
| JPH01132126A (en) * | 1987-08-28 | 1989-05-24 | Arrowhead Ind Water Inc | Manufacture of integrated circuit |
| JPH04222677A (en) * | 1990-12-21 | 1992-08-12 | Tec:Kk | washing machine |
| WO1998050947A1 (en) * | 1997-05-09 | 1998-11-12 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6701941B1 (en) | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7264680B2 (en) | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US7378355B2 (en) | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
-
1985
- 1985-11-18 JP JP25806485A patent/JPS62117330A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01132126A (en) * | 1987-08-28 | 1989-05-24 | Arrowhead Ind Water Inc | Manufacture of integrated circuit |
| JPH0199221A (en) * | 1987-10-12 | 1989-04-18 | Nec Corp | Cleaning method for semiconductor substrate |
| JPH04222677A (en) * | 1990-12-21 | 1992-08-12 | Tec:Kk | washing machine |
| WO1998050947A1 (en) * | 1997-05-09 | 1998-11-12 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6701941B1 (en) | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US6830628B2 (en) | 1997-05-09 | 2004-12-14 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6843857B2 (en) | 1997-05-09 | 2005-01-18 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7264680B2 (en) | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US7378355B2 (en) | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
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